Materials Science in Semiconductor Processing最新文献_第4页

Iron gallate-modified silk fibroin microspheres with nanostructured layer for effective antibacterial properties 具有纳米结构层的没食子酸铁修饰丝素微球具有有效的抗菌性能

IF 4.2 3区工程技术

Materials Science in Semiconductor Processing Pub Date : 2025-05-22 DOI: 10.1016/j.mssp.2025.109689

Wang Sun , Mengting Yin , Zhongyi Sun , Haibo Liu , Jing Ru , Feng Chen , Haijian Ni , Xinyu Zhao

{"title":"Iron gallate-modified silk fibroin microspheres with nanostructured layer for effective antibacterial properties","authors":"Wang Sun , Mengting Yin , Zhongyi Sun , Haibo Liu , Jing Ru , Feng Chen , Haijian Ni , Xinyu Zhao","doi":"10.1016/j.mssp.2025.109689","DOIUrl":"10.1016/j.mssp.2025.109689","url":null,"abstract":"<div><div>The lack of antibacterial ability in tissue repair materials can lead to repair failure in clinical practice, especially in cases of infection. In this article, an <em>in situ</em> surface modification strategy has been proposed to endow useful biomaterials with excellent antibacterial performance by engineering the surface coordination interaction between iron ions and polyphenols. Through the controlled fabrication of a nanostructured iron gallate (GFe) composite layer on biocompatible silk fibroin microspheres (SFMSs), this study develops an antibiotic-free antimicrobial platform that enables reactive oxygen species (ROS)-mediated bactericidal activity while maintaining the native cell-migration-promoting characteristics of silk fibroin (SF). The resulting biodegradable biomaterial system presents a novel therapeutic strategy for tissue regeneration in infection-prone microenvironments. As a proof-of-concept, silk fibroin microspheres (SFMSs) are selected as the biomaterial matrix and gallic acid (GA) is chosen as the metal ligand materials. The SFMSs are synthesized using a polyvinyl alcohol (PVA) induced β folding method followed by the controlled growth of a layer of the iron gallate nanoparticles (GFe NPs) on its surface, resulting in the formation of GFe NPs modified silk fibroin microspheres (GFe@SFMSs). By harnessing the bacteria-adhesive properties of SF and the reactive oxygen species (ROS) generation catalyzed by Fe<sup>3+</sup>, GFe@SFMSs are capable of efficiently capturing and eliminating bacteria on their surface. The <em>in vitro</em> bacterial studies have demonstrated that GFe@SFMSs exhibit robust antibacterial activity against both Gram-positive and Gram-negative bacteria. The surface coordination engineering strategy between iron ions and polyphenols presents novel prospects for clinical antibacterial application.</div></div>","PeriodicalId":18240,"journal":{"name":"Materials Science in Semiconductor Processing","volume":"197 ","pages":"Article 109689"},"PeriodicalIF":4.2,"publicationDate":"2025-05-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144107176","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Rare-earth decorated hollow B-TiO2: Oxygen vacancy-mediated visible-light photocatalysis for antibiotic degradation and hydrogen production 稀土修饰的空心B-TiO2：氧空位介导的可见光催化抗生素降解和制氢

IF 4.2 3区工程技术

Materials Science in Semiconductor Processing Pub Date : 2025-05-21 DOI: 10.1016/j.mssp.2025.109691

Yanzi Wang , Jianan Dai , Jing Ma , Tengyue Zhang , Zili Liang , Liangsheng Qiang , Shu-Hao Chang

