Materials Science in Semiconductor Processing最新文献

{"title":"Visible-light responsive Z-scheme Ti3C2 MXene/In2S3/CeO2 heterojunction for enhanced photocatalytic water purification","authors":"Jingbo Ni ,&nbsp;Vittorio Boffa ,&nbsp;Klaus Westphal ,&nbsp;Deyong Wang ,&nbsp;Peter Kjær Kristensen ,&nbsp;Paola Calza","doi":"10.1016/j.mssp.2025.109379","DOIUrl":"10.1016/j.mssp.2025.109379","url":null,"abstract":"<div><div>Sun-driven photocatalysis has emerged as a promising and sustainable approach for the degradation of organic pollutants in water, offering a green solution to the global challenge of clean water for everybody. The efficiency of this process is largely determined by advanced photocatalysts. Semiconductor-based heterojunctions play a crucial role by facilitating rapid charge transfer, acting as electron mediators for redox reactions, and accelerating photocatalytic activity through synergistic effects. In this study, we successfully fabricated a novel Ti₃C₂ MXene/In₂S₃/CeO₂ (TMIC) Z-scheme heterojunction using a simple in situ synthesis and deposition method. Initially, we determined that the optimal ratio of CeO₂ to In₂S₃ was 15 %. After incorporating Ti₃C₂ MXene, electro-optical measurements, and catalytic activity tests indicated that the Ti₃C₂ MXene_0.0025/In₂S₃/CeO₂ (TM_0.025IC-15 %) heterojunction exhibited the optimal photodegradation performance, degrading over 92 % of methyl orange within 60 min and 99.7 % of diclofenac within 180 min. This performance was superior to both the individual components and other reported heterojunctions. Additionally, the TMIC heterojunction demonstrated excellent stability under our testing conditions and maintained satisfactory activity in a real municipal wastewater treatment plant effluent. This research presents a novel approach to advancing Z-scheme heterojunction photocatalyst design, demonstrating significant potential for practical wastewater treatment.</div></div>","PeriodicalId":18240,"journal":{"name":"Materials Science in Semiconductor Processing","volume":"191 ","pages":"Article 109379"},"PeriodicalIF":4.2,"publicationDate":"2025-02-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143402613","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"The effects of CF4 plasma treatment on the performance, gate bias stability, and defect characteristics of low-temperature indium-gallium-tin-oxide thin-film transistors","authors":"Dongbhin Kim ,&nbsp;Kyeong-Bae Lee ,&nbsp;Junho Noh ,&nbsp;Donghyun Kim ,&nbsp;Hyunsoo Park ,&nbsp;Byoungdeog Choi","doi":"10.1016/j.mssp.2025.109381","DOIUrl":"10.1016/j.mssp.2025.109381","url":null,"abstract":"<div><div>CF₄ plasma treatment, widely recognized for its use in etching processes, has emerged as an effective doping method for amorphous oxide semiconductor (AOS) based thin-film transistors (TFTs). However, a comprehensive understanding of the effects of CF₄ doping on the performance, reliability, and defect characteristics of AOS-based TFTs remains limited. This study investigates the influence of CF₄ plasma treatment on the electrical characteristics, bias stability, film properties, and defect profiles of amorphous In-Ga-Sn-O (a-IGTO) TFTs under varying treatment durations. As treatment time increases, the threshold voltage (<em>V</em>_th) shifts positively, while the subthreshold swing (<em>SS</em>) decreases. The field-effect mobility (<em>μ</em>_<em>FE</em>) initially increases but declines as treatment duration is extended. Notable improvements in <em>V</em>_th stability were observed under positive bias stress (PBS), negative bias stress (NBS), positive bias thermal stress (PBTS), and negative bias illumination stress (NBIS). Defect and physiochemical analyses reveal that these improvements stem from reduced deep-level oxygen vacancies and near-valence band minimum (VBM) hydrogen/oxygen-related defects. Excessive plasma exposure beyond a critical threshold, however, increases deep-level oxygen vacancies, negatively affecting performance and reliability. These findings provide valuable insights into optimizing doping strategies for developing more reliable, high-performance TFTs for advanced applications.