Materials Science in Semiconductor Processing最新文献

{"title":"Semiconducting biomass-based amorphous carbon films and their potential application in photovoltaic devices","authors":"Endhah Purwandari ,&nbsp;Retno Asih ,&nbsp;Sudarsono ,&nbsp;Diky Anggoro ,&nbsp;Budhi Priyanto ,&nbsp;Gerald Ensang Timuda ,&nbsp;Malik Anjelh Baqiya ,&nbsp;Iman Santoso ,&nbsp;Hideki Nakajima ,&nbsp;Muhammad Mahyiddin Ramli ,&nbsp;Agus Subekti ,&nbsp;Darminto","doi":"10.1016/j.mssp.2024.109122","DOIUrl":"10.1016/j.mssp.2024.109122","url":null,"abstract":"<div><div>Amorphous carbon (<em>aC</em>) is highly appealing because of its unique structure, electrical and optical properties, making it appropriate for various applications, especially in energy conversion. This work presents a comprehensive study on the synthesis of <em>aC</em> materials, including both intrinsic (i-type) and doped conditions (p- and n-type), to enhance the performance of photovoltaic films. Carbon materials are derived from biomass using a straightforward and environmentally conscious technique. The obtained carbon compound demonstrates an amorphous state with a substantial prevalence of the <em>sp</em>² C=C component. Raman spectroscopy and electron microscopy confirmed the stacking of 2D layers forming a multilayer graphene structure. The carbon compound prepared <em>AC</em> films deposited onto a quartz glass surface via spray coating. The films have a thickness ranging from 247 to 478 nm. The dielectric constants of the optical parameters reveal resonant exciton features at a photon energy of ∼3.8 eV, whereas the real component exhibits semiconductive properties. The refractive indices of the p-, i-, and n-layers, which have gap energies in decreasing order, demonstrate a decline. The optical conductivity of <em>aC</em> is higher than that of amorphous silicon, specifically 0.54 × 10³Ω⁻¹cm⁻¹, 0.48 × 10³ Ω⁻¹cm⁻¹, and 0.53 × 10³ Ω⁻¹cm⁻¹ for the p-, i-, and n-type films, respectively. Based on this outcome, it is reasonable to suggest that the recently developed material is potentially important as a photovoltaic device.</div></div>","PeriodicalId":18240,"journal":{"name":"Materials Science in Semiconductor Processing","volume":"187 ","pages":"Article 109122"},"PeriodicalIF":4.2,"publicationDate":"2024-11-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142705356","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Impact of porous silicon thickness on thermoelectric properties of silicon-germanium alloy films produced by electrochemical deposition of germanium into porous silicon matrices followed by rapid thermal annealing","authors":"Nikita Grevtsov ,&nbsp;Eugene Chubenko ,&nbsp;Ilya Gavrilin ,&nbsp;Dmitry Goroshko ,&nbsp;Olga Goroshko ,&nbsp;Ilia Tsiniaikin ,&nbsp;Vitaly Bondarenko ,&nbsp;Maksim Murtazin ,&nbsp;Alexey Dronov ,&nbsp;Sergey Gavrilov","doi":"10.1016/j.mssp.2024.109148","DOIUrl":"10.1016/j.mssp.2024.109148","url":null,"abstract":"<div><div>Silicon-germanium alloy films were formed by electrochemical deposition of germanium into porous silicon matrices with thicknesses varying from 1.5 to 10 μm followed by subsequent rapid thermal processing at 950 °C in an inert atmosphere. Study of the fabricated structures using SEM and Raman spectroscopy, as well as measurements of their electrical conductivity and thermoelectric properties revealed that the highest Seebeck coefficient (−505 μV/K at 450 K) and Power Factor (1950 μW/(m·K²) at 400 K) values were obtained when a 5 μm-thick porous silicon was used as a structural matrix. Under such conditions, an optimal balance between electrical conductivity, structural disorder and electrical insulation from the substrate is achieved due to the presence of a residual porous underlayer, making it possible to maximize the film's thermoelectric performance. The obtained silicon-germanium alloy films are deemed suitable for the fabrication of both discrete and integrated thermoelectric devices based on monocrystalline silicon substrates.