Materials Science in Semiconductor Processing最新文献

{"title":"Optical properties of photonic crystal balls of different sizes synthesized using a microfluidic device","authors":"Taiki Maekawa ,&nbsp;Yuto Ikeda ,&nbsp;Hiroto Fukuma ,&nbsp;Toshihide Horikawa ,&nbsp;Geoffrey I.N. Waterhouse ,&nbsp;Kei-ichiro Murai ,&nbsp;Toshihiro Moriga","doi":"10.1016/j.mssp.2025.109716","DOIUrl":"10.1016/j.mssp.2025.109716","url":null,"abstract":"<div><div>In this study, a microfluidic device was used to synthesize photonic crystal balls (PCBs, i.e., spherical colloidal crystals) from polystyrene colloid solutions. Water-in-oil (W/O) droplets containing monodispersed polystyrene colloids were formed using a T-junction microfluidic device. By controlling the flow rate of the continuous oil phase, the droplet diameters could be adjusted between 220 and 410 μm. The droplets had excellent monodispersity, with a coefficient of variation (C_v) in size of less than 2 %. By carefully evaporating water from the droplets, PCBs with vivid structural colors and photonic bandgaps (PBGs) were obtained at visible wavelengths. By increasing the diameter of the polystyrene colloids used to construct the PCBs, the PBG wavelengths along the [111], [220], and [222] directions were red-shifted, which was consistent with the modified Bragg's law. The spherical shape of the photonic crystal spheres caused the PBGs to exhibit almost no dependence on the angle of light incidence, exhibiting consistent backward scattering of structural colors at all angles of light incidence (unlike polystyrene colloidal crystal thin films, for which a strong dependence of the PBG on the incident angle of light was observed). These results provide valuable insights into the optical properties of PCBs.</div></div>","PeriodicalId":18240,"journal":{"name":"Materials Science in Semiconductor Processing","volume":"197 ","pages":"Article 109716"},"PeriodicalIF":4.2,"publicationDate":"2025-05-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144138684","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"CuPt nano-alloy as bifunctional electrocatalyst for N2H4 oxidation-assisted H2 generation and multifunctional sensor materials","authors":"Xinmei Liu,&nbsp;Boyang Liu,&nbsp;Xingwang Sun,&nbsp;Wenlong Yang","doi":"10.1016/j.mssp.2025.109694","DOIUrl":"10.1016/j.mssp.2025.109694","url":null,"abstract":"<div><div>This work combined lattice strain effect and surfactant-free interface of CuPt nanoalloy to achieve the low-potential catalytic H₂ Evolution Reaction (HER) and Hydrazine Oxidation Reaction (HzOR). Compared to the electro-catalysis of oxygen evolution reaction, the CuPt nano-alloy exhibited a lower potential in the electro-catalysis of HzOR. The voltage required for N₂H₄ oxidation-assisted H₂ generation by surfactant-free Cu₈₃Pt₁₇ nano-alloy was 0.28 V (at 10 mA/cm²), which was only 14.97 % of that needed for H₂O splitting (1.87 V at 10 mA/cm²). Moreover, the ligand-free surface maximized the interfacial contact area of CuPt nanoalloy with reactants, thereby enhancing both its stability and electrocatalytic activity in both the cathode and anode reactions. As compared with the CuPt nano-alloy synthesized by using a surfactant (Un-CuPt), the surfactant-free Cu₈₃Pt₁₇ nano-alloy in this work could achieve a 39.1 % reduction in the working voltage for N₂H₄ splitting. When the output current density reaches 100 mA/cm², the corresponding working potential for HzOR was 435.31 mV <em>vs</em> RHE. After a 72-h for HzOR, the anode potential (at 10 mA/cm²) for the surfactant-free Cu₈₃Pt₁₇ nano-alloy increased by only 3.97 % (158.8 mV–165.1 mV), indicating its promising stability. As a multifunctional electrocatalyst, the CuPt nano-alloy demonstrated a promising performance in the construction of H₂O₂ and NaNO₂ sensors. This work successfully introduced a bifunctional electrocatalyst for N₂H₄ oxidation-assisted H₂ generation, addressing the inferior catalytic activity of commercial Pt/C in HzOR and its inadequate stability. Considering the relatively low cost of Cu, the obtianed results would pave a promising research avenue for designing highly efficient electrocatalysts for H₂ generation or constructing sensors.