Materials Science in Semiconductor Processing最新文献

{"title":"Constructing Z-scheme CoIn2S4/BiOBr heterostructures for efficient photocatalytic degradation of tetracycline hydrochloride","authors":"Xiaoya Shangguan,&nbsp;Kehan Zhou,&nbsp;Lishang Liu","doi":"10.1016/j.mssp.2025.109549","DOIUrl":"10.1016/j.mssp.2025.109549","url":null,"abstract":"<div><div>In this work, the novel composite CoIn₂S₄/BiOBr was synthesized by a combination of hydrothermal and solvothermal methods. The degradation efficiency of tetracycline hydrochloride (TCH) was used as an index to assess the photodegradation efficiency of the synthesized novel complex catalysts. We investigated the effect of the content of CoIn₂S₄ on the catalytic efficiency of the complex. Ultimately, we obtained the best catalytic performance of CoIn₂S₄/BiOBr at 5 wt%. Subsequently, we characterized the material in a variety of physical phases, and the material also showed excellent stability in the cycling test session. Finally, we revealed the Z-scheme photocatalytic mechanism by electron spin resonance (ESR) technique and radical trapping experiments.</div></div>","PeriodicalId":18240,"journal":{"name":"Materials Science in Semiconductor Processing","volume":"194 ","pages":"Article 109549"},"PeriodicalIF":4.2,"publicationDate":"2025-04-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143824519","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Enhancing solar cell performance through controllable perovskite crystallization via water additive in DMF","authors":"Wen-Ying Yu ,&nbsp;Thangaraji Vasudevan ,&nbsp;Praveenkumar Subramani,&nbsp;Lung-Chien Chen","doi":"10.1016/j.mssp.2025.109560","DOIUrl":"10.1016/j.mssp.2025.109560","url":null,"abstract":"<div><div>Achieving long-term stability under standard ambient conditions remains a major obstacle for perovskite solar cells (PSCs), as exposure to moisture often compromises their structure despite significant advancements in efficiency. This study demonstrates an efficient strategy to enhance the crystallization and stability of perovskites (CsFAMAPbX₃) by introducing water as an additive throughout crystallization. Incorporating H₂O into N, N-dimethylformamide (DMF) enables controlled crystallization, as water's lower boiling point and higher vapor pressure regulate solvent evaporation and film formation. The XRD and SEM analyses of the 3 % H₂O samples show large crystalline sizes, well-formed grains, and smooth surfaces, indicating a significant reduction in defects within the perovskite material. Hence, the optimized solar cells reach a power conversion efficiency (PCE) of 20.5 % and maintain 85 % of their original performance after seven days of exposure to air, demonstrating significantly enhanced ambient stability. These findings propose a viable strategy for fine-tuning crystal growth processes, offering a pathway to increase both the efficiency and durability of organic-inorganic halide PSC.</div></div>","PeriodicalId":18240,"journal":{"name":"Materials Science in Semiconductor Processing","volume":"194 ","pages":"Article 109560"},"PeriodicalIF":4.2,"publicationDate":"2025-04-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143824520","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Study on the photocatalytic performance of photocatalytic fixed polishing plate and its effect on the polishing performance of single-crystal SiC","authors":"Chen Lin ,&nbsp;Jilong Xie ,&nbsp;Jiabin Lu ,&nbsp;Qiusheng Yan","doi":"10.1016/j.mssp.2025.109556","DOIUrl":"10.1016/j.mssp.2025.109556","url":null,"abstract":"<div><div>To efficiently polish single-crystal silicon carbide (SiC), an Ultraviolet photocatalytic (UV-PC) fixed polishing plate containing TiO₂ was developed. The influence of UV-PC parameters on the concentration of hydroxyl radicals (·OH) and the polishing performance of SiC was studied. The influence of photocatalytic parameters, including TiO₂ mass fraction, H₂O₂ mass fraction, and light intensity, on the concentration of ·OH was investigated using a spectrophotometric system. Based on this, the polishing experiment was conducted on single-crystal SiC. Results show that material