</div></div>","PeriodicalId":18240,"journal":{"name":"Materials Science in Semiconductor Processing","volume":"187 ","pages":"Article 109148"},"PeriodicalIF":4.2,"publicationDate":"2024-11-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142705271","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Exploring the influence of end-capped moieties on the photovoltaic properties of thiazolo [5,4-d] thiazole based compounds: DFT/TD-DFT approaches","authors":"Mashal Khan ,&nbsp;Sidra Akram ,&nbsp;Iqra Shafiq ,&nbsp;Saifullah Bullo ,&nbsp;Saad M. Alshehri ,&nbsp;Suvash Chandra Ojha","doi":"10.1016/j.mssp.2024.109126","DOIUrl":"10.1016/j.mssp.2024.109126","url":null,"abstract":"<div><div>Non-fullerene acceptors-based organic solar cells (NFA-OSCs) with unfused central cores retain significant optoelectronic features in recent years. Herein, eight new derivatives (<strong>TCTD1</strong>–<strong>TCTD8</strong>) were designed from <strong>TCTR</strong> reference to enlighten their photovoltaic and optoelectronic properties. The structural modulation of <strong>TCTR</strong> is performed at its both terminal ends with different unique benzothiophene based acceptors. Following this, the DFT/TD-DFT methods were accomplished to perform various analyses such as frontier molecular orbitals (FMOs), density of states (DOS), UV–Vis spectra, transition density matrix (TDM), binding energy (E_b), open circuit voltage (<em>V</em>_<em>oc</em>) and hole-electron investigations. The findings of FMOs and UV–Vis revealed that the newly designed compounds showed comparable band gaps (2.13–2.32 eV) with bathochromic shifts in both the chloroform solvent (702.30–753.06 nm) and gas phase (655.72–695.84 nm) as compared to <strong>TCTR</strong> (2.29 eV, 715.26 and 668.52 nm, respectively). The TDM, DOS and hole-electron plots represented the good charge transfer (CT) and exciton dissociation in all the derivatives. Their <em>V</em>_oc was calculated <em>via</em> the donor polymer (<strong>PBDB-T</strong>) and significant results were obtained (1.34–1.67 V). Among all the afore-mentioned derivatives, <strong>TCTD7</strong> exhibited the least band gap (2.13 eV), highest <em>λ_max</em> (753.06 and 695.84 nm in chloroform solvent and gas, accordingly) and E_b (0.49 eV) values. These results illustrated the greater rate of exciton dissociation which led towards efficient photovoltaic response in the compound (<strong>TCTD7</strong>). The theoretical study marked the unique properties of newly designed unfused NFAs which aid the experimentalists in their utilization for synthesizing efficient photovoltaic materials.</div></div>","PeriodicalId":18240,"journal":{"name":"Materials Science in Semiconductor Processing","volume":"187 ","pages":"Article 109126"},"PeriodicalIF":4.2,"publicationDate":"2024-11-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142705270","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"A comprehensive analysis of the structural, phonon, electronic, mechanical, optical, and thermophysical properties of cubic Ca3SbX3 (X = Cl, Br): DFT - GGA and mBJ studies","authors":"Heider A. Abdulhussein ,&nbsp;Md Adil Hossain ,&nbsp;Asif Hosen ,&nbsp;Diana Dahliah ,&nbsp;Mohammed S. Abu-Jafar ,&nbsp;Amine Harbi ,&nbsp;Redi Kristian Pingak ,&nbsp;M. Moutaabbid ,&nbsp;Istiak Ahmed Ovi ,&nbsp;Md Riazul Islam ,&nbsp;Md Kaab Bin Hossen","doi":"10.1016/j.mssp.2024.109133","DOIUrl":"10.1016/j.mssp.2024.109133","url":null,"abstract":"<div><div>The current investigation employed first-principles calculation to assess the structural, phonon, mechanical, electronic, optical, thermodynamic, and thermoelectric properties of lead-free cubic Ca₃SbX₃ (X = Cl, Br). The dynamic stability of both compounds is assessed by analyzing the phonon dispersion spectrum. The distance between atoms is significantly reduced, leading to a large drop in the bond length, cell volume, and lattice constant of Ca₃SbX₃ (X = Cl, Br) compounds upon applying pressure. Ca₃SbCl₃ and Ca₃SbBr₃ compounds have direct bandgaps (Γ-Γ) of 2.57 and 2.27 eV via mBJ functional and 1.82 and 1.34 eV via GGA functional at 0 GPa pressure. Additionally, the bandgaps of Ca₃SbCl₃ and Ca₃SbBr₃ decrease to 1.65 eV and 