45nm SOI技术的总剂量辐射响应

2010 IEEE International SOI Conference (SOI) Pub Date : 2010-11-18 DOI:10.1109/SOI.2010.5641052

S. T. Liu, A. Hurst, H. Hughes, P. McMarr, J. Benedito, C. Capasso

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引用次数: 12

摘要

基于Co-60辐射源的TID评价，我们得出了核心45nm SOI技术的栅极氧化物和埋地氧化物都是稳健的。研究核心器件和输入输出器件边缘效应的辐射特性是完整评估45nm SOI技术的必要条件。这将在未来完成。

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Total dose radiation response of a 45nm SOI Technology

Based on the TID evaluation using Co-60 radiation source, we conclude that both gate oxide and the buried oxide of core 45nm SOI technology are robust. Investigation of radiation properties of the edge effect of the core devices and the input-output devices are necessary to have a complete assessment of the 45nm SOI technology. This will be done in the future.

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2010 IEEE International SOI Conference (SOI)

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