Materials Science in Semiconductor Processing最新文献

{"title":"Photocatalytic remediation of selected emerging organic pollutants in industrial effluent using conducting polymeric-based nanocomposites photocatalysts -A review","authors":"Joshua Akinropo Oyetade ,&nbsp;Kolajo Oluwafemi ,&nbsp;Vanessa N.K. Hammond ,&nbsp;Angela Boateng ,&nbsp;Revocatus Lazaro Machunda ,&nbsp;Askwar Hilonga","doi":"10.1016/j.mssp.2025.109832","DOIUrl":"10.1016/j.mssp.2025.109832","url":null,"abstract":"<div><div>Emerging organic pollutants in industrial effluents pose huge environmental and health challenges, with conventional effluent treatment methods often insufficient for effective abatement of these toxic pollutants. This is the rationale behind the need for the development of a novel class of photocatalysts known as conducting polymeric-based nanocomposites for proficient photocatalytic remediation of these pollutants. The pollutants of interest in this review are the pharmaceutically active compounds (PhACs), pesticides and per- and poly-fluoroalkyl substances <strong>(</strong>PFAS) with appreciable presence in industrial wastewater. The review comparatively reported various state-of-the-art engineering approaches for the fabrication of this class of nanocomposite photocatalysts with well-tailored properties for high-performance especially under visible photon irradiation. The findings identified in-situ polymerization, hydrothermal methods and facile decoration as proficient approaches for the development of this class of novel photocatalysts with over 90 % photocatalytic performance. The study also underscored the concise impacts of the conducting polymers especially their ability to serve as structural support thereby preventing possible leaching of other photocatalytic materials, especially metals. The review also presents the appreciable benefits of lowered agglomeration and efficient separation of electron-hole pairs and unique heterostructures formed due to the synergistic effect of the macromolecules with other materials in the nanocomposite. These attributes point to the stability and recyclable potentials of these fabricated photocatalysts and their versatile applicability for the remediation of targeted EOPs in wastewater.</div></div>","PeriodicalId":18240,"journal":{"name":"Materials Science in Semiconductor Processing","volume":"199 ","pages":"Article 109832"},"PeriodicalIF":4.2,"publicationDate":"2025-07-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144614303","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"How to decorate graphene film into silicon nanowires array for maximizing long-wave infrared photodetection?","authors":"Guanzhen Zou ,&nbsp;Mingzhu Liu ,&nbsp;Shengyi Yang ,&nbsp;Ayesha Zia ,&nbsp;Ying Wang ,&nbsp;Zhenhua Ge ,&nbsp;Mengchun Zhu ,&nbsp;Bingsuo Zou ,&nbsp;Yurong Jiang","doi":"10.1016/j.mssp.2025.109850","DOIUrl":"10.1016/j.mssp.2025.109850","url":null,"abstract":"<div><div>As an exciting material with excellent electrical and optical properties, graphene is widely used in optoelectronics, especially for its absorption band into Terahertz region, therefore it can be used for long-wave infrared (LWIR) photodetectors based on silicon nanowires (Si-NWs) array. How to design the Si-NWs array to maximize the absorption for long-wave infrared (i.e. 8-14 μm) photodetection? To answer this question, in this work, the absorption for LWIR light by Si-NWs array, where both graphene and Au films are filled in its interstitial spaces within Si-NWs array as the active layers, is firstly simulated with finite-difference time-domain (FDTD) method by considering the anisotropic properties of graphene, and then experiments are done to confirm our simulation results. The effective area of graphene on the Si-NWs increases with the height of graphene film filled in the interstitial spaces of Si-NWs, thus to enhance the absorption of LWIR light. A perfect bimodal absorption-peak is obtained in the LWIR region from structure Si-NW/graphene/Au, and our simulation on photodetector Si-NWs/graphene/Au shows a responsivity <em>R</em> of 1.79 mA/W with a specific detectivity (<em>D</em>∗) of 8.41 × 10⁸ Jones under 25 mW/cm² 10 μm illumination. Also, a specific detectivity of 1.1571 × 10⁸ Jones is obtained from our photodetector Ag/Si-NWs/rGO/Au at room temperature, obviously, it is in agreement with our simulation results since some defects are introduced into both Si-NWs array and rGO during their actual manufacturing process. Thus, this work provides a groundwork for graphene-based long-wave infrared optoelectronic devices.