Materials Science in Semiconductor Processing最新文献

{"title":"Fast response self-powered solar-blind UV photodetector based on NiO/Ga2O3 p-n junction","authors":"Jinpei Wang ,&nbsp;Qing Li ,&nbsp;Wei Mi ,&nbsp;Di Wang ,&nbsp;Mingsheng Xu ,&nbsp;LongFei Xiao ,&nbsp;Xingcheng Zhang ,&nbsp;Chongbiao Luan ,&nbsp;Jinshi Zhao","doi":"10.1016/j.mssp.2024.109084","DOIUrl":"10.1016/j.mssp.2024.109084","url":null,"abstract":"<div><div>The wide-bandgap semiconductor Ga₂O₃ exhibits significant promise for application in solar-blind photodetectors (SBPDs) owing to its unique properties. Nevertheless, its practical implementation in photodetectors (PDs) is impeded by the inherent limitations of slow response/recovery times and the intricacies associated with p-type doping, necessitating further scientific research and technological advancements to overcome these challenges. A fast response self-powered SBPD based on p-NiO/n-Ga₂O₃ heterojunctions constructed by magnetron sputtering method. The effect of different oxygen partial pressures in the sputtering gas on the performance of NiO films and heterojunction PDs was investigated. Through the manipulation of the oxygen partial pressure, p-n junction PDs were successfully prepared, and the optimization of their optical performance was achieved. Irradiated with 254 nm ultraviolet light, the photodetector (PD) with an oxygen partial pressure of 50 % exhibited excellent rectification characteristics, with maximum optical responsivity at zero bias (5.08 mA/W), best detectability (3.19 × 10¹¹ Jones) and fastest response/decay time (62/67 ms). The PDs function autonomously, requiring no external power source, and boast an extremely rapid response time. Our research provides an effective method for the preparation of high-performance heterojunction self-powered SBPD based on Ga₂O₃ thin films.</div></div>","PeriodicalId":18240,"journal":{"name":"Materials Science in Semiconductor Processing","volume":"186 ","pages":"Article 109084"},"PeriodicalIF":4.2,"publicationDate":"2024-11-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142650750","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Predictions of new KTaSn half-Heusler compound for spintronic, thermoelectric and optoelectronic applications: A first-principles study","authors":"Sabir Makhlouf ,&nbsp;Malika Labidi ,&nbsp;Seif Eddine Amara ,&nbsp;Abdelaziz Amara ,&nbsp;Hemza Kheribot ,&nbsp;Ahmed Yasser Behlali ,&nbsp;Zakaria Khadhraoui","doi":"10.1016/j.mssp.2024.109067","DOIUrl":"10.1016/j.mssp.2024.109067","url":null,"abstract":"<div><div>Structural, electronic, magnetic, elastic, optical, thermodynamic, and thermoelectric characteristics of KTaSn half-Heusler compound are investigated using density functional theory (DFT). GGA-mBJ approximation calculations showed a direct minority spin band gap energy of 1.28 eV and a spin polarization of 100 %. The calculated total magnetic moment and Curie temperature are 2 μ_B and 380 K respectively. Elastic constants study and formation energy calculation revealed that the material is mechanically and thermodynamically stable and has a ductile nature. 0ptical properties of KTaSn half-Heusler alloy were similarly investigated to highlight its potential for optoelectronic applications. Finally, utilizing Boltzmann's quasi-classical theory, transport properties were studied and yielded a high figure of merit ZT value of 0.62 indicating that the material is suitable for applications in thermoelectric devices.