Materials Science in Semiconductor Processing最新文献_第2页

Characterization and properties of polypyrrole modified ZnIn2S4/TiO2/Ti photoanode in photocatalytic fuel cell 聚吡咯改性ZnIn2S4/TiO2/Ti光阳极光催化燃料电池的表征与性能

IF 4.2 3区工程技术

Materials Science in Semiconductor Processing Pub Date : 2025-05-06 DOI: 10.1016/j.mssp.2025.109635

Yunlan Xu, Jiaxin Mou, Lin Dong, Qingmei Qiao, Dengjie Zhong

{"title":"Characterization and properties of polypyrrole modified ZnIn2S4/TiO2/Ti photoanode in photocatalytic fuel cell","authors":"Yunlan Xu, Jiaxin Mou, Lin Dong, Qingmei Qiao, Dengjie Zhong","doi":"10.1016/j.mssp.2025.109635","DOIUrl":"10.1016/j.mssp.2025.109635","url":null,"abstract":"<div><div>The performance of photocatalytic fuel cell (PFC) depends on photoanode, which is the key to generate photoexcited carriers and degrade organic wastes. In this study, ZnIn<sub>2</sub>S<sub>4</sub> nano-bandgap semiconductor and polypyrrole were used to modify TiO<sub>2</sub> to prepare polypyrrole/ZnIn<sub>2</sub>S<sub>4</sub>/TiO<sub>2</sub>/Ti photoanode to increase its photo-response range and the separation of photoexcited carriers. The PFC with polypyrrole/ZnIn<sub>2</sub>S<sub>4</sub>/TiO<sub>2</sub>/Ti photoanode and copper cathode was built to degrade RhB and generate electricity. The RhB removal rate, open-circuit voltage, short-circuit current density, and maximum power density of the photocatalytic fuel cell were 94.6 % (1 h), 0.47 V, 0.23 mA cm<sup>−2</sup> and 21.11 μW cm<sup>−2</sup>, respectively. The improvement of PFC performance is attributed to the good visible-light responsive properties of polypyrrole/ZnIn<sub>2</sub>S<sub>4</sub>.The presence of polypyrrole acts as both an electron donor and a hole acceptor, which provides an ideal pathway for the separation and transmission of photogenerated carriers. The synergistic effect of polypyrrole, ZnIn<sub>2</sub>S<sub>4</sub> and TiO<sub>2</sub> eventually increases the photocatalytic ability of the PFC. This research can offer reference for the study of TiO<sub>2</sub>-based efficient visible light responsive PFC.</div></div>","PeriodicalId":18240,"journal":{"name":"Materials Science in Semiconductor Processing","volume":"195 ","pages":"Article 109635"},"PeriodicalIF":4.2,"publicationDate":"2025-05-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143912197","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

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P-GaX(X=S, Se)-P Hetero-Tri-Layer Structures: Novel materials for enhanced performance in electronics and water splitting: A DFT study P-GaX(X=S, Se)-P异质三层结构：增强电子和水分解性能的新材料：DFT研究

IF 4.2 3区工程技术

Materials Science in Semiconductor Processing Pub Date : 2025-05-06 DOI: 10.1016/j.mssp.2025.109651

Arshad Ali , Laiba Ihsan , Abdullah M.S. Alhuthali , Muhammad Fayaz , Sher Ali , Qaisar Alam

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Phase transition driven enhancements of multiferroic properties in doped BiFeO3: A comprehensive review 掺杂BiFeO3中相变驱动的多铁性能增强：综述

IF 4.2 3区工程技术

Materials Science in Semiconductor Processing Pub Date : 2025-05-06 DOI: 10.1016/j.mssp.2025.109613

Subhash Sharma , Santhoshkumar Mahadevan , Kaushlendra Pandey , Parminder Singh , Sunil Chauhan , Manish Kumar , J.M. Siqueiros , O. Raymond Herrera

{"title":"Phase transition driven enhancements of multiferroic properties in doped BiFeO3: A comprehensive review","authors":"Subhash Sharma , Santhoshkumar Mahadevan , Kaushlendra Pandey , Parminder Singh , Sunil Chauhan , Manish Kumar , J.M. Siqueiros , O. Raymond Herrera","doi":"10.1016/j.mssp.2025.109613","DOIUrl":"10.1016/j.mssp.2025.109613","url":null,"abstract":"<div><div>In this review article, we explore the impact of doping engineering at both A and B sites with transition metals, rare earth elements, and non-metal elements on the phase transition and its effects on the multiferroic properties of BiFeO<sub>3</sub> (BFO) materials. BFO is a good multiferroic material at room temperature, showing ferroelectric and antiferromagnetic ordering; however, its practical applications are restricted by some problems, such as leakage current, weak magnetization, and phase instability. Doping is a good strategy to tailor the physical properties by inducing structural phase transitions and distortions. We discuss the different elemental doping in BFO and their mechanism for modifying the multiferroic and electronic properties. Furthermore, we shed some light on the interplay between structural modifications and the enhancement of multiferroic properties, providing insights into optimizing BFO-based materials for advanced technological applications. This timely review article allows the new researcher to think and decide to understand the critical role of targeted doping in overcoming the limitations of pure BiFeO<sub>3</sub>, paving the way for its application in multifunctional devices.</div></div>","PeriodicalId":18240,"journal":{"name":"Materials Science in Semiconductor Processing","volume":"195 ","pages":"Article 109613"},"PeriodicalIF":4.2,"publicationDate":"2025-05-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143907841","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

