Materials Science in Semiconductor Processing最新文献_第3页

Enhanced photocatalytic hydrogen production on Au/TiO2-CeO2 through the formation of oxygen vacancies 通过形成氧空位增强Au/TiO2-CeO2光催化制氢

IF 4.2 3区工程技术

Materials Science in Semiconductor Processing Pub Date : 2025-05-24 DOI: 10.1016/j.mssp.2025.109703

Alejandro Gutiérrez-Sánchez , David Ramírez-Ortega , Benjamín Portales , Rodolfo Zanella

{"title":"Enhanced photocatalytic hydrogen production on Au/TiO2-CeO2 through the formation of oxygen vacancies","authors":"Alejandro Gutiérrez-Sánchez , David Ramírez-Ortega , Benjamín Portales , Rodolfo Zanella","doi":"10.1016/j.mssp.2025.109703","DOIUrl":"10.1016/j.mssp.2025.109703","url":null,"abstract":"<div><div>TiO<sub>2</sub>-CeO<sub>2</sub> (TC) materials superficially modified with Au nanoparticles (AuNPs) were prepared using the sequential deposition-precipitation with urea method. EDS revealed the effective deposition of Ce and Au and a well-distributed CeO<sub>2</sub> phase on TiO<sub>2</sub>. STEM-HAADF showed proximity between the TiO<sub>2</sub> and CeO<sub>2</sub> phases and the formation of AuNPs with a size of 3.6 ± 0.7 nm. The TiO<sub>2</sub> band gap (E<sub>g</sub>) decreased slightly with the increase in the CeO<sub>2</sub> concentration. For the TC materials, XPS confirmed a slight increase in the Ti<sup>3+</sup> concentration and the predominant presence of Ce<sup>3+</sup>, which increased the oxygen vacancies (OVs).</div><div>Furthermore, the AuNPs were mainly composed of Au<sup>0</sup> (80.2 %). XPS and photoelectrochemical characterizations revealed higher valence band-edge energy after the CeO<sub>2</sub> and AuNP incorporation, making proton reduction in the material more thermodynamically favorable. As for the hydrogen evolution reaction, the TC material with optimal Ce loading of 0.9 wt% increased the photocatalytic hydrogen production rate to 2.3 mmol g<sup>−1</sup> h<sup>−1</sup>, 20 % higher than that of pristine TiO<sub>2</sub>. Additionally, adding 0.7 wt% of AuNPs led to a substantial improvement in hydrogen photocatalytic production, reaching 10.7 mmol g<sup>−1</sup> h<sup>−1</sup>. This enhancement was ascribed to the ability of AuNPs to act as electron traps, reducing the electron-hole recombination. Photoelectrochemical characterization showed a decrease in the flat-band potential upon incorporation of CeO<sub>2</sub> and AuNPs, which could also be associated with the formation of OVs. AuNPs on the surface improved the stability of the electrons in the CB through the formation of a Schottky junction.</div></div>","PeriodicalId":18240,"journal":{"name":"Materials Science in Semiconductor Processing","volume":"197 ","pages":"Article 109703"},"PeriodicalIF":4.2,"publicationDate":"2025-05-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144124787","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Enhanced light emission characteristic of an InP-waveguided planar InGaAs Gunn diode inp波导平面InGaAs Gunn二极管的增强发光特性

IF 4.2 3区工程技术

Materials Science in Semiconductor Processing Pub Date : 2025-05-24 DOI: 10.1016/j.mssp.2025.109713