</div></div>","PeriodicalId":18240,"journal":{"name":"Materials Science in Semiconductor Processing","volume":"186 ","pages":"Article 109067"},"PeriodicalIF":4.2,"publicationDate":"2024-11-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142651348","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"First principles study of electronic, optical, thermodynamic, and thermoelectric properties of Cs2LiTlX6 (X = Cl, Br, I) for energy harvesting applications","authors":"Samah Saidi ,&nbsp;Syed Awais Rouf ,&nbsp;Noura Dawas Alkhaldi ,&nbsp;A.I. Aljameel ,&nbsp;Saud Alotaibi ,&nbsp;Q. Mahmood","doi":"10.1016/j.mssp.2024.109103","DOIUrl":"10.1016/j.mssp.2024.109103","url":null,"abstract":"<div><div>Double perovskites are appealing aspirants for optoelectronic and thermoelectric applications because they are stable, cheap, and lead-free. The evaluation of Cs₂LiTlX₆ (X = Cl, Br, I) encompasses stability confirmation and assessments of mechanical, thermodynamic, optical, and transport characteristics. The computations of formation energy satisfy the thermodynamic existence, whereas evaluations of the tolerance factor confirm structural existence. The scrutiny of elastic constants confirmed the adherence to Born's criteria and the validity of the mechanical integrity of these materials. The employment of Navier's velocities facilitated the investigation into Debye temperature and lattice conductivity. The tuning of the band gap from 2.33 to 0.16 eV showed distinctive optoelectronic features. Optical characteristics, including absorption spectra, light energy dispersion, refractive properties, and optical loss, provided valuable insights into the modified optical character. Additionally, thermoelectric parameters, incorporating conductivities, the Seebeck effect, and performance were analyzed for temperature range zero to 400 K. Identifying a substantial figure of merit (ZT) and remarkably lower lattice vibrational frequencies at ambient temperature emphasizes the potential of these materials for thermoelectric devices.</div></div>","PeriodicalId":18240,"journal":{"name":"Materials Science in Semiconductor Processing","volume":"186 ","pages":"Article 109103"},"PeriodicalIF":4.2,"publicationDate":"2024-11-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142651244","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Recent progress in group Ⅲ-nitride Micro-LED displays: From material improvement methods, device optimization techniques to full-color realization strategies","authors":"Jiawang Shi ,&nbsp;Yiren Chen ,&nbsp;Guoqing Miao ,&nbsp;Hong Jiang ,&nbsp;Hang Song","doi":"10.1016/j.mssp.2024.109090","DOIUrl":"10.1016/j.mssp.2024.109090","url":null,"abstract":"<div><div>As a typical candidate in the field of next-generation optoelectronic display, micro-light-emitting diodes (Micro-LEDs) have drawn a great deal of attention for their unrivalled performance advantages, such as active luminescence, low-power consumption, wide color gamut, long lifetime, fast response speed, and so on. As an advanced display unit, Micro-LEDs conform to the development trend of the information era, and can meet the increasing demand for high-performance micro displays in the development of intelligent devices such as augmented reality (AR), virtual reality (VR) and naked eye 3D projection. However, there are still some obstacles in the process of commercialization of Micro-LEDs. In order to have a remarkable position in future display technology, the Micro-LEDs need to overcome problems related to overall performance of the device itself and high cost of manufacturing. In this review, focusing on the improvement methods for material growth, the optimized techniques for device preparation, and full-color realization strategies for full-color displays, the latest key technological breakthroughs and advanced solutions in these aspects are summarized, and the future development of Micro-LED displays is prospected.</div></div>","PeriodicalId":18240,"journal":{"name":"Materials Science in Semiconductor Processing","volume":"186 ","pages":"Article 109090"},"PeriodicalIF":4.2,"publicationDate":"2024-11-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142650616","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"First principles investigations on structural, electronic, optical, and thermodynamical properties of bulk and surfaces of In2CO","authors":"Hira Batool ,&nbsp;Abdul Majid ,&nbsp;Abdul Manan ,&nbsp;Naeem Ahmed ,&nbsp;Sajjad Haider ,&nbsp;Kamran Alam","doi":"10.1016/j.mssp.2024.109092","DOIUrl":"10.1016/j.mssp.2024.109092","url":null,"abstract":"<div><div>This study reports first-principles investigations of the structural, electronic, thermal, and