Materials Science in Semiconductor Processing最新文献

{"title":"Rapid, efficient, and sensitive electrochemical nanosensors for the detection of creatinine biomolecule","authors":"Rizwan Wahab ,&nbsp;Farheen Khan ,&nbsp;Wejdan Al-Otaibi ,&nbsp;Manawwer Alam ,&nbsp;Javed Ahmad ,&nbsp;Quaiser Saquib ,&nbsp;Abdulaziz A. Al-Khedhairy","doi":"10.1016/j.mssp.2025.110099","DOIUrl":"10.1016/j.mssp.2025.110099","url":null,"abstract":"<div><div>The creatinine is an important nitrogenous based organic compound recovered by the process of catabolism. Creatinine level in human blood samples are very essential because their level directly reflect to the renal, muscle, and thyroid function in human body. From the level of creatinine in human blood easily monitored and diagnosed the condition of patients. The current study initially, demonstrate the synthesis of molybdenum oxide nanorods (<em>MoOXNRs</em>) via solution process and characterized with a number of equipment's in detail. Thereafter, the <em>MoOXNRs</em> powder was utilized for sensing aptitude of creatinine (CR) with glassy carbon electrode (GCE). A number of parameters such as effect of concentrations, scan rate, cyclic test were opted and performed for the electrochemical study. A variety of analyte concentrations (CR-0.98 × 10⁻⁶ M to 500 × 10⁻⁶ M in PBS) were chosen to assess the effectiveness of the electrode based sensor (MoOXNRs/GCE). The sensor was also checked from a very low to high scan rate (5 × 10⁻³, to 15 × 10⁻² V/s) respectively. The chronoampherometric (CrA) analysis was conducted from initial to longer intermissions (0–1000<em>s</em>). The cycle response (CR) and electrochemical impedance (EIS) studies were also perform and based on the data a circuit was constructed. The quantitative and qualitative detections limits values of LOD and LOQ of MoOXNRs/GCE-I_Pa (0.100 × 10⁻⁵: 0. 304 × 10⁻⁵) and MoOXNRs/GCE-I_Pc (0.619 × 10⁻⁴: 0.187 × 10⁻⁵) were also calculated. Apart from this, a possible mechanism was described in detail.</div></div>","PeriodicalId":18240,"journal":{"name":"Materials Science in Semiconductor Processing","volume":"202 ","pages":"Article 110099"},"PeriodicalIF":4.6,"publicationDate":"2025-10-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145270682","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Engineering oxygen precipitation for simultaneous denuded zone and bulk microdefect formation in pre-annealed heavily boron-doped Czochralski silicon substrates for p/p+ epitaxial wafers","authors":"Jinge Wang ,&nbsp;Yilun Wang ,&nbsp;Tong Zhao ,&nbsp;Yuna Yin ,&nbsp;Pengfei Gao ,&nbsp;Tiebo Zheng ,&nbsp;Xingbo Liang ,&nbsp;Daxi Tian ,&nbsp;Deren Yang ,&nbsp;Xiangyang Ma","doi":"10.1016/j.mssp.2025.110118","DOIUrl":"10.1016/j.mssp.2025.110118","url":null,"abstract":"<div><div>Heavily boron-doped Czochralski (HB-Cz) silicon substrates (10–20 mΩ·cm) for p/p⁺ epitaxial wafers face difficulty in simultaneously forming an oxide-precipitate-free denuded zone (DZ) and a high-density bulk microdefect (BMD) zone during device thermal processing, due to oxygen precipitation enhanced by the heavy boron-doping. The as-received HB-Cz silicon substrates, whether from the seed-end or the tail-end of the silicon crystal ingot, fail to simultaneously form both a DZ and a high-density BMD zone after the simulated device thermal processing (780 °C/3 h + 1000 °C/16 h, L-H annealing) of the corresponding epitaxial wafers. This work investigates the pre-annealing processes involving rapid thermal annealing (RTA), conventional furnace annealing (CFA), and their combinations for HB-Cz silicon substrates to address the aforementioned technical dilemma. As a result, we establish a dedicated pre-annealing process: the non-interchangeable, sequential application of RTA (1250 °C/30 s, cooling rate: 25–100 °C/s) and CFA (1200 °C/3 h, ramping-up from 700 to 1200 °C at 5 °C/min). The RTA step dissolves the grown-in oxide precipitates and introduces the vacancy-oxygen (VO_m, m ≤ 4) complexes into the bulk region of substrate, serving as the heterogeneous nucleation precursors for oxygen precipitation during the subsequent CFA step, while occurring vacancy out-diffusion near the surface of substrate to facilitate DZ formation. The subsequent CFA step enables the oxide precipitate nucleation and growth based on the RTA-induced VO_m complexes, while simultaneously promoting the oxygen out-diffusion to secure the DZ width. The optimized RTA + CFA pre-annealing process, ensures both a well-defined DZ (&gt;40 μm) and high-density BMDs in HB-Cz silicon substrates from any crystal ingot position after the L-H annealing of corresponding p/p⁺ epitaxial wafers. Therefore, this RTA + CFA pre-annealing strategy provides a robust and universal technical foundation for manufacturing high-performance p/p⁺ epitaxial wafers essential for advanced power devices and integrated circuits.