</div></div>","PeriodicalId":18240,"journal":{"name":"Materials Science in Semiconductor Processing","volume":"197 ","pages":"Article 109694"},"PeriodicalIF":4.2,"publicationDate":"2025-05-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144134226","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Studying the effect of CuInSe2 quantum dot size on the distribution of surface defects using positron annihilation spectroscopy","authors":"A.E. Elsheikh ,&nbsp;M. Ghali ,&nbsp;M.M. Mosaad ,&nbsp;T. Sharshar","doi":"10.1016/j.mssp.2025.109715","DOIUrl":"10.1016/j.mssp.2025.109715","url":null,"abstract":"<div><div>In this work, chalcopyrite CuInSe₂ (CIS) quantum dots (QDs) with an average size of 3.3 and 7.6 nm as well as CIS nanoparticles (NPs) with an average size of 11.7 nm were synthesized using a hot injection method to study the relationship between particle size and surface defect density. X-ray diffraction (XRD), Raman spectroscopy, transmission electron microscopy (TEM), and UV–Vis spectroscopy were used to characterize the synthesized samples. The UV–Vis absorption spectra reveal that by changing the size of the CIS particles, the band gap energy of the CIS particles can be precisely tuned. Furthermore, the dependence of surface defect density on particle size was explored using positron annihilation spectroscopy (PAS). The measured values of the lifetime component <em>τ</em>₂ related to positrons annihilating mainly at the surfaces of the 3.3 and 7.6 nm CIS QDs samples were found to be 428.3 ± 1.0 and 426.3 ± 1.8 ps, respectively. On the other hand, the <em>τ</em>₂ value for 11.7 nm CIS NPs is 376.6 ± 1.1 ps. These <em>τ</em>₂ values are higher than those of positrons annihilated at vacancy defects in CIS nanocrystals due to the relatively large contribution of positrons annihilated at surface defects of CIS QDs. The results of correlation studies reveal that the dependence of the size and concentration of surface defects on the size of CIS particles is inverse.</div></div>","PeriodicalId":18240,"journal":{"name":"Materials Science in Semiconductor Processing","volume":"197 ","pages":"Article 109715"},"PeriodicalIF":4.2,"publicationDate":"2025-05-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144134228","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Formation time optimization and evaluation of nanoporous GaN as an optically active medium for device applications","authors":"Jungwook Min ,&nbsp;Tae-Yong Park ,&nbsp;Juchan Hwang ,&nbsp;Hyeongmun Kim ,&nbsp;Ibrahim G. Alsayoud ,&nbsp;Redha H. Al Ibrahim ,&nbsp;Jongmin Kim ,&nbsp;Boon S. Ooi ,&nbsp;Chul Kang ,&nbsp;Kwangwook Park","doi":"10.1016/j.mssp.2025.109696","DOIUrl":"10.1016/j.mssp.2025.109696","url":null,"abstract":"<div><div>Nanoporous GaN (NP-GaN) embeds sub-nanoscale air gaps (n ≈ 1) that greatly expand refractive-index modulation for ultra-thin distributed Bragg reflectors (DBRs), boost surface area for photoelectrochemical (PEC) reactions, alleviate substrate lattice constraints to enable high-In red light emitting diodes (LEDs), and have even been applied in photovoltaic cells. Yet its use as an optically active medium is scarcely reported, making comprehensive evaluation of its optical and structural properties imperative for broader device integration. Herein, we report the potential of NP-GaN as an optically active medium for device applications by evaluating the optical and structural properties of NP-GaN samples etched for durations ranging from 5 to 15 min. Our results show that the average pore diameter does not increase significantly when the etching duration exceeds 10 min due to pore wall passivation by Ga-related byproducts. Meanwhile, the highest carrier lifetime and the strongest integrated near-band edge (NBE) intensity were observed in the NP-GaN sample etched for 10 min, which was attributed to pore branching. Overall, a 10 min etching duration, resulting in superior optical properties, was optimal for the formation of NP-GaN. With its advantages in optical properties with a higher active surface area compared to bulk thin films, NP-GaN optimization of etching duration provides insight into the realization of various device applications. This is not limited to GaN but extends to other nitrides such as InGaN and AlGaN, broadening the available bandgap range.