Materials Science in Semiconductor Processing最新文献

{"title":"Fabrication of nanobullet structures composed of gold nanoparticles and titanium dioxide","authors":"Shin-ichiro Yanagiya ,&nbsp;Akihiro Yamamoto ,&nbsp;Satoshi Sugano ,&nbsp;Retsuo Kawakami","doi":"10.1016/j.mssp.2025.109557","DOIUrl":"10.1016/j.mssp.2025.109557","url":null,"abstract":"<div><div>A nanobullet structure consisting of gold nanoparticles (AuNPs) at the apex and rod-shaped titanium dioxide in the main body was synthesized. Titanium oxide was vapor-phase-deposited by sputtering onto AuNPs (diameter of 40 nm) dispersed on a polymer substrate. Titanium dioxide nucleated preferentially on the AuNPs and grew via unidirectional solidification. A soft plastic film was selected as the substrate to isolate the nanobullet structures, which were mechanically separated by bending. High-resolution transmission electron microscopy and selected area diffraction analysis revealed that titanium dioxide exhibited an amorphous structure near the AuNPs, and anatase-type crystallites were observed after 100 nm of TiO₂ growth. The amorphous phase appears because the anatase phase was unstable due to the strain introduced by the curvature of the AuNPs. Thermal treatment resulted in crystallization of TiO₂ near the AuNPs.</div></div>","PeriodicalId":18240,"journal":{"name":"Materials Science in Semiconductor Processing","volume":"195 ","pages":"Article 109557"},"PeriodicalIF":4.2,"publicationDate":"2025-04-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143874905","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Designing of bithiophene based compatible non-fullerene acceptors with enhanced photovoltaic properties","authors":"Fatiqa Zafar ,&nbsp;Asifa Rani ,&nbsp;Rimsha Irshad ,&nbsp;Fareeha Bashir ,&nbsp;Waseeq-ul-Islam Zafar ,&nbsp;Riaz Hussain ,&nbsp;Javed Iqbal ,&nbsp;Muhammad Adnan","doi":"10.1016/j.mssp.2025.109604","DOIUrl":"10.1016/j.mssp.2025.109604","url":null,"abstract":"<div><div>In the present study, five small novel acceptor molecules were theoretically designed to improve the performance of organic solar cells by modifying the end-group of the reference (R) molecule. The optoelectronic properties of R and designed molecules (L1–L5) were analyzed using the MPW1PW91 functional with the 6-31G (d,p) basis set, while solvent-state calculations were performed with time-dependent self-consistent field (TD-SCF) simulations. Compared to the R molecule, the modified molecules exhibited a bathochromic shift in the absorption maxima (<span><math><mrow><msub><mi>λ</mi><mi>max</mi></msub></mrow></math></span>), lower excitation energy (<span><math><mrow><msub><mi>E</mi><mi>x</mi></msub></mrow></math></span>), and a decreased HOMO-LUMO gap (<span><math><mrow><msub><mi>E</mi><mrow><mi>g</mi><mi>a</mi><mi>p</mi></mrow></msub></mrow></math></span>). Moreover, in evaluated environment (chloroform), the L3 molecule displayed the lowest <span><math><mrow><msub><mi>E</mi><mi>x</mi></msub></mrow></math></span> (2.22 eV), highest <span><math><mrow><msub><mi>λ</mi><mi>max</mi></msub></mrow></math></span> (558 nm), and smallest <span><math><mrow><msub><mi>E</mi><mrow><mi>g</mi><mi>a</mi><mi>p</mi></mrow></msub></mrow></math></span> (2.38 eV). The open-circuit voltage (<span><math><mrow><msub><mi>V</mi><mrow><mi>o</mi><mi>c</mi></mrow></msub></mrow></math></span>) for all small molecule acceptors was determined by pairing them with the PTB7-Th donor. Here, L3 exhibited the best values for fill factor (FF) (0.9175) and <span><math><mrow><msub><mi>V</mi><mrow><mi>o</mi><mi>c</mi></mrow></msub></mrow></math></span> (1.58 eV). Outcomes of present study elucidated that the modified molecules may be used in the production of OSCs with enhanced photovoltaic characteristics.