Materials Science in Semiconductor Processing最新文献

{"title":"ZIF-67-templated NiCoP bimetallic catalysts for enhanced water splitting performance","authors":"Meijie Ding ,&nbsp;Qingsong Yu ,&nbsp;Zhiqiang Wei ,&nbsp;Dexue Liu","doi":"10.1016/j.mssp.2025.109461","DOIUrl":"10.1016/j.mssp.2025.109461","url":null,"abstract":"<div><div>Efficient electrocatalysts for the hydrogen evolution reaction (HER) and oxygen evolution reaction (OER) are essential to overcoming the slow kinetics of water electrolysis. In this study, a bimetallic NiCoP catalyst with a distinctive hollow structure was synthesized via a ZIF-67 template, followed by etching with Ni²⁺ aqueous solution and a subsequent phosphorization process. The resulting material demonstrates exceptional electrochemical performance. In HER, it exhibits excellent catalytic activity, achieving an overpotential of 134.6 mV at a current density of 10 mA cm⁻² and a Tafel slope of 72.3 mV·dec⁻¹. For OER, at a current density of 10 mA cm⁻², the overpotential is 273 mV, with a Tafel slope of 88.9 mV·dec⁻¹. Moreover, the catalyst shows excellent long-term stability. Density functional theory (DFT) calculations indicate that the incorporation of Ni into CoP alters the electronic states at the Fermi level, thereby improving its electrical conductivity. This work not only offers novel insights into the structural design of water splitting catalysts but also highlights the promising potential of NiCoP as an efficient catalyst in the energy conversion domain.</div></div>","PeriodicalId":18240,"journal":{"name":"Materials Science in Semiconductor Processing","volume":"192 ","pages":"Article 109461"},"PeriodicalIF":4.2,"publicationDate":"2025-03-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143619329","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Impact of humidity on long-term stability of HfS2 grown on sapphire substrate by chemical vapor deposition and strategies to prevent native oxidation","authors":"Juchan Hwang ,&nbsp;Junhyeon Mun ,&nbsp;Ki-Tae Lee ,&nbsp;Taehun Lee ,&nbsp;Jongmin Kim ,&nbsp;Jungwook Min ,&nbsp;Kwangwook Park","doi":"10.1016/j.mssp.2025.109471","DOIUrl":"10.1016/j.mssp.2025.109471","url":null,"abstract":"<div><div>Two-dimensional transition metal dichalcogenides (TMDs) are susceptible to native oxidation by oxygen and/or moisture, which can completely alter their physical and chemical properties. Hafnium disulfide (HfS₂), which is expected to exhibit superior properties, also faces significant limitations in long-term device operation due to rapid oxidation into HfS_2-xO_x, resulting in material quality degradation. In this paper, we focus on the native oxidation caused by atmospheric humidity, confirming that the A_1g mode peak of HfS₂ grown by chemical vapor deposition (CVD) completely disappear within a week under high humidity (70 % RH) at room temperature and atmospheric pressure. As countermeasures against oxidation, we deposited polymethyl methacrylate (PMMA) and Al₂O₃ on the HfS₂ surface and evaluated their ability to prevent oxidation by comparing them with native HfS₂ under high and low humidity conditions. Thermodynamic modeling further showed that HfS₂ reacts with O₂ and H₂O to form HfO₂, but not with Al₂O₃, indicating Al₂O₃ effectively protects against HfS₂ oxidation. Our observations give guidance in choosing a protective layer for TMDs to prevent native oxidation.</div></div>","PeriodicalId":18240,"journal":{"name":"Materials Science in Semiconductor Processing","volume":"192 ","pages":"Article 109471"},"PeriodicalIF":4.2,"publicationDate":"2025-03-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143629274","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Study on the properties of boromullite-type luminescent material Al18B4O33: Cr3+","authors":"Yanji Zhang ,&nbsp;Xiuling Liu ,&nbsp;Yanping Wang ,&nbsp;Haiying Sun ,&nbsp;Xiaoyun Mi","doi":"10.1016/j.mssp.2025.109473","DOIUrl":"10.1016/j.mssp.2025.109473","url":null,"abstract":"<div><div>In this paper, the high-temperature solid-phase method was used to synthesise Al₁₈B₄O₃₃: Cr³⁺ luminescent materials with a rod-like structure of about 2 μm. In addition, Cr³⁺ ions occupy the Al³⁺ site in the main body of the Al₁₈B₄O₃₃ host. Investigating its luminescence properties, it is found that under 384 nm excitation, Al₁₈B₄O₃₃: Cr³⁺ produces broadband emission located at 712 nm belonging to the ⁴T₂→⁴A₂ transition of Cr³⁺. The best luminescence intensity was achieved when the Cr³⁺ doping concentration was 0.015 mol. And the quantum efficiency reaches 62.6 %. The relationship between the luminescence intensity of excitation and emission spectra as a function of concentration and suggests that the mechanism of concentration quenching of Cr³⁺ in Al₁₈B₄O₃₃ is caused by non-radiative energy transfer among the nearest-neighbor ions. Through the analysis of thermal stability spectrum, it was found that the luminescence intensity could be achieved up to 65.2 % of the room temperature at 423 K, showing good thermal stability. Testing the water stability of Al₁₈B₄O₃₃: Cr³⁺ showed that the luminescence intensity decreased to 61.8 % of the initial intensity after 5 h of immersion. The results suggest that Al₁₈B₄O₃₃: Cr³⁺ provides a new direction for the prospects of NIR development.