G. Kalyon , F. Sarcan , S. Mutlu , I. Perkitel , I. Demir , A. Erol

{"title":"Enhanced light emission characteristic of an InP-waveguided planar InGaAs Gunn diode","authors":"G. Kalyon , F. Sarcan , S. Mutlu , I. Perkitel , I. Demir , A. Erol","doi":"10.1016/j.mssp.2025.109713","DOIUrl":"10.1016/j.mssp.2025.109713","url":null,"abstract":"<div><div>We present a Gunn light-emitting diode based on n-type In<sub>0.53</sub>Ga<sub>0.47</sub>As, operating at approximately 1620 nm with enhanced emission properties achieved by integrating an InP waveguide structure, under pulsed operation at room temperature. The device comprises of a 5000 nm thick n-type In<sub>0.53</sub>Ga<sub>0.47</sub>As epilayer grown on a semi-insulating InP substrate <em>via</em> Metal Organic Vapor Phase Epitaxy. Gunn oscillations, with a period of approximately 0.2 ns, are observed at an electric field of approximately 2.85 kV/cm. The onset of light emission at a wavelength of around 1620 nm coincides with the Negative Differential Resistance threshold on the current-voltage curve, and the emission intensity markedly increases as applied electric field Increases. The integration of an InP-based optical waveguide significantly improves the emission characteristics of the device. Although the threshold electric field for NDR and light emission remains constant, the emission intensity increases sixfold compared to a reference device without a waveguide, which is consistent with the simulation results. These findings reveal the potential of InP waveguide integration in improving the performance of In<sub>0.53</sub>Ga<sub>0.47</sub>As- based pulsed near-infrared light-emitting Gunn devices.</div></div>","PeriodicalId":18240,"journal":{"name":"Materials Science in Semiconductor Processing","volume":"197 ","pages":"Article 109713"},"PeriodicalIF":4.2,"publicationDate":"2025-05-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144124785","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Mimicking synaptic plasticity based on TiO2/MgO film resistive switching device 基于TiO2/MgO薄膜电阻开关器件的突触可塑性模拟

IF 4.2 3区工程技术

Materials Science in Semiconductor Processing Pub Date : 2025-05-24 DOI: 10.1016/j.mssp.2025.109695

Jinyan Pan , Jing Li , Ruotong He , Qiao Huang , Tiejun Li , Lingsen Yan , Yan Liu , Hongyang He , Yunlong Gao

{"title":"Mimicking synaptic plasticity based on TiO2/MgO film resistive switching device","authors":"Jinyan Pan , Jing Li , Ruotong He , Qiao Huang , Tiejun Li , Lingsen Yan , Yan Liu , Hongyang He , Yunlong Gao","doi":"10.1016/j.mssp.2025.109695","DOIUrl":"10.1016/j.mssp.2025.109695","url":null,"abstract":"<div><div>The TiO<sub>2</sub>/MgO composite film was prepared via atomic layer deposition, exhibiting superior resistive switching (RS) performance compared to pure MgO film, including a higher resistance ratio (R<sub>off</sub>/R<sub>on</sub>) and enhanced retention. The Ag/TiO<sub>2</sub>/MgO/ITO device exhibited gradual RS characteristics, making it suitable for neuromorphic applications. The device also displayed excellent multilevel RS properties analogous to synaptic plasticity. When a series of positive or negative scanning voltages with progressively increasing amplitudes were applied, the resistance of the device switched and remained at correspondingly higher or lower states, effectively mimicking synaptic potentiation or depression in an amplitude-dependent manner. Furthermore, long-term potentiation and depression behaviors were observed under the time-dependent stimulation. As the pulse voltage amplitude increased, fewer pulses were required to set the device to a specific state. Conversely, lower voltage necessitated more pulses to facilitate Ag ions migration and conductive filament formation. This dynamic mimics synaptic weight modulation, where the evaluation of filaments over time corresponds to synaptic adjustment. Therefore, applying higher or lower amplitude voltages for longer or shorter durations aligns with the observation, where varying stimuli to the presynaptic membrane modulate synaptic weight, thereby strengthening (and weakening) the synaptic signal. The pulse amplitude and duration thresholds modulate the RS behavior of the composite TiO<sub>2</sub>/MgO film effectively mimic the learning and forgetting processes of human brain memory.</div></div>","PeriodicalId":18240,"journal":{"name":"Materials Science in Semiconductor Processing","volume":"197 ","pages":"Article 109695"},"PeriodicalIF":4.2,"publicationDate":"2025-05-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144124786","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Fabrication of conical pits via nanoindentation-induced electrochemical etching 纳米压痕诱导电化学刻蚀制备锥形凹坑

