Materials Science in Semiconductor Processing最新文献

{"title":"The evolution mechanism of femtosecond laser-induced periodic structure on monocrystalline silicon with scanning rate and the associated material rearrangement process","authors":"Xuefei Liu ,&nbsp;Chuanzhen Huang ,&nbsp;Hanlian Liu ,&nbsp;Dun Liu ,&nbsp;Peng Yao ,&nbsp;Bin Zou ,&nbsp;Hongtao Zhu ,&nbsp;Zhen Wang ,&nbsp;Longhua Xu ,&nbsp;Shuiquan Huang","doi":"10.1016/j.mssp.2025.109714","DOIUrl":"10.1016/j.mssp.2025.109714","url":null,"abstract":"<div><div>Laser-induced periodic surface structures (LIPSS) are a unique phenomenon with widespread applications in areas such as anti-reflection coatings, data storage, and more. However, the material rearrangement mechanism during LIPSS formation has not been fully revealed. In this study, on monocrystalline silicon, femtosecond laser-induced two-row grains in a period of approximately 800 nm at an accumulated fluence (the product of fluence and pulse number, <em>F</em>_<em>a</em>) ranging from 17 to 23J/cm², corresponding to a laser scanning rate of 600–800 μm/s, were observed through atomic force microscope (AFM), a phenomenon that has rarely been reported in previous studies. At larger <em>F</em>_<em>a</em> (lower scanning rates), low spatial frequency LIPSS (LSFL) with a period of approximately 650 nm was observed. X-ray diffraction (XRD) and X-ray photoelectron spectroscopy (XPS) were employed to analyze the composition of the structures, revealing that the grains are monocrystalline silicon with the same crystallographic orientation as the underlying silicon substrate. It is revealed that on monocrystalline silicon, LIPSS forms through the merge of two rows of grains in the initial stage with grains from adjacent cycles. This study offers a detailed examination of the material rearrangement process during LIPSS formation under the interference of the laser and surface plasmons (SPs). It also explains why the interior of LIPSS on monocrystalline silicon consists of regularly arranged crystals. This study provides new insight into understanding how LIPSS on monocrystalline silicon emerge through material rearrangement under laser-SPs interference.</div></div>","PeriodicalId":18240,"journal":{"name":"Materials Science in Semiconductor Processing","volume":"197 ","pages":"Article 109714"},"PeriodicalIF":4.2,"publicationDate":"2025-05-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144177518","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Structural, computational, and electrochemical analysis of SnS2 embedded g-C3N4/In2O3 heterostructures for photocatalytic decontamination of water pollutants","authors":"Monika Kumari ,&nbsp;Naveen Kumar ,&nbsp;Raj Kishore Sharma ,&nbsp;Seshibe Makgato ,&nbsp;Muhammad Tahir ,&nbsp;Jogender ,&nbsp;Ashish Kumari","doi":"10.1016/j.mssp.2025.109658","DOIUrl":"10.1016/j.mssp.2025.109658","url":null,"abstract":"<div><div>Visible light active and high-performance photocatalysts development is a keen area of interest for the researchers. g-C₃N₄ being an eco-friendly photocatalyst and to improve its photocatalytic performance and we engineered a novel type II g-C₃N₄/In₂O₃/SnS₂ composite photocatalyst through a strategic combination of precipitation and heating methods. The prepared photocatalysts were characterized for their chemical structure, morphology, light absorption properties, and elemental composition. The resulting ternary composites demonstrated superior visible light utilization and enhanced charge transfer capabilities due to the formation of heterojunctions, which facilitated electron movement. Further, Density Functional Theory (DFT) studies also confirmed that ternary composites have the highest binding energy with the strongest overlapping of density of states (DOSs), which is best for photocatalytic applications. The photocatalytic performance was evaluated by testing the photodegradation of two organic pollutants: the antibiotic ciprofloxacin (CP) and the cationic dye Rhodamine B (RhB). The results showed that the optimal composite achieved approximately 99.77 % degradation of RhB within 100 min and 99.44 % degradation of CP in 180 min. Both pollutants exhibited maximum degradation at pH 7. Scavenger studies revealed that holes were the primary agents in the degradation of RhB, while both holes and superoxide radicals contributed significantly to the degradation of CP. Additionally, electrochemical analyses indicated an increase in donor density and a reduction in charge resistance after composite formation, further enhancing photocatalytic efficiency. The present report highlights the potential of developed g-C₃N₄/In₂O₃/SnS₂ photocatalysts for cost-effective applications in environmental remediation.