Materials Science in Semiconductor Processing最新文献

{"title":"Self-powered broadband photodetector based on vacuum-evaporated PbSe/SnSe2 heterostructure for encrypted optical communication","authors":"Wenjin Zhang ,&nbsp;Quanjiang Lv ,&nbsp;Siwei Liu ,&nbsp;Mingyang Yu ,&nbsp;Xuejun Zhao ,&nbsp;Yifei Wang ,&nbsp;Guiwu Liu ,&nbsp;Guanjun Qiao ,&nbsp;Junlin Liu","doi":"10.1016/j.mssp.2026.110469","DOIUrl":"10.1016/j.mssp.2026.110469","url":null,"abstract":"<div><div>Lead selenide (PbSe) infrared photodetectors hold promise for uncooled operation but remain limited by high power consumption, suboptimal detection performance, and the scalability challenges of conventional chemical synthesis. Here, we demonstrate a PbSe/SnSe₂ heterojunction photodetector fabricated via dual-source thermal evaporation, providing a physical vapor deposition (PVD) route toward scalable, self-powered devices. Structural and interfacial properties were confirmed by X-ray diffraction, scanning electron microscopy, X-ray photoelectron spectroscopy, Kelvin probe force microscopy, Hall measurements, and optical absorption analysis. Strikingly, the heterojunction exhibits strong rectification behavior, ultra-low dark current, and broadband photoresponse from the visible (405 nm) to the near-infrared (1550 nm). Under zero bias at 1550 nm illumination, the device achieves an <em>I</em>_<em>on</em>/<em>I</em>_<em>off</em> ratio of 9.8 × 10², a responsivity of 2.67 mA W⁻¹, a detectivity of 5.84 × 10¹⁰ Jones, and fast rise/fall times of 1.43/1.44 ms. Furthermore, we demonstrate an optoelectronic “OR” logic gate enabling dual-band encrypted data transmission and decryption. These results highlight the potential of PbSe/SnSe₂ heterojunctions for low-power, broadband detection and dual-band encrypted optical communication.</div></div>","PeriodicalId":18240,"journal":{"name":"Materials Science in Semiconductor Processing","volume":"207 ","pages":"Article 110469"},"PeriodicalIF":4.6,"publicationDate":"2026-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"146081133","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Experimental study on the influencing factors of short-circuit characteristics of press-pack IGBTs","authors":"Ganyu Feng,&nbsp;Xuebao Li,&nbsp;Pengbo Miao,&nbsp;Yumeng Cai,&nbsp;Chen Tao,&nbsp;Chenran Jia,&nbsp;Peng Sun,&nbsp;Zhibin Zhao","doi":"10.1016/j.mssp.2026.110463","DOIUrl":"10.1016/j.mssp.2026.110463","url":null,"abstract":"<div><div>As a core component in the field of flexible DC transmission, the press-pack Insulated Gate Bipolar Transistor (IGBT) is widely employed in a variety of power electronic applications. During short-circuit (SC) faults, the IGBT is simultaneously exposed to both high voltage and high current, and its SC behavior directly affects the reliability of the system. However, existing studies on the influencing factors of the SC characteristics of press-pack IGBT are relatively limited and fail to comprehensively capture the behavior under different operating conditions and chip parameters. This paper first establishes an experimental platform specifically designed to investigate the SC characteristics of press-pack IGBT, and analyzes the typical behaviors of short-circuit type I (SC-I) and type II (SC-II). Based on this platform, SC-I and SC-II waveforms are measured under varying conditions, including chip parameters, external circuit parameters, and environmental parameters. Furthermore, this study elucidates the distinct influences of these key parameters on SC-I versus SC-II characteristics and provides an in-depth discussion of the underlying mechanisms responsible for the observed differences. This study aims to elucidate the governing effects of multiple operating conditions and chip parameters on the SC-I and SC-II characteristics of press-pack IGBT and to explore the underlying physical mechanisms, which are of great significance for advancing the understanding of press-pack IGBT SC behavior and improving their SC withstand capability.