Materials Science in Semiconductor Processing最新文献_第7页

Boosted photoelectrochemical water splitting activity by construction of a novel FeVO4/AgVO3 p-n heterostructure 通过构建新型FeVO4/AgVO3 p-n异质结构提高光电化学水分解活性

IF 4.6 3区工程技术

Materials Science in Semiconductor Processing Pub Date : 2025-09-15 DOI: 10.1016/j.mssp.2025.110023

Hong Tian , Yumin Li , Qingping Dai , Shunlang Wei , Bing Lv , Jun Wei , Yupei Qiao

{"title":"Boosted photoelectrochemical water splitting activity by construction of a novel FeVO4/AgVO3 p-n heterostructure","authors":"Hong Tian , Yumin Li , Qingping Dai , Shunlang Wei , Bing Lv , Jun Wei , Yupei Qiao","doi":"10.1016/j.mssp.2025.110023","DOIUrl":"10.1016/j.mssp.2025.110023","url":null,"abstract":"<div><div>FeVO<sub>4</sub> is recognized as a potential photoelectrode material on account of its relatively narrow bandgap and suitable conduction and valence band positions. However, its photoelectrochemical water splitting performance remains unsatisfactory owing to rapid carrier recombination and poor charge transport capabilities. Herein, a novel p-n FeVO<sub>4</sub>/AgVO<sub>3</sub> heterostructure photoanode was developed by depositing p-type AgVO<sub>3</sub> nanowires onto n-type FeVO<sub>4</sub> nanoporous structures, boosting the PEC properties of the base material. The incorporated AgVO<sub>3</sub> nanostructures enhance light absorption in the visible spectrum, facilitate effective electron-hole separation through optimized interfacial charge transport pathways, and simultaneously extend the carrier lifetime. The built-in electric field in the p-n heterostructure promotes more effective separation and directional motion of photoinduced charge carriers. As a result, the transient photocurrent density of the FeVO<sub>4</sub>/AgVO<sub>3</sub> heterojunction photoanode reaches 0.22 mA cm<sup>−2</sup>, which is 3.35 times that of bare FeVO<sub>4</sub> (0.06 mA cm<sup>−2</sup>). Notably, the incorporation of AgVO<sub>3</sub> nanowires significantly improves the photostability of the FeVO<sub>4</sub> photoanode. This work provides a feasible strategy from the perspective of interface engineering for designing high-performance FeVO<sub>4</sub>-based photoelectrodes to enhance photoconversion efficiency.</div></div>","PeriodicalId":18240,"journal":{"name":"Materials Science in Semiconductor Processing","volume":"201 ","pages":"Article 110023"},"PeriodicalIF":4.6,"publicationDate":"2025-09-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145060291","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Thermal-moisture interaction effects on delamination reliability of advanced fan-out packages 热-湿相互作用对先进扇出封装分层可靠性的影响

IF 4.6 3区工程技术

Materials Science in Semiconductor Processing Pub Date : 2025-09-15 DOI: 10.1016/j.mssp.2025.110037