</div></div>","PeriodicalId":18240,"journal":{"name":"Materials Science in Semiconductor Processing","volume":"191 ","pages":"Article 109381"},"PeriodicalIF":4.2,"publicationDate":"2025-02-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143394667","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Radiation effects of flexible IMM triple junction solar cell under 14 MeV neutron irradiation","authors":"Shuyi Zhang ,&nbsp;Xuqiang Liu ,&nbsp;Minqiang Liu ,&nbsp;Meng Li ,&nbsp;Fang Deng ,&nbsp;Abuduwayiti Aierken","doi":"10.1016/j.mssp.2025.109382","DOIUrl":"10.1016/j.mssp.2025.109382","url":null,"abstract":"<div><div>This paper aims to study the degradation mechanism of GaInP/GaAs/InGaAs flexible (Inverted Metamorphic) IMM triple-junction solar cells (3JSCs) caused by 14 MeV neutron irradiation. We present the analysis of the electrical performance of IMM 3JSCs before and after the irradiation including light and dark <em>I-V</em> characteristics, as well as the spectral response of each sub-cells. The results show that the electrical parameters decrease with increasing neutron fluence, especially under the higher fluence (8.00 × 10¹² n/cm²), the short circuit current (<em>I</em>_<em>sc</em>), open circuit voltage (<em>V</em>_<em>oc</em>) and conversion efficiency (<em>Eff</em>) drop to 93.23 %, 86.04 % and 74.48 % of its initial values, respectively. At the same time, under the fluence of 8.00 × 10¹² n/cm², the series resistance (<em>R</em>_<em>s</em>) increased to 1.38 times of the unirradiated value, while the shunt resistance (<em>R</em>_<em>sh</em>) decreased to 0.12 times of the initial value. In addition, the degradation level of external quantum efficiency, EQE, for each sub-cell implies that the GaInP top cell has better radiation resistance, GaAs middle cell degrades in long wavelength region of spectrum with increasing the fluence. The severe degradation occurs in the InGaAs bottom cell under the fluence of 8.00 × 10¹² n/cm², the EQE is reduced by 15 % compared to unirradiated solar cell.</div></div>","PeriodicalId":18240,"journal":{"name":"Materials Science in Semiconductor Processing","volume":"191 ","pages":"Article 109382"},"PeriodicalIF":4.2,"publicationDate":"2025-02-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143394564","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Transition metal substitutional doping of graphene nanomeshes: Structural, electronic, and magnetic properties","authors":"Reem Abd-Alkader ,&nbsp;Arafa Hassen ,&nbsp;Ahmed A. Maarouf ,&nbsp;Mohamed M. Fadlallah","doi":"10.1016/j.mssp.2025.109355","DOIUrl":"10.1016/j.mssp.2025.109355","url":null,"abstract":"<div><div>Graphene nanomeshes (GNMs) are porous structures that have attracted theoretical and experimental interest over the past decade. Pores of pristine graphene nanomeshes must be passivated by some species (X) to give chemically stable structures (X-GNM). Here, we consider semiconducting GNMs passivated with H, N, and O. We study substitutional implantation of X-GNM with transition metal elements M (M=Sc, Ti, V, Mn, Co, Ni, Cu, Zn), taking into account various doping locations from the center of the pore (P1, P2, P3, P4 and P5 located at 11.47 Å, 10.03 Å, 7.34 Å, 5.57 Å, and 5.98 Å, respectively). We seek to understand how altering the position of the dopant can influence the electronic and magnetic properties of GNM using density functional theory. The pore induces new symmetries compared to the parent graphene structure, requiring the consideration of various doping positions in the X-GNM unit cell. The doped H-GNM structures remain planar, whereas the M atoms in the (N, O)-GNM structures protrude from the plane. The M-(N, O)-GNM systems generally demonstrated stability greater than that of the M-H-GNM, with Co-H-, Ti-(N, O)-GNMs being the most stable structures. We find that the electronic properties and magnetization of the M-X-GNM are M- and X-dependent. Structures can be semiconductors, diluted magnetic semiconductors (DMSC), and metals. Notably, we find that the Ti-X-, the Ni-(N, O)-, and the Zn-N-GNMs are semiconductors, irrespective of the doping location. The (Mn, Co)-(N, O)-, V-(H, O)-, and Cu-N-GNMs are DMSCs, while the (Sc, Co, Cu)-H- and Cu-O-GNMs are metals. The V-N-GNM at position P2 and Co-O-GNM at position P4 are half-metallic systems, and can thus be used in spintronic applications. Our results can be valuable for designing graphene-based semiconductor and spintronic devices.