H. Sakai, S. O'Uchi, T. Matsukawa, K. Endo, Y. Liu, T. Tsukada, Y. Ishikawa, T. Nakagawa, T. Sekigawa, H. Koike, K. Sakamoto, M. Masahara, H. Ishikuro
{"title":"High-frequency characterization of intrinsic FinFET channel","authors":"H. Sakai, S. O'Uchi, T. Matsukawa, K. Endo, Y. Liu, T. Tsukada, Y. Ishikawa, T. Nakagawa, T. Sekigawa, H. Koike, K. Sakamoto, M. Masahara, H. Ishikuro","doi":"10.1109/SOI.2010.5641064","DOIUrl":null,"url":null,"abstract":"The extraction method of the high-frequency characteristics of the intrinsic part of FinFET was experimentally demonstrated. By using an open, short, and through pattern optimized for FinFET process, the parasitic components of the source, drain and gate area were successfully deembedded. Using the proposed method, the fT of the FinFET with Lg=120nm, Tox=2nm, and TFin=50nm was estimated to be 85GHz which coincided with the simulated results by the device model.","PeriodicalId":227302,"journal":{"name":"2010 IEEE International SOI Conference (SOI)","volume":"158 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2010-11-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"3","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2010 IEEE International SOI Conference (SOI)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SOI.2010.5641064","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 3
Abstract
The extraction method of the high-frequency characteristics of the intrinsic part of FinFET was experimentally demonstrated. By using an open, short, and through pattern optimized for FinFET process, the parasitic components of the source, drain and gate area were successfully deembedded. Using the proposed method, the fT of the FinFET with Lg=120nm, Tox=2nm, and TFin=50nm was estimated to be 85GHz which coincided with the simulated results by the device model.