2010 IEEE International SOI Conference (SOI)最新文献_第2页

Characterization of novel TiN/HfO2 metal insulator semiconductor stack for 32nm eDRAM 新型32纳米eDRAM TiN/HfO2金属绝缘体半导体层的表征

2010 IEEE International SOI Conference (SOI) Pub Date : 2010-11-18 DOI: 10.1109/SOI.2010.5641378

P. Goyal, S. Gupta, R. Krishnan, W. Davies, H. Ho, A. Tessier, A. Arya, S. Deshpande, S. Fang, S. Lee, Z. Li, J. Liu, R. Takalkar, J. Dadson, A. Chakravarti, A. Domenicucci, J. Shepard, K. McStay, B. Morgenfeld, S. Allen, X. Li, B. Khan, R. Knarr, R. Arndt, R. Venigalla, P. Parries, M. Chudzik, S. Stiffler

引用次数: 2

FDSOI metal gate transistors for ultra low power subthreshold operation 用于超低功耗亚阈值工作的FDSOI金属栅极晶体管

2010 IEEE International SOI Conference (SOI) Pub Date : 2010-11-18 DOI: 10.1109/SOI.2010.5641399

S. Vitale, J. Kedzierski, P. Wyatt, M. Renzi, C. Keast

引用次数: 2

Numerically controlled sacrificial plasma oxidation using array of electrodes for improving thickness uniformity of SOI 用电极阵列数控牺牲等离子体氧化改善SOI厚度均匀性

2010 IEEE International SOI Conference (SOI) Pub Date : 2010-11-18 DOI: 10.1109/SOI.2010.5641395

Y. Sano, S. Kamisaka, K. Yoshinaga, H. Mimura, S. Matsuyama, K. Yamauchi

引用次数: 2

Impact of back-gate biasing on ultra-thin silicon-on-insulator-based nanoribbon sensors 后门偏置对超薄绝缘体上硅基纳米带传感器的影响

2010 IEEE International SOI Conference (SOI) Pub Date : 2010-11-18 DOI: 10.1109/SOI.2010.5641066

P. Fernandes, R. Chapman, O. Seitz, H. Stiegler, H. Wen, Y. Chabal, E. Vogel

引用次数: 1

Performance characterization of PD-SOI ring oscillators at cryogenic temperatures 低温下PD-SOI环形振荡器的性能表征

2010 IEEE International SOI Conference (SOI) Pub Date : 2010-11-18 DOI: 10.1109/SOI.2010.5641394

Igor V. Vernik, T. Ohki, M. Ketchen, M. Bhushan

引用次数: 6

Finishing of silicon film for silicon-on-glass 玻璃上硅用硅膜的整理

2010 IEEE International SOI Conference (SOI) Pub Date : 2010-11-18 DOI: 10.1109/SOI.2010.5641053

A. Usenko

引用次数: 0

Comparing Single Event Upset sensitivity of bulk vs. SOI based FinFET SRAM cells using TCAD simulations 使用TCAD模拟比较体型和SOI型FinFET SRAM单元的单事件干扰灵敏度

2010 IEEE International SOI Conference (SOI) Pub Date : 2010-11-18 DOI: 10.1109/SOI.2010.5641058

D. Ball, M. Alles, peixiong zhao, S. Cristoloveanu

引用次数: 40

Self-heating effect and characteristic variability of gate-all-around silicon nanowire transistors for highly-scaled CMOS technology (invited) 用于大规模CMOS技术的栅极全硅纳米线晶体管的自热效应和特性变异性(特邀)

2010 IEEE International SOI Conference (SOI) Pub Date : 2010-11-18 DOI: 10.1109/SOI.2010.5641472

R. Huang, R. Wang, J. Zhuge, T. Yu, Y. Ai, C. Fan, S. Pu, J. Zou, Y.Y. Wang

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引用次数: 4

Engineering a solution to jupiter exploration 设计木星探测的解决方案

2010 IEEE International SOI Conference (SOI) Pub Date : 2010-11-18 DOI: 10.1109/SOI.2010.5641049

K. Clark, T. Magner, M. Lisano, R. Pappalardo

{"title":"Engineering a solution to jupiter exploration","authors":"K. Clark, T. Magner, M. Lisano, R. Pappalardo","doi":"10.1109/SOI.2010.5641049","DOIUrl":"https://doi.org/10.1109/SOI.2010.5641049","url":null,"abstract":"The challenge associated with operating a spacecraft for long periods within the radiation belts of Jupiter is significant. The promise of incredible science is well worth the risk though, when the risk is identified and controlled. To be managed within reasonable resource limits, a system level engineering approach is needed to balance available resources, bolstering the weakest areas and adjusting the design as a whole for best results, rather than focusing on local concerns. It is important to establish these design methodologies early in conceptual development, and carry them forward in a committed, disciplined manner through development and operation. Early risk assessment and mitigation activities are also essential to controlling cost and risk. The JEO team has been pro-active in deploying a comprehensive risk mitigation plan, now in its second year, to retire most radiation risks prior to the Phase A development. The JPL/APL team has capitalized on prior deep space experience, significantly leveraging this technical expertise. Experience gained from Juno and RBSP would aid the proposed JEO mission during Phase A/B development; and the Galileo orbiter, in particular, has provided both a wealth of radiation data and an invaluable demonstration, well beyond anyone's expectations, of the practicability of operating a scientific spacecraft in the most intense regions of Jupiter's radiations belts.","PeriodicalId":227302,"journal":{"name":"2010 IEEE International SOI Conference (SOI)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-11-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129259676","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Evaluation of static noise margin and performance of 6T FinFET SRAM cells with asymmetric gate to source/drain underlap devices 非对称栅极-源极/漏极underlap器件的6T FinFET SRAM单元的静态噪声裕度和性能评估

2010 IEEE International SOI Conference (SOI) Pub Date : 2010-11-18 DOI: 10.1109/SOI.2010.5641392

V. Hu, M. Fan, P. Su, C. Chuang

引用次数: 10