Recent progress in photocatalytic applications of metals- and non-metals-doped MoS2

IF 4.6 3区工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC

Materials Science in Semiconductor Processing Pub Date : 2025-10-03 DOI:10.1016/j.mssp.2025.110082

Micheal Alowakennu , Mohammad Mansoob Khan , Khadijat Olabisi Abdulwahab

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Abstract

Molybdenum disulfide (MoS₂), a two-dimensional (2D) transition metal dichalcogenide, has materialized as a promising material for photocatalysis due to its distinct electronic, optical, and chemical properties. However, its intrinsic limitations, such as a narrow absorption spectrum and limited charge separation efficiency, hinder its practical utility. Recent advancements in doping MoS₂ with metal and non-metal elements have shown significant potential in overcoming these challenges. This review presents a detailed analysis of the strategies and mechanisms underlying metal and non-metal doping of MoS₂, focusing on their impact on electronic structure, optical properties, and photocatalytic performance. In short, doping with metals and non-metals induces various modifications, such as the formation of more active sites and enhanced electronic properties. Additionally, the use of noble metals as doping agents facilitates the formation of localized surface plasmon resonance, effectively mitigating charge recombination and prolonging the lifetime of the charge-separated state, thereby enhancing photocatalytic efficiency. Non-metal dopants, on the other hand, contribute to bandgap narrowing, improve light absorption, and introduce defect states that further enhance photocatalytic activity.

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金属和非金属掺杂二硫化钼光催化应用研究进展

二硫化钼（MoS2）是一种二维（2D）过渡金属二硫化物，由于其独特的电子、光学和化学性质而成为一种很有前途的光催化材料。然而，其固有的局限性，如窄的吸收光谱和有限的电荷分离效率，阻碍了它的实际应用。金属和非金属元素掺杂二硫化钼的最新进展显示出克服这些挑战的巨大潜力。本文详细分析了二硫化钼金属和非金属掺杂的策略和机制，重点介绍了它们对二硫化钼电子结构、光学性质和光催化性能的影响。简而言之，金属和非金属的掺杂诱导了各种修饰，例如形成更多的活性位点和增强的电子性能。此外，使用贵金属作为掺杂剂有利于局部表面等离子体共振的形成，有效地减轻了电荷重组，延长了电荷分离态的寿命，从而提高了光催化效率。另一方面，非金属掺杂有助于缩小带隙，改善光吸收，并引入进一步增强光催化活性的缺陷态。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

Materials Science in Semiconductor Processing 工程技术-材料科学：综合

CiteScore

8.00

自引率

4.90%

发文量

780

审稿时长

42 days

期刊介绍： Materials Science in Semiconductor Processing provides a unique forum for the discussion of novel processing, applications and theoretical studies of functional materials and devices for (opto)electronics, sensors, detectors, biotechnology and green energy. Each issue will aim to provide a snapshot of current insights, new achievements, breakthroughs and future trends in such diverse fields as microelectronics, energy conversion and storage, communications, biotechnology, (photo)catalysis, nano- and thin-film technology, hybrid and composite materials, chemical processing, vapor-phase deposition, device fabrication, and modelling, which are the backbone of advanced semiconductor processing and applications. Coverage will include: advanced lithography for submicron devices; etching and related topics; ion implantation; damage evolution and related issues; plasma and thermal CVD; rapid thermal processing; advanced metallization and interconnect schemes; thin dielectric layers, oxidation; sol-gel processing; chemical bath and (electro)chemical deposition; compound semiconductor processing; new non-oxide materials and their applications; (macro)molecular and hybrid materials; molecular dynamics, ab-initio methods, Monte Carlo, etc.; new materials and processes for discrete and integrated circuits; magnetic materials and spintronics; heterostructures and quantum devices; engineering of the electrical and optical properties of semiconductors; crystal growth mechanisms; reliability, defect density, intrinsic impurities and defects.