removal rate (MRR) and ·OH concentration were significantly correlated. As the mass fraction of TiO₂, mass fraction of H₂O₂, and light intensity increase, the concentration of ·OH radicals initially rises before declining, while the MRR of SiC initially increases before decreasing. Conversely, the surface roughness Ra of SiC exhibits first decreases before increasing. Under the conditions of 10 wt% TiO₂, 10 wt% H₂O₂, and light intensity of 40 mW/cm², the concentration of ·OH was highest, leading to the most significant fading of the methyl orange (MO) solution. Within 40 min, the degradation rate of the MO solution reached 99.3 %. At this time, the MRR of SiC was highest, reaching 4.05 μm/h, and the surface roughness Ra was lowest, at 1.09 nm. Compared to conventional methods without UV-PC processing, the MRR of SiC processed by UV-PC fixed polishing plate is significantly increased by 73.1 %, and peak-valley (PV) value and surface roughness are reduced by 58.1 % and 45.8 %, respectively. These research findings offer essential reference values for developing visible light-assisted SiC chemical mechanical polishing technology.</div></div>","PeriodicalId":18240,"journal":{"name":"Materials Science in Semiconductor Processing","volume":"194 ","pages":"Article 109556"},"PeriodicalIF":4.2,"publicationDate":"2025-04-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143821119","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Metal nitrides as an alternative material for SERS platforms: TiN and beyond","authors":"Libor Nozka ,&nbsp;Robert Ambroziak ,&nbsp;Jan Krajczewski","doi":"10.1016/j.mssp.2025.109555","DOIUrl":"10.1016/j.mssp.2025.109555","url":null,"abstract":"<div><div>Currently, SERS spectroscopy is one of the most sensitive analytical techniques. The method is rapid, accurate, and non-destructive, relying on plasmonic nanostructures at its core. To date, the literature has been dominated by SERS platforms based on plasmonic metals, primarily gold and silver. The optical properties and applications of noble metal nanoparticles in SERS spectroscopy have been studied in depth for over 40 years. As a result, the potential of well-established noble metal plasmonic nanostructures is nearing its limit. Despite decades of development, the main challenge remains the design and production of highly efficient and reliable plasmonic substrates suitable for SERS. A high-quality SERS platform should provide a stable enhancement factor (EF) across the entire substrate (point-to-point uniformity) and between different substrates (sample-to-sample reproducibility), while also exhibiting high chemical and temporal stability. For potential biomedical and biological applications, a novel SERS platform must exhibit low cytotoxicity and good biocompatibility.</div><div>Therefore, the synthesis of novel, metal-free plasmonic nanomaterials continues to be an area of active research. One of the most promising materials is metal nitrides. Recent literature has demonstrated the formation of metal nitride-based SERS platforms with activity comparable to, or even surpassing, that of standard platforms based on noble metals. In this review, we describe the current state of the art and the prospects for applying metal nitride-based nanomaterials as SERS platforms.</div></div>","PeriodicalId":18240,"journal":{"name":"Materials Science in Semiconductor Processing","volume":"194 ","pages":"Article 109555"},"PeriodicalIF":4.2,"publicationDate":"2025-04-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143820406","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Synthesis of CdSe/CISe core-shell structured quantum dots using seed growth method and their photovoltaic applications","authors":"Xiaowei Zhao ,&nbsp;Hui Zhang ,&nbsp;Xinjian Xie ,&nbsp;Yi Fang ,&nbsp;Guifeng Chen","doi":"10.1016/j.mssp.2025.109561","DOIUrl":"10.1016/j.mssp.2025.109561","url":null,"abstract":"<div><div>Quantum dots of I-III-VI ternary compounds, such as CuInSe₂(CISe) and CuInS₂(CIS), have great potential as light absorbing materials in solar cells due to their excellent optoelectronic properties. However, their performance is often