Materials Science in Semiconductor Processing最新文献

{"title":"Effect of nitrogen plasma treatment on carrier mobility in polycrystalline Ge thin films","authors":"Jisun Yu,&nbsp;Woong Choi","doi":"10.1016/j.mssp.2025.110169","DOIUrl":"10.1016/j.mssp.2025.110169","url":null,"abstract":"<div><div>This study investigates the effects of nitrogen plasma treatment on the carrier mobility of solid-phase-crystallized polycrystalline Ge thin films. Hall measurements reveal that optimal plasma treatment at 100 W for 60 s significantly enhances hole mobility while reducing carrier concentration, suggesting effective defect passivation. Raman and electron backscattered diffraction analyses confirm that these electrical improvements occur without notable changes in crystallinity or grain structure. X-ray photoelectron spectroscopy reveals the formation of Ge-N and Ge-O_xN_y bonding states, with optimal nitrogen incorporation occurring at moderate plasma conditions. In contrast, high-power or prolonged treatment leads to surface degradation and increased oxygen incorporation. These findings demonstrate that nitrogen plasma treatment can improve carrier mobility in polycrystalline Ge through controlled chemical passivation, but only within a narrow processing window. The results provide critical insights for optimizing plasma-based surface engineering in polycrystalline semiconductor devices.</div></div>","PeriodicalId":18240,"journal":{"name":"Materials Science in Semiconductor Processing","volume":"202 ","pages":"Article 110169"},"PeriodicalIF":4.6,"publicationDate":"2025-10-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145322106","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Co dopant enhance the thermoelectric properties of Cu2Se films via magnetism and smooth surface","authors":"Linlin Liu,&nbsp;Jingna Zhang,&nbsp;Xinyu Bai,&nbsp;Shiying Liu","doi":"10.1016/j.mssp.2025.110116","DOIUrl":"10.1016/j.mssp.2025.110116","url":null,"abstract":"<div><div>Cu₂Se has a liquid-like structure and is a promising thermoelectric material. However, the defects in Cu₂Se thin films are difficult to control, which limits the improvement of the thermoelectric performance of the films. Co doping inhibits the thermally-induced phase transition of Cu₂Se thin films and enhances the thermoelectric performance by leveraging the interaction between the magnetism of Co and the film carriers. Changes in the Co content will influence the surface morphology by regulating the phase composition. Moreover, a relatively dense-surfaced Cu₂Se thin film can be obtained through Co doping. When the doping amount is 0.98 %, Co atoms exist in the form of a small number of interstitial defects, Co_i. When the doping amount increases to 2.38 %, a large number of Co_i are filled into the sub-lattice of the β-phase. This inhibits the formation of the α-phase and leads to the formation of a stable sub-lattice structure. As a result, it increases the hopping activation energy of carriers, enhances lattice coupling, and promotes acoustic phonon scattering. The magnetism of Co-doped Cu₂Se thin films is related to the quantity of Co_i. The small amount of Co_i can provide impurity energy levels, reduce the hopping activation energy of carriers, and generate ionized impurity scattering. Meanwhile, a small amount of Co_i gives rise to a built-in magnetic field in micro-regions, which restricts the migration of low-energy carriers in local regions. The relatively large effective mass makes the 0.98 %-Co film exhibit a relatively high Seebeck coefficient, effectively increasing the power factor of the film.