Meng-Kai Shih , Yi-Hao Chen , Bo-Rui Ding , Chin-Ju Hsieh , I-Hung Lin , Tom Ni

{"title":"Thermal-moisture interaction effects on delamination reliability of advanced fan-out packages","authors":"Meng-Kai Shih , Yi-Hao Chen , Bo-Rui Ding , Chin-Ju Hsieh , I-Hung Lin , Tom Ni","doi":"10.1016/j.mssp.2025.110037","DOIUrl":"10.1016/j.mssp.2025.110037","url":null,"abstract":"<div><div>—Fan-out (FO) packages are critical for achieving high I/O density and miniaturization in advanced electronic products. However, their complex material interfaces and exposure to harsh hygrothermal conditions pose significant reliability concerns, particularly interfacial delamination. Accordingly, this study experimentally evaluated the interfacial adhesion at the polyimide (PI)/copper interface of a typical FO package following moisture exposure, using double cantilever beam (DCB) tests to determine the critical strain energy release rate GC. In addition, a comprehensive three-dimensional finite element (FE) model accounting for the effects of moisture diffusion, thermal loading, and mechanical stress was developed to simulate the hygrothermal behavior of the package. The model was validated by comparing the simulated results for the package warpage with the experimental measurements. The virtual crack closure technique (VCCT) was then applied to further analyze the delamination behavior of the FO package at the critical interfaces under combined hygrothermal loading. Finally, the Taguchi method was employed to evaluate the effects of the key structural design parameters of the FO package, such as the PI thickness and epoxy molding compound (EMC) material, on the strain energy release rate (GI) and to identify the optimal package configuration. The results showed that increasing the PI thickness and using an EMC with a compatible coefficient of thermal expansion significantly reduced GI and thus mitigated the risk of delamination. The findings presented in this study offer practical design guidance for enhancing the mechanical reliability of FO packages in humid and thermally demanding environments.</div></div>","PeriodicalId":18240,"journal":{"name":"Materials Science in Semiconductor Processing","volume":"201 ","pages":"Article 110037"},"PeriodicalIF":4.6,"publicationDate":"2025-09-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145060293","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Dual-stage temporal laser stealth dicing of silicon carbide wafers with continuous crack propagation 具有连续裂纹扩展的碳化硅晶圆双级瞬态激光隐形切割

IF 4.6 3区工程技术

Materials Science in Semiconductor Processing Pub Date : 2025-09-15 DOI: 10.1016/j.mssp.2025.110067

Jie Li , Bo Liu , Yi Zhang

{"title":"Dual-stage temporal laser stealth dicing of silicon carbide wafers with continuous crack propagation","authors":"Jie Li , Bo Liu , Yi Zhang","doi":"10.1016/j.mssp.2025.110067","DOIUrl":"10.1016/j.mssp.2025.110067","url":null,"abstract":"<div><div>To address the difficulty of simultaneously regulating surface chipping damage and surface heat accumulation damage in laser stealth cutting (LSD) of silicon carbide (SiC) wafers, a novel dual-stage temporal laser stealth dicing (DLSD) method is proposed in this work. This method employs a two-stage laser process: first, a low-power modifying laser generates pre-modified SiC layers, followed by a high-power-inducing laser that promotes continuous crack propagation. Compared with traditional LSD methods, the DLSD method can achieve continuous propagation of induced cracks, thereby reducing surface chipping damage, without causing thermal accumulation damage on the surface, further improving wafer cutting quality. The mechanism of continuous crack propagation induced by the DLSD method is analyzed in detail. The pre-modified layer of amorphous SiC generated by the modifying laser enhances the absorption of the inducing laser, resulting in an increase in the length of the modified layer and promoting continuous crack propagation. The influence of inducing laser power and scanning speed on cutting quality is also thoroughly investigated. Results show that increasing the inducing laser power and scanning speed improves the length of the modified layer and induces continuous crack propagation. Specifically, when the modified laser power is 0.14 W, the induced laser power is 0.18 W, and the scanning speed is 800 mm/s, the maximum chipping width and sidewall surface roughness reach their minimum values of 6.0 μm and 1.15 μm, respectively.</div></div>","PeriodicalId":18240,"journal":{"name":"Materials Science in Semiconductor Processing","volume":"201 ","pages":"Article 110067"},"PeriodicalIF":4.6,"publicationDate":"2025-09-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145060294","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Numerical and experimental investigation of CdTe crystal growth assisted by a thermal–shielding ring for stable interface control 热屏蔽环辅助CdTe晶体生长的数值与实验研究

IF 4.6 3区工程技术

Materials Science in Semiconductor Processing Pub Date : 2025-09-14 DOI: 10.1016/j.mssp.2025.110059