</div></div>","PeriodicalId":18240,"journal":{"name":"Materials Science in Semiconductor Processing","volume":"192 ","pages":"Article 109473"},"PeriodicalIF":4.2,"publicationDate":"2025-03-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143629329","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Corrigendum to “A critical review on improving and moving beyond the 2nm horizon: Future directions and impacts in next-generation integrated circuit technologies” [Mater. Sci. Semicond. Process. 190 (2025) 109376]","authors":"Mohamed Morsy,&nbsp;Faycal Znidi,&nbsp;Abdallah Farraj","doi":"10.1016/j.mssp.2025.109476","DOIUrl":"10.1016/j.mssp.2025.109476","url":null,"abstract":"","PeriodicalId":18240,"journal":{"name":"Materials Science in Semiconductor Processing","volume":"192 ","pages":"Article 109476"},"PeriodicalIF":4.2,"publicationDate":"2025-03-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143683865","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Processing quality prediction and multi-objective optimization of polysilicon wire-EDM","authors":"Hongfei Gao,&nbsp;Yadong Gong,&nbsp;Rongdi Zhu,&nbsp;Liya Jin","doi":"10.1016/j.mssp.2025.109462","DOIUrl":"10.1016/j.mssp.2025.109462","url":null,"abstract":"<div><div>Wire electrical discharge machining (wire-EDM) has recently been applied in the cutting of polysilicon ingots. However, the challenge of achieving a balance among processing quality, efficiency, and material waste has imposed limitations on its practical industrial application. In this paper, the Dung Beetle Optimizer (DBO) was employed to optimize the weights and thresholds of a back propagation neural network (BPNN) to construct a DBO-BP prediction model. This prediction model was developed to establish a non-linear mapping relationship between process parameters (open voltage, pulse width, pulse interval ratio, wire speed, and feed velocity) and process indicators (surface roughness and material removal rate). Furthermore, a DBO-BP-PSO multi-objective optimization model was developed by coupling with the Multi-objective Particle Swarm Optimization (MOPSO). This model aimed to minimize surface roughness and kerf width while maximizing material removal rate, thereby determining the optimization combinations of process parameters. The Pareto optimal solution set was obtained through solving this model. The results of further verification experiments demonstrated that the DBO-BP-PSO multi-objective optimization model was capable of effectively achieving precise prediction and optimization of the processing results in polysilicon wire-EDM.</div></div>","PeriodicalId":18240,"journal":{"name":"Materials Science in Semiconductor Processing","volume":"192 ","pages":"Article 109462"},"PeriodicalIF":4.2,"publicationDate":"2025-03-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143610264","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Peanut-shaped manganese-doped bismuth oxide ceramics impregnated over ultrathin rGO films for the photodegradation of azo dye and drug","authors":"Basem Al Alwan ,&nbsp;Muhammad Aadil ,&nbsp;Awais Khalid ,&nbsp;Faisal Mukhtar ,&nbsp;Mousa M. Hossin ,&nbsp;Thamer Alomayri ,&nbsp;Mohamed R. El-Aassar ,&nbsp;Mazen R. Alrahili ,&nbsp;Atef El Jery","doi":"10.1016/j.mssp.2025.109469","DOIUrl":"10.1016/j.mssp.2025.109469","url":null,"abstract":"<div><div>In this report, manganese-doped β-bismuth oxide has been prepared by solvothermal method and impregnated onto ultrathin rGO via a wet-chemical process to prepare rGO@Mn-Bi₂O₃ composite. Mn-doping into Bi₂O₃ crystal lattice was found to reduce the band gap of the resulting material up to 2.11 eV as compared to undoped Bi₂O₃ (3.14 eV). SEM images exhibited compact peanut-like morphology for Mn-Bi₂O₃ embedded on ultrathin and flexible 2D rGO sheets. The photodegradation efficiency of rGO@Mn-Bi₂O_3, along with its other correspondents, i.e., Bi₂O₃ and Mn-Bi₂O₃, was tested against Congo red (CR) dye and diclofenac sodium (DS) pharmaceutical drug. The results showed high photocatalytic efficiency of rGO@Mn-Bi₂O₃ for CR (87.9 %) and DS (91.7 %), which was significantly greater than Mn-Bi₂O₃ (CR = 62.7 % and DS = 77.1 %) and Bi₂O₃ (CR = 45.3 % and DS = 60 %). The enhanced photodegradation ability of rGO@Mn-Bi₂O₃ is due to the synergistic impacts of Mn-doping and rGO amalgamation.