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Systematic analysis of the trapping and reliability of Al2O3/GaN MOS capacitors with different atomic layer deposition techniques 系统分析了不同原子层沉积工艺下Al2O3/GaN MOS电容器的俘获性能和可靠性

IF 4.2 3区工程技术

Materials Science in Semiconductor Processing Pub Date : 2025-05-05 DOI: 10.1016/j.mssp.2025.109619

Manuel Fregolent , Marco Tomasi , Carlo De Santi , Matteo Buffolo , Liad Tadmor , Enrico Brusaterra , Eldad Bahat Treidel , Andrea Cester , Gaudenzio Meneghesso , Enrico Zanoni , Matteo Meneghini

{"title":"Systematic analysis of the trapping and reliability of Al2O3/GaN MOS capacitors with different atomic layer deposition techniques","authors":"Manuel Fregolent , Marco Tomasi , Carlo De Santi , Matteo Buffolo , Liad Tadmor , Enrico Brusaterra , Eldad Bahat Treidel , Andrea Cester , Gaudenzio Meneghesso , Enrico Zanoni , Matteo Meneghini","doi":"10.1016/j.mssp.2025.109619","DOIUrl":"10.1016/j.mssp.2025.109619","url":null,"abstract":"<div><div>We investigate the robustness and charge trapping phenomena under positive and negative bias stress in Al<sub>2</sub>O<sub>3</sub>/n-GaN metal-oxide-semiconductor capacitors fabricated with different atomic layer deposition (ALD) techniques: (i) thermal ALD (ThALD), (ii) plasma-enhanced ALD (PEALD), and (iii) stacked-ALD, obtained by alternating the latter two. The results, obtained by means of standard I-V and pulsed-CV measurements, show that PEALD results in the best oxide robustness under positive voltage stress, while ThALD results in the lowest charge trapping. We demonstrate that stacked-ALD layers presents the best trade-off to maximize robustness and minimize charge trapping phenomena, clearing the way for application in GaN MOSFET fabrication. Additionally, we compare the performance of different in-situ plasma pre-treatments on the GaN surface, proving that the NH<sub>3</sub> plasma is effective for improving the device performance in terms of trapped charge and reliability. The results confirm the beneficial role of stacked ALD deposition and surface pre-treatments on the electrical stability and reliability of oxide layers.</div></div>","PeriodicalId":18240,"journal":{"name":"Materials Science in Semiconductor Processing","volume":"195 ","pages":"Article 109619"},"PeriodicalIF":4.2,"publicationDate":"2025-05-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143907798","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

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Structural and optical properties of diluted GaAsBi alloys grown on GaAs(115) substrate by MOVPE 用MOVPE法在GaAs（115）衬底上生长稀释GaAsBi合金的结构和光学性能

IF 4.2 3区工程技术

Materials Science in Semiconductor Processing Pub Date : 2025-05-05 DOI: 10.1016/j.mssp.2025.109649

I. Zaied , A.M. Alghurabi , H. Fitouri , A. Rebey

引用次数: 0

Temperature-dependent characteristics of Tantalum and Tantalum nitride based p-Si structures 钽和氮化钽基p-Si结构的温度依赖特性

IF 4.2 3区工程技术

Materials Science in Semiconductor Processing Pub Date : 2025-05-05 DOI: 10.1016/j.mssp.2025.109645

