Materials Science in Semiconductor Processing最新文献

{"title":"Construction of ZnIn2S4-Au-CdS heterostructure for boosting photothermal-assisted photocatalytic hydrogen production","authors":"Xiaohua Zhao ,&nbsp;Xiaoxiao Liu ,&nbsp;Xiang Liu ,&nbsp;Xueping Zhang ,&nbsp;Shuang Wang ,&nbsp;Shiyi Yang ,&nbsp;Xing Chen","doi":"10.1016/j.mssp.2025.110138","DOIUrl":"10.1016/j.mssp.2025.110138","url":null,"abstract":"<div><div>Photocatalytic hydrogen (H₂) evolution via water splitting offers an environmentally friendly and sustainable approach for converting solar energy into clean fuel. In this study, we constructed an efficient ternary ZnIn₂S₄-Au-CdS (ZIS-Au-CdS) photocatalyst by decorating flower-like ZIS microspheres with Au nanoparticles (NPs) and CdS, significantly enhancing visible-light absorption and utilization. The optimized ZIS-Au-CdS composite achieves remarkable H₂ evolution rates of 8.02 mmol g⁻¹ h⁻¹ under visible light and 11.90 mmol g⁻¹ h⁻¹ under full-spectrum irradiation, representing 11.47- and 7.93-fold enhancements over pure ZIS under the same conditions. The well-matched band structures of ZIS and CdS facilitate the establishment of an internal electric field (IEF) at the heterojunction interfaces, which not only broadens the visible-light absorption range but also significantly promotes the separation of photogenerated charge carriers. In addition, Au NPs function as effective electron mediators at the interface, accelerating charge transfer between ZIS and CdS and further suppressing charge recombination. The photothermal effect from Au NPs also raises the local reaction temperature, contributing to photothermal-assisted photocatalytic H₂ evolution. As a result, the ZIS-Au-CdS photocatalyst demonstrates superior photocatalytic H₂ evolution performance under both visible and full-spectrum irradiation.</div></div>","PeriodicalId":18240,"journal":{"name":"Materials Science in Semiconductor Processing","volume":"202 ","pages":"Article 110138"},"PeriodicalIF":4.6,"publicationDate":"2025-10-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145322202","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Phosphorus doped 2D polymeric graphitic carbon nitride biomaterial: Biological activity and DFT insights with nitrofuran drug interactions","authors":"G. Kausalya Sasikumar ,&nbsp;A. Anitha ,&nbsp;M. Sivanandam ,&nbsp;P. Ponmurugan ,&nbsp;R.R. Shenthilkumar","doi":"10.1016/j.mssp.2025.110117","DOIUrl":"10.1016/j.mssp.2025.110117","url":null,"abstract":"<div><div>Heteroatom-doped graphitic carbon nitride (P-g-CN) has gained immense attention owing to its superior electronic and structural properties which make it suitable for biological applications. In this study, we developed phosphorous-doped graphitic carbon nitride (P-g-CN NBs) using facile thermal polymerization techniques and utilized them for potential biological activity and Density Functional Theory (DFT) studies. The as-synthesized materials were characterized and tested for their anticancer, anti-inflammatory, and antioxidant activities. The anti-cancer activity of P-g-CN NBs exhibited lower cytotoxicity and higher cell viability than undoped g-CN in HeLa cells using the MTT assay. Anti-inflammatory activity was assessed in protein denaturation inhibition studies of Bovine Serum Albumin (BSA), whereas antioxidant activity was assessed using DPPH, ABTS, Superoxide (SO), and phosphomolybdenum (PM) assays. The P-g-CN NBs exhibited excellent radical scavenging activity in DHPH and low IC₅₀ (minimum inhibitory concentration) values (56 ± 0.45 μg/mL) when compared to the IC₅₀ values of g-CN (60 ± 0.12 μg/mL). SO radical scavenging activity revealed that P-g-CN NBs exhibited superior efficiency with an IC₅₀ of 51 ± 0.14 μg/mL, compared to g-CN (IC₅₀: 60 ± 0.34 μg/mL), and was nearly equivalent to that of reference compound ascorbic acid (IC₅₀: 49 ± 0.22 μg/mL). In addition, DFT studies were conducted to understand the interactions between P-g-CN NBs and nitrofuran at the molecular level. We modelled their binding interactions with four nitrofuran compounds: Furaltadone (FTD), Furazolidone (FZD), Nitrofurantoin (NFT), and Nitrofurazone (NFZ). These findings suggest that P-g-CN NBs is safe and effective in biological and environmental applications. This study combined experimental and computational studies to highlight the versatility of P-g-CN NBs.