Materials Science in Semiconductor Processing最新文献

{"title":"Study of half metallic ferromagnetism, Curie temperature, and thermoelectric aspects of double perovskite oxides Ba2XMoO6 (X = Cr, Mn, Fe, Co) for spintronic applications","authors":"Q. Mahmood","doi":"10.1016/j.mssp.2025.109519","DOIUrl":"10.1016/j.mssp.2025.109519","url":null,"abstract":"<div><div>Spintronics is a cutting-edge technology that manipulates both the spin and charge of electrons to control the behaviour of multifunctional devices. Here in the current paper, the half-metallic ferromagnetism, electronic properties, and influence of transport parameters on the magnetic behaviour of double perovskite oxides Ba₂XMoO₆ (X = Cr, Mn, Fe, Co) are addressed comprehensively by Wien2k and Boltz Trap codes. The ferromagnetic (FM) state exhibits higher optimized energy compared to antiferromagnetic (AFM) and paramagnetic (PM) states, showing enhanced stability. The negative formation energy (−2.65, −2.62, −2.49, −2.46) eV further confirms the thermodynamic stability of these materials. The spin polarization density and magnetic moments (4.0, 5.0, 4.0, 3.0)μ_B collectively validate the 100 % spin polarization. The Heisenberg model ensures the Curie temperature (340, 331, 325, 313)K at room temperature. The band structures exhibit discrete metallic and insulating characteristics for spin-up and spin-down configurations, thereby consolidating half-metallic ferromagnetism in these materials. The double exchange mechanism, hybridization <em>p-d</em> states, and associated exchange constants influence the exchange splitting energies, which eventually elaborate the function and nature of the spin of electrons that establish ferromagnetism in the studied system. The analysis of the Seebeck coefficient and thermal and electrical conductivities have explained the influence of transport properties on the spin functionality of the electrons. Additionally, the power factor has been reported to assess their thermoelectric performance. The stable structures, above-room temperature ferromagnetism, and ultralow lattice thermal conductivity increase their importance for spintronics.</div></div>","PeriodicalId":18240,"journal":{"name":"Materials Science in Semiconductor Processing","volume":"193 ","pages":"Article 109519"},"PeriodicalIF":4.2,"publicationDate":"2025-03-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143724116","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Synthesis, characterization and catalytic applications of CaO-Cu decorated PANI/SA nanocomposites for wastewater treatment","authors":"Urooj Mariam ,&nbsp;Sarmed Ali ,&nbsp;Saba Jamil ,&nbsp;Asima Saif ,&nbsp;Hifza Arshad ,&nbsp;Tahseen Kamal ,&nbsp;Shaista Liaqat ,&nbsp;Muhammad Jamshed Latif ,&nbsp;Shanza Rauf Khan","doi":"10.1016/j.mssp.2025.109486","DOIUrl":"10.1016/j.mssp.2025.109486","url":null,"abstract":"<div><div>The development of an innovative and efficient catalyst has led to the synthesis of calcium oxide-copper bimetallic nanoparticles (CaO-Cu BNPs) through the chemical reduction of copper nitrate Cu(NO₃)₂ and calcium oxide (CaO) using sodium borohydride (NaBH₄) as a reducing agent. Polyaniline (PANI) and sodium alginate (SA) were incorporated via in-situ oxidative polymerization. Characterization techniques including X-ray Diffraction (XRD), Scanning Electron Microscopy (SEM), Energy Dispersive X-ray (EDX), and Fourier-transform infrared (FTIR) spectroscopy confirmed the structure, morphology and elemental composition identifying Ca, Cu, and O of the BNPs and nanocomposites (NCs). The catalytic performance of the CaO-Cu BNPs and their NCs CaO-Cu/SA, CaO-Cu/PANI, and CaO-Cu/SA/PANI were evaluated for the reduction of methyl red (MR), crystal violet (CV), methyl blue (MB), and eriochrome black T (EBT). CaO-Cu/SA/PANI NC showed superior performance achieving a 97 % reduction of MB in 18 min with an apparent rate constant of 0.2096 min⁻¹ and a half-life of 3 min. The reduction time for organic dyes achieved by CaO- Cu/SA/PANI NC is 18 min for MB, 20 min for EBT, 30 min for MR, and 16 min for CV, and half-life values for these dyes were 3, 4, 5, and 3 min, respectively. These findings highlight the potential of CaO-Cu/SA/PANI as an effective catalyst for dye reduction in wastewater treatment.