{"title":"Rare-earth decorated hollow B-TiO2: Oxygen vacancy-mediated visible-light photocatalysis for antibiotic degradation and hydrogen production","authors":"Yanzi Wang , Jianan Dai , Jing Ma , Tengyue Zhang , Zili Liang , Liangsheng Qiang , Shu-Hao Chang","doi":"10.1016/j.mssp.2025.109691","DOIUrl":"10.1016/j.mssp.2025.109691","url":null,"abstract":"<div><div>Enhancing the properties of titanium dioxide (TiO<sub>2</sub>) through modification with rare earth metals has become a significant area of research. This study focuses on synthesizing a hollow core-shell nanostructured RE-B-TiO<sub>2</sub> (RE: Nd, Sm, Eu, Er, Tm) catalyst using solvothermal technology and evaluating their visible-light catalytic efficiency in degrading tetracycline hydrochloride (TCH) and generating H<sub>2</sub>. Findings indicate that rare earth element doping enhances oxygen vacancies, minimizes electron-hole recombination, improves electron transfer rates in hollow TiO<sub>2</sub> structures, and broadens light absorption from ultraviolet to visible ranges. Under visible light, the Er-B-TiO<sub>2</sub> catalyst achieved a 93.2 % TCH degradation rate after 120 min. Upon further examination of the effects of catalyst dosage, initial pH, various anions, TCH concentration, and different antibiotics, it was found that pH levels and specific anions significantly impacted the photocatalytic degradation of TCH. By introducing oxygen vacancies in RE-B-TiO<sub>2</sub>, a strong visible-light absorption band is formed, enhancing photochemical oxidation. Density Functional Theory (DFT) calculations and HPLC-MS analyses helped outline the photodegradation pathway and mechanism, while the Toxicity predictions indicated a progressive reduction in toxicity during TCH degradation. The enhanced photocatalytic performance is attributed to a slight band gap reduction resulting from the RE 4f-level introduction, offering a promising strategy for designing high-performance photocatalysts.</div></div>","PeriodicalId":18240,"journal":{"name":"Materials Science in Semiconductor Processing","volume":"197 ","pages":"Article 109691"},"PeriodicalIF":4.2,"publicationDate":"2025-05-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144107135","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Modulating localized surface plasmon resonance through metal composition and nanoparticle Shape: Implications for solar cell applications 通过金属成分和纳米颗粒形状调制局部表面等离子体共振：对太阳能电池应用的影响

IF 4.2 3区工程技术

Materials Science in Semiconductor Processing Pub Date : 2025-05-20 DOI: 10.1016/j.mssp.2025.109677

Hyeokjin Yoon , Suhyun Kim , Hyun-Young Kim

{"title":"Modulating localized surface plasmon resonance through metal composition and nanoparticle Shape: Implications for solar cell applications","authors":"Hyeokjin Yoon , Suhyun Kim , Hyun-Young Kim","doi":"10.1016/j.mssp.2025.109677","DOIUrl":"10.1016/j.mssp.2025.109677","url":null,"abstract":"<div><div>Localized Surface Plasmon Resonance (LSPR) is an important optical effect that arises when conductive nanoparticles interact with incoming light. This interaction causes the conduction electrons on the surface of the nanoparticles to oscillate collectively, which in turn generates enhanced electromagnetic fields in their vicinity. In this study, we synthesized three distinct types of plasmonic nanoparticles (P-NPs): Ag sphere, Ag plate, and Au sphere. These nanoparticles exhibited unique LSPR characteristics that were influenced by their shape and composition. All synthesized P-NPs were incorporated into dye-sensitized solar cells (DSSCs) to evaluate their influence on device efficiency through LSPR characteristics. Devices utilizing Ag plates at a concentration of 0.4 wt% demonstrated optimal performance, achieving a short-circuit current density (<em>J</em><sub>SC</sub>) of 18.5 mA/cm<sup>2</sup>, an open-circuit voltage (<em>V</em><sub>oc</sub>) of 0.79 V, and a power conversion efficiency (PCE) of 10.2 %. In comparison, systems employing Au spheres at 0.5 wt% and Ag spheres at 0.7 wt% exhibited comparatively lower PCEs of 9.81 % and 9.1 %, respectively. Finally, Raman spectroscopy was employed to confirm the LSPR effect induced by P-NPs.</div></div>","PeriodicalId":18240,"journal":{"name":"Materials Science in Semiconductor Processing","volume":"197 ","pages":"Article 109677"},"PeriodicalIF":4.2,"publicationDate":"2025-05-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144089573","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

LPCVD grown n-type doped β-Ga2O3 films on c-plane sapphire using TEOS precursor 用TEOS前驱体在c面蓝宝石表面生长n型掺杂β-Ga2O3薄膜

IF 4.2 3区工程技术

Materials Science in Semiconductor Processing Pub Date : 2025-05-20 DOI: 10.1016/j.mssp.2025.109697