IF 4.2 3区工程技术

Materials Science in Semiconductor Processing Pub Date : 2025-05-23 DOI: 10.1016/j.mssp.2025.109682

Wang He, Tingting Chen, Xuancheng Zhu, Yanlin Jiang, Jianliang Wang, Linmao Qian, Bingjun Yu

{"title":"Fabrication of conical pits via nanoindentation-induced electrochemical etching","authors":"Wang He, Tingting Chen, Xuancheng Zhu, Yanlin Jiang, Jianliang Wang, Linmao Qian, Bingjun Yu","doi":"10.1016/j.mssp.2025.109682","DOIUrl":"10.1016/j.mssp.2025.109682","url":null,"abstract":"<div><div>Conical micro-pits are of significant importance in a wide range of advanced applications, including space exploration, surveillance systems, biomedical engineering, earth science research, defense technologies, and material processing. However, the fabrication methods of conical micro-pits still need to be further investigated to meet the increasing demand for advanced optics. Nanoindentation combined with electrochemical etching demonstrates powerful ability in micro-pits manufacturing; however, the underlying mechanisms of this method remain unclear, which hinders further development of the fabrication for micro-pits. This study develops a controllable fabrication strategy for conical micro-pits via synergistic nanoindentation and electrochemical etching. Key findings reveal that nanoindentation-induced crystal damage zones act as preferential initiation sites for electrochemical etching, enabling precise control of micro-pit dimensions by tuning mechanical parameters (normal load, cycle number) and electrochemical conditions (voltage, time). This method achieves independent regulation of conical pit diameter and depth, overcoming the limitations of conventional single-mechanism methods. Integrated with PDMS nanoimprinting, the process enables high-fidelity and rapid replication of conical pist arrays on polymer surfaces.</div></div>","PeriodicalId":18240,"journal":{"name":"Materials Science in Semiconductor Processing","volume":"197 ","pages":"Article 109682"},"PeriodicalIF":4.2,"publicationDate":"2025-05-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144116831","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Boosting visible light-triggered transformation of nitrobenzene into aniline utilizing mesoporous S-scheme MnCo2O4/BaTiO3 heterojunction 利用介孔s型MnCo2O4/BaTiO3异质结促进可见光触发硝基苯转化为苯胺

IF 4.2 3区工程技术

Materials Science in Semiconductor Processing Pub Date : 2025-05-23 DOI: 10.1016/j.mssp.2025.109706