</div></div>","PeriodicalId":18240,"journal":{"name":"Materials Science in Semiconductor Processing","volume":"197 ","pages":"Article 109696"},"PeriodicalIF":4.2,"publicationDate":"2025-05-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144134224","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Hydrothermally synthesized g-C3N4/InVO4 photocatalyst for effective potassium butyl xanthate pollutant degradation and photoelectrochemical analysis","authors":"Govinda Dharmana ,&nbsp;Sang Ho Byun ,&nbsp;Thirumala Rao Gurugubelli ,&nbsp;Won Young Jang ,&nbsp;M.C. Rao ,&nbsp;Ravindranadh Koutavarapu ,&nbsp;Jaesool Shim","doi":"10.1016/j.mssp.2025.109711","DOIUrl":"10.1016/j.mssp.2025.109711","url":null,"abstract":"<div><div>In this investigation, graphitic carbon nitride g-C₃N₄ (gCN), Indium vanadate InVO₄ (IV) and their compositional ratio nanocomposites (NCs) are fabricated by a facile one-step hydrothermal method for the estimation of degradation efficiency of potassium butyl xanthate (PBX) pollutant in mineral processing wastewater treatment under visible light irradiation. The g-C₃N₄/InVO₄ (gCNIV) heterostructure was carefully engineered to exploit the synergistic interaction between g-C₃N₄'s high chemical stability and InVO₄'s narrow bandgap (∼2.281 eV), forming an efficient type-II band alignment that promotes effective charge carrier separation and enhanced light absorption. Comprehensive characterization including XRD, SEM, XPS, and UV–Vis DRS confirmed the successful formation of the heterojunction and its optimized optical and structural properties. The optimized gCNIV-7.5 composite demonstrated exceptional photocatalytic performance, achieving 98.16 % degradation of PBX within 60 min, significantly outperforming individual components. Importantly, the composite exhibited high apparent quantum efficiency (AQE) of 33.42 %, underscoring its superior photon-to-chemical conversion capability. Stability tests, radical scavenging experiments, and photoelectrochemical analyses further verified the enhanced photocatalytic mechanism and durability of the gCNIV heterostructure. These findings establish gCNIV as a highly promising and efficient visible-light-driven photocatalyst for environmental remediation applications.</div></div>","PeriodicalId":18240,"journal":{"name":"Materials Science in Semiconductor Processing","volume":"197 ","pages":"Article 109711"},"PeriodicalIF":4.2,"publicationDate":"2025-05-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144134168","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Augmented photocatalytic performance of Z-Scheme S-doped CeO2/CdWO4 heterostructures for dye degradation","authors":"K. Ramesh ,&nbsp;B. Ashok ,&nbsp;D. Madhu ,&nbsp;T. Nagesh ,&nbsp;Raghavendra Garlapally ,&nbsp;G. Upender","doi":"10.1016/j.mssp.2025.109704","DOIUrl":"10.1016/j.mssp.2025.109704","url":null,"abstract":"<div><div>The CeO_2-xS_x/CdWO₄ (x = 0.05, 0.1, 0.2) heterostructures (HSs) were synthesized through calcination where CeO_2-xS_x and CdWO₄ were synthesized using the hydrothermal method. These were extensively characterized through various techniques such as XRD, FESEM, EDX, HRTEM, UV–vis DRS, FTIR, Raman, XPS, EPR, PL, BET and electrochemical impedance spectroscopy (EIS) studies. The XRD analysis asserted that the cubic and tetragonal crystal structure of CeO_1.9S_0.1 and CdWO₄, respectively. HRTEM images confirmed the hexagonal and nanorod morphology for CeO_1.9S_0.1 and CdWO₄, respectively. The photocatalytic performance of all the compounds was assessed using two vital textile dyes such as Rhodamine B (Rh B), Methylene Blue (MB) and antibiotic Ciprofloxacin (CIP) under UV light. The specific surface areas (BET) of CeO_1.9S_0.1, CdWO₄ and CeO_1.9S_0.1/CdWO₄ were measured to be 72.34, 5.86 and 45.64 cm²/g. The band potentials of CeO_1.9S_0.1 and CdWO₄ were estimated through Mott-Schottky plots. Notably, the CeO_1.9S_0.1/CdWO₄ (1:1 wt%) HS demonstrated superior photocatalytic degradation (PCD) and achieved an efficient degradation of 95 %, 93 % and 59 % within 120 min for Rh B, MB and CIP, respectively. The improved PCD of HSs can be attributed to the efficient separation of charge carriers facilitated via Z-scheme between CeO_2-xS_x and CdWO₄. Scavenger studies further demonstrated that OH^• and ^•O₂⁻ radicals were the primary agents accountable for the degradation of Rh B and MB. The stability studies conducted on CeO_1.9S_0.1/CdWO₄ HS over four cycles indicated that CeO_1.9S_0.1/CdWO₄ HS compound has more structural stability and could be potential candidate for environmental remediation.