Materials Science in Semiconductor Processing最新文献

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Construction of ZnIn2S4-Au-CdS heterostructure for boosting photothermal-assisted photocatalytic hydrogen production ZnIn2S4-Au-CdS异质结构的构建促进光热辅助光催化制氢
IF 4.6 3区 工程技术
Materials Science in Semiconductor Processing Pub Date : 2025-10-12 DOI: 10.1016/j.mssp.2025.110138
Xiaohua Zhao , Xiaoxiao Liu , Xiang Liu , Xueping Zhang , Shuang Wang , Shiyi Yang , Xing Chen
{"title":"Construction of ZnIn2S4-Au-CdS heterostructure for boosting photothermal-assisted photocatalytic hydrogen production","authors":"Xiaohua Zhao ,&nbsp;Xiaoxiao Liu ,&nbsp;Xiang Liu ,&nbsp;Xueping Zhang ,&nbsp;Shuang Wang ,&nbsp;Shiyi Yang ,&nbsp;Xing Chen","doi":"10.1016/j.mssp.2025.110138","DOIUrl":"10.1016/j.mssp.2025.110138","url":null,"abstract":"<div><div>Photocatalytic hydrogen (H<sub>2</sub>) evolution via water splitting offers an environmentally friendly and sustainable approach for converting solar energy into clean fuel. In this study, we constructed an efficient ternary ZnIn<sub>2</sub>S<sub>4</sub>-Au-CdS (ZIS-Au-CdS) photocatalyst by decorating flower-like ZIS microspheres with Au nanoparticles (NPs) and CdS, significantly enhancing visible-light absorption and utilization. The optimized ZIS-Au-CdS composite achieves remarkable H<sub>2</sub> evolution rates of 8.02 mmol g<sup>−1</sup> h<sup>−1</sup> under visible light and 11.90 mmol g<sup>−1</sup> h<sup>−1</sup> under full-spectrum irradiation, representing 11.47- and 7.93-fold enhancements over pure ZIS under the same conditions. The well-matched band structures of ZIS and CdS facilitate the establishment of an internal electric field (IEF) at the heterojunction interfaces, which not only broadens the visible-light absorption range but also significantly promotes the separation of photogenerated charge carriers. In addition, Au NPs function as effective electron mediators at the interface, accelerating charge transfer between ZIS and CdS and further suppressing charge recombination. The photothermal effect from Au NPs also raises the local reaction temperature, contributing to photothermal-assisted photocatalytic H<sub>2</sub> evolution. As a result, the ZIS-Au-CdS photocatalyst demonstrates superior photocatalytic H<sub>2</sub> evolution performance under both visible and full-spectrum irradiation.</div></div>","PeriodicalId":18240,"journal":{"name":"Materials Science in Semiconductor Processing","volume":"202 ","pages":"Article 110138"},"PeriodicalIF":4.6,"publicationDate":"2025-10-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145322202","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Phosphorus doped 2D polymeric graphitic carbon nitride biomaterial: Biological activity and DFT insights with nitrofuran drug interactions 磷掺杂二维聚合物石墨氮化碳生物材料:生物活性和与硝基呋喃药物相互作用的DFT见解
IF 4.6 3区 工程技术
Materials Science in Semiconductor Processing Pub Date : 2025-10-11 DOI: 10.1016/j.mssp.2025.110117
G. Kausalya Sasikumar , A. Anitha , M. Sivanandam , P. Ponmurugan , R.R. Shenthilkumar
{"title":"Phosphorus doped 2D polymeric graphitic carbon nitride biomaterial: Biological activity and DFT insights with nitrofuran drug interactions","authors":"G. Kausalya Sasikumar ,&nbsp;A. Anitha ,&nbsp;M. Sivanandam ,&nbsp;P. Ponmurugan ,&nbsp;R.R. Shenthilkumar","doi":"10.1016/j.mssp.2025.110117","DOIUrl":"10.1016/j.mssp.2025.110117","url":null,"abstract":"<div><div>Heteroatom-doped graphitic carbon nitride (P-g-CN) has gained immense attention owing to its superior electronic and structural properties which make it suitable for biological applications. In this study, we developed phosphorous-doped graphitic carbon nitride (P-g-CN NBs) using facile thermal polymerization techniques and utilized them for potential biological activity and Density Functional Theory (DFT) studies. The as-synthesized materials were