</div></div>","PeriodicalId":18240,"journal":{"name":"Materials Science in Semiconductor Processing","volume":"202 ","pages":"Article 110117"},"PeriodicalIF":4.6,"publicationDate":"2025-10-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145270680","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Pd/PdO-Decorated NiAl-LDHs-Derived NiO/Al2O3 nanosheets for high-temperature H2 detection","authors":"Qinghua Dong ,&nbsp;Junjun Sun ,&nbsp;Huijun Li ,&nbsp;Cong Qin ,&nbsp;Yan Wang ,&nbsp;Jianliang Cao","doi":"10.1016/j.mssp.2025.110130","DOIUrl":"10.1016/j.mssp.2025.110130","url":null,"abstract":"<div><div>Developing hydrogen (H₂) sensors that combine high sensitivity with rapid response/recovery kinetics presents a notable challenge in ensuring the safe use of this clean energy carrier. To address this, Pd/PdO nanoparticles were decorated onto NiO/Al₂O₃ composites derived from NiAl layered double hydroxides (LDHs) via hydrothermal synthesis followed by calcination. Characterization revealed that the optimal 2.0 wt% Pd/PdO-NiO/Al₂O₃ sample showcases a high concentration of oxygen vacancies, a large specific surface area (149.73 m²/g), and abundant porosity. Gas sensing evaluation demonstrated that this material exhibits a significantly enhanced response (2.921) to 100 ppm H₂ at an operating temperature of 350 °C. Crucially, it achieves remarkably fast response and recovery times of 14 and 19 s, respectively. Furthermore, the sensor demonstrates excellent selectivity and long-term stability. This work presents a promising strategy based on Schottky junction engineering within LDH-derived composites for realizing ultrafast and sensitive H₂ detection.</div></div>","PeriodicalId":18240,"journal":{"name":"Materials Science in Semiconductor Processing","volume":"202 ","pages":"Article 110130"},"PeriodicalIF":4.6,"publicationDate":"2025-10-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145270678","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Characteristics of Si channel layer formed through recrystallization using nanosecond laser annealing for monolithic 3D integration","authors":"Hyerin Shin ,&nbsp;Dongmin Yoon ,&nbsp;Chunghee Jo ,&nbsp;Kiseok Lee ,&nbsp;Hoonjung Oh ,&nbsp;Dae-Hong Ko","doi":"10.1016/j.mssp.2025.110121","DOIUrl":"10.1016/j.mssp.2025.110121","url":null,"abstract":"<div><div>Monolithic 3-dimensional integration (M3D) is a promising solution to overcome the limitations of 2-dimensional device scaling. A key challenge in fabricating M3D is the formation of the upper silicon (Si) channel layer under a low thermal budget process. The most viable approach is recrystallizing the amorphous Si layer formed on the dielectric layer using the UV-pulsed laser annealing, due to its short annealing time and high absorption coefficient of amorphous Si. In this research, we aimed to form a continuous single-crystalline Si layer by developing recrystallization process using laser anneal. Notably, we introduced single- and multi-pulse annealing with varying energy densities. Microstructural analysis confirmed that at 700 mJ/cm² and 800 mJ/cm², the epitaxial seed fully melted and recrystallized without collapse of SiO₂ walls. In single-pulse annealing, lateral regrowth resulted in boundary traps and the formation of large grains. In comparison, multi-pulse annealing significantly reduced grain boundary defects and (111) stacking faults by promoting repeated recrystallization along the (100) direction. GI-XRD results further revealed that the Si (400) peak became significantly more dominant than in single-pulse annealing. The recrystallized Si layer through multi-pulse annealing exhibited a single-crystalline structure, aligned in the same (100) orientation as the bottom Si layer, with reduced residual defects.