Zhicheng Zhu , Youbao Ni , Xuezhou Yu , Changbao Huang , Haixin Wu , Qianqian Hu , Huabei Qi , Ya Li , Guojin Liu , Ping Yu , Weihao Chen , Qingli Zhang

{"title":"Numerical and experimental investigation of CdTe crystal growth assisted by a thermal–shielding ring for stable interface control","authors":"Zhicheng Zhu , Youbao Ni , Xuezhou Yu , Changbao Huang , Haixin Wu , Qianqian Hu , Huabei Qi , Ya Li , Guojin Liu , Ping Yu , Weihao Chen , Qingli Zhang","doi":"10.1016/j.mssp.2025.110059","DOIUrl":"10.1016/j.mssp.2025.110059","url":null,"abstract":"<div><div>Cadmium telluride (CdTe) has been widely applied in nuclear radiation detection and infrared optoelectronics. However, twins and grain boundaries formed during growth remain a critical limitation for large–scale application, due to their impact on crystal yield and production cost. In this study, we present a simple and effective approach to stabilize a slightly convex solid–liquid interface by introducing a thermal–shielding ring (TS–ring) into the thermal gradient zone of a Vertical Bridgman furnace. Numerical simulations were conducted to optimize the TS–ring geometry, and crystal growth experiments were performed for validation. The resulting CdTe single crystal exhibited large volumes free of twins and grain boundaries. X–ray rocking curve revealed the full width at half maximum of the as–grown CdTe crystal is around 0.05°. Infrared transmittance reached 65 %–68 %, the etch pit density was below 3 × 10<sup>4</sup> cm<sup>−2</sup>, and the resistivity reached 4.3 × 10<sup>7</sup> Ω cm. These results demonstrate that stabilizing a slightly convex interface via the TS–ring is an effective strategy for improving the quality and yield of CdTe single crystals.</div></div>","PeriodicalId":18240,"journal":{"name":"Materials Science in Semiconductor Processing","volume":"201 ","pages":"Article 110059"},"PeriodicalIF":4.6,"publicationDate":"2025-09-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145057268","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Investigation of gate metal effects on barrier lowering, on-resistance, and breakdown voltage in p-GaN gate HEMTs 栅极金属对p-GaN栅极hemt势垒降低、导通电阻和击穿电压影响的研究

IF 4.6 3区工程技术

Materials Science in Semiconductor Processing Pub Date : 2025-09-13 DOI: 10.1016/j.mssp.2025.110057

Mao Jia , Bin Hou , Ling Yang , Lixin Guo , Xuefeng Zheng , Xiaohua Ma , Yue Hao

引用次数: 0

“In situ preparation of 3D flower like BiOBr/Bi24O31Br10 composite by annealing hydrothermal method for the ciprofloxacin degradation under simulated sunlight irradiation” 《模拟阳光照射下原位制备三维花状BiOBr/Bi24O31Br10复合材料用于环丙沙星降解的退火水热法》

IF 4.6 3区工程技术

Materials Science in Semiconductor Processing Pub Date : 2025-09-13 DOI: 10.1016/j.mssp.2025.110060

L. Mllaoiy , S. Bikerchalen , B. Akhsassi , B. Bakiz , S. Villain , A. Taoufyq , F. Guinneton , H. Hajjoul , J.-R. Gavarri , A. Benlhachemi