Tohidul Islam , Hasan Efeoǧlu , Abdulmecit Turut

{"title":"Temperature-dependent characteristics of Tantalum and Tantalum nitride based p-Si structures","authors":"Tohidul Islam , Hasan Efeoǧlu , Abdulmecit Turut","doi":"10.1016/j.mssp.2025.109645","DOIUrl":"10.1016/j.mssp.2025.109645","url":null,"abstract":"<div><div>We investigated the temperature-dependent current-voltage (<em>I-V-T</em>) characteristics data of Ta and Ta/TaN-based <em>p</em>-Si Schottky barrier diodes (SBDs). The Schottky barrier heights (SBH) for Ta/<em>p</em>-Si and Ta/TaN<sub>1-x</sub>/p-Si SBDs were obtained as 0.574 eV and 0.717 eV at 300 K, respectively. The difference between their SBHs is 0.143 eV at 300 K. At temperatures below 240 K for the Ta/TaN<sub>1-x</sub>/<em>p</em>-Si, more excess current than estimated by the TE model was observed at low bias voltages in the <em>I-V</em> curves. The excess current increased with a decrease in temperature. The phenomenon has been ascribed to the low SBH-patches embedded at the MS interface. Moreover, the thermal sensitivity <em>V-T</em> data were measured from 20 K up to 320 K at 2.0 K intervals under different current levels. It has been seen that the linear portion of the <em>V-T</em> traces of the Ta/TaN<sub>1-x</sub>/<em>p</em>-Si SBDs have corresponded to a wider temperature range with more thermal sensitivity coefficient <em>α</em> than that of the Ta/<em>p</em>-Si at each current level. For example, the <em>α</em> values of 2.573 and 2.710 mV/K at 50 nA, and 2.070 and 2.230 mV/K at 10.0 μA have been obtained for the Ta/<em>p</em>-Si and Ta/TaN<sub>1-x</sub>/<em>p</em>-Si SBDs, respectively.</div></div>","PeriodicalId":18240,"journal":{"name":"Materials Science in Semiconductor Processing","volume":"195 ","pages":"Article 109645"},"PeriodicalIF":4.2,"publicationDate":"2025-05-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143907795","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

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Green synthesis of Ni, Co-based oxides for water oxidation applications 绿色合成镍、钴基氧化物在水氧化中的应用

IF 4.2 3区工程技术

Materials Science in Semiconductor Processing Pub Date : 2025-05-04 DOI: 10.1016/j.mssp.2025.109643

Verônica de M. Andrade , Sávio M. Lopes , Rafael A. Raimundo , Ricardo F. Alves , Allan J.M. Araújo , Pamala S. Vieira , Fausthon F. da Silva , Marco A. Morales , Daniel A. Macedo , Duncan P. Fagg , Glageane da S. Souza

{"title":"Green synthesis of Ni, Co-based oxides for water oxidation applications","authors":"Verônica de M. Andrade , Sávio M. Lopes , Rafael A. Raimundo , Ricardo F. Alves , Allan J.M. Araújo , Pamala S. Vieira , Fausthon F. da Silva , Marco A. Morales , Daniel A. Macedo , Duncan P. Fagg , Glageane da S. Souza","doi":"10.1016/j.mssp.2025.109643","DOIUrl":"10.1016/j.mssp.2025.109643","url":null,"abstract":"<div><div>This work reports new Ni,Co-oxides based nanoparticles as electrocatalysts for the Oxygen Evolution Reaction (OER), considering the growing demand for renewable energy, as well as the search for sustainable alternatives in the production of nanoparticle materials. Ni,Co-based nanoparticles were obtained via proteic sol-gel method, with Agar-Agar from red seaweed (<em>Rhodophyta</em>) as polymerizing agent, and characterized by using X-ray diffraction techniques (including Rietveld refinement), Field emission scanning electron microscopy and vibrational spectroscopy (infrared and Raman). All structural analyses indicated that the crystalline phases NiO, Ni<sub>0.9</sub>Co<sub>0.1</sub>O and (Ni,Co)O-Co<sub>3</sub>O<sub>4</sub> were obtained. Electrochemical techniques were applied to investigate the OER electrocatalytic performance, with the (Ni,Co)O-Co<sub>3</sub>O<sub>4</sub> electrocatalyst showing the lowest overpotential (356 mV <em>vs.</em> RHE at J = 10 mA cm<sup>−2</sup>) and a Turnover Frequency (TOF) of 9.97 × 10<sup>−3</sup> mol O<sub>2</sub> s<sup>−1</sup> at just 500 mV <em>vs.</em> RHE. Furthermore, all prepared electrocatalysts showed excellent chemical stability up to 15 h, as indicated in chronopotentiometry data.</div></div>","PeriodicalId":18240,"journal":{"name":"Materials Science in Semiconductor Processing","volume":"195 ","pages":"Article 109643"},"PeriodicalIF":4.2,"publicationDate":"2025-05-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143903651","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

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Flexible organic semiconductor switching enabled by the magnetoresistance effect 由磁阻效应实现的柔性有机半导体开关

IF 4.2 3区工程技术

Materials Science in Semiconductor Processing Pub Date : 2025-05-03 DOI: 10.1016/j.mssp.2025.109610