</div></div>","PeriodicalId":18240,"journal":{"name":"Materials Science in Semiconductor Processing","volume":"202 ","pages":"Article 110118"},"PeriodicalIF":4.6,"publicationDate":"2025-10-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145270541","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Optimal stoichiometry and performance evolution in As-Se based OTS devices","authors":"Yuhao Wang ,&nbsp;Haotian Wang ,&nbsp;Xiangyu Fu ,&nbsp;Yulai Zhu ,&nbsp;Sannian Song ,&nbsp;Zhitang Song","doi":"10.1016/j.mssp.2025.110079","DOIUrl":"10.1016/j.mssp.2025.110079","url":null,"abstract":"<div><div>Arsenic-selenium (As-Se)-based ovonic threshold switching (OTS) devices are essential components for facilitating effective non-volatile memory systems. This study examines the performance evolution of As-Se OTS devices with different arsenic concentrations. A non-monotonic pattern is evident in device performance: the leakage current initially diminishes and subsequently escalates with rising As content, whereas the threshold voltage displays an inverse tendency. The gadget containing 50 % As exhibits reduced leakage and enhanced durability features. Molecular dynamics simulations indicate that at low arsenic level, Se-Se homopolar bonds are predominant; however, these bonds are markedly diminished at intermediate compositions. At elevated arsenic concentrations, arsenic-selenium heteropolar bonds diminish, but arsenic-arsenic interactions prevail. Analysis of the coordination number reveals that the average coordination number, at 50 % arsenic, nearly attains the optimal threshold of 2.4, signifying enhanced network stiffness. Furthermore, electronic structure study indicates that the bandgap reaches its peak at a 50 % composition, reflecting substantial contributions from both As and Se p-orbitals. These findings determine the ideal As-Se stoichiometry for high-performance OTS devices and provide significant insights for material and device design.</div></div>","PeriodicalId":18240,"journal":{"name":"Materials Science in Semiconductor Processing","volume":"202 ","pages":"Article 110079"},"PeriodicalIF":4.6,"publicationDate":"2025-10-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145270681","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"First-principles investigation of transition metal and nitrogen co-doped graphene as gas-sensing materials for poisonous and hazardous gas molecules","authors":"Tianyu Sun ,&nbsp;Tao Shen ,&nbsp;Chi Liu ,&nbsp;Xin Liu ,&nbsp;Yue Feng","doi":"10.1016/j.mssp.2025.110115","DOIUrl":"10.1016/j.mssp.2025.110115","url":null,"abstract":"<div><div>Carbon monoxide (CO), sulfur dioxide (SO₂), and ammonia (NH₃) are three prevalent hazardous gases that pose significant threats to human health and the environment. Therefore, there is an urgent need for highly efficient gas-sensitive materials to detect harmful gases. Perfect graphene (PG) is considered an excellent gas-sensitive material because of its substantial surface area and superior electrical characteristics, yet its chemical inertness restricts its sensitivity. This study utilized density functional theory (DFT) to induce defects onto the PG surface, thus creating defective graphene (DG). Thereafter, transition metal atoms: scandium(Sc), titanium(Ti), vanadium(V), and chromium(Cr) were co-doped with nitrogen(N) atoms into DG to produce MN_<em>x</em>C_<em>4-x</em>-DG (x = 0–4, M = Sc/Ti/V/Cr) structures, and their stability was examined. Based on the most stable configuration MN₄-DG (M = Sc, Ti, V, Cr), its adsorption behavior for the three gases was studied. The research results indicate that the formation of defects and the co-doping of transition metals and N atoms enhance the adsorption capacity of PG for three toxic and harmful gases. The material qualities were analyzed in terms of recovery time, sensitivity, and selectivity. The findings indicated that the TiN₄-DG and CrN₄-DG structures demonstrate regenerative ability, rapid response characteristics and selectivity establishing a theoretical foundation for advancing novel gas-sensitive materials.