Materials Science in Semiconductor Processing最新文献

{"title":"Ultrasensitive determination of exosomal CD63: A novel label-free and self-assembled electrochemical aptasensor for cancer diagnosis based on magnetic heterostructured Fe3O4/α-Fe2O3 nanosheets","authors":"Zhihao Xu ,&nbsp;Zhongjun Pan ,&nbsp;Wuzhuofei Luo ,&nbsp;Xuesong Cheng ,&nbsp;Yongjin Li ,&nbsp;Shasha Li ,&nbsp;Ruijiang Liu","doi":"10.1016/j.mssp.2025.109802","DOIUrl":"10.1016/j.mssp.2025.109802","url":null,"abstract":"<div><div>Cluster of Differentiation 63 (CD63) is one of the core marker proteins of exosomes and has been widely used as a biomarker for early screening of various cancers such as ovarian cancer and lung cancer, thus, its rapid and ultrasensitive detection is of great significance. This work presented a label-independent electrochemical aptamer (Apt)-based sensing platform for ultrasensitive exosomal CD63 determination. The core innovation lay in the development of magnetic Fe₃O₄/α-Fe₂O₃@Au-Apt complex probe, which streamlined operation via magnetic separation, improved antifouling performance through magnetic self-assembly technology, enhanced sensitivity by capitalizing on the superior conductivity of Au nanoparticles (AuNPs) and ensured specificity through the high-affinity interaction between aptamers and target. AuNPs were loaded on the surface of Fe₃O₄/α-Fe₂O₃ to improve its electrical conductivity while providing an anchor for the binding of thiol-modified Apt, and the bonding was achieved through Au-S bonds. After capturing the target, magnetic self-assembly was performed on the electrode surface for rapid detection. Under optimum conditions, the aptasensor demonstrated a linear response to CD63 between 100 pg/mL and 1 μg/mL, with lower detection limit reaching 13.4 pg/mL (S/N = 3). Furthermore, human serum samples validation achieved favorable recoveries (100.82–106.45 %), RSDs&lt;3 %, confirming its robustness in complex matrices. Such an assay not only propels exosome-based liquid biopsy but also provides a novel strategy for diverse cancer related biomarkers detection through modular design of probe molecules and their synergistic incorporation with nanomaterials.</div></div>","PeriodicalId":18240,"journal":{"name":"Materials Science in Semiconductor Processing","volume":"198 ","pages":"Article 109802"},"PeriodicalIF":4.2,"publicationDate":"2025-06-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144366445","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Multiple-step Siconi pre-clean advantages for Ni(Pt)Si film formation in the frame of advanced FDSOI technology development","authors":"Magali Grégoire ,&nbsp;Fabriziofranco Morris Anak ,&nbsp;Camille Sgrillo ,&nbsp;Jean-Gabriel Mattei ,&nbsp;Hugo Nuez ,&nbsp;Karen Dabertrand ,&nbsp;Fabienne Ponthenier ,&nbsp;Dominique Mangelinck","doi":"10.1016/j.mssp.2025.109783","DOIUrl":"10.1016/j.mssp.2025.109783","url":null,"abstract":"<div><div>In the development of 28 nm Fully Depleted Silicon On Insulator (FDSOI) technology utilizing high-k metal gate transistors, Ni-based silicide contacts are essential for active silicon regions. The integration of metal gate transistors with the Ni(Pt)Si formation process presents significant challenges, particularly regarding surface preparation prior to Ni (10 at.% Pt) deposition. This step is critical as it can facilitate the propagation of Sulfuric Peroxide Mixture (SPM) chemistry during Ni(Pt)Si formation, potentially leading to the removal of the TiN layer within transistor gates, commonly referred to as \"black gates”. To address these challenges, various NF₃/NH₃ dry pre-clean processes, known as the Siconi process, have been explored to enhance Ni(Pt)Si thin film formation at reduced dimensions without compromising the integrity of high-k metal gate structures. Notably, a multi-step Siconi process has significantly reduced non-uniformity issues of the Ni(Pt)Si thickness on blanket wafers. Additionally, a distinct distribution of fluorine species is observed at the interface between the intermixing layer and the silicon substrate, with potential new bond formations identified in multi-step processes. Furthermore, substantial improvements in silicide resistance and SRAM yield have been recorded, attributed to the reduction of \"missing NiSi\" and \"black gates\" defects through the implementation of this novel surface preparation approach.