Materials Science in Semiconductor Processing最新文献

{"title":"Pressureless spark plasma sintering: A new one-step route to (Cr, Mo, W)Te2 synthesis","authors":"Maxim Yapryntsev,&nbsp;Oleg Ivanov,&nbsp;Aleksandr Pavlov,&nbsp;Ekaterina Yapryntseva","doi":"10.1016/j.mssp.2025.110093","DOIUrl":"10.1016/j.mssp.2025.110093","url":null,"abstract":"<div><div>Transition metal ditellurides (CrTe₂, MoTe₂, WTe₂) are promising materials for spintronics and phase-change electronics. However, their synthesis by conventional methods is challenging. The process is time-consuming and often yields non-stoichiometric products due to the high volatility of tellurium. Herein, we report a single-stage, ultrafast synthesis of these compounds via a novel Pressureless Reactive Spark Plasma Sintering (PRSPS) method. We first demonstrate that the standard reactive SPS approach, even under minimal pressure (5 MPa), is unsuitable for systems with low-melting-point components, as it causes the extrusion of molten tellurium from the reaction zone. To overcome this, a bespoke, quasi-sealed die assembly was engineered and successfully implemented, isolating the reactants from external pressure and preventing material loss. Using this pressureless method, phase-pure and highly crystalline powders of CrTe₂, MoTe₂, and WTe₂ were successfully synthesized in a record time of just 15 min. Comprehensive characterization by XRD, SEM, and EDS confirmed their phase purity, stoichiometric composition (M:Te ≈ 1:2), and microcrystalline plate-like morphology. This method represents a paradigm shift in chalcogenide synthesis, reducing process times from days to minutes and providing a scalable route to high-quality powders.</div></div>","PeriodicalId":18240,"journal":{"name":"Materials Science in Semiconductor Processing","volume":"201 ","pages":"Article 110093"},"PeriodicalIF":4.6,"publicationDate":"2025-09-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145155891","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Explicating the phase evolution in As and Se co-doped Ge2Sb2Te5 films for phase change memory","authors":"Shahin Parveen ,&nbsp;Nidhi Bhatt ,&nbsp;Abdul Whab ,&nbsp;Motiur Rahman Khan ,&nbsp;Fouran Singh ,&nbsp;Pumlianmunga","doi":"10.1016/j.mssp.2025.110095","DOIUrl":"10.1016/j.mssp.2025.110095","url":null,"abstract":"<div><div>In this work, the structural, electrical, electro-thermal, and switching properties of As₂Se₃-doped Ge₂Sb₂Te₅ films have been studied. Upon annealing, the films undergo a phase transition at higher temperatures from the amorphous state to a stable hexagonal phase via a metastable face-centered-cubic phase, notably without any observed phase separation and lattice distortion. Doping with As₂Se₃ significantly improves the thermal stability of the amorphous phase, increasing the crystallization temperature from ⁓168 °C to ⁓225 °C (x = 0.21). The band gap is increased due to the formation of high-energetic Ge-Se and As-Se bonds. Furthermore, the data retention temperature for a 10-year period is substantially improved from 78 °C to 124.93 °C with a corresponding increase in the activation energy. The threshold current required for phase transformation is reduced to 0.23 mA. Higher-doped films generate more Joule heat due to their increased resistivity, which, in turn, allows for a reduction in power consumption for the same applied current, indicating promising applications in phase change memory devices.</div></div>","PeriodicalId":18240,"journal":{"name":"Materials Science in Semiconductor Processing","volume":"201 ","pages":"Article 110095"},"PeriodicalIF":4.6,"publicationDate":"2025-09-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145156033","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Reversible thermally stimulated phase transition in amorphous–nanocrystalline β-V2O5 thin films for temperature-sensitive electronics","authors":"S. Tipawan Khlayboonme ,&nbsp;Natasia Fungfuang ,&nbsp;Mettaya Kitiwan","doi":"10.1016/j.mssp.2025.110086","DOIUrl":"10.1016/j.mssp.2025.110086","url":null,"abstract":"<div><div>V₂O₅ thin films are significant for next-generation temperature-sensitive electronic devices owing to notable phase stability and reversibility. Optimizing phase