</div></div>","PeriodicalId":18240,"journal":{"name":"Materials Science in Semiconductor Processing","volume":"207 ","pages":"Article 110463"},"PeriodicalIF":4.6,"publicationDate":"2026-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"146081134","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Preparation of graphite carbon modified g-C3N4 photocatalysts by stepwise activation method and study on degradation performance for sulfamethoxazole","authors":"Wanbin Hong ,&nbsp;Qianming Lu ,&nbsp;Hanyu Chen ,&nbsp;Huikang Zhang ,&nbsp;KunFeng Zhang","doi":"10.1016/j.mssp.2026.110432","DOIUrl":"10.1016/j.mssp.2026.110432","url":null,"abstract":"<div><div>Graphite carbon-modified graphite nitride carbon (g-C₃N₄) exhibits potential application value in the degradation of antibiotic wastewater. In the study, a graphite carbon-modified g-C₃N₄ composite catalyst is synthesized by thermal condensation. The porous lamellar graphite carbon (SG) combines with g-C₃N₄, forming a composite material (SG-CN) with hierarchical structure. Under the condition of simulating visible light with Xenon lamp, the SG-CN can remove 92 % of sulfamethoxazole (SMX) in 120 min, displaying excellent sustainability and catalytic activity. Through a series of experiments and characterization, it has been proved that the enhanced photocatalytic performance arises from synergistic effects originating from the incorporation of activated graphite carbon. Its distinctive loose porous graphitized structure facilitates the formation of efficient charge transport pathways, thereby promoting electron transfer and shortening the migration distance of photogenerated electrons. In addition, the incorporation of carbon extends the response range of visible light. LC-MS identifies intermediate species and potential degradation routes of SMX. Quenching test indicates that •OH, h⁺ and •O₂⁻ radicals all participate in SMX degradation. Additionally, the photocatalyst shows broad-spectrum applicability to multiple sulfonamide antibiotics (degradation efficiencies &gt;80 %), promoting universal applicability to sulfonamide-containing wastewater. These findings demonstrate that graphite modified g-C₃N₄ has good potential practical value in the antibiotic wastewater treatment.</div></div>","PeriodicalId":18240,"journal":{"name":"Materials Science in Semiconductor Processing","volume":"207 ","pages":"Article 110432"},"PeriodicalIF":4.6,"publicationDate":"2026-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"146081215","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Layer dependent thermoelectric properties of two dimensional SnSe and Janus SnSeS Monolayers: First-principles calculations","authors":"Muhammad Faraz ,&nbsp;Gul Rahman ,&nbsp;Imran Shakir","doi":"10.1016/j.mssp.2026.110455","DOIUrl":"10.1016/j.mssp.2026.110455","url":null,"abstract":"<div><div>First-principles calculations combined with the Boltzmann transport equation are carried out to study the electronic structures and thermoelectric properties of few-layer SnSe and Janus SnSeS. Both SnSe and SnSeS reveal that the band gap decreases as the thickness of SnSe increases. The band gap of Janus SnSeS is large as compared to that of SnSe systems. Power factor (PF) and zT show maximum values around 0.5 eV chemical potential and both PF and zT increase with temperature and layer thickness. The highest values of PF and zT are <span><math><mrow><mn>33</mn><mo>.</mo><mn>96</mn><mo>×</mo><mn>1</mn><msup><mrow><mn>0</mn></mrow><mrow><mo>−</mo><mn>4</mn></mrow></msup></mrow></math></span> W/mK² and 1.51 ,which are achieved at 800 K for six layers of SnSe. Monolayer SnSe exhibits efficient thermoelectric performance at low carrier concentrations, whereas multilayer SnSe shows better performance at higher carrier concentrations. As the layer thickness is increased, enhanced thermoelectric performance is observed for <span><math><mi>n</mi></math></span>-type doping in SnSe, whereas <span><math><mi>n</mi></math></span>-type doping also leads to more efficient thermoelectric behavior in Janus SnSeS systems. Furthermore, monolayer SnSe shows a larger PF and zT along the armchair direction compared to the zigzag direction. <span><math><mi>p</mi></math></span>-type Janus monolayer SnSeS exhibits a higher zT when measured along armchair direction as compared with zigzag direction. Hexa-layered janus SnSeS has larger zT (<span><math><mrow><mo>&gt;</mo><mn>1</mn></mrow></math></span>)along zigzag direction when doped with electrons at high temperature . We believe that <span><math><mi>n</mi></math></span>-type doping in SnSe and Janus SnSeS is essential for better thermoelectric performance.