</div></div>","PeriodicalId":18240,"journal":{"name":"Materials Science in Semiconductor Processing","volume":"197 ","pages":"Article 109704"},"PeriodicalIF":4.2,"publicationDate":"2025-05-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144134225","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Evolution of structural and morphological properties in GaN films on Si and glass substrates","authors":"Barbara S. Damasceno ,&nbsp;Isabela M. Horta ,&nbsp;Kevin M. Wyss ,&nbsp;James M. Tour ,&nbsp;Argemiro S. da Silva Sobrinho ,&nbsp;Andre L. de J. Pereira ,&nbsp;Douglas M.G. Leite","doi":"10.1016/j.mssp.2025.109693","DOIUrl":"10.1016/j.mssp.2025.109693","url":null,"abstract":"<div><div>This study investigates the influence of thickness on the structure and morphology of sputtered wurtzite GaN thin films and evaluates their potential as piezoelectric materials for surface acoustic wave (SAW) devices. High-quality GaN films were deposited on Si(100) and glass substrates via reactive magnetron sputtering under optimized conditions. X-ray diffractometry (XRD), Raman spectroscopy, and transmission electron microscopy (TEM) analysis confirmed a preferential c-axis orientation. A detailed assessment of the crystalline quality and structural properties revealed that films grown for 6 h on Si substrates exhibited superior crystallinity and lower defect density. However, increasing film thickness led to higher surface roughness, which may impact SAW device performance. These findings highlight the viability of sputtered GaN films for SAW applications, provided that deposition parameters are carefully controlled to balance crystallinity and surface roughness. This work demonstrates the potential of cost-effective sputtering technique for producing GaN films suitable for high-frequency SAW devices.</div></div>","PeriodicalId":18240,"journal":{"name":"Materials Science in Semiconductor Processing","volume":"197 ","pages":"Article 109693"},"PeriodicalIF":4.2,"publicationDate":"2025-05-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144138763","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Synthesis, characterization, and photocatalytic degradation of methylene blue dye using Bi2S3/WS2/gC3N4-based heterojunction nanocomposite","authors":"Priyanka Jangra ,&nbsp;Preeti Kumari ,&nbsp;Surender Kumar Sharma ,&nbsp;Kamlesh Yadav ,&nbsp;Chandni Devi ,&nbsp;Gaurav Kumar Yogesh","doi":"10.1016/j.mssp.2025.109710","DOIUrl":"10.1016/j.mssp.2025.109710","url":null,"abstract":"<div><div>This study synthesized gC₃N₄-supported Bi₂S₃/WS₂ heterojunction nanocomposite using a simple hydrothermal method for degrading the methylene blue (MB) dye under natural sunlight. The as-synthesized ternary Bi₂S₃/WS₂/gC₃N₄ nanocomposite was characterized using structural, morphological, and spectroscopic techniques, revealing the successful synthesis of WS₂-decorated Bi₂S₃ nanorods supported by gC₃N₄ carbon matrix. The surface chemistry and porosity analysis display the mesoporous nature, which results in increased photocatalytic active sites for MB dye under sunlight for the ternary Bi₂S₃/WS₂/gC₃N₄ nanocomposite. The photocatalytic activity of pristine Bi₂S₃ was increased from 32 % to 82 % for 180 min by natural light exposure, with the induction of WS₂ nanostructure and gC₃N₄ carbon support to Bi₂S₃ nanorods. The scavenger test results show the formation of free radical factors such as <span><math><mrow><msup><mi>h</mi><mo>+</mo></msup></mrow></math></span>, O²⁻, and ^•OH, which are crucial factors for improving the degradation process. The Bi₂S₃/WS₂/gC₃N₄ nanocomposite photocatalyst stability remains at 45.6 % even after three repetitive cycles of MB dye degradation.