Materials Science in Semiconductor Processing最新文献

{"title":"High refractive index calcium-doped thorium oxide-reinforced polyvinyl alcohol nanocomposite for visible light enhancement","authors":"Mahadeva Prasad Puttaswamy ,&nbsp;Nithin Kundachira Subramani ,&nbsp;Sachhidananda Shivanna ,&nbsp;Nanjundaswamy Gumatapura Siddamallappa ,&nbsp;Madhukar Beejaganahalli Sangameshwara ,&nbsp;Chitra S.G. ,&nbsp;R Gopalakrishne Urs","doi":"10.1016/j.mssp.2025.109484","DOIUrl":"10.1016/j.mssp.2025.109484","url":null,"abstract":"<div><div>This study explores the synthesis and optical properties of polyvinyl alcohol (PVA)/Calcium-Doped Thorium Oxide (CaThO₃) nanocomposite (PNC) films for enhanced visible light applications. The films were fabricated using solution combustion and solution intercalation methods, with their structural and morphological properties confirmed through FTIR, XRD, and SEM analyses. FTIR identified functional groups and bonding interactions, XRD verified the crystalline structure, and SEM provided insights into nanoparticle morphology and dispersion within the PVA matrix. UV–visible spectroscopy revealed that incorporating CaThO₃ nanofillers significantly enhances UV absorption and optoelectronic properties while maintaining high visible light transmittance, making the films suitable for photonic applications. The calculated photonic absorption coefficient demonstrated tunable optical behavior, with a reduced optical band gap from 5.15 eV to 4.50 eV, enhancing electron excitation and enabling advanced photovoltaic and photodetection applications. Additionally, the refractive index of the films increased from 1.66 to 1.97 at 550 nm with CaThO₃ incorporation, resulting in improved light output and efficiency when applied to LEDs. Comparative studies of blue and red LEDs highlighted higher light intensity (1.99) at blue wavelengths, attributed to the refractive index enhancement. These findings underscore the potential of PVA/CaThO₃ NCs to enhance optical device performance, particularly in printable LED technologies, while their practical feasibility, scalability, cost-effectiveness, and low-cost, simple solution combustion synthesis method enable large-scale fabrication with consistent quality, making them highly relevant for industrial and next-generation technological applications.</div></div>","PeriodicalId":18240,"journal":{"name":"Materials Science in Semiconductor Processing","volume":"193 ","pages":"Article 109484"},"PeriodicalIF":4.2,"publicationDate":"2025-03-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143683788","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Design strategy and micromachining technology of AT-cut high-frequency quartz resonators: A review","authors":"Fangmeng Xu ,&nbsp;Chunyan Yin ,&nbsp;Jingyu Chen ,&nbsp;Guangbin Dou ,&nbsp;Litao Sun","doi":"10.1016/j.mssp.2025.109465","DOIUrl":"10.1016/j.mssp.2025.109465","url":null,"abstract":"<div><div>Quartz resonators have received attention in communication, timing, and consumer electronics to generate stable signals for reliable data transmission. With the rise of 5G communication, there is an increasing demand for miniaturized quartz resonators with high frequencies. AT-cut quartz crystals are ideal materials for high-frequency quartz resonators due to their excellent frequency stability and low-temperature coefficient. Due to the processing limitations of mechanically thinned AT-cut quartz wafers, the quartz micromachining technology is developed to achieve precise and complex microstructure