</div></div>","PeriodicalId":18240,"journal":{"name":"Materials Science in Semiconductor Processing","volume":"202 ","pages":"Article 110116"},"PeriodicalIF":4.6,"publicationDate":"2025-10-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145322107","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Graphene nanoplatelet/α-Fe2O3 integrated carbon fiber based composites for electromagnetic interference shielding and microwave absorption","authors":"Rajib Barik,&nbsp;Ganeswar Nath","doi":"10.1016/j.mssp.2025.110157","DOIUrl":"10.1016/j.mssp.2025.110157","url":null,"abstract":"<div><div>In response to the rising demand for highly effective electromagnetic interference (EMI) shielding or microwave absorbing material, the study presents the development of a multifunctional epoxy based composite reinforced with chopped carbon fibers (CCF), graphene nanoplatelet (GNP) and hematite(α-Fe₂O₃). The fabrication approach, involving surface functionalization, solvent-assisted dispersion, and ultrasonication, enabled uniform filler integration and strong interfacial bonding. The hybrid architecture synergistically combines the high electrical conductivity of CCF, the interfacial polarization of GNP, and the magnetic characteristics of α-Fe₂O₃, thereby activating multiple attenuation mechanisms. Thermal analysis confirmed excellent thermal stability with a dominant decomposition transition at ∼550 °C, supporting its suitability for high-temperature electromagnetic applications. Among the formulations, the CF5G2.5F2.5 (epoxy 90 % + CCF 5 % + GNP 2.5 % + α-Fe₂O₃ 2.5 %) hybrid composite demonstrated electrical conductivity (0.76 Sm^-1 to 1.21 Sm^-1), skin depth (5.56 μm–3.76 μm), attenuation co-efficient (127.80 Npm⁻¹ to 276.17 Npm⁻¹), leading to result in superior microwave attenuation with a minimum reflection loss of −33.5 dB at 12.4 GHz, corresponding to &gt;99.9 % absorption and with an effective absorption bandwidth of ∼4.2 GHz at 3 mm thickness, along with a maximum shielding effectiveness of 44.81 dB. These properties were attributed to balanced dielectric and magnetic contributions, optimized impedance matching (≈0.95 at 12.4 GHz), and enhanced attenuation coefficients. The study also reveals that permittivity, permeability, can be precisely tailored through filler ratios to tune performance. The work underscores a scalable and customizable strategy for designing high performance EMI shielding and microwave absorbing materials, particularly suited for aerospace, defense, and next generation communication systems.</div></div>","PeriodicalId":18240,"journal":{"name":"Materials Science in Semiconductor Processing","volume":"202 ","pages":"Article 110157"},"PeriodicalIF":4.6,"publicationDate":"2025-10-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145322203","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Molecular dynamics simulation of AlGaN film deposition on GaN template: unraveling the roles of temperature and Al/Ga flux ratio in growth mechanism","authors":"Yunzhou Liu ,&nbsp;Shihan Xu ,&nbsp;Kang Zhang ,&nbsp;Hualong Wu ,&nbsp;Qiao Wang ,&nbsp;Qianguang Liao ,&nbsp;Dan Lin ,&nbsp;Ping Xu ,&nbsp;Jinhua Hu ,&nbsp;Pinghuan Zhuo ,&nbsp;Yelin Li ,&nbsp;Chenguang He","doi":"10.1016/j.mssp.2025.110163","DOIUrl":"10.1016/j.mssp.2025.110163","url":null,"abstract":"<div><div>AlGaN/GaN heterostructures are cornerstone materials for high-performance devices like High Electron Mobility Transistors (HEMTs), yet their fabrication remains largely empirical. A critical bottleneck is the lack of atomic-scale theoretical frameworks to clarify how deposition parameters tune key heterostructure properties—dislocation density, structural composition, surface roughness, in-plane stress—hindering the rational optimization of device quality. To fill this gap, we present a molecular dynamics (MD)-based atomic-scale investigation of AlGaN deposition on GaN templates, aiming to uncover the unelucidated mechanisms that quantify the correlative trends between such parameters and properties at the atomic level. Key findings include three fabrication-relevant insights: 1) For temperatures (1200–1800 K), we identified 1600 K as the optimal value, featuring peak crystalline quality and monotonic roughness reduction—driven by enhanced adatom mobility. Our work clarifies this mobility's synchronous regulation of the two key properties in systems like AlGaN/GaN heterostructures, offering new atomic-scale insights into their correlation. 2) For Al/Ga flux ratios (1:4 to 3:1), Al/Ga = 1:3 yields highest crystallinity; Al/Ga ≥1 surfaces are smoother than Al/Ga &lt;1. This divergence comes from clarified atomic process: Ga-rich conditions promote Ga desorption, while higher Al suppresses it—unhighlighted before. 