</div></div>","PeriodicalId":18240,"journal":{"name":"Materials Science in Semiconductor Processing","volume":"193 ","pages":"Article 109486"},"PeriodicalIF":4.2,"publicationDate":"2025-03-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143724117","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Growth, optimization and high-temperature performance of GeO2/Ga2O3 MOSCAPs","authors":"N. Manikanthababu ,&nbsp;Subrata Karmakar ,&nbsp;Ishtiaq Firoz Shiam ,&nbsp;Injamamul Hoque Emu ,&nbsp;Ariful Haque ,&nbsp;Ravi Droopad","doi":"10.1016/j.mssp.2025.109518","DOIUrl":"10.1016/j.mssp.2025.109518","url":null,"abstract":"<div><div>In this study, GeO₂ thin films were grown by pulsed laser deposition (PLD) on β-Ga₂O₃, (<span><math><mrow><mo>−</mo><mn>201</mn></mrow></math></span>) single crystal substrates to fabricate metal-oxide-semiconductor capacitors (MOSCAPs) to investigate their properties using current-voltage (I-V) and capacitance-voltage (C-V) measurements at elevated temperatures. The amorphous nature, an ultrawide bandgap of ∼5.11 eV and the elemental compositions with their corresponding chemical states of the GeO₂ thin films were confirmed by X-ray diffraction (XRD), UV–Vis spectrometery and the x-ray photoelectron spectroscopy (XPS), respectively. The <em>Ge-3d</em> deconvoluted peak at 32.4 eV confirms the elemental bonding in GeO₂, with an additional peak found at 30.9 eV that can be attributed to a small portion of GeO_2-x. The Au/GeO₂/Ga₂O₃ MOSCAPs were fabricated to study its high-temperature performance from room temperature (RT) to 300 °C. The reverse leakage current was increased from 1.19 × 10⁻⁷ A to 3.66 × 10⁻⁴ A (nearly four orders of magnitude) as the temperature rises from RT to 300 °C. Due to the presence of oxygen vacancy in GeO_2-x, the Poole-Frenkel current conduction mechanism was utilized to determine a trap level of 0.8 V (below the conduction band of GeO₂) with an activation energy of 0.55 eV. The C–V measurements also show a significant contribution from defects in the flat-band voltage shift and the changes of the slopes indicates an increase in the oxide and interface-trapped charges. The density of oxide-trapped charges increased from 3.9 × 10¹² cm⁻² to 1.3 × 10¹³ cm⁻², as the temperature reached 300 °C. Similarly, the density of interface-trapped charges increased from 3.4 × 10¹² cm⁻² at RT to 1.1 × 10¹³ cm⁻² at 300 °C. The flat-band voltage shift and density of interface-trapped charges of GeO₂/Ga₂O₃ MOSCAPs exhibit exciting materials characteristics for next-generation high-power and high-temperature electronic devices.</div></div>","PeriodicalId":18240,"journal":{"name":"Materials Science in Semiconductor Processing","volume":"193 ","pages":"Article 109518"},"PeriodicalIF":4.2,"publicationDate":"2025-03-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143724519","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Interface trap density in ITO/Si Schottky junction photodetectors","authors":"Yaming Li ,&nbsp;Dianbo Liu ,&nbsp;Ruixi Liu ,&nbsp;Yunxiao Cui ,&nbsp;Yunfei Liu ,&nbsp;Ziyi Ma ,&nbsp;Yuewen Liu ,&nbsp;Jiaxuan Wang ,&nbsp;Ziqian Li ,&nbsp;Yusen Dong ,&nbsp;Jiaxin Li ,&nbsp;Chenxi Du ,&nbsp;Guihua Liao ,&nbsp;Chong Li","doi":"10.1016/j.mssp.2025.109482","DOIUrl":"10.1016/j.mssp.2025.109482","url":null,"abstract":"<div><div>Interface