manipulation. This review begins by discussing the working principles of AT-cut quartz resonators and explores the impacts of mass loading and energy trapping on their electrical performance. Based on these theoretical foundations, this review categorizes various fundamental frequency vibration AT-cut quartz resonator structures including planar, mesa, inverted-mesa, and bi-mesa, and compares their performance metrics. Furthermore, to achieve the above structures, this review outlines the advantages and limitations of different micromachining technologies, including machining, wet etching, deep reactive ion etching, laser micromachining, abrasive jet machining, and electrochemical diacharge maching technologies. Finally, this review addresses the challenges in structural design and highlights innovations in micromachining technologies. By exploring design strategy and micromachining technology, this review aims to provide insights and future directions for AT-cut quartz resonators, focusing on achieving higher frequencies, smaller sizes, and enhanced reliability.</div></div>","PeriodicalId":18240,"journal":{"name":"Materials Science in Semiconductor Processing","volume":"193 ","pages":"Article 109465"},"PeriodicalIF":4.2,"publicationDate":"2025-03-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143683744","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Rapid and sensitive detection of recombinant BK polyomavirus VP1 protein using a molecularly imprinted impedimetric sensor based on poly(o-phenylenediamine)-ZnTeSe@CoCu core/shell quantum dots modified screen-printed gold electrode","authors":"Kirstie Isla Gray ,&nbsp;Kayode Omotayo Adeniyi ,&nbsp;Svetlana Zolotovskaya ,&nbsp;Oluwasesan Adegoke","doi":"10.1016/j.mssp.2025.109495","DOIUrl":"10.1016/j.mssp.2025.109495","url":null,"abstract":"<div><div>BK polyomavirus (BKV) lies latent and asymptomatic within the human populace today. However, when activated, most commonly in renal transplant recipients, the virus replicates within the body causing cell death and eventually organ dysfunction. This work, reports on the novel synthesis, characterization and application of multi-shaped ZnTeSe@CoCu core/shell quantum dots (QDs) for the rapid, ultrasensitive and selective electrochemical impedimetric detection of BKV VP1 protein with surface imprinted poly(o-phenylenediamine)-BKV VP1 protein on screen-printed gold electrode (SPAuE) integrated on a portable hand-held electrochemical device. The QDs were synthesized using a combination of semiconducting metals as the core and the shell layer being composed of electroactive metals, thus, making the QDs material to be both fluorescent and electrochemically conductive. The QDs surface morphology was characterized of spherical, rod, cubic, pentagonal and hexagonal-shaped particles. Electropolymerization via cyclic voltammetry was used to functionalise the QDs/SPAuE surface with molecularly imprinted polymer (MIP) with o-phenylenediamine being used as the functional monomer to imprint the BKV VP1 protein template. Under optimum reaction conditions, impedimetric detection of BKV VP1 protein was achieved using the MIP@QDs/SPAuE within the linear range of 0.1 fg/mL to 100 pg/mL and a detection limit of 0.51 pg/mL was obtained. BKV VP1 protein was successfully detected in human serum and thus proved the potential of the MIP@QDs/SPAuE for BKV VP1 protein detection in complex biological matrix.