Thermal-moisture interaction effects on delamination reliability of advanced fan-out packages

IF 4.6 3区工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC

Materials Science in Semiconductor Processing Pub Date : 2025-09-15 DOI:10.1016/j.mssp.2025.110037

Meng-Kai Shih , Yi-Hao Chen , Bo-Rui Ding , Chin-Ju Hsieh , I-Hung Lin , Tom Ni

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引用次数: 0

Abstract

—Fan-out (FO) packages are critical for achieving high I/O density and miniaturization in advanced electronic products. However, their complex material interfaces and exposure to harsh hygrothermal conditions pose significant reliability concerns, particularly interfacial delamination. Accordingly, this study experimentally evaluated the interfacial adhesion at the polyimide (PI)/copper interface of a typical FO package following moisture exposure, using double cantilever beam (DCB) tests to determine the critical strain energy release rate GC. In addition, a comprehensive three-dimensional finite element (FE) model accounting for the effects of moisture diffusion, thermal loading, and mechanical stress was developed to simulate the hygrothermal behavior of the package. The model was validated by comparing the simulated results for the package warpage with the experimental measurements. The virtual crack closure technique (VCCT) was then applied to further analyze the delamination behavior of the FO package at the critical interfaces under combined hygrothermal loading. Finally, the Taguchi method was employed to evaluate the effects of the key structural design parameters of the FO package, such as the PI thickness and epoxy molding compound (EMC) material, on the strain energy release rate (GI) and to identify the optimal package configuration. The results showed that increasing the PI thickness and using an EMC with a compatible coefficient of thermal expansion significantly reduced GI and thus mitigated the risk of delamination. The findings presented in this study offer practical design guidance for enhancing the mechanical reliability of FO packages in humid and thermally demanding environments.

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热-湿相互作用对先进扇出封装分层可靠性的影响

在先进的电子产品中，扇形输出（FO）封装对于实现高I/O密度和小型化至关重要。然而，它们复杂的材料界面和暴露在恶劣的湿热条件下，造成了严重的可靠性问题，特别是界面分层。因此，本研究通过双悬臂梁（DCB）测试来确定临界应变能释放率GC，实验评估了典型FO封装在潮湿暴露后聚酰亚胺(PI)/铜界面的界面粘附性。此外，还建立了考虑水分扩散、热载荷和机械应力影响的综合三维有限元模型来模拟包装的湿热行为。将模拟结果与实验结果进行了比较，验证了模型的正确性。应用虚拟裂纹闭合技术（VCCT）进一步分析了复合湿热载荷作用下FO包层在关键界面处的分层行为。最后，采用Taguchi方法评估了FO封装关键结构设计参数（PI厚度和环氧成型化合物（EMC）材料）对应变能释放率（GI）的影响，并确定了最佳封装配置。结果表明，增加PI厚度和使用具有相容热膨胀系数的EMC可以显著降低GI，从而降低分层风险。本研究结果为在潮湿和热要求苛刻的环境中提高FO封装的机械可靠性提供了实用的设计指导。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

Materials Science in Semiconductor Processing 工程技术-材料科学：综合

CiteScore

8.00

自引率

4.90%

发文量

780

审稿时长

42 days

期刊介绍： Materials Science in Semiconductor Processing provides a unique forum for the discussion of novel processing, applications and theoretical studies of functional materials and devices for (opto)electronics, sensors, detectors, biotechnology and green energy. Each issue will aim to provide a snapshot of current insights, new achievements, breakthroughs and future trends in such diverse fields as microelectronics, energy conversion and storage, communications, biotechnology, (photo)catalysis, nano- and thin-film technology, hybrid and composite materials, chemical processing, vapor-phase deposition, device fabrication, and modelling, which are the backbone of advanced semiconductor processing and applications. Coverage will include: advanced lithography for submicron devices; etching and related topics; ion implantation; damage evolution and related issues; plasma and thermal CVD; rapid thermal processing; advanced metallization and interconnect schemes; thin dielectric layers, oxidation; sol-gel processing; chemical bath and (electro)chemical deposition; compound semiconductor processing; new non-oxide materials and their applications; (macro)molecular and hybrid materials; molecular dynamics, ab-initio methods, Monte Carlo, etc.; new materials and processes for discrete and integrated circuits; magnetic materials and spintronics; heterostructures and quantum devices; engineering of the electrical and optical properties of semiconductors; crystal growth mechanisms; reliability, defect density, intrinsic impurities and defects.