{"title":"“In situ preparation of 3D flower like BiOBr/Bi24O31Br10 composite by annealing hydrothermal method for the ciprofloxacin degradation under simulated sunlight irradiation”","authors":"L. Mllaoiy , S. Bikerchalen , B. Akhsassi , B. Bakiz , S. Villain , A. Taoufyq , F. Guinneton , H. Hajjoul , J.-R. Gavarri , A. Benlhachemi","doi":"10.1016/j.mssp.2025.110060","DOIUrl":"10.1016/j.mssp.2025.110060","url":null,"abstract":"<div><div>In this work, a hierarchical photocatalyst, BiOBr/Bi<sub>24</sub>O<sub>31</sub>Br<sub>10</sub>, was synthesized via a simple two-step hydrothermal and annealing process. The BiOBr/Bi<sub>24</sub>O<sub>31</sub>Br<sub>10</sub> microstructure exhibited significantly enhanced photocatalytic performance compared to pure BiOBr and Bi<sub>24</sub>O<sub>31</sub>Br<sub>10</sub>. Under simulated solar irradiation, it achieved 94 % degradation of ciprofloxacin (CIP) in 60 min, with a reaction rate 5.5 times higher than that of pure Bi<sub>24</sub>O<sub>31</sub>Br<sub>10</sub>. Rhodamine B (RhB) was also thoroughly degraded in 20 min. This improvement was attributed to several synergistic effects: the increased BET surface area provided more active sites; the enhanced adsorption capacity toward CIP facilitated its efficient degradation; and the broadened sunlight absorption range promoted the generation of charge carriers with an extended lifetime of 5.70 ns, surpassing that of the individual components. Additionally, the influence of operating parameters such as initial pH, photocatalyst dosage, initial pollutant concentration, and light intensity was systematically investigated.</div></div>","PeriodicalId":18240,"journal":{"name":"Materials Science in Semiconductor Processing","volume":"201 ","pages":"Article 110060"},"PeriodicalIF":4.6,"publicationDate":"2025-09-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145045475","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Enhancing the stability of perovskite solar cells through surface ring-opening reactions 通过表面开环反应提高钙钛矿太阳能电池的稳定性

IF 4.6 3区工程技术

Materials Science in Semiconductor Processing Pub Date : 2025-09-13 DOI: 10.1016/j.mssp.2025.110054

Shengcong Wu , Qiu Xiong , Shui-Yang Lien , Peng Gao

{"title":"Enhancing the stability of perovskite solar cells through surface ring-opening reactions","authors":"Shengcong Wu , Qiu Xiong , Shui-Yang Lien , Peng Gao","doi":"10.1016/j.mssp.2025.110054","DOIUrl":"10.1016/j.mssp.2025.110054","url":null,"abstract":"<div><div>Stability remains a crucial factor limiting the development of perovskite solar cells (PSCs). Traditional surface passivation layers are typically connected to the perovskite layer through hydrogen bonds. These hydrogen bonds are prone to decomposition under outdoor conditions, failing to protect the perovskite layer and potentially damaging the perovskite structure. These issues severely limit the performance and commercialization of PSCs. To address this challenge, this study utilizes the benzyl glycidyl ether (BGE) molecules to form covalent bonds with the ammonium organic cations on the perovskite surface. The covalent bonds strategy exhibits superior stability, while the reaction also generates hydroxyl and secondary amine groups that passivate defects and suppress ion migration inside the perovskite. This strategy significantly enhances the stability parameters of the PSCs, retaining 62 % of the initial efficiency after 1000 h of continuous illumination, which is higher than that of the control (20 %). Moreover, after being stored in an extreme environment of 75 °C for 200 h, these devices still maintained 80 % of initial efficiency, while the control devices were only 60 %.</div></div>","PeriodicalId":18240,"journal":{"name":"Materials Science in Semiconductor Processing","volume":"201 ","pages":"Article 110054"},"PeriodicalIF":4.6,"publicationDate":"2025-09-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145045474","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Tunable hafnium-doped InZnO thin film transistors via plasma-enhanced atomic layer deposition 通过等离子体增强原子层沉积的可调谐掺铪InZnO薄膜晶体管

IF 4.6 3区工程技术

Materials Science in Semiconductor Processing Pub Date : 2025-09-13 DOI: 10.1016/j.mssp.2025.110039

Jiong Liu , Sheng Han , Yu Zhang , Jingxuan Wei , Bojia Chen , Runzhou Li , Pei Yan , Jiangquan Kuang , Xinming Wu , Xuefeng Wu , Rongxu Bai , David W. Zhang , Qingqing Sun , Li Ji , Shen Hu

