Materials Science in Semiconductor Processing最新文献

{"title":"Tailoring trap dynamics and luminescence in SrAl2O4:Eu2+,Dy3+-Borotellurite glass composites through boron modification","authors":"Kiran Kalkal,&nbsp;Y. Dwivedi","doi":"10.1016/j.mssp.2025.110065","DOIUrl":"10.1016/j.mssp.2025.110065","url":null,"abstract":"<div><div>SrAl₂O₄:Eu²⁺,Dy³⁺ represents a prototypical persistent phosphor, renowned for its pronounced green emission. However, its practical application in device integration is significantly limited by inadequate thermal stability and pronounced vulnerability to degradation under certain environmental conditions. Embedding such phosphors into optimized glass matrices offers a strategy to preserve luminescence while enabling structural stability. In this work, SrAl₂O₄:Eu²⁺,Dy³⁺ phosphor was incorporated into borotellurite (BT) glasses with varying B₂O₃ content to probe the interplay between glass network modification and persistent luminescence behavior. Structural analyses confirmed the retention of SrAl₂O₄ crystallinity while embedded in the amorphous glass. The electron microscopy analysis revealed uniform phosphor dispersion in the glass. Thermal studies showed thermal stability up to 600 °C. Optical characterization showed an increase in the bandgap from 3.60 to 3.98 eV with boron incorporation in BT glass, while the composites exhibited bandgap variations arising from matrix-induced modifications of the Eu²⁺ environment. Strong green emission (∼520 nm) was retained across all composites, with subtle CIE color coordinate shift. Thermoluminescence revealed trap depths of 0.65–0.98 eV, with SrAl:BT1 composite exhibiting the most favourable trap distribution and the longest afterglow lifetime (∼8000 s). These findings establish phosphor-glass composite as a powerful route to stabilize and tune SrAl-phosphor optical properties, offering a pathway toward persistent lighting, optical data storage, security markers, and advanced photonic devices.</div></div>","PeriodicalId":18240,"journal":{"name":"Materials Science in Semiconductor Processing","volume":"201 ","pages":"Article 110065"},"PeriodicalIF":4.6,"publicationDate":"2025-09-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145118917","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Structure and thermal stability investigations of (1-x)CaBi4Ti4O15-xNa0.5Bi4.5Ti4O15","authors":"Haolun Cai,&nbsp;Xiangping Jiang,&nbsp;Chao Chen,&nbsp;Yunjing Chen,&nbsp;Chong Zhao,&nbsp;Benjin Xu,&nbsp;Renfen Zeng,&nbsp;Ting Xiong,&nbsp;Na Tu,&nbsp;Xin Nie","doi":"10.1016/j.mssp.2025.110053","DOIUrl":"10.1016/j.mssp.2025.110053","url":null,"abstract":"<div><div>The successful synthesis of (1-<em>x</em>)CaBi₄Ti₄O₁₅-<em>x</em>Na_0.5Bi_4.5Ti₄O₁₅ (CNBT-<em>x</em>, <em>x</em> = 0, 0.3, 0.5, 0.7, 1) high-temperature piezoelectric ceramics has been accomplished through the utilisation of a conventional solid-state reaction method. The primary focus of our research pertains to the ceramic structure of solid solutions, piezoelectric properties, and ferroelectric characteristics. Adding Na_0.5Bi_4.5Ti₄O₁₅ to CaBi₄Ti₄O₁₅ promotes lattice distortion, inhibits grain growth, reduces oxygen vacancies, and improves the <em>d</em>₃₃ value of CBT. When <em>x</em> = 0.7, the ceramics piezoelectric performance <em>d</em>₃₃ value of 24 pC/N, which is significantly higher than that of conventional CBT ceramics (<em>d</em>₃₃ = 8 pC/N). Furthermore, the Curie temperature (<em>T</em>_C) of this material is 685 °C. The <em>d</em>₃₃ value remains as high as 21 pC/N even after annealing at 600 °C, indicating excellent thermal stability. The incorporation of Na⁺ and Bi³⁺ ions markedly reduced the oxygen vacancy concentration, resulting in resistivities reaching up to 10⁷ Ω cm at 500 °C. Additionally, the material exhibits excellent thermal stability at elevated temperatures and a <em>k</em>_p value charge ranging from 5.2 % to 6 % (less than 16 %) over the temperature range from room temperature to 450 °C. The above properties suggest that CNBT-0.7 ceramics are ideal for use in high-temperature piezoelectric sensors.