部分耗尽SOI器件的总电离剂量辐射响应

2010 IEEE International SOI Conference (SOI) Pub Date : 2010-11-18 DOI:10.1109/SOI.2010.5641057

N. Rezzak, E. Zhang, M. Alles, peixiong zhao, H. Hughes

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引用次数: 14

摘要

在sub- 100nm部分耗尽的SOI器件中，如果掺杂达到STI的侧壁和后通道，则会降低对tid引起的泄漏的敏感性。在45 nm NMOS SOI上测量到的TID响应与模拟中观察到的趋势一致。

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Total-ionizing-dose radiation response of partially-depleted SOI devices

The high body doping inherent in sub-100 nm partially-depleted SOI devices tends to mitigate the sensitivity to TID-induced leakage, providing that the doping reaches the STI sidewalls and back channel. Measured TID response on 45 nm NMOS SOI is consistent with trends observed in simulations.

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来源期刊

2010 IEEE International SOI Conference (SOI)

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