莲花型多孔铜与氧化铝基板直接键合铜的接合

IF 4.6 3区工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC

Materials Science in Semiconductor Processing Pub Date : 2025-10-17 DOI:10.1016/j.mssp.2025.110137

Sang-Gyu Choi , Sangwook Kim , Jinkwan Lee , Keun-Soo Kim , Soongkeun Hyun

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引用次数: 0

摘要

本研究利用莲花铜（一种单向多孔材料）与氧化铝陶瓷衬底直接结合，研究了直接键合铜（DBC）工艺。莲花铜是在氢氮气氛中通过连续铸造工艺制造的。当采用传统DBC方法时，由于高表面张力驱动的铜液流动过多，莲花结构容易坍塌。因此，由于传统方法不适合莲花铜，因此专门设计了一种改进的DBC键合工艺。成功的DBC键合的一个关键方面是熔融铜和氧化铝表面之间的反应，形成一个亲密的界面键。通过控制莲花铜表面的氧化速率，可以限制铜液的迁移率，以满足与氧化铝反应和结合的条件。实现了重新设计的DBC工艺，并在不同时间条件下进行了键合实验。在集成DBC工艺下，结合的DBC试样保留了莲花铜的形貌。结合界面的抗剪强度评价证实，莲花铜可以成功地与氧化铝基体结合，即使没有单独的氧化预处理步骤。这证明了多孔铜结构在高级陶瓷-金属连接应用中的潜在适用性。

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Joining of lotus-type porous copper to alumina substrate by direct bonded copper technique

This study investigates the Direct Bonded Copper (DBC) process using lotus copper, a unidirectional porous material, for direct bonding to alumina ceramic substrates. Lotus copper is fabricated via a continuous casting process in a hydrogen-nitrogen atmosphere. When using the conventional DBC method, the lotus structure tends to collapse due to excessive molten copper flow driven by high surface tension. Therefore, a modified DBC bonding process was specifically designed for lotus copper, as the conventional approach proved unsuitable. A key aspect of successful DBC bonding is the reaction between molten copper and alumina surface to form an intimate interfacial bond. By controlling the oxidation rate on the surface of the lotus copper, the mobility of molten copper should be limited to satisfy the conditions for reaction and bonding with alumina. A redesigned DBC process was implemented, and bonding experiments were conducted under various time conditions. Under the integrated DBC process, the bonded DBC specimens retained the morphology of lotus copper. The shear strength evaluation of the bonding interface confirmed that lotus copper could be successfully joined to the alumina substrate even without a separate oxidation pretreatment step. This demonstrates the potential applicability of the porous copper structure in advanced ceramic–metal joining applications.

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来源期刊

Materials Science in Semiconductor Processing 工程技术-材料科学：综合

CiteScore

8.00

自引率

4.90%

发文量

780

审稿时长

42 days

期刊介绍： Materials Science in Semiconductor Processing provides a unique forum for the discussion of novel processing, applications and theoretical studies of functional materials and devices for (opto)electronics, sensors, detectors, biotechnology and green energy. Each issue will aim to provide a snapshot of current insights, new achievements, breakthroughs and future trends in such diverse fields as microelectronics, energy conversion and storage, communications, biotechnology, (photo)catalysis, nano- and thin-film technology, hybrid and composite materials, chemical processing, vapor-phase deposition, device fabrication, and modelling, which are the backbone of advanced semiconductor processing and applications. Coverage will include: advanced lithography for submicron devices; etching and related topics; ion implantation; damage evolution and related issues; plasma and thermal CVD; rapid thermal processing; advanced metallization and interconnect schemes; thin dielectric layers, oxidation; sol-gel processing; chemical bath and (electro)chemical deposition; compound semiconductor processing; new non-oxide materials and their applications; (macro)molecular and hybrid materials; molecular dynamics, ab-initio methods, Monte Carlo, etc.; new materials and processes for discrete and integrated circuits; magnetic materials and spintronics; heterostructures and quantum devices; engineering of the electrical and optical properties of semiconductors; crystal growth mechanisms; reliability, defect density, intrinsic impurities and defects.