Materials Science in Semiconductor Processing最新文献

{"title":"Research on the development and application of 400–2500 nm broadband transparent conductive ITO electrodes","authors":"Shaojie Peng,&nbsp;Menglin Li,&nbsp;Yuxuan Du,&nbsp;Tao Ma,&nbsp;Shengyong Wang,&nbsp;Huan Liu","doi":"10.1016/j.mssp.2026.110467","DOIUrl":"10.1016/j.mssp.2026.110467","url":null,"abstract":"<div><div>Indium tin oxide (ITO) is one of the most widely used transparent conducting oxides (TCOs) in optoelectronic devices. However, most studies and evaluation models focus only on the visible spectrum, while broadband (400–2500 nm) applications, such as quantum dot (QD) detectors and infrared photovoltaics, are limited by the low infrared transmittance of ITO. In this work, we propose a new figure of merit (FOM) suitable for broadband evaluation to overcome the limitations of the conventional Haacke model. Orthogonal experimental design was employed to systematically investigate the influence of sputtering power, time, and pressure on the broadband optical and electrical properties of ITO films. The optimized ITO electrode, fabricated entirely at room temperature, exhibited an average transmittance of 87.4 % and a sheet resistance of 49.8 <em>Ω/sq</em> across the 400–2500 nm range. Drude–Lorentz analysis revealed that the balance between free-carrier absorption and bound-state transitions at ∼1031 nm plays a critical role in the broadband response. To demonstrate practical applicability, the optimized ITO was integrated into a PbS QD detector, achieving an external quantum efficiency (EQE) of 47 % and a responsivity of 0.4 A/W at 1320 nm. These results highlight a practical route for developing broadband transparent electrodes compatible with thermally sensitive optoelectronic devices.</div></div>","PeriodicalId":18240,"journal":{"name":"Materials Science in Semiconductor Processing","volume":"207 ","pages":"Article 110467"},"PeriodicalIF":4.6,"publicationDate":"2026-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"146190624","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Effects of metal diffusion on electrical performance and reliability of low dielectric constant materials under thermal stress","authors":"Rajib Chowdhury,&nbsp;Thomas Poche,&nbsp;Seonhee Jang","doi":"10.1016/j.mssp.2026.110477","DOIUrl":"10.1016/j.mssp.2026.110477","url":null,"abstract":"<div><div>This study investigated the impact of metal diffusion on the electrical performance and reliability of low dielectric constant (low-<em>k</em>) SiCOH thin films fabricated by plasma-enhanced chemical vapor deposition. The deposition plasma power substantially influenced the <em>k</em> value, with higher plasma power leading to an increased <em>k</em> value due to film densification and reduction in methyl groups. To evaluate the electrical performance and reliability of SiCOH films, metal-insulator-semiconductor (MIS) capacitors were fabricated using different metals of Al, Cu, Co, Mo, and W as metal gates. The SiCOH films were subjected to a thermal annealing process to apply thermal stress to the films. After annealing, the <em>k</em> value decreased due to structural changes in the films. Electrical characterization suggested that the annealing process elevated the leakage current in MIS capacitors, particularly for Cu-gate MIS capacitors, where a significant Cu diffusion into the SiCOH film degraded the film's dielectric properties. In contrast, the Co-gate MIS capacitors demonstrated better electrical stability in terms of leakage current and breakdown field. Understanding the role of metal diffusion using different metal gates is critical for optimizing the performance of the SiCOH thin films as an interlayer dielectric in advanced microelectronics.</div></div>","PeriodicalId":18240,"journal":{"name":"Materials Science in Semiconductor Processing","volume":"207 ","pages":"Article 110477"},"PeriodicalIF":4.6,"publicationDate":"2026-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"146190694","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Comparison of MAPbI3 thin-film fabrication for improved optoelectronic and thin-film triode performance","authors":"Tsai-Lun Chen ,&nbsp;Thangaraji Vasudevan ,&nbsp;Hariharan Rajasekaran,&nbsp;Lung-Chien Chen","doi":"10.1016/j.mssp.2026.110448","DOIUrl":"10.1016/j.mssp.2026.110448","url":null,"abstract":"<div><div>This study presents a comprehensive investigation of methylammonium lead iodide (MAPbI₃) thin films fabricated via one-step and two-step methods, focusing on their structural, optical, and electronic characteristics for Thin-Film Triode (TFT) applications. Structural and optical analyses using UV–Vis, XRD, and SEM indicate that one-step films possess higher crystallinity, larger grains, and stronger light absorption, while two-step films exhibit smoother, denser morphologies with more uniform grains, reduced defect density, and markedly longer carrier lifetimes (34.5 ns vs. 14.1 ns), indicating suppressed nonradiative recombination. Electrical characterization of TFT devices with a 2 mm channel width reveals that the two-step films improved performance, including linear drain current-gate voltage characteristics, lower channel resistance, and a pronounced photo response with photocurrent exceeding the dark current by 50 %. Frequency response measurements further show stable square-wave tracking up to 5 MHz, a resonant behaviour near 20 MHz, and progressive signal attenuation above 40 MHz. These findings confirm that additive-free MAPbI₃ thin films, especially those obtained through the two-step method, show a moderate improvement in device performance.</div></div>","PeriodicalId":18240,"journal":{"name":"Materials Science in Semiconductor Processing","volume":"207 ","pages":"Article 110448"},"PeriodicalIF":4.6,"publicationDate":"2026-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"146081131","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Atomistic simulation and experimental correlation analysis of metallization-dependent interfacial diffusion and shear failure in pressure-sintered Cu joints for SiC devices","authors":"Xinghe Luan ,&nbsp;Hengrui Li ,&nbsp;Liguo Ding ,&nbsp;Xuemin Li ,&nbsp;Hongjie Zhang ,&nbsp;Kewei Li ,&nbsp;Longzao Zhou ,&nbsp;Fengshun Wu","doi":"10.1016/j.mssp.2026.110475","DOIUrl":"10.1016/j.mssp.2026.110475","url":null,"abstract":"<div><div>The reliability of Cu-based sintered interconnections is strongly governed by interfacial metallization, which controls atomic diffusion, microstructural evolution, and mechanical integrity. This study combines molecular dynamics (MD) simulations and experiments to clarify how chip and substrate metallization affect the sintering behavior and shear performance of Cu joints for silicon carbide (SiC) power devices. Four systems—Ag-Cu, Au-Cu, Ag-Ag, and Ag-Ni—were examined. MD results show that the Ag-Cu interface promotes stable face-centered cubic (FCC) formation, effective dislocation annihilation, and high shear resistance, whereas the Au-Cu and Ag-Ni interfaces exhibit stacking-fault buildup, amorphization, and premature failure. Experiments validate these trends: Ag-plated chips achieve 22.99 % lower porosity and 10.47 % higher connection rates than Au-plated chips, while Ag-plated substrates suffer voiding due to asymmetric Cu-Ag diffusion. Ni plating suppresses interdiffusion entirely, leading to bonding failure. Integrated analysis of densification, interfacial bonding, strength, and fracture behavior establishes the hierarchy bare Cu &gt; Ag-plated &gt; Ni-plated, identifying bare Cu substrates with Ag-plated chips as the most reliable configuration. These results provide mechanistic insight into metallization–diffusion coupling and practical guidance for designing robust interconnects in high-power electronic packaging.</div></div>","PeriodicalId":18240,"journal":{"name":"Materials Science in Semiconductor Processing","volume":"207 ","pages":"Article 110475"},"PeriodicalIF":4.6,"publicationDate":"2026-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"146081135","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Recent advances in inorganic core/shell nanostructures for enhanced LED performance: A comprehensive review","authors":"Vaishnavi Bethur,&nbsp;S Venkataprasad Bhat","doi":"10.1016/j.mssp.2026.110459","DOIUrl":"10.1016/j.mssp.2026.110459","url":null,"abstract":"<div><div>Incorporating nanoparticles into light-emitting diode (LED) technology can significantly enhance performance in several ways, including improving external quantum efficiency (EQE), color purity, and brightness. However, challenges such as efficiency losses and stability issues limit their practical application. In this regard, new strategies are required to passivate the surface of nanoparticles, thereby enhancing their stability and optical properties. Core/shell nanostructures play a crucial role in