使用TCAD模拟比较体型和SOI型FinFET SRAM单元的单事件干扰灵敏度

2010 IEEE International SOI Conference (SOI) Pub Date : 2010-11-18 DOI:10.1109/SOI.2010.5641058

D. Ball, M. Alles, peixiong zhao, S. Cristoloveanu

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引用次数: 40

摘要

体积和SOI FinFET sram电池具有相当的临界电荷;然而，与SOI电池相比，本体电池具有更低的扰动LET阈值以及更大的敏感截面。这意味着与基于soi的FinFET技术相比，基于块体的FinFET技术的单事件错误率更高。

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Comparing Single Event Upset sensitivity of bulk vs. SOI based FinFET SRAM cells using TCAD simulations

The bulk and SOI FinFET SRAMs cells have comparable critical charges; however, the bulk cell has a lower upset LET threshold as well as larger sensitive cross section than the SOI cell. This implies a higher single event error rate in the bulk-based compared to SOI-based FinFET technologies.

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2010 IEEE International SOI Conference (SOI)

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