Materials Science in Semiconductor Processing最新文献_第4页

Numerical and experimental investigation of CdTe crystal growth assisted by a thermal–shielding ring for stable interface control 热屏蔽环辅助CdTe晶体生长的数值与实验研究

IF 4.6 3区工程技术

Materials Science in Semiconductor Processing Pub Date : 2025-09-14 DOI: 10.1016/j.mssp.2025.110059

Zhicheng Zhu , Youbao Ni , Xuezhou Yu , Changbao Huang , Haixin Wu , Qianqian Hu , Huabei Qi , Ya Li , Guojin Liu , Ping Yu , Weihao Chen , Qingli Zhang

{"title":"Numerical and experimental investigation of CdTe crystal growth assisted by a thermal–shielding ring for stable interface control","authors":"Zhicheng Zhu , Youbao Ni , Xuezhou Yu , Changbao Huang , Haixin Wu , Qianqian Hu , Huabei Qi , Ya Li , Guojin Liu , Ping Yu , Weihao Chen , Qingli Zhang","doi":"10.1016/j.mssp.2025.110059","DOIUrl":"10.1016/j.mssp.2025.110059","url":null,"abstract":"<div><div>Cadmium telluride (CdTe) has been widely applied in nuclear radiation detection and infrared optoelectronics. However, twins and grain boundaries formed during growth remain a critical limitation for large–scale application, due to their impact on crystal yield and production cost. In this study, we present a simple and effective approach to stabilize a slightly convex solid–liquid interface by introducing a thermal–shielding ring (TS–ring) into the thermal gradient zone of a Vertical Bridgman furnace. Numerical simulations were conducted to optimize the TS–ring geometry, and crystal growth experiments were performed for validation. The resulting CdTe single crystal exhibited large volumes free of twins and grain boundaries. X–ray rocking curve revealed the full width at half maximum of the as–grown CdTe crystal is around 0.05°. Infrared transmittance reached 65 %–68 %, the etch pit density was below 3 × 10<sup>4</sup> cm<sup>−2</sup>, and the resistivity reached 4.3 × 10<sup>7</sup> Ω cm. These results demonstrate that stabilizing a slightly convex interface via the TS–ring is an effective strategy for improving the quality and yield of CdTe single crystals.</div></div>","PeriodicalId":18240,"journal":{"name":"Materials Science in Semiconductor Processing","volume":"201 ","pages":"Article 110059"},"PeriodicalIF":4.6,"publicationDate":"2025-09-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145057268","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Investigation of gate metal effects on barrier lowering, on-resistance, and breakdown voltage in p-GaN gate HEMTs 栅极金属对p-GaN栅极hemt势垒降低、导通电阻和击穿电压影响的研究

IF 4.6 3区工程技术

Materials Science in Semiconductor Processing Pub Date : 2025-09-13 DOI: 10.1016/j.mssp.2025.110057

Mao Jia , Bin Hou , Ling Yang , Lixin Guo , Xuefeng Zheng , Xiaohua Ma , Yue Hao

引用次数: 0

“In situ preparation of 3D flower like BiOBr/Bi24O31Br10 composite by annealing hydrothermal method for the ciprofloxacin degradation under simulated sunlight irradiation” 《模拟阳光照射下原位制备三维花状BiOBr/Bi24O31Br10复合材料用于环丙沙星降解的退火水热法》

IF 4.6 3区工程技术

Materials Science in Semiconductor Processing Pub Date : 2025-09-13 DOI: 10.1016/j.mssp.2025.110060

L. Mllaoiy , S. Bikerchalen , B. Akhsassi , B. Bakiz , S. Villain , A. Taoufyq , F. Guinneton , H. Hajjoul , J.-R. Gavarri , A. Benlhachemi