1.45 eV, respectively, when accounting for the quantum effects of spin-orbit coupling (SOC). As the level of pressure rises to 30 GPa, Ca₃SbCl₃ and Ca₃SbBr₃ compound's band gaps reduce to 0.89 and 0.65 eV via mBJ functional and 0.27 and 0.12 via GGA functional. Increasing pressure is shown to reduce the effective mass, thereby enhancing the conductivity of both types of charge carriers. The reduced recombination rate signifies both compounds' greater absorption capabilities, making them more suitable for solar absorbers. The analysis of the mechanical properties indicates that as pressure increases, the elastic moduli rise, and the material transitions from being brittle to becoming more ductile. Additionally, both materials show a redshift of absorption and optical conductivity with improved dielectric constants at high pressure owing to the alteration in the bandgap, which is more appropriate for surgical instruments and solar absorbers. Thermodynamic properties show their temperature tolerance and appropriateness for high temperatures. Lastly, their thermoelectric property evaluation indicates high PF and near unity ZT, suggesting their use in thermoelectric devices.</div></div>","PeriodicalId":18240,"journal":{"name":"Materials Science in Semiconductor Processing","volume":"187 ","pages":"Article 109133"},"PeriodicalIF":4.2,"publicationDate":"2024-11-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142705268","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Comparison of different α-Fe2O3 sources in the enhancement of ZnO photocatalytic activity during the degradation of a mixture of endocrine-disruptors","authors":"Pedro César Quero-Jiménez ,&nbsp;Aracely Hernández-Ramírez ,&nbsp;Jorge Luis Guzmán-Mar ,&nbsp;David Avellaneda Avellaneda ,&nbsp;Laura Hinojosa-Reyes","doi":"10.1016/j.mssp.2024.109125","DOIUrl":"10.1016/j.mssp.2024.109125","url":null,"abstract":"<div><div>α-Fe₂O₃/ZnO composites were synthesized using MOF235(Fe), NH₂–MOF235(Fe), and FeOOH as α-Fe₂O₃ precursors via microwave-assisted precipitation and post-calcination at 450 °C. Thermogravimetric analyses (TGA), X-ray powder diffraction (XRD), Fourier-transform infrared spectroscopy (FTIR), N₂ physisorption analysis, scanning electron microscopy using a fully integrated EDS detector (SEM–EDS), X-ray photoelectron spectroscopy (XPS), and electrochemical experiments were employed to characterize the prepared materials. The coupling of MOF235(Fe)-, NH₂–MOF235(Fe)-, and FeOOH-derived α-Fe₂O₃ into ZnO increased the specific surface area values and light absorption in the visible region of ZnO. The NH₂–MOF235(Fe)-derived α-Fe₂O₃/ZnO allowed enhanced photogenerated charge separation with retarded <em>e</em>^<em>−</em><em>/h</em>^<em>+</em> recombination rate and reduced charge-transfer resistance, promoting superior photocatalytic activity. The photocatalytic activity of α-Fe₂O₃/ZnO composites was evaluated in the degradation of bisphenol A, 4-<em>tert</em>-butylphenol, and 4-<em>tert</em>-octylphenol mixture solution at pH 7.0 under simulated solar light using 0.5 g L⁻¹ catalyst loading. The mineralization percentages of endocrine-disrupting compounds (EDCs) of 36.76%, 42.25%, and 19.92% occurred in 330 min (600 kJ m⁻² of accumulated energy) for MOF235(Fe)-, NH₂–MOF235(Fe)-, and FeOOH-derived α-Fe₂O₃/ZnO, respectively. The QSAR approach using the ECOSAR program to evaluate the acute toxicity of the by-products generated with the NH₂–MOF235(Fe)_α-Fe₂O₃/ZnO photocatalyst showed that the effluent was nontoxic for the three target trophic models (fish, <em>Daphnia</em>, and green algae). This result was consistent with those of the <em>Vibrio fischeri</em> bioluminescence inhibition assay, where the effluents using NH₂–MOF235(Fe)_α-Fe₂O₃/ZnO were classified as nontoxic. Thus, NH₂–MOF235(Fe) can be successfully used as an α-Fe₂O₃ precursor to generate an α-Fe₂O₃/ZnO composite, which is a promising material for removing EDCs from aqueous solutions.