characterized and tested for their anticancer, anti-inflammatory, and antioxidant activities. The anti-cancer activity of P-g-CN NBs exhibited lower cytotoxicity and higher cell viability than undoped g-CN in HeLa cells using the MTT assay. Anti-inflammatory activity was assessed in protein denaturation inhibition studies of Bovine Serum Albumin (BSA), whereas antioxidant activity was assessed using DPPH, ABTS, Superoxide (SO), and phosphomolybdenum (PM) assays. The P-g-CN NBs exhibited excellent radical scavenging activity in DHPH and low IC<sub>50</sub> (minimum inhibitory concentration) values (56 ± 0.45 μg/mL) when compared to the IC<sub>50</sub> values of g-CN (60 ± 0.12 μg/mL). SO radical scavenging activity revealed that P-g-CN NBs exhibited superior efficiency with an IC<sub>50</sub> of 51 ± 0.14 μg/mL, compared to g-CN (IC<sub>50</sub>: 60 ± 0.34 μg/mL), and was nearly equivalent to that of reference compound ascorbic acid (IC<sub>50</sub>: 49 ± 0.22 μg/mL). In addition, DFT studies were conducted to understand the interactions between P-g-CN NBs and nitrofuran at the molecular level. We modelled their binding interactions with four nitrofuran compounds: Furaltadone (FTD), Furazolidone (FZD), Nitrofurantoin (NFT), and Nitrofurazone (NFZ). These findings suggest that P-g-CN NBs is safe and effective in biological and environmental applications. This study combined experimental and computational studies to highlight the versatility of P-g-CN NBs.</div></div>","PeriodicalId":18240,"journal":{"name":"Materials Science in Semiconductor Processing","volume":"202 ","pages":"Article 110117"},"PeriodicalIF":4.6,"publicationDate":"2025-10-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145270680","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Pd/PdO-Decorated NiAl-LDHs-Derived NiO/Al2O3 nanosheets for high-temperature H2 detection Pd/ do修饰nial - ldhs衍生NiO/Al2O3纳米片用于高温H2检测
IF 4.6 3区 工程技术
Materials Science in Semiconductor Processing Pub Date : 2025-10-10 DOI: 10.1016/j.mssp.2025.110130
Qinghua Dong , Junjun Sun , Huijun Li , Cong Qin , Yan Wang , Jianliang Cao
{"title":"Pd/PdO-Decorated NiAl-LDHs-Derived NiO/Al2O3 nanosheets for high-temperature H2 detection","authors":"Qinghua Dong ,&nbsp;Junjun Sun ,&nbsp;Huijun Li ,&nbsp;Cong Qin ,&nbsp;Yan Wang ,&nbsp;Jianliang Cao","doi":"10.1016/j.mssp.2025.110130","DOIUrl":"10.1016/j.mssp.2025.110130","url":null,"abstract":"<div><div>Developing hydrogen (H<sub>2</sub>) sensors that combine high sensitivity with rapid response/recovery kinetics presents a notable challenge in ensuring the safe use of this clean energy carrier. To address this, Pd/PdO nanoparticles were decorated onto NiO/Al<sub>2</sub>O<sub>3</sub> composites derived from NiAl layered double hydroxides (LDHs) via hydrothermal synthesis followed by calcination. Characterization revealed that the optimal 2.0 wt% Pd/PdO-NiO/Al<sub>2</sub>O<sub>3</sub> sample showcases a high concentration of oxygen vacancies, a large specific surface area (149.73 m<sup>2</sup>/g), and abundant porosity. Gas sensing evaluation demonstrated that this material exhibits a significantly enhanced response (2.921) to 100 ppm H<sub>2</sub> at an operating temperature of 350 °C. Crucially, it achieves remarkably fast response and recovery times of 14 and 19 s, respectively. Furthermore, the sensor demonstrates excellent selectivity and long-term stability. This work presents a promising strategy based on Schottky junction engineering within LDH-derived composites for realizing ultrafast and sensitive H<sub>2</sub> detection.</div></div>","PeriodicalId":18240,"journal":{"name":"Materials Science in Semiconductor Processing","volume":"202 ","pages":"Article 110130"},"PeriodicalIF":4.6,"publicationDate":"2025-10-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145270678","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Characteristics of Si channel layer formed through recrystallization using nanosecond laser annealing for monolithic 3D integration 单片三维集成纳秒激光退火再结晶硅通道层的特性