</div></div>","PeriodicalId":18240,"journal":{"name":"Materials Science in Semiconductor Processing","volume":"201 ","pages":"Article 110053"},"PeriodicalIF":4.6,"publicationDate":"2025-09-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145118918","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Impact of Er3+ doping on temperature coefficient of resistivity and magnetoresistance properties of La0.7Ca0.3MnO3","authors":"Xuemei Deng,&nbsp;Jingang Guo,&nbsp;Shuang Ding,&nbsp;Yuchen Xie,&nbsp;Hui Zhang,&nbsp;Qingming Chen,&nbsp;Yule Li","doi":"10.1016/j.mssp.2025.110085","DOIUrl":"10.1016/j.mssp.2025.110085","url":null,"abstract":"<div><div>Improving the temperature coefficient of resistance (TCR) and magnetoresistance (MR) properties of perovskite ceramics under low external magnetic fields, to enhance their performance in devices such as infrared sensors and magnetic storage systems, has become one of the key research directions. Nevertheless, the underlying electromagnetic transport mechanism remains unclear, and further performance optimization is required to meet practical application demands. Herein, a series of La_{0.7-<em>x</em>}Er_<em>x</em>Ca_0.3MnO₃ ceramics were synthesized by the sol-gel method. The results indicate that as the doping ratio increases, the resistivity progressively rises. The sample exhibits smooth grain surfaces, clear grain boundaries, and strong grain interconnections. Analysis reveals that doping with Er in La_0.7Ca_0.3MnO₃ (LCMO) introduces lattice distortion, reducing the average ionic radius of the A-site, which leads to a decrease in the unit cell volume and weakens the double-exchange interaction. Within a certain doping range, these changes enhance the magnetoelectric transport properties of LCMO materials. As a result, when <em>x</em> = 0.015, the TCR reaches 47.88 %·K⁻¹, and when <em>x</em> = 0.06, the MR reaches 93.97 %. This study provides new theoretical basis and practical guidance for the development of perovskite-type oxide materials with better performance and offers auxiliary means for the preparation of high TCR and high MR of LCMO materials.</div></div>","PeriodicalId":18240,"journal":{"name":"Materials Science in Semiconductor Processing","volume":"201 ","pages":"Article 110085"},"PeriodicalIF":4.6,"publicationDate":"2025-09-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145107126","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Controllable growth and photodetectors of centimeter-scale 2D ReS2xSe2(1-x) alloy films","authors":"Aixiang Wei ,&nbsp;Jirun Zou ,&nbsp;Yu zhao ,&nbsp;Deyu Xu","doi":"10.1016/j.mssp.2025.110075","DOIUrl":"10.1016/j.mssp.2025.110075","url":null,"abstract":"<div><div>Band-gap engineering in two-dimensional (2D) transition metal dichalcogenides (TMDs) is crucial for advancing nanoelectronics and optoelectronic applications. Alloying TMDs with different band gaps enable precise bandgap tuning through compositional control. In this work, centimeter-scale 2D ReS_2xSe_2(1-x) alloy films with a tunable sulfur content (x) were successfully grown on mica substrates via chemical vapor deposition (CVD) by varying the S/Se precursor ratio. The ReS_2xSe_2(1-x) alloy films are polycrystalline films with grain sizes of several nanometers to several tens of nanometers. The back-gated field-effect transistors (FETs) fabricated from these alloys exhibited composition-dependent electrical properties: pure ReS₂ exhibited n-type conduction behavior, whereas pure ReSe₂ and ReS_2xSe_2(1-x) alloys exhibited p-type conduction behavior, with ReS_0.98Se_1.02 achieving the highest hole mobility of 2.6 cm²/(V·s). An ohmic contact was formed between the Au electrodes and alloy channels. Photodetectors based on these alloys displayed composition-tunable spectral responses from the ultraviolet–visible range to the near-infrared range. The alloys with a S content of 2x &lt; 1 exhibited optimal photoresponsivity at 532 nm and 635 nm, whereas those with S composition of 2x &gt; 1 showed superior performance at 405 nm. Photodetectors based on ReS_1.82Se_0.18 have a photoresponsivity of 0.06 AW^-1 and rise/decay times of 0.30/0.10 s under 405 nm light irradiation, respectively, whereas the ReS_0.98Se_1.02-based device has photoresponsivities of 0.02 and 0.02 AW^-1 and rise/decay times of 0.16/0.16 and 0.14/0.12 s under 532 and 635 nm light irradiation, respectively. This trend directly correlates with the composition-tunable bandgap of the alloys. This work advances the scalable synthesis of ReS_2xSe_2(1-x) films and demonstrates their potential for wavelength-selective optoelectronic applications.