optical properties of a novel material In₂CO in bulk phase and slab models in (001), (100), (101), and (011) orientations to develop a fundamental understanding of its characteristics. The material appeared structurally as well as dynamically stable in the orthorhombic phase. The thermal properties demonstrated that the material's heat capacity is more temperature-sensitive than entropy and enthalpy. The electronic band structure analysis revealed that the orthorhombic phase material is a semiconductor with a narrow indirect band gap. The electronic structures modeled using the spin-orbit coupling yielded the metallic phase of the slabs except for (001) orientation. The electromagnetic absorption characteristics of the compound are also investigated to explore the material's potential in optoelectronic applications. The direction-dependent study of optical characteristics revealed that the (001) slab of the material can be an efficient infrared detector. The survey findings provide instrumental outcomes in utilizing In₂CO in electronic and optoelectronic applications.</div></div>","PeriodicalId":18240,"journal":{"name":"Materials Science in Semiconductor Processing","volume":"186 ","pages":"Article 109092"},"PeriodicalIF":4.2,"publicationDate":"2024-11-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142650745","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Cu/S Co-anchoring junction boosted the photogenerated carrier separation efficiency in g-C3N5 for enhanced H2 evolution","authors":"Yajie Wang ,&nbsp;Yanan Gao ,&nbsp;Jingxuan Yang ,&nbsp;Bin Liu","doi":"10.1016/j.mssp.2024.109074","DOIUrl":"10.1016/j.mssp.2024.109074","url":null,"abstract":"<div><div>C₃N₅ is emerging as an important visible light catalyst because of its narrow band gap, nontoxicity and thermal stability. Herein, sulfur-doped g-C₃N₅ (SCN) was prepared by copolymerization of thioacetamide (TAA) and 3-amino-1,2,4-triazole (3-AT). Then copper nanoparticles (Cu NPs) were anchored onto the SCN framework, resulting in the formation of Cu/SCN. It was found that the average H₂ production rate of SCN and Cu/SCN was 0.76 and 1.34 mmol g⁻¹ h⁻¹, which was much higher than that of C₃N₅, respectively. Acting as a new active spots, sulfur doping effectively reduces the band gap of g-C₃N₅, and the formation of S-Cu bonds further creates an efficient electron transport pathway. As a result, Cu/SCN possesses a broader visible light absorption spectrum, stronger reduction capability, and greater efficiency in photo-induced carrier separation and transfer. Therefore, this work introduces a novel strategy for design of high efficiency photocatalytic H₂ evolution carbon nitride through non-noble metal and sulfur anchoring junction.</div></div>","PeriodicalId":18240,"journal":{"name":"Materials Science in Semiconductor Processing","volume":"186 ","pages":"Article 109074"},"PeriodicalIF":4.2,"publicationDate":"2024-11-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142650749","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Thermoelectric power generator module using n-type Sb₂S₃ and p-type Bi₂Te₃-coated cotton fabric for wearable device applications","authors":"S. Nanthini ,&nbsp;H. Shankar ,&nbsp;Pandiyarasan Veluswamy","doi":"10.1016/j.mssp.2024.109096","DOIUrl":"10.1016/j.mssp.2024.109096","url":null,"abstract":"<div><div>Antimony trisulfide (Sb₂S₃), a binary metal chalcogenide, exhibits significant promise for energy conversion applications due to its tunable bandgap and exceptional stability under exposure to moisture and air, making it a strong candidate for thermoelectric applications. In this study, Sb₂S₃ was synthesized via co-precipitation method and subsequently coated onto cotton fabric using a formulated ink. X-ray diffraction (XRD) and scanning electron microscopy (SEM) analyses confirmed its orthorhombic crystalline structure and nanorod-like morphology. Sb₂S₃ was found to possess an indirect bandgap of 1.70 eV in its amorphous phase and 1.52 eV in its crystalline phase. Fourier-transform infrared (FTIR) spectroscopy revealed