Materials Science in Semiconductor Processing最新文献

{"title":"Unveiling the prospect of copper iodide as hole transporting layer in perovskite solar cell by selective dopant strategy: A review","authors":"O.V. Aliyaselvam ,&nbsp;A.N. Mustafa ,&nbsp;M.A. Azam ,&nbsp;P. Chelvanathan ,&nbsp;M.A. Islam ,&nbsp;S. Mahalingam ,&nbsp;F. Arith","doi":"10.1016/j.mssp.2025.109679","DOIUrl":"10.1016/j.mssp.2025.109679","url":null,"abstract":"<div><div>The burgeoning field of perovskite solar cells (PSCs) continues to attract research interest, particularly with the potential of copper iodide (CuI) as a high-performing hole transport layer (HTL). This review comprehensively examines the intrinsic advantages of solid-state CuI as HTL for PSC applications due to its exceptional p-type conductivity, ambient stability, and ease of synthesis. Moreover, the review explores cutting-edge strategies for mitigating defects to preserve the power conversion efficiency (PCE) and stability of the device including optimization of synthesis, defect engineering through stoichiometry control, interface engineering and doping engineering. Notably, lanthanum (La) doping engineering on CuI demonstrates remarkable potential, offering enhanced structural compatibility due to its ionic size, improved band alignment, and a substantial reduction in deep-level traps contributing to carrier recombination. This groundbreaking doping strategy produces La-doped CuI HTL that addresses the challenges at the perovskite/HTL interface, leading to an elevation in the PCE of the PSCs. As PSC technology advances toward commercial viability, CuI emerges as a linchpin in accelerating progress in the quest for highly efficient and stable solar energy solutions.</div></div>","PeriodicalId":18240,"journal":{"name":"Materials Science in Semiconductor Processing","volume":"197 ","pages":"Article 109679"},"PeriodicalIF":4.2,"publicationDate":"2025-05-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144089571","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Efficiently tribocatalytic water purification of SrSb2O6 ceramic powder with a 3.9 eV high band-gap","authors":"Guoguang Yao ,&nbsp;Xu Gao ,&nbsp;Fanfan Pan ,&nbsp;Luyi Wang ,&nbsp;Hongkai Liu ,&nbsp;Cuijin Pei ,&nbsp;Jin Liu ,&nbsp;Yanmin Jia ,&nbsp;Fu Wang","doi":"10.1016/j.mssp.2025.109690","DOIUrl":"10.1016/j.mssp.2025.109690","url":null,"abstract":"<div><div>Most existing tribocatalysts are semiconductor materials with narrow band-gap, which are unsuitable for investigating the tribocatalytic mechanism. In this work, high band-gap SrSb₂O₆ powders fabricated via solid-state reaction route exhibited obvious tribocatalytic dye-decomposition performance, with a maximum decomposition ratio of 91.5 % for 5.0 mg L⁻¹ Rhodamine B (RhB) dye, 1.0 g L⁻¹ SrSb₂O₆ solutions, and stirring for 6 h with a speed of 400 rpm. The RhB degradation process followed first-order kinetics with the maximum reaction rate constant of 0.38 h⁻¹. Comprehensive experimental results indicates that ·OH radicals are the primary active substances for RhB decomposition. The decomposition routes of RhB during tribocatalysis were determined from identified intermediates. The SrSb₂O₆ catalyst maintained excellent tribocatalytic performance for RhB dyes after five cycles. This study opens up a new perspective about water purification utilizing tribocatalytic effect of high band-gap materials.</div></div>","PeriodicalId":18240,"journal":{"name":"Materials Science in Semiconductor Processing","volume":"197 ","pages":"Article 109690"},"PeriodicalIF":4.2,"publicationDate":"2025-05-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144072516","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Optical properties of SnX (X=S,Se): Insight from independent particle approximation and Bethe Salpeter equation","authors":"Muhammad Asif ,&nbsp;Altaf Ur Rahman ,&nbsp;Gul Rahman ,&nbsp;Imed Boukhris ,&nbsp;M.S. Al-Buriahi ,&nbsp;Zainab Mufarreh Elqahtani","doi":"10.1016/j.mssp.2025.109609","DOIUrl":"10.1016/j.mssp.2025.109609","url":null,"abstract":"<div><div>First-principles calculations based on density functional theory (DFT) are carried out to study the electronic, structural and optical properties of bulk SnX (X = S, Se). The calculated cohesive energy calculations show that bond strength is smaller in SnSe than SnS that makes SnS energetically more stable than SnSe. Electronic band structures show that, both SnS and SnSe are indirect band gap semiconductors with band gap of 1.09 eV and 0.72 eV, respectively. The BSE method combined with IPA is employed to incorporate excitonic effects, accurately capturing the optical response of the materials. The static dielectric constants of SnS and SnSe exhibit directional anisotropy and show a significant increase when excitonic interactions are considered, highlighting the importance of many-body effects in accurately predicting optical properties. The exciton binding energy and Bohr radius are also calculated to assess the strength of electron–hole interactions. The plasmon frequency is found to be larger for SnS as compared with SnSe due to larger carrier density of SnS. It is shown that SnSe has larger refractive index and extinction coefficient than SnS in both IPA and BSE. Most of the light is absorbed in the visible region for both materials. Both materials have efficient absorption in near infrared (IR) and visible range (VR) and maximum in near ultraviolet (UV) range, but SnSe has a little higher absorption coefficient than SnS in visible spectrum region due to smaller band gap than SnS. Overall, BSE under estimates the optical properties in the UV region as compared with IPA. We, therefore, believe that both materials are efficient for photovoltaic applications.