</div></div>","PeriodicalId":18240,"journal":{"name":"Materials Science in Semiconductor Processing","volume":"201 ","pages":"Article 110075"},"PeriodicalIF":4.6,"publicationDate":"2025-09-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145107128","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"A novel slurry for Cu films CMP in Ru-based Cu interconnects: Integration of experimental and theoretical calculations","authors":"Zheng Wu ,&nbsp;Changxin Dong ,&nbsp;Xinhuan Niu ,&nbsp;Jiakai Zhou ,&nbsp;Chao He ,&nbsp;Xinjie Li ,&nbsp;Bin Hu ,&nbsp;Jiahui Li","doi":"10.1016/j.mssp.2025.110071","DOIUrl":"10.1016/j.mssp.2025.110071","url":null,"abstract":"<div><div>As technology nodes shrink below 10 nm, stricter demands are required for the one-step polishing of copper (Cu) films in ruthenium (Ru)-based Cu interconnects: a high Cu removal rate (RR) and a near-zero Ru RR. In this work, an eco-friendly slurry was newly formulated by combining hydroxyethylethylene diphosphonic acid (HEDP) and phytic acid (PA), both containing phosphate groups, to enhance corrosion inhibition and polishing performance during Cu/Ru CMP. Polishing and electrochemical experiments demonstrated that the synergistic inhibitors achieved a corrosion inhibition efficiency of 96 % for Cu. Under optimized conditions, the material removal rates (MRRs) of Cu and Ru reached 5432 Å/min and 10 Å/min, respectively, with a maximum removal rate selectivity (RRS) of 543:1 and surface roughness (<em>Sqs</em>) of 0.76 nm and 0.53 nm. Contact angle, coefficient of friction (COF), Ultraviolet–visible spectroscopy (UV–Vis), X-ray photoelectron spectroscopy (XPS) analyses confirmed the formation of a protective passivation film on Cu/Ru surfaces from both mechanical and chemical perspectives. Theoretical calculations identified the reactive sites of the inhibitors and simulated their adsorption behavior in a CMP environment, revealing that the synergistic inhibitors exhibited the highest adsorption energy. Without the use of surfactants, the multifunctional synergistic inhibitors improved surface quality through lubrication and passivation effects while reducing reagent consumption. This work provides both theoretical and practical guidance for the design of green and efficient CMP slurries in advanced semiconductor manufacturing.</div></div>","PeriodicalId":18240,"journal":{"name":"Materials Science in Semiconductor Processing","volume":"201 ","pages":"Article 110071"},"PeriodicalIF":4.6,"publicationDate":"2025-09-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145107124","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Achievement of high mobility and high stability DG IGZO TFTs with low thermal budget","authors":"Zhaoxing Fu ,&nbsp;Yiting Cheng ,&nbsp;Junyan Ren ,&nbsp;Yuting Xiong ,&nbsp;Hongfei Wu ,&nbsp;Zhipeng Chen ,&nbsp;Wangying Xu ,&nbsp;Lingyan Liang ,&nbsp;Hongtao Cao","doi":"10.1016/j.mssp.2025.110066","DOIUrl":"10.1016/j.mssp.2025.110066","url":null,"abstract":"<div><div>Achieving high mobility, robust stability, and low thermal budget simultaneously in oxide thin-film transistors (TFTs) remains a key challenge for next-generation displays and flexible electronics. We propose an optimized strategy for amorphous In–Ga–Zn–O (a-IGZO) TFTs by combining oxygen plasma pretreatment with a dual-gate architecture, enabling a synergistic enhancement in all three key performance metrics. A 1 min oxygen plasma treatment prior to atomic layer deposition of Al₂O₃ top dielectric promotes favorable trimethylaluminum adsorption and suppresses lattice damage, resulting in a high field-effect mobility of 30.99 cm²/V·s and robust ambient stability. The dual-gate structure further increases device mobility to 44.99 cm²/V·s and improves bias stress stability (ΔV_TH-PBTS/NBTS = +0.08 V/−0.05 V). Notably, the entire fabrication process is carried out at a maximum temperature of only 150 °C, demonstrating a low thermal budget. Furthermore, TCAD simulations are performed to verify that the dual-gate architecture facilitates bulk conduction across the channel, effectively suppressing interface trapping and enhancing bias-temperature-stress stability. This study offers a practical strategy for optimizing TFT performance parameters, with promising applications in high-performance, low-temperature, and flexible electronics.