</div></div>","PeriodicalId":18240,"journal":{"name":"Materials Science in Semiconductor Processing","volume":"193 ","pages":"Article 109495"},"PeriodicalIF":4.2,"publicationDate":"2025-03-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143683787","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"High performance of self-powered Ga2O3:Si/p-GaN heterojunction UV photodetectors","authors":"Thi Kim Oanh Vu ,&nbsp;Hai Bui Van ,&nbsp;Nguyen Xuan Tu ,&nbsp;Nguyen Van Kha ,&nbsp;Bui Thi Thu Phuong ,&nbsp;Nguyen Thi Minh Hien ,&nbsp;Eun Kyu Kim","doi":"10.1016/j.mssp.2025.109479","DOIUrl":"10.1016/j.mssp.2025.109479","url":null,"abstract":"<div><div>High performance ultraviolet (UV) photodetectors have garnered much interest for their wide range of potential in uses. On the basis of this, a self-powered UV photodetectors (PDs) based on β-Ga₂O₃:Si/p-GaN heterojunctions were fabricated by pulsed laser deposition (PLD) system equipped with a neodymium-doped yttrium aluminum garnet (Nd:YAG) laser at wavelength center of 266 nm. Then, the Ga₂O₃ (99.9 %) doped with 0.1 wt% Si was used as source to deposit Ga₂O₃:Si thin films on the p-GaN layer, which were deposited on c-sapphire substrates by sputtering technique. The high quality of β-Ga₂O₃:Si thin films are formed by well controlling the oxygen pressure during deposition, which significantly enhances the device performance. In the self-powered mode with the bias voltage of 0V, the photodetectors fabricated under oxygen pressure of 5 mTorr with low dark current of 0.6 nA, high photoresponsivity and detectivity of 2.44 <span><math><mrow><mo>×</mo></mrow></math></span> 10⁻² A/W and 2.45x10¹¹ cmHz^1/2W, respectively. This study represents one of the initial self-powered UV photodetectors with unique properties, which greatly enhances the progress of multifunctional UV photodetectors.</div></div>","PeriodicalId":18240,"journal":{"name":"Materials Science in Semiconductor Processing","volume":"193 ","pages":"Article 109479"},"PeriodicalIF":4.2,"publicationDate":"2025-03-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143683746","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Impact of pressure on quaternary Heusler alloy LiScNiGe for optoelectronic application","authors":"El Mustapha Hrida ,&nbsp;Soufiane Bahhar ,&nbsp;Abdellah Tahiri ,&nbsp;Mohamed Idiri ,&nbsp;Rodouan Touti ,&nbsp;Abderrahim Jabar ,&nbsp;Mohamed Naji","doi":"10.1016/j.mssp.2025.109497","DOIUrl":"10.1016/j.mssp.2025.109497","url":null,"abstract":"<div><div>In this study, the structural, elastic, mechanical, electronic, optical, and vibrational properties of the quaternary Heusler compound LiScNiGe were investigated using density functional theory (DFT) under pressures ranging from 0 to 100 GPa. The structural analysis shows that as pressure increases, the lattice parameter of LiScNiGe decreases from 6.055 Å to 5.291 Å, indicating its adaptability under stress. At pressures above 30 GPa, the material transitions to a ductile phase with metallic bonding. Notably, LiScNiGe maintains its mechanical and dynamic stability across the entire pressure range, exhibiting anisotropic mechanical behavior. Electronic structure calculations reveal that at ambient pressure, LiScNiGe behaves as a semiconductor with a bandgap, suggesting its potential for thermoelectric, optoelectronic, and photovoltaic applications. The bandgap increases significantly from 0.647 eV to 1.437 eV under pressure, highlighting its tunable electronic properties. Moreover, LiScNiGe demonstrates impressive optical properties, such as a high refractive index, along with notable absorption, reflectivity, and conductivity, indicating its potential as a UV filter. Overall, this study provides a comprehensive understanding of the versatile properties of LiScNiGe and its potential for advanced technological applications under varying pressures.