{"title":"“In situ preparation of 3D flower like BiOBr/Bi24O31Br10 composite by annealing hydrothermal method for the ciprofloxacin degradation under simulated sunlight irradiation”","authors":"L. Mllaoiy , S. Bikerchalen , B. Akhsassi , B. Bakiz , S. Villain , A. Taoufyq , F. Guinneton , H. Hajjoul , J.-R. Gavarri , A. Benlhachemi","doi":"10.1016/j.mssp.2025.110060","DOIUrl":"10.1016/j.mssp.2025.110060","url":null,"abstract":"<div><div>In this work, a hierarchical photocatalyst, BiOBr/Bi<sub>24</sub>O<sub>31</sub>Br<sub>10</sub>, was synthesized via a simple two-step hydrothermal and annealing process. The BiOBr/Bi<sub>24</sub>O<sub>31</sub>Br<sub>10</sub> microstructure exhibited significantly enhanced photocatalytic performance compared to pure BiOBr and Bi<sub>24</sub>O<sub>31</sub>Br<sub>10</sub>. Under simulated solar irradiation, it achieved 94 % degradation of ciprofloxacin (CIP) in 60 min, with a reaction rate 5.5 times higher than that of pure Bi<sub>24</sub>O<sub>31</sub>Br<sub>10</sub>. Rhodamine B (RhB) was also thoroughly degraded in 20 min. This improvement was attributed to several synergistic effects: the increased BET surface area provided more active sites; the enhanced adsorption capacity toward CIP facilitated its efficient degradation; and the broadened sunlight absorption range promoted the generation of charge carriers with an extended lifetime of 5.70 ns, surpassing that of the individual components. Additionally, the influence of operating parameters such as initial pH, photocatalyst dosage, initial pollutant concentration, and light intensity was systematically investigated.</div></div>","PeriodicalId":18240,"journal":{"name":"Materials Science in Semiconductor Processing","volume":"201 ","pages":"Article 110060"},"PeriodicalIF":4.6,"publicationDate":"2025-09-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145045475","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Enhancing the stability of perovskite solar cells through surface ring-opening reactions 通过表面开环反应提高钙钛矿太阳能电池的稳定性

IF 4.6 3区工程技术

Materials Science in Semiconductor Processing Pub Date : 2025-09-13 DOI: 10.1016/j.mssp.2025.110054

Shengcong Wu , Qiu Xiong , Shui-Yang Lien , Peng Gao

{"title":"Enhancing the stability of perovskite solar cells through surface ring-opening reactions","authors":"Shengcong Wu , Qiu Xiong , Shui-Yang Lien , Peng Gao","doi":"10.1016/j.mssp.2025.110054","DOIUrl":"10.1016/j.mssp.2025.110054","url":null,"abstract":"<div><div>Stability remains a crucial factor limiting the development of perovskite solar cells (PSCs). Traditional surface passivation layers are typically connected to the perovskite layer through hydrogen bonds. These hydrogen bonds are prone to decomposition under outdoor conditions, failing to protect the perovskite layer and potentially damaging the perovskite structure. These issues severely limit the performance and commercialization of PSCs. To address this challenge, this study utilizes the benzyl glycidyl ether (BGE) molecules to form covalent bonds with the ammonium organic cations on the perovskite surface. The covalent bonds strategy exhibits superior stability, while the reaction also generates hydroxyl and secondary amine groups that passivate defects and suppress ion migration inside the perovskite. This strategy significantly enhances the stability parameters of the PSCs, retaining 62 % of the initial efficiency after 1000 h of continuous illumination, which is higher than that of the control (20 %). Moreover, after being stored in an extreme environment of 75 °C for 200 h, these devices still maintained 80 % of initial efficiency, while the control devices were only 60 %.</div></div>","PeriodicalId":18240,"journal":{"name":"Materials Science in Semiconductor Processing","volume":"201 ","pages":"Article 110054"},"PeriodicalIF":4.6,"publicationDate":"2025-09-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145045474","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Tunable hafnium-doped InZnO thin film transistors via plasma-enhanced atomic layer deposition 通过等离子体增强原子层沉积的可调谐掺铪InZnO薄膜晶体管

IF 4.6 3区工程技术

Materials Science in Semiconductor Processing Pub Date : 2025-09-13 DOI: 10.1016/j.mssp.2025.110039

