{"title":"Finishing of silicon film for silicon-on-glass","authors":"A. Usenko","doi":"10.1109/SOI.2010.5641053","DOIUrl":null,"url":null,"abstract":"Surface smoothing and removal of the damaged portion of as-transferred single crystalline silicon films is described. The process includes sacrificial plasma oxidation and wet stripping of the oxide. Typically, the topmost 20 nm of silicon film is removed in one cycle. Rougness of the film surface significantly improves upon the plasma/strip cycle. The process can be used for either SOI or silicon-on-glass (SiOG) finishing. As conventional CMP is not feasible for SiOG finishing, the described process has a unique advantage for finishing SiOG.","PeriodicalId":227302,"journal":{"name":"2010 IEEE International SOI Conference (SOI)","volume":"22 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2010-11-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2010 IEEE International SOI Conference (SOI)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SOI.2010.5641053","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
Surface smoothing and removal of the damaged portion of as-transferred single crystalline silicon films is described. The process includes sacrificial plasma oxidation and wet stripping of the oxide. Typically, the topmost 20 nm of silicon film is removed in one cycle. Rougness of the film surface significantly improves upon the plasma/strip cycle. The process can be used for either SOI or silicon-on-glass (SiOG) finishing. As conventional CMP is not feasible for SiOG finishing, the described process has a unique advantage for finishing SiOG.