</div></div>","PeriodicalId":18240,"journal":{"name":"Materials Science in Semiconductor Processing","volume":"193 ","pages":"Article 109497"},"PeriodicalIF":4.2,"publicationDate":"2025-03-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143683747","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Sensitizer-controlled charge transfer and optoelectronic properties of thiophene-cyanoacrylic-acid sulfonyl functionalized fragments anchored on TiO2 nanocluster for efficient organic solar cells","authors":"Simplice Koudjina ,&nbsp;Vipin Kumar ,&nbsp;Alioui Abdelaaziz ,&nbsp;Si Mohamed Bouzzine ,&nbsp;Guy Y.S. Atohoun ,&nbsp;Mohamed Hamidi ,&nbsp;Joachim D. Gbenou ,&nbsp;Prabhakar Chetti","doi":"10.1016/j.mssp.2025.109478","DOIUrl":"10.1016/j.mssp.2025.109478","url":null,"abstract":"&lt;div&gt;&lt;div&gt;Herein, a mechanistic molecular engineering strategy was set up to prepare a series of efficient Donor–bridge–Acceptor (D–π–A) sensitizers for dye-sensitized solar cells (DSSCs). The essential core of these dyes is the TCAS&lt;sub&gt;1&lt;/sub&gt; reference, with substantial varying donors on the structural molecular chain. To analyze geometrical, optoelectronic and photovoltaic properties of the considered sensitizers (TCAS&lt;sub&gt;1&lt;/sub&gt;–&lt;sub&gt;6&lt;/sub&gt;), the DFT/TD-DFT approaches were used. The position of the π-Sulfonyl-bridge on the TCAS structure influenced the optoelectronic properties of DSSCs. The TCAS&lt;sub&gt;1&lt;/sub&gt;–&lt;sub&gt;6&lt;/sub&gt; were adsorbed on the Nanocrystalline TiO&lt;sub&gt;2&lt;/sub&gt; cluster surface. The evaluations of the optical charge transfer of TCAS&lt;sub&gt;1&lt;/sub&gt;–&lt;sub&gt;6&lt;/sub&gt; along with different analyses including frontier molecular orbitals (FMOs) and molecular electrostatic potential (MEP) are explored. Indeed, the important parameters including, open-circuit voltage (&lt;span&gt;&lt;math&gt;&lt;mrow&gt;&lt;msub&gt;&lt;mi&gt;V&lt;/mi&gt;&lt;mrow&gt;&lt;mi&gt;o&lt;/mi&gt;&lt;mi&gt;c&lt;/mi&gt;&lt;/mrow&gt;&lt;/msub&gt;&lt;/mrow&gt;&lt;/math&gt;&lt;/span&gt;), fill factor (&lt;span&gt;&lt;math&gt;&lt;mrow&gt;&lt;mi&gt;F&lt;/mi&gt;&lt;mi&gt;F&lt;/mi&gt;&lt;/mrow&gt;&lt;/math&gt;&lt;/span&gt;), short-circuit current density (&lt;span&gt;&lt;math&gt;&lt;mrow&gt;&lt;msub&gt;&lt;mi&gt;J&lt;/mi&gt;&lt;mrow&gt;&lt;mi&gt;s&lt;/mi&gt;&lt;mi&gt;c&lt;/mi&gt;&lt;/mrow&gt;&lt;/msub&gt;&lt;/mrow&gt;&lt;/math&gt;&lt;/span&gt;), light-harvesting efficiency (&lt;span&gt;&lt;math&gt;&lt;mrow&gt;&lt;mi&gt;L&lt;/mi&gt;&lt;mi&gt;H&lt;/mi&gt;&lt;mi&gt;E&lt;/mi&gt;&lt;/mrow&gt;&lt;/math&gt;&lt;/span&gt;), electron injection force (&lt;span&gt;&lt;math&gt;&lt;mrow&gt;&lt;mo&gt;Δ&lt;/mo&gt;&lt;msub&gt;&lt;mi&gt;G&lt;/mi&gt;&lt;mrow&gt;&lt;mi&gt;i&lt;/mi&gt;&lt;mi&gt;n&lt;/mi&gt;&lt;mi&gt;j&lt;/mi&gt;&lt;/mrow&gt;&lt;/msub&gt;&lt;/mrow&gt;&lt;/math&gt;&lt;/span&gt;), dye regeneration force (&lt;span&gt;&lt;math&gt;&lt;mrow&gt;&lt;mo&gt;Δ&lt;/mo&gt;&lt;msub&gt;&lt;mi&gt;G&lt;/mi&gt;&lt;mrow&gt;&lt;mi&gt;r&lt;/mi&gt;&lt;mi&gt;e&lt;/mi&gt;&lt;mi&gt;g&lt;/mi&gt;&lt;/mrow&gt;&lt;/msub&gt;&lt;/mrow&gt;&lt;/math&gt;&lt;/span&gt;), dye recombination energy (&lt;span&gt;&lt;math&gt;&lt;mrow&gt;&lt;mo&gt;Δ&lt;/mo&gt;&lt;msub&gt;&lt;mi&gt;G&lt;/mi&gt;&lt;mrow&gt;&lt;mi&gt;r&lt;/mi&gt;&lt;mi&gt;e&lt;/mi&gt;&lt;mi&gt;c&lt;/mi&gt;&lt;/mrow&gt;&lt;/msub&gt;&lt;/mrow&gt;&lt;/math&gt;&lt;/span&gt;), reorganization