characteristic peaks at 447 cm⁻¹ and 568 cm⁻¹, corresponding to the symmetric stretching vibrations of Sb-O and Sb-S bonds, respectively. Current-voltage (I-V) measurements indicated near-ohmic behavior with an electrical conductivity of 2 × 10⁻⁵ S/cm, while Hall effect measurements confirmed its n-type semiconducting nature. The thermoelectric evaluation of Sb₂S₃-coated cotton fabrics demonstrated n-type behavior, with the Seebeck coefficient increasing with temperature, reaching −185 μV/K at 293 K with a notable power factor of 6.845 × 10⁻⁴ nW/cmK². The material also exhibited low thermal conductivity (0.077 W/mK) and an effusivity of 223.95 Ws¹^/²/m²K. For the first time, a thermoelectric device was successfully fabricated by combining Sb₂S₃ as the n-type material with Bi₂Te₃ as the p-type material. This device, integrated into a wearable hand band, demonstrated an output voltage of 4.7 mV under a temperature difference of approximately 4 °C, highlighting its significant potential for low-power applications in wearable technology. The successful integration of these materials into a flexible substrate underscores their viability in next-generation thermoelectric energy harvesting devices.</div></div>","PeriodicalId":18240,"journal":{"name":"Materials Science in Semiconductor Processing","volume":"186 ","pages":"Article 109096"},"PeriodicalIF":4.2,"publicationDate":"2024-11-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142651328","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Theoretical investigation of the physical characterization of the ordered MAX phase metallic ceramic Mo2Ti2AlC3","authors":"Jing Li ,&nbsp;Xu Zhang ,&nbsp;Haichuan Chen","doi":"10.1016/j.mssp.2024.109097","DOIUrl":"10.1016/j.mssp.2024.109097","url":null,"abstract":"<div><div>The first-principles calculations based on the density functional theory were employed to explore the electronic structure, bonding nature, mechanical behavior, and thermodynamic characterization of the newly synthesized 413 MAX phase metallic ceramic Mo₂Ti₂AlC₃. The ground-state crystal structure of Mo₂Ti₂AlC₃ was predicted and the results show that its structure was in agreement with published experimental and theoretical data. The density of states, Mulliken population, and charge density difference map were investigated, and the results reveals that Mo₂Ti₂AlC₃ has a metallic character, and the bonding nature is a mixture of metallic and covalent bonds, which is consistent with that of other MAX materials. The mechanical stability has been verified utilizing the generalized Born-Huang criterion. The mechanical analysis reveals that Mo₂Ti₂AlC₃ is brittle, has a low Vickers hardness (7.3 GPa), and exhibits elastic anisotropy characteristics. Finally, the predicted Debye temperatures, total thermal conductivity, and melting temperature are 726.2 K, 15.31 Wm⁻¹K⁻¹, and 2275.5 K, respectively. Mo₂Ti₂AlC₃ is a potential choice for use in high-temperature scenarios due to its high melting temperature and low thermal conductivity.</div></div>","PeriodicalId":18240,"journal":{"name":"Materials Science in Semiconductor Processing","volume":"186 ","pages":"Article 109097"},"PeriodicalIF":4.2,"publicationDate":"2024-11-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142651326","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Scalable graphene nanogrid FET biosensors: Fabrication & characterization for sub-femtomolar detection of viral proteins","authors":"V.N. Senthil Kumaran ,&nbsp;M. Venkatesh ,&nbsp;Abdulrahman Saad Alqahtani ,&nbsp;Azath Mubarakali ,&nbsp;P. Parthasarathy","doi":"10.1016/j.mssp.2024.109071","DOIUrl":"10.1016/j.mssp.2024.109071","url":null,"abstract":"<div><div>The development of highly sensitive biosensors has been significantly advanced by graphene nanostructures, particularly nanogrids, due to their remarkable surface area-to-volume ratio, which enhances biomolecule detection at ultra-low concentrations. This study introduces a scalable fabrication technique for graphene nanogrids integrated into field-effect transistor (FET) biosensors, specifically