</div></div>","PeriodicalId":18240,"journal":{"name":"Materials Science in Semiconductor Processing","volume":"197 ","pages":"Article 109658"},"PeriodicalIF":4.2,"publicationDate":"2025-05-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144170202","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Inhibition on the growth of interfacial IMCs in Sn-15Bi molten solder with Ni or Co substrate under temperature gradient","authors":"Han Yan,&nbsp;Fengjiang Wang","doi":"10.1016/j.mssp.2025.109729","DOIUrl":"10.1016/j.mssp.2025.109729","url":null,"abstract":"<div><div>We reported to use different substrate pad to suppress the atomic migration and the growth of interfacial intermetallic compounds (IMCs) in Sn-15Bi molten solder joints under thermomigration, and investigated the thermomigration behaviors with copper as cold substrate but altering the hot substrate with copper, cobalt or nickel. A fin structure on Cu cold substrate was designed to magnify the thermomigration in solder matrix. Finite element simulation showed that Cu hot substrate exhibited the largest temperature gradient compared with Ni and Co. Under the combined effect from temperature gradient and chemical potential, more substrate atoms diffused through molten Sn-15Bi and enrolled into the interfacial reaction. Compared with the interfacial Cu₆Sn₅/Cu₃Sn IMCs in Cu/Sn-15Bi/Cu joints, (Cu,Ni)₆Sn₅ was observed at the interface in joints with Ni hot substrate, and (Cu,Co)₆Sn₅/(Co,Cu)Sn₃ were at the interface in joints with Co hot substrate. The thermomigration promoted the asymmetrical IMCs' growth in joints with the hot substrate of Cu or Ni, but compared with Cu hot substrate, Ni hot substrate can obviously retard the thermomigration induced interfacial IMCs' growth on the cold substrate. In Cu/Sn-15Bi/Co, the interfacial asymmetrical IMCs’ growth at the cold substrate was completely suppressed with fast growth of Cu-Co-Sn IMCs at the hot Co substrate because of the slow diffusivity of Co in Sn compared with Cu or Ni in Sn. Co substrate provides better thermomigration resistance than Cu or Ni.</div></div>","PeriodicalId":18240,"journal":{"name":"Materials Science in Semiconductor Processing","volume":"197 ","pages":"Article 109729"},"PeriodicalIF":4.2,"publicationDate":"2025-05-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144170204","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Theoretical investigation of structural and elastic properties of Ag2SiS3 chalcogenide","authors":"Maryam Azizi,&nbsp;Hamdollah Salehi","doi":"10.1016/j.mssp.2025.109701","DOIUrl":"10.1016/j.mssp.2025.109701","url":null,"abstract":"<div><div>In this work, density functional theory was used to study the structural and elastic properties, cohesion energy, and formation energy of the Ag₂SiS₃ ternary chalcogenide compound. The calculations were performed using the norm-conserving and ultra-soft charge pseudo-potential in GGA and LDA approximations. The negativity of the measured value of cohesion and formation energy indicates the stability of the compound. At the E-Γ point, an indirect band gap with the sizes LDA + US = 1.17eV, GGA + US = 1.29 eV, and GGA + NC = 1.24 eV was obtained. Important characteristics of the elastic properties were studied, including anisotropy, bulk B, Young's modulus E, shear modulus G, minimum thermal conductivity (k_min), Cauchy pressure (P_C), Grüneisen parameter (γ), Poisson's ratio (ʋ), Debye temperature (θ_D), and melting temperature T_melt. From examining P_C, G/B, and ʋ, we found that the composition is ductile, and there are also ionic bonds between atoms. V was checked in (100), (010), and (001) directions; the value of V was different in these directions (V_l was greater than V_t in all directions), which indicates sound anisotropy. The θ_D value in this combination, LDA + US = 203.6 K, GGA + US = 217.54 K, and GGA-NC = 191.89 K, and the T_melt(±300K) value in LDA + US = 701.445 K, GGA + US = 644.85 K, and GGA-NC = 584.25 K, were obtained. The values obtained of K_min in the Clarke (Cahill) model have various amounts in different directions, and these values indicate the anisotropy of K_min. The values of K_min in the direction 100 in the Clark model are GGA-NC = 0.036 (W/mK), GGA-US = 0.042, and LDA-US = 0.043. After examining the properties of the Ag₂SiS₃ compound, we found that it is ductile, resistant, with good machinability, completely anisotropic, has strong atomic bonds, and is particularly stable. Given its properties, it is perfectly suitable for manufacturing and use in industry.