后门偏置对超薄绝缘体上硅基纳米带传感器的影响

2010 IEEE International SOI Conference (SOI) Pub Date : 2010-11-18 DOI:10.1109/SOI.2010.5641066

P. Fernandes, R. Chapman, O. Seitz, H. Stiegler, H. Wen, Y. Chabal, E. Vogel

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引用次数: 1

摘要

在这项研究中，我们证明了与基于soi的背门传感器接触的电解质与应用的后门偏置是复杂耦合的。因此，液体电压调制顶部通道，控制器件的工作点。这种双门控行为对纳米带和纳米线传感器的性能都有很大的影响。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Impact of back-gate biasing on ultra-thin silicon-on-insulator-based nanoribbon sensors

In this study, we demonstrated that electrolytes in contact with SOI-based back-gated sensors are complexely coupled to applied back gate biases. Because to this, the liquid voltage modulates the top channel and controls the operating point of the device. This dual gating behavior has strong implications on the performance of both nanoribbon and nanowire sensors.

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2010 IEEE International SOI Conference (SOI)

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