</div></div>","PeriodicalId":18240,"journal":{"name":"Materials Science in Semiconductor Processing","volume":"197 ","pages":"Article 109609"},"PeriodicalIF":4.2,"publicationDate":"2025-05-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144072517","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Reduction of Ge MOS interface defects via Al2O3 or trimethylaluminum pre-doping combined with post-oxidation","authors":"Xiaotong Mao ,&nbsp;Yan Li ,&nbsp;Huaizhi Luo ,&nbsp;Haoyan Liu ,&nbsp;Pengfei Yang ,&nbsp;Qingzhu Zhang ,&nbsp;Junshuai Chai ,&nbsp;Fei Zhao ,&nbsp;Yongliang Li","doi":"10.1016/j.mssp.2025.109692","DOIUrl":"10.1016/j.mssp.2025.109692","url":null,"abstract":"<div><div>The reduction of interface defects in Ge metal-oxide-semiconductor (MOS) through Al₂O₃ or Al(CH₃)₃ [trimethylaluminum (TMA)] pre-doping combined with ozone post-oxidation is investigated. The interface defects are mainly caused by Ge sub-oxides (Ge³⁺-O, Ge²⁺-O and Ge¹⁺-O) in interfacial layer (IL). Compared to samples with only ozone oxidation, those subjected to Al₂O₃ pre-doping combined with ozone post-oxidation (AOZ) exhibit better interfacial properties. This improvement is attributed to the reduction in the formation of Ge sub-oxides due to the effective suppression of oxygen diffusion to the substrate by the deposition of Al₂O₃. Samples with TMA pre-doping combined with ozone post-oxidation (TOZ) demonstrate lower interface trap density (D_it) of only 4.6 × 10¹⁰ eV⁻¹ cm⁻², which is attributed to the reduced formation of sub-oxides and Al-O bonds. In these samples, Ge³⁺, Ge²⁺, and Ge¹⁺ are predominantly confined within the Al-O network to form AlGeO_x. Additionally, changing the number of TMA cycles reveals that the TOZ samples can achieve better passivation effects than the AOZ samples under similar or smaller EOT.</div></div>","PeriodicalId":18240,"journal":{"name":"Materials Science in Semiconductor Processing","volume":"197 ","pages":"Article 109692"},"PeriodicalIF":4.2,"publicationDate":"2025-05-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144072514","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Polarity impacts the electrical properties of CuI/ZnO heterojunctions","authors":"R. Yatskiv ,&nbsp;S. Tiagulskyi ,&nbsp;J. Grym ,&nbsp;J. Vaniš ,&nbsp;Š. Kučerová ,&nbsp;S.A. Irimiciuc ,&nbsp;J. Lančok ,&nbsp;S. Chertopalov ,&nbsp;M. Vondráček ,&nbsp;J. Veselý","doi":"10.1016/j.mssp.2025.109670","DOIUrl":"10.1016/j.mssp.2025.109670","url":null,"abstract":"<div><div>Transparent electronics represents a rapidly evolving field of research with numerous applications, including solar cells, photodetectors, thermoelectric devices, and flat panel displays. Utilization of wide-bandgap semiconductors, such as CuI and ZnO, in transparent electronics demonstrates considerable potential. The quality of the interface between CuI and ZnO is determined by various factors, and is crucial for the fabrication of high-quality heterojunctions. This study examines how surface polarity in ZnO influences the interface quality in such heterojunctions. It is experimentally demonstrated that the distinct interactions between CuI and the O- or Zn-polar faces of ZnO induce an uneven development of interface imperfections. CuI deposition on the Zn-polar face of bulk ZnO and ZnO nanorods results in a lower quality heterojunction with a reduced rectification ratio and an increased ideality factor. On the contrary, a lower density of states is observed for the O-polar face, which is reflected in the decreased ideality factor and increased rectification ratio for the CuI/ZnO heterojunction.</div></div>","PeriodicalId":18240,"journal":{"name":"Materials Science in Semiconductor Processing","volume":"197 ","pages":"Article 109670"},"PeriodicalIF":4.2,"publicationDate":"2025-05-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144072515","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"A density functional theory study on the prediction of stable Be9O9 nanoring and its application as an atmospheric gas (CO, NO and NH3) sensor","authors":"Darshil Chodvadiya ,&nbsp;Jay Panchal ,&nbsp;Izabela Zgłobicka ,&nbsp;Krzysztof J. Kurzydłowski ,&nbsp;Prafulla K. Jha","doi":"10.1016/j.mssp.2025.109672","DOIUrl":"10.1016/j.mssp.2025.109672","url":null,"abstract":"<div><div>For the advancement of human civilization, a toxic gas sensor is crucial for detecting and preventing exposure to hazardous gases, ensuring safety, health and environmental protection. In this article, we have predicted a new allotrope of cyclo[18]carbon, namely the beryllium oxide (Be₉O₉) nanoring using Density Functional Theory (DFT). The stability of the Be₉O₉ nanoring is confirmed through formation energy, IR spectra and ab-initio molecular dynamics (AIMD) simulations at 300 and 400 K. Then, we have explored adsorption characteristics of the Be₉O₉ nanoring for atmospheric gases (CO, NO, and NH₃) by analysing adsorption energy (E_ads), density of states, molecular orbitals, charge transfer, molecular electrostatic potential, work function (φ), electrical conductivity and recovery time (τ). Based on E_ads values, a strong interaction is observed between NH₃ and the Be₉O₉ nanoring, while poor interactions are observed between CO and NO molecules and the Be₉O₉ nanoring. The significant change in the dipole moment of the Be₉O₉ nanoring after NH₃ adsorption further confirms these interactions. The findings indicate that Be₉O₉ has potential