IF 4.6 3区 工程技术
Materials Science in Semiconductor Processing Pub Date : 2025-10-10 DOI: 10.1016/j.mssp.2025.110121
Hyerin Shin , Dongmin Yoon , Chunghee Jo , Kiseok Lee , Hoonjung Oh , Dae-Hong Ko
{"title":"Characteristics of Si channel layer formed through recrystallization using nanosecond laser annealing for monolithic 3D integration","authors":"Hyerin Shin ,&nbsp;Dongmin Yoon ,&nbsp;Chunghee Jo ,&nbsp;Kiseok Lee ,&nbsp;Hoonjung Oh ,&nbsp;Dae-Hong Ko","doi":"10.1016/j.mssp.2025.110121","DOIUrl":"10.1016/j.mssp.2025.110121","url":null,"abstract":"<div><div>Monolithic 3-dimensional integration (M3D) is a promising solution to overcome the limitations of 2-dimensional device scaling. A key challenge in fabricating M3D is the formation of the upper silicon (Si) channel layer under a low thermal budget process. The most viable approach is recrystallizing the amorphous Si layer formed on the dielectric layer using the UV-pulsed laser annealing, due to its short annealing time and high absorption coefficient of amorphous Si. In this research, we aimed to form a continuous single-crystalline Si layer by developing recrystallization process using laser anneal. Notably, we introduced single- and multi-pulse annealing with varying energy densities. Microstructural analysis confirmed that at 700 mJ/cm<sup>2</sup> and 800 mJ/cm<sup>2</sup>, the epitaxial seed fully melted and recrystallized without collapse of SiO<sub>2</sub> walls. In single-pulse annealing, lateral regrowth resulted in boundary traps and the formation of large grains. In comparison, multi-pulse annealing significantly reduced grain boundary defects and (111) stacking faults by promoting repeated recrystallization along the (100) direction. GI-XRD results further revealed that the Si (400) peak became significantly more dominant than in single-pulse annealing. The recrystallized Si layer through multi-pulse annealing exhibited a single-crystalline structure, aligned in the same (100) orientation as the bottom Si layer, with reduced residual defects.</div></div>","PeriodicalId":18240,"journal":{"name":"Materials Science in Semiconductor Processing","volume":"202 ","pages":"Article 110121"},"PeriodicalIF":4.6,"publicationDate":"2025-10-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145270677","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Capacitive-coupled non-pinched I–V and type II memristive behavior of carbon-TiO2 nanocomposite films fabricated through aerosol flame synthesis 气溶胶火焰合成碳- tio2纳米复合膜的电容耦合非挤压型I-V和II型记忆电阻行为
IF 4.6 3区 工程技术
Materials Science in Semiconductor Processing Pub Date : 2025-10-09 DOI: 10.1016/j.mssp.2025.110125
Abdul Khalique , Gianluigi De Falco , Patrizia Minutolo , Mario Commodo , Andrea D'Anna
{"title":"Capacitive-coupled non-pinched I–V and type II memristive behavior of carbon-TiO2 nanocomposite films fabricated through aerosol flame synthesis","authors":"Abdul Khalique ,&nbsp;Gianluigi De Falco ,&nbsp;Patrizia Minutolo ,&nbsp;Mario Commodo ,&nbsp;Andrea D'Anna","doi":"10.1016/j.mssp.2025.110125","DOIUrl":"10.1016/j.mssp.2025.110125","url":null,"abstract":"<div><div>Titanium dioxide (TiO<sub>2</sub>) is a long-established semiconductor material used in several electrical and electronical applications, including random-access memories, biohybrid interfaces, sensors, and neuromorphic computing. Nevertheless, such applications are still at an early development stage, constrained by fundamental gaps in understanding and technological limitations. Functional memristive characteristics of TiO<sub>2</sub> rely extensively on the processes, including synthesis techniques, fabrication, and physicochemical modifications. In this work, nanostructured composite films of Carbon (Soot) and TiO<sub>2</sub> are fabricated through a custom-made aerosol flame synthesis (AFS) reactor using a facile one-step synthesis technique with good control over nanostructure, crystallinity, defect chemistry and carbon component inclusions. Scanning mobility particle sizer (SMPS) was employed to analyze particle size distribution in the flame. Microstructures and composition of the C-TiO<sub>2</sub> film were characterized through Raman spectroscopy, UV–VIS spectrophotometry, atomic force microscopy (AFM), and current-voltage I-V measurements. The presence of carbon and TiO<sub>2</sub> across the film was confirmed by the Raman spectrum and quantified by light absorption. The electrical characterization demonstrated a capacitive-coupled non-zero crossing and type-II hysteresis behavior of the C-TiO<sub>2</sub> nanostructured film. Following carbon compositing, TiO<sub>2</sub> exhibited enhanced optical absorption in the visible spectral region and electrical conductivity. The improvement in the conduction pathways was evidenced by the I-V measurements of the TiO<sub>2</sub> film and the C-TiO<sub>2</sub> film. A phenomenon of disappearance and reappearance of the capacitive-coupled memresistive effect was observed after dark and sunlight exposure, most likely due to the photosensitive nature of TiO<sub>2</sub> in the nanocomposite film. This proof-of-concept study testifies that, due to such properties, C-TiO<sub>2</sub> nanocomposite films produced via AFS can be considered as promising future candidates for applications in the field of next-generation electronic devices.</div></div>","PeriodicalId":18240,"journal":{"name":"Materials Science in Semiconductor Processing","volume":"202 ","pages":"Article 110125"},"PeriodicalIF":4.6,"publicationDate":"2025-10-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145270685","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Novel Z-scheme AgI@PbBiO2Br heterojunction for efficient photodegradation of organic pollutants and bacteria inactivation: DFT simulation, explore active radicals, and mechanism insight 新型Z-scheme AgI@PbBiO2Br异质结高效光降解有机污染物和细菌灭活:DFT模拟,探索活性自由基,并深入了解机制
IF 4.6 3区 工程技术
Materials Science in Semiconductor Processing Pub Date : 2025-10-08 DOI: 10.1016/j.mssp.2025.110128
Ahsan Nazir , Ameena Tur Rasool , Chuntao Chen , Otabek Mukhitdinov , Doniyor Jumanazarov , Dongping Sun
{"title":"Novel Z-scheme AgI@PbBiO2Br heterojunction for efficient photodegradation of organic pollutants and bacteria inactivation: DFT simulation, explore active radicals, and mechanism insight","authors":"Ahsan Nazir ,&nbsp;Ameena Tur Rasool ,&nbsp;Chuntao Chen ,&nbsp;Otabek Mukhitdinov ,&nbsp;Doniyor Jumanazarov ,&nbsp;Dongping Sun","doi":"10.1016/j.mssp.2025.110128","DOIUrl":"10.1016/j.mssp.2025.110128","url":null,"abstract":"<div><div>In this study, novel Z-scheme AgI@PbBiO<sub>2</sub>Br heterojunctions were prepared using a simple in situ precipitation approach to effectively degrade organic pollutants and inactivate gram-negative Escherichia coli (E. coli) and gram-positive Staphylococcus aureus (S. aureus) bacteria when exposed to visible light. The prepared materials were comprehensively evaluated using several analytical procedures. The 20 %-AgI@PbBiO<sub>2</sub>Br presented the best photocatalytic performance of all the catalysts prepared. The rhodamine B (RhB) molecules were significantly reduced within 70 min (98.72 %), showing a much higher degradation efficiency than bare AgI (73.58 %) and PbBiO<sub>2</sub>Br (46.77 %) under the same conditions. The degradation of methyl orange (MO), neutral red (NR), and tetracycline (TC) by 20 %-AgI@PbBiO<sub>2</sub>Br was also examined, resulting in nearly total elimination of MO, NR, and TC pollutants, respectively. In addition, the antibacterial efficacy of 20 %-AgI@PbBiO<sub>2</sub>Br against E. coli and S. aureus reaches about 