Amos Bardea , Fernando Patolsky , Roshlin Kiruba , Igor Lapsker , Paul Ben Ishai

{"title":"Flexible organic semiconductor switching enabled by the magnetoresistance effect","authors":"Amos Bardea , Fernando Patolsky , Roshlin Kiruba , Igor Lapsker , Paul Ben Ishai","doi":"10.1016/j.mssp.2025.109610","DOIUrl":"10.1016/j.mssp.2025.109610","url":null,"abstract":"<div><div>Recent advancements in material sciences have placed significant emphasis on the development of materials with smart properties and functionalities, that can be controlled or adjusted by external stimuli. We present a study of polydimethylsiloxane/polypyrrole/Ni nanoparticle composites as testbeds for Organic Magnetoresistance (OMAR) application. The magnetoresistance sensitivity, (ΔR/R<sub>0</sub>), of flexible organic composites at room temperature typically falls below one, for millitesla-scale magnetic fields. Our experiments demonstrate that the fabricated films exhibit a notable magnetoresistance effect, with relative electrical resistance changes of 5.2, under a weak magnetic field of 10<sup>−2</sup> T under ambient conditions. We show that these composite films are flexible, conductive, and exhibit heighted OMAR capabilities, with switching rates stable up to 5 kHz. The magnetic permeability of the samples is investigated using a bespoke time-domain magnetic spectrometer, revealing enhanced diamagnetic behavior. This underpins the magnetic resistance of the composite, because of spin injection and consequent interaction with the magnetic field. This study introduces the first example of a single flexible film structure capable of detecting weak magnetic fields, as low as 10<sup>−2</sup> T at room temperature, surpassing previously reported MR values below one in the literature. These promising organomagnetic self-standing films hold significant potential for various future applications, including magnetic switches, sensors, e-skin devices, transistors, and organic spintronic devices.</div></div>","PeriodicalId":18240,"journal":{"name":"Materials Science in Semiconductor Processing","volume":"195 ","pages":"Article 109610"},"PeriodicalIF":4.2,"publicationDate":"2025-05-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143899625","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Atomic layer deposition of Ru/rutile Al-TiO2/Ru layer stacks for high-performance silicon capacitors 高性能硅电容器中Ru/金红石Al-TiO2/Ru层堆的原子层沉积

IF 4.2 3区工程技术

Materials Science in Semiconductor Processing Pub Date : 2025-05-03 DOI: 10.1016/j.mssp.2025.109646

Taehyun Kim , Da Eun Lim , Hyeongjun Kim , Hyunmin Nah , Heun Park , Yoon Jang Chung , Woongkyu Lee

引用次数: 0

Enhanced resistive switching characteristics in p/CuO-n/ZnO bilayer structure memory cells p/CuO-n/ZnO双层结构记忆电池的增强电阻开关特性

IF 4.2 3区工程技术

Materials Science in Semiconductor Processing Pub Date : 2025-05-03 DOI: 10.1016/j.mssp.2025.109624

Xiang Luo, Ping He, Jiahao Zhang, Honglong Zheng, Xianpei Ren, Fang Ling, JianBo Yang, Yuanping Liu, Rui Wen, Qiang Li

{"title":"Enhanced resistive switching characteristics in p/CuO-n/ZnO bilayer structure memory cells","authors":"Xiang Luo, Ping He, Jiahao Zhang, Honglong Zheng, Xianpei Ren, Fang Ling, JianBo Yang, Yuanping Liu, Rui Wen, Qiang Li","doi":"10.1016/j.mssp.2025.109624","DOIUrl":"10.1016/j.mssp.2025.109624","url":null,"abstract":"<div><div>In this paper, the resistive switching characteristics and underlying mechanisms of bilayer p/CuO-n/ZnO device are comprehensively investigated. Owing to the presence of p-n junction, the current-voltage (I-V) curve of the bilayer CuO-ZnO device exhibits asymmetric characteristics. To elucidate the internal resistive switching mechanisms, a dual model incorporating p-n junction interfacial effects and oxygen-vacancy-filamentary conduction is proposed. Compared with the single layer ZnO device, the bilayer CuO-ZnO device exhibits enhanced retention and endurance performances. This improvement is attributed to the built-in electric field at the p-n junction, which stabilizes charge carrier dynamics, and the ordered migration of oxygen vacancies at the interface, which suppresses the random formation of conductive filaments. Furthermore, the I-V curve of bilayer CuO-ZnO device exhibits a remarkable photoelectric response under ultraviolet (UV, 365 nm) illumination. This finding offers a valuable reference for optically controlled resistive switching behavior of ZnO based memory cells, thereby potentially contributing to the development of the related optoelectronic applications.</div></div>","PeriodicalId":18240,"journal":{"name":"Materials Science in Semiconductor Processing","volume":"195 ","pages":"Article 109624"},"PeriodicalIF":4.2,"publicationDate":"2025-05-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143902365","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0