Materials Science in Semiconductor Processing最新文献

{"title":"Polar and non-polar growth of BeMgZnO quaternary alloy thin films for deep ultraviolet photodetectors","authors":"Teng Zhang,&nbsp;Yuan Zhang,&nbsp;Dahua Ren,&nbsp;Yongdan Zhu,&nbsp;Jinqiao Yi","doi":"10.1016/j.mssp.2025.110152","DOIUrl":"10.1016/j.mssp.2025.110152","url":null,"abstract":"<div><div>This study demonstrates the successful growth of high-quality BeMgZnO epitaxial thin films with distinct crystallographic orientations (polar <em>c</em>-plane and nonpolar <em>m</em>-plane) for advanced deep-ultraviolet photodetection applications. Under 5 V bias, the developed Au/BeMgZnO/Au metal-semiconductor-metal photodetectors achieve ultra-low dark current (19.5 pA), high on/off ratio (3.11 × 10³), fast response speed (rise/recovery times: 2.81 s/0.22 s), and superior spectral selectivity (<em>R</em>₂₈₀/<em>R</em>₄₀₀ &gt; 10³). The incorporation of Be and Mg effectively suppresses oxygen vacancy formation in ZnO lattices, reducing dark currents by six orders of magnitude (from mA to pA) compared to pure ZnO detectors while mitigating persistent photoconductivity. Comparative analysis reveals orientation-dependent dynamics: polar <em>c</em>-BeMgZnO detector exhibit faster recovery due to defect-assisted recombination at grain boundaries, enhancing photogenerated carrier annihilation. In contrast, non-polar <em>m</em>-BeMgZnO detector demonstrates significantly higher responsivity, attributed to the synergistic effect of intrinsic <em>c</em>-axis polarization field and applied electric field, which facilitates carrier separation and transport. Remarkably, the nonpolar m-plane configuration enables self-powered operation through polarization-induced built-in potential, achieving sensitive photoresponse under zero bias. These results establish crystallographic orientation control as a key determinant for optimizing detector performance, particularly in polarization-engineered energy-efficient UV photodetectors.</div></div>","PeriodicalId":18240,"journal":{"name":"Materials Science in Semiconductor Processing","volume":"202 ","pages":"Article 110152"},"PeriodicalIF":4.6,"publicationDate":"2025-10-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145322199","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Improved transistor stability against hydrogen by fluorine doping in indium-gallium-zinc-oxide front and back channels","authors":"Changjun No,&nbsp;Chang-Yun Na,&nbsp;Sung M. Cho","doi":"10.1016/j.mssp.2025.110147","DOIUrl":"10.1016/j.mssp.2025.110147","url":null,"abstract":"<div><div>The impact of fluorine (F) doping on the hydrogen stability of indium-gallium-zinc oxide (IGZO) thin-film transistors (TFTs) was systematically investigated. Enhanced hydrogen resistance was achieved by independently introducing F into both the front and back channels of IGZO. The role of F was elucidated by analyzing changes in device characteristics under directional hydrogen exposure, depending on the specific F-doping location. F atoms in IGZO preferentially attract and immobilize incoming hydrogen, effectively mitigating its adverse impact on electrical performance. Notably, even F doping confined to the back channel—remote from the conductive front channel—yielded substantial improvements in stability, while additional doping in the front channel provided further enhancement. These findings experimentally demonstrate that dual-side F-doping in IGZO significantly enhances the hydrogen tolerance of TFTs.</div></div>","PeriodicalId":18240,"journal":{"name":"Materials Science in Semiconductor Processing","volume":"202 ","pages":"Article 110147"},"PeriodicalIF":4.6,"publicationDate":"2025-10-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145322196","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Crack-free thick α-Ga2O3 films grown on Ni–Pd-CNT nanoalloy masks","authors":"An-Na Cha ,&nbsp;Gieop Lee ,&nbsp;Hyunggu Kim ,&nbsp;Chaewon Seong ,&nbsp;Hyojung Bae ,&nbsp;Hokyun Rho ,&nbsp;Vishal Burungale ,&nbsp;Young-Boo Moon ,&nbsp;Jun-Seok Ha","doi":"10.1016/j.mssp.2025.110144","DOIUrl":"10.1016/j.mssp.2025.110144","url":null,"abstract":"<div><div>We report a Ni–Pd–CNT-based nanoalloy mask that improves the crystalline quality of α-Ga₂O₃ epilayers grown via halide vapor phase epitaxy (HVPE). Conventional heteroepitaxy of α-Ga₂O₃ on sapphire substrates typically results in high dislocation densities due to lattice and thermal expansion mismatches. To address this problem, a Ni–Pd–CNT nanoalloy layer was deposited on a (0001)-oriented α-Ga₂O₃ buffer layer using electroless plating and spray coating, and α-Ga₂O₃ was regrown for 15 min. Among the plating durations tested (20, 40, and 60 s), the 40 s condition yielded the thickest epilayer (∼11 μm), the lowest etch pit density (∼4.8 × 10⁷ cm⁻²), and the narrowest X-ray diffraction rocking curve for the asymmetric (10–14) reflection.