高性能钙钛矿串联结构：材料创新、设备工程和工业前景

IF 4.6 3区工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC

Materials Science in Semiconductor Processing Pub Date : 2025-10-17 DOI:10.1016/j.mssp.2025.110149

K. Durga Devi , V. Samuthira Pandi , R. Sundar , G. Vishnupriya

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引用次数: 0

摘要

钙钛矿串联太阳能电池已经成为最有希望超越基本单结效率限制的途径，通过增强光谱利用率和电压附加机制，实现超过31%的认证效率。这篇全面的综述考察了所有串联架构从概念验证演示到商业就绪的快速演变。我们系统地分析了全钙钛矿串联，利用宽带隙（1.6-1.8 eV）和窄带隙（1.1-1.4 eV）亚电池实现30.1%的效率，钙钛矿/硅组合通过工业平台集成达到31.25%，以及钙钛矿/有机和钙钛矿/硫系系统等替代配置。通过先进的材料工程和工艺创新，解决了关键的技术挑战，包括当前匹配优化，防止Sn-Pb氧化和制造可扩展性。商业应用前景显示出令人信服的优势，包括提高25 - 30%的效率，降低15 - 20%的平准化能源成本。

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High-performance perovskite tandem architectures: Materials innovation, device engineering, and industrial prospects

Perovskite tandem solar cells have emerged as the most promising pathway to surpass fundamental single-junction efficiency limitations, achieving certified efficiencies exceeding 31 % through enhanced spectral utilization and voltage addition mechanisms. This comprehensive review examines the rapid evolution from proof-of-concept demonstrations to commercial readiness across all tandem architectures. We systematically analyze all-perovskite tandems utilizing wide-bandgap (1.6–1.8 eV) and narrow-bandgap (1.1–1.4 eV) subcells achieving 30.1 % efficiency, perovskite/silicon combinations reaching 31.25 % through industrial platform integration, and alternative configurations including perovskite/organic and perovskite/chalcogenide systems. Critical technical challenges including current matching optimization, Sn-Pb oxidation prevention, and manufacturing scalability are addressed through advanced materials engineering and processing innovations. Commercial deployment prospects reveal compelling advantages including 25–30 % higher efficiency enabling 15–20 % lower levelized energy costs.

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来源期刊

Materials Science in Semiconductor Processing 工程技术-材料科学：综合

CiteScore

8.00

自引率

4.90%

发文量

780

审稿时长

42 days

期刊介绍： Materials Science in Semiconductor Processing provides a unique forum for the discussion of novel processing, applications and theoretical studies of functional materials and devices for (opto)electronics, sensors, detectors, biotechnology and green energy. Each issue will aim to provide a snapshot of current insights, new achievements, breakthroughs and future trends in such diverse fields as microelectronics, energy conversion and storage, communications, biotechnology, (photo)catalysis, nano- and thin-film technology, hybrid and composite materials, chemical processing, vapor-phase deposition, device fabrication, and modelling, which are the backbone of advanced semiconductor processing and applications. Coverage will include: advanced lithography for submicron devices; etching and related topics; ion implantation; damage evolution and related issues; plasma and thermal CVD; rapid thermal processing; advanced metallization and interconnect schemes; thin dielectric layers, oxidation; sol-gel processing; chemical bath and (electro)chemical deposition; compound semiconductor processing; new non-oxide materials and their applications; (macro)molecular and hybrid materials; molecular dynamics, ab-initio methods, Monte Carlo, etc.; new materials and processes for discrete and integrated circuits; magnetic materials and spintronics; heterostructures and quantum devices; engineering of the electrical and optical properties of semiconductors; crystal growth mechanisms; reliability, defect density, intrinsic impurities and defects.