trapping is a notorious effect that is known to limit the performance of Schottky junction photodetectors. In this paper, the interface traps and mobility mechanism of silicon Schottky junction photodetectors were studied with two different electrode structures, namely, field and Schottky structures. The dark current of the devices mainly originated from the junction area-dependent dark current. The characteristic tunneling energies of the devices with field and Schottky structures were 0.095 and 0.102eV, respectively, and their activation energies were 0.193 and 0.294eV, respectively, which are less than half the band gap of silicon. These values are consistent with the devices displaying a trap-assisted tunneling (TAT) mechanism. An equivalent circuit model of metal–insulator–semiconductor interface traps was constructed. The interface trap densities of the devices with field and Schottky structures were calculated to be 1.37 × 10¹⁰ and 3.96 × 10¹¹/(cm²∙eV), respectively. Thus, the field structure can effectively suppress the current arising from trap-assisted tunneling.</div></div>","PeriodicalId":18240,"journal":{"name":"Materials Science in Semiconductor Processing","volume":"193 ","pages":"Article 109482"},"PeriodicalIF":4.2,"publicationDate":"2025-03-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143724517","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Enhanced wide band spectral photodetection (UV-NIR) and high detectivity investigated in topological p-TlBiSe2/n-ITO heterojunction","authors":"Gyanendra Kumar Maurya ,&nbsp;Sandeep Kumar Verma ,&nbsp;Roshani Singh ,&nbsp;Satendra Kumar ,&nbsp;Vipin Kumar ,&nbsp;Rachana Kumar ,&nbsp;Pramod Kumar","doi":"10.1016/j.mssp.2025.109513","DOIUrl":"10.1016/j.mssp.2025.109513","url":null,"abstract":"<div><div>Heterojunctions comprised of topological insulator material such as TlBiSe₂ have sparked intense study attention due to their diverse and unique characteristics and functionalities. The emergence of topological heterojunction can result in a p-n junction at the interfaces having a strong crucial potential barrier that enhances the photodetection capabilities of topological insulators. This study enlightens the successful fabrication and characterization of a novel heterojunction photodetector based on topological insulator p-TlBiSe₂/n-ITO, demonstrated remarkable photodetection abilities across a wide spectral range from ultraviolet (UV) to near-infrared (NIR). The unique topological properties of TlBiSe₂, combined with the excellent conductivity of ITO, contribute to enhanced responsivity and detectivity. Detailed analysis revealed high photodetection performance, with strong spectral responsivity, external quantum efficiency, and fast response time in detecting wavelengths ranging from 200 nm to 1000 nm, The high value of responsivity 1357 A/W and impressive detectivity value of <span><math><mrow><mn>2.89</mn><mo>×</mo><msup><mn>10</mn><mn>12</mn></msup></mrow></math></span> Jones makes this heterojunction highly suitable for applications requiring broad-spectrum detection. These findings highlight the potential of p-TlBiSe₂/n-ITO heterojunctions for next-generation photodetectors in UV and NIR applications, offering a promising platform for future optoelectronic devices.