99.99 %. The improved photodegradation efficacy of AgI@PbBiO<sub>2</sub>Br is owing to the construction of a heterojunction between AgI and PbBiO<sub>2</sub>Br, which increases effective charge separation and visible light absorption, thus enabling the decomposition of pollutants. Cycling experiments confirmed the stability and reusability of the material, demonstrating exceptional photocatalytic durability. The photocatalytic mechanism was thoroughly examined by reactive species capture assays and ESR analysis, confirming that holes and superoxide radicals are crucial in the photodegradation system. Additionally, the density functional theory (DFT) simulations and liquid chromatography-mass spectrometry (LC-MS) helped to clarify the susceptible active sites and possible degradation pathways of RhB. Overall, this work underlines the considerable ability of AgI@PbBiO<sub>2</sub>Br heterojunctions to effectively remove persistent pollutants from wastewater.</div></div>","PeriodicalId":18240,"journal":{"name":"Materials Science in Semiconductor Processing","volume":"202 ","pages":"Article 110128"},"PeriodicalIF":4.6,"publicationDate":"2025-10-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145270686","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
First-principles study of ion migration in rare-earth-doped CsPbBr3 halide perovskites 稀土掺杂CsPbBr3卤化物钙钛矿中离子迁移的第一性原理研究
IF 4.6 3区 工程技术
Materials Science in Semiconductor Processing Pub Date : 2025-10-08 DOI: 10.1016/j.mssp.2025.110126
Yan Yang , Xiaoli Wei , Xinghai Zhu , Bing Yang , Yi Liu , Junmin Xia , Bo Cai , Shufen Chen
{"title":"First-principles study of ion migration in rare-earth-doped CsPbBr3 halide perovskites","authors":"Yan Yang ,&nbsp;Xiaoli Wei ,&nbsp;Xinghai Zhu ,&nbsp;Bing Yang ,&nbsp;Yi Liu ,&nbsp;Junmin Xia ,&nbsp;Bo Cai ,&nbsp;Shufen Chen","doi":"10.1016/j.mssp.2025.110126","DOIUrl":"10.1016/j.mssp.2025.110126","url":null,"abstract":"<div><div>Halide perovskite materials exhibit great potential for applications in photovoltaics, light-emitting diodes, and other optoelectronic devices due to their exceptional optoelectronic properties. However, their poor stability compared to conventional silicon-based solar cells poses a major obstacle to large-scale commercialization. Among various degradation mechanisms, ion migration is recognized as a key factor affecting long-term operational stability. In this study, we employ first-principles calculations to investigate the effects of B-site rare-earth metal (Nd, Sm, Gd) doping on ion migration in CsPbBr<sub>3</sub>. The results show that rare-earth doping induces slight lattice contraction and enhances B-X bonding strength, thereby improving structural robustness. Electronic structure analyses confirm that the doped systems maintain direct bandgap characteristics, with the bandgap slightly increasing from 2.30 eV to 2.35 eV. More importantly, rare-earth doping significantly elevates both the formation energies and migration barriers of halide vacancies, effectively reducing defect mobility. Specifically, the defect formation energy increases by ∼0.10 eV, and the migration barrier rises by over 0.50 eV. This work provides a new strategy for suppressing ion migration in optoelectronic devices and enhancing their stability and reliability, offering significant application value.</div></div>","PeriodicalId":18240,"journal":{"name":"Materials Science in Semiconductor Processing","volume":"202 ","pages":"Article 110126"},"PeriodicalIF":4.6,"publicationDate":"2025-10-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145270683","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Investigation of Hf doping effects on the performance of AlN-based FBAR Hf掺杂对aln基FBAR性能影响的研究
IF 4.6 3区 工程技术
Materials Science in Semiconductor Processing Pub Date : 2025-10-08 DOI: 10.1016/j.mssp.2025.110124