</div></div>","PeriodicalId":18240,"journal":{"name":"Materials Science in Semiconductor Processing","volume":"198 ","pages":"Article 109783"},"PeriodicalIF":4.2,"publicationDate":"2025-06-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144366443","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"A first-principles study of the structural evolution and strain-induced metallic properties of the 2D cubic III-N (X = Al, Ga) intercalated structures","authors":"Xuhao He ,&nbsp;Yibo Ma ,&nbsp;Jian Zhang ,&nbsp;Yonghui Du ,&nbsp;Chao Zhang ,&nbsp;Jia Li","doi":"10.1016/j.mssp.2025.109800","DOIUrl":"10.1016/j.mssp.2025.109800","url":null,"abstract":"<div><div>The application of dimensionality reduction significantly enhances the utility of these materials in the semiconductor domain. Bulk AlN and GaN are wide-bandgap semiconductors, yet they transform into narrow-bandgap semiconductors when structured into two-dimensional (2D) configurations. The innovation in designing and synthesizing novel 2D intercalated layer structures enables superior control over electrical and optical properties compared to their single-phase pure materials. The materials formed by (111)-oriented AlN and GaN can be structured into 2D heterostructures, showcasing remarkable structural stability and undergoing a semiconductor-to-metallic transition under compressive stress. Additionally, optical analyses reveal that GaN-AlN-GaN intercalated structures exhibit superior light absorption capacity and reflectivity compared to AlN-GaN-AlN configurations. Our research predicts that 2D cubic III-N (X = Al, Ga) intercalated structures will offer profound insights into the fundamental mechanisms of these materials and pave the way for enhancing next-generation electronic and optoelectronic devices.</div></div>","PeriodicalId":18240,"journal":{"name":"Materials Science in Semiconductor Processing","volume":"198 ","pages":"Article 109800"},"PeriodicalIF":4.2,"publicationDate":"2025-06-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144470930","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Organic memristor based on graphene oxide quantum dots: PEDOT-PSS composite film","authors":"Xuechen Wang ,&nbsp;Zexin Zhu ,&nbsp;Wei Li ,&nbsp;Liting Yang ,&nbsp;Jinjin Zhao ,&nbsp;Ping Wang ,&nbsp;Yanxia Cui ,&nbsp;Zhixiang Gao ,&nbsp;Wenshan Qu","doi":"10.1016/j.mssp.2025.109798","DOIUrl":"10.1016/j.mssp.2025.109798","url":null,"abstract":"<div><div>The two-terminal memristor, characterized by their low power consumption, tunable resistance, simple structure, and compatibility with CMOS processes, have found applications in memory storage, logic circuits, and synaptic functions of the simulated human brain. Graphene oxide quantum dots (GO-QDs), a zero-dimensional nanocarbon material, are noted for their low cost and eco-friendliness, making them suitable for electrocatalysis and the fabrication of various optoelectronic devices such as batteries, supercapacitors, and light-emitting diodes. In this paper, we report a two-terminal memristor based on GO-QDs doped with poly(3,4-ethylenedioxythiophene)-poly(styrenesulfonate) (PEDOT-PSS). Through systematic optimization of our experimental protocol, we found that a doping concentration of 60 % resulted in optimal device performance, achieving an ON/OFF current ratio (<em>I</em>_{<em>on/off</em>}) up to 10⁴ and retention capability lasting up to 10⁴ s. Through the analysis of the optoelectronic properties of the films, fitting of the I-V characteristics, and electrochemical impedance spectroscopy (EIS) tests, we confirmed that the resistive switching mechanism is the trapping and detrapping process of charge traps induced by PEDOT-PSS or GO-QDs.