Self-heating effect and characteristic variability of gate-all-around silicon nanowire transistors for highly-scaled CMOS technology (invited)

Abstract

This paper discusses self-heating effect and variability behavior of GAA SNWTs. Due to the 1-D nature of nanowire and increased phononboundary scattering in GAA structure, the selfheating effect in SNWTs based on bulk substrate is comparable or even a little bit worse than SOI devices, which may limit the ultimate performance of SNWT-based circuits and thus special design consideration is expected. On the other hand, random variation has become a practical problem at nano-scale. The characteristic variability of SNWTs is experimentally extracted and studied in detail. And the impacts of nanowire LER, the diameter-dependent annealing enhanced nanowire This paper discusses self-heating effect and variability behavior of GAA SNWTs. Due to the 1-D nature of nanowire and increased phononboundary scattering in GAA structure, the selfheating effect in SNWTs based on bulk substrate is comparable or even a little bit worse than SOI devices, which may limit the ultimate performance of SNWT-based circuits and thus special design consideration is expected. On the other hand, random variation has become a practical problem at nano-scale. The characteristic variability of SNWTs is experimentally extracted and studied in detail. And the impacts of nanowire LER, the diameter-dependent annealing enhanced nanowire