Materials Science in Semiconductor Processing最新文献

{"title":"Construction of a novel surface plasmon resonance enhanced Z-scheme Cu|CuBi2O4/Bi/Bi2O3 photocatalyst film for effective organic pollutant degradation and simultaneous hydrogen evolution","authors":"Dawei Fang ,&nbsp;Xican Li ,&nbsp;Shengwei Chi ,&nbsp;Jiaqi Dang ,&nbsp;Xue An ,&nbsp;Taiyu Jin ,&nbsp;Jun Wang","doi":"10.1016/j.mssp.2025.109374","DOIUrl":"10.1016/j.mssp.2025.109374","url":null,"abstract":"<div><div>In this investigation, we successfully fabricate a Z-scheme Cu|CuBi₂O₄/Bi/Bi₂O₃ photocatalyst film with Bi nanoparticles that exhibit enhanced surface plasmon resonance (SPR) via an incomplete solid-phase reaction. The photocatalyst film achieves the degradation of organic pollutants on one surface while simultaneously enabling hydrogen evolution on the other surface. This design effectively addresses the challenge of recycling powdered photocatalysts. The structure, composition, and properties of the films are analyzed. Techniques used include XRD, SEM, TEM, EDX, XPS, PL, TPR, and EIS. The study examines the impacts of various factors on the photocatalytic performance of the Z-scheme Cu|CuBi₂O₄/Bi/Bi₂O₃ photocatalyst films. These factors include different compositions, calcination time and temperature, and initial substance concentration. The experiment reveals that after the photocatalyst film is calcined at 500 °C for 2.0 h, the degradation rate of methylene blue (MB) through photocatalysis is determined to be 88.6 %. The amount of hydrogen evolution is determined to be 397.32 μmol/dm². The presence of Bi nanoparticles in the Z-scheme Cu|CuBi₂O₄/Bi/Bi₂O₃ photocatalyst film contributes to efficient Z-scheme charge separation and an enhanced SPR effect. This leads to improved performance. Simultaneously, the potential mechanism of the Z-scheme Cu|CuBi₂O₄/Bi/Bi₂O₃ photocatalytic system is elucidated. The photocatalyst film provides significant guidance in controlling organic pollutants and facilitating large-scale hydrogen production.</div></div>","PeriodicalId":18240,"journal":{"name":"Materials Science in Semiconductor Processing","volume":"191 ","pages":"Article 109374"},"PeriodicalIF":4.2,"publicationDate":"2025-02-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143388009","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Al2O3 growth on Ge by low-temperature (∼90 °C) atomic layer deposition and its application for MOS devices","authors":"Taisei Aso ,&nbsp;Hajime Kuwazuru ,&nbsp;Dong Wang ,&nbsp;Keisuke Yamamoto","doi":"10.1016/j.mssp.2025.109372","DOIUrl":"10.1016/j.mssp.2025.109372","url":null,"abstract":"<div><div>A low-temperature device process is necessary for germanium (Ge) and germanium tin (GeSn)-based novel electronics/optics/spintronics/flexible device applications. Concerning insulating layer formation for gate stack and passivation layer, atomic layer deposition (ALD) has been widely studied and applied due to advantages, as exemplified by precise film thickness control and excellent step coverage. However, low-temperature ALD has not been applied to the abovementioned Ge(Sn)-based novel devices. In this study, we investigated Al₂O₃ deposition using low-temperature (∼90 °C) ALD (without sample heating) on Ge substrates and examined methods to enhance film quality and electrical properties. We found that direct low-temperature ALD on Ge led to dimple formation, which we attribute to uneven ALD growth caused by variations in surface hydrophilicity. To avoid this, we introduced a GeO₂ underlayer formed by electron cyclotron resonance (ECR) plasma before low-temperature ALD, successfully preventing dimples and improving surface uniformity. The resulting Al/Al₂O₃/GeO₂/Ge metal-oxide-semiconductor (MOS) capacitor demonstrated enhanced electrical characteristics. Additionally, a MOS field-effect transistor (FET) with gate stacks fabricated at a maximum gate stack process temperature of 130 °C exhibited typical operational behavior. This low-temperature ALD approach offers a promising pathway for low-temperature gate stack and passivation layer fabrication in emerging Ge(Sn)-based device applications.