</div></div>","PeriodicalId":18240,"journal":{"name":"Materials Science in Semiconductor Processing","volume":"192 ","pages":"Article 109469"},"PeriodicalIF":4.2,"publicationDate":"2025-03-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143610263","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Enhancing hydrogen adsorption performance of hollow silica spheres through the addition of Fe: A study on kinetic and thermodynamic","authors":"Mohammed Faraj Saeid ,&nbsp;B.A. Abdulkadir ,&nbsp;H.D. Setiabudi","doi":"10.1016/j.mssp.2025.109458","DOIUrl":"10.1016/j.mssp.2025.109458","url":null,"abstract":"<div><div>Hydrogen is a clean and renewable energy carrier with the potential to address global energy and environmental challenges. However, its practical implementation is hindered by the lack of efficient storage solutions, as hydrogen has a low energy density by volume under ambient conditions. Enhancing hydrogen storage capacity is crucial for enabling its widespread use in applications. Current porous scaffold materials, such as metal-organic frameworks (MOFs) and zeolites, face significant limitations, including low adsorption capacity under practical operating conditions and slow kinetics. Hollow nano-silica (HSS) has emerged as a promising scaffold for hydrogen storage; however, its low capacity hinders practical implementation. To address this, iron (Fe) was incorporated into the HSS for its high capacity, availability and rapid sorption kinetics, which facilitate the dissociation of H₂ molecules into atomic hydrogen and enhance chemical interactions between Fe and the HSS surface, thereby increasing the availability of active sites and improving hydrogen adsorption capacity. The resulting HSS exhibited a high surface area of 904 m²/g, with highly developed porous structures with a pore volume of 0.87 cm³/g, and an average pore diameter of 3.1 nm. Different amounts of Fe (3–10 wt%) were incorporated into the HSS. To examine the Fe loading effect, the physicochemical properties such as crystal phase, chemical structure, textural properties, and morphology of the Fe-modified scaffold were analysed. Hydrogen adsorption experiments were subsequently conducted under varying reaction conditions. Following the models of Van't Hoff and Langmuir, the kinetic, as well as thermodynamic analyses, were performed. The characterization findings revealed that the Fe was uniformly distributed within the HSS without causing any alterations to the original structure. Optimal hydrogen adsorption, reaching 2.42 wt%, was achieved with a 5.0 wt% Fe loading, 0.1 g catalyst loading, and at a 523 K temperature. Kinetic results showed that the adsorption followed a pseudo-second-order model, suggesting that the adsorption rate is likely governed by the availability of adsorption sites and the interactions between hydrogen and the adsorbent surface. The 5%Fe-HSS adsorbents demonstrated strong reusability, with less than a 6.4 % loss in activity after four consecutive cycles. These findings suggest that incorporating Fe into the silica structure is an efficient approach for improving the hydrogen adsorption capacity of HSS.</div></div>","PeriodicalId":18240,"journal":{"name":"Materials Science in Semiconductor Processing","volume":"192 ","pages":"Article 109458"},"PeriodicalIF":4.2,"publicationDate":"2025-03-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143600580","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Surface modification of MoS2 and WSe2 with TiOx nanoparticles for doping control","authors":"Yoobin Oh,&nbsp;Woong Choi","doi":"10.1016/j.mssp.2025.109464","DOIUrl":"10.1016/j.mssp.2025.109464","url":null,"abstract":"<div><div>This study explores the effect of TiO_x nanoparticles on the doping behavior in multilayer <em>n</em>-type MoS₂ and <em>p</em>-type WSe₂ crystals. The deposition of a 1-nm-thick Ti via electron-beam evaporation under high vacuum resulted in the formation of oxygen-rich TiO_x nanoparticles, indicated through scanning electron microscopy, atomic force microscopy, and X-ray photoelectron spectroscopy. X-ray photoelectron spectroscopy and Raman analyses revealed suppressed <em>n</em>-type doping in MoS₂ and enhanced <em>p</em>-type doping in WSe₂. Transistor characteristics showed a positive threshold voltage shift and altered on-current, consistent with the observed doping trends. The observed <em>p</em>-type doping behavior was further supported by the increased work function values measured using Kelvin probe force microscopy. These results demonstrate that the TiO_x nanoparticles effectively modulate the doping characteristics of MoS₂ and WSe₂, providing a simple and effective approach for doping control in devices based on two-dimensional materials.