</div></div>","PeriodicalId":18240,"journal":{"name":"Materials Science in Semiconductor Processing","volume":"187 ","pages":"Article 109125"},"PeriodicalIF":4.2,"publicationDate":"2024-11-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142706014","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Thermoluminescence behaviour and kinetic analysis of a novel Tb³⁺-Doped LaCa₄O(BO₃)₃ phosphor: Impacts of heating rates and dose","authors":"O. Madkhali ,&nbsp;K. Bulcar ,&nbsp;A. Barad ,&nbsp;T. Zelai ,&nbsp;G. Souadi ,&nbsp;Hussain J. Alathlawi ,&nbsp;U.H. Kaynar ,&nbsp;M. Topaksu ,&nbsp;N. Can","doi":"10.1016/j.mssp.2024.109132","DOIUrl":"10.1016/j.mssp.2024.109132","url":null,"abstract":"<div><div>This study employs kinetic analysis methods to comprehensively understand the thermoluminescence (TL) behaviour of Tb³⁺-doped <em>LaCa₄O(BO₃)₃</em> (<em>LACOB</em>), applying the Hoogenstraaten and Booth-Bohun-Parfianovitch methods, as well as the T_m-T_stop and Glow Curve Deconvolution (GCD) techniques. Optimal TL intensity was found at a Tb³⁺ concentration of 2 wt%, beyond which concentration quenching occurred. The complete TL glow curve before preheating displays two peaks at approximately 70 °C and 286 °C. After preheating, only the 286 °C peak remains, due to its greater stability and intensity, making it the primary TL peak relevant for dosimetric applications. As the heating rate increased, the TL glow peaks shifted to higher temperatures and exhibited reduced intensity due to thermal quenching. The TL intensity exhibited superlinear behaviour at lower doses (0.5–20 Gy), followed by nearly linear behaviour at intermediate doses (30–100 Gy), and sublinear behaviour at higher doses. Anomalous fading of the TL signal was observed in LACOB:2 wt%Tb, suggesting competition with radiationless transitions. Activation energy values derived from Hoogenstraaten and Booth-Bohun-Parfianovitch methods showed close alignment, supporting the reliability of the kinetic analysis. The <em>T</em>_<em>m</em><em>-T</em>_{<em>stop</em>} and GCD analyses with preheating identified four distinct TL glow peaks, with activation energies between 1.72 and 1.82 eV. Analysis whole glow curve revealed nine TL glow peaks overall, ranging from 1.08 to 1.82 eV, reflecting a complex trap structure with continuous energy distributions. The GCD method yielded a Figure of Merit (FOM) of 2.67 % with preheating and 2.84 without preheating, indicating a strong fit between experimental and theoretical data in both cases. The material demonstrated excellent stability and reusability, making it a strong candidate for dosimetric applications.</div></div>","PeriodicalId":18240,"journal":{"name":"Materials Science in Semiconductor Processing","volume":"187 ","pages":"Article 109132"},"PeriodicalIF":4.2,"publicationDate":"2024-11-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142705269","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Unveiling the abnormal response behavior of AlGaN-based high electron mobility transistors (HEMTs) under ultraviolet light illumination","authors":"Mukta Sharma ,&nbsp;Chia-Lung Tsai ,&nbsp;S.N. Manjunatha ,&nbsp;Yu-Li Hsieh ,&nbsp;Atanu Das ,&nbsp;Kuan-Ying Lee ,&nbsp;Sun-Chien Ko ,&nbsp;Shiang-Fu Huang ,&nbsp;Liann-Be Chang ,&nbsp;Meng-Chyi Wu","doi":"10.1016/j.mssp.2024.109134","DOIUrl":"10.1016/j.mssp.2024.109134","url":null,"abstract":"<div><div>This study examines the dual functionality of AlGaN/GaN HEMTs as both power transistors and UV photodetectors, motivated by manipulating the bias dependent photoresponse and to perform both functions using AlGaN/GaN HEMT configuration seamlessly. The fabricated HEMTs achieve good electrical performance, with a maximum drain current I_DS of 547 mA/mm and an ON-to-OFF current ratio (I_ON/I_OFF) of 1.2 × 10⁷, with a threshold voltage of −3.9 V. The device demonstrated a peak responsivity of 758.4 A/W at 360 nm with an optical gain of 2617 under forward bias. When biased between −4.6 V &lt; V_GS &lt; V_th and V_DS = +3 V, UV illumination significantly increases the 2DEG channel conductivity, resulting in enhanced electron transport and high responsivity. However, as V_GS increases, dark current rises, limiting the gain improvement. Additionally, the