hindered by many surface defects. In this study, environmentally friendly inverted CdSe/CISe core-shell quantum dots were successfully synthesized by thermal injection using triethylene glycol as a green solvent. Using XRD, UV Vis spectroscopy TEM, Raman spectroscopy, EDS, and fluorescence spectroscopy were used to comprehensively characterize the structure and optical properties of the synthesized core-shell quantum dots. A solar cell with FTO/TiO₂/ZnS/CdSe/CISe/Mo structure was assembled using CdSe/CISe core-shell quantum dots as the light absorbing layer. The device efficiency using CdSe/CISe core-shell quantum dots under AM 1.5G solar spectrum and 100 mW cm⁻²illumination is 0.84 %, an increase of 0.36 % compared to single component CISe quantum dots.</div></div>","PeriodicalId":18240,"journal":{"name":"Materials Science in Semiconductor Processing","volume":"194 ","pages":"Article 109561"},"PeriodicalIF":4.2,"publicationDate":"2025-04-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143821118","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Development of flat monoclinic Sm2O3 films by sputtering and post-deposition annealing for solar cell applications","authors":"Tomoaki Yazaki ,&nbsp;Shin Kunieda ,&nbsp;Keisuke Arimoto ,&nbsp;Junji Yamanaka ,&nbsp;Kosuke O. Hara","doi":"10.1016/j.mssp.2025.109514","DOIUrl":"10.1016/j.mssp.2025.109514","url":null,"abstract":"<div><div>Monoclinic Sm<span><math><msub><mrow></mrow><mrow><mn>2</mn></mrow></msub></math></span>O<span><math><msub><mrow></mrow><mrow><mn>3</mn></mrow></msub></math></span> is a promising material for the electron transport layer in double-heterojunction BaSi<span><math><msub><mrow></mrow><mrow><mn>2</mn></mrow></msub></math></span> solar cells. This study aims to develop a technique for fabricating flat monoclinic Sm<span><math><msub><mrow></mrow><mrow><mn>2</mn></mrow></msub></math></span>O<span><math><msub><mrow></mrow><mrow><mn>3</mn></mrow></msub></math></span> films through systematic investigation of the structural evolution during radio-frequency magnetron sputtering and post-deposition annealing. On synthetic quartz glass substrates, monoclinic Sm<span><math><msub><mrow></mrow><mrow><mn>2</mn></mrow></msub></math></span>O<span><math><msub><mrow></mrow><mrow><mn>3</mn></mrow></msub></math></span> was successfully formed after annealing in Ar at 200–900 <span><math><mrow><mo>°</mo><mi>C</mi></mrow></math></span> for 10 min. In contrast, Sm_9.33(SiO₄)<span><math><msub><mrow></mrow><mrow><mn>6</mn></mrow></msub></math></span>O<span><math><msub><mrow></mrow><mrow><mn>2</mn></mrow></msub></math></span> formed on Si substrates after annealing at 700–1100 <span><math><mrow><mo>°</mo><mi>C</mi></mrow></math></span>, accompanied by Si hillocks that increased surface roughness. X-ray photoelectron spectroscopy revealed excess oxygen in the as-deposited films, which triggered chemical reactions between the oxygen-rich Sm oxide and the Si substrate, leading to Sm_9.33(SiO₄)<span><math><msub><mrow></mrow><mrow><mn>6</mn></mrow></msub></math></span>O<span><math><msub><mrow></mrow><mrow><mn>2</mn></mrow></msub></math></span> formation. Annealing in reducing atmospheres effectively suppressed these reactions, enabling the formation of flat monoclinic Sm<span><math><msub><mrow></mrow><mrow><mn>2</mn></mrow></msub></math></span>O<span><math><msub><mrow></mrow><mrow><mn>3</mn></mrow></msub></math></span> films. Furthermore, we investigated the mechanism of monoclinic phase formation, confirming that it is independent of surface oxide effects and short annealing durations (10 min). These findings contribute to the advancement of BaSi<span><math><msub><mrow></mrow><mrow><mn>2</mn></mrow></msub></math></span> solar cell technology by enabling the fabrication of high-quality electron transport layers.