Modassir Anwer, Amit Verma

{"title":"LPCVD grown n-type doped β-Ga2O3 films on c-plane sapphire using TEOS precursor","authors":"Modassir Anwer, Amit Verma","doi":"10.1016/j.mssp.2025.109697","DOIUrl":"10.1016/j.mssp.2025.109697","url":null,"abstract":"<div><div>β-Gallium Oxide (β-Ga<sub>2</sub>O<sub>3</sub>) is recognized as an ultrawide bandgap semiconductor material having large bandgap energy E<sub>g</sub> = 4.4–4.9 eV. In addition to the high critical electric field of ∼7–8 MV/cm, it has an advantage of accessibility of melt-grown bulk substrates with large area. High-quality thin epitaxial films with precise carrier concentration control are pre-requisite to fabricate high-performance β-Ga<sub>2</sub>O<sub>3</sub> devices. While n-type doping of β-Ga<sub>2</sub>O<sub>3</sub> in LPCVD has been carried out with SiCl<sub>4</sub> precursor and solid Ge, there are no reports of Si doping using organometallic dopant precursors such as Tetra-ethyl orthosilicate (TEOS) in LPCVD. In this study, we demonstrate controlled n-type doping of Ga<sub>2</sub>O<sub>3</sub> heteroepitaxial films on c-plane sapphire using TEOS precursor as a source of Si dopant in an LPCVD system. By increasing the Ar flow through TEOS bubbler from 0.5 sccm to 10 sccm, resistance decrease of ∼6 orders is observed. Hall measurements conducted at room temperature reveal the carrier concentration increases from 5.14x10<sup>17</sup>– 4.65x10<sup>19</sup> cm<sup>−3</sup> as TEOS flow increases from 3 to 10 sccm, while an increase in mobility is observed from ∼2 cm<sup>2</sup>/V.s to ∼7 cm<sup>2</sup>/V.s before decreasing slightly at higher TEOS flow rates. Raman and XRD spectrum confirm the β-phase of Ga<sub>2</sub>O<sub>3</sub> with (−201) orientation. Transmittance analysis showed an optical energy bandgap of 4.88 eV with no TEOS flow which gradually decreases to 4.75 eV as TEOS flow rate is increased to 10 sccm with a corresponding increase in the Urbach energy.</div></div>","PeriodicalId":18240,"journal":{"name":"Materials Science in Semiconductor Processing","volume":"197 ","pages":"Article 109697"},"PeriodicalIF":4.2,"publicationDate":"2025-05-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144107208","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Double-passivated MAPbBr3 nanocrystals with nitrogen-doped graphene quantum dots and polyvinylidene fluoride for white light LEDs 含氮掺杂石墨烯量子点和聚偏氟乙烯的双钝化MAPbBr3纳米晶体用于白光led

IF 4.2 3区工程技术

Materials Science in Semiconductor Processing Pub Date : 2025-05-20 DOI: 10.1016/j.mssp.2025.109700

Yi Zhu , Feng Tong , Zheng Chen , Zijun Huang , Sheng Huang , Xiuquan Gu

{"title":"Double-passivated MAPbBr3 nanocrystals with nitrogen-doped graphene quantum dots and polyvinylidene fluoride for white light LEDs","authors":"Yi Zhu , Feng Tong , Zheng Chen , Zijun Huang , Sheng Huang , Xiuquan Gu","doi":"10.1016/j.mssp.2025.109700","DOIUrl":"10.1016/j.mssp.2025.109700","url":null,"abstract":"<div><div>This study addresses the challenge of synthesizing highly emissive and stable MAPbBr<sub>3</sub> nanocrystals (NCs) for practical device applications. A double-passivation approach was developed through using nitrogen-doped graphene quantum dots (NGQDs) and polyvinylidene fluoride (PVDF) during the <em>in-situ</em> synthesis of MAPbBr<sub>3</sub> NCs. By optimizing the amount of NGQDs, the resulting MAPbBr<sub>3</sub>/PVDF/NGQDs composite films exhibited green emission at 522 nm with a narrow spectral width of 17.7 nm. The films demonstrated exceptional stability, retaining 60 % of their initial photoluminescence (PL) intensity after 144 h of water immersion and 96 % of their initial intensity after 10 min of heating at 100 °C. This stability is attributed to the NGQDs reducing defects and acting as nitrogen-enhanced sites that promote consistent crystal formation. Additionally, the composite film was used to fabricate a white light-emitting diode (WLED) with a color gamut coverage rate of 125 % under the National Television Standards Committee (NTSC) standard and 93.8 % under the Rec.2020 standard. This work might present a synergistic strategy combining <em>in-situ</em> defect passivation with encapsulation, offering a viable solution to the stability-efficiency trade-off in perovskite NCs and advancing high-color-gamut flexible displays.</div></div>","PeriodicalId":18240,"journal":{"name":"Materials Science in Semiconductor Processing","volume":"197 ","pages":"Article 109700"},"PeriodicalIF":4.2,"publicationDate":"2025-05-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144107134","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Nitrogen doping of polycrystalline, LPCVD 3C-SiC thin films using alternating supply deposition 用交变电源沉积法制备多晶、LPCVD 3C-SiC薄膜