characteristics toward reversible low-temperature transitions enhances device performance. In this study, thin films of amorphous–nanocrystalline β-V₂O₅ were deposited on glass substrates using the inclined magnetron head in radio-frequency magnetron sputtering under an O₂ reactive gas. The effects of thermal stimulation (heating to 400 °C, followed by cooling) were investigated for an as-deposited film prepared at 7.5 % O₂ and for two annealed films deposited at 7.5 % and 10 % O_2. The annealed films were annealed at 300 °C before thermal stimulation. The films were characterized by X-ray diffractometry (XRD), Auger-electron spectroscopy, field-emission electron microscopy, Van der Pauw and Hall effect measurements, and ultraviolet–visible spectroscopy. The as-deposited film exhibited insulating behavior, whereas the annealed films at 7.5 % and 10 % O₂ demonstrated n-type and p-type conductivities, respectively, accompanied by decreased intensity of the V LMM Auger peak. Before thermal stimulation, the as-deposited film was highly amorphous, whereas the annealed films comprised the β-monoclinic phase. Thermal stimulation caused mixed β-monoclinic and β-tetragonal symmetries for all films and induced significant changes in surface morphology, except for the annealed film at 7.5 % O₂. Variations in carrier density and bandgap energy indicated that thermal energy promoted oxygen vacancies but reduced vanadium vacancies in the film structure. <em>In situ</em> XRD analysis demonstrated the phase stability and reversible formation of the nanocrystalline β-monoclinic phase, revealing potential for thermally responsive applications requiring repeatable phase behavior.</div></div>","PeriodicalId":18240,"journal":{"name":"Materials Science in Semiconductor Processing","volume":"201 ","pages":"Article 110086"},"PeriodicalIF":4.6,"publicationDate":"2025-09-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145156034","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Self-powered and broadband response photothermoelectric detector based on Bi2Te3 nanowires and carbon nanotubes sandwich structure","authors":"Dongliang Zhang ,&nbsp;Tianliang Feng ,&nbsp;Haigang Hou,&nbsp;Jian Yang,&nbsp;Guiwu Liu,&nbsp;Junlin Liu,&nbsp;Guanjun Qiao","doi":"10.1016/j.mssp.2025.110088","DOIUrl":"10.1016/j.mssp.2025.110088","url":null,"abstract":"<div><div>The broadband photodetectors recently attract widespread interest since the detector with multiple band response is highly desired. The traditional photodetector is inferior than thermal detector in meeting such requirement because the band gap transition dependent on sufficient photon energy, and the long wavelength region with weak energy may beyond detection. Here, bismuth telluride (Bi₂Te₃) nanowires (∼21.5 nm diameter, aspect ratios up to 80) are embedded between carbon nanotube (CNT) layers to construct a sandwich-structured detector for broadband detection from ultraviolet to near-infrared. A temperature gradient induced by localized photothermal conversion drives directional flow of charge carriers to generate electric potential via Seebeck effect, enabling self-powered operation of the detector without external power sources. The I-V curves and position dependent photovoltage of the detector based on CNT/Bi₂Te₃/CNT film confirm that the mechanism of signal generation stems from photothermoelectric effect. The CNT layers serve as both an efficient photothermal conversion layer and charge transport channel, while simultaneously forming an energy filtering effect with Bi₂Te₃ to improve the Seebeck coefficient. As a result, the CNT/Bi₂Te₃/CNT detector achieves efficient wideband detection across 380 nm–1550 nm, with a maximum specific detectivity reaches 1.27 × 10⁹ cm Hz^1/2 W⁻¹, representing a ∼115 % enhancement over a pure CNT detector. This work offers significant reference for the preparation of nanowire and the design of high-performance photothermoelectric detector.