Amal S. Basaleh , Fatehy M. Abdel-Haleem , Reda M. Mohamed , Tamer M. Khedr

{"title":"Boosting visible light-triggered transformation of nitrobenzene into aniline utilizing mesoporous S-scheme MnCo2O4/BaTiO3 heterojunction","authors":"Amal S. Basaleh , Fatehy M. Abdel-Haleem , Reda M. Mohamed , Tamer M. Khedr","doi":"10.1016/j.mssp.2025.109706","DOIUrl":"10.1016/j.mssp.2025.109706","url":null,"abstract":"<div><div>The photocatalytic transforming of cancer-causing nitrobenzene (NTb) into high-value aniline (ANL) is valuable for the economy and a promising way to conserve public health and the ecology. The methodical advancement of exceptional visible-light-driven photocatalytic heterostructure materials that efficiently utilize the solar spectrum is essential. This study involved the growth of mesoporous perovskite barium titanate (BTT) nanocrystals using mixed-surfactant-mediated solvothermal methodology. Next, metal cobaltate (MCT) nanoparticles (NPs) (3–12 wt%) were mixed with BTT using sonication and calcination to manufacture mesoporous step-scheme (S-scheme) MCT/BTT heterojunction photocatalysts. A comprehensive characterization validated the creation of robust interconnection between MCT and BTT with efficient charge migration following the S-type pathway. Indeed, MCT NPs had synergistic effects, significantly improving photosensitivity and photo-formed carriers' disunion and migration in the fabricated heterojunctions. These distinguished attributes, along with the mesoporous 2D nature of the synthesized heterojunctions, which offer plentiful active charges and reactive sites, resulted in a considerable boost for photocatalytic transformation (PCT) of NTb. Particularly, NTb molecules were completely transformed into ANL within 50 min of visible illumination, utilizing the best heterostructure material (9 % MCT/BTT) at the optimal concentration (2.4 g/L). This illustrious heterostructure displayed superb stability during five reaction recycles and enhanced reaction kinetics (K = 0.0749 min<sup>−1</sup>), outperforming by 46.8 times that yielded by employing pure BTT. The present work provides substantial thinking on the creation of exceeding performance and photocatalytically stable photocatalytic materials.</div></div>","PeriodicalId":18240,"journal":{"name":"Materials Science in Semiconductor Processing","volume":"197 ","pages":"Article 109706"},"PeriodicalIF":4.2,"publicationDate":"2025-05-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144116716","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Impact of incomplete ionization in presence of interface traps in p-i-n TFET and n-p-n double gate TFET p-i-n和n-p-n双栅TFET中界面阱存在时不完全电离的影响

IF 4.2 3区工程技术

Materials Science in Semiconductor Processing Pub Date : 2025-05-22 DOI: 10.1016/j.mssp.2025.109664

Deepjyoti Deb, Ratul Kr Baruah, Rupam Goswami

{"title":"Impact of incomplete ionization in presence of interface traps in p-i-n TFET and n-p-n double gate TFET","authors":"Deepjyoti Deb, Ratul Kr Baruah, Rupam Goswami","doi":"10.1016/j.mssp.2025.109664","DOIUrl":"10.1016/j.mssp.2025.109664","url":null,"abstract":"<div><div>This study investigates the impact of incomplete ionization and interface traps on the performance of <em>p-i-n</em> SOI Tunnel Field-Effect Transistors (TFETs) and <em>n-p-n</em> SOI double-gate TFETs, known for their low subthreshold swing and potential for low-power applications, are sensitive to both incomplete ionization of dopants and defects at the semiconductor-oxide interface. This research examines the interaction of these two phenomena and their influence on device sensitivity, focusing on single level and Gaussian trap distributions. Through comprehensive simulations using the Sentaurus TCAD tool, the study evaluates the effects of different trap distributions and doping levels on TFET performance. Results reveal that Gaussian traps exhibit higher sensitivity compared to single level traps, and incomplete ionization is more significant under negative gate-source voltages, leading to a reduction in available carriers. Additionally, temperature variations alter the sensitivity peaks of the devices, indicating that thermal effects influence the behaviour of both traps and incomplete ionization. The findings demonstrate that incomplete ionization and interface traps significantly affect TFET performance, with Gaussian traps posing a greater challenge due to their broader energy distribution. The study provides valuable insights for optimizing TFET designs by accounting for these non-idealities, which can improve device reliability and performance in practical applications. In conclusion, the research contributes to the understanding of incomplete ionization in the presence of interface traps and its implications for TFETs, offering guidance for the development of more efficient and reliable transistor designs.</div></div>","PeriodicalId":18240,"journal":{"name":"Materials Science in Semiconductor Processing","volume":"197 ","pages":"Article 109664"},"PeriodicalIF":4.2,"publicationDate":"2025-05-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144107136","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

First-principles prediction of ferromagnetism and Curie temperature for transition metals doped single walled (6,0) SiC nanotubes: Materials for application in spintronics 过渡金属掺杂单壁（6,0）SiC纳米管的铁磁性和居里温度第一性原理预测：自旋电子学应用材料