</div></div>","PeriodicalId":18240,"journal":{"name":"Materials Science in Semiconductor Processing","volume":"197 ","pages":"Article 109701"},"PeriodicalIF":4.2,"publicationDate":"2025-05-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144170206","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Impact of TiO2 on performance and thermal characteristics of bifacial solar modules: A computational and experimental approach","authors":"Myeongji Woo ,&nbsp;MyeongSeob Sim ,&nbsp;Ji Woo Sohn ,&nbsp;Sol Choi ,&nbsp;Dowon Pyun ,&nbsp;Dongjin Choi ,&nbsp;Donghwan Kim ,&nbsp;Hae-Seok Lee ,&nbsp;Yoonmook Kang","doi":"10.1016/j.mssp.2025.109707","DOIUrl":"10.1016/j.mssp.2025.109707","url":null,"abstract":"<div><div>Temperature-induced efficiency degradation poses a persistent challenge for silicon photovoltaic (PV) modules, especially under high-irradiance conditions. Radiative cooling has recently gained attention as a promising passive strategy for thermal management without additional energy input. In this study, TiO₂ thin films were applied as radiative cooling layers on silicon modules, and their thermal behavior was systematically analyzed through the finite difference method (FDM). The calculation results revealed temperature reductions of 2.3 °C and 4.0 °C for 10 nm and 50 nm TiO₂ layers, respectively, driven by both enhanced radiative emission and optical reflection losses. These two effects were independently evaluated to identify the optimal layer thickness. To validate the calculation results, outdoor experiments were conducted using modules integrated with TiO₂ coatings. A temperature drop of 0.9 °C was observed under real-world conditions, accompanied by an 11 %p energy yield in the module stage. This work demonstrates that integrating a thin TiO₂ layer offers a practical and scalable approach to suppress thermal stress in silicon PV modules, ultimately contributing to improved energy yield and long-term stability.</div></div>","PeriodicalId":18240,"journal":{"name":"Materials Science in Semiconductor Processing","volume":"197 ","pages":"Article 109707"},"PeriodicalIF":4.2,"publicationDate":"2025-05-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144170203","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Modifying interface properties for advanced self-powered refractory NIR plasmonic photodetection and broadband spectroscopy","authors":"Eslam Abubakr ,&nbsp;Ashenafi Abadi ,&nbsp;Shiro Saito ,&nbsp;Hironori Suzuki ,&nbsp;Tetsuo Kan","doi":"10.1016/j.mssp.2025.109712","DOIUrl":"10.1016/j.mssp.2025.109712","url":null,"abstract":"<div><div>Using a single tunable device, this study demonstrated an adequate broadband filter-free spectroscopy in the near-infrared range by combining the plasmonic properties of Au with the interface characteristics of a Schottky junction. Integrating Mo as the Schottky metal in plasmonic detectors enhances device adhesion and long-term stability, delivering consistent performance for over a year. Moreover, it shifts the Fermi level, lowering the barrier height to 0.68 eV, which is optimum for an intermediate operating in the NIR spectrum and improves responsivity to longer wavelengths. Combined with an embedded grating achieved by grooving the Si surface, it enabled 3D hot-electron injection at three interfaces, leading to excellent responsivity and spectral selectivity supported by wavelength-specific detection, as well as enhanced spatial resolution. The photodetector extends the detection range to 1900 nm, thereby increasing NIR sensitivity and enabling more accurate spectral reconstruction at longer wavelengths beyond Si bandgap limitations. The device self-operates sustainably at room temperature and zero bias conditions, demonstrating ultra-fast switching capabilities of 25 μs and a measured sensitivity exceeding −60 dB m. This extended range shows excellent potential for reliable compound identification, leveraging the distinct absorbance properties of molecular bonds. Scaling down infrared spectroscopy to a chip-level design further enhances the device's adaptability for environmental monitoring and gas detection applications.