</div></div>","PeriodicalId":18240,"journal":{"name":"Materials Science in Semiconductor Processing","volume":"201 ","pages":"Article 110088"},"PeriodicalIF":4.6,"publicationDate":"2025-09-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145155890","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Adiabatic small polaron hopping in a-MoO3 induced by oxygen vacancies","authors":"B. Gianfelici ,&nbsp;F. Paparoni ,&nbsp;R. Gunnella ,&nbsp;S.J. Rezvani ,&nbsp;N. Pinto","doi":"10.1016/j.mssp.2025.110073","DOIUrl":"10.1016/j.mssp.2025.110073","url":null,"abstract":"<div><div>Oxygen vacancy induced polaron formation in defective MoO<span><math><msub><mrow></mrow><mrow><mn>3</mn><mo>−</mo><mi>x</mi></mrow></msub></math></span> has been suggested theoretically to maintain its structural stability. Here, we show the formation of extremely localized small polarons related to the ionic intermixing due to the vacancy formation in amorphous MoO<span><math><msub><mrow></mrow><mrow><mn>3</mn><mo>−</mo><mi>x</mi></mrow></msub></math></span>. High concentration of the oxygen vacancies (<span><math><mo>∼</mo></math></span> 4%) results in two distinct adiabatic small polaronic hopping mechanisms in different temperature range. Activation energy values confirm the polaron hopping along distinct oxygen vacancy paths related to the vacancy formation energies. Highly localized small polarons, with radius smaller than the interatomic distances, are the result of a short-range order in the defective matrix of MoO<span><math><msub><mrow></mrow><mrow><mn>3</mn></mrow></msub></math></span>. Polaronic conduction in this system can be tuned via the density of the oxygen vacancies, which leads to the enhanced charge stability that can be exploited in advanced electronic and optical devices.</div></div>","PeriodicalId":18240,"journal":{"name":"Materials Science in Semiconductor Processing","volume":"201 ","pages":"Article 110073"},"PeriodicalIF":4.6,"publicationDate":"2025-09-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145156035","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"High Curie-temperature ferromagnetism engineering in WTe2 monolayer: The case of Mn and Fe codoping with nonmetal-enhanced magnetic properties","authors":"D.M. Hoat ,&nbsp;R. Ponce-Pérez ,&nbsp;J. Guerrero-Sanchez","doi":"10.1016/j.mssp.2025.110084","DOIUrl":"10.1016/j.mssp.2025.110084","url":null,"abstract":"<div><div>Searching for new two-dimensional (2D) ferromagnetic materials with high Curie temperature has attracted great research attention because of the rapid development of spintronics. In this work, efficient routes for the ferromagnetism engineering in WTe₂ monolayer are proposed. Pristine WTe₂ monolayer is intrinsically nonmagnetic, possessing a direct band gap of 1.07 eV. The monolayer is magnetized by separately doping with Mn and Fe transition metals with total magnetic moments of 1.00 and 0.94 <span><math><msub><mrow><mi>μ</mi></mrow><mrow><mi>B</mi></mrow></msub></math></span>, respectively. Mn doping leads to the in-plane magnetic anisotropy (IMA), while the perpendicular magnetic anisotropy (PMA) is obtained by Fe doping. The ferromagnetic (FM) state is predicted to be stable in WTe₂ monolayer codoped with Mn and Fe atoms with a high Curie temperature of 644 K. In this case, the PMA with feature-rich magnetic semiconductor nature is found, which suggest the promise of MnFe-codoped system toward fabrication of magnetoresistive random access memories (MRAMs). Further, additional substitutional doping of nonmetal (NM = S, Se, Cl, and Br) atoms is proposed to alter the magnetic properties. It is found that S and Se impurities increase Curie temperature to very high values of 1261 and 743 K, respectively. Meanwhile, this parameter decreases to 522 and 496 K by Cl and Br dopant atoms, respectively. Herein, all NM impurities induce the PMA-to-IMA switching, where the IMA is stronger with halogen impurities. Such that MnFe+NM-codoped systems can be considered as 2D potential candidates for magnetic field sensing. Moreover, NM impurities also enhance the magnetic nature semiconductor by increasing the spin-up energy gap. Finally, the stability analysis suggests the feasible experimental realization and structural stability of all the doped/codoped WTe₂ systems. Our findings may recommend efficient routes to functionalize WTe₂ monolayer toward selective spintronic applications controlled by nonmetal atoms.