</div></div>","PeriodicalId":18240,"journal":{"name":"Materials Science in Semiconductor Processing","volume":"197 ","pages":"Article 109710"},"PeriodicalIF":4.2,"publicationDate":"2025-05-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144134227","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Improving the performance of Al/NiO Schottky-barrier diodes by inserting an introduced-oxygen MgO layer","authors":"Jun-Dar Hwang,&nbsp;Nai-Hao Jheng","doi":"10.1016/j.mssp.2025.109708","DOIUrl":"10.1016/j.mssp.2025.109708","url":null,"abstract":"<div><div>Magnesium oxide (MgO) thin film without and with introduced oxygen was inserted between Al and nickel oxide (NiO) via a sputtering method to improve the performance of Al/NiO Schottky barrier diodes (SBDs). The SBDs without MgO insertion, Al/NiO, revealed a non-rectifying <em>I-V</em> curve. SBDs with MgO insertion, Al/MgO/NiO, significantly suppressed the leakage current. However, the Al/MgO/NiO SBDs without the introduced-oxygen MgO still exhibited a non-rectifying <em>I-V</em> characteristic. Nevertheless, the Al/MgO/NiO SBDs with the introduced-oxygen MgO reduced the leakage current by approximately 5168 times compared to the Al/NiO SBDs. Simultaneously, the Al/MgO/NiO SBDs with the introduced-oxygen MgO appeared a good rectifying behaviour having a rectification ratio of 145. A low Schottky-barrier height (SBH) of 0.69 eV was observed in Al/NiO SBDs. After insertion of MgO without introduced oxygen, the SBH was raised to 0.78 eV in Al/MgO/NiO. The SBH was further increased to 0.94 eV in the Al/MgO/NiO SBDs with introduced oxygen. The reason of less leakage current and large SBH in the Al/MgO/NiO SBDs with introduced oxygen is caused by that the compensated defects in MgO. The introduced oxygen atoms during MgO sputtering compensated for the oxygen vacancies of MgO and hence less defects. A Ln<em>(I)</em> versus Ln<em>(V)</em> plot was used to study carrier transport mechanisms. Only one region of ohmic transport was observed in Al/NiO and Al/MgO/NiO SBDs without introduced oxygen, where holes tunnelled from NiO to Al through the surface defects of NiO and MgO. In contrast, two distinct transport regions were observed in Al/MgO/NiO SBDs with introduced oxygen. For <em>V</em> &lt; 0.8 V, diffusion-tunnelling dominated the transport. However, the trap-free space-charge-limited current controlled the transport at <em>V</em> &gt; 0.8 V; here, the injected holes from NiO occupies most of the MgO traps, and thus hindered the further injection of holes.</div></div>","PeriodicalId":18240,"journal":{"name":"Materials Science in Semiconductor Processing","volume":"197 ","pages":"Article 109708"},"PeriodicalIF":4.2,"publicationDate":"2025-05-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144124783","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Enhancing efficiency and stability of perovskite solar cells via DB24C8 dual-sided passivation at the ETL/PVSK interface","authors":"Rui-Yun Hsu ,&nbsp;Chieh Chen ,&nbsp;Bing-Chwen Yang ,&nbsp;En-Jui Hsu ,&nbsp;Wei-Hsiang Wang","doi":"10.1016/j.mssp.2025.109709","DOIUrl":"10.1016/j.mssp.2025.109709","url":null,"abstract":"<div><div>This study demonstrates the effectiveness of Dibenzo-24-crown-8 (DB24C8) as a passivation agent at the interface between the electron transport layer (ETL) and perovskite (PVSK) layer in perovskite solar cells (PSCs). By optimizing the surface morphology of the SnO₂ in the ETL, DB24C8 reduces interfacial defects, lowers leakage current, and enhances the wettability of the ETL, resulting in improved nucleation and crystallinity of the PVSK film. Within the PVSK layer, DB24C8 increases grain size and reduces grain boundary defects and trap states, as confirmed by photoluminescence (PL) and time-resolved photoluminescence (TR-PL) measurements. Optimizing DB24C8 concentration at 3 mM raises the power conversion efficiency (PCE) from 16.72 % to 20.53 %, with improvements in open-circuit voltage (<em>V</em>oc), short-circuit current density (<em>J</em>sc), and fill factor (FF). Furthermore, the dual-sided passivation of DB24C8 enhances the long-term stability of devices, maintaining over 80 % of initial efficiency after 1500 h under unencapsulated conditions. These findings suggest that DB24C8 significantly improves both performance and environmental stability, making it a promising candidate for the commercial application of PSCs.</div></div>","PeriodicalId":18240,"journal":{"name":"Materials Science in Semiconductor Processing","volume":"197 ","pages":"Article 109709"},"PeriodicalIF":4.2,"publicationDate":"2025-05-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144124784","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}