Jiong Liu , Sheng Han , Yu Zhang , Jingxuan Wei , Bojia Chen , Runzhou Li , Pei Yan , Jiangquan Kuang , Xinming Wu , Xuefeng Wu , Rongxu Bai , David W. Zhang , Qingqing Sun , Li Ji , Shen Hu

{"title":"Tunable hafnium-doped InZnO thin film transistors via plasma-enhanced atomic layer deposition","authors":"Jiong Liu , Sheng Han , Yu Zhang , Jingxuan Wei , Bojia Chen , Runzhou Li , Pei Yan , Jiangquan Kuang , Xinming Wu , Xuefeng Wu , Rongxu Bai , David W. Zhang , Qingqing Sun , Li Ji , Shen Hu","doi":"10.1016/j.mssp.2025.110039","DOIUrl":"10.1016/j.mssp.2025.110039","url":null,"abstract":"<div><div>Hafnium-doped InZnO (HIZO) thin film transistors (TFTs) were successfully fabricated via plasma-enhanced atomic layer deposition (PEALD) at low temperature (180 °C) for the first time, omitting the annealing process. Concretely, we adjusted the device performance by modulating the doping concentration of hafnium (Hf) cations and the oxygen vacancy content. The optimal 6.25 % doping content was determined. Based on this optimization, the HIZO TFTs exhibited an excellent field-effect mobility (<em>μ</em><sub><em>FE</em></sub>) of 21.7 cm<sup>2</sup>/V·s, a low threshold voltage (<em>V</em><sub><em>th</em></sub>) of ∼0.1 V, a minimum subthreshold swing (<em>SS</em>) of 69 mV/decade and a fantastic <em>I</em><sub><em>on</em></sub><em>/I</em><sub><em>off</em></sub> of exceeding 10<sup>8</sup> utilizing the hafnium oxide (HfO<sub>2</sub>) dielectric, which was one of the state-of-the-art performances among HIZO TFTs reported to date. Meanwhile, an excellent bias stability under both positive and negative bias stress was achieved. The favorable performance can be attributed to the effective suppression of overabundant oxygen vacancies and the passivation of defects at the channel–dielectric interface by Hf doping. The Hall effect measurement and X-ray photoelectron spectroscopy (XPS) further corroborate the ability to inhibit carrier concentration by Hf addition. This study presents a novel strategy for achieving excellent HIZO TFTs, holding promise for the next-generation high-performance display domain.</div></div>","PeriodicalId":18240,"journal":{"name":"Materials Science in Semiconductor Processing","volume":"201 ","pages":"Article 110039"},"PeriodicalIF":4.6,"publicationDate":"2025-09-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145045470","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Study on the growth behavior of Ni3Sn4 layer in Cu pillar/Ni/Sn microbump under high-temperature stress 高温应力下Cu柱/Ni/Sn微凸起中Ni3Sn4层生长行为研究

IF 4.6 3区工程技术

Materials Science in Semiconductor Processing Pub Date : 2025-09-13 DOI: 10.1016/j.mssp.2025.110058