</div></div>","PeriodicalId":18240,"journal":{"name":"Materials Science in Semiconductor Processing","volume":"193 ","pages":"Article 109513"},"PeriodicalIF":4.2,"publicationDate":"2025-03-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143705003","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"High resistive switching current ratio, excellent endurance and stability for bistable non-volatile memristor and photosensing devices based on perovskite/titanium dioxide embedded in polyvinyl alcohol matrix","authors":"Garima Poply ,&nbsp;Manisha ,&nbsp;Deepak Kumar ,&nbsp;Tanmoy Majumder ,&nbsp;Tanuj Kumar ,&nbsp;Vishal Singh ,&nbsp;Jugal Bori ,&nbsp;Jehova Jire L. Hmar","doi":"10.1016/j.mssp.2025.109511","DOIUrl":"10.1016/j.mssp.2025.109511","url":null,"abstract":"&lt;div&gt;&lt;div&gt;This study demonstrates the excellent endurance and stability of a high resistive switching current ratio for bistable non-volatile memristor and photosensing of a fabricated CH&lt;sub&gt;3&lt;/sub&gt;NH&lt;sub&gt;3&lt;/sub&gt;PbBr&lt;sub&gt;3&lt;/sub&gt;-TiO&lt;sub&gt;2&lt;/sub&gt;/PVA/FTO-coated glass substrate. Structural, optical, and electrical properties of fabricated devices TiO&lt;sub&gt;2&lt;/sub&gt;/PVA/FTO-coated glass substrate (D1), CH&lt;sub&gt;3&lt;/sub&gt;NH&lt;sub&gt;3&lt;/sub&gt;PbBr&lt;sub&gt;3&lt;/sub&gt;/PVA/FTO-coated glass substrate (D2), and CH&lt;sub&gt;3&lt;/sub&gt;NH&lt;sub&gt;3&lt;/sub&gt;PbBr&lt;sub&gt;3&lt;/sub&gt;-TiO&lt;sub&gt;2&lt;/sub&gt;/PVA/FTO-coated glass substrate (D3) were examined in detail. The current-voltage (&lt;em&gt;I-V&lt;/em&gt;) characteristic of device D3 shows the bistable non-volatile resistive switching memory having an ON/OFF current ratio of ∼10&lt;sup&gt;7&lt;/sup&gt; for over 5000 sweeping cycles. Device D3 exhibited a significantly higher ON/OFF current ratio compared to devices D1 and D2. Additionally, its operating voltage was substantially lower than that of the control samples D1 and D2, making it highly suitable for low-power electronic applications. Moreover, the stability and retention measurements were performed for device D3 in terms of resistance; the ON/OFF resistance ratio was found to be ∼10&lt;sup&gt;7&lt;/sup&gt; at a read voltage of 1V. The device D3 maintained excellent stability even after continuous operation for ∼10&lt;sup&gt;5&lt;/sup&gt; s, with no significant signs of degradation. Hence, the device D3 has good endurance, stability, and a high resistive switching current ratio, which is suitable for rewriteable non-volatile memristors. Furthermore, the photocurrent, photo-detectivity, and photoresponsivity of the same devices D1, D2, and D3 were studied under broadband light illumination with an intensity of 100 mW/cm&lt;sup&gt;2&lt;/sup&gt;. Interestingly, it has been observed that the three devices show a good response of photocurrent at different voltages. The device D3 exhibited superior performance compared to D1 and D2. The values of current density under dark and light of device D3 are found to be ∼1.98 × 10&lt;sup&gt;−8&lt;/sup&gt; A/cm&lt;sup&gt;2&lt;/sup&gt; and ∼2.53 × 10&lt;sup&gt;−5&lt;/sup&gt; A/cm&lt;sup&gt;2&lt;/sup&gt;, respectively, with the corresponding ON/OFF current ratio as ∼1277. This is due to the combination of perovskite CH&lt;sub&gt;3&lt;/sub&gt;NH&lt;sub&gt;3&lt;/sub&gt;PbBr&lt;sub&gt;3&lt;/sub&gt; and TiO&lt;sub&gt;2&lt;/sub&gt; and enhanced electron-hole pair generation, resulting in increasing the concentration of the charge carrier. The responsivity and photodetectivity of devices exhibit a similar trend as photocurrent. The maximum values of responsivity and photodetectivity of device D3 have been obtained at 1V and found to be ∼2.52 × 10&lt;sup&gt;−2&lt;/sup&gt; A/W and ∼3.15 × 10&lt;sup&gt;11&lt;/sup&gt; Hz&lt;sup&gt;1/2&lt;/sup&gt;/W, respectively. Therefore, this device D3 also has the potential to be used for photosensing devices. Hence, the fabricated device D3 has excellent endurance, stability, high resistive switching current ratio, and photoresponse, which makes it an outstanding candidate for non-volatile memristor and photosensing applicatio","PeriodicalId":18240,"journal":{"name":"Materials Science in Semiconductor Processing","volume":"193 ","pages":"Article 109511"},"PeriodicalIF":4.2,"publicationDate":"2025-03-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143705002","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Photocatalytic reduction of Cr(VI) by novel shuttle-like Bi2S3 nanocrystals under visible light","authors":"Zhenning Yang ,&nbsp;Xiuyue Jin ,&nbsp;Hua Lu ,&nbsp;Shuzhi Tong,&nbsp;Jue Chen,&nbsp;Meng Deng,&nbsp;Fei Chen","doi":"10.1016/j.mssp.2025.109510","DOIUrl":"10.1016/j.mssp.2025.109510","url":null,"abstract":"<div><div>Heavy metal contamination in industrial wastewater poses a significant threat to the environment and public health. To address this issue, various nanocrystalline materials have emerged as promising photocatalysts for water treatment. In this research, by using ultra-high molecular weight of polyvinylpyrrolidone (PVP), a novel shuttle-like Bi₂S₃ nanocrystal was synthesized via a facile hydrothermal method. The material exhibited outstanding performance in water treatment, particularly in the photocatalytic reduction of Cr(VI) to Cr(III) under visible light. The photocatalytic performance of high concentration Cr(VI) (10 mg/L) reduction efficiency with shuttle-like Bi₂S₃ can reach near 100 % in only 5 min (k = 1.4754 min⁻¹). In-situ oxidants capture experiments confirmed ∙O²⁻ was the main active species in the reduction of Cr(VI). This study highlights a cost-effective and scalable approach to fabricating Bi₂S₃ nanocrystals, offering significant potential for morphology control of nanomaterials and industrial water treatment applications for heavy metal remediation.</div></div>","PeriodicalId":18240,"journal":{"name":"Materials Science in Semiconductor Processing","volume":"193 ","pages":"Article 109510"},"PeriodicalIF":4.2,"publicationDate":"2025-03-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143724515","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Recent advancement in ScAlN/GaN high electron mobility transistors: Materials, properties, and device performance","authors":"P. Murugapandiyan ,&nbsp;S. Maheswari ,&nbsp;A.S. Augustine Fletcher ,&nbsp;G. Saranya ,&nbsp;P. Anandan","doi":"10.1016/j.mssp.2025.109509","DOIUrl":"10.1016/j.mssp.2025.109509","url":null,"abstract":"<div><div>This comprehensive review examines the significant advancements in Scandium Aluminum Nitride/Gallium Nitride (ScAlN/GaN) High Electron Mobility Transistors (HEMTs). The incorporation of scandium in conventional AlN barriers has revolutionized III-nitride device technology through enhanced polarization effects and superior electrical properties. We analyze the evolution of material growth techniques, device architectures, and performance metrics, demonstrating remarkable improvements in device characteristics. The review encompasses detailed comparisons with emerging technologies, and substrate alternatives. Through analysis of material parameters, growth conditions, and device physics, we provide insights into the fundamental mechanisms enabling these performance enhancements. Recent developments in barrier layer optimization and novel gate architectures have significantly improved performance.</div></div>","PeriodicalId":18240,"journal":{"name":"Materials Science in Semiconductor Processing","volume":"193 ","pages":"Article 109509"},"PeriodicalIF":4.2,"publicationDate":"2025-03-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143696909","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Effect and mechanism of thiourea on indium electrocrystallization in sulfate electrolyte","authors":"Zeyu Wang ,&nbsp;Xun Wang ,&nbsp;Bo Li ,&nbsp;Yonggang Wei ,&nbsp;Hua Wang","doi":"10.1016/j.mssp.2025.109493","DOIUrl":"10.1016/j.mssp.2025.109493","url":null,"abstract":"<div><div>In the realm of advanced technologies, indium is a critical