</div></div>","PeriodicalId":18240,"journal":{"name":"Materials Science in Semiconductor Processing","volume":"191 ","pages":"Article 109355"},"PeriodicalIF":4.2,"publicationDate":"2025-02-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143394571","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Enhancement of device performance in vertical Au/Ni/β-Ga2O3 Schottky barrier diodes using regularly aligned inner field plates","authors":"Hoon-Ki Lee ,&nbsp;V. Janardhanam ,&nbsp;Jae-Kyoung Mun ,&nbsp;Tae-Hoon Jang ,&nbsp;Kyu-Hwan Shim ,&nbsp;Hyung Joong Yun ,&nbsp;Jonghan Won ,&nbsp;Chel-Jong Choi","doi":"10.1016/j.mssp.2025.109371","DOIUrl":"10.1016/j.mssp.2025.109371","url":null,"abstract":"<div><div>In the present study, the device performance of vertical Au/Ni/<em>β</em>-Ga₂O₃ Schottky barrier diodes with regularly aligned inner field plates is investigated. The fabricated Schottky barrier diode with regularly aligned inner field plates achieved an improved breakdown voltage (<em>V</em>_<em>BR</em>) of 590 V, compared to the 500 V for the diode without field plates. However, the power figure-of-merit (FOM) of the diode with inner field plates was determined to be 31.9 MWcm⁻², which is lower than the FOM of 48.2 MWcm⁻² for that of the diode without field plates. The FOM is decreased in the former because of its increased turn-on resistance associated with decreasing effective device area caused by the array of SiO₂ field plates. A technology computer-aided design (TCAD) simulation reveals that the regularly aligned inner field plates are effective in suppressing the peak electric field distribution under the anode edges, which increases <em>V</em>_<em>BR</em>. The results of this work offer a simple and effective approach for reducing electric field crowding under anode edges to enhance the performance of Ga₂O₃-based power devices.</div></div>","PeriodicalId":18240,"journal":{"name":"Materials Science in Semiconductor Processing","volume":"191 ","pages":"Article 109371"},"PeriodicalIF":4.2,"publicationDate":"2025-02-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143402614","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"The interplay between neutral and charged excitons driven by electron irradiation in monolayer WSe2","authors":"Filippo Fabbri,&nbsp;Sreyan Raha,&nbsp;Federica Bianco","doi":"10.1016/j.mssp.2025.109373","DOIUrl":"10.1016/j.mssp.2025.109373","url":null,"abstract":"<div><div>Thanks to their strong excitonic effects and tunable bandgap, two-dimensional transition metal dichalcogenides (TMDs) are the key elements of many micro-optoelectronic, photonic, and next-generation logic devices. The performance optimization of current devices and the development of novel systems have recently boosted the engineering of the optical and electronic properties of the TMDs to externally control the dynamics of their excitons, including exciton formation, interaction, and relaxation. Among the various regulation strategies, electron-irradiation is a facile and deterministic process. Here, we employ this method to regulate the interplay among neutral and charged excitons in monolayer WSe<span><math><msub><mrow></mrow><mrow><mn>2</mn></mrow></msub></math></span> by varying the electron dose. Specifically, we demonstrate that the interaction of 20 keV electrons with the lattice of WSe<span><math><msub><mrow></mrow><mrow><mn>2</mn></mrow></msub></math></span> crystals and the subsequent exposure to ambient air causes the tuning of the charge doping and the formation of a compressive strain field. Their simultaneous actions result in a conversion of neutral excitons into charged ones, while their single contribution is qualitatively disentangled by correlating the binding energy with the excitons intensities. These findings significantly advance our understanding of the WSe<span><math><msub><mrow></mrow><mrow><mn>2</mn></mrow></msub></math></span> optical emission properties engineered by electron-irradiation, shedding light on the intricate interplay between the excitons.