Hao Yu , Yanqiong Yuan , Jian Wang , Linhua Liu , Zhiwei Fu , Jia-Yue Yang

{"title":"Study on the growth behavior of Ni3Sn4 layer in Cu pillar/Ni/Sn microbump under high-temperature stress","authors":"Hao Yu , Yanqiong Yuan , Jian Wang , Linhua Liu , Zhiwei Fu , Jia-Yue Yang","doi":"10.1016/j.mssp.2025.110058","DOIUrl":"10.1016/j.mssp.2025.110058","url":null,"abstract":"<div><div>Based on the numerical analysis of Ni atomic thermal diffusion flux, a kinetic model for the growth of the Ni<sub>3</sub>Sn<sub>4</sub> intermetallic compound at the Cu pillar/Ni/Sn microbump interface under high-temperature stress is established. Through in-situ microscopic comparative analysis of test samples at 100 °C, 125 °C and 150 °C over varying time intervals, it is observed that at 150 °C Ni<sub>3</sub>Sn<sub>4</sub> exhibits pronounced outward protrusion due to volumetric expansion. The maximum deviation between the model-predicted and experimentally measured Ni<sub>3</sub>Sn<sub>4</sub> thickness is only 0.244 μm (14.8 %). Further analysis of the Ni<sub>3</sub>Sn<sub>4</sub> growth behavior based on the model reveals that its growth rate decreases progressively with increasing thickness. As the Ni<sub>3</sub>Sn<sub>4</sub> thickness increases from 600 nm to 1600 nm, its growth rates at 100 °C, 125 °C, and 150 °C decrease from 0.10 nm/h, 1.22 nm/h, and 7.79 nm/h to 0.04 nm/h, 0.45 nm/h, and 2.93 nm/h, respectively, resulting in a parabolic growth trend of Ni<sub>3</sub>Sn<sub>4</sub> thickness over time. The growth rate of Ni<sub>3</sub>Sn<sub>4</sub> exhibits an exponential increase as a function of temperature. The temperatures corresponding to growth rates below 0.01 nm/h and above 1 nm/h are defined as the inflection point temperatures of “slow-growth” and “explosive-growth” modes, respectively. Since the growth rate of Ni<sub>3</sub>Sn<sub>4</sub> gradually decreases with increasing thickness, the two inflection point temperatures also vary with the Ni<sub>3</sub>Sn<sub>4</sub> thickness.</div></div>","PeriodicalId":18240,"journal":{"name":"Materials Science in Semiconductor Processing","volume":"201 ","pages":"Article 110058"},"PeriodicalIF":4.6,"publicationDate":"2025-09-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145045471","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Fast–charging lithium–ion batteries: Review on enhancing lithium nickel cobalt aluminum oxide cathodes with additives 快充锂离子电池：添加剂增强锂镍钴铝氧化物阴极的研究进展

IF 4.6 3区工程技术

Materials Science in Semiconductor Processing Pub Date : 2025-09-13 DOI: 10.1016/j.mssp.2025.110052

Teh Ubaidah Noh , Noorashrina A. Hamid

{"title":"Fast–charging lithium–ion batteries: Review on enhancing lithium nickel cobalt aluminum oxide cathodes with additives","authors":"Teh Ubaidah Noh , Noorashrina A. Hamid","doi":"10.1016/j.mssp.2025.110052","DOIUrl":"10.1016/j.mssp.2025.110052","url":null,"abstract":"<div><div>The demand for efficient, fast–charging lithium–ion batteries (LIBs) is increasing due to the growing reliance on electric vehicles and portable electronics. However, traditional LIBs have several limitations including thermal instability, rapid degradation, and low specific capacity during fast–charging, which restrict their performance and longevity. Advanced materials and innovative modifications are being explored to overcome these challenges and enhance the capabilities of LIBs. Among these, lithium nickel cobalt aluminum oxide (LiNi<sub>0</sub>.<sub>8</sub>Co<sub>0</sub>.<sub>1</sub>Al<sub>0</sub>.<sub>1</sub>O<sub>2</sub>, NCA) cathodes have emerged as promising candidates due to their high specific capacity (180–200 mAh/g) and superior thermal stability. This review focuses on the optimization of NCA cathodes for fast–charging applications by exploring various additives and methodologies involving conductive carbon, metal oxides, doping elements, surface coatings, polymeric binders, and ionic conductors. These additives are applied using strategies such as mixing with the active material, surface coating, and doping during the synthesis. The impact of these modifications on the performance metrics of the NCA cathode electrode is analyzed, emphasizing optimizing fast–charging capabilities. This review highlights the potential of NCA cathode electrodes to reduce charging times and extend cycle life, while addressing challenges related to material composition and environmental impact. Prospects for future research are discussed to enhance the applicability of NCA cathode electrodes in electric vehicles and portable electronic devices, and to address associated manufacturing challenges.</div></div>","PeriodicalId":18240,"journal":{"name":"Materials Science in Semiconductor Processing","volume":"201 ","pages":"Article 110052"},"PeriodicalIF":4.6,"publicationDate":"2025-09-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145045465","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Regulating oxygen vacancies to achieve stable non-volatile switching characteristics and neuromorphic computing in a-Ga2O3 based memristors 调节氧空位在a-Ga2O3基忆阻器中实现稳定的非易失性开关特性和神经形态计算