</div></div>","PeriodicalId":18240,"journal":{"name":"Materials Science in Semiconductor Processing","volume":"201 ","pages":"Article 110084"},"PeriodicalIF":4.6,"publicationDate":"2025-09-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145155892","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Supercritical fluid-mediated exfoliation of NbSe2 and fabrication of RGO-NbSe2 nanostructures for enhanced hydrogen evolution","authors":"Jeyaraman Anandha Raj ,&nbsp;Murugesan Arunkumar ,&nbsp;Pitchai Thangasamy ,&nbsp;Marappan Sathish","doi":"10.1016/j.mssp.2025.110090","DOIUrl":"10.1016/j.mssp.2025.110090","url":null,"abstract":"<div><div>Uniform rod-like NbSe₂ nanostructures were precisely fabricated from bulk NbSe₂ using a one-pot, rapid supercritical fluid process, where a mildly basic solution acted as the exfoliating agent. The formation of NbSe₂ nanorods was confirmed by microscopic analyses. XRD, Raman, and XPS results further validated the successful exfoliation and indicated partial surface oxidation of NbSe₂ into Nb₂O₅ nanostructures during SCF processing. Interestingly, the formation of rod-like NbSe₂ was largely suppressed in the synthesis of RGO-NbSe₂ nanocomposites, as the RGO nanosheets hindered the growth of such morphologies. The synthesized RGO-NbSe₂ nanocomposites exhibited outstanding electrocatalytic activity toward hydrogen evolution, requiring only ∼123 mV overpotential to reach 10 mA cm⁻². This performance notably surpassed that of the pristine NbSe₂ nanorods, which required ∼355 mV for the same current density. This enhancement is attributed to the efficient exfoliation of bulk NbSe₂ into nanosheets, which enhances the exposure of reactive edge sites and promotes the formation of heterostructures with favourable hydrogen adsorption characteristics. The integration with highly conductive RGO further contributes to charge transfer and overall catalytic synergy.</div></div>","PeriodicalId":18240,"journal":{"name":"Materials Science in Semiconductor Processing","volume":"201 ","pages":"Article 110090"},"PeriodicalIF":4.6,"publicationDate":"2025-09-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145118919","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Hydrogen gas sensing enhancement with gamma-irradiated S-CNT/V2O5 thin film: A synergistic effect","authors":"Neetu Yadav ,&nbsp;Peramjeet Singh ,&nbsp;Amit Kumar Verma ,&nbsp;Durvesh Gautam ,&nbsp;Anit Dawar ,&nbsp;Sunil Ojha ,&nbsp;Yogendra K. Gautam ,&nbsp;Pravin Kumar ,&nbsp;Fouran Singh ,&nbsp;Narendra Kumar Pandey","doi":"10.1016/j.mssp.2025.110063","DOIUrl":"10.1016/j.mssp.2025.110063","url":null,"abstract":"<div><div>The present study intends to examine the effect of gamma irradiation on single-wall carbon nanotube-dopedvanadium pentoxide (S-CNT/V₂O₅) thin films. This was accomplished by synthesizing S-CNT/V₂O₅ nanoparticles using a hydrothermal route and fabricating them into thin films using the spin-coating technique. The as-synthesized thin films were irradiated with gamma rays at different doses, viz. 0.1, 10, and 50 kGy. The X-ray diffraction revealed that the film showed an orthorhombic structure, and with increasing the gamma dose, the crystallite size and the optical band gap as obtained by using UV–vis spectroscopy decreased from 55.68 to 49.69 nm and 3.15 to 2.82 eV, respectively. The other characterizations like field emission electron scanning microscopy (FE-SEM), energy dispersive analysis of X-ray (EDAX), and X-Ray Photoelectron Spectroscopy (XPS) were also performed to study the surface and elemental composition of thin films. The gas-sensing characteristics of these thin films-cum-sensors were determined by exposing them with different concentrations of H₂ gas ranging from 5 ppm to 100 ppm. The sensor irradiated with 50 kGy dose of gamma photons showed enhanced sensitivity of 140 % for 100 ppm H₂ gas concentration with response and recovery times of 42.4 and 78.3 s, respectively, at 100 °C. The selectivity of the sensor was tested using the reducing and oxidising gases of CO, NO₂, NH₃ and H₂ at 100 °C for 100 ppm gas concentration. Among these gases, the sensor showed the best sensing response towards H₂ gas. The performance of the sensor after 90 days remained satisfactory.