IF 4.2 3区工程技术

Materials Science in Semiconductor Processing Pub Date : 2025-05-20 DOI: 10.1016/j.mssp.2025.109663

Philipp Moll, Georg Pfusterschmied, Markus Leitgeb, Ulrich Schmid

{"title":"Nitrogen doping of polycrystalline, LPCVD 3C-SiC thin films using alternating supply deposition","authors":"Philipp Moll, Georg Pfusterschmied, Markus Leitgeb, Ulrich Schmid","doi":"10.1016/j.mssp.2025.109663","DOIUrl":"10.1016/j.mssp.2025.109663","url":null,"abstract":"<div><div>In this paper, we demonstrate the implementation of a doping scheme for 3C-SiC thin films using the alternating supply deposition (ASD) technique in a low-pressure chemical vapor deposition (LPCVD) system. The moment of introduction of the dopant is critical and resulted in different thin film resistivities. By synthesizing 3C-SiC thin films with the most promising dopant scheme and increasing ammonia (NH<sub>3</sub>) flow rates we provide insight of the capabilities of ASD doping. The electrical properties were characterized using the circular transfer length method (CTLM). Promising values for the specific contact resistance around 3·10<sup>−6</sup> Ω cm<sup>2</sup> were measured and resistivities of <em>ρ =</em> 0.02 Ω cm, which is comparable to state-of-the-art thin film resistivities for polycrystalline 3C-SiC. The temperature dependence of undoped and highly doped thin films are compared from room temperature to 300 °C. For both cases a negative temperature coefficient was determined, which is explained by the effect of incomplete ionization of the dopant. Lowest resistivities of 0.014 Ω cm were measured at 300 °C. Chemical analysis demonstrates for elevated NH<sub>3</sub> flow rates a change from highly <111> oriented poly 3C-SiC thin films to amorphous and highly insulating SiCN thin films of only 25 % of the maximum measured thickness. This can be explained by the competition of C and N atoms for Si bonds, which is dominated by nitrogen atoms at higher NH<sub>3</sub> flow rates.</div></div>","PeriodicalId":18240,"journal":{"name":"Materials Science in Semiconductor Processing","volume":"197 ","pages":"Article 109663"},"PeriodicalIF":4.2,"publicationDate":"2025-05-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144089572","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Epoxy molding compounds for high-performance electronic packaging: A review on recent studies 高性能电子封装用环氧成型化合物的研究进展

IF 4.2 3区工程技术

Materials Science in Semiconductor Processing Pub Date : 2025-05-19 DOI: 10.1016/j.mssp.2025.109665

Lee Eyann , Muhamed Abdul Fatah Muhamed Mukhtar , Abdullah Aziz Saad , Mariatti Jaafar

