Comparing Single Event Upset sensitivity of bulk vs. SOI based FinFET SRAM cells using TCAD simulations

Abstract

The bulk and SOI FinFET SRAMs cells have comparable critical charges; however, the bulk cell has a lower upset LET threshold as well as larger sensitive cross section than the SOI cell. This implies a higher single event error rate in the bulk-based compared to SOI-based FinFET technologies.