designed for sub-femtomolar detection of viral proteins. Through the optimization of pore size and distribution, the graphene nanogrid FET biosensors demonstrated high signal-to-noise ratios (SNR) and overcame challenges associated with non-specific antigen interference. The surface antigen was detected at 0.25 fM in serum, even in the presence of Hepatitis C. In addition to these advancements, structural analysis techniques, including XPS and TEM, were employed to observe the effects of lattice temperature and core structures on the electronic band gap, which directly influenced electron mobility. Lattice temperature effects were analyzed for their impact on sensitivity, revealing that optimized temperature control significantly improved detection performance, while precise adjustments in pore morphology and material composition reduced device non-linearity and minimized quantification errors. By operating in heterodyne mode (80 kHz–2 MHz) and utilizing a probabilistic neural network (PNN), the sensor mitigated Debye screening effects, achieving a 70 % increase in SNR, detecting 0.20 fM of Hepatitis B viral proteins with 60 % sensitivity and 6 % standard deviation, demonstrating potential for ultra-sensitive biomedical detection with enhanced electron mobility and reduced non-linearity.</div></div>","PeriodicalId":18240,"journal":{"name":"Materials Science in Semiconductor Processing","volume":"186 ","pages":"Article 109071"},"PeriodicalIF":4.2,"publicationDate":"2024-11-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142651325","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"The investigation of the physical properties of nickel-based hydrides and the prediction of their suitability for hydrogen storage application","authors":"M. Kashif Masood ,&nbsp;Warda Elaggoune ,&nbsp;Khawla Chaoui ,&nbsp;Shumaila Bibi ,&nbsp;Muhammad Isa Khan ,&nbsp;Muhammad Usman ,&nbsp;Asma A. Alothman ,&nbsp;Javed Rehman","doi":"10.1016/j.mssp.2024.109094","DOIUrl":"10.1016/j.mssp.2024.109094","url":null,"abstract":"<div><div>We exploited density functional theory (DFT) to conduct a thorough examination of the structural, mechanical, electronic, magnetic, thermodynamic, optical, and hydrogen storage features of the new XNiH₃ (X: Sc and Y) perovskite hydrides. We discovered that the XScH₃ compounds exhibited both mechanical and thermal stability through the computation of cohesive energy and elastic moduli. The crystal structure of XNiH₃ (X: Sc and Y) compounds exhibits lattice constants of 3.376 Å for Sc and 3.525 Å for Y. The metallic nature of these compounds is currently assessed based on overall observations of electronic density of states and band structure. The analysis of B/G ratio (Pugh's ratio) indicated that these compounds are pliable materials. Further investigation revealed that their bond types primarily exhibit ionic nature. Through these compound properties, it has been determined that they are conductors with non-magnetic order. Moreover, these materials demonstrate promising optical characteristics such as conductivity, absorption, dielectric function, and refractive index. Our predictions suggest that ScNiH₃ is a superior hydride with precise optical features. The vibrational stability of these crystalline materials was investigated using phonon dispersion curves and molecular dynamics simulations. Additionally, as their thermal characteristics vary with temperature, we studied heat capacity, entropy, energy, and free energy. Furthermore, the study assessed the hydrogen storage capacity of the XNiH₃ compounds, yielding 2.83 wt% for ScNiH₃ and 2.00 wt% for YNiH₃. This work represents the first examination of XNiH₃ perovskite hydrides, offering new opportunities in the field of hydrogen storage materials.</div></div>","PeriodicalId":18240,"journal":{"name":"Materials Science in Semiconductor Processing","volume":"186 ","pages":"Article 109094"},"PeriodicalIF":4.2,"publicationDate":"2024-11-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142650627","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}