</div></div>","PeriodicalId":18240,"journal":{"name":"Materials Science in Semiconductor Processing","volume":"207 ","pages":"Article 110455"},"PeriodicalIF":4.6,"publicationDate":"2026-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"146045278","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Damage-threshold performance of Al2O3 films under high-repetition-rate 266 nm ultraviolet picosecond-laser irradiation","authors":"Menglei Wang ,&nbsp;Kun Wang ,&nbsp;Qixin Liu ,&nbsp;Weili Zhang ,&nbsp;Ruchen Zhao ,&nbsp;Lei Zhang ,&nbsp;Yuchuan Shao","doi":"10.1016/j.mssp.2026.110480","DOIUrl":"10.1016/j.mssp.2026.110480","url":null,"abstract":"<div><div>Aluminum oxide (Al₂O₃) films, as a key coating material for high-power ultraviolet (UV) laser systems, are vital to the stability of laser outputs owing to their favorable optical performance and damage resistance. In this study, Al₂O₃ films were fabricated using electron-beam evaporation (EB) and ion-beam-assisted deposition electron-beam (IBAD-EB), followed by high-temperature annealing. Results show that the IBAD-EB process—by employing ion-beam assistance—increased film density and simultaneously introduced oxygen, whose ionization improved the stoichiometry and reduced absorption, thus resulting in a damage threshold of 30.9 kW/cm² for Al₂O₃ single-layer films, i.e., an increase by 3.25 times compared with EB films (9.5 kW/cm²). After annealing, the EB-deposited Al₂O₃ films became fully oxidized, which increased their damage threshold to 27.9 kW/cm² (a 2.9 folds increase), whereas the dense IBAD-EB films showed minimal change. In Al₂O₃/SiO₂ antireflection coatings, annealing increased the damage threshold by 5.62 folds (to 55.6 kW/cm²) and 3.81 folds (to 36.2 kW/cm²) for the films fabricated via EB and IBAD-EB, respectively. This study elucidates the mechanisms by which ion assistance and annealing optimize the damage performance of Al₂O₃ films under high-repetition-rate UV picosecond-laser irradiation, thus providing both theoretical and experimental guidance for the process design of high-repetition-rate UV-laser-coating devices.</div></div>","PeriodicalId":18240,"journal":{"name":"Materials Science in Semiconductor Processing","volume":"207 ","pages":"Article 110480"},"PeriodicalIF":4.6,"publicationDate":"2026-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"146190625","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Carbon nanomaterials for next-generation wireless communications: From synthesis to THz applications","authors":"R. Aarthi ,&nbsp;G. Supraja ,&nbsp;V. Samuthira Pandi ,&nbsp;S. Maheswari ,&nbsp;D. Haripriya","doi":"10.1016/j.mssp.2026.110508","DOIUrl":"10.1016/j.mssp.2026.110508","url":null,"abstract":"<div><div>The evolution toward sixth-generation (6G) wireless networks operating in the terahertz (THz) frequency regime presents unprecedented technical challenges that exceed the capabilities of conventional semiconductor technologies. This comprehensive review examines carbon nanomaterials as enabling technologies for next-generation wireless communications, providing a systematic analysis of synthesis methods, device architectures, and performance characteristics essential for THz applications. The exceptional electronic properties of carbon nanomaterials, including carrier mobilities exceeding 200,000 cm²/V·s in suspended graphene and saturation velocities approaching 5 × 10⁷ cm/s, enable operation at frequencies above 1 THz while providing superior energy efficiency compared to silicon-based technologies. Five primary synthesis approaches are evaluated: mechanical exfoliation for research applications, chemical vapor deposition (CVD) for wafer-scale production achieving mobilities of 3000–8000 cm²/V·s, liquid-phase and electrochemical exfoliation for industrial scalability, laser-induced graphene for flexible electronics, and biomass-derived methods offering 90% cost reduction with carbon-neutral environmental impact. Device architecture analysis encompasses conventional field-effect transistor configurations (top-gate, back-gate, dual-gate, vertical) and advanced concepts including suspended devices achieving ballistic transport with 40-100 × mobility enhancement, flexible devices enabling conformal integration with sub-millimeter bending radii, and heterostructure devices providing engineered electronic properties. Revolutionary device concepts including neuromorphic computing with sub-picoWatt power consumption, quantum sensing approaching fundamental sensitivity limits, and energy harvesting achieving &gt;50% conversion efficiency enable autonomous THz communication systems.