</div></div>","PeriodicalId":18240,"journal":{"name":"Materials Science in Semiconductor Processing","volume":"199 ","pages":"Article 109850"},"PeriodicalIF":4.2,"publicationDate":"2025-07-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144596477","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Recent advancements of paper-Based electrochemical biosensors using conductive ink - A brief overview","authors":"Priyanshi Gupta ,&nbsp;Kanishka Bhatia ,&nbsp;Chahat Pahuja ,&nbsp;Jahanvi Pal ,&nbsp;Jay Singh ,&nbsp;Maumita Das Mukherjee","doi":"10.1016/j.mssp.2025.109840","DOIUrl":"10.1016/j.mssp.2025.109840","url":null,"abstract":"<div><div>Amid the escalating demand for precise and rapid quantification across industrial, environmental, and medical sectors, point-of-care and point-of-use technologies are becoming increasingly critical. Flexible, disposable electrochemical sensors, in particular, have emerged as a prominent solution. This mini-review evaluates the recent progress in developing and utilizing conductive inks for the fabrication of these miniaturized electrochemical devices. The use of such inks presents clear advantages, including enhanced flexibility in electrode design, simplified and scalable fabrication, greater cost-effectiveness, and the promotion of environmentally friendly production processes through reduced material waste. Diving deeper, the review provides a comprehensive analysis of electrochemical paper-based analytical devices (ePADs), a key area of development. It offers a thorough summary of the various conductive ink types used in device construction and explores their synthesis processes to improve the foundational understanding of the technology. Furthermore, the text examines and compares different fabrication methodologies, outlining their respective benefits, drawbacks, and specific applications. The insights provided are intended to inform and direct future research and development, aiming to foster the creation of the next generation of effective, affordable, and adaptable electrochemical biosensors.</div></div>","PeriodicalId":18240,"journal":{"name":"Materials Science in Semiconductor Processing","volume":"199 ","pages":"Article 109840"},"PeriodicalIF":4.2,"publicationDate":"2025-07-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144596479","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Cu/dielectric hybrid bonding: Experimental and simulation perspectives","authors":"Seunghyeon Nam ,&nbsp;Jaewon Kim ,&nbsp;Byeongjun An ,&nbsp;Hyunjoo J. Lee","doi":"10.1016/j.mssp.2025.109853","DOIUrl":"10.1016/j.mssp.2025.109853","url":null,"abstract":"<div><div>Recent advances in photolithography have significantly reduced the size of transistors on integrated circuits (ICs). However, the performance demands of new technologies such as machine learning, 5G networks, and the Internet of Things are no longer fulfilled by transistor scaling alone. Accordingly, the focus has shifted from traditional scaling to three-dimensional (3D) packaging techniques that offer advanced heterogeneous integration. Copper (Cu)/dielectric hybrid bonding is a highly practical and promising technology in 3D packaging techniques that allows finer pitches in interconnections. This paper reviews the development and implications of Cu/dielectric hybrid bonding, particularly with SiO₂ and alternative materials such as SiCN and polymers. To address the challenges of fine-pitch hybrid structures, detailed assessments through experimental methods are introduced to enhance connection reliability and resolve coplanarity issues in fine-pitch applications. In addition, this paper presents a comprehensive overview of the simulation approach for Cu/dielectric hybrid bonding, which mitigates the drawbacks of high costs and time consumption associated with experimental approaches. The primary challenge identified in Cu/dielectric hybrid bonding involves achieving precise surface cleanliness and uniformity and managing interfacial stress due to thermal expansion mismatches between copper and dielectric materials, which adversely affect overall bonding reliability. Advancement of surface preparation techniques along with innovative dielectric materials and structures, which reduce the residual stress and enhance alignment accuracy, will facilitate reliable interconnections at ultra-fine pitches in Cu/dielectric hybrid bonding.