advancing LED technology by enhancing their light-emission characteristics. The choice of core and shell materials is critical, since each combination offers unique advantages. The selection of shell material is further determined by the specific requirements and desired performance of the LED device. Herein, we review the effect of the shell on various inorganic luminescent core nanomaterials in enhancing LED performance. Unlike previous reports focusing on specific material systems, this review considers different combinations of core/shell nanostructures, including chalcogenides, perovskites, and rare earth (RE)-based core nanomaterials, to overcome the critical challenges in LED technology, with insights into the future pathways to be explored.</div></div>","PeriodicalId":18240,"journal":{"name":"Materials Science in Semiconductor Processing","volume":"207 ","pages":"Article 110459"},"PeriodicalIF":4.6,"publicationDate":"2026-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"146081214","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Shape-controlled embedded silver nanoparticles and nanopits in silicon substrates (100), (110), (111): A comparative study of potential SERS application","authors":"Anna Ermina ,&nbsp;Artem Larin ,&nbsp;Nikolay Solodovchenko ,&nbsp;Danila Markov ,&nbsp;Darina Krasilina ,&nbsp;Nadejda Belskaya ,&nbsp;Kristina Prigoda ,&nbsp;Vladimir Bolshakov ,&nbsp;Yuliya Zharova","doi":"10.1016/j.mssp.2026.110462","DOIUrl":"10.1016/j.mssp.2026.110462","url":null,"abstract":"<div><div>This study reports an efficient, simple, and cost-effective approach for synthesizing shape-controlled silver nanoparticles (AgNPs) embedded in the subsurface layer of single-crystal silicon (c-Si), as well as nanopits in c-Si. The synthesis is based on a galvanic displacement reaction in an aqueous AgNO<span><math><msub><mrow></mrow><mrow><mn>3</mn></mrow></msub></math></span>:HF solution, followed by high-temperature annealing at 1100 °C in a pure water vapor for 180 min. The optical properties of the AgNPs embedded in c-Si were investigated by dark-field spectroscopy under p- and s-polarized illumination. The positions of the localized plasmon resonances were determined from the corresponding scattering spectra. The enhancement factors (EFs) of AgNPs and empty nanopits in silicon were evaluated using the finite element method as a function of their shape, period, and size, taking into account the dispersion of permittivity. AgNPs embedded in silicon exhibited numerical EFs of the order of <span><math><mrow><mn>1</mn><msup><mrow><mn>0</mn></mrow><mrow><mn>7</mn></mrow></msup></mrow></math></span>–<span><math><mrow><mn>1</mn><msup><mrow><mn>0</mn></mrow><mrow><mn>9</mn></mrow></msup></mrow></math></span>, while empty nanopits showed EFs of <span><math><mrow><mn>1</mn><msup><mrow><mn>0</mn></mrow><mrow><mn>2</mn></mrow></msup></mrow></math></span>–<span><math><mrow><mn>1</mn><msup><mrow><mn>0</mn></mrow><mrow><mn>4</mn></mrow></msup></mrow></math></span>. The functionality of these structures as surface-enhanced Raman scattering (SERS) substrates was investigated using an aqueous solution of the triphenylmethane brilliant green (BG) dye, a genotoxic and carcinogenic analyte. The limit of detection for BG concentration and the corresponding EFs were found to be 0.1 <span><math><mi>μ</mi></math></span>M and <span><math><mrow><mn>4</mn><mo>.</mo><mn>3</mn><mo>×</mo><mn>1</mn><msup><mrow><mn>0</mn></mrow><mrow><mn>5</mn></mrow></msup></mrow></math></span> for the initial Ag island film, 10 pM and <span><math><mrow><mo>∼</mo><mn>1</mn><msup><mrow><mn>0</mn></mrow><mrow><mn>7</mn></mrow></msup></mrow></math></span> for AgNPs embedded in c-Si, and 1 <span><math><mi>μ</mi></math></span>M and <span><math><mrow><mo>∼</mo><mn>1</mn><msup><mrow><mn>0</mn></mrow><mrow><mn>2</mn></mrow></msup></mrow></math></span> for empty nanopits in c-Si, respectively. Thus, AgNPs embedded in silicon show high sensitivity, making them promising candidates for future sensing technologies.