</div></div>","PeriodicalId":18240,"journal":{"name":"Materials Science in Semiconductor Processing","volume":"191 ","pages":"Article 109373"},"PeriodicalIF":4.2,"publicationDate":"2025-02-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143403291","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Carrier gas flow rate effects on additive-assisted low-temperature Y2O3 film deposition by atmospheric pressure plasma jet","authors":"Bat-Orgil Erdenezaya ,&nbsp;Md. Shahiduzzaman ,&nbsp;Hirochika Uratani ,&nbsp;Ruka Yazawa ,&nbsp;Yusuke Nakano ,&nbsp;Yasunori Tanaka ,&nbsp;Tetsuya Taima ,&nbsp;Tatsuo Ishijima","doi":"10.1016/j.mssp.2025.109365","DOIUrl":"10.1016/j.mssp.2025.109365","url":null,"abstract":"<div><div>Yttrium oxide (Y₂O₃) film shows great potential as a corrosive resistant material in harsh environments, but Y₂O₃ film deposition methods require cost-effectiveness and high quality. To address these issues, we proposed a novel method of additive-enhancement to the Y₂O₃ precursor solution in plasma enhanced metal–organic chemical vapor deposition. Using this approach, we achieved Y<span><math><msub><mrow></mrow><mrow><mn>2</mn></mrow></msub></math></span>O<span><math><msub><mrow></mrow><mrow><mn>3</mn></mrow></msub></math></span> film deposition at low cost, at low temperatures, and under atmospheric pressure conditions, specifically assisted by a microwave-excited plasma jet. Our results demonstrated that the Y₂O₃ surface morphology quality is notably enhanced, exhibiting a marked increase in particle density with a granular shape and well-covered homogeneous uniform coverage, suggesting enhanced nucleation and rapid growth with the increase of the carrier gas (<span><math><msub><mrow><mi>Q</mi></mrow><mrow><mi>c</mi></mrow></msub></math></span>) flow rate. Results show that the highest deposition rate for Y₂O₃ film was achieved 87.5 nm/min. Grazing incidence X-ray diffractometry revealed excellent polycrystalline structure of Y₂O₃ film. X-ray photoelectron spectroscopy indicated that an increased <span><math><msub><mrow><mi>Q</mi></mrow><mrow><mi>c</mi></mrow></msub></math></span> flow rate shifts bonding from Y–O–Si to Y–O–C, revealing chemical interactions with organic residues or carbon-containing precursor solutions within the film. This method of using PE-MOCVD provides a new pathway to low-cost, low-temperature, and effective deposition of Y<span><math><msub><mrow></mrow><mrow><mn>2</mn></mrow></msub></math></span>O<span><math><msub><mrow></mrow><mrow><mn>3</mn></mrow></msub></math></span> films.</div></div>","PeriodicalId":18240,"journal":{"name":"Materials Science in Semiconductor Processing","volume":"191 ","pages":"Article 109365"},"PeriodicalIF":4.2,"publicationDate":"2025-02-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143394565","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Comparative study on MnO2, Mn2O3, and Mn3O4: Enhancing chemical-mechanical polishing properties of 4H-SiC silicon wafers","authors":"Dexing Cui ,&nbsp;Baoguo Zhang ,&nbsp;Wenhao Xian ,&nbsp;Min Liu ,&nbsp;Shitong Liu ,&nbsp;Pengfei Wu ,&nbsp;Ye Wang","doi":"10.1016/j.mssp.2025.109359","DOIUrl":"10.1016/j.mssp.2025.109359","url":null,"abstract":"<div><div>Silicon carbide (SiC) is an exemplary material known for its characteristic hardness and brittleness. Achieving efficient planarization of SiC substrate is a challenging task. In this paper, the effect of enhancement for different manganese oxides in chemical mechanical polishing of 4H-SiC wafers was compared. Manganese dioxide (MnO₂) provided an excellent improvement ability, compared to Manganese trioxide (Mn₂O₃) and Trimanganese tetroxide (Mn₃O₄), in chemical mechanical polishing of 4H-SiC wafers with material removal rate and surface roughness (Sq) up to 1176 nm/h and 0.258 nm, respectively. Furthermore, a synergistic enhancement method combining MnO₂ and Mn₃O₄ was proposed to improve the polishing performance of 4H-SiC wafers. Then, the corrosion mechanism of 4H-SiC in potassium permanganate solutions with different manganese oxides was investigated by electrochemical analysis. Finally, the enhancement mechanism of manganese oxides for 4H-SiC wafers in chemical mechanical polishing was characterized and analyzed using X-ray photoelectron spectroscopy (XPS) and UV–visible spectroscopy (UV).