Hong-Wei Wu , Ze-Wen Sun , Chieh-Wen Lo , Sheng-Yuan Chu , Cheng-Che Tsai
{"title":"Investigation of Hf doping effects on the performance of AlN-based FBAR","authors":"Hong-Wei Wu ,&nbsp;Ze-Wen Sun ,&nbsp;Chieh-Wen Lo ,&nbsp;Sheng-Yuan Chu ,&nbsp;Cheng-Che Tsai","doi":"10.1016/j.mssp.2025.110124","DOIUrl":"10.1016/j.mssp.2025.110124","url":null,"abstract":"<div><div>In this paper, the effects of Hafnium (Hf) doping on the crystal structures and piezoelectric properties of aluminum nitride (AlN) thin films were reported. Aluminum nitride based (Hf<sub>x</sub>Al<sub>1-x</sub>N) films with different Hf concentrations were deposited on Si (100) substrates by adjusting the RF power to vary the dopant concentration. The optimum doping ratio and process parameters for optimizing the piezoelectric properties of the proposed films were investigated using various material analysis techniques such as X-ray Photoelectron Spectroscopy (XPS), X-ray diffractometer (XRD), Atomic Force Microscope (AFM), and Piezoresponse Force Microscopy (PFM). The results showed that the best properties of the proposed films were obtained with 12.1 at% Hf doping, and the <em>c/a</em> ratio of the material was 1.561, which confirmed the lattice structure transformation from wurtzite to hexagonal structure. The piezoelectric coefficient d<sub>33</sub> was 10.34 p.m./V, 220 % higher than the undoped AlN film. The film bulk acoustic resonators (FBARs) using the proposed film were then fabricated. It was found that the electro-mechanical coupling coefficient (<span><math><mrow><msubsup><mi>K</mi><mrow><mi>e</mi><mi>f</mi><mi>f</mi></mrow><mn>2</mn></msubsup></mrow></math></span>) was increased to 10.43 % using 12.1 at% Hf-doped AlN piezoelectric film, which is an abrupt increase of the undoped AlN FBAR (with an electro-mechanical coupling coefficient of 7.1 %). It demonstrates the significant potential of using proposed films for broadband applications.</div></div>","PeriodicalId":18240,"journal":{"name":"Materials Science in Semiconductor Processing","volume":"202 ","pages":"Article 110124"},"PeriodicalIF":4.6,"publicationDate":"2025-10-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145270684","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Corrigendum to “Multi-channel transport with inter-digitated electrode-enabled flexible transparent heater for optical and thermal regulations” [Mater. Sci. Semiconduct. Process. 201 (2026) 110089] “用于光学和热调节的带有数字化电极的柔性透明加热器的多通道传输”的勘误表[Mater.]科学。半导体和。Process. 201 (2026) 110089]
IF 4.6 3区 工程技术
Materials Science in Semiconductor Processing Pub Date : 2025-10-08 DOI: 10.1016/j.mssp.2025.110114
Junghyun Lee , Chanhyuk Choi , Malkeshkumar Patel , Thanh Tai Nguyen , Shuvaraj Ghosh , Seunghee Cho , Joondong Kim
{"title":"Corrigendum to “Multi-channel transport with inter-digitated electrode-enabled flexible transparent heater for optical and thermal regulations” [Mater. Sci. Semiconduct. Process. 201 (2026) 110089]","authors":"Junghyun Lee ,&nbsp;Chanhyuk Choi ,&nbsp;Malkeshkumar Patel ,&nbsp;Thanh Tai Nguyen ,&nbsp;Shuvaraj Ghosh ,&nbsp;Seunghee Cho ,&nbsp;Joondong Kim","doi":"10.1016/j.mssp.2025.110114","DOIUrl":"10.1016/j.mssp.2025.110114","url":null,"abstract":"","PeriodicalId":18240,"journal":{"name":"Materials Science in Semiconductor Processing","volume":"201 ","pages":"Article 110114"},"PeriodicalIF":4.6,"publicationDate":"2025-10-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145321359","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Ultrathin metal-organic framework sandwiching strategy for dual-passivation in p-i-n perovskite solar cells p-i-n钙钛矿太阳能电池双钝化的超薄金属有机骨架夹层策略
IF 4.6 3区 工程技术
Materials Science in Semiconductor Processing Pub Date : 2025-10-06 DOI: 10.1016/j.mssp.2025.110106
M.H. Rajabi Manshadi , A.M. Mozafarbeigi , S. Gholizadeh , Z. Shadrokh , Y. Abdi
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