</div></div>","PeriodicalId":18240,"journal":{"name":"Materials Science in Semiconductor Processing","volume":"207 ","pages":"Article 110462"},"PeriodicalIF":4.6,"publicationDate":"2026-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"146081212","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"DMSO-tailored microstructure engineering of melt-extruded PFSIE membranes for efficient chlor-alkali electrolysis","authors":"Jianlong Lei ,&nbsp;Libin Qian ,&nbsp;Panpan Guan ,&nbsp;Guixue Liang ,&nbsp;Nan Wang ,&nbsp;Yuan Li ,&nbsp;Qipeng Guo","doi":"10.1016/j.mssp.2026.110472","DOIUrl":"10.1016/j.mssp.2026.110472","url":null,"abstract":"<div><div>Perfluorosulfonic acid ion-exchange membranes (PFSIEMs) act as core components in chlor-alkali electrolysis, but the inadequate microstructure control of melt-extruded Na-type PFSIEMs remains a critical bottleneck restricting their performance. Herein, we propose a DMSO-assisted microstructure regulation strategy through direct melt-extrusion of perfluorosulfonyl fluoride precursors, which allows for precise modulation of membrane microstructures while notably boosting hydrolysis efficiency. Structural characterizations indicate that the optimized membranes feature reduced crystallinity, enhanced orderliness of ion channels with narrowed spacing, and an increased free volume fraction. These microstructural improvements result in remarkable performance enhancements, the parallel-to-draw and perpendicular-to-draw conductivities of the best-performing membrane are increased by 79.5% and 43.0% respectively, the NaCl permeability coefficient is improved by 223.7%, and the energy consumption for producing one ton of NaOH is reduced by 149.4 kWh/t compared to the pristine P-Na-0% membrane. This study provides a universal design framework for tailoring PFSIEMs to diverse application scenarios, where specific performance requirements can be precisely met through controlled microstructure modulation.</div></div>","PeriodicalId":18240,"journal":{"name":"Materials Science in Semiconductor Processing","volume":"207 ","pages":"Article 110472"},"PeriodicalIF":4.6,"publicationDate":"2026-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"146189796","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Defect engineering with group III dopants in 2D monolayer SiC for improved electronic devices","authors":"Emmanuel Igumbor ,&nbsp;Patience Ajeh ,&nbsp;Edwin Mapasha ,&nbsp;Ezekiel Omotoso ,&nbsp;Abdulrafiu Raji","doi":"10.1016/j.mssp.2026.110465","DOIUrl":"10.1016/j.mssp.2026.110465","url":null,"abstract":"<div><div>Point defects in 2D monolayer SiC have played important roles in enhancing its performance for high-power electronic applications. Despite the fact that several point defects in 2D monolayer SiC have been reported, the impact of group III dopants has not been well understood. In this study, we employed hybrid density functional theory to investigate group III dopants (B, Al, Ga, In, and Tl) in 2D monolayer SiC. The B<span><math><msub><mrow></mrow><mrow><mi>C</mi></mrow></msub></math></span> is the most energetically favorable, whereas Tl<span><math><msub><mrow></mrow><mrow><mi>C</mi></mrow></msub></math></span> is the least favorable. At low temperature, the B<span><math><msub><mrow></mrow><mrow><mi>C</mi></mrow></msub></math></span> exhibits high concentration, and the B<span><math><msub><mrow></mrow><mrow><mi>Si</mi></mrow></msub></math></span> exhibits negligible concentration. The Ga<span><math><msub><mrow></mrow><mrow><mi>Si</mi></mrow></msub></math></span> shows relatively low concentrations at 250–300 K and technologically significant levels at high temperature. The Ga<span><math><msub><mrow></mrow><mrow><mi>C</mi></mrow></msub></math></span> is increasingly relevant at high temperatures and the Tl<span><math><msub><mrow></mrow><mrow><mi>C</mi></mrow></msub></math></span> and Tl<span><math><msub><mrow></mrow><mrow><mi>Si</mi></mrow></msub></math></span> show vanishingly small concentrations up to <span><math><mrow><mo>∼</mo><mn>800</mn></mrow></math></span> K, with only minor activation at high temperature. Group III dopants substituted at the C-sites generally induce mid-gap states, with their Fermi levels located near the middle of the band gap. In contrast, when substituted at the Si sites, these dopants do not induce mid-gap states. Instead, the dopant-induced states close to the Fermi level, leading to <span><math><mi>p</mi></math></span>-type behavior. Moreover, C-site substitution often induces local magnetic moments and breaks spin symmetry between the spin-up and spin-down states, whereas Si-site substitution result in symmetric, non-magnetic behavior. This study provides theoretical insights into the potential use of group III dopants in 2D monolayer SiC as a means to modify its electronic and magnetic properties for applications in nano- and microelectronic devices that can operate in high-temperature and harsh environments.