</div></div>","PeriodicalId":18240,"journal":{"name":"Materials Science in Semiconductor Processing","volume":"202 ","pages":"Article 110121"},"PeriodicalIF":4.6,"publicationDate":"2025-10-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145270677","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Capacitive-coupled non-pinched I–V and type II memristive behavior of carbon-TiO2 nanocomposite films fabricated through aerosol flame synthesis","authors":"Abdul Khalique ,&nbsp;Gianluigi De Falco ,&nbsp;Patrizia Minutolo ,&nbsp;Mario Commodo ,&nbsp;Andrea D'Anna","doi":"10.1016/j.mssp.2025.110125","DOIUrl":"10.1016/j.mssp.2025.110125","url":null,"abstract":"<div><div>Titanium dioxide (TiO₂) is a long-established semiconductor material used in several electrical and electronical applications, including random-access memories, biohybrid interfaces, sensors, and neuromorphic computing. Nevertheless, such applications are still at an early development stage, constrained by fundamental gaps in understanding and technological limitations. Functional memristive characteristics of TiO₂ rely extensively on the processes, including synthesis techniques, fabrication, and physicochemical modifications. In this work, nanostructured composite films of Carbon (Soot) and TiO₂ are fabricated through a custom-made aerosol flame synthesis (AFS) reactor using a facile one-step synthesis technique with good control over nanostructure, crystallinity, defect chemistry and carbon component inclusions. Scanning mobility particle sizer (SMPS) was employed to analyze particle size distribution in the flame. Microstructures and composition of the C-TiO₂ film were characterized through Raman spectroscopy, UV–VIS spectrophotometry, atomic force microscopy (AFM), and current-voltage I-V measurements. The presence of carbon and TiO₂ across the film was confirmed by the Raman spectrum and quantified by light absorption. The electrical characterization demonstrated a capacitive-coupled non-zero crossing and type-II hysteresis behavior of the C-TiO₂ nanostructured film. Following carbon compositing, TiO₂ exhibited enhanced optical absorption in the visible spectral region and electrical conductivity. The improvement in the conduction pathways was evidenced by the I-V measurements of the TiO₂ film and the C-TiO₂ film. A phenomenon of disappearance and reappearance of the capacitive-coupled memresistive effect was observed after dark and sunlight exposure, most likely due to the photosensitive nature of TiO₂ in the nanocomposite film. This proof-of-concept study testifies that, due to such properties, C-TiO₂ nanocomposite films produced via AFS can be considered as promising future candidates for applications in the field of next-generation electronic devices.</div></div>","PeriodicalId":18240,"journal":{"name":"Materials Science in Semiconductor Processing","volume":"202 ","pages":"Article 110125"},"PeriodicalIF":4.6,"publicationDate":"2025-10-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145270685","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Novel Z-scheme AgI@PbBiO2Br heterojunction for efficient photodegradation of organic pollutants and bacteria inactivation: DFT simulation, explore active radicals, and mechanism insight","authors":"Ahsan Nazir ,&nbsp;Ameena Tur Rasool ,&nbsp;Chuntao Chen ,&nbsp;Otabek Mukhitdinov ,&nbsp;Doniyor Jumanazarov ,&nbsp;Dongping Sun","doi":"10.1016/j.mssp.2025.110128","DOIUrl":"10.1016/j.mssp.2025.110128","url":null,"abstract":"<div><div>In this study, novel Z-scheme AgI@PbBiO₂Br heterojunctions were prepared using a simple in situ precipitation approach to effectively degrade organic pollutants and inactivate gram-negative Escherichia coli (E. coli) and gram-positive Staphylococcus aureus (S. aureus) bacteria when exposed to visible light. The prepared materials were comprehensively evaluated using several analytical procedures. The 20 %-AgI@PbBiO₂Br presented the best photocatalytic performance of all the catalysts prepared. The rhodamine B (RhB) molecules were significantly reduced within 70 min (98.72 %), showing a much higher degradation efficiency than bare AgI (73.58 %) and PbBiO₂Br (46.77 %) under the same conditions. The degradation of methyl orange (MO), neutral red (NR), and tetracycline (TC) by 20 %-AgI@PbBiO₂Br was also examined, resulting in nearly total elimination of MO, NR, and TC pollutants, respectively. In