</div><div>AFM and SEM analyses confirmed improved surface uniformity and reduced tilting of seed crystals under these conditions. All samples exhibited high optical transmittance (&gt;80 %) in the visible region and a direct bandgap of ∼5.13 eV, which indicates that the optical properties remained stable regardless of the Ni content. These results show that the Ni–Pd–CNT-assisted nano-epitaxial lateral overgrowth (nano-ELOG) approach effectively reduces threading dislocation density while preserving wide bandgap transparency. This method offers a low-cost, scalable route for producing high-quality α-Ga₂O₃, with strong potential for next-generation power electronics and UV optoelectronic devices.</div></div>","PeriodicalId":18240,"journal":{"name":"Materials Science in Semiconductor Processing","volume":"202 ","pages":"Article 110144"},"PeriodicalIF":4.6,"publicationDate":"2025-10-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145322201","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Study on the nano-cutting mechanism of ion-implanted amorphous layers in single-crystal silicon with insufficient amorphization effects","authors":"Guilian Wang ,&nbsp;Chaoyang Wang ,&nbsp;Donghao Liu ,&nbsp;Zhiguo Wang ,&nbsp;Hang Zhang","doi":"10.1016/j.mssp.2025.110143","DOIUrl":"10.1016/j.mssp.2025.110143","url":null,"abstract":"<div><div>Ion implantation technology can create an amorphous layer on the surface of single-crystal silicon to improve the efficiency and precision of nano-cutting processes. However, incomplete amorphization at the end of ion implantation may result in residual crystalline regions within the amorphous layer. In this study, a nano-cutting model incorporating a single residual crystalline protrusion within an amorphous layer was developed using molecular dynamics simulations. The influence of such residual crystalline protrusions on material distribution, phase transformation, structural damage, cutting forces, and temperature evolution during the nano-removal process was systematically investigated. Simulation results indicate that the crystal protrusions in the amorphous layer hinder the plastic flow of the amorphous material. Furthermore, the removal of non-uniform brittle fractures and protrusions during the cutting process also increases the cutting force and cutting temperature. The presence of protrusions also leads to an increase in stress during the cutting process and an expansion of local stress concentration areas within the crystalline material. This study offers theoretical support for optimizing the removal process of the ion implantation-modified layer in single-crystal silicon.</div></div>","PeriodicalId":18240,"journal":{"name":"Materials Science in Semiconductor Processing","volume":"202 ","pages":"Article 110143"},"PeriodicalIF":4.6,"publicationDate":"2025-10-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145322193","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Enhanced nonlinear optical response of Zn–Ni alloy nanostructures on ITO for optical limiting applications","authors":"K.B. Manjunatha ,&nbsp;Ramesh S. Bhat ,&nbsp;S. Kshama Shetty ,&nbsp;Dileep Ramakrishna ,&nbsp;Yogesh Kalegowda ,&nbsp;Poornesh P ,&nbsp;Saikat Chattopadhyay ,&nbsp;N. Selvakumar ,&nbsp;Harish C. Barshilia","doi":"10.1016/j.mssp.2025.110120","DOIUrl":"10.1016/j.mssp.2025.110120","url":null,"abstract":"<div><div>This study reports the fabrication of Zn–Ni alloy nanostructures (ZN) on indium tin oxide (ITO) substrates via electrodeposition and investigates their nonlinear optical (NLO) and optical limiting behavior. Despite the promise of Zn-based nanostructures in NLO devices, their performance remains limited by weak field localization and inadequate surface engineering. This work addresses the knowledge gap by investigating how Ni alloying and surface oxidation in Zn–Ni nanostructures enhance local field effects and defect-mediated transitions, leading to improved nonlinear optical and optical limiting responses. Structural and