</div></div>","PeriodicalId":18240,"journal":{"name":"Materials Science in Semiconductor Processing","volume":"198 ","pages":"Article 109798"},"PeriodicalIF":4.2,"publicationDate":"2025-06-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144366446","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Effects of replacing Cu with Ni and Ni-Zn on the structural, magnetic, and thermoelectric properties of the solution-processed Cu12Sb4S13 tetrahedrites","authors":"Oleksandr Dobrozhan ,&nbsp;Roman Pshenychnyi ,&nbsp;Maksym Yermakov ,&nbsp;Bohdan Boiko ,&nbsp;Vladimír Tkáč ,&nbsp;Serhii Vorobiov ,&nbsp;Anatoliy Opanasyuk","doi":"10.1016/j.mssp.2025.109803","DOIUrl":"10.1016/j.mssp.2025.109803","url":null,"abstract":"<div><div>This study investigates the effects of copper substitution with transition metals, specifically nickel (Ni) and nickel-zinc (Ni-Zn), on the thermoelectric performance of Cu₁₂Sb₄S₁₃ tetrahedrites. The tetrahedrite nanocrystals were synthesized using a scalable, cost-effective polyol method, followed by annealing, cold pressing, and sintering. X-ray diffraction (XRD) analysis revealed that Ni and Ni-Zn substitutions result in a single-phase tetrahedrite with a cubic crystal structure. The increase in Ni content level causes a contraction of the unit cell, while the increase in Zn-Ni content level leads to an initial unit cell expansion followed by further contraction, indicating successful incorporation of transition metals at Cu sites. Raman spectroscopy showed a progressive disorder in the sublattices with Cu−S and Sb−S bonds due to Ni and Zn incorporation, with no evidence of secondary phase formation. Scanning electron microscopy (SEM) and elemental mapping confirmed that the tetrahedrites were dense and compositionally uniform. Magnetic susceptibility measurements indicated that Ni substitution increases the density of states (DOS) at the Fermi level, while Ni-Zn substitution slightly reduces it. The analysis of thermoelectric properties revealed that Ni substitution reduces both power factor (<em>PF</em>) and electronic thermal conductivity (<em>κ</em>_e) in the tetrahedrites, while Ni-Zn substitution results in the exceptionally low <em>κ</em>_e values, achieving a reduction of up to 88 % compared to pristine Cu₁₂Sb₄S₁₃. This study highlights the potential of Ni and Ni-Zn substitutions at Cu sites in the tetrahedrites as promising, low-cost materials for thermoelectric applications, offering a feasible route for enhancing their thermoelectric performance through transition metal substitution.</div></div>","PeriodicalId":18240,"journal":{"name":"Materials Science in Semiconductor Processing","volume":"198 ","pages":"Article 109803"},"PeriodicalIF":4.2,"publicationDate":"2025-06-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144366447","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Investigation into the performance and surge current robustness of 1200V SiC MOSFETs with different JFET doping designs","authors":"Yuhan Duan,&nbsp;Jiuyang Tang,&nbsp;Pan Liu,&nbsp;Qingchun Jon Zhang","doi":"10.1016/j.mssp.2025.109730","DOIUrl":"10.1016/j.mssp.2025.109730","url":null,"abstract":"<div><div>The optimization of JFET doping in SiC MOSFETs is critical for enhanced high-frequency performance and short-circuit capability, yet systematic investigations of its impacts on surge current robustness, which may occur in overcurrent scenarios, remain insufficient. In this article, 1200V planar gate SiC MOSFETs with different JFET doping concentrations were fabricated by adjusting the JFET implantation process within an appropriate range, ensuring practical device performance. The influence of JFET doping designs was evaluated for device performance, including static characteristics across 25 °C to 175 °C and capacitance characteristics. Furthermore, surge current robustness was comprehensively examined under three gate bias conditions (<span><math><msub><mrow><mi>V</mi></mrow><mrow><mtext>gs</mtext></mrow></msub></math></span>=-6V/<span><math><msub><mrow><mi>V</mi></mrow><mrow><mtext>gs</mtext></mrow></msub></math></span>=0V/<span><math><msub><mrow><mi>V</mi></mrow><mrow><mtext>gs</mtext></mrow></msub></math></span>=15V) for both forward (<span><math><msup><mrow><mn>1</mn></mrow><mrow><mtext>st</mtext></mrow></msup></math></span>) and reverse (<span><math><msup><mrow><mn>3</mn></mrow><mrow><mtext>rd</mtext></mrow></msup></math></span>) surge scenarios, through detailed waveform analysis, performance degradation, and decapsulation. For the case of single pulse, the tolerance increased with higher JFET doping under positive <span><math><msub><mrow><mi>V</mi></mrow><mrow><mtext>gs</mtext></mrow></msub></math></span>, while maintaining similar performance under the other conditions. During repetitive surge testing, gate oxide degradation caused by varying carrier tunneling mechanisms was investigated via Fowler–Nordheim (F–N) tunneling analysis, and package degradation induced by cumulative electrical and thermal stress was also assessed. Additionally, single pulse surge failure modes and repetitive surge-induced package degradation were analyzed using Scanning Electron Microscopy (SEM) and Scanning Acoustic Tomography (SAT). This work provides design guidelines and a valuable reference for optimizing JFET doping in SiC MOSFETs.</div></div>","PeriodicalId":18240,"journal":{"name":"Materials Science in Semiconductor Processing","volume":"198 ","pages":"Article 109730"},"PeriodicalIF":4.2,"publicationDate":"2025-06-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144338484","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Twitching inherent properties of Sm3+ ions doped BaZrO3 nanophosphors for optoelectronic application","authors":"J. Abimalar ,&nbsp;S. Adline Benila ,&nbsp;V. Anslin Ferby","doi":"10.1016/j.mssp.2025.109768","DOIUrl":"10.1016/j.mssp.2025.109768","url":null,"abstract":"<div><div>In this study, we report the synthesis and comprehensive characterization of undoped and samarium (Sm³⁺) doped barium zirconate (BaZrO₃) nanophosphors with varying Sm³⁺ concentrations (2, 5, and 10 wt%), prepared via the sol-gel auto-combustion method. The primary aim of this work is to develop high-performance, Sm³⁺-activated BaZrO₃ nanophosphors with enhanced optical and electrical functionalities for next-generation optoelectronic applications. Though BaZrO₃ is well known for its thermal stability and dielectric properties, its potential as a host matrix for rare-earth (RE) doped luminescent materials remains underexplored. This study seeks to fill that gap by investigating the structural, optical, and dielectric response of Sm³⁺-incorporated BaZrO₃ nanophosphors. A suite of advanced analytical techniques was employed to elucidate the physicochemical properties of the synthesized nanophosphors. X-ray diffraction (XRD) confirmed the phase purity and revealed a decreasing crystallite size from 47 nm to 20 nm with Sm³⁺ doping concentration. Fourier-transform infrared (FTIR) and Raman spectroscopy validated the vibrational characteristics and local bonding environment of the host-dopant system. Elemental distribution were examined using energy dispersive X-ray spectroscopy (EDX). High-resolution transmission electron microscopy (HRTEM) confirmed the nanoscale dimensions and moderate agglomeration. Dielectric spectroscopy and impedance analysis demonstrated that ionic conductivity improved with reduced bulk resistance, indicating potential for solid-state electrolyte applications. Optical studies using ultraviolet–visible diffuse reflectance spectroscopy (UV–Vis DRS) revealed a decrease in bandgap values from 3.64 eV to 3.52 eV with Sm³⁺ doping concentration, thereby enhancing the optical properties of prepared nanophosphors. Furthermore, photoluminescence (PL) spectroscopy under 403 nm excitation revealed three intense emission bands at 540 nm (green), 600 nm (orange-red), and 644 nm (red). Notably, the 10 wt% Sm³⁺ doped nanophosphors exhibited a high colour purity of 90.57 %, emphasizing its suitability for high-quality luminescent applications. The novelty of this work lies in the strategic doping of Sm³⁺ into the BaZrO₃ lattice to simultaneously tailor its photoluminescent and electrical behaviour, an approach that expands the multifunctional capabilities of this perovskite material. These findings suggest that Sm³⁺ doped BaZrO₃ nanophosphors act as a promising material for applications in optoelectronic devices, particularly in solid-state lighting and display technologies.