</div></div>","PeriodicalId":18240,"journal":{"name":"Materials Science in Semiconductor Processing","volume":"195 ","pages":"Article 109604"},"PeriodicalIF":4.2,"publicationDate":"2025-04-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143874984","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Synthesis, structural characterization, and photoluminescence properties of Dy3+-Doped CaB4O7 Phosphors: Influence of Li+ and K+ Co-doping","authors":"Abeer S. Altowyan ,&nbsp;U.H. Kaynar ,&nbsp;H. Aydin ,&nbsp;Jabir Hakami ,&nbsp;M.B. Coban ,&nbsp;K. Cikrikci ,&nbsp;M. Ayvacikli ,&nbsp;N. Can","doi":"10.1016/j.mssp.2025.109593","DOIUrl":"10.1016/j.mssp.2025.109593","url":null,"abstract":"<div><div>This study examines the structural and photoluminescence properties of Dy³⁺-doped CaB₄O₇ phosphors co-doped with Li⁺ and K⁺, synthesized via the high-temperature solid-state reaction method. X-ray diffraction (XRD) and Rietveld refinement confirmed the successful incorporation of Dy³⁺ (substituting for Ca²⁺), Li⁺ (interstitial), and K⁺ (interstitial) ions within the CaB₄O₇ lattice at co-doping concentrations of <span><math><mrow><mi>x</mi></mrow></math></span> = 0.02 wt percent (wt%), <span><math><mrow><mi>y</mi></mrow></math></span> = 0.05 wt%, and <span><math><mrow><mi>z</mi></mrow></math></span> = 0.10 wt%, respectively. This co-doping induced localized lattice distortions while maintaining the overall crystal symmetry. Fourier-transform infrared (FTIR) and Raman spectroscopy reveal modifications in borate network vibrational modes, indicating the stabilizing effects of Li⁺ and K⁺ co-doping. Photoluminescence (PL) analysis demonstrates an unusually intense red emission (⁴F_9/2 → ⁶H_11/2), deviating from typical Dy³⁺ emission trends, which is attributed to local symmetry distortions and enhanced electric dipole transitions. Judd-Ofelt analysis confirms a high Ω₆ parameter (5.42 × 10⁻²⁰ cm²), further supporting this enhancement. Li⁺ co-doping significantly enhances PL, increasing yellow emission by a factor of 7.64 and red emission by 4.03. Similarly, K⁺ co-doping influences the crystal field environment, leading to a 6.36-fold boost in yellow luminescence and a 3.60-fold increase in red luminescence. Temperature-dependent PL studies reveal an anti-thermal quenching effect, with red emission intensity increasing up to 550 K, indicating potential applications in high-temperature environments. The findings demonstrate that Li⁺ and K⁺ co-doping modulates the emission characteristics of Dy³⁺-doped CaB₄O₇, reinforcing its applicability in solid-state lighting and optoelectronic devices.</div></div>","PeriodicalId":18240,"journal":{"name":"Materials Science in Semiconductor Processing","volume":"195 ","pages":"Article 109593"},"PeriodicalIF":4.2,"publicationDate":"2025-04-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143874985","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Investigating the electronic properties of pentagraphene and pentasilicene and its application in semiconductor devices","authors":"Mehran Vali ,&nbsp;Amirhossein Bayani","doi":"10.1016/j.mssp.2025.109599","DOIUrl":"10.1016/j.mssp.2025.109599","url":null,"abstract":"<div><div>Pentasilicene and pentagraphene are two novel two-dimensional allotropes of silicon and carbon, respectively, characterized by a pentagonal lattice structure and semiconducting electronic properties. However, differences in their structures lead to distinct electronic characteristics. In this study, we simulated a field-effect nanotransistor using both materials and analyzed the resulting differences from a physical standpoint. Our simulations employed density functional theory (DFT) in conjunction with the non-equilibrium Green's function (NEGF) method. The results demonstrate that pentasilicene has significant potential for use as a field-effect transistor, while pentagraphene is not suitable for this application due to its relatively large energy band gap. We observed that the pentasilicene field-effect transistor exhibits stable switching behavior with a high on/off current ratio exceeding 10⁴ at room temperature. Additionally, the device's output characteristics reveal negative differential conductance with a favorable peak-to-valley ratio.