</div></div>","PeriodicalId":18240,"journal":{"name":"Materials Science in Semiconductor Processing","volume":"207 ","pages":"Article 110508"},"PeriodicalIF":4.6,"publicationDate":"2026-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"146189790","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Site-specific Mg doping in LaFeO3 perovskites: Tuning photophysical behavior and trap-state dynamics","authors":"Asmida Herawati ,&nbsp;Hoerudin Bayu Hidayah ,&nbsp;Rifqi Almusahwi Rafsanjani ,&nbsp;Eri Widianto ,&nbsp;Affi Nur Hidayah ,&nbsp;Edi Suprayoga ,&nbsp;Isnaeni ,&nbsp;Djoko Triyono ,&nbsp;Suryadi","doi":"10.1016/j.mssp.2026.110507","DOIUrl":"10.1016/j.mssp.2026.110507","url":null,"abstract":"<div><div>Lanthanum ferrite (LaFeO₃) perovskite offers high structural stability and strong visible-light absorption, yet its optoelectronic response is frequently limited by trap-assisted losses and non-radiative recombination. Here, we systematically assess site-specific <em>Mg doping</em> by comparing substitution at La³⁺ (A-site) and Fe³⁺ (B-site) in LaFeO₃ thin films, and we establish a unified structure–defect–property correlation by combining XRD, FE-SEM, UV–Vis DRS, PL, XPS, dark electrochemical impedance spectroscopy, and DFT(+U) defect formation-energy calculations. Moderate B-site Mg substitution (x = 0.1, LFM01) delivers the most favorable film quality, with compact grains and a controlled oxygen-vacancy population. Power-dependent PL yields β values approaching unity (β ≈ 1.0), narrower emission linewidths, and negative exciton binding energies, consistent with a defect-optimized regime where recombination becomes more delocalized and band-to-band–like. In contrast, A-site Mg doping (LMF01) exhibits a higher β exponent (β ≈ 1.3) together with positive exciton binding energies and broadened, strongly quenched PL, indicating recombination dominated by deep, strongly localized non-radiative traps. At higher B-site loading (LFM03), vacancy clustering drives a defect-saturated regime marked by reduced PL efficiency, broader emission, and β &lt; 1 (β ≈ 0.9). Dark EIS identifies LFM01 as the most conductive film (lowest transport resistance), while DFT confirms Fe-site Mg is thermodynamically favored and lowers the oxygen-vacancy formation energy, rationalizing the coupled defect, photophysical, and transport trends. These findings highlight the critical role of dopant site selectivity in modulating defect states and recombination dynamics, offering valuable insights for optimizing LaFeO₃-based materials for future optoelectronic technologies.</div></div>","PeriodicalId":18240,"journal":{"name":"Materials Science in Semiconductor Processing","volume":"207 ","pages":"Article 110507"},"PeriodicalIF":4.6,"publicationDate":"2026-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"146189792","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Metallic MoScP2Se6 monolayer with ultrafast ion diffusion for high-performance sodium and potassium-ion batteries","authors":"Shehzad Ahmed ,&nbsp;Awais Ghani ,&nbsp;Kiren Bibi ,&nbsp;Shalindera Rajput ,&nbsp;Amei Zhang","doi":"10.1016/j.mssp.2026.110453","DOIUrl":"10.1016/j.mssp.2026.110453","url":null,"abstract":"<div><div>The increasing demand for advanced energy-storage systems beyond lithium-ion batteries has stimulated intensive interest in sodium-ion and potassium-ion batteries owing to the abundance and low cost of sodium and potassium. However, identifying anode materials that simultaneously exhibit high capacity, fast ion diffusion, and robust structural stability remains a major challenge. Herein, the anodic performance of a MoScP₂Se₆ monolayer for Na⁺ and K⁺ ion batteries is systematically investigated using first-principles density functional theory calculations. The polyanion-bridged chalcogenide framework provides intrinsic structural robustness and wide diffusion channels for alkali-ion transport. Ab initio molecular dynamics simulations at 300 K and phonon dispersion analysis confirm excellent thermal and dynamical stability. Electronic structure calculations reveal intrinsic metallicity dominated by Mo 4d and Se 4p states, enabling efficient electron transport. Theoretical specific capacities of 713 mAh g⁻¹ (Na⁺) and 687 mAh g⁻¹ (K⁺) are achieved, exceeding those of many reported two-dimensional anodes. In addition, low migration barriers of 0.18–0.22 eV for Na⁺ and 0.11–0.14 eV for K⁺ indicate rapid ion diffusion and favorable rate capability. These results highlight MoScP₂Se₆ as a promising high-rate anode candidate for next-generation alkali-ion batteries.