</div></div>","PeriodicalId":18240,"journal":{"name":"Materials Science in Semiconductor Processing","volume":"198 ","pages":"Article 109768"},"PeriodicalIF":4.2,"publicationDate":"2025-06-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144338420","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Enhancing the performance in p-type SnO TFTs through SiC co-sputtering and oxygen vacancy control","authors":"Rauf Khan ,&nbsp;Abdullah Al Moyeen ,&nbsp;Ahatashamul Islam ,&nbsp;Md Ahsan Habib ,&nbsp;Jarin Tasnim Heia ,&nbsp;Muhibul Haque Bhuyan ,&nbsp;Kannadassan Dhanaraj","doi":"10.1016/j.mssp.2025.109793","DOIUrl":"10.1016/j.mssp.2025.109793","url":null,"abstract":"<div><div>The realization of high-performance p-type oxide semiconductors is a pivotal milestone in achieving complementary metal-oxide-semiconductor (CMOS) technology based on transparent electronics. However, the thermodynamic instability of the Sn²⁺ oxidation state and the prevalence of oxygen vacancies in SnO thin films critically hinder their electronic performance. In this study, we present a novel strategy to enhance the structural and electrical properties of p-type SnO thin-film transistors (TFTs) through co-sputtering with silicon carbide (SiC), followed by high-vacuum post-deposition annealing (HVPDA). By leveraging the high bond dissociation energies of Si–O and C–O, oxygen vacancies were effectively suppressed, thereby stabilizing the metastable Sn²⁺ state and promoting the formation of phase-pure SnO. Structural analyses via X-ray diffraction and Raman spectroscopy confirmed the selective crystallization of SnO without the emergence of SnO₂ or metallic Sn phases, particularly at an optimized annealing temperature of 300 °C. Hall effect measurements demonstrated a clear trend of reduced carrier density and enhanced hole mobility (up to 2.41 cm²/V·s) with increasing SiC concentration. The fabricated back-gated TFTs showed robust p-type conduction, achieving a peak field-effect mobility of 1.5 cm²/V·s, and I_ON/I_OFF ratio exceeding 3.7 × 10⁴, alongside enhanced subthreshold behavior. These findings highlight the synergistic role of SiC co-sputtering and HVPDA in tailoring the microstructure and defect landscape of SnO-based semiconductors, establishing a promising pathway for the next generation of high-performance, transparent, p-type oxide TFTs.</div></div>","PeriodicalId":18240,"journal":{"name":"Materials Science in Semiconductor Processing","volume":"198 ","pages":"Article 109793"},"PeriodicalIF":4.2,"publicationDate":"2025-06-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144329551","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"A comparative study of threading dislocations in AlGaN/GaN heterostructures grown on Si substrates with different buffer structures","authors":"Shuang Zhao,&nbsp;Changrun Cai,&nbsp;Qizhi Li,&nbsp;Zidong Cai,&nbsp;Yangyang Zhang,&nbsp;Yidan Chen,&nbsp;Fangren Shen,&nbsp;Lei Yang,&nbsp;Rongjian Bian,&nbsp;Hongyan Liu,&nbsp;Wei Zeng,&nbsp;Kuang-Tse Ho","doi":"10.1016/j.mssp.2025.109788","DOIUrl":"10.1016/j.mssp.2025.109788","url":null,"abstract":"<div><div>Effective characterization and suppression of threading dislocations (TDs) via optimized buffer architectures represent critical objectives in developing high-performance GaN high electron mobility transistor (HEMT) electronic devices. This study presents a comparative investigation of TDs characterization in GaN/AlGaN heterostructure grown on Si substrate with two