n型肖特基势垒mosfet的非线性分析

2010 IEEE International SOI Conference (SOI) Pub Date : 2010-11-18 DOI:10.1109/SOI.2010.5641391

J. Tinoco, C. Urban, M. Emam, S. Mantl, Q. Zhao, J. Raskin

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引用次数: 0

摘要

在过去的几年中，人们为改善MOS晶体管的直流和射频性能做出了许多努力。在这个范围内，肖特基势垒晶体管作为传统器件的非常有趣的替代品出现。本文研究了沟道长度为180nm的掺杂偏析n型sb - mosfet的非线性特性。

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Non-linear analysis of n-type Schottky-Barrier MOSFETs

In the last few years, many efforts have been made looking for the improvement of the DC and RF performance of MOS transistors. In this scope, Schottky-Barrier transistors appear as very interesting alternative to conventional devices. In this paper we present the non-linear behavior of dopant segregated n-type SB-MOSFETs with 180 nm channel length.

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2010 IEEE International SOI Conference (SOI)

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