addition, the antibacterial efficacy of 20 %-AgI@PbBiO₂Br against E. coli and S. aureus reaches about 99.99 %. The improved photodegradation efficacy of AgI@PbBiO₂Br is owing to the construction of a heterojunction between AgI and PbBiO₂Br, which increases effective charge separation and visible light absorption, thus enabling the decomposition of pollutants. Cycling experiments confirmed the stability and reusability of the material, demonstrating exceptional photocatalytic durability. The photocatalytic mechanism was thoroughly examined by reactive species capture assays and ESR analysis, confirming that holes and superoxide radicals are crucial in the photodegradation system. Additionally, the density functional theory (DFT) simulations and liquid chromatography-mass spectrometry (LC-MS) helped to clarify the susceptible active sites and possible degradation pathways of RhB. Overall, this work underlines the considerable ability of AgI@PbBiO₂Br heterojunctions to effectively remove persistent pollutants from wastewater.</div></div>","PeriodicalId":18240,"journal":{"name":"Materials Science in Semiconductor Processing","volume":"202 ","pages":"Article 110128"},"PeriodicalIF":4.6,"publicationDate":"2025-10-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145270686","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"First-principles study of ion migration in rare-earth-doped CsPbBr3 halide perovskites","authors":"Yan Yang ,&nbsp;Xiaoli Wei ,&nbsp;Xinghai Zhu ,&nbsp;Bing Yang ,&nbsp;Yi Liu ,&nbsp;Junmin Xia ,&nbsp;Bo Cai ,&nbsp;Shufen Chen","doi":"10.1016/j.mssp.2025.110126","DOIUrl":"10.1016/j.mssp.2025.110126","url":null,"abstract":"<div><div>Halide perovskite materials exhibit great potential for applications in photovoltaics, light-emitting diodes, and other optoelectronic devices due to their exceptional optoelectronic properties. However, their poor stability compared to conventional silicon-based solar cells poses a major obstacle to large-scale commercialization. Among various degradation mechanisms, ion migration is recognized as a key factor affecting long-term operational stability. In this study, we employ first-principles calculations to investigate the effects of B-site rare-earth metal (Nd, Sm, Gd) doping on ion migration in CsPbBr₃. The results show that rare-earth doping induces slight lattice contraction and enhances B-X bonding strength, thereby improving structural robustness. Electronic structure analyses confirm that the doped systems maintain direct bandgap characteristics, with the bandgap slightly increasing from 2.30 eV to 2.35 eV. More importantly, rare-earth doping significantly elevates both the formation energies and migration barriers of halide vacancies, effectively reducing defect mobility. Specifically, the defect formation energy increases by ∼0.10 eV, and the migration barrier rises by over 0.50 eV. This work provides a new strategy for suppressing ion migration in optoelectronic devices and enhancing their stability and reliability, offering significant application value.</div></div>","PeriodicalId":18240,"journal":{"name":"Materials Science in Semiconductor Processing","volume":"202 ","pages":"Article 110126"},"PeriodicalIF":4.6,"publicationDate":"2025-10-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145270683","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Investigation of Hf doping effects on the performance of AlN-based FBAR","authors":"Hong-Wei Wu ,&nbsp;Ze-Wen Sun ,&nbsp;Chieh-Wen Lo ,&nbsp;Sheng-Yuan Chu ,&nbsp;Cheng-Che Tsai","doi":"10.1016/j.mssp.2025.110124","DOIUrl":"10.1016/j.mssp.2025.110124","url":null,"abstract":"<div><div>In this paper, the effects of Hafnium (Hf) doping on the crystal structures and piezoelectric properties of aluminum nitride (AlN) thin films were reported. Aluminum nitride based (Hf_xAl_1-xN) films with different Hf concentrations were deposited on Si (100) substrates by adjusting the RF power to vary the dopant concentration. The optimum doping ratio and process parameters for optimizing the piezoelectric properties of the proposed films were investigated using various material analysis techniques such as X-ray