</div></div>","PeriodicalId":18240,"journal":{"name":"Materials Science in Semiconductor Processing","volume":"197 ","pages":"Article 109712"},"PeriodicalIF":4.2,"publicationDate":"2025-05-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144170201","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Investigations of SiC doping effects on the performance improvement of ZnO-based RRAMs at extremely temperature","authors":"Ting-Jui Wang,&nbsp;Cheng-Ying Li,&nbsp;Po-An Shih,&nbsp;Wei-Chueh Cheng,&nbsp;Kuan-Lin Yeh,&nbsp;Jai-Hao Wang,&nbsp;Sheng-Yuan Chu","doi":"10.1016/j.mssp.2025.109717","DOIUrl":"10.1016/j.mssp.2025.109717","url":null,"abstract":"<div><div>In this work, using a co-sputtering system, SiC was doped with ZnO: Li (LZO) at a Li concentration of 3 mol%. A bipolar resistive random-access memory (RRAM) with TiN/LZO: SiC/Pt structure for extreme temperatures was fabricated by forming new chemical bonds. Its application temperature range is 473 K–77 K, and due to the Si-O-C chemical bond, it has successfully improved the problems of low durability, low on-off ratio, and low thermal stability of ZnO-based RRAM. The disadvantages of TiN/LZO: SiC/Pt RRAM were successfully improved. The durability has been increased from 100 to 1088 DC cycles, and the retention has reached 105 S, while the switching ratio has been increased from 15 to 450. The proposed devices have been successfully operated at an extremely high temperature of 473 K (200 °C), with a life of over 100 DC cycles and an on/off ratio of over 500. This demonstrates excellent high-temperature stability compared to other devices. In addition, low-temperature measurements show that the devices can operate at the operating temperature of a quantum topology computer at 77 K for more than 100 DC cycles, and the on/off ratio was over 200, which has extreme potential for quantum applications.</div></div>","PeriodicalId":18240,"journal":{"name":"Materials Science in Semiconductor Processing","volume":"197 ","pages":"Article 109717"},"PeriodicalIF":4.2,"publicationDate":"2025-05-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144155016","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Engineering the role of oxygen vacancies in photocatalysts for environmental remediation and energy conversion applications: A comprehensive review","authors":"V.C. Antony Ajin,&nbsp;A. Jestin Lenus","doi":"10.1016/j.mssp.2025.109705","DOIUrl":"10.1016/j.mssp.2025.109705","url":null,"abstract":"<div><div>Photocatalysis is often regarded as the most significant technology for mitigating global energy and environmental challenges. In particular, semiconductor-based photocatalysts have drawn more interest as a way to get beyond the constraints of the current conventional techniques. These photocatalytic materials continue to suffer from high recombination rates, poor light absorption, stability, and durability, which limit their commercial viability. Several strategies are used to address these problems. Among them, creating oxygen vacancies (OVs) in photocatalytic materials by defect engineering has been appeared as a cost-effective Eg-narrowing strategy for increasing visible light absorption and separating and transferring charge carriers without recombination. The idea of OVs in a photocatalyst and their purposes are highlighted in this review. In addition, it discusses the many methods for effectively producing OVs in a material to improve process efficiency. Additionally, it covers the certain detection techniques to verify the existence of oxygen vacancies in a specific material. Besides, the utilization of OVs in pollution degradation, hydrogen production, CO₂ reduction, and N₂ fixation are outlined to offer potential research direction to address the environmental issues.