3) We confirmed that in-plane tensile stress (arising from lattice mismatch) is dominant; further, our molecular dynamics (MD) simulations uniquely quantify how temperature and flux modulate the stress magnitude at the atomic interface. This work's innovation is translating atomic deposition dynamics into actionable AlGaN/GaN guidelines—addressing trial-and-error/theory disconnect. Findings guide parameter optimization, accelerating high-quality heterostructure synthesis for next-generation HEMTs.</div></div>","PeriodicalId":18240,"journal":{"name":"Materials Science in Semiconductor Processing","volume":"202 ","pages":"Article 110163"},"PeriodicalIF":4.6,"publicationDate":"2025-10-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145322205","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"An N-type JTE assisted field ring termination for 1200 V SiC MOSFET with increased reliability robustness","authors":"Mengyuan Yu ,&nbsp;Qingchun Jon Zhang","doi":"10.1016/j.mssp.2025.110162","DOIUrl":"10.1016/j.mssp.2025.110162","url":null,"abstract":"<div><div>Field limited ring (FLR) technique is widely used in silicon carbide (SiC) metal-oxide-semiconductor field-effect transistor (MOSFET) and junction barrier Schottky (JBS) edge termination design due to its easy to process and low fabrication cost. However, traditional FLR structure is very sensitive to surface charge variance during device operation, especially in reliability test, which will cause termination degradation. In this paper, an N-type junction termination extension (JTE) assisted FLR structure is proposed to solve the problem. Compared with traditional FLR termination, by adding an N-type JTE implantation, the electric field is alleviated under wide range of surface charge, thus significantly reduces the breakdown voltage (BV) sensitivity to surface charge. In addition, the new structure can also reduce electric field strength of field oxide in termination area, thus increases device robustness in humidity reliability test. Both TCAD simulation and experiment results show the proposed structure can effectively improve device reliability.</div></div>","PeriodicalId":18240,"journal":{"name":"Materials Science in Semiconductor Processing","volume":"202 ","pages":"Article 110162"},"PeriodicalIF":4.6,"publicationDate":"2025-10-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145322204","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Non-axis tilted texture and post-annealing imprint effects on the energy storage and ferroelectric properties of polycrystalline Bi2SiO5 thin films","authors":"Eunmi Lee ,&nbsp;Jong Yeog Son","doi":"10.1016/j.mssp.2025.110148","DOIUrl":"10.1016/j.mssp.2025.110148","url":null,"abstract":"<div><div>Layered-structure Bi₂SiO₅ consists of well-bonded Bi–O and Si–O layers and exhibits low leakage current and excellent anti-fatigue characteristics due to its low density of crystal defects and oxygen vacancies. In this study, we investigated the effect of crystallinity on the energy storage characteristics and ferroelectric properties of polycrystalline Bi₂SiO₅ thin films deposited on (111) Pt/TiO₂/SiO₂/Si substrates. The Bi₂SiO₅ thin films deposited at a high substrate temperature of 650 °C showed a highly <em>c</em>-axis tilted texture, whereas those deposited at a lower substrate temperature of 600 °C exhibited a predominantly non-<em>c</em>-axis tilted texture. Notably, films fabricated under a reduced deposition rate of nearly one-tenth at 600 °C revealed the most pronounced non-<em>c</em>-axis orientation. The as-deposited Bi₂SiO₅ thin films with non-<em>c</em>-axis tilted texture showed a relatively small remanent polarization of ∼6.5 μC/cm² and a relatively high saturation polarization of ∼67.1 μC/cm², resulting in a recoverable energy density of 48.1 J/cm³ with an efficiency of ∼87.8 %. Furthermore, the post-annealed Bi₂SiO₅ thin film exhibited an enhanced ferroelectric hysteresis loop imprinting, achieving a higher recoverable energy density of ∼52.1 J/cm³ and an energy storage efficiency of ∼88.7 %. These outcomes suggest that both crystallographic control and post-annealing imprinting can be effective strategies to improve the energy storage capability of Bi₂SiO₅ films while preserving their favorable leakage and fatigue resistance.