</div></div>","PeriodicalId":18240,"journal":{"name":"Materials Science in Semiconductor Processing","volume":"199 ","pages":"Article 109853"},"PeriodicalIF":4.2,"publicationDate":"2025-07-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144605849","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Optical properties and electronic structures of ZnK in KDP crystals: First-principles study","authors":"Yu Ren ,&nbsp;Wei Hong ,&nbsp;Tingyu Liu ,&nbsp;Fang Xie ,&nbsp;Ning Meng","doi":"10.1016/j.mssp.2025.109849","DOIUrl":"10.1016/j.mssp.2025.109849","url":null,"abstract":"<div><div>The optical properties and electronic structures of the defect Zn_K were investigated for paraelectric (PE) and ferroelectric (FE) phases KDP crystals. The hybrid density functional theory (HSE) is employed in band-edge corrections for obtaining reliable defect transition levels. The defect formation energies (DFE) have been corrected by the Freysoldt-Neugebauer-Vande Walle (FNV) correction scheme. The distortions of the H-O bond (−13.90 %–29.94 %) and the Zn-O bond (−31.15 %–2.47 %) caused by the defect Zn_K in PE-KDP are more obvious. Large lattice distortion can cause structural instability. The Zn_K defects introduced defect states within the bandgap, predominantly originating from hybridization between O 2p and Zn 3d orbitals, which may assist \"1 + 2\" or \"1 + 1+1\" multiphoton absorption that could induce laser damage under irradiation. The optical properties of Zn_K defects have been obtained by considering electron-phonon coupling effects. In the PE phase, the absorption peak at 6.04 eV (205 nm) consistent well with the experimentally observed peak near 220 nm. The big Stokes red shift and dominant non-radiative recombination means that a large amount of light energy is converted into lattice thermal energy, consequently degrading the LIDT.</div></div>","PeriodicalId":18240,"journal":{"name":"Materials Science in Semiconductor Processing","volume":"199 ","pages":"Article 109849"},"PeriodicalIF":4.2,"publicationDate":"2025-07-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144605848","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Multiscale investigation of mechanical anisotropy and machining-induced damage mechanisms in single-crystal gallium Nitride: Insights from first-principles calculations and molecular dynamics simulations","authors":"Xiaoning Wen ,&nbsp;Jiayun Deng ,&nbsp;Zilei Bai ,&nbsp;Jiacheng Geng ,&nbsp;Hua Wei ,&nbsp;Hanbao Liu ,&nbsp;Feng Qiu ,&nbsp;Feng Hui","doi":"10.1016/j.mssp.2025.109837","DOIUrl":"10.1016/j.mssp.2025.109837","url":null,"abstract":"<div><div>As a critical epitaxial substrate material for chip manufacturing, single-crystal gallium nitride (GaN), a third-generation semiconductor, requires a damage-free, atomically smooth surface for its applications. However, the challenges of high machining difficulty and elevated processing costs have consistently hindered the achievement of such atomically smooth surfaces. This study systematically investigates the relationship between mechanical anisotropy and machining performance of GaN by integrating first-principles calculations and molecular dynamics (MD) simulations, with a focus on three primary crystallographic planes (a-, c-, and m-planes) and three indenter types (Berkovich, Spherical, and Vickers indenters). First-principles calculations reveal significant mechanical anisotropy in GaN: Young's modulus and hardness exhibit strong crystallographic orientation dependence, while shear modulus demonstrates quasi-isotropic behaviour. MD simulations of nanoindentation elucidate the dynamic responses of different planes under mechanical loading, including stress distribution, dislocation nucleation/propagation, and atomic displacement vectors. The results show that a- and m-planes exhibit similar stress distribution and dislocation propagation patterns, whereas the c-plane demonstrates a smaller subsurface damage zone and lower dislocation density, indicating its reduced susceptibility to subsurface damage during machining. Temperature, kinetic energy, and potential energy analyses further highlight the influence of indenter type on localized thermal effects, with Spherical indenters exhibiting superior elastic recovery during c-plane processing. Coordination number and phase transformation analyses confirm that the c-plane under Berkovich indentation effectively suppresses defect generation and maintains a shallower damage layer (∼70–90 Å), underscoring its advantages in ultra-precision machining. These findings provide theoretical insights for optimizing the machining processes of GaN wafers.