</div></div>","PeriodicalId":18240,"journal":{"name":"Materials Science in Semiconductor Processing","volume":"190 ","pages":"Article 109372"},"PeriodicalIF":4.2,"publicationDate":"2025-02-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143376922","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"A critical review on improving and moving beyond the 2 nm horizon: Future directions and impacts in next-generation integrated circuit technologies","authors":"Mohamed Morsy,&nbsp;Faycal Znid,&nbsp;Abdallah Farraj","doi":"10.1016/j.mssp.2025.109376","DOIUrl":"10.1016/j.mssp.2025.109376","url":null,"abstract":"<div><div>This review article presents a thorough analysis of the present advancements and forthcoming trends within the integrated circuit (IC) industry, emphasizing its essential role in the fabric of modern technology across several key sectors, including consumer electronics, healthcare, and the automotive industry. As the sector moves beyond the 2 nm technology node, the paper investigates the obstacles to perpetuating Moore's Law, highlighting challenges such as quantum mechanical effects, the need for unprecedented manufacturing precision, and the limitations of existing materials. The review places special emphasis on the significance of cutting-edge innovations such as 3D integration, which layers circuits vertically to enhance connectivity and save space, and the exploration of alternative semiconductor materials like graphene and transition metal dichalcogenides (TMDs), which offer superior electrical, thermal, and mechanical properties. Additionally, it discusses the rise of emerging computing paradigms such as quantum circuits, which leverage the principles of quantum mechanics, and photonic circuits, which use light to achieve ultra-fast data processing speeds. The article also examines the economic and environmental impacts of advancing IC technology, underscoring the need for sustainable practices and new approaches to maintain progress. By addressing these key areas, this review underscores the transformative potential of next-generation IC technologies and their pivotal role in shaping the future of computing and electronics.</div></div>","PeriodicalId":18240,"journal":{"name":"Materials Science in Semiconductor Processing","volume":"190 ","pages":"Article 109376"},"PeriodicalIF":4.2,"publicationDate":"2025-02-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143372953","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Hierarchical CaIn2S4/NiTiO3 heterojunction enhanced removal of hexavalent chromium powered by visible irradiation","authors":"Yuanyuan Wang,&nbsp;Zhanlin Ma,&nbsp;Jian Wang,&nbsp;Jiaqi Ben,&nbsp;Hangmin Guan,&nbsp;Ping Gu,&nbsp;Yingfei Hu","doi":"10.1016/j.mssp.2025.109375","DOIUrl":"10.1016/j.mssp.2025.109375","url":null,"abstract":"<div><div>Given the significance of the visible-light-driven reduction of heavy metal chromium (Cr(VI)), it is promising and challenging to investigate photocatalysts that exhibit strong responsiveness to visible light and possess high carrier separation efficiency. In this research, a CaIn₂S₄/NiTiO₃ Z-scheme heterojunction has been successfully constructed through the in-situ growth of CaIn₂S₄ nanosheets on NiTiO₃ nanorods. The energy band alignment between CaIn₂S₄ and NiTiO₃ in the hierarchical framework facilitated the formation of the heterojunction, which significantly enhanced visible light absorption, promoted the separation of photogenerated carriers, and maintained the high reducing capability of the CaIn₂S₄ conduction band electrons. These synergies enabled superior Cr(VI) removal efficiency. At an optimized CaIn₂S₄ to NiTiO₃ ratio of 1:1, about 95 % removal rate of Cr(VI) was achieved within 80 min of visible-light exposure, accompanied by a reaction rate of 0.036 min⁻¹ that is nearly four times faster than that over CaIn₂S₄. Furthermore, the charge transfer driving force and reaction mechanisms were comprehensively investigated by optoelectronic measurements, emphasizing the crucial roles of electrons (e⁻) in Cr(VI) reduction. This investigation showcases the potential of the CaIn₂S₄/NiTiO₃ Z-scheme heterojunction for photocatalytic applications in Cr(VI)-containing wastewater treatment.</div></div>","PeriodicalId":18240,"journal":{"name":"Materials Science in Semiconductor Processing","volume":"190 ","pages":"Article 109375"},"PeriodicalIF":4.2,"publicationDate":"2025-02-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143372956","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"High-performance solar-blind UV photodetector based on single p-type Cu-doped β-Ga2O3 microwire","authors":"Yan-Ming Wang ,&nbsp;Xue Sui ,&nbsp;Shuo Wang ,&nbsp;Jia-Hui Shi ,&nbsp;Yi-Han Yang ,&nbsp;Qiu-Ju Feng ,&nbsp;Chong Gao ,&nbsp;Jing-Chang Sun","doi":"10.1016/j.mssp.2025.109370","DOIUrl":"10.1016/j.mssp.2025.109370","url":null,"abstract":"<div><div>β-Ga₂O₃ is a ideal material for fabricating solar-blind UV photoelectric detectors.