IF 4.2 3区工程技术

Materials Science in Semiconductor Processing Pub Date : 2025-05-22 DOI: 10.1016/j.mssp.2025.109702

Sevda Rzayeva , Vusala Nabi Jafarova , Debarati Dey Roy

{"title":"First-principles prediction of ferromagnetism and Curie temperature for transition metals doped single walled (6,0) SiC nanotubes: Materials for application in spintronics","authors":"Sevda Rzayeva , Vusala Nabi Jafarova , Debarati Dey Roy","doi":"10.1016/j.mssp.2025.109702","DOIUrl":"10.1016/j.mssp.2025.109702","url":null,"abstract":"<div><div>The electronic and magnetic characteristics of TM-doped single-walled SiC nanotubes were studied using Density Functional Theory and the local spin density approximation. From <em>ab initio</em> simulations, bandgap for undoped SiC nanotube and SiC:V systems which are obtained 0.98 eV, and 0.6 (spin-up); 1.4 eV (spin-down), respectively. After doped with 3d transition metals, the SiC nanotube systems induce a magnetic response and the total magnetizations of the quantum confined single walled SiC:Co and SiC:V systems are ∼1.9 μ<sub>B</sub> and 1.0 μ<sub>B</sub>, respectively. The results of total energy calculations predicted that the ferromagnetic and antiferromagnetic phases are stable for V<sub>x</sub>Si<sub>1-x</sub>C and Co<sub>x</sub>Si<sub>1-x</sub>C. The obtained values of formation energies show the stability of V<sub>x</sub>Si<sub>1-x</sub>C and Co<sub>x</sub>Si<sub>1-x</sub>C systems. Our results predicted that V<sub>x</sub>Si<sub>1-x</sub>C have semi-metallic behavior with Curie temperature is nearly above to 300 K and it suitable for spin-based applications in future material informatics research field. Co<sub>x</sub>Si<sub>1-x</sub>C shows metallic behavior, and it is the better choice for optoelectronics devices with a Curie temperature less than room temperature.</div></div>","PeriodicalId":18240,"journal":{"name":"Materials Science in Semiconductor Processing","volume":"197 ","pages":"Article 109702"},"PeriodicalIF":4.2,"publicationDate":"2025-05-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144107137","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Approach to reducing oversaturated boron content in plate poly layer of DRAM 降低DRAM平板多聚层中过饱和硼含量的方法

IF 4.2 3区工程技术

Materials Science in Semiconductor Processing Pub Date : 2025-05-22 DOI: 10.1016/j.mssp.2025.109652

Dong-Sik Park , Joonsuk Park , Ha-Na Cho , Hyeon-Woo Jang , Su-Ho Shin , Byoungdeog Choi

引用次数: 0

Wafer bow control of extended wavelength InGaAs photodetector materials by strain tailoring 应变裁剪法控制扩展波长InGaAs光电探测器材料的晶圆弯曲

IF 4.2 3区工程技术

Materials Science in Semiconductor Processing Pub Date : 2025-05-22 DOI: 10.1016/j.mssp.2025.109698

Bowen Liu , Yi Gu , Lihao Yin , Huijuan Huang , Kang Li , Liuyan Fan , Hong Zhou , Pingping Chen , Chunlei Yu , Tao Li , Xiumei Shao , Xue Li , Haimei Gong