</div></div>","PeriodicalId":18240,"journal":{"name":"Materials Science in Semiconductor Processing","volume":"199 ","pages":"Article 109837"},"PeriodicalIF":4.2,"publicationDate":"2025-07-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144589216","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Recent advances in aerogels photocatalysts for solar fuel generation: A review","authors":"Irshad Ahmad ,&nbsp;Marwan M. Abduljawad ,&nbsp;Yasser A. Alassmy ,&nbsp;Sultan A. Alshuhri ,&nbsp;Mohammed Qasem Alfaifi ,&nbsp;Fahad M. Albaqi ,&nbsp;Ayman Al-Qattan ,&nbsp;S. AlFaify","doi":"10.1016/j.mssp.2025.109854","DOIUrl":"10.1016/j.mssp.2025.109854","url":null,"abstract":"<div><div>Recently, aerogels have garnered widespread attention in the domain of photocatalytic solar fuel generation due to their remarkable properties, including high porosity, large surface area, ease of separation, stability, and environmental friendliness. Despite significant advancements in the development and applications of aerogels for photocatalytic energy generation, a focused review on diverse aerogels remains lacking. This review highlights the state-of-the-art advancements in recent years related to the synthesis and photocatalytic applications of aerogels for H₂ generation from water splitting and CO₂ reduction. Firstly, this review explores the various advanced synthetic methods employed to prepare aerogels with exceptional photocatalytic properties. Subsequently, it examines the fundamentals of photocatalysis and the photocatalytic properties of aerogels. Furthermore, it discusses the diverse modification approaches used to address the intrinsic limitations of aerogels, aiming to enhance their photocatalytic performance and stability. Finally, the current challenges and future perspectives of aerogels in the realm of photocatalytic solar fuel generation are highlighted and analyzed to direct further optimization and improvement.</div></div>","PeriodicalId":18240,"journal":{"name":"Materials Science in Semiconductor Processing","volume":"199 ","pages":"Article 109854"},"PeriodicalIF":4.2,"publicationDate":"2025-07-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144596415","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Plasma-enhanced atomic layer deposition of Al2O3 on graphene via an in situ-deposited interlayer","authors":"Sarah Riazimehr ,&nbsp;Ardeshir Esteki ,&nbsp;Martin Otto ,&nbsp;Michael Powell ,&nbsp;Gordon Rinke ,&nbsp;Bianca Robertz ,&nbsp;Zhenxing Wang ,&nbsp;Max C. Lemme ,&nbsp;Katie Hore ,&nbsp;Harm Knoops","doi":"10.1016/j.mssp.2025.109829","DOIUrl":"10.1016/j.mssp.2025.109829","url":null,"abstract":"<div><div>A novel method has been developed for the deposition of high-κ dielectrics on graphene, which uses a nonstoichiometric aluminum oxide (AlOX) protective layer. This approach employs mild plasma conditions to directly grow a thin AlOX layer on graphene, followed by the deposition of aluminum oxide (Al₂O₃) via plasma-enhanced atomic layer deposition (PEALD) without breaking the vacuum. A sub-3 nm AlOX layer provides effective protection for graphene and facilitates the formation of functional groups, thereby enabling the deposition of high-quality dielectrics without damaging the graphene. Top-gated graphene field-effect transistor (GFET) devices fabricated via this method demonstrated an electric field strength above 11 MV/cm and an equivalent oxide thickness (EOT) of less than 5 nm on a wafer scale. This deposition technique addresses a significant challenge in transitioning next-generation graphene-based electronics from the laboratory to industrial production.