spectroscopic analyses confirmed the γ-Zn–Ni alloy phase, ZnO/NiO surface oxides, and nanowall network morphologies. The nanostructures exhibited tunable band gaps between 2.95 and 3.17 eV, and high visible photoluminescence from defect states. The presence of surface oxidation suggests that the observed increase in local field effects may result from the high surface oxide density, as confirmed by Raman and photoluminescence data, and defect-mediated transitions, contributing to the observed strong optical nonlinearities. Specific NLO results include a two-photon absorption coefficient of ∼10⁻³ cm/W under continuous-wave excitation and a three-photon absorption coefficient of ∼10⁻²² m³/W² under nanosecond pulsed excitation, which are larger than/comparable to typical ZnO-based systems reported in literature. Optical limiting thresholds were also determined and compared with reported oxide nanostructures, demonstrating competitive or improved performance. These findings highlight the novelty of correlating alloy composition, nanowall morphology, and surface oxide density with enhanced third-order nonlinearities and efficient optical limiting, establishing Zn–Ni nanostructures as promising candidates for photonic and laser-protection devices.</div></div>","PeriodicalId":18240,"journal":{"name":"Materials Science in Semiconductor Processing","volume":"202 ","pages":"Article 110120"},"PeriodicalIF":4.6,"publicationDate":"2025-10-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145322110","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Reliable fabrication of vanadium-based films and their visible-infrared spectral compatibility modulation","authors":"Wenqi Xiong ,&nbsp;Kaixi Bi ,&nbsp;Longhao Liu ,&nbsp;Guangchen Yin ,&nbsp;Hao Liu ,&nbsp;Donghui Huang ,&nbsp;Jialiang Chen ,&nbsp;Xinyu liang ,&nbsp;Linyu Mei ,&nbsp;Xiujian Chou","doi":"10.1016/j.mssp.2025.110109","DOIUrl":"10.1016/j.mssp.2025.110109","url":null,"abstract":"<div><div>Vanadium pentoxide (V₂O₅) films exhibit rich electrochemical activity and color variation when combined with Li⁺ intercalation. Efficient fabrication of these films is essential for the development of smart optoelectronic displays. This study employs an electrochemical deposition method to achieve low-cost, large-area growth of V₂O₅ films on multiple substrates at room temperature. By depositing V₂O₅ films on ITO substrates and using external field-driven electron-proton synergistic operation, six different color states were achieved. The elemental composition and valence states of the films after Li⁺ intercalation were analyzed by transmittance spectral analysis and X-ray photoelectron spectroscopy (XPS). It was quantitatively confirmed that not only V⁴⁺ but also a considerable proportion of V³⁺ was generated in the films under the negative-voltage coloring state, this finding breaks with the conventional knowledge of the coloring end state of V₂O₅ films. Meanwhile, electrochemical Li ⁺ intercalation enables tunable infrared emissivity of the V₂O₅ films, resulting in a temperature difference of ∼7 °C between the positive and negative voltage intercalation states and highlighting their potential application in dynamic visible-infrared camouflage. This visible-to-infrared dual-mode modulation operates independently of ambient temperature and does not rely on VO₂ phase transitions. Combined with photolithographic masks to form optically patterned displays, it provides theoretical and technical support for novel vanadium-based optoelectronic displays.</div></div>","PeriodicalId":18240,"journal":{"name":"Materials Science in Semiconductor Processing","volume":"202 ","pages":"Article 110109"},"PeriodicalIF":4.6,"publicationDate":"2025-10-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145322111","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Assessment of toxicity changes during photocatalytic degradation of antibiotics using T.E.S.T and machine learning","authors":"Qiaoyu Zhang ,&nbsp;Qiao Shen ,&nbsp;Fumin Peng ,&nbsp;Wenjing Bian ,&nbsp;Xu Huang ,&nbsp;Yong Zhang ,&nbsp;Jian Huang ,&nbsp;Hua Zhang ,&nbsp;Tao Luo","doi":"10.1016/j.mssp.2025.110129","DOIUrl":"10.1016/j.mssp.2025.110129","url":null,"abstract":"<div><div>This study selected Doxycycline hydrochloride (DOX) as a representative antibiotic and titanium dioxide nanoparticles (P25) as a typical photocatalyst to investigate the photocatalytic degradation process. The research demonstrates three