</div><div>However, since the intrinsic β-Ga₂O₃ shows n-type conductivity, achieving p-type has been challenging, thereby hindering the development of β-Ga₂O₃ optoelectronic devices. In this study, we fabricated a photoconductive ultraviolet photodetector based on single Cu-doped β-Ga₂O₃ microwire. Centimeter-scale β-Ga₂O₃ microwires with varying Cu doping contents were synthesized using chemical vapor deposition method. These microwires had a diameter of approximately 30 nm and a length of up to about 0.8 cm. The p-type conductivity of the Cu-doped β-Ga₂O₃ microwires was confirmed through thermoelectric effect testing. Futhermore, we found that the photodetector composed of microwire with Cu molar percentage of 3.4 % demonstrated the best UV detection performance. The single Cu-doped β-Ga₂O₃ microwire detector exhibited excellent solar-blind photodetector performance, characterized by a high responsivity (57.7 A/W under a bias of 10 V), and external quantum efficiency of 28215 % (under a bias of 10 V), and an <em>I</em>_photo/<em>I</em>_dark ratio of 2.66 × 10⁴ @ 10 V, as well as good stability and repeatability. This work provide a simple and efficient method to preparing p-type β-Ga₂O₃ nano/microstructure and high-performance, stable β-Ga₂O₃-based photodetectors.</div></div>","PeriodicalId":18240,"journal":{"name":"Materials Science in Semiconductor Processing","volume":"190 ","pages":"Article 109370"},"PeriodicalIF":4.2,"publicationDate":"2025-02-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143349642","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Study of wet etching on long-wavelength InAs/GaSb Type-II superlattices","authors":"Yuanbo Zhang ,&nbsp;Lidan Lu ,&nbsp;Weiqiang Chen ,&nbsp;Ruixin Gong ,&nbsp;Yuhao Chen ,&nbsp;Lianqing Zhu","doi":"10.1016/j.mssp.2025.109361","DOIUrl":"10.1016/j.mssp.2025.109361","url":null,"abstract":"<div><div>In the specialized arena of long-wave infrared (LWIR) detectors, the InAs/GaSb type-II superlattice (T2SL) has risen in prominence, capturing the keen interest of researchers and engineers. This is primarily because of its unique set of superior properties that contribute to its effectiveness in sensing and detecting long-wave infrared radiation. The current study delves into the realm of wet chemical etching for fast and cost-effective InAs/GaSb type-II superlattice LWIR detectors. The procedure involved a meticulous and systematic variation of the concentrations of key chemicals like citric acid, hydrogen peroxide, and phosphoric acid. The aim of this study was to perform single-variable experiments to elucidate the influence of different component ratios on the etching rate, surface roughness, device sidewall morphology, and the characteristics of surface deposits in etched long-wave nBn structure device. To visually capture the changes in the mesa's sidewall morphology, scanning electron microscopy (SEM) was employed. Energy dispersive spectroscopy (EDS) and X-ray photoelectron spectroscopy (XPS) were utilized to analyze the reaction products on the sidewall and surface. The results from these experiments were compelling. They revealed that when the ratio of H₂O₂ to H₃PO₄ was 1: 1, the surface roughness of the devices after etching was approximately 10 nm, which is considered ideal. Moreover, the sidewall etch angle in this condition approached nearly 70°, suggesting a well-defined etching pattern. An interesting phenomenon is that when the same H₂O₂: H₃PO₄ = 1:1, most of the insoluble Sb₂O₃ deposits can be dissolved with citric acid well. This process resulted in a relatively ideal mesa morphology, meaning the mesa structures were clean and well-defined, which is crucial for efficient detection.</div></div>","PeriodicalId":18240,"journal":{"name":"Materials Science in Semiconductor Processing","volume":"190 ","pages":"Article 109361"},"PeriodicalIF":4.2,"publicationDate":"2025-02-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143372955","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Strain engineering on the electronic bands, mechanical stability, thermal, vibrational and thermoelectric response of PtScSb half-Heusler semiconductor","authors":"Shakeel Ahmad Sofi ,&nbsp;Musallam A.S. Tabook ,&nbsp;Altaf A. Bhat ,&nbsp;Adil Ahmad Bhat ,&nbsp;Imed Boukhris ,&nbsp;Y. Gul ,&nbsp;T.H. Shah ,&nbsp;G. Anjum ,&nbsp;Dinesh C. Gupta","doi":"10.1016/j.mssp.2025.109368","DOIUrl":"10.1016/j.mssp.2025.109368","url":null,"abstract":"<div><div>The noteworthy and dynamic aspects of materials science is to predict an innovative and versatile