</div></div>","PeriodicalId":18240,"journal":{"name":"Materials Science in Semiconductor Processing","volume":"197 ","pages":"Article 109705"},"PeriodicalIF":4.2,"publicationDate":"2025-05-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144155163","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"LaTaON2 insights, from synthesis to photocatalytic and photoelectrochemical applications; a review","authors":"Sara Alvarez-Sosa ,&nbsp;J. Manuel Mora-Hernandez ,&nbsp;Leticia M. Torres-Martínez","doi":"10.1016/j.mssp.2025.109720","DOIUrl":"10.1016/j.mssp.2025.109720","url":null,"abstract":"<div><div>Research surrounding new photocatalytic materials is an area of continuous growth, especially in the development of light-harvesting semiconductors capable of absorbing irradiation in the visible-light range to carry out diverse photocatalytic processes such as the water-splitting reaction, decontamination of dyes and drugs present in water, and CO₂ and NO_X photoreduction. Advanced materials such as oxynitrides have emerged in recent years due to their interesting properties and diverse applications; however, their physicochemical properties and relation with optical and photocatalytic applications are still an emerging study area, which has revealed oxynitrides are photoactive materials capable of performing the above-mentioned reactions. Among this group, the perovskite oxynitride LaTaON₂ is one of the more recent and less studied materials. The global literature is limited to less than 40 research articles, which makes this material worth studying since it has gained attention as a promising photocatalyst for water-splitting reactions despite the scarcity of studies in the literature. Therefore, this review aims to collect and analyze the available information on LaTaON₂, highlighting its synthesis methods, uses, applications, and photocatalytic enhancement strategies to facilitate future advancements and applications of the mentioned material for energy generation and environmental remediation.</div></div>","PeriodicalId":18240,"journal":{"name":"Materials Science in Semiconductor Processing","volume":"197 ","pages":"Article 109720"},"PeriodicalIF":4.2,"publicationDate":"2025-05-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144155164","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Computational study on the electronic structure, phonon, dynamic, thermal, and optical properties of XTe (X = Ga, Ge and GaGe) monolayers","authors":"Nzar Rauf Abdullah ,&nbsp;Botan Jawdat Abdullah ,&nbsp;Vidar Gudmundsson","doi":"10.1016/j.mssp.2025.109666","DOIUrl":"10.1016/j.mssp.2025.109666","url":null,"abstract":"<div><div>We perform an extensive investigation of two-dimensional, 2D, semiconductor structures consisting of hexagonal XTe (where X is Ga, Ge, or GaGe). The <span><math><mi>h</mi></math></span>-XTe have naturally planar buckling which effectively influences their physical properties. The buckling values of GaTe and GaGeTe are equal, and it is smaller than the buckling of GeTe. AIMD simulations confirm that the structure with lower buckling is more thermally stable than the higher buckled one and the phonon dispersion indicates all three considered monolayers are dynamically stable. A monolayer with higher buckling has stronger covalent interactions compared to lower buckled monolayers, and it thus induces stronger localization of electronic states, which often results in a larger band gap. This difference in the band gap due to planar buckling influences thermoelectric properties such as the Seebeck coefficient, and the power factor at the low temperature regime. On the other hand in the high temperature regime, a highly buckled structure exhibits low thermal properties such as heat capacity due to degenerate phonon bands. The optical properties reveal that all three monolayers primarily absorb in the IF region around the Fermi energy, while strong peaks in the optical conductivity are seen arising from absorption in the visible light region. A higher plasmon frequency is found for lower buckled monolayers compared to the more buckled ones. The XTe monolayers are exceptional promising for advanced applications in optoelectronics, plasmonics, and thermoelectrics, particularly when incorporated into nanodevices.</div></div>","PeriodicalId":18240,"journal":{"name":"Materials Science in Semiconductor Processing","volume":"197 ","pages":"Article 109666"},"PeriodicalIF":4.2,"publicationDate":"2025-05-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144155015","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}