{"title":"Epoxy molding compounds for high-performance electronic packaging: A review on recent studies","authors":"Lee Eyann , Muhamed Abdul Fatah Muhamed Mukhtar , Abdullah Aziz Saad , Mariatti Jaafar","doi":"10.1016/j.mssp.2025.109665","DOIUrl":"10.1016/j.mssp.2025.109665","url":null,"abstract":"<div><div>With the continuous technological advancement and the miniaturization of integrated circuits (ICs) aligned with Moore's Law, the performance of ICs has significantly improved, enabling their widespread use in harsh environments. However, traditional epoxy molding compounds (EMCs) fall short of providing adequate protection for these ICs under such conditions. Consequently, the materials of EMC have been extensively modified and optimized to achieve high thermal stability, thermal conductivity, low moisture absorption, viscosity, coefficient of thermal expansion (CTE), dielectric constant and loss. To provide a better understanding of these advancements, this review article addresses the crucial role of individual EMC constituents, including epoxy resins, curing agents, fillers, coupling agents, flame retardants, and toughening agents, in achieving these essential properties. The recent studies on these materials and their variants are discussed and compared. Furthermore, the types of epoxies, such as epoxy copolymers and bio-epoxies, and various filler materials, including silica, aluminium oxide, aluminium nitride, and hexagonal boron nitride are examined. Additionally, the significance and fundamental principles of these key EMC properties are discussed, and recent research aimed at achieving them is reviewed from various aspects. By presenting a comprehensive analysis of recent studies, this paper aims to provide fundamental insights and practical directions for researchers in the development of next-generation EMCs for high-performance IC packaging.</div></div>","PeriodicalId":18240,"journal":{"name":"Materials Science in Semiconductor Processing","volume":"197 ","pages":"Article 109665"},"PeriodicalIF":4.2,"publicationDate":"2025-05-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144089507","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Unveiling the prospect of copper iodide as hole transporting layer in perovskite solar cell by selective dopant strategy: A review 用选择性掺杂策略揭示了碘化铜作为钙钛矿太阳能电池空穴传输层的前景

IF 4.2 3区工程技术

Materials Science in Semiconductor Processing Pub Date : 2025-05-19 DOI: 10.1016/j.mssp.2025.109679

O.V. Aliyaselvam , A.N. Mustafa , M.A. Azam , P. Chelvanathan , M.A. Islam , S. Mahalingam , F. Arith

{"title":"Unveiling the prospect of copper iodide as hole transporting layer in perovskite solar cell by selective dopant strategy: A review","authors":"O.V. Aliyaselvam , A.N. Mustafa , M.A. Azam , P. Chelvanathan , M.A. Islam , S. Mahalingam , F. Arith","doi":"10.1016/j.mssp.2025.109679","DOIUrl":"10.1016/j.mssp.2025.109679","url":null,"abstract":"<div><div>The burgeoning field of perovskite solar cells (PSCs) continues to attract research interest, particularly with the potential of copper iodide (CuI) as a high-performing hole transport layer (HTL). This review comprehensively examines the intrinsic advantages of solid-state CuI as HTL for PSC applications due to its exceptional p-type conductivity, ambient stability, and ease of synthesis. Moreover, the review explores cutting-edge strategies for mitigating defects to preserve the power conversion efficiency (PCE) and stability of the device including optimization of synthesis, defect engineering through stoichiometry control, interface engineering and doping engineering. Notably, lanthanum (La) doping engineering on CuI demonstrates remarkable potential, offering enhanced structural compatibility due to its ionic size, improved band alignment, and a substantial reduction in deep-level traps contributing to carrier recombination. This groundbreaking doping strategy produces La-doped CuI HTL that addresses the challenges at the perovskite/HTL interface, leading to an elevation in the PCE of the PSCs. As PSC technology advances toward commercial viability, CuI emerges as a linchpin in accelerating progress in the quest for highly efficient and stable solar energy solutions.</div></div>","PeriodicalId":18240,"journal":{"name":"Materials Science in Semiconductor Processing","volume":"197 ","pages":"Article 109679"},"PeriodicalIF":4.2,"publicationDate":"2025-05-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144089571","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Efficiently tribocatalytic water purification of SrSb2O6 ceramic powder with a 3.9 eV high band-gap 3.9 eV高带隙SrSb2O6陶瓷粉的高效摩擦催化水净化

IF 4.2 3区工程技术

Materials Science in Semiconductor Processing Pub Date : 2025-05-18 DOI: 10.1016/j.mssp.2025.109690

Guoguang Yao , Xu Gao , Fanfan Pan , Luyi Wang , Hongkai Liu , Cuijin Pei , Jin Liu , Yanmin Jia , Fu Wang