</div></div>","PeriodicalId":18240,"journal":{"name":"Materials Science in Semiconductor Processing","volume":"207 ","pages":"Article 110465"},"PeriodicalIF":4.6,"publicationDate":"2026-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"146189799","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Ultrafast laser micro-welding of glass to SiC: Microstructure, mechanical and impermeable properties","authors":"Ming Wu ,&nbsp;Jin Yang ,&nbsp;Tao Zhang ,&nbsp;Yixuan Zhao ,&nbsp;Xiang Zhang ,&nbsp;Qing Jiang ,&nbsp;Jianian Tian ,&nbsp;Meng Yang ,&nbsp;Tao Zhang ,&nbsp;Peng Li","doi":"10.1016/j.mssp.2026.110473","DOIUrl":"10.1016/j.mssp.2026.110473","url":null,"abstract":"<div><div>Ultrafast laser micro-welding was used for the high-efficient and high-quality joining of aluminosilicate glass (AS) and SiC, whose reliable packaging was of importance in Micro-Electro-Mechanical Systems (MEMS). By using the orthogonal test method, the process parameters were optimized, which were single pulse energy of 30 μJ, scanning speed of 10 mm/s, and the scanning pattern of filling grid inside circle. Under these conditions, the joint achieved a maximum shear strength of 33.1 MPa. Microstructural analysis revealed an evident elemental mixture layer with a thickness of 1.4 μm at the interface, indicating strong material intermixing and elemental diffusion under ultrafast laser irradiation. In addition, the joint permeability was assessed by waterproofing evaluations, revealing that the joints exhibit outstanding impermeable properties, which met the IPX7 waterproof standard (immersion in 1 m of water for 30 min) for enclosure packaging in practical applications. Furthermore, the temperature field simulation results showed that the temperature generated by the laser irradiation during the welding process exceeded the softening temperature and melting point of the base material. The joint formation mechanism was also discussed. This work provides theoretical guidance for the ultrafast laser impermeability of transparent materials with SiC, holding significant potential in applications like semiconductor packaging and MEMS fabrication.</div></div>","PeriodicalId":18240,"journal":{"name":"Materials Science in Semiconductor Processing","volume":"207 ","pages":"Article 110473"},"PeriodicalIF":4.6,"publicationDate":"2026-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"146190697","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"2 kV normally-off recessed p-NiO gate GaN-based HEMTs fabricated using “buffer-free” AlGaN/GaN heterostructures on SiC substrates","authors":"Justyna Wierzbicka ,&nbsp;Wojciech Hendzelek ,&nbsp;Maciej Kamiński ,&nbsp;Jarosław Tarenko ,&nbsp;Joanna Jankowska-Śliwińska ,&nbsp;Aleksandra Wójcicka ,&nbsp;Oskar Sadowski ,&nbsp;Aneta Gołębiowska ,&nbsp;Krzysztof Urbanowski ,&nbsp;Veronica Gao Zhan ,&nbsp;Anna Szerling ,&nbsp;Andrzej Taube","doi":"10.1016/j.mssp.2025.110385","DOIUrl":"10.1016/j.mssp.2025.110385","url":null,"abstract":"<div><div>The usage of p-NiO-based gate architecture can be beneficial over conventionally used p-GaN gate structure in the construction of normally-off GaN-based high electron mobility transistors, due to simpler, cost-effective and low-thermal budget fabrication process flow. Here in this work we report normally-off recessed p-NiO gate GaN-based HEMTs fabricated on \"buffer-free\" AlGaN/GaN heterostructure on 4H-SiC substrate. By using 17 nm recess p-NiO gate structure, appropriate post-deposition annealing and passivation scheme high positive threshold +0.8V (+0.2 V), high drain output current over 0.7 A/mm and low subthreshold swing 80 mV/dec and on-state resistance 10 Ωmm were obtained simultaneously. Thanks to the use of a high-quality heterostructure on a semi-insulating substrate and the absence of substrate leakage current, normally-off devices with high breakdown voltage values of up to 2 kV for a gate-drain distance of 20 μm were achieved, which corresponds to an average breakdown field value of 1 MV/cm, without the use of additional field-plate termination structures.</div></div>","PeriodicalId":18240,"journal":{"name":"Materials Science in Semiconductor Processing","volume":"206 ","pages":"Article 110385"},"PeriodicalIF":4.6,"publicationDate":"2026-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145940940","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}