{"title":"Electronic and atomic structure-function relationships in smart window materials via X-ray spectroscopy","authors":"Arvind Chandrasekar , Chi-Liang Chen , Chung-Li Dong","doi":"10.1016/j.mssp.2025.110151","DOIUrl":null,"url":null,"abstract":"<div><div>Smart window technologies, encompassing electrochromic, thermochromic, and gasochromic systems, hold immense potential for improving energy efficiency in buildings by dynamically controlling solar radiation and heat gain. Despite rapid advances in materials engineering, commercial viability is hindered by issues such as limited durability, sluggish switching, and poor spectral selectivity. Understanding the atomic- and electronic-scale mechanisms governing these limitations is critical for performance optimization. Synchrotron-based X-ray spectroscopies, particularly X-ray absorption spectroscopy (XAS), offer unparalleled insight into local electronic structure, coordination environment, and dynamic processes occurring during chromogenic transitions. This review critically evaluates the role of XAS and emerging techniques such as X-ray emission spectroscopy (XES), resonant inelastic X-ray scattering (RIXS), and scanning transmission X-ray microscopy (STXM) in deciphering structure-function relationships in smart window materials. By integrating recent in situ and operando studies, we highlight how X-ray spectroscopy accelerates the development of next-generation smart windows with enhanced stability, response time, and multifunctional capabilities, including hydrogen sensing. This work provides a forward-looking framework for tailoring chromogenic materials through atomic- and electronic-scale insights, ultimately enabling scalable deployment in energy-efficient architecture.</div></div>","PeriodicalId":18240,"journal":{"name":"Materials Science in Semiconductor Processing","volume":"202 ","pages":"Article 110151"},"PeriodicalIF":4.6000,"publicationDate":"2025-10-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Materials Science in Semiconductor Processing","FirstCategoryId":"5","ListUrlMain":"https://www.sciencedirect.com/science/article/pii/S1369800125008893","RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
引用次数: 0
Abstract
Smart window technologies, encompassing electrochromic, thermochromic, and gasochromic systems, hold immense potential for improving energy efficiency in buildings by dynamically controlling solar radiation and heat gain. Despite rapid advances in materials engineering, commercial viability is hindered by issues such as limited durability, sluggish switching, and poor spectral selectivity. Understanding the atomic- and electronic-scale mechanisms governing these limitations is critical for performance optimization. Synchrotron-based X-ray spectroscopies, particularly X-ray absorption spectroscopy (XAS), offer unparalleled insight into local electronic structure, coordination environment, and dynamic processes occurring during chromogenic transitions. This review critically evaluates the role of XAS and emerging techniques such as X-ray emission spectroscopy (XES), resonant inelastic X-ray scattering (RIXS), and scanning transmission X-ray microscopy (STXM) in deciphering structure-function relationships in smart window materials. By integrating recent in situ and operando studies, we highlight how X-ray spectroscopy accelerates the development of next-generation smart windows with enhanced stability, response time, and multifunctional capabilities, including hydrogen sensing. This work provides a forward-looking framework for tailoring chromogenic materials through atomic- and electronic-scale insights, ultimately enabling scalable deployment in energy-efficient architecture.
期刊介绍:
Materials Science in Semiconductor Processing provides a unique forum for the discussion of novel processing, applications and theoretical studies of functional materials and devices for (opto)electronics, sensors, detectors, biotechnology and green energy.
Each issue will aim to provide a snapshot of current insights, new achievements, breakthroughs and future trends in such diverse fields as microelectronics, energy conversion and storage, communications, biotechnology, (photo)catalysis, nano- and thin-film technology, hybrid and composite materials, chemical processing, vapor-phase deposition, device fabrication, and modelling, which are the backbone of advanced semiconductor processing and applications.
Coverage will include: advanced lithography for submicron devices; etching and related topics; ion implantation; damage evolution and related issues; plasma and thermal CVD; rapid thermal processing; advanced metallization and interconnect schemes; thin dielectric layers, oxidation; sol-gel processing; chemical bath and (electro)chemical deposition; compound semiconductor processing; new non-oxide materials and their applications; (macro)molecular and hybrid materials; molecular dynamics, ab-initio methods, Monte Carlo, etc.; new materials and processes for discrete and integrated circuits; magnetic materials and spintronics; heterostructures and quantum devices; engineering of the electrical and optical properties of semiconductors; crystal growth mechanisms; reliability, defect density, intrinsic impurities and defects.