</div></div>","PeriodicalId":18240,"journal":{"name":"Materials Science in Semiconductor Processing","volume":"201 ","pages":"Article 110066"},"PeriodicalIF":4.6,"publicationDate":"2025-09-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145107125","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Fabrication of high-Ge-content silicon-Germanium film on SiO2/Silicon (111) patterned substrate by epitaxial lateral overgrowth","authors":"Ching-Hsueh Chiu ,&nbsp;Wu-Yih Uen ,&nbsp;Ting-Chuan Li ,&nbsp;Ching-Yi Liu ,&nbsp;Chiashain Chuang ,&nbsp;Ji-Lin Shen ,&nbsp;Dung-Sheng Tsai ,&nbsp;Lung-Hsing Hsu ,&nbsp;Hao-Chung Kuo","doi":"10.1016/j.mssp.2025.110077","DOIUrl":"10.1016/j.mssp.2025.110077","url":null,"abstract":"<div><div>In this study, we achieved a high-Ge-content SiGe-on-Si heteropitaxial structure by utilizing the patterned SiO₂/Si(111) substrate (PS) with micron-level line window array in the SiO₂ masking film and conducting the selective growth by liquid phase epitaxy (LPE). The anisotropic growth rate of LPE initially facilitated the epitaxial lateral overgrowth (ELO) of a low-Ge-content (20–25 %) SiGe buffer layer on PS. Subsequently, the heteroepitaxial growth of high-Ge-content (&gt;95 %) SiGe progressed vertically through a composition self-modulation process.</div><div>Atomic force microscope (AFM) analysis results demonstrated that the use of PS enables the surface roughness of high-Ge-content layer to decrease to as low as 2.1 nm, more than an order of magnitude better than grown directly on Si substrate. High content of Ge and the surface stress distribution in SiGe epitaxial layer were recognized by a Raman spectrometer. Furthermore, the conversion of elemental content from Si-rich to Ge-rich, and ultimately to a high-Ge-content (&gt;95 %) state was distinctly illustrated by the cross-sectional energy dispersive X-ray spectroscopy (EDS). Besides, high-resolution X-ray diffraction (HR-XRD) analysis and room-temperature photoluminescence (PL) measurements were also conducted to confirm the sample quality. Finally, transmission electron microscopy (TEM) analysis indicated that the planar defects (microtwins/stacking faults) that frequently appear when the heteroepitaxial growth is performed directly on Si(111) face seem to be completely suppressed when it is performed on PS. Our film characterizations demonstrated that using PS to perform ELO by LPE can effectively limit the formation and propagation of threading dislocations caused by the lattice mismatch. Both the surface morphology and crystalline quality have thus been definitely improved for the heteroepitaxial layer prepared. Therefore, the present work might provide an effective method for preparing high-quality Ge-on-Si epitaxial structures and opened up a potential application path for advanced semiconductors.</div></div>","PeriodicalId":18240,"journal":{"name":"Materials Science in Semiconductor Processing","volume":"201 ","pages":"Article 110077"},"PeriodicalIF":4.6,"publicationDate":"2025-09-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145107121","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Bidirectional electric-field control of quantum efficiency in Er3+-doped WSe2 monolayers: Up/down-conversion photonics for tunable optoelectronics","authors":"Wenjing Liu ,&nbsp;Zhitao Lin ,&nbsp;Hongquan Zhao ,&nbsp;Min Xu ,&nbsp;Shimao Feng ,&nbsp;Yiming Shu ,&nbsp;Mingjun Wang ,&nbsp;Shuhao Li ,&nbsp;Zhili Tong ,&nbsp;Pengcheng Zeng ,&nbsp;Xianguang Yang ,&nbsp;Xuan Shi","doi":"10.1016/j.mssp.2025.110078","DOIUrl":"10.1016/j.mssp.2025.110078","url":null,"abstract":"<div><div>High-concentration erbium-doped WSe₂ monolayer (7.2 at%) is synthesized via in-situ CVD, enabling electric-field-tunable photoluminescence (PL) with enhanced quantum efficiency. Structural characterization results verify the homogeneous incorporation of Er³⁺ into the host WSe₂, while gate-controlled devices reveal bidirectional modulation of up/down-conversion PL. The material exhibits broadband emission from UV to visible and near-infrared under 980 nm excitation, and a distinct 780 nm visible peak under 532 nm excitation. Vertical electric fields suppress PL under positive bias but boost up-conversion efficiency under negative bias. Through first-principles calculations, this is attributed to field-induced bandgap narrowing and enhanced electron-hole symmetry. These factors together promote radiative recombination. Power-dependent PL confirms stable exciton/trion emission, supporting high-power applications. This synergy of rare-earth doping and field engineering advances tunable optoelectronics, including adaptive photodetectors, bioimaging, and energy-efficient cooling systems.