energies (&lt;span&gt;&lt;math&gt;&lt;mrow&gt;&lt;mi&gt;λ&lt;/mi&gt;&lt;/mrow&gt;&lt;/math&gt;&lt;/span&gt;), density of states (DOS) and transition density matrix (TDM) maps are estimated to see the effect of π-Sulfonyl-bridge group. Moreover, all of the TCAS&lt;sub&gt;1&lt;/sub&gt;–&lt;sub&gt;6&lt;/sub&gt; dyes showed significant UV–visible absorption and exhibited higher absorption (471–562 nm) compared to the reference TCAS&lt;sub&gt;1&lt;/sub&gt; dye (478 nm). The designed TCAS&lt;sub&gt;6&lt;/sub&gt; dye shows most enhanced optoelectronic characteristics, with higher band gap energy of 2.37 eV, higher dipole moment (&lt;span&gt;&lt;math&gt;&lt;mrow&gt;&lt;mi&gt;μ&lt;/mi&gt;&lt;mo&gt;=&lt;/mo&gt;&lt;mn&gt;10.28&lt;/mn&gt;&lt;mspace&gt;&lt;/mspace&gt;&lt;mi&gt;D&lt;/mi&gt;&lt;mi&gt;e&lt;/mi&gt;&lt;mi&gt;b&lt;/mi&gt;&lt;mi&gt;y&lt;/mi&gt;&lt;mi&gt;e&lt;/mi&gt;&lt;mi&gt;s&lt;/mi&gt;&lt;/mrow&gt;&lt;/math&gt;&lt;/span&gt;), higher maximum absorbance (562 nm), higher excited state lifetime &lt;span&gt;&lt;math&gt;&lt;mrow&gt;&lt;mi&gt;τ&lt;/mi&gt;&lt;mo&gt;=&lt;/mo&gt;&lt;mn&gt;0.201&lt;/mn&gt;&lt;mspace&gt;&lt;/mspace&gt;&lt;mi&gt;n&lt;/mi&gt;&lt;mi&gt;s&lt;/mi&gt;&lt;/mrow&gt;&lt;/math&gt;&lt;/span&gt;, and higher open-circuit voltage &lt;span&gt;&lt;math&gt;&lt;mrow&gt;&lt;msub&gt;&lt;mi&gt;V&lt;/mi&gt;&lt;mrow&gt;&lt;mi&gt;O&lt;/mi&gt;&lt;mi&gt;C&lt;/mi&gt;&lt;/mrow&gt;&lt;/msub&gt;&lt;mo&gt;=&lt;/mo&gt;&lt;mn&gt;1.11&lt;/mn&gt;&lt;mspace&gt;&lt;/mspace&gt;&lt;mi&gt;V&lt;/mi&gt;&lt;/mrow&gt;&lt;/math&gt;&lt;/span&gt; than the other dyes. Furthermore, the similarity of the adsorption energies was observed for all TCAS&lt;sub&gt;1&lt;/sub&gt;–&lt;sub&gt;6&lt;/su","PeriodicalId":18240,"journal":{"name":"Materials Science in Semiconductor Processing","volume":"193 ","pages":"Article 109478"},"PeriodicalIF":4.2,"publicationDate":"2025-03-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143683745","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Engineering of extended peripheral acceptor moieties into imide pyrrole based materials for promising photovoltaic properties: A quantum chemical approach","authors":"Iqra Shafiq ,&nbsp;Gang Wu ,&nbsp;Misbah Azhar ,&nbsp;Iram Irshad ,&nbsp;Rabia Baby ,&nbsp;Norah Alhokbany","doi":"10.1016/j.mssp.2025.109477","DOIUrl":"10.1016/j.mssp.2025.109477","url":null,"abstract":"<div><div>Herein, a series of NFA-based (<strong>DPP1</strong>-<strong>DPP6</strong>) chromophores were designed rationally by altering the terminal acceptors of (<strong>DPPR</strong>) reference chromophore, while retaining the selenophene <em>π</em>-spacer and central acceptor unit (A2) same. DFT and TD-DFT calculations were performed by using the M06/6-311G(d,p) functional to explore their photovoltaic properties. FMOs analysis unveiled that <strong>DPP1</strong>-<strong>DPP6</strong> molecules showed narrow band gaps and broader absorption spectra in the visible range as compared to <strong>DPPR</strong>. The increasing order of <em>λ</em>_max of aforementioned chromophores is found as <strong>DPPR</strong> &lt; <strong>DPP1</strong> &lt;<strong>DPP2</strong> &lt;<strong>DPP6</strong> &lt;<strong>DPP3</strong> &lt;<strong>DPP4</strong> &lt;<strong>DPP5</strong> in chloroform solvent. Particularly, <strong>DPP5</strong> exhibited the maximum absorption peak at 636.105 nm and the lowest transition energy of 1.949 eV, mainly because of terminal electron-withdrawing acceptor groups. Interestingly, all