用电极阵列数控牺牲等离子体氧化改善SOI厚度均匀性

2010 IEEE International SOI Conference (SOI) Pub Date : 2010-11-18 DOI:10.1109/SOI.2010.5641395

Y. Sano, S. Kamisaka, K. Yoshinaga, H. Mimura, S. Matsuyama, K. Yamauchi

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引用次数: 2

摘要

一个电极阵列覆盖了一个8″晶圆面积的六分之一，开发了一个NC牺牲等离子体氧化的原型系统。结果表明，通过对各电极等离子体导通时间的单独控制，该系统可用于同步数控加工。

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Numerically controlled sacrificial plasma oxidation using array of electrodes for improving thickness uniformity of SOI

An array of electrodes covering one-sixth of the area of an 8″ wafer was developed as a prototype system for NC sacrificial plasma oxidation. It was demonstrated that the system can be used for simultaneous NC processes by the individual control of the plasma-on time of each electrode.

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2010 IEEE International SOI Conference (SOI)

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