</div></div>","PeriodicalId":18240,"journal":{"name":"Materials Science in Semiconductor Processing","volume":"191 ","pages":"Article 109359"},"PeriodicalIF":4.2,"publicationDate":"2025-02-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143388010","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Construction of a novel surface plasmon resonance enhanced Z-scheme Cu|CuBi2O4/Bi/Bi2O3 photocatalyst film for effective organic pollutant degradation and simultaneous hydrogen evolution","authors":"Dawei Fang ,&nbsp;Xican Li ,&nbsp;Shengwei Chi ,&nbsp;Jiaqi Dang ,&nbsp;Xue An ,&nbsp;Taiyu Jin ,&nbsp;Jun Wang","doi":"10.1016/j.mssp.2025.109374","DOIUrl":"10.1016/j.mssp.2025.109374","url":null,"abstract":"<div><div>In this investigation, we successfully fabricate a Z-scheme Cu|CuBi₂O₄/Bi/Bi₂O₃ photocatalyst film with Bi nanoparticles that exhibit enhanced surface plasmon resonance (SPR) via an incomplete solid-phase reaction. The photocatalyst film achieves the degradation of organic pollutants on one surface while simultaneously enabling hydrogen evolution on the other surface. This design effectively addresses the challenge of recycling powdered photocatalysts. The structure, composition, and properties of the films are analyzed. Techniques used include XRD, SEM, TEM, EDX, XPS, PL, TPR, and EIS. The study examines the impacts of various factors on the photocatalytic performance of the Z-scheme Cu|CuBi₂O₄/Bi/Bi₂O₃ photocatalyst films. These factors include different compositions, calcination time and temperature, and initial substance concentration. The experiment reveals that after the photocatalyst film is calcined at 500 °C for 2.0 h, the degradation rate of methylene blue (MB) through photocatalysis is determined to be 88.6 %. The amount of hydrogen evolution is determined to be 397.32 μmol/dm². The presence of Bi nanoparticles in the Z-scheme Cu|CuBi₂O₄/Bi/Bi₂O₃ photocatalyst film contributes to efficient Z-scheme charge separation and an enhanced SPR effect. This leads to improved performance. Simultaneously, the potential mechanism of the Z-scheme Cu|CuBi₂O₄/Bi/Bi₂O₃ photocatalytic system is elucidated. The photocatalyst film provides significant guidance in controlling organic pollutants and facilitating large-scale hydrogen production.</div></div>","PeriodicalId":18240,"journal":{"name":"Materials Science in Semiconductor Processing","volume":"191 ","pages":"Article 109374"},"PeriodicalIF":4.2,"publicationDate":"2025-02-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143388009","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Al2O3 growth on Ge by low-temperature (∼90 °C) atomic layer deposition and its application for MOS devices","authors":"Taisei Aso ,&nbsp;Hajime Kuwazuru ,&nbsp;Dong Wang ,&nbsp;Keisuke Yamamoto","doi":"10.1016/j.mssp.2025.109372","DOIUrl":"10.1016/j.mssp.2025.109372","url":null,"abstract":"<div><div>A low-temperature device process is necessary for germanium (Ge) and germanium tin (GeSn)-based novel electronics/optics/spintronics/flexible device applications. Concerning insulating layer formation for gate stack and passivation layer, atomic layer deposition (ALD) has been widely studied and applied due to advantages, as exemplified by precise film thickness control and excellent step coverage. However, low-temperature ALD has not been applied to the abovementioned Ge(Sn)-based novel devices. In this study, we investigated Al₂O₃ deposition using low-temperature (∼90 °C) ALD (without sample heating) on Ge substrates and examined methods to enhance film quality and electrical properties. We found that direct low-temperature ALD on Ge led to dimple formation, which we attribute to uneven ALD growth caused by variations in surface hydrophilicity. To avoid this, we introduced a GeO₂ underlayer formed by electron cyclotron resonance (ECR) plasma before low-temperature ALD, successfully preventing dimples and improving surface uniformity. The resulting Al/Al₂O₃/GeO₂/Ge metal-oxide-semiconductor (MOS) capacitor demonstrated enhanced electrical characteristics. Additionally, a MOS field-effect transistor (FET) with gate stacks fabricated at a maximum gate stack process temperature of 130 °C exhibited typical operational behavior. This low-temperature ALD approach offers a promising pathway for low-temperature gate stack and passivation layer fabrication in emerging Ge(Sn)-based device applications.</div></div>","PeriodicalId":18240,"journal":{"name":"Materials Science in Semiconductor Processing","volume":"190 ","pages":"Article 109372"},"PeriodicalIF":4.2,"publicationDate":"2025-02-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143376922","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}