</div></div>","PeriodicalId":18240,"journal":{"name":"Materials Science in Semiconductor Processing","volume":"195 ","pages":"Article 109599"},"PeriodicalIF":4.2,"publicationDate":"2025-04-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143874989","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"The modulation of electronic properties and mechanism analysis of the surface functionalization of TH-BP","authors":"Xihao Peng ,&nbsp;Ying Yang ,&nbsp;Yan Li ,&nbsp;Xucheng Liu","doi":"10.1016/j.mssp.2025.109597","DOIUrl":"10.1016/j.mssp.2025.109597","url":null,"abstract":"<div><div>The novel two-dimensional material TH-BP possesses highly anisotropic carrier mobility and excellent visible light absorption range, showing potential applications in the fields of optoelectronics and photocatalysis. In this paper, the first-principles method was employed to theoretically predict the impact of hydrogenation and fluorination on the surface of TH-BP on its electronic structure, achieving the mutual transformation between the semiconductor band characteristics and metallic band characteristics of TH-BP. It was found that an increase in surface adsorption not only leads to an enhancement of the bandgap width of TH-BP but also enables the transition from indirect to direct bandgap at a H adsorption rate of 50 %. Concurrently, the effective mass of electrons was significantly reduced after functionalization, which is beneficial for improving mobility. Analysis has shown that the changes in electronic properties are caused by the transformation of originally <em>sp</em>² hybridized atoms to <em>sp</em>³ hybridized ones after the adsorption of H/F atoms, which results in the breaking of double bonds, the disappearance of π bonds, and the elimination of the energy bands contributed by π bonds, leading to changes in the band structure.</div></div>","PeriodicalId":18240,"journal":{"name":"Materials Science in Semiconductor Processing","volume":"195 ","pages":"Article 109597"},"PeriodicalIF":4.2,"publicationDate":"2025-04-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143874986","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Photoelectrochemical Ag/BiPO4/TiO2 nanorod array-based aptamer biosensor for AFP tumor marker trace detection","authors":"Yao Wang ,&nbsp;Tao Jing ,&nbsp;Haiyan Qi ,&nbsp;Yunpeng Zhao ,&nbsp;Shufeng Wan ,&nbsp;Jinxin Li","doi":"10.1016/j.mssp.2025.109583","DOIUrl":"10.1016/j.mssp.2025.109583","url":null,"abstract":"<div><div>Alpha-fetoprotein (AFP) serves as a critical tumor marker for the early diagnosis of primary liver cancer. In this study, a novel photoelectrochemical (PEC) aptasensor was developed based on a nanorod array (NRA) electrode composed of Ag nanoparticles (Ag NPs), BiPO₄, and TiO₂. This aptasensor enabled rapid and highly sensitive detection of trace levels of AFP. The formation of a type II n-n heterojunction between BiPO₄ and TiO₂, coupled with the surface plasmon resonance (SPR) effect of Ag NPs, significantly enhanced the separation efficiency of photogenerated electrons-hole pairs and expanded the absorption range under visible light. As a result, the PEC aptasensor exhibited enhanced photoresponse, outstanding stability, and exceptional selectivity in real sample analyses. A linear relationship was observed between the photocurrent response and the logarithm of AFP concentration within the AFP concentration range from 0.001 to 500 ng/mL, with a detection limit (LOD) of 0.53 ng/mL (S/N = 3). These results suggest the proposed PEC aptasensor is a promising platform for reliable and sensitive AFP detection in clinical diagnostics.