buffer architectures: superlattice (SL) and step-graded (SG) AlGaN. Combining electron channeling contrast imaging (ECCI), defect-selective etching, high-resolution X-ray diffraction (HRXRD), and transmission electron microscopy (TEM), we systematically evaluate both near-surface and bulk threading dislocation behaviors. The integration of ECCI with a Python script enabled automated TD quantification, enhancing measurement precision. All results consistently demonstrate that SL-buffered heterostructures exhibit ∼46 % lower near-surface TD density compared to SG-AlGaN counterparts. Cross-sectional TEM analysis revealed that the discrepancy in dislocation density between two GaN-on-Si epitaxial samples originates from the buffer structure governed stress control and dislocation filtering efficacy, with SL-buffered GaN-on-Si samples demonstrating superior TDs blocking effect and near-surface TD reduction. Our study establishes a framework for efficient and precise TD assessment via multi-technique characterizations, demonstrating superior TD filtering capability of the SL-buffered structure for fabricating high-performance GaN/AlGaN heterostructure HEMT devices with reduced dislocation densities.</div></div>","PeriodicalId":18240,"journal":{"name":"Materials Science in Semiconductor Processing","volume":"198 ","pages":"Article 109788"},"PeriodicalIF":4.2,"publicationDate":"2025-06-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144329550","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Implementation of thin film metallic-glass/Cu (TFMG/Cu) Bi-layer as diffusion barrier in Cu/Sn/Cu bonding structures for IC interconnection","authors":"Chi-Hang Lin ,&nbsp;Kai-An Yang ,&nbsp;Yu-Qian Zhang ,&nbsp;Ming-Tzer Lin","doi":"10.1016/j.mssp.2025.109787","DOIUrl":"10.1016/j.mssp.2025.109787","url":null,"abstract":"<div><div>The development of three-dimensional integrated circuits and advancements in electronic packaging technology have increased the volume fraction of intermetallic compounds during the miniaturization of solder joints, thereby dominating the material properties of the solder joints. Thin film of metallic glass (TFMG) is an excellent diffusion barrier material. When maintained below its crystallization temperature, it retains its amorphous state, meaning that its barrier performance is completely independent of film thickness, and they exhibit good thermal stability. This characteristic provides significant advantages for the miniaturization of next-generation electronic devices. To ensure that a moderate amount of IMC remain in the solder joints without excessive growth, this study proposes the use of a bilayer thin film composed of metallic glass (Zr₆₉Cu₂₄Ti₇) and Cu as a diffusion barrier to regulate the interfacial reaction at the Cu/Sn/Cu interface. We investigated the influence of thermal compression bonding temperature on the development of IMC regulated by the use of a bilayer thin film diffusion barrier and showed that thermal compression bonding had optimal results at temperatures between 250 °C and 300 °C. Within this temperature range, the bilayer thin film effectively suppressed the excessive diffusion and reaction between Cu and Sn, reducing IMC overgrowth and preventing the formation of Kirkendall voids. The rounded Cu₆Sn₅ were the main IMC that formed in random distribution within the solder joints. This controlled diffusion promoted uniform and predictable IMC growth, effectively managing IMC morphology during bonding. It can be observed that this enhances resistance to thermal and mechanical stresses commonly encountered in 3D interconnect applications, contributing to the advancement and application of 3D IC packaging technologies.</div></div>","PeriodicalId":18240,"journal":{"name":"Materials Science in Semiconductor Processing","volume":"198 ","pages":"Article 109787"},"PeriodicalIF":4.2,"publicationDate":"2025-06-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144329549","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}