metal with wide-ranging applications, and the efficient purification of indium has emerged as a topic of significant industrial interest. This study investigates the use of gelatin and thiourea as additives to mitigate the adverse effects of dendrite growth during indium electrolysis. Additionally, agitation was incorporated into the electrolysis process to further enhance the morphology of cathodic indium deposition. Under optimal conditions of 0.5 g/L gelatin and 0.05 g/L thiourea, current efficiency increased by 6.2 %, while the recovery improved by 5.7 %. Scanning electron microscopy (SEM) was employed to examine the dendritic growth of indium on titanium electrodes. The findings indicated that the combination of gelatin, thiourea, and stirring led to a more compact and uniform coating. The electrodeposition mechanisms of indium in various electrolytic environments were further elucidated through cyclic voltammetry and chronoamperometry, revealing that under the influence of gelatin and thiourea, the nucleation process on titanium shifted to a continuous mode.</div></div>","PeriodicalId":18240,"journal":{"name":"Materials Science in Semiconductor Processing","volume":"193 ","pages":"Article 109493"},"PeriodicalIF":4.2,"publicationDate":"2025-03-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143696798","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Effect of co-doping on performance of solution-processed InLiAlO thin film transistors","authors":"Weixin Cheng ,&nbsp;Honglong Ning ,&nbsp;Han Li ,&nbsp;Xiaoqin Wei ,&nbsp;Zeneng Deng ,&nbsp;Zhihao Liang ,&nbsp;Xiao Fu ,&nbsp;Rui Zhou ,&nbsp;Rihui Yao ,&nbsp;Junbiao Peng","doi":"10.1016/j.mssp.2025.109508","DOIUrl":"10.1016/j.mssp.2025.109508","url":null,"abstract":"<div><div>Indium oxide thin film transistors have a moderate bandgap, high carrier concentration, and mobility, enabling their use in high currents. But they may be hard to turn off and have high leakage current, threshold voltage, and power consumption. These can be solved by co-doping, which can control the defects and quality of the films. In this study, InLiAlO thin films and TFTs with Li:Al ratios of 1:0, 2:1, 1:1, 1:2, and 0:1 (Li + Al = 10 at%) were prepared using spin-coating. It is found that both dopants significantly reduced defects and oxygen vacancies, and increased compactness. Moreover, with the increase of Al addition, the crystallization was inhibited. Therefore, the corresponding device performance should be improved. The undoped device had moderate mobility, low <em>I</em>_on/<em>I</em>_off, and high subthreshold swing (SS). The TFT doped with 10 at% Li exhibited higher mobility and lower SS, while the one with 10 at% Al doping showed decreased mobility, and improved <em>I</em>_on/<em>I</em>_off and SS. It is inferred that lithium doping promoted the transformation of hydroxides to oxides, forming more oxides and reducing hydroxide-related defects, but may generate oxygen vacancies. The aluminum doping suppressed the formation of oxygen vacancies and inhibited crystallization. After optimization, Li:Al = 2:1 is the best doping ratio, featuring a saturation mobility of 5.30 cm² V⁻¹·s⁻¹, a current on/off ratio of 7.48 × 10⁵, and a sub-threshold swing of 0.25 V/decade. The corresponding films have high smoothness and density, indicating high quality and fewer internal voids. It is suggested that co-doping is a promising strategy for improving the performance of indium oxide-based TFTs.</div></div>","PeriodicalId":18240,"journal":{"name":"Materials Science in Semiconductor Processing","volume":"193 ","pages":"Article 109508"},"PeriodicalIF":4.2,"publicationDate":"2025-03-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143696908","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}