</div></div>","PeriodicalId":18240,"journal":{"name":"Materials Science in Semiconductor Processing","volume":"202 ","pages":"Article 110115"},"PeriodicalIF":4.6,"publicationDate":"2025-10-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145223578","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Enhancing copper interconnect reliability with self-assembled monolayer 1-(3-Aminopropyl)silatrane as diffusion barrier layer: A computational study","authors":"Zong-Yan Zhao ,&nbsp;Yan-Ting Xu ,&nbsp;Chen-Qi Shi ,&nbsp;Qi Zhao ,&nbsp;Ming Wen","doi":"10.1016/j.mssp.2025.110123","DOIUrl":"10.1016/j.mssp.2025.110123","url":null,"abstract":"<div><div>With the advancement of integrated circuit technology towards smaller dimensions and higher performance, the issue of copper interconnect diffusion has emerged as a critical factor limiting their reliability. To enhance the reliability of copper interconnects, this study focuses on the innovative diffusion barrier material, self-assembled monolayer (SAM) 1-(3-aminopropyl)silazane (APS). By integrating density functional theory calculations with molecular dynamics simulations, an in-depth investigation is conducted into the adsorption behavior of APS on the SiO₂ surface, the formation mechanism of SAM, and the microstructure and properties of the Si/SiO₂/SAM-APS/Cu interface. The research demonstrates that APS molecules form strong chemical interactions with the SiO₂ surface via amino groups and can stably assemble into a monolayer on the SiO₂ surface, exhibiting a significant diffusion barrier effect. Particularly under high-temperature conditions, the SAM-APS layer maintains excellent thermal stability and a robust diffusion barrier capacity. Furthermore, the APS SAM configuration induces a distinct band structure at the interface, effectively inhibiting the diffusion of electrons and metal ions and enhancing the stability of the interface. Simulation results indicate that the SAM-APS layer achieves a diffusion barrier height exceeding 11.35 eV at the SiO₂/Cu interface, highlighting its exceptional application potential. This study introduces novel concepts for the design of diffusion barrier layers in copper interconnect technology and provides a scientific foundation for the development of high-performance and high-reliability microelectronic devices. Future research will focus on further optimizing the performance of SAM-APS and exploring its application potential in more complex microelectronic systems.</div></div>","PeriodicalId":18240,"journal":{"name":"Materials Science in Semiconductor Processing","volume":"202 ","pages":"Article 110123"},"PeriodicalIF":4.6,"publicationDate":"2025-10-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145270679","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Predictive modeling of mixed abrasive slurry for enhanced performance in tungsten chemical mechanical polishing: A particle number concentration approach","authors":"Geumji Back ,&nbsp;Seungjun Oh ,&nbsp;Dongho Lee ,&nbsp;Taesung Kim","doi":"10.1016/j.mssp.2025.110119","DOIUrl":"10.1016/j.mssp.2025.110119","url":null,"abstract":"<div><div>As semiconductor devices continue to scale down and incorporate increasingly complex multilayer structures, chemical mechanical polishing (CMP) faces critical challenges in simultaneously achieving high removal rates (RR) and excellent within-wafer non-uniformity (WIWNU). Conventional single abrasive slurries and mass concentration–based mixed abrasive slurry (MAS) models have reached their performance limits, primarily because they disregard the actual number distribution of particles and the effects of polydispersity. In addition, traditional light-scattering analysis for particle size measurement cannot accurately determine the mixing ratios of different sized abrasives in polydisperse conditions. To overcome these limitations, this study used a scanning mobility particle sizer (SMPS) to precisely quantify particle number concentrations in mixed slurries and incorporated these data into a predictive MAS model. The contact area analysis, further supported by packing density calculations, indicated that the maximum contact area occurs at an optimal composition of 55 % large particles (113 nm) and 45 % small particles (55 nm). Tungsten CMP experiments verified these predictions, achieving up to a 6.45-fold increase in removal rate and a 54.1 % reduction in WIWNU compared with single abrasive slurries under same total particle counts. Moreover, the removal rate exhibited a strong linear correlation with the calculated total contact area (R² = 0.90), while the number-based model substantially reduced prediction errors relative to conventional mass-based models (RMSE: 129.84 vs. 223.38; MAPE: 17.55 % vs. 24.12 %). These results demonstrate that particle number concentration-based modeling provides a quantitative basis for slurry optimization, enabling the simultaneous enhancement of efficiency and uniformity in advanced tungsten CMP.