</div></div>","PeriodicalId":18240,"journal":{"name":"Materials Science in Semiconductor Processing","volume":"199 ","pages":"Article 109829"},"PeriodicalIF":4.2,"publicationDate":"2025-07-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144596478","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Fabrication of S-scheme AgI-Y2O3 heterojunction for UV–visible light driven photocatalytic H2 generation","authors":"Irshad Ahmad ,&nbsp;Radhi Alazmi ,&nbsp;Mukhtar Ahmad ,&nbsp;Ejaz Ahmed ,&nbsp;Mohammed Qasem Alfaifi ,&nbsp;Marwan M. Abduljawad ,&nbsp;Mohammed T. Alotaibi ,&nbsp;Samia Ben Ahmed","doi":"10.1016/j.mssp.2025.109824","DOIUrl":"10.1016/j.mssp.2025.109824","url":null,"abstract":"<div><div>The construction of an S-scheme heterojunction is verified as a promising approach for enhancing photocatalytic H₂ performance due to its ability to improve the separation and migration of photogenerated electron-hole pairs with strong redox potentials. Herein, S-scheme heterojunctions with different AgI-to-Y₂O₃ mass ratios are developed by the microwave-hydrothermal integration of AgI nanoparticles with Y₂O₃ nanoparticles. The optimized AgI-Y₂O₃ exhibits an S-scheme heterojunction charge migration route with a robust internal electric field, achieving 72 and 98.2 times higher H₂ generation performance than Y₂O₃ and AgI, respectively. Additionally, the optimal AgI-Y₂O₃ photocatalyst demonstrates strong chemical and structural stability after 25 h of successive H₂ generation recycling experiments. Furthermore, in-situ XPS analysis confirms that photogenerated electrons migrate from the CB of Y₂O₃ to the VB of AgI, leading to an increased separation of high-potential photogenerated electron-hole pairs, consistent with the S-scheme mechanism. This research provides an effective platform for the rational construction of stable and high-performance S-scheme heterojunction photocatalysts to optimize the utilization of photogenerated electron-hole pairs for solar fuel production.</div></div>","PeriodicalId":18240,"journal":{"name":"Materials Science in Semiconductor Processing","volume":"199 ","pages":"Article 109824"},"PeriodicalIF":4.2,"publicationDate":"2025-07-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144596418","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"High-performance perovskite solar cells based on multifunctional 1-(4-fluorophenyl)-2-thiourea additive","authors":"Jusheng Bao ,&nbsp;Tianyuan Liu ,&nbsp;Yulu Tian ,&nbsp;Jiale Hu ,&nbsp;Shengmin Li ,&nbsp;Xuchun Wang ,&nbsp;Mengjia Li ,&nbsp;Chen Chen ,&nbsp;Junming Chen ,&nbsp;You Liu","doi":"10.1016/j.mssp.2025.109851","DOIUrl":"10.1016/j.mssp.2025.109851","url":null,"abstract":"<div><div>Organic-inorganic hybrid perovskite solar cells (PSCs) have attracted widespread attention due to their low cost, excellent solution-processability, and photovoltaic conversion efficiency (PCE) comparable to that of traditional silicon-based cells. However, their performance still falls short of the theoretical Shockley–Queisser limit of 33 %, primarily due to defect-induced nonradiative recombination in polycrystalline perovskite films, which leads to substantial voltage losses and reduced photocurrent. Herein, we report the design and application of a multifunctional thiourea derivative additive, 1-(4-fluorophenyl)-2-thiourea (FPTU), which integrates the strong electron accepting ability of fluorine atoms, the hydrophobicity of benzene rings, and the Pb²⁺ coordination ability of thiourea groups to address these challenges. This FPTU additive not only influences the crystallization quality of perovskite layer and reduces vacancy defects but also boosts the humidity resistance of the devices. Our investigation indicates that PSCs treated with FPTU attain an exceptional PCE of 24.11 %, coupled with a notable enhancement in stability. When left unencapsulated in an environment with 30 % ± 15 % relative humidity (RH), these devices preserve more than 85 % of their initial efficiency after 900 h. These outcomes underscore the significance of thoughtfully designed molecular additives in driving the performance and stability of perovskite photovoltaics closer to real-world application requirements.</div></div>","PeriodicalId":18240,"journal":{"name":"Materials Science in Semiconductor Processing","volume":"199 ","pages":"Article 109851"},"PeriodicalIF":4.2,"publicationDate":"2025-07-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144596417","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}