</div></div>","PeriodicalId":18240,"journal":{"name":"Materials Science in Semiconductor Processing","volume":"201 ","pages":"Article 110063"},"PeriodicalIF":4.6,"publicationDate":"2025-09-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145118920","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Multi-channel transport with inter-digitated electrode-enabled flexible transparent heater for optical and thermal regulations","authors":"Junghyun Lee ,&nbsp;Chanhyuk Choi ,&nbsp;Malkeshkumar Patel ,&nbsp;Thanh Tai Nguyen ,&nbsp;Shuvaraj Ghosh ,&nbsp;Seunghee Cho ,&nbsp;Joondong Kim","doi":"10.1016/j.mssp.2025.110089","DOIUrl":"10.1016/j.mssp.2025.110089","url":null,"abstract":"<div><div>Transparent heaters have various energy applications, especially in buildings, with the advantage of low energy consumption, leading to energy-efficient heating. They can be integrated into structures and color-tuned for enhanced aesthetics. Herein, we designed transparent flexible heaters with various structures based on the Joule heating effect through multi-channel transport with inter-digitated-electrode (IDE), suitable for low-power utility with high performance. The approach to increase heat generation is decreasing resistance and increasing current at the same applied voltage. Multi-channel silver (Ag) metal-oxide composite generates heat through the Joule effect with high visible light transmittance and infrared reflectance. By depositing Ag on a transparent conducting oxide, it is possible to form electrodes that serve as a medium for efficient heat transfer. We evaluated each transparent heater structure's electrical and optical characteristics to assess their suitability for window applications. Comparatively, the oxide/metal/oxide/metal/oxide-IDE heater shows visible transmittance (69 %) and excellent IR-cutting (90 %) by tuning the light propagation. This transparent IDE structure with a size of 2.5 × 2.5 cm² has sheet resistance (1.14 Ω/□) and rapid heating elevation (191 °C) at a bias of 3 V. This demonstrates that the functional design of electrodes can serve as energy-saving windows and selectively filter light propagation in useful ways.</div></div>","PeriodicalId":18240,"journal":{"name":"Materials Science in Semiconductor Processing","volume":"201 ","pages":"Article 110089"},"PeriodicalIF":4.6,"publicationDate":"2025-09-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145118914","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Electron beam surface patterning of Se alloys","authors":"S. Hassak ,&nbsp;A. Portavoce ,&nbsp;A. Campos ,&nbsp;C.M. Ruiz ,&nbsp;C. Boujrouf ,&nbsp;M. Bertoglio ,&nbsp;M. Descoins ,&nbsp;S. Benyoucef ,&nbsp;K. Hoummada","doi":"10.1016/j.mssp.2025.110070","DOIUrl":"10.1016/j.mssp.2025.110070","url":null,"abstract":"<div><div>Amorphous chalcogen alloys based on selenium (Se) and tellurium (Te) are extensively studied due to their unique physical properties. These materials find practical applications in infrared technologies, micro- and nano-electronics, nano-optics, photonics, and optoelectronics. Recently, laser and electron beam irradiations were shown to lead to surface mass transport or local density variations on Se-based amorphous alloys, and thus, to allow the surfaces of these chalcogen alloys to be patterned without the use of a mask such as for conventional lithography. The driving force of this phenomenon is assumed to be linked to charge accumulation in the irradiated regions, causing significant repulsion between ions in the film, leading to the local modification of the film volume or to mass transport in the vicinity of the film surface. In this work, room-temperature electron beam structuring effect is investigated on both amorphous and crystalline Se-rich chalcogen alloy thin films, exploring the potential of this technique for large-scale chalcogen alloy surface patterning, and providing new insights on the mechanism driving chalcogen alloy structuring by electron beam irradiations.</div></div>","PeriodicalId":18240,"journal":{"name":"Materials Science in Semiconductor Processing","volume":"201 ","pages":"Article 110070"},"PeriodicalIF":4.6,"publicationDate":"2025-09-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145118921","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}