{"title":"Wafer bow control of extended wavelength InGaAs photodetector materials by strain tailoring","authors":"Bowen Liu , Yi Gu , Lihao Yin , Huijuan Huang , Kang Li , Liuyan Fan , Hong Zhou , Pingping Chen , Chunlei Yu , Tao Li , Xiumei Shao , Xue Li , Haimei Gong","doi":"10.1016/j.mssp.2025.109698","DOIUrl":"10.1016/j.mssp.2025.109698","url":null,"abstract":"<div><div>The wafer bow caused by lattice mismatch between metamorphic InGaAs epitaxial layer and InP substrate has become one of the key factors limiting the large-scale development of extended wavelength InGaAs focal plane array photodetectors. By introducing tensile strain in InAlAs buffer layers and InAlAs cap layer to compensate the compressive strain caused by lattice mismatch, the wafer bow was decreased from 55.9 μm to 22.2 μm. The influence of strain compensation structure on the anisotropy of metamorphic InGaAs materials was investigated by stress distribution, surface morphology, and PL uniformity. XRD and PL characterizations indicate that small tensile strain in InAlAs buffer layers did not reduce the quality of metamorphic InGaAs epitaxial material. This study shows that strain compensation is an effective method to control wafer bow and decrease anisotropy of metamorphic InGaAs materials grown on InP substrate.</div></div>","PeriodicalId":18240,"journal":{"name":"Materials Science in Semiconductor Processing","volume":"197 ","pages":"Article 109698"},"PeriodicalIF":4.2,"publicationDate":"2025-05-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144107207","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Iron gallate-modified silk fibroin microspheres with nanostructured layer for effective antibacterial properties 具有纳米结构层的没食子酸铁修饰丝素微球具有有效的抗菌性能

IF 4.2 3区工程技术

Materials Science in Semiconductor Processing Pub Date : 2025-05-22 DOI: 10.1016/j.mssp.2025.109689

Wang Sun , Mengting Yin , Zhongyi Sun , Haibo Liu , Jing Ru , Feng Chen , Haijian Ni , Xinyu Zhao

{"title":"Iron gallate-modified silk fibroin microspheres with nanostructured layer for effective antibacterial properties","authors":"Wang Sun , Mengting Yin , Zhongyi Sun , Haibo Liu , Jing Ru , Feng Chen , Haijian Ni , Xinyu Zhao","doi":"10.1016/j.mssp.2025.109689","DOIUrl":"10.1016/j.mssp.2025.109689","url":null,"abstract":"<div><div>The lack of antibacterial ability in tissue repair materials can lead to repair failure in clinical practice, especially in cases of infection. In this article, an <em>in situ</em> surface modification strategy has been proposed to endow useful biomaterials with excellent antibacterial performance by engineering the surface coordination interaction between iron ions and polyphenols. Through the controlled fabrication of a nanostructured iron gallate (GFe) composite layer on biocompatible silk fibroin microspheres (SFMSs), this study develops an antibiotic-free antimicrobial platform that enables reactive oxygen species (ROS)-mediated bactericidal activity while maintaining the native cell-migration-promoting characteristics of silk fibroin (SF). The resulting biodegradable biomaterial system presents a novel therapeutic strategy for tissue regeneration in infection-prone microenvironments. As a proof-of-concept, silk fibroin microspheres (SFMSs) are selected as the biomaterial matrix and gallic acid (GA) is chosen as the metal ligand materials. The SFMSs are synthesized using a polyvinyl alcohol (PVA) induced β folding method followed by the controlled growth of a layer of the iron gallate nanoparticles (GFe NPs) on its surface, resulting in the formation of GFe NPs modified silk fibroin microspheres (GFe@SFMSs). By harnessing the bacteria-adhesive properties of SF and the reactive oxygen species (ROS) generation catalyzed by Fe<sup>3+</sup>, GFe@SFMSs are capable of efficiently capturing and eliminating bacteria on their surface. The <em>in vitro</em> bacterial studies have demonstrated that GFe@SFMSs exhibit robust antibacterial activity against both Gram-positive and Gram-negative bacteria. The surface coordination engineering strategy between iron ions and polyphenols presents novel prospects for clinical antibacterial application.</div></div>","PeriodicalId":18240,"journal":{"name":"Materials Science in Semiconductor Processing","volume":"197 ","pages":"Article 109689"},"PeriodicalIF":4.2,"publicationDate":"2025-05-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144107176","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0