derivatives exhibited lower <em>E</em>_b values (0.597–0.630 eV) compared to the reference (0.636 eV) which implied a faster rate of exciton dissociation and enhanced charge transfer compared to <strong>DPPR</strong>, and further supported by <span>DOS</span> and TDM analyses. Moreover, a notable photovoltaic response in terms of <em>V</em>_<em>oc</em> was observed for all examined compounds, suggesting their potential suitability for future use. Thus, our study urges experimentalists to synthesize these organic systems to achieve high efficiency photovoltaic devices. This work uncovers that introducing groups into NFAs is a fruitful approach for advancing OSCs, and the findings disclosed herein are supportive to designing new NFAs.</div></div>","PeriodicalId":18240,"journal":{"name":"Materials Science in Semiconductor Processing","volume":"192 ","pages":"Article 109477"},"PeriodicalIF":4.2,"publicationDate":"2025-03-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143684441","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"The effect of NaOH on the morphology of dislocation-related pits in SiC during etching in molten eutectic KOH-NaOH","authors":"Lu-lu Yu ,&nbsp;Zhi-li Hu ,&nbsp;Zhen-zhong Wang ,&nbsp;Heng Wang","doi":"10.1016/j.mssp.2025.109437","DOIUrl":"10.1016/j.mssp.2025.109437","url":null,"abstract":"<div><div>Silicon carbide (SiC), a third-generation semiconductor material, has become a prominent research focus in the new energy automobile industry owing to its excellent physical and chemical properties. Ensuring the reliability of SiC power devices necessitates accurate characterization of dislocation defects. This study aims to optimize the molten KOH etching method by adjusting the additive composition to improve the characterization of dislocation defects in SiC substrates and enhance the clarity and stability of etch-pit contours. Optical microscopy (OM) and laser scanning confocal microscopy (LSC) were systematically employed to investigate the effects of the different additives on the etching rate and pit morphology. The specific effects on the etching process were examined by varying the NaOH concentration in the molten eutectic KOH-NaOH solution. The study found that reducing the etching rate helps maintain clear etch pit contours, and that the etching temperature has a more significant effect on the etching rate than the etching duration. Ultimately, a molten eutectic KOH-NaOH etchant with a NaOH concentration of 20 wt% was successfully developed. This etchant ensures a high etching efficiency while maintaining well-defined etch pit contours and accommodates a broader range of etching temperatures and durations. Compared to the conventional method of adding strong oxidizers, the developed 20 wt% NaOH molten eutectic KOH-NaOH etchant offers enhanced safety, cost-effectiveness, and efficiency. This provides a more stable and reliable method for characterizing dislocation defects in SiC, contributing to the advancement of SiC power devices in the new-energy automobile industry.