</div></div>","PeriodicalId":18240,"journal":{"name":"Materials Science in Semiconductor Processing","volume":"195 ","pages":"Article 109583"},"PeriodicalIF":4.2,"publicationDate":"2025-04-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143874987","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"The electronic and optical properties of monolayer Y2A2BB′ (A = S, Se, or Te, B, B′ = I, Br, Cl, or F; B ≠ B′) by first-principal calculation","authors":"Lu-Yue Liu,&nbsp;Jin-You Li,&nbsp;Dan-Ni Wang,&nbsp;Yu-Guo Liu,&nbsp;Jun-Qi Li,&nbsp;Man-Yi Duan","doi":"10.1016/j.mssp.2025.109603","DOIUrl":"10.1016/j.mssp.2025.109603","url":null,"abstract":"<div><div>Monolayer Y₂Se₂<em>BB′</em> (<em>B</em>, <em>B′</em> = I, Br, Cl, or F; <em>B</em> ≠ <em>B′</em>) has attracted significant attention as a promising optoelectronic material for photodetection and photocatalysis. However, other elements in the same family as Se, such as S and Te, which share similar chemical properties, have been less explored. In this study, we systematically investigated the electronic and optical properties of monolayer Y₂<em>A</em>₂<em>BB′</em> (<em>A</em> = S, Se, or Te; <em>B</em>, <em>B′</em> = I, Br, Cl, or F; <em>B</em> ≠ <em>B′</em>), and the trends of various properties under biaxial strain. The band gap of Y₂<em>A</em>₂<em>BB′</em> varies is near the visible light spectrum, indicating its potential for application in the visible light region. All Y₂<em>A</em>₂<em>BB′</em> compounds exhibit a high absorption coefficient in the ultraviolet range, while Y₂Te₂<em>BB′</em> shows excellent performance in the visible light region, with an absorption coefficient reaching 3 × 10⁵ cm⁻¹. By applying strains, we achieved a broad absorption range and successfully enabled Y₂Te₂BrCl to span the redox potential of water, facilitating efficient water decomposition. Our calculations provide valuable insights into the properties of Y₂<em>A</em>₂<em>BB′</em>, supporting their potential use in optoelectronic devices.</div></div>","PeriodicalId":18240,"journal":{"name":"Materials Science in Semiconductor Processing","volume":"195 ","pages":"Article 109603"},"PeriodicalIF":4.2,"publicationDate":"2025-04-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143874904","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Investigation of resistive switching properties in reliable, forming-free RRAM devices based on amorphous Sm2Zr2O7 thin films","authors":"Hsin-Ching Tai,&nbsp;Cheng-Liang Huang","doi":"10.1016/j.mssp.2025.109596","DOIUrl":"10.1016/j.mssp.2025.109596","url":null,"abstract":"<div><div>The resistive switching (RS) behavior of amorphous Sm₂Zr₂O₇ thin films was investigated for their potential application in resistive random-access memory (RRAM) devices. The devices were fabricated using indium tin oxide (ITO)-coated glass as the bottom electrode and aluminum (Al) as the top electrode. All devices exhibited forming-free behavior, likely attributed to the defective fluorite structure of the Sm₂Zr₂O₇ compound. The RS properties were further optimized through appropriate annealing processes, which generated additional oxygen vacancies. Moreover, a post-metal annealing treatment formed an AlO_x interface layer, significantly enhancing the RS performance. The sample subjected to a 300 °C PMA treatment demonstrated reliable operation for up to 1606 cycles, achieving a high R_on/R_off ratio of approximately ∼10³ under SET/RESET voltages of 1.43 V and 0.42 V, respectively, with retention stability lasting for 10⁴ s at both room temperature and 85 °C. These findings highlight that Sm₂Zr₂O₇, combined with intrinsic properties and appropriate thermal treatments, is a promising candidate for low-temperature, CMOS-compatible non-volatile RRAM applications.</div></div>","PeriodicalId":18240,"journal":{"name":"Materials Science in Semiconductor Processing","volume":"195 ","pages":"Article 109596"},"PeriodicalIF":4.2,"publicationDate":"2025-04-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143868951","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Co doped Bi2Se3 topological insulator: a combined theoretical and experimental study","authors":"Ravi Kumar ,&nbsp;D.S. Sisodiya ,&nbsp;Kritika Vijay ,&nbsp;Soma Banik ,&nbsp;Shashwati Sen ,&nbsp;P.D. Babu ,&nbsp;Dibyendu Bhattacharyya","doi":"10.1016/j.mssp.2025.109572","DOIUrl":"10.1016/j.mssp.2025.109572","url":null,"abstract":"<div><div>Research on magnetic ion doping in topological insulators like Bi₂Se₃ is gaining prominence rapidly since it has