key innovations: (1) The degradation pathway of DOX by P25 was systematically elucidated through the combination of in situ reactive oxygen species (ROS) verification (confirming the dominant roles of ¹O₂, •O₂^-, and h⁺) and multi-technique intermediate tracking using liquid chromatography-mass spectrometry/two-dimensional correlation spectroscopy (LC-MS/2D-COS). This approach confirmed the direct involvement of ¹O₂, •O₂^-, and h⁺ in the reaction and resolved the sequence of functional group changes. (2) A random forest (RF) model was developed and integrated with T.E.S.T. simulations to construct time-resolved toxicity evolution profiles. The acute toxicity, developmental toxicity, and mutagenicity of intermediates were evaluated using the T.E.S.T. toxicity assessment software. The established RF model demonstrated high prediction accuracy with a coefficient of determination (R²) of 0.932, mean absolute error (MAE) of 0.018, and root mean square error (RMSE) of 0.039. This model enables tracking of photocatalytic intermediate variations and, combined with toxicity simulation, facilitates the prediction of toxicity levels at different degradation stages, thereby deriving toxicity evolution patterns after photocatalytic degradation. (3) This study establishes a novel framework for degradation endpoint optimization through dynamic toxicity prediction, providing a strategic solution for minimizing ecological risks in photocatalytic water treatment.</div></div>","PeriodicalId":18240,"journal":{"name":"Materials Science in Semiconductor Processing","volume":"202 ","pages":"Article 110129"},"PeriodicalIF":4.6,"publicationDate":"2025-10-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145322112","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Facile fabrication of CaAl2O4/Bi2O3: A direct Z-scheme photocatalyst for enhanced photocatalytic degradation of congo red and enrofloxacin","authors":"Ancy Kurian,&nbsp;Shanmugam Sumathi","doi":"10.1016/j.mssp.2025.110139","DOIUrl":"10.1016/j.mssp.2025.110139","url":null,"abstract":"<div><div>Due to the increasing presence of organic pollutants such as dyes and antibiotics in water bodies, there is a pressing need for efficient and sustainable remediation strategies. In this study, a novel CaAl₂O₄/Bi₂O₃ composite photocatalyst was successfully synthesized via a straightforward solid-state grinding method of the individual parent materials. The close interface between CaAl₂O₄ and Bi₂O₃ facilitated direct Z-scheme heterojunction formation, enhancing charge separation while preserving strong redox potential for reactive oxygen species generation. The catalyst demonstrated excellent degradation performance against both congo red dye and enrofloxacin antibiotic under UV and visible light irradiation. Specifically, the composite achieved a degradation efficiency of 96.5 % for congo red within 90 min and 82.6 % for enrofloxacin within 180 min. Trapping experiments identified superoxide radicals and holes as the primary reactive species responsible for pollutant degradation. The catalyst exhibited robust activity across different pollutant types, underscoring its versatility and potential for practical wastewater treatment. These findings provide valuable insights into the rational design of direct Z-scheme photocatalysts through simple synthesis routes and highlight the composites promise for addressing complex environmental contamination.</div></div>","PeriodicalId":18240,"journal":{"name":"Materials Science in Semiconductor Processing","volume":"202 ","pages":"Article 110139"},"PeriodicalIF":4.6,"publicationDate":"2025-10-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145322108","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Grain boundary passivation and crystallographic reorientation in Ni and Ni–N co-doped CuCrO2 thin films: Enhancing electrical properties and NIR transparency via process–structure control","authors":"Jamshina Sanam P.K.,&nbsp;P.P. Pradyumnan","doi":"10.1016/j.mssp.2025.110113","DOIUrl":"10.1016/j.mssp.2025.110113","url":null,"abstract":"<div><div>This work investigates the impact of synthesis parameters and nitrogen co-doping on the structural, optical, and electrical properties of Ni-doped CuCrO<span><math><msub><mrow></mrow><mrow><mn>2</mn></mrow></msub></math></span> thin films, a promising p-type transparent conducting oxide. Ni-doped films were fabricated under varying sputtering conditions, followed by nitrogen annealing