Photoelectron Spectroscopy (XPS), X-ray diffractometer (XRD), Atomic Force Microscope (AFM), and Piezoresponse Force Microscopy (PFM). The results showed that the best properties of the proposed films were obtained with 12.1 at% Hf doping, and the <em>c/a</em> ratio of the material was 1.561, which confirmed the lattice structure transformation from wurtzite to hexagonal structure. The piezoelectric coefficient d₃₃ was 10.34 p.m./V, 220 % higher than the undoped AlN film. The film bulk acoustic resonators (FBARs) using the proposed film were then fabricated. It was found that the electro-mechanical coupling coefficient (<span><math><mrow><msubsup><mi>K</mi><mrow><mi>e</mi><mi>f</mi><mi>f</mi></mrow><mn>2</mn></msubsup></mrow></math></span>) was increased to 10.43 % using 12.1 at% Hf-doped AlN piezoelectric film, which is an abrupt increase of the undoped AlN FBAR (with an electro-mechanical coupling coefficient of 7.1 %). It demonstrates the significant potential of using proposed films for broadband applications.</div></div>","PeriodicalId":18240,"journal":{"name":"Materials Science in Semiconductor Processing","volume":"202 ","pages":"Article 110124"},"PeriodicalIF":4.6,"publicationDate":"2025-10-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145270684","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Corrigendum to “Multi-channel transport with inter-digitated electrode-enabled flexible transparent heater for optical and thermal regulations” [Mater. Sci. Semiconduct. Process. 201 (2026) 110089]","authors":"Junghyun Lee ,&nbsp;Chanhyuk Choi ,&nbsp;Malkeshkumar Patel ,&nbsp;Thanh Tai Nguyen ,&nbsp;Shuvaraj Ghosh ,&nbsp;Seunghee Cho ,&nbsp;Joondong Kim","doi":"10.1016/j.mssp.2025.110114","DOIUrl":"10.1016/j.mssp.2025.110114","url":null,"abstract":"","PeriodicalId":18240,"journal":{"name":"Materials Science in Semiconductor Processing","volume":"201 ","pages":"Article 110114"},"PeriodicalIF":4.6,"publicationDate":"2025-10-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145321359","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Ultrathin metal-organic framework sandwiching strategy for dual-passivation in p-i-n perovskite solar cells","authors":"M.H. Rajabi Manshadi ,&nbsp;A.M. Mozafarbeigi ,&nbsp;S. Gholizadeh ,&nbsp;Z. Shadrokh ,&nbsp;Y. Abdi","doi":"10.1016/j.mssp.2025.110106","DOIUrl":"10.1016/j.mssp.2025.110106","url":null,"abstract":"<div><div>This study explores the effects of both the concentration and structural integration of ultrathin metal–organic framework (MOF) layers that sandwich the perovskite active layer in inverted (p–i–n) perovskite solar cells (PSCs), employing NiO as the hole transport layer (HTL). The introduction of dual MOF interlayers significantly enhances the crystallinity, grain size, and environmental stability of the perovskite film. Devices with the dual-MOF configuration (NiO/MOF/Perovskite/MOF/PCBM/Ag) demonstrated a notable increase in power conversion efficiency (PCE), from 12.06 % (reference: NiO/Perovskite/PCBM/Ag) to 16.11 %. This ∼34 % absolute enhancement is primarily attributed to improved short-circuit current density (Jsc), which increased from 20.06 to 22.44 mA/cm², owing to optimized light harvesting and superior film morphology. Electrochemical impedance spectroscopy (EIS) verified the decrease in charge transfer resistance and improved carrier transport in the dual-MOF devices, with values of 368.33 Ω for the reference device and 206.84 Ω for the dual-MOF device. In addition, dual-MOF devices maintained over 96 % of their initial power conversion efficiency (PCE) after a 30-day period in ambient conditions (25 °C, 45 ± 5 % relative humidity), which is in stark contrast to the significant degradation that was seen in the reference devices. These findings underscore the potential of MOF–perovskite heterostructures for achieving stable, high-performance PSCs.</div></div>","PeriodicalId":18240,"journal":{"name":"Materials Science in Semiconductor Processing","volume":"202 ","pages":"Article 110106"},"PeriodicalIF":4.6,"publicationDate":"2025-10-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145270687","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}