</div></div>","PeriodicalId":18240,"journal":{"name":"Materials Science in Semiconductor Processing","volume":"192 ","pages":"Article 109437"},"PeriodicalIF":4.2,"publicationDate":"2025-03-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143684440","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Synergistic effect of mass and strain field phonon scattering in Bi and Sb co-doped Mg2Si for thermoelectric applications","authors":"S. Karunakaran ,&nbsp;V. Vijay ,&nbsp;S. Harish ,&nbsp;M. Navaneethan ,&nbsp;J. Archana","doi":"10.1016/j.mssp.2025.109452","DOIUrl":"10.1016/j.mssp.2025.109452","url":null,"abstract":"<div><div>Magnesium silicide is considered as a potential thermoelectric material because of its minimal toxicity, widespread availability, and thermal stability which attracted significant attention for mid to high temperature (500–900 K) application. In this study, <em>n</em>-type magnesium silicide samples co-doped with Bi and Sb were synthesized via vacuum melting and hot-pressing method. Polycrystalline nature of the samples was confirmed using High-resolution transmission electron microscopy (HRTEM) analysis, while X-ray diffraction (XRD) analysis confirmed the phase purity. Co-doping of Bi-Sb in Mg₂Si effectively enhanced the carrier concentration to 2 × 10¹⁸ cm⁻³, leading to an improved electrical conductivity of 140 Scm⁻¹. The enhanced Seebeck co-efficient of −168 μVK⁻¹ and improved electrical conductivity greatly increased the power factor in to 327 μWm⁻¹K⁻², which is ∼197 % enhanced when compared to the undoped Mg₂Si sample. In addition, the presence of dislocations raised from Sb and Bi drastically decreased the lattice thermal conductivity to 2.9 Wm⁻¹K⁻¹, resulting in an improved thermoelectric figure of merit of 0.08 at 753 K.</div></div>","PeriodicalId":18240,"journal":{"name":"Materials Science in Semiconductor Processing","volume":"192 ","pages":"Article 109452"},"PeriodicalIF":4.2,"publicationDate":"2025-03-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143684442","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Effect of clay on dielectric behaviour of TiO2 embedded PVDF nanocomposite for charge storage applications","authors":"Sachit K. Das ,&nbsp;Debasrita Bharatiya ,&nbsp;Sudhir Minz ,&nbsp;Ritu Saraswat ,&nbsp;Sarat K. Swain","doi":"10.1016/j.mssp.2025.109480","DOIUrl":"10.1016/j.mssp.2025.109480","url":null,"abstract":"<div><div>The present work involves dielectric properties of PVDF/TiO₂ and PVDF/TiO₂/Clay nanocomposite synthesized via solution casting technique. The increased nucleation density attributed to PVDF, TiO₂ and Cloisite® 30B NPs causes oriented planes that improve the crystallinity of the resultant nanocomposites. The morphological images prove the uniform deposition of TiO₂ and Cloisite® 30B NPs in the ternary nanocomposite. Improved roughness of ternary nanocomposite is observed in AFM images causing huge charge-storing properties in the polymer-based nanocomposite. The highest ε' of PVDF/TiO₂ and PVDF/TiO₂/Clay nanocomposites are achieved as 2 × 10³ and 1.4 × 10⁴ at 1 kHz, respectively. The maximum ε′′ of PFTC-6 nanocomposite is found to be 4.04 at 1 kHz. This giant permittivity of the prepared ternary polymer-based nanocomposite could be a great pathway for the electronic industry. The PVDF/TiO₂ nanocomposite shows maximum σ_ac conductivity of 5.16 × 10⁻⁴ S/m and 5.87 × 10⁻⁴ S/m at 1 kHz and 3 MHz, meanwhile the PVDF/TiO₂/Clay nanocomposite shows maximum σ_ac conductivity of 3.37 × 10⁻³ S/m and 5.16 × 10⁻³ S/m at 1 kHz and 3 MHz, respectively. The high thermal stability and excellent dielectric behaviour of PVDF/TiO₂/Clay nanocomposite prove its worth towards high performance in charge storage and electronic applications.</div></div>","PeriodicalId":18240,"journal":{"name":"Materials Science in Semiconductor Processing","volume":"192 ","pages":"Article 109480"},"PeriodicalIF":4.2,"publicationDate":"2025-03-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143684438","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}