</div></div>","PeriodicalId":18240,"journal":{"name":"Materials Science in Semiconductor Processing","volume":"201 ","pages":"Article 110078"},"PeriodicalIF":4.6,"publicationDate":"2025-09-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145107123","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Comprehensive investigation of the THz response of undoped and 0.03 wt% Fe-doped LiNbO3 single crystals using THz-time domain spectroscopy and Lorentz DHO model","authors":"Lalit Kumar ,&nbsp;Guruvandra Singh ,&nbsp;R. Bhatt ,&nbsp;M. Soharab ,&nbsp;Indranil Bhaumik ,&nbsp;Dibakar Roy Chowdhury ,&nbsp;Mukul Singh ,&nbsp;Chitra Gautam ,&nbsp;Mukesh Jewariya","doi":"10.1016/j.mssp.2025.110072","DOIUrl":"10.1016/j.mssp.2025.110072","url":null,"abstract":"<div><div>This study presents a comprehensive investigation into the effects of iron (Fe) doping on the optical properties of congruent lithium niobate (LiNbO₃) single crystals in the THz region, which is the most elusive segment of the electromagnetic spectrum. Lithium niobate is a highly dielectric functional optical material with wide applications in photonics, nonlinear optics, and electro-optic devices. Undoped lithium niobate (LiNbO₃) and 0.03 wt% iron-doped LiNbO₃ (Fe:LiNbO₃) z-cut single crystals in congruent composition are grown under identical conditions to ensure consistency in crystal quality. The Czochralski technique is used for growing LiNbO₃ and Fe:LiNbO₃ crystals. Furthermore, the as-grown crystals are subjected to structural investigations using Raman spectroscopy to determine the effect of Fe doping on vibrational modes. Utilizing the terahertz time-domain spectroscopy (THz-TDS), we systematically examine the impact of Fe incorporation on key THz parameters over a broad spectral range of terahertz. Observations indicate that Fe doping significantly modulates its terahertz (THz) response, primarily through modifications in charge carrier dynamics and THz interaction mechanisms. Moreover, the experimental data are successfully modelled using the Lorentz damped harmonic oscillator (DHO) approach. The fitting reveals that the lowest vibrational mode, E(TO1), highly governs the dielectric response of both the undoped and doped crystals in the THz frequency range. These findings provide critical insight into the tunability of LiNbO₃ crystals via transition metal (Fe) doping and provide a valuable reference for the development of advanced THz photonic devices.</div></div>","PeriodicalId":18240,"journal":{"name":"Materials Science in Semiconductor Processing","volume":"201 ","pages":"Article 110072"},"PeriodicalIF":4.6,"publicationDate":"2025-09-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145107122","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"A practical guide to electrical characterization of interface states: Case studies on SiC and GaN","authors":"Zilan Wang ,&nbsp;Hongling Wu ,&nbsp;Haoyang Li ,&nbsp;Jiaxuan Yang ,&nbsp;Francis C.C. Ling ,&nbsp;Lai Wang","doi":"10.1016/j.mssp.2025.110050","DOIUrl":"10.1016/j.mssp.2025.110050","url":null,"abstract":"<div><div>SiC and GaN have garnered significant attention from both academia and industry due to their promising applications. However, interface states in these devices have become a critical performance-limiting factor. Furthermore, as novel device architectures continue to evolve, the characterization of interface states presents increasingly complex challenges. Among available techniques, electrical defect characterization methods have emerged as indispensable tools for investigating interface states due to their non-destructive nature, rapid measurement capabilities, cost-effectiveness, and ability to provide comprehensive parameters—including energy distribution, energy levels, and capture cross-sections. This tutorial highlights three widely used electrical characterization techniques for interface state analysis: capacitance-voltage (CV) profiling, the conductance method, and constant-capacitance deep-level transient spectroscopy (CC-DLTS). Each technique has demonstrated value within specific measurement ranges, and practical experience suggests that combining multiple approaches often yields the most reliable results. The discussion includes fundamental principles, implementation considerations, and case studies from actual device measurements, aiming to provide experimental researchers with practical guidance. With a focus on SiC and GaN, this guide seeks to offer actionable starting points for characterizing interface states, particularly for those new to these measurement techniques.</div></div>","PeriodicalId":18240,"journal":{"name":"Materials Science in Semiconductor Processing","volume":"201 ","pages":"Article 110050"},"PeriodicalIF":4.6,"publicationDate":"2025-09-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145107127","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}