Study on the nano-cutting mechanism of ion-implanted amorphous layers in single-crystal silicon with insufficient amorphization effects

Ion implantation technology can create an amorphous layer on the surface of single-crystal silicon to improve the efficiency and precision of nano-cutting processes. However, incomplete amorphization at the end of ion implantation may result in residual crystalline regions within the amorphous layer. In this study, a nano-cutting model incorporating a single residual crystalline protrusion within an amorphous layer was developed using molecular dynamics simulations. The influence of such residual crystalline protrusions on material distribution, phase transformation, structural damage, cutting forces, and temperature evolution during the nano-removal process was systematically investigated. Simulation results indicate that the crystal protrusions in the amorphous layer hinder the plastic flow of the amorphous material. Furthermore, the removal of non-uniform brittle fractures and protrusions during the cutting process also increases the cutting force and cutting temperature. The presence of protrusions also leads to an increase in stress during the cutting process and an expansion of local stress concentration areas within the crystalline material. This study offers theoretical support for optimizing the removal process of the ion implantation-modified layer in single-crystal silicon.