</div></div>","PeriodicalId":18240,"journal":{"name":"Materials Science in Semiconductor Processing","volume":"202 ","pages":"Article 110119"},"PeriodicalIF":4.6,"publicationDate":"2025-10-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145223579","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Hydrothermally fabricated perovskite-type composite (NiMnO3/PANI), an effective electrocatalyst for hydrogen evolution reaction (HER)","authors":"Sadia Fareed ,&nbsp;F.F. Alharbi ,&nbsp;Nidhal Drissi ,&nbsp;Hala M. Abo-Dief ,&nbsp;Abdelaziz Gassoumi ,&nbsp;Abhinav Kumar","doi":"10.1016/j.mssp.2025.110083","DOIUrl":"10.1016/j.mssp.2025.110083","url":null,"abstract":"<div><div>Currently, water splitting is the most widely used and desirable ecologically friendly energy source. The development of a long-lasting, improved performance, and efficient electroactive catalyst to boost water-splitting efficiency is now major initiative. To increase effectiveness of water splitting, hydrothermal method was utilized to generate NiMnO₃/PANI, a cost-effective and naturally approachable composite material. Numerous analytical methodologies, including Scanning electron microscopy (SEM), Brunauer Emmett Teller (BET) and X-ray diffraction (XRD) were involved to examine morphology, surface area and structure characteristics. NiMnO₃/PANI nanocomposite electrochemical properties were also determined employing a 3-electrode setup in 1.0 M alkaline media (KOH), which shows very minimal overpotential (η) −188 mV at 10 mA/cm² current density (j). Because of its significant ECSA of 625 cm² and enhanced endurance for 50 h, nanocomposite content performs well in HER evaluations. A deeper examination indicated significantly lower Tafel value (65 mV/dec), suggesting that NiMnO₃/PANI nanocomposite exhibited quicker reaction kinetics and greater electrocatalytic efficiency. The previously mentioned nanohybrid NiMnO₃/PANI has a large surface area, which makes it highly promising for electrochemical processes such as water electrolysis. Thus, the resulting nanocomposite seems to be a great electroactive catalyst for energy conversion and HER applications.</div></div>","PeriodicalId":18240,"journal":{"name":"Materials Science in Semiconductor Processing","volume":"201 ","pages":"Article 110083"},"PeriodicalIF":4.6,"publicationDate":"2025-10-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145221416","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Scalable fabrication of CuOx/NiOx composite hole transport layer via a sequential magnetron sputtering method for efficient and stable perovskite solar cells","authors":"Yinsheng Gu ,&nbsp;Yongpan Liu ,&nbsp;Yuchen Sheng ,&nbsp;Fang Wang ,&nbsp;Yang Yang ,&nbsp;Chang Liu ,&nbsp;Jiwen Jiang ,&nbsp;Kuanxiang Zhang ,&nbsp;Yingwei Lu ,&nbsp;Paifeng Luo","doi":"10.1016/j.mssp.2025.110110","DOIUrl":"10.1016/j.mssp.2025.110110","url":null,"abstract":"<div><div>Magnetron sputtering inorganic NiO_x hole transport layer (HTL) has become a practical method in the industrial production of perovskite solar cells (PSCs), owing to its advantages of large-area fabrication and high process controllability. However, the relatively poor conductivity and high defect density of HTL hinder further improvements in device performance. In this work, to address the above issues of sputtered NiO_x, the composite HTL of CuO_x/NiO_x was innovatively deposited by sequential sputtering of Cu and NiO targets with the easy industrial production. Subsequently, through the optimization of the sputtering process parameters (time, atmosphere, and annealing temperature), the composite HTL demonstrated superior photoelectric performance compared to the single NiO_x. Meanwhile, the introduction of CuO_x effectively reduced the defect density of the PSCs, thereby improving the carrier transport dynamics. Finally, this viable industrialization strategy boosted the PCE of MA_0.85FA_0.15PbI₃ PSCs from 15.3 % to 17.86 %, which was prepared without spin-coating fragile self-assembled monolayers (SAMs) under open-air conditions, demonstrating promising potential for commercial applications.