</div></div>","PeriodicalId":18240,"journal":{"name":"Materials Science in Semiconductor Processing","volume":"192 ","pages":"Article 109464"},"PeriodicalIF":4.2,"publicationDate":"2025-03-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143592201","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"A novel room-temperature surface Si3N4 patterned As+ ion implant solution to wafer warpagemodulation in 3D NAND flash fabrication","authors":"Kun Zhang ,&nbsp;Xiaomin Cheng ,&nbsp;Xiangshui Miao ,&nbsp;Zhiliang Xia","doi":"10.1016/j.mssp.2025.109467","DOIUrl":"10.1016/j.mssp.2025.109467","url":null,"abstract":"<div><div>Wafer warpage is one of the most critical challenges for 3D NAND flash fabrication. In this study, room temperature patterned ion implant with various width is applied to release the stress in plasma enhanced chemical vapor deposition (PECVD) fabricated Si₃N₄ film for curl-shape wafer warpage modulation. The implant pattern method can be used to precisely control the local stress in Si₃N₄ films, and thus the 2D (top-view) and 3D wafer profile can be flexibly adjusted from curl-shape to flat. The properties, microstructure, film stress and wafer warpage of Si₃N₄ film before and after implant are analysed by patterned wafer geometry (PWG), Transmission Electron Microscope (TEM), Fourier-transform infrared spectroscopy (FTIR), Electron Paramagnetic Resonance (EPR), X-ray Photoelectron Spectroscopy (XPS), atomic force microscopy (AFM) and nanoindentation. From these analyses, we conclude that the improvement of wafer warpage is related to stress compensation between the implant and non-implant regions. The stress compensation mechanism in PECVD fabricated Si₃N₄ film is attributed to breaking of Si-N, Si-H and N-H bonds in Si₃N₄ film which induces a stress difference between the implant and non-implant regions, ultimately, the film stress on the front and back (Si₃N₄) of 3D NAND can be balanced, causing the wafer warpage change of 3D NAND flash from curl-shape to flat. Since ion implantation is performed at room temperature and can improve the wafer surface roughness, ion implantation is helpful for both the reliability of device and the subsequent process of 3D NAND flash. It is first time reported that a novel room-temperature patterned ion implant method can be used to adjust the local stress and regulate the wafer warpage in 3D NAND flash fabrication.</div></div>","PeriodicalId":18240,"journal":{"name":"Materials Science in Semiconductor Processing","volume":"192 ","pages":"Article 109467"},"PeriodicalIF":4.2,"publicationDate":"2025-03-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143592202","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Defect evolution in gallium oxide during stretching process: A molecular dynamics simulation","authors":"Rui Li ,&nbsp;Zijun Qi ,&nbsp;Zhanpeng Sun ,&nbsp;Biao Meng ,&nbsp;Wei Shen ,&nbsp;Zhaofu Zhang ,&nbsp;Gai Wu","doi":"10.1016/j.mssp.2025.109463","DOIUrl":"10.1016/j.mssp.2025.109463","url":null,"abstract":"<div><div>Gallium oxide (Ga₂O₃) is a new generation ultra-wide bandgap semiconductor material with excellent properties such as high electron mobility, high-voltage electrical response speed, and radiation resistance. However, few reports currently exist on the nanomechanical properties of Ga₂O₃. In this study, a potential function of Ga₂O₃ can be used to describe <em>α</em>-, <em>β</em>- and <em>ε</em>-phases was developed through machine learning approach. Based on the developed potential function, the mechanical properties and defect evolution of Ga₂O₃ under different crystal structures, defects, and temperatures were thoroughly studied. The results indicate that the mechanical properties of Ga₂O₃ with different crystal phases exhibit significant anisotropy. Among them, the α phase Ga₂O₃ endures the largest deformation force, and the <em>β</em> phase undergoes the highest deformation. Upon loading <em>α</em>-Ga₂O₃, the slip phase transition occurs, whereas, for the <em>β</em>- and <em>ε</em>-Ga₂O₃, the amorphous phase transition occurs directly along the fracture interface without slip phase transition. Ga₂O₃ exhibits typical brittle fracture during tensile fracture. The adhesion degree of atoms at the fracture interface increases with the rise of temperature. The existence of defects in Ga₂O₃ changes the direction of phase transformation slip during the tensile fracture. The increased temperature leads to an increase in the proportion of amorphous phase transformation of Ga₂O₃ during stretching, but the proportion of bond breakage shows an overall downward trend.</div></div>","PeriodicalId":18240,"journal":{"name":"Materials Science in Semiconductor Processing","volume":"192 ","pages":"Article 109463"},"PeriodicalIF":4.2,"publicationDate":"2025-03-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143592200","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}