Tianyu Sun , Tao Shen , Chi Liu , Xin Liu , Yue Feng
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引用次数: 0
Abstract
Carbon monoxide (CO), sulfur dioxide (SO2), and ammonia (NH3) are three prevalent hazardous gases that pose significant threats to human health and the environment. Therefore, there is an urgent need for highly efficient gas-sensitive materials to detect harmful gases. Perfect graphene (PG) is considered an excellent gas-sensitive material because of its substantial surface area and superior electrical characteristics, yet its chemical inertness restricts its sensitivity. This study utilized density functional theory (DFT) to induce defects onto the PG surface, thus creating defective graphene (DG). Thereafter, transition metal atoms: scandium(Sc), titanium(Ti), vanadium(V), and chromium(Cr) were co-doped with nitrogen(N) atoms into DG to produce MNxC4-x-DG (x = 0–4, M = Sc/Ti/V/Cr) structures, and their stability was examined. Based on the most stable configuration MN4-DG (M = Sc, Ti, V, Cr), its adsorption behavior for the three gases was studied. The research results indicate that the formation of defects and the co-doping of transition metals and N atoms enhance the adsorption capacity of PG for three toxic and harmful gases. The material qualities were analyzed in terms of recovery time, sensitivity, and selectivity. The findings indicated that the TiN4-DG and CrN4-DG structures demonstrate regenerative ability, rapid response characteristics and selectivity establishing a theoretical foundation for advancing novel gas-sensitive materials.
期刊介绍:
Materials Science in Semiconductor Processing provides a unique forum for the discussion of novel processing, applications and theoretical studies of functional materials and devices for (opto)electronics, sensors, detectors, biotechnology and green energy.
Each issue will aim to provide a snapshot of current insights, new achievements, breakthroughs and future trends in such diverse fields as microelectronics, energy conversion and storage, communications, biotechnology, (photo)catalysis, nano- and thin-film technology, hybrid and composite materials, chemical processing, vapor-phase deposition, device fabrication, and modelling, which are the backbone of advanced semiconductor processing and applications.
Coverage will include: advanced lithography for submicron devices; etching and related topics; ion implantation; damage evolution and related issues; plasma and thermal CVD; rapid thermal processing; advanced metallization and interconnect schemes; thin dielectric layers, oxidation; sol-gel processing; chemical bath and (electro)chemical deposition; compound semiconductor processing; new non-oxide materials and their applications; (macro)molecular and hybrid materials; molecular dynamics, ab-initio methods, Monte Carlo, etc.; new materials and processes for discrete and integrated circuits; magnetic materials and spintronics; heterostructures and quantum devices; engineering of the electrical and optical properties of semiconductors; crystal growth mechanisms; reliability, defect density, intrinsic impurities and defects.