</div></div>","PeriodicalId":18240,"journal":{"name":"Materials Science in Semiconductor Processing","volume":"202 ","pages":"Article 110148"},"PeriodicalIF":4.6,"publicationDate":"2025-10-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145322197","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Electronic and atomic structure-function relationships in smart window materials via X-ray spectroscopy","authors":"Arvind Chandrasekar ,&nbsp;Chi-Liang Chen ,&nbsp;Chung-Li Dong","doi":"10.1016/j.mssp.2025.110151","DOIUrl":"10.1016/j.mssp.2025.110151","url":null,"abstract":"<div><div>Smart window technologies, encompassing electrochromic, thermochromic, and gasochromic systems, hold immense potential for improving energy efficiency in buildings by dynamically controlling solar radiation and heat gain. Despite rapid advances in materials engineering, commercial viability is hindered by issues such as limited durability, sluggish switching, and poor spectral selectivity. Understanding the atomic- and electronic-scale mechanisms governing these limitations is critical for performance optimization. Synchrotron-based X-ray spectroscopies, particularly X-ray absorption spectroscopy (XAS), offer unparalleled insight into local electronic structure, coordination environment, and dynamic processes occurring during chromogenic transitions. This review critically evaluates the role of XAS and emerging techniques such as X-ray emission spectroscopy (XES), resonant inelastic X-ray scattering (RIXS), and scanning transmission X-ray microscopy (STXM) in deciphering structure-function relationships in smart window materials. By integrating recent in situ and operando studies, we highlight how X-ray spectroscopy accelerates the development of next-generation smart windows with enhanced stability, response time, and multifunctional capabilities, including hydrogen sensing. This work provides a forward-looking framework for tailoring chromogenic materials through atomic- and electronic-scale insights, ultimately enabling scalable deployment in energy-efficient architecture.</div></div>","PeriodicalId":18240,"journal":{"name":"Materials Science in Semiconductor Processing","volume":"202 ","pages":"Article 110151"},"PeriodicalIF":4.6,"publicationDate":"2025-10-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145322194","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Enhanced anisotropy in advanced semiconductor nanofabrication via ultralow electron temperature plasma for cryogenic etching","authors":"Min-Seok Kim,&nbsp;Jong Ha Ahn,&nbsp;Deok Hwan Kim,&nbsp;Seok Hyeon Ha,&nbsp;Chin-Wook Chung","doi":"10.1016/j.mssp.2025.110156","DOIUrl":"10.1016/j.mssp.2025.110156","url":null,"abstract":"<div><div>Cryogenic plasma etching enables the fabrication of high-aspect-ratio nanostructures, but its practical implementation is hindered by excessive plasma heat flux that necessitates extreme substrate cooling. Here, we demonstrate an ultralow electron temperature (ULET) plasma generated by a DC-biased grid in an inductively coupled plasma system, which effectively suppresses all major components of plasma heat flux. Compared to conventional plasmas, the electron temperature in ULET plasmas decreases by an order of magnitude, resulting in over 50 % reduction in substrate heating. Measurements of the ion energy distribution and substrate temperature reveal that high electron temperatures predominantly contribute to ion bombardment, UV radiation, and surface recombination heat flux. The lower plasma heat flux in ULET plasmas leads to enhanced etch anisotropy in high-aspect-ratio SiN/SiO₂/Si patterns, showing a sixfold improvement compared to conventional cryogenic plasma etching. Moreover, this high anisotropy is maintained even when the substrate temperature is increased by 100 K above typical cryogenic conditions. These results suggest that ULET plasmas enable energy-efficient, high-fidelity cryogenic etching, potentially reducing cooling costs while improving profile control for advanced semiconductor nanofabrication.