</div></div>","PeriodicalId":18240,"journal":{"name":"Materials Science in Semiconductor Processing","volume":"194 ","pages":"Article 109514"},"PeriodicalIF":4.2,"publicationDate":"2025-04-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143815372","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"High-performance Sn-doped Ga2O3 FETs by co-sputtering: Depletion mode versus enhancement mode","authors":"Zi Chun Liu ,&nbsp;Yang Hui Xia ,&nbsp;De Dai ,&nbsp;Jia Cheng Li ,&nbsp;Hui Xia Yang ,&nbsp;Yi Yun Zhang ,&nbsp;Yuan Xiao Ma ,&nbsp;Ye Liang Wang","doi":"10.1016/j.mssp.2025.109552","DOIUrl":"10.1016/j.mssp.2025.109552","url":null,"abstract":"<div><div>High-performance Sn-doped gallium oxide (Ga₂O₃) films were deposited on Si/SiO₂ substrates to fabricate field-effect transistors (FETs) via room-temperature co-sputtering. The performances of the SiO₂-supported FETs were optimized by varying the co-sputtering power of Sn to demonstrate a large on-state current (<em>I</em>_ON) of 2.5 mA/mm and a high on/off ratio of over 10⁶. However, it is accompanied by a normally-on behavior with a negative threshold voltage (<em>V</em>_TH), namely depletion mode (d-mode). Importantly, this d-mode can be converted to enhancement mode (e-mode) by adopting high-k Ta₂O₅/pristine Ga₂O₃ dielectrics, and extra nitrogen (N) doping in the Sn-doped Ga₂O₃ channels. Finally, the performances of the e-mode FETs with high-k dielectrics can be promoted via a Sn-doped Ga₂O₃/(Sn, N)-doped Ga₂O₃ dual-layer channel structure, which presents a large <em>I</em>_ON over 2 mA/mm, a high on/off ratio exceeding 10⁷, and a small <em>V</em>_TH below 5 V. Furthermore, the FET with dual-layer channel shows excellent stability, which is reflected by the bias stress measurement and stable performances after 3-month exposure to air. This remarkably-improved performance is attributed to the enhanced field effect by the high-k dielectrics, and the dual-layer channel structure that possesses both high stability of the (Sn, N)-doped layer and high current capability of the Sn-doped layer.</div></div>","PeriodicalId":18240,"journal":{"name":"Materials Science in Semiconductor Processing","volume":"194 ","pages":"Article 109552"},"PeriodicalIF":4.2,"publicationDate":"2025-04-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143808529","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Fashioning all binary 3d transition metal oxides in the construction of dye-sensitized solar cells (DSSC) devices","authors":"Tahta Amrillah ,&nbsp;Lalu Jihad Al Jazeera ,&nbsp;Viona Maria Djojo ,&nbsp;Dewi Sintawati Try Sutrisno ,&nbsp;Natalia Imelda Wulan ,&nbsp;Yusuf Akmal Agam ,&nbsp;Muhammad Farhan Afif Mauludin ,&nbsp;Albert Rafael ,&nbsp;Yuliar Firdaus","doi":"10.1016/j.mssp.2025.109550","DOIUrl":"10.1016/j.mssp.2025.109550","url":null,"abstract":"<div><div>Dye-sensitized solar cells (DSSC) are among the most advanced solar cell technologies due to their remarkable features, including low cost and eco-friendliness. A good DSSC requires the correct combination of constituent materials which further strongly determines their performance. The strategies for selecting the appropriate material components in DSSC device configuration are needed. In this review article, we compile information on the potential material combinations used in DSSCs, particularly focusing on binary 3d transition metal oxides (TMO), which are widely used as photoanode and counter electrodes (CEs) in DSSC configurations. Given the diverse types of its element constituents, oxidation states, structures, and morphologies, it is essential to classify their potential roles in DSSC technologies. We discuss the prospects and challenges, as well as plausible strategies to enhance the performance of DSSCs using binary 3d TMO. We describe the pros and cons of these materials as components in DSSC configurations and propose rational designs to develop binary 3d TMO-based DSSCs. We also discussed rare aspects in the developments of DSSC especially when using the binary 3d TMO as main constituent materials, such as the strategy of green synthesis utilizing natural and waste sources, utilization of low-toxic chemicals, and employing bio-synthesis routes. We also discuss in detail the utilization of binary 3d TMO in the so-called next-generation DSSC as well as its integration on wearable devices, including their potential commercialization and waste management. We believe this article will serve as a valuable guide for researchers, as well as industry stakeholders aiming to achieve massive utilization of DSSCs in society.