compounds that enfolds the colossal reaction by the executions of applied stress that imparts the gateway in applied fields. A prompt illustration for enhancement of variability of materials is characteristically established on first principles technique for enlightenment in the variability of compounds. The present manuscript delivers a widespread examination of strain dependent properties including lattice dynamics, thermophysical, mechanical and most significant thermoelectric properties at various levels of PtScSb Heusler material. The impact of applied isotropic strain ranging (−12 % to +4 %) has been keenly scrutinized. From the calculated elastic parameters including Pugh ratio, Young's modulus, Poisson ratio etc., we noticed that a decline trend is observed with the tensile strain and reveals an escalation with the compressive strain. The calculated mechanical parameters (Pugh's and Poisson) validated that the present material is brittle by the application of applied strain. With the intensification in the strain typically up to −12 %, material displays a ductile performance. Additionally, with the escalation of +4 % of tensile strain the present alloy lends towards brittle one. From the examination of bands, the energy band gap drops significantly with intensification in the tensile strength and the escalations of the strain factor. The applied strain effect on lattice dynamics approves the robust stability of PtScSb half Heusler material. The thermoelectric parameters including (lattice thermal conductivity, Seebeck coefficient, electrical conductivity, figure of merit) have been keenly checked at numerous strain levels that approves the material for waste heat recovery systems and as well as technological aspects. The parameters like Debye temperature, Grüneisen parameter etc., have also been predicted at various strain levels to check its thermal stability.</div></div>","PeriodicalId":18240,"journal":{"name":"Materials Science in Semiconductor Processing","volume":"190 ","pages":"Article 109368"},"PeriodicalIF":4.2,"publicationDate":"2025-02-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143349641","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Probing the role of silver and gold based double perovskite halide oxides for optoelectronic and photocatalytic applications","authors":"Attaur Rahman ,&nbsp;Aqsa Abid ,&nbsp;Muhammad Haneef ,&nbsp;Bin Amin ,&nbsp;Yasser Elmasry","doi":"10.1016/j.mssp.2025.109367","DOIUrl":"10.1016/j.mssp.2025.109367","url":null,"abstract":"<div><div>Double perovskite halide oxides have shown great potential in various optoelectronic and photocatalytic applications due to their unique properties. Based on density functional theory (DFT), this study investigates the structural, mechanical, electronic, optical and photocatalytic properties of silver and gold based double perovskite halide oxides Ba₂(Ag/Au)IO₆. The Full-potential linearized augmented plane wave (FP-LAPW) method is used, executed in WIEN2k simulation code. The calculated structural parameters are in good agreement with the experimental results. Both these perovskite compounds exhibit the face centered cubic structure according to the Goldschmidt tolerance factor t_o and octahedral factor μ_o criteria of cubic structure formation. The negative values of formation enthalpy H_f, the elastic properties, and mechanical properties of these compounds demonstrate their thermodynamic and mechanical stability. The band gap values of 2.30(2.07) eV for Ba₂AgIO₆(Ba₂AuIO₆) compounds are estimated by using Perovskite modified Becke-Johnson potential (P-mBJ) plus Hubbard parameter U, revealed significant agreement with the reported values. The observed reduction in the band gap of Ba₂AuIO₆ as compared to Ba₂AgIO₆ is due to the increase in atomic radii of Au over Ag. Furthermore, these compounds possess a direct band gap nature and exhibit promising optical behavior in ultraviolet region. The characteristic optical parameters of these compounds indicate their competency for optoelectronic applications. Moreover, the straddling of standard redox potential within the valence and conduction band edge potentials make them an excellent candidate for hydrogen production from photocatalytic water splitting.