IF 4.6 3区工程技术

Materials Science in Semiconductor Processing Pub Date : 2025-09-13 DOI: 10.1016/j.mssp.2025.110056

Yuanyuan Zhu , Xin Wang , Miao Zhang , Yunfei Zhang , Shuo Liu , Hongjun Wang

{"title":"Regulating oxygen vacancies to achieve stable non-volatile switching characteristics and neuromorphic computing in a-Ga2O3 based memristors","authors":"Yuanyuan Zhu , Xin Wang , Miao Zhang , Yunfei Zhang , Shuo Liu , Hongjun Wang","doi":"10.1016/j.mssp.2025.110056","DOIUrl":"10.1016/j.mssp.2025.110056","url":null,"abstract":"<div><div>Gallium oxide has attracted considerable interest as a promising resistive switching (RS) layer for memristors, owing to its wide bandgap, high breakdown electric field, and excellent thermal stability. However, practical adoption remains hindered by challenges such as relatively low switching ratio and insufficient cycling stability, which limit device performance and reliability. Herein, amorphous Ga<sub>2</sub>O<sub>3</sub> (a-Ga<sub>2</sub>O<sub>3</sub>) films serve as the RS layer to construct the memristors, where oxygen vacancies are precisely regulated to enhance the switching performance. The W/a-Ga<sub>2</sub>O<sub>3</sub>/Pt device fabricated with an argon-to-oxygen ratio of 40:10 outperforms those made with other ratios in RS behaviors, demonstrating a larger switching window (∼10<sup>3</sup>), superior retention (10<sup>4</sup> s), faster response times (90 μs), high stability, and concentrated distributions of switching voltages. Furthermore, we elucidate the electrical transport mechanisms and conductive filaments (CFs) models responsible for the enhanced switching performance. More encouragingly, the a-Ga<sub>2</sub>O<sub>3</sub> device achieved up to 98.67 % accuracy on the Mixed National Institute of Standards and Technology image recognition task. This work provides an in-depth exploration of a-Ga<sub>2</sub>O<sub>3</sub>-based memristors, offering a promising avenue for switching materials in storage and neuromorphic computing applications.</div></div>","PeriodicalId":18240,"journal":{"name":"Materials Science in Semiconductor Processing","volume":"201 ","pages":"Article 110056"},"PeriodicalIF":4.6,"publicationDate":"2025-09-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145045472","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Non-volatile, high on/off ratio, durable memristor devices based on ScAlN for artificial synapse 非易失性、高开/关比、耐用的基于ScAlN的人工突触忆阻器器件

IF 4.6 3区工程技术

Materials Science in Semiconductor Processing Pub Date : 2025-09-12 DOI: 10.1016/j.mssp.2025.110025

Cong Han , Haiming Qin , Rui Hu , Weijing Shao , Hanbing Fang , Hao Zhang , Xinpeng Wang , Yu Wang , Yi Liu , Yi Tong

