在铟镓锌氧化物前后通道中掺杂氟，提高了晶体管抗氢稳定性

IF 4.6 3区工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC

Materials Science in Semiconductor Processing Pub Date : 2025-10-16 DOI:10.1016/j.mssp.2025.110147

Changjun No, Chang-Yun Na, Sung M. Cho

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引用次数: 0

摘要

系统研究了氟(F)掺杂对铟镓锌氧化物（IGZO）薄膜晶体管（TFTs）氢稳定性的影响。通过在IGZO的前后通道中分别引入F，提高了其抗氢性能。通过分析定向氢暴露下器件特性的变化来阐明F的作用，这取决于特定的F掺杂位置。IGZO中的F原子优先吸引和固定进入的氢，有效减轻其对电性能的不利影响。值得注意的是，即使在远离导电前通道的后通道中掺杂F，也能显著提高稳定性，而在前通道中额外掺杂F则能进一步提高稳定性。实验结果表明，在IGZO中掺杂双侧f可以显著提高tft的耐氢性能。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

Improved transistor stability against hydrogen by fluorine doping in indium-gallium-zinc-oxide front and back channels

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Improved transistor stability against hydrogen by fluorine doping in indium-gallium-zinc-oxide front and back channels

The impact of fluorine (F) doping on the hydrogen stability of indium-gallium-zinc oxide (IGZO) thin-film transistors (TFTs) was systematically investigated. Enhanced hydrogen resistance was achieved by independently introducing F into both the front and back channels of IGZO. The role of F was elucidated by analyzing changes in device characteristics under directional hydrogen exposure, depending on the specific F-doping location. F atoms in IGZO preferentially attract and immobilize incoming hydrogen, effectively mitigating its adverse impact on electrical performance. Notably, even F doping confined to the back channel—remote from the conductive front channel—yielded substantial improvements in stability, while additional doping in the front channel provided further enhancement. These findings experimentally demonstrate that dual-side F-doping in IGZO significantly enhances the hydrogen tolerance of TFTs.

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来源期刊

Materials Science in Semiconductor Processing 工程技术-材料科学：综合

CiteScore

8.00

自引率

4.90%

发文量

780

审稿时长

42 days

期刊介绍： Materials Science in Semiconductor Processing provides a unique forum for the discussion of novel processing, applications and theoretical studies of functional materials and devices for (opto)electronics, sensors, detectors, biotechnology and green energy. Each issue will aim to provide a snapshot of current insights, new achievements, breakthroughs and future trends in such diverse fields as microelectronics, energy conversion and storage, communications, biotechnology, (photo)catalysis, nano- and thin-film technology, hybrid and composite materials, chemical processing, vapor-phase deposition, device fabrication, and modelling, which are the backbone of advanced semiconductor processing and applications. Coverage will include: advanced lithography for submicron devices; etching and related topics; ion implantation; damage evolution and related issues; plasma and thermal CVD; rapid thermal processing; advanced metallization and interconnect schemes; thin dielectric layers, oxidation; sol-gel processing; chemical bath and (electro)chemical deposition; compound semiconductor processing; new non-oxide materials and their applications; (macro)molecular and hybrid materials; molecular dynamics, ab-initio methods, Monte Carlo, etc.; new materials and processes for discrete and integrated circuits; magnetic materials and spintronics; heterostructures and quantum devices; engineering of the electrical and optical properties of semiconductors; crystal growth mechanisms; reliability, defect density, intrinsic impurities and defects.