</div></div>","PeriodicalId":18240,"journal":{"name":"Materials Science in Semiconductor Processing","volume":"190 ","pages":"Article 109367"},"PeriodicalIF":4.2,"publicationDate":"2025-02-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143317030","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Surfactant-free octahedral Cu2O@Pd nanocrystals with enhanced and multifunctional sensor performances","authors":"Xinmei Liu,&nbsp;Guobin Zhu,&nbsp;Boen Zheng,&nbsp;Wenlong Yang,&nbsp;BoYang Liu","doi":"10.1016/j.mssp.2025.109364","DOIUrl":"10.1016/j.mssp.2025.109364","url":null,"abstract":"<div><div>Biosensing materials are often constrained by their limited functionality, narrow detection range, and restricted sensitivity. In this study, we provided a simple method to synthesize surfactant-free Cu₂O nanocrystals with octahedral structure. The distinctive octahedral structure amplified the specific surface area, thus facilitating Cu₂O nanocrystals to demonstrate an enhanced sensor performance in detecting nitrite and glucose. In the detection of sodium nitrite concentration, the sensitivity octahedral of Cu₂O surpassed that of hexapod Cu₂O in previous studies by an enhanced factor of 2.03, enabling a wide detection range from 0 to 100.0 mM. Moreover, the modification of Cu₂O nanocrystals by Pd could effectively enhance electron transfer and optimized sensor sensitivity. As the modified Pd reaches 15 at%, the Cu₂O@Pd-15 % demonstrated the highest sensitivity (303.05 μA/mM·cm²) for nitrite detection. When the Pd modification rate at the interface was exceeded to 15 at%, the active sites on the surface of Cu₂O would be covered and their quantity would be decreased, which was not conducive to further optimization of Cu₂O sensor performance. The sensor constructed by Cu₂O@Pd-15 % could detect high concentrations of glucose and directly measure the nitrite concentration in an aqueous solution, which remained a challenging for other sensor materials. Notably, Cu₂O@Pd-15 % has been successfully employed in the analysis of sugar content in Coca-Cola, showcasing its multifunctionality and practicality. This work optimized the sensor performance of Cu₂O by integrating the morphological optimization and surface modification, thereby offering an effective strategy for designing the multifunctional sensor materials.</div></div>","PeriodicalId":18240,"journal":{"name":"Materials Science in Semiconductor Processing","volume":"190 ","pages":"Article 109364"},"PeriodicalIF":4.2,"publicationDate":"2025-02-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143317287","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Indium-free Zn-Sn-Al-O based thin-film transistors fabricated by plasma-enhanced atomic layer deposition","authors":"Shice Wei ,&nbsp;Xiaojun Yu ,&nbsp;Bojia Chen ,&nbsp;Jiyuan Zhu ,&nbsp;Xuefeng Wu ,&nbsp;David W. Zhang ,&nbsp;Li Ji ,&nbsp;Qingqing Sun ,&nbsp;Shen Hu","doi":"10.1016/j.mssp.2025.109369","DOIUrl":"10.1016/j.mssp.2025.109369","url":null,"abstract":"<div><div>The escalating demands of advanced display technologies, particularly in virtual and augmented reality applications, necessitate the development of sustainable alternatives to conventional indium-based amorphous oxide semiconductors. This study presents the fabrication and characterization of indium-free zinc-tin-aluminum oxide (ZTAO) thin-film transistors (TFTs) using plasma-enhanced atomic layer deposition (PEALD). Through precise control of PEALD supercycles, we systematically modulate the composition of ZTAO films while maintaining an amorphous structure. The optimized ZTAO (15:15:1) composition demonstrates superior electrical characteristics with a Hall mobility of 13.9 cm² V⁻¹ s⁻¹. Capitalizing on these optimized ZTAO films, we fabricate staggered bottom-gate TFTs and assess their electrical performances. The ZTAO (15:15:1) TFTs emerged as the optimal configuration, demonstrating excellent performance with a lower threshold voltage (−1.46 ± 0.34 V), high current on/off ratio ((1.13 ± 0.53) × 10⁶), remarkable field-effect mobility (10.92 ± 0.14 cm² V⁻¹ s⁻¹), and minimal subthreshold swing (0.48 ± 0.01 V dec⁻¹). Enhancement of the performance is further achieved through post-annealing treatment at 250 °C in air, which also confirms the robust bias stability of devices (threshold voltage shift: 0.76 V and −1.17 V for positive and negative bias stress of 2000 s, respectively). These findings demonstrate the potential of PEALD-based ZTAO as a sustainable and high-performance alternative for next-generation display technologies.</div></div>","PeriodicalId":18240,"journal":{"name":"Materials Science in Semiconductor Processing","volume":"190 ","pages":"Article 109369"},"PeriodicalIF":4.2,"publicationDate":"2025-02-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143317029","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}