</div></div>","PeriodicalId":18240,"journal":{"name":"Materials Science in Semiconductor Processing","volume":"194 ","pages":"Article 109550"},"PeriodicalIF":4.2,"publicationDate":"2025-04-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143815371","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Performance and surge capacity evaluations of 1.2kV SiC VDMOSFETs with varied JFET width","authors":"Hou-Cai Luo ,&nbsp;Jing-Ping Zhang ,&nbsp;Ruo-nan Wang ,&nbsp;Huan Wu ,&nbsp;Bo-Feng Zheng ,&nbsp;Kai Zheng ,&nbsp;Guo-Qi Zhang ,&nbsp;Xian-Ping Chen","doi":"10.1016/j.mssp.2025.109524","DOIUrl":"10.1016/j.mssp.2025.109524","url":null,"abstract":"<div><div>The 1.2 kV SiC VDMOSFETs with varied JFET width (L_JFET) are designed and fabricated in this study. The static and dynamic characteristics of each design are measured and compared. There is the best trade-off performance in the design of L_JFET = 1.8 μm according to FOM (BV²/R_on) and FOM (C_iss/C_rss). Besides, the surge capacity and evaluation for series designs are investigated under conditions of V_gs = 0 V and V_gs = −5 V. There is a best surge capacity in design of L_JFET=1.2 μm, and the largest surge energy is the design of L_JFET=2.0 μm. Further, the surge failure mechanisms of L_JFET = 1.2 μm, 1.8 μm, and 2.0 μm under condition of V_gs = −5 V are investigated by decapsulated and FIB. Besides, the TCAD simulation was employed to theoretical analysis. The results show that the extremely high temperature was generated instantaneously under surge condition, resulting in epoxy carbonization, polysilicon melting and ILD oxide crack in failed position. Besides, the surge dissipating energy causes an instantaneous high temperature on the entire chip, resulting in aluminum remetallization. This paper would provide suggestions for device design and surge study.</div></div>","PeriodicalId":18240,"journal":{"name":"Materials Science in Semiconductor Processing","volume":"194 ","pages":"Article 109524"},"PeriodicalIF":4.2,"publicationDate":"2025-04-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143800143","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Structural and functional properties of BiFeO3/CuCrO2 nanocomposites for next-generation photosensors","authors":"R.M. Muthukrishnan ,&nbsp;Ankur Sharma ,&nbsp;Y. Naveen Kumar ,&nbsp;S.M. Abdul Kader","doi":"10.1016/j.mssp.2025.109547","DOIUrl":"10.1016/j.mssp.2025.109547","url":null,"abstract":"<div><div>Herein, we report the synthesis and comprehensive analysis of a novel BiFeO₃/CuCrO₂ (BFO/CCO) nanocomposite prepared via the co-precipitation method, focusing on its structural, optical, magnetic, and electrochemical properties. From an application perspective, the composite exhibits enhanced electrochemical photosensing performance (6.1 mA), attributed to the dual functionality of BFO for charge generation and CCO for charge storage and transport. The synergistic interplay between BFO's Faradaic processes and CCO's pseudocapacitive behavior reduces charge transfer resistance and enhances charge separation. X-ray diffraction patterns with Rietveld refinement confirmed phase purity and lattice distortions at the BFO-CCO interface, altering bond angles and lengths, as further supported by Raman and XPS analyses. The magnetic behavior transitioned from antiferromagnetic (BFO: Ms = 0.092 emu/g, CCO: Ms = 0.341 emu/g) to weak ferromagnetic (BCO: Ms = 0.187 emu/g) owing to interfacial superexchange interactions and mixed valence states (Fe²⁺/Fe³⁺, Cr³⁺/Cr⁶⁺). Optical studies revealed a bandgap of 2.23 eV, which is ideal for visible-light-driven applications. These results position the BFO/CCO nanocomposite as a promising candidate for optoelectronic and magnetoelectric applications.</div></div>","PeriodicalId":18240,"journal":{"name":"Materials Science in Semiconductor Processing","volume":"194 ","pages":"Article 109547"},"PeriodicalIF":4.2,"publicationDate":"2025-04-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143800520","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}