{"title":"Non-volatile, high on/off ratio, durable memristor devices based on ScAlN for artificial synapse","authors":"Cong Han , Haiming Qin , Rui Hu , Weijing Shao , Hanbing Fang , Hao Zhang , Xinpeng Wang , Yu Wang , Yi Liu , Yi Tong","doi":"10.1016/j.mssp.2025.110025","DOIUrl":"10.1016/j.mssp.2025.110025","url":null,"abstract":"<div><div>Sc-doped AlN has attracted a large amount of attention due to the discovery of ferroelectricity. The co-existing resistive characteristic also plays an important role in this material. However, few studies on memristors focus on it, especially in the field of neuromorphic computing. This study presents the construction of MIM-structured memristors utilizing Sc-doped AlN alloy material as the insulating layer. The memory attributes of the Cu/Sc<sub>0.2</sub>Al<sub>0.8</sub>N/Pt/Ti device are presented for neuromorphic systems. This device demonstrates excellent resistive switching performance characterized by consistent <em>I-V</em> cycles above 200, a substantial ON/OFF ratio surpassing 10<sup>6</sup> %, prolonged retention time exceeding 10,000 s, and favorable device uniformity. By adjusting the compliance current, this device demonstrates outstanding attributes of regulated progressive switching and multi-tiered resistance states. The switching and conduction mechanism is ascribed to defect-assisted conduction by using physical models and the analysis of temperature-dependent <em>I-V</em> curves. Furthermore, synaptic activities, including long-term potentiation (LTP), long-term depression (LTD), and paired-pulse facilitation (PPF), are effectively replicated. The MNIST handwritten digits image recognition task was examined concerning the linearity of potential and depression.</div></div>","PeriodicalId":18240,"journal":{"name":"Materials Science in Semiconductor Processing","volume":"201 ","pages":"Article 110025"},"PeriodicalIF":4.6,"publicationDate":"2025-09-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145046842","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Tuning linear and nonlinear optical properties of Se70Te20Sb10 thin films via 3 MeV proton irradiation for photonic applications 利用3mev质子辐照调整Se70Te20Sb10薄膜的线性和非线性光学特性

IF 4.6 3区工程技术

Materials Science in Semiconductor Processing Pub Date : 2025-09-12 DOI: 10.1016/j.mssp.2025.110040

Thabang K. Matabana , Cosmas M. Muiva , Morgan Madhuku , Neeraj Mehta , Lawrence K. Benjamin , Thobega Mosimanegape , Dineo P. Sebuso , Conrad B. Tabi

{"title":"Tuning linear and nonlinear optical properties of Se70Te20Sb10 thin films via 3 MeV proton irradiation for photonic applications","authors":"Thabang K. Matabana , Cosmas M. Muiva , Morgan Madhuku , Neeraj Mehta , Lawrence K. Benjamin , Thobega Mosimanegape , Dineo P. Sebuso , Conrad B. Tabi","doi":"10.1016/j.mssp.2025.110040","DOIUrl":"10.1016/j.mssp.2025.110040","url":null,"abstract":"<div><div>This study aims to investigate how 3 MeV proton irradiation influences the structural, linear, and nonlinear optical properties of Se<sub>70</sub>Te<sub>20</sub>Sb<sub>10</sub> thin films, with the goal of assessing their potential for photonic device applications. Thin films were thermally deposited by electron-beam evaporation and exposed to proton fluences ranging from 5 × 10<sup>13</sup> to 5 × 10<sup>16</sup> ions/cm<sup>2</sup>. X-ray diffraction and Field Emission Scanning Electron Microscope (FESEM) confirmed the amorphous structure of the films across all fluences. while AFM revealed a substantial increase in surface roughness from 40.5 nm (as-grown) to 386.7 nm at the highest fluence, indicating irradiation-induced morphological reorganization. Optical characterization showed that transmittance and reflectance decreased with increasing fluence, while the absorption coefficient (α) in the 1.5–2.5 eV range increased. The optical band gap (E<sub>g</sub>) exhibited a non-linear dependence, decreasing from 1.298 eV (as-grown) to 1.281 eV at 5 × 10<sup>14</sup> ions/cm<sup>2</sup> then rising to 1.389 eV at 5 × 10<sup>15</sup> ions/cm<sup>2</sup>, and then reducing again at the highest fluence. Urbach energy (Eu) varied complementarily, reflecting disorder–recovery dynamics. The third-order nonlinear susceptibility χ<sup>3</sup> peaked at 1.803 × 10<sup>−11</sup> esu, with corresponding enhancement in the nonlinear refractive index n<sub>2</sub>. Dielectric functions and energy loss spectra further confirmed fluence-dependent changes in electronic response. These findings demonstrate that Sb-stabilized Se–Te alloys exhibit tunable optical properties under proton irradiation, making them promising candidates for radiation-hardened optoelectronic and photonic devices.</div></div>","PeriodicalId":18240,"journal":{"name":"Materials Science in Semiconductor Processing","volume":"201 ","pages":"Article 110040"},"PeriodicalIF":4.6,"publicationDate":"2025-09-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145045468","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0