</div></div>","PeriodicalId":18240,"journal":{"name":"Materials Science in Semiconductor Processing","volume":"207 ","pages":"Article 110453"},"PeriodicalIF":4.6,"publicationDate":"2026-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"146189793","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Transient and long-term effects of Al implantation temperature on electrical and structural properties of 4H-SiC","authors":"Virginia Boldrini ,&nbsp;Mariaconcetta Canino ,&nbsp;Samet Ocak ,&nbsp;Silvia Milita ,&nbsp;Marco Pieruccini ,&nbsp;Jeremy A. Turcaud","doi":"10.1016/j.mssp.2026.110502","DOIUrl":"10.1016/j.mssp.2026.110502","url":null,"abstract":"<div><div>This study examines the influence of implantation temperature and annealing duration on lattice damage recovery and the electrical properties of Al-implanted 4H-SiC. With the aim of reducing the thermal budget and improving process yield, particular attention is given to implantation at temperatures as low as 350 °C and annealing times below 30 min. Under conventional 30-min annealing, higher implantation temperatures are known to produce Al-implanted layers with lower sheet resistance. This work shows that low implantation temperature is not detrimental for brief annealing treatments: after 10 min at 1800 °C, 350 °C implantation leads to a sheet resistance comparable to the one obtained with 650 °C, and even to a lower value for a 3 min annealing. This can be explained by a cooperative mechanism of atomic rearrangement and Al incorporation in disordered lattice regions. High-resolution X-ray diffraction confirms that the larger structural damage resulting from 350 °C implantation is effectively recovered by brief annealing (e.g. 1800 °C 3 min), producing patterns similar to those resulting from 650 °C implantation and same annealing. Lattice recovery is therefore very rapid. This work shows that the implantation damage favours lattice recovery enhancing dopant activation, but only during the first stage of the annealing. An implantation-induced transient effect in 4H-SiC can be identified highlighting the potential of rapid annealing for efficient dopant activation.</div></div>","PeriodicalId":18240,"journal":{"name":"Materials Science in Semiconductor Processing","volume":"207 ","pages":"Article 110502"},"PeriodicalIF":4.6,"publicationDate":"2026-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"146189794","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Impact of substrate orientation and first-monolayer initiation on MBE GaAs/Si(hhl) heterostructures","authors":"E.H. Sánchez-Martínez ,&nbsp;R. Méndez-Camacho ,&nbsp;J. Alanis ,&nbsp;G. Villa-Martínez ,&nbsp;C.M. Yee-Rendón ,&nbsp;J.G. Mendoza-Álvarez ,&nbsp;M.A. Vidal ,&nbsp;E. Cruz-Hernández ,&nbsp;M. López-López","doi":"10.1016/j.mssp.2026.110509","DOIUrl":"10.1016/j.mssp.2026.110509","url":null,"abstract":"<div><div>Defects generated at the heterovalent GaAs/Si interface severely limit the efficiency of directly integrated III–V/Si optoelectronics, yet the impact of substrate orientation and of the very first monolayer on this defect landscape remains poorly quantified at the process level. Here we investigate how these two growth knobs control the structural and optical properties of GaAs/AlGaAs heterostructures comprising a 5 nm GaAs quantum well (QW) and a short-period GaAs/AlGaAs superlattice grown by MBE on Si(001), Si(113), Si(111) and Si(331). For each orientation, Ga-first and As-first initiation at the GaAs/Si interface are compared under identical growth conditions using atomic force microscopy, low-temperature photoluminescence (PL), room-temperature photoreflectance (PR) and high-resolution X-ray diffraction (HRXRD). Across the four orientations, Ga-first generally yields sharper HRXRD film responses, weaker superlattice PL relative to the QW and, in most cases, clearer PR signatures of built-in fields, whereas As-first can produce very intense QW and superlattice emission at the expense of structural coherence, particularly on Si(001). Within the fixed growth conditions explored here, GaAs grown on Si(111) with Ga-first initiation offers the best overall balance, combining smooth morphology, sharp QW emission and well-defined internal fields, while As-first on Si(331) represents the opposite extreme with poor coherence, no measurable PR signal and strong superlattice PL. The combined PL and PR analysis shows that internal fields redistribute carriers across the heterostructure, while the balance between QW and superlattice emission is governed by the interplay of disorder-induced potential fluctuations and non-radiative centers. Beyond identifying the combined choice of orientation and first-monolayer chemistry as a practical screening knob for GaAs/Si(hhl) growth, this side-by-side study establishes a practical process map linking substrate orientation and nucleation route to morphology, structural coherence, built-in fields and emission pathways in GaAs/Si(hhl) growth.</div></div>","PeriodicalId":18240,"journal":{"name":"Materials Science in Semiconductor Processing","volume":"207 ","pages":"Article 110509"},"PeriodicalIF":4.6,"publicationDate":"2026-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"146189795","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}