proposed AlGaN HEMTs showed a UV sensing performance with a linear dynamic range (LDR) of 65.4 dB, indicating potential for UV detection applications. Furthermore, these devices can also operate in reverse conduction (third quadrant), achieving 220.7 A/W when V_DS &lt; 0 V and V_GS + V_SD &gt; V_th. Applying a higher drain-source voltage further boosts responsivity by strengthening the lateral electric field, but only if dark current remains low. Finally, the HEMTs detect optical pulses at 550 Hz with response times of 641 μs and 776 μs (τ_r/τ_f). These capabilities allow the device to function as both a power signal driver and an optical detector without structural modifications, making it a versatile option for multifunctional applications.</div></div>","PeriodicalId":18240,"journal":{"name":"Materials Science in Semiconductor Processing","volume":"187 ","pages":"Article 109134"},"PeriodicalIF":4.2,"publicationDate":"2024-11-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142706010","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Influence of nitridation time on growth of AlN layers on different sapphire substrate off-cut angles","authors":"Noratiqah Yusop ,&nbsp;Yusnizam Yusuf ,&nbsp;Muhammad Esmed Alif Samsudin ,&nbsp;Nor Syafiqah Azmi ,&nbsp;Mohd Anas Ahmad ,&nbsp;Narong Chanlek ,&nbsp;Norzaini Zainal","doi":"10.1016/j.mssp.2024.109130","DOIUrl":"10.1016/j.mssp.2024.109130","url":null,"abstract":"<div><div>This work describes the role of nitridation time and off-cut angles of sapphire in improving growth of AlN layers. It was found that the nitridation formed AlON layer, of which this layer can be useful for improving the atomic arrangement of overgrown AlN layers. Based on FHWMs of XRD-rocking curve (XRC-FWHMs), the TDD decreases with increasing nitridation time up to 20 min, especially for the AlN layer grown on 0.5° off-cut sapphire. Meanwhile, as revealed by N1s XPS spectra, prolonged nitridation tends to destroy the AlON layer, thereby increasing the TDD. In general, the impact of the sapphire off-cut angles on the TDD reduction is insignificant, especially with longer nitridation. Moreover, the surface roughness of the AlN layers can be reduced by increasing nitridation time, including the ones grown on 3.0° off-cut sapphire. It is worth noting that macro-steps typically observed on the surface of AlN on higher off-cut angles of sapphire are less evident in this work. This indicates that the initiation of macro-steps or step-bunching can be suppressed by nitridation. However, this limits the TDs inclination which is also an essential in reducing the TDD.</div></div>","PeriodicalId":18240,"journal":{"name":"Materials Science in Semiconductor Processing","volume":"187 ","pages":"Article 109130"},"PeriodicalIF":4.2,"publicationDate":"2024-11-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142706012","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Raman activity, piezoelectric response, and carrier mobility in two-dimensional Janus TiGeZ3H (Z= N, P, As) semiconductors: A first-principles prediction","authors":"A.I. Kartamyshev ,&nbsp;Nguyen N. Hieu ,&nbsp;N.A. Poklonski ,&nbsp;Nguyen V. Hieu ,&nbsp;Tuan V. Vu ,&nbsp;A.A. Lavrentyev ,&nbsp;Huynh V. Phuc","doi":"10.1016/j.mssp.2024.109102","DOIUrl":"10.1016/j.mssp.2024.109102","url":null,"abstract":"<div><div>In this article, we theoretically propose a series of TiGe<span><math><msub><mrow><mi>Z</mi></mrow><mrow><mn>3</mn></mrow></msub></math></span>H (<span><math><mrow><mi>Z</mi><mo>=</mo></mrow></math></span> N, P, As) monolayers and comprehensively investigate their structural, vibrational, piezoelectric, electronic, and transport properties using first-principles simulations. The structural stability of the suggested monolayers is verified by phonon dispersion analysis, <em>ab-initio</em> molecular dynamics calculations, and Born–Huang mechanical stability criteria. Based on the calculations for the mechanical response, it is shown that TiGeN<span><math><msub><mrow></mrow><mrow><mn>3</mn></mrow></msub></math></span>H is the stiffest material compared