and co-doping to assess the role of nitrogen in tailoring film characteristics. Structural studies revealed that film orientation and crystallinity are strongly governed by sputtering power and gas pressure, while nitrogen annealing caused lattice expansion without phase change. Importantly, nitrogen co-doping induced preferential growth along a new crystallographic plane, attributed to altered adatom kinetics and selective surface passivation. EDX confirmed variable Ni diffusivity under nitrogen atmospheres. Electrical analysis showed that nitrogen annealing drastically reduced grain boundary potential barrier height (from 10.5 to 1.23 meV), boosting mobility to 11.12 cm<span><math><msup><mrow></mrow><mrow><mn>2</mn></mrow></msup></math></span>V⁻¹s⁻¹ at 300 K. In contrast, nitrogen co-doping preserved mobility but significantly increased carrier concentration, yielding the highest electrical conductivity of 9159 S/m among all samples. Optical studies revealed that transmittance in the near-infrared region was highly sensitive to sputtering conditions, with a maximum of 84.4% at 2000 nm. Nitrogen annealing slightly reduced transmittance without altering the band gap, whereas Ni–N co-doping triggered a Burstein–Moss shift, widening the band gap via carrier density enhancement. These results demonstrate the synergistic role of process tuning.</div></div>","PeriodicalId":18240,"journal":{"name":"Materials Science in Semiconductor Processing","volume":"202 ","pages":"Article 110113"},"PeriodicalIF":4.6,"publicationDate":"2025-10-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145322109","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Two-stage synthesis of Bournonite (CuPbSbS3) thin films for photovoltaic applications","authors":"U. Chalapathi ,&nbsp;K. Ashok ,&nbsp;M. Seshadri ,&nbsp;Radhalayam Dhanalakshmi ,&nbsp;Venkateswarlu Gonuguntla ,&nbsp;Adem Sreedhar ,&nbsp;Vasudeva Reddy Minnam Reddy ,&nbsp;Sambasivam Sangaraju ,&nbsp;Mohd Shkir ,&nbsp;Si-Hyun Park","doi":"10.1016/j.mssp.2025.110122","DOIUrl":"10.1016/j.mssp.2025.110122","url":null,"abstract":"<div><div>Bournonite (CuPbSbS₃) exhibits promising characteristics as a photovoltaic light harvester. However, the solution-based methods commonly employed for its synthesis and device fabrication have prompted the exploration of physical vapor deposition (PVD) techniques. In this study, CuPbSbS₃ thin films and corresponding solar cells were synthesized using a two-stage approach: thermal evaporation of Sb/Cu/Pb/Cu metal precursors followed by sulfurization. The effect of sulfurization duration (5–30 min) on the growth and physical properties of the Bournonite thin films was systematically investigated. Films sulfurized for a short duration of 5 min exhibited minor PbS and CuSbS₂ secondary phases, crystallite sizes of approximately 68.1 nm, and grain sizes ranging from 0.5 to <span><math><mrow><mn>1</mn><mo>.</mo><mn>0</mn><mspace></mspace><mi>μ</mi><mi>m</mi></mrow></math></span>. Increasing the sulfurization duration to 10–30 min eliminated the PbS secondary phase, improved stoichiometry and crystallinity (up to 71 nm), and resulted in larger grains (1.0–<span><math><mrow><mn>1</mn><mo>.</mo><mn>5</mn><mspace></mspace><mi>μ</mi><mi>m</mi></mrow></math></span>). The films demonstrated high optical absorption coefficients exceeding 10⁴ cm⁻¹ in the visible region and a direct bandgap of 1.37–1.41 eV. Thin-film solar cells fabricated using these absorber layers showed a decrease in performance with longer sulfurization times, attributed to reduced carrier mobility. As the sulfurization duration increased from 5 to 30 min, the device efficiency dropped from 0.13% to 0.08%, short-circuit current density (J<span><math><msub><mrow></mrow><mrow><mi>s</mi><mi>c</mi></mrow></msub></math></span>) from 1.59 to 1.28 mA/cm², open-circuit voltage (V<span><math><msub><mrow></mrow><mrow><mi>o</mi><mi>c</mi></mrow></msub></math></span>) from 269.1 to 220.9 mV, and fill factor (FF) from 29.6% to 26.6%. These promising initial results establish a foundation for the development of high-efficiency Bournonite thin-film solar cells using PVD techniques.</div></div>","PeriodicalId":18240,"journal":{"name":"Materials Science in Semiconductor Processing","volume":"202 ","pages":"Article 110122"},"PeriodicalIF":4.6,"publicationDate":"2025-10-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145322101","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}