prospective technological implications and also has significant importance in experimental verification of exotic fundamental physical concepts. In this study, we present a comprehensive investigation of Co-doped Bi₂Se₃ by integrating advanced ab initio density functional theory (DFT) calculations with an array of experimental techniques including X-ray diffraction (XRD), X-ray absorption spectroscopy (XAS) and angle-resolved photoemission spectroscopy (ARPES) using synchrotron radiation. This detailed approach goes beyond previous research by not only confirming the long-range crystalline order but also providing a detailed insight into the local atomic environment and electronic structure around Co dopants. Our combined theoretical and experimental investigations undoubtedly reveal that Co atoms preferentially occupy interstitial sites within the van der Waals gap, a result which has provided conclusive clarity regarding the preferred sites for Co doping in Bi₂Se₃. Apart from the above, our theoretical study corroborated by experimental results also explains how Co doping affects magnetic properties of Bi₂Se₃. This enhanced understanding of the interplay between dopant site preference, oxidation state, and resultant magnetic behavior is pivotal for designing next generation topological insulator-based devices with optimized performance.</div></div>","PeriodicalId":18240,"journal":{"name":"Materials Science in Semiconductor Processing","volume":"195 ","pages":"Article 109572"},"PeriodicalIF":4.2,"publicationDate":"2025-04-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143864647","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Improvement of bonding interface in electroless copper-plated joints using a high copper concentration copper–quadrol complex solution","authors":"J.H. Huang ,&nbsp;P.S. Shih ,&nbsp;S.J. Gräfner ,&nbsp;V. Renganathan ,&nbsp;Y.E. Chen ,&nbsp;M.H. Hsieh ,&nbsp;C.L. Kao ,&nbsp;Y.S. Lin ,&nbsp;Y.C. Hung ,&nbsp;A.M. Moreno ,&nbsp;T. Jiang ,&nbsp;C.R. Kao","doi":"10.1016/j.mssp.2025.109601","DOIUrl":"10.1016/j.mssp.2025.109601","url":null,"abstract":"<div><div>In the semiconductor industry, scaling down high-density, 3D-stacked interconnections is critical for enhancing efficiency and performance. However, this miniaturization introduces challenges that require innovative chip packaging solutions. A previous study developed a chip packaging process using a high copper concentration and high plating rate electroless copper plating solution. This process offers advantages such as low temperature, short processing time, and a pressureless nature, which can address the problems encountered by other packaging processes. However, this process is challenged by the presence of voids at the bonded interface. Therefore, this study builds on previous work by exploring two strategies for minimizing void formation in electroless copper-plated joints: reducing pillar size and altering pillar geometry. A copper–quadrol complex solution was used at 35 °C for 7 min to bond the copper pillar joints. The experiments showed that reducing the effective pillar diameter significantly increased the bonded area percentage, with a notable 97 % bonded area at a 3.5 μm effective pillar diameter. Additionally, the dome-shaped pillars demonstrated superior performance by effectively eliminating large voids compared with flat-topped pillars. These findings indicate that void-free bonding can be achieved by strategically adjusting both the geometry and size of the pillars. Moreover, this work not only provides the semiconductor industry with methods to reduce void size but also demonstrates a potential process to address the critical challenges posed by miniaturization in chip packaging.</div></div>","PeriodicalId":18240,"journal":{"name":"Materials Science in Semiconductor Processing","volume":"194 ","pages":"Article 109601"},"PeriodicalIF":4.2,"publicationDate":"2025-04-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143860589","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}