to the other two structures with Young’s modulus found to be 252.11 Nm⁻¹. Besides, we also examine the vibrational characteristics of TiGe<span><math><msub><mrow><mi>Z</mi></mrow><mrow><mn>3</mn></mrow></msub></math></span>H through the analysis of their phonon spectra and Raman active modes. Due to the broken vertical mirror symmetry, TiGe<span><math><msub><mrow><mi>Z</mi></mrow><mrow><mn>3</mn></mrow></msub></math></span>H monolayers possess both out-of-plane and in-plane piezoelectric responses, in particular, the out-of-plane piezoelectric coefficient of TiGeAs<span><math><msub><mrow></mrow><mrow><mn>3</mn></mrow></msub></math></span>H is computed to be up to <span><math><mrow><mo>−</mo><mn>0</mn><mo>.</mo><mn>42</mn></mrow></math></span> pm/V. Janus TiGe<span><math><msub><mrow><mi>Z</mi></mrow><mrow><mn>3</mn></mrow></msub></math></span>H monolayers are found to be indirect semiconductors with decreasing bandgap as <span><math><mi>Z</mi></math></span> changes from N to As. Particularly, the Rashba spin splitting is found in TiGeAs<span><math><msub><mrow></mrow><mrow><mn>3</mn></mrow></msub></math></span>H when the spin–orbit coupling is taken into account. The calculations for the transport features indicate that while TiGeN<span><math><msub><mrow></mrow><mrow><mn>3</mn></mrow></msub></math></span>H monolayer exhibits low electron mobility, both TiGeP<span><math><msub><mrow></mrow><mrow><mn>3</mn></mrow></msub></math></span>H and TiGeAs<span><math><msub><mrow></mrow><mrow><mn>3</mn></mrow></msub></math></span>H have electron mobility <span><math><msub><mrow><mi>μ</mi></mrow><mrow><mi>x</mi></mrow></msub></math></span> over 400 cm<span><math><msup><mrow></mrow><mrow><mn>2</mn></mrow></msup></math></span>V⁻¹s⁻¹, which is suitable for applications in electronics.</div></div>","PeriodicalId":18240,"journal":{"name":"Materials Science in Semiconductor Processing","volume":"187 ","pages":"Article 109102"},"PeriodicalIF":4.2,"publicationDate":"2024-11-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142706013","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Effect of 5 MeV proton irradiation on electrical and trap characteristics of β-Ga2O3 power diode","authors":"Haolan Qu ,&nbsp;Wei Huang ,&nbsp;Yu Zhang ,&nbsp;Jin Sui ,&nbsp;Ge Yang ,&nbsp;Jiaxiang Chen ,&nbsp;David Wei Zhang ,&nbsp;Yuangang Wang ,&nbsp;Yuanjie Lv ,&nbsp;Zhihong Feng ,&nbsp;Xinbo Zou","doi":"10.1016/j.mssp.2024.109121","DOIUrl":"10.1016/j.mssp.2024.109121","url":null,"abstract":"<div><div>In this study, impact of 5 MeV proton irradiation with radiation fluence of 10¹³ cm⁻² on <em>β</em>-Ga₂O₃ power diode is investigated by a <em>β</em>-Ga₂O₃ Schottky barrier diode (SBD). Via temperature-dependent measurements, carrier removal rate <em>R</em>_<em>C</em> is determined to be 7.26 × 10² cm⁻¹ at 300 K. Meanwhile, the threshold voltage (<em>V</em>_<em>on</em>) and ideality factor (<em>n</em>) almost remain stable after proton irradiation. A close-to-unity <em>n</em> was observed for a wide temperature range indicating near-ideal Schottky characteristics. Dynamic degradation was observed at 300K, but was greatly suppressed at a low temperature of 100K. Meanwhile, two more bulk traps are discovered in proton irradiated <em>β</em>-Ga₂O₃ SBD by deep-level transient spectroscopy (DLTS). The larger corrected trap concentration (<em>N</em>_<em>Ta</em>) in proton irradiated <em>β</em>-Ga₂O₃ SBD was regarded as the reason behind slightly worsened dynamic on-resistance instability at 300 K. Furthermore, lower low frequency noise is revealed for proton irradiated device at room temperature and cryogenic temperature. The study demonstrates the competitive irradiation hardness of <em>β</em>-Ga₂O₃ power diodes and paves a solid path for the deployment of <em>β</em>-Ga₂O₃ in space.</div></div>","PeriodicalId":18240,"journal":{"name":"Materials Science in Semiconductor Processing","volume":"187 ","pages":"Article 109121"},"PeriodicalIF":4.2,"publicationDate":"2024-11-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142705355","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}