</div></div>","PeriodicalId":18240,"journal":{"name":"Materials Science in Semiconductor Processing","volume":"202 ","pages":"Article 110156"},"PeriodicalIF":4.6,"publicationDate":"2025-10-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145322198","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"High-performance perovskite tandem architectures: Materials innovation, device engineering, and industrial prospects","authors":"K. Durga Devi ,&nbsp;V. Samuthira Pandi ,&nbsp;R. Sundar ,&nbsp;G. Vishnupriya","doi":"10.1016/j.mssp.2025.110149","DOIUrl":"10.1016/j.mssp.2025.110149","url":null,"abstract":"<div><div>Perovskite tandem solar cells have emerged as the most promising pathway to surpass fundamental single-junction efficiency limitations, achieving certified efficiencies exceeding 31 % through enhanced spectral utilization and voltage addition mechanisms. This comprehensive review examines the rapid evolution from proof-of-concept demonstrations to commercial readiness across all tandem architectures. We systematically analyze all-perovskite tandems utilizing wide-bandgap (1.6–1.8 eV) and narrow-bandgap (1.1–1.4 eV) subcells achieving 30.1 % efficiency, perovskite/silicon combinations reaching 31.25 % through industrial platform integration, and alternative configurations including perovskite/organic and perovskite/chalcogenide systems. Critical technical challenges including current matching optimization, Sn-Pb oxidation prevention, and manufacturing scalability are addressed through advanced materials engineering and processing innovations. Commercial deployment prospects reveal compelling advantages including 25–30 % higher efficiency enabling 15–20 % lower levelized energy costs.</div></div>","PeriodicalId":18240,"journal":{"name":"Materials Science in Semiconductor Processing","volume":"202 ","pages":"Article 110149"},"PeriodicalIF":4.6,"publicationDate":"2025-10-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145322195","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Joining of lotus-type porous copper to alumina substrate by direct bonded copper technique","authors":"Sang-Gyu Choi ,&nbsp;Sangwook Kim ,&nbsp;Jinkwan Lee ,&nbsp;Keun-Soo Kim ,&nbsp;Soongkeun Hyun","doi":"10.1016/j.mssp.2025.110137","DOIUrl":"10.1016/j.mssp.2025.110137","url":null,"abstract":"<div><div>This study investigates the Direct Bonded Copper (DBC) process using lotus copper, a unidirectional porous material, for direct bonding to alumina ceramic substrates. Lotus copper is fabricated via a continuous casting process in a hydrogen-nitrogen atmosphere. When using the conventional DBC method, the lotus structure tends to collapse due to excessive molten copper flow driven by high surface tension. Therefore, a modified DBC bonding process was specifically designed for lotus copper, as the conventional approach proved unsuitable. A key aspect of successful DBC bonding is the reaction between molten copper and alumina surface to form an intimate interfacial bond. By controlling the oxidation rate on the surface of the lotus copper, the mobility of molten copper should be limited to satisfy the conditions for reaction and bonding with alumina. A redesigned DBC process was implemented, and bonding experiments were conducted under various time conditions. Under the integrated DBC process, the bonded DBC specimens retained the morphology of lotus copper. The shear strength evaluation of the bonding interface confirmed that lotus copper could be successfully joined to the alumina substrate even without a separate oxidation pretreatment step. This demonstrates the potential applicability of the porous copper structure in advanced ceramic–metal joining applications.</div></div>","PeriodicalId":18240,"journal":{"name":"Materials Science in Semiconductor Processing","volume":"202 ","pages":"Article 110137"},"PeriodicalIF":4.6,"publicationDate":"2025-10-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145322200","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}