{"title":"Efficiently tribocatalytic water purification of SrSb2O6 ceramic powder with a 3.9 eV high band-gap","authors":"Guoguang Yao , Xu Gao , Fanfan Pan , Luyi Wang , Hongkai Liu , Cuijin Pei , Jin Liu , Yanmin Jia , Fu Wang","doi":"10.1016/j.mssp.2025.109690","DOIUrl":"10.1016/j.mssp.2025.109690","url":null,"abstract":"<div><div>Most existing tribocatalysts are semiconductor materials with narrow band-gap, which are unsuitable for investigating the tribocatalytic mechanism. In this work, high band-gap SrSb<sub>2</sub>O<sub>6</sub> powders fabricated via solid-state reaction route exhibited obvious tribocatalytic dye-decomposition performance, with a maximum decomposition ratio of 91.5 % for 5.0 mg L<sup>−1</sup> Rhodamine B (RhB) dye, 1.0 g L<sup>−1</sup> SrSb<sub>2</sub>O<sub>6</sub> solutions, and stirring for 6 h with a speed of 400 rpm. The RhB degradation process followed first-order kinetics with the maximum reaction rate constant of 0.38 h<sup>−1</sup>. Comprehensive experimental results indicates that ·OH radicals are the primary active substances for RhB decomposition. The decomposition routes of RhB during tribocatalysis were determined from identified intermediates. The SrSb<sub>2</sub>O<sub>6</sub> catalyst maintained excellent tribocatalytic performance for RhB dyes after five cycles. This study opens up a new perspective about water purification utilizing tribocatalytic effect of high band-gap materials.</div></div>","PeriodicalId":18240,"journal":{"name":"Materials Science in Semiconductor Processing","volume":"197 ","pages":"Article 109690"},"PeriodicalIF":4.2,"publicationDate":"2025-05-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144072516","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Optical properties of SnX (X=S,Se): Insight from independent particle approximation and Bethe Salpeter equation SnX （X=S,Se）的光学性质：来自独立粒子近似和Bethe Salpeter方程的洞察

IF 4.2 3区工程技术

Materials Science in Semiconductor Processing Pub Date : 2025-05-18 DOI: 10.1016/j.mssp.2025.109609

Muhammad Asif , Altaf Ur Rahman , Gul Rahman , Imed Boukhris , M.S. Al-Buriahi , Zainab Mufarreh Elqahtani

{"title":"Optical properties of SnX (X=S,Se): Insight from independent particle approximation and Bethe Salpeter equation","authors":"Muhammad Asif , Altaf Ur Rahman , Gul Rahman , Imed Boukhris , M.S. Al-Buriahi , Zainab Mufarreh Elqahtani","doi":"10.1016/j.mssp.2025.109609","DOIUrl":"10.1016/j.mssp.2025.109609","url":null,"abstract":"<div><div>First-principles calculations based on density functional theory (DFT) are carried out to study the electronic, structural and optical properties of bulk SnX (X = S, Se). The calculated cohesive energy calculations show that bond strength is smaller in SnSe than SnS that makes SnS energetically more stable than SnSe. Electronic band structures show that, both SnS and SnSe are indirect band gap semiconductors with band gap of 1.09 eV and 0.72 eV, respectively. The BSE method combined with IPA is employed to incorporate excitonic effects, accurately capturing the optical response of the materials. The static dielectric constants of SnS and SnSe exhibit directional anisotropy and show a significant increase when excitonic interactions are considered, highlighting the importance of many-body effects in accurately predicting optical properties. The exciton binding energy and Bohr radius are also calculated to assess the strength of electron–hole interactions. The plasmon frequency is found to be larger for SnS as compared with SnSe due to larger carrier density of SnS. It is shown that SnSe has larger refractive index and extinction coefficient than SnS in both IPA and BSE. Most of the light is absorbed in the visible region for both materials. Both materials have efficient absorption in near infrared (IR) and visible range (VR) and maximum in near ultraviolet (UV) range, but SnSe has a little higher absorption coefficient than SnS in visible spectrum region due to smaller band gap than SnS. Overall, BSE under estimates the optical properties in the UV region as compared with IPA. We, therefore, believe that both materials are efficient for photovoltaic applications.</div></div>","PeriodicalId":18240,"journal":{"name":"Materials Science in Semiconductor Processing","volume":"197 ","pages":"Article 109609"},"PeriodicalIF":4.2,"publicationDate":"2025-05-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144072517","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0