Finishing of silicon film for silicon-on-glass

A. Usenko
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Abstract

Surface smoothing and removal of the damaged portion of as-transferred single crystalline silicon films is described. The process includes sacrificial plasma oxidation and wet stripping of the oxide. Typically, the topmost 20 nm of silicon film is removed in one cycle. Rougness of the film surface significantly improves upon the plasma/strip cycle. The process can be used for either SOI or silicon-on-glass (SiOG) finishing. As conventional CMP is not feasible for SiOG finishing, the described process has a unique advantage for finishing SiOG.
玻璃上硅用硅膜的整理
描述了转移态单晶硅薄膜的表面平滑和损坏部分的去除。该工艺包括牺牲等离子体氧化和湿法剥离氧化物。通常,在一个周期内去除最顶层20nm的硅膜。在等离子体/带材循环过程中,薄膜表面粗糙度显著提高。该工艺可用于SOI或硅-玻璃(SiOG)精加工。由于传统的CMP工艺无法对SiOG进行精加工,因此所述工艺对SiOG精加工具有独特的优势。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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