</div></div>","PeriodicalId":18240,"journal":{"name":"Materials Science in Semiconductor Processing","volume":"201 ","pages":"Article 110110"},"PeriodicalIF":4.6,"publicationDate":"2025-10-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145221417","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Rod-on-sheet g-C3N4/CdS hybrid nanostructure for enhanced photocatalytic detoxification of industrial effluents","authors":"A. Muthuganesh ,&nbsp;S. Mohamed Rafi ,&nbsp;E.V. Siddhardhan ,&nbsp;S. Surender ,&nbsp;Ramesh Kumar Raji ,&nbsp;J.P. Soundranayagam ,&nbsp;P. Elangovan ,&nbsp;X. Helan Flora","doi":"10.1016/j.mssp.2025.110102","DOIUrl":"10.1016/j.mssp.2025.110102","url":null,"abstract":"<div><div>The development of high-performance and sustainable photocatalysts is pivotal for mitigating environmental pollution, particularly in the treatment of dye-contaminated industrial wastewater. In this study, we report the synthesis of a graphitic carbon nitride/cadmium sulfide (g-CN/CdS) composite via a facile hydrothermal method, aimed at enhancing visible-light-driven photocatalytic efficiency and long-term stability. Comprehensive structural and chemical characterizations, including X-ray diffraction (XRD) and Fourier-transform infrared (FT-IR) spectroscopy, confirm the successful anchoring of CdS nanoparticles onto the g-CN matrix. Photocatalytic performance evaluations reveal that the g-CN/CdS composite exhibits a significantly higher degradation rate of Congo Red (CR) dye compared to its individual counterparts, achieving an exceptional degradation efficiency of 99.85 % under visible-light irradiation. The superior activity is primarily attributed to the synergistic coupling between g-CN and CdS, which facilitates efficient charge carrier separation, suppresses electron–hole recombination, and mitigates photocorrosion. This work underscores the importance of heterojunction engineering in optimizing photocatalytic materials and offers a viable pathway for designing next-generation nanocomposites for eco-friendly and scalable wastewater remediation technologies.</div></div>","PeriodicalId":18240,"journal":{"name":"Materials Science in Semiconductor Processing","volume":"202 ","pages":"Article 110102"},"PeriodicalIF":4.6,"publicationDate":"2025-10-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145223577","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Recent progress in photocatalytic applications of metals- and non-metals-doped MoS2","authors":"Micheal Alowakennu ,&nbsp;Mohammad Mansoob Khan ,&nbsp;Khadijat Olabisi Abdulwahab","doi":"10.1016/j.mssp.2025.110082","DOIUrl":"10.1016/j.mssp.2025.110082","url":null,"abstract":"<div><div>Molybdenum disulfide (MoS₂), a two-dimensional (2D) transition metal dichalcogenide, has materialized as a promising material for photocatalysis due to its distinct electronic, optical, and chemical properties. However, its intrinsic limitations, such as a narrow absorption spectrum and limited charge separation efficiency, hinder its practical utility. Recent advancements in doping MoS₂ with metal and non-metal elements have shown significant potential in overcoming these challenges. This review presents a detailed analysis of the strategies and mechanisms underlying metal and non-metal doping of MoS₂, focusing on their impact on electronic structure, optical properties, and photocatalytic performance. In short, doping with metals and non-metals induces various modifications, such as the formation of more active sites and enhanced electronic properties. Additionally, the use of noble metals as doping agents facilitates the formation of localized surface plasmon resonance, effectively mitigating charge recombination and prolonging the lifetime of the charge-separated state, thereby enhancing photocatalytic efficiency. Non-metal dopants, on the other hand, contribute to bandgap narrowing, improve light absorption, and introduce defect states that further enhance photocatalytic activity.</div></div>","PeriodicalId":18240,"journal":{"name":"Materials Science in Semiconductor Processing","volume":"201 ","pages":"Article 110082"},"PeriodicalIF":4.6,"publicationDate":"2025-10-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145221415","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}