{"title":"Tunable hafnium-doped InZnO thin film transistors via plasma-enhanced atomic layer deposition","authors":"Jiong Liu , Sheng Han , Yu Zhang , Jingxuan Wei , Bojia Chen , Runzhou Li , Pei Yan , Jiangquan Kuang , Xinming Wu , Xuefeng Wu , Rongxu Bai , David W. Zhang , Qingqing Sun , Li Ji , Shen Hu","doi":"10.1016/j.mssp.2025.110039","DOIUrl":"10.1016/j.mssp.2025.110039","url":null,"abstract":"<div><div>Hafnium-doped InZnO (HIZO) thin film transistors (TFTs) were successfully fabricated via plasma-enhanced atomic layer deposition (PEALD) at low temperature (180 °C) for the first time, omitting the annealing process. Concretely, we adjusted the device performance by modulating the doping concentration of hafnium (Hf) cations and the oxygen vacancy content. The optimal 6.25 % doping content was determined. Based on this optimization, the HIZO TFTs exhibited an excellent field-effect mobility (<em>μ</em><sub><em>FE</em></sub>) of 21.7 cm<sup>2</sup>/V·s, a low threshold voltage (<em>V</em><sub><em>th</em></sub>) of ∼0.1 V, a minimum subthreshold swing (<em>SS</em>) of 69 mV/decade and a fantastic <em>I</em><sub><em>on</em></sub><em>/I</em><sub><em>off</em></sub> of exceeding 10<sup>8</sup> utilizing the hafnium oxide (HfO<sub>2</sub>) dielectric, which was one of the state-of-the-art performances among HIZO TFTs reported to date. Meanwhile, an excellent bias stability under both positive and negative bias stress was achieved. The favorable performance can be attributed to the effective suppression of overabundant oxygen vacancies and the passivation of defects at the channel–dielectric interface by Hf doping. The Hall effect measurement and X-ray photoelectron spectroscopy (XPS) further corroborate the ability to inhibit carrier concentration by Hf addition. This study presents a novel strategy for achieving excellent HIZO TFTs, holding promise for the next-generation high-performance display domain.</div></div>","PeriodicalId":18240,"journal":{"name":"Materials Science in Semiconductor Processing","volume":"201 ","pages":"Article 110039"},"PeriodicalIF":4.6,"publicationDate":"2025-09-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145045470","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Study on the growth behavior of Ni3Sn4 layer in Cu pillar/Ni/Sn microbump under high-temperature stress 高温应力下Cu柱/Ni/Sn微凸起中Ni3Sn4层生长行为研究

IF 4.6 3区工程技术

Materials Science in Semiconductor Processing Pub Date : 2025-09-13 DOI: 10.1016/j.mssp.2025.110058

Hao Yu , Yanqiong Yuan , Jian Wang , Linhua Liu , Zhiwei Fu , Jia-Yue Yang

{"title":"Study on the growth behavior of Ni3Sn4 layer in Cu pillar/Ni/Sn microbump under high-temperature stress","authors":"Hao Yu , Yanqiong Yuan , Jian Wang , Linhua Liu , Zhiwei Fu , Jia-Yue Yang","doi":"10.1016/j.mssp.2025.110058","DOIUrl":"10.1016/j.mssp.2025.110058","url":null,"abstract":"<div><div>Based on the numerical analysis of Ni atomic thermal diffusion flux, a kinetic model for the growth of the Ni<sub>3</sub>Sn<sub>4</sub> intermetallic compound at the Cu pillar/Ni/Sn microbump interface under high-temperature stress is established. Through in-situ microscopic comparative analysis of test samples at 100 °C, 125 °C and 150 °C over varying time intervals, it is observed that at 150 °C Ni<sub>3</sub>Sn<sub>4</sub> exhibits pronounced outward protrusion due to volumetric expansion. The maximum deviation between the model-predicted and experimentally measured Ni<sub>3</sub>Sn<sub>4</sub> thickness is only 0.244 μm (14.8 %). Further analysis of the Ni<sub>3</sub>Sn<sub>4</sub> growth behavior based on the model reveals that its growth rate decreases progressively with increasing thickness. As the Ni<sub>3</sub>Sn<sub>4</sub> thickness increases from 600 nm to 1600 nm, its growth rates at 100 °C, 125 °C, and 150 °C decrease from 0.10 nm/h, 1.22 nm/h, and 7.79 nm/h to 0.04 nm/h, 0.45 nm/h, and 2.93 nm/h, respectively, resulting in a parabolic growth trend of Ni<sub>3</sub>Sn<sub>4</sub> thickness over time. The growth rate of Ni<sub>3</sub>Sn<sub>4</sub> exhibits an exponential increase as a function of temperature. The temperatures corresponding to growth rates below 0.01 nm/h and above 1 nm/h are defined as the inflection point temperatures of “slow-growth” and “explosive-growth” modes, respectively. Since the growth rate of Ni<sub>3</sub>Sn<sub>4</sub> gradually decreases with increasing thickness, the two inflection point temperatures also vary with the Ni<sub>3</sub>Sn<sub>4</sub> thickness.</div></div>","PeriodicalId":18240,"journal":{"name":"Materials Science in Semiconductor Processing","volume":"201 ","pages":"Article 110058"},"PeriodicalIF":4.6,"publicationDate":"2025-09-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145045471","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Fast–charging lithium–ion batteries: Review on enhancing lithium nickel cobalt aluminum oxide cathodes with additives 快充锂离子电池：添加剂增强锂镍钴铝氧化物阴极的研究进展

IF 4.6 3区工程技术

Materials Science in Semiconductor Processing Pub Date : 2025-09-13 DOI: 10.1016/j.mssp.2025.110052

Teh Ubaidah Noh , Noorashrina A. Hamid

{"title":"Fast–charging lithium–ion batteries: Review on enhancing lithium nickel cobalt aluminum oxide cathodes with additives","authors":"Teh Ubaidah Noh , Noorashrina A. Hamid","doi":"10.1016/j.mssp.2025.110052","DOIUrl":"10.1016/j.mssp.2025.110052","url":null,"abstract":"<div><div>The demand for efficient, fast–charging lithium–ion batteries (LIBs) is increasing due to the growing reliance on electric vehicles and portable electronics. However, traditional LIBs have several limitations including thermal instability, rapid degradation, and low specific capacity during fast–charging, which restrict their performance and longevity. Advanced materials and innovative modifications are being explored to overcome these challenges and enhance the capabilities of LIBs. Among these, lithium nickel cobalt aluminum oxide (LiNi<sub>0</sub>.<sub>8</sub>Co<sub>0</sub>.<sub>1</sub>Al<sub>0</sub>.<sub>1</sub>O<sub>2</sub>, NCA) cathodes have emerged as promising candidates due to their high specific capacity (180–200 mAh/g) and superior thermal stability. This review focuses on the optimization of NCA cathodes for fast–charging applications by exploring various additives and methodologies involving conductive carbon, metal oxides, doping elements, surface coatings, polymeric binders, and ionic conductors. These additives are applied using strategies such as mixing with the active material, surface coating, and doping during the synthesis. The impact of these modifications on the performance metrics of the NCA cathode electrode is analyzed, emphasizing optimizing fast–charging capabilities. This review highlights the potential of NCA cathode electrodes to reduce charging times and extend cycle life, while addressing challenges related to material composition and environmental impact. Prospects for future research are discussed to enhance the applicability of NCA cathode electrodes in electric vehicles and portable electronic devices, and to address associated manufacturing challenges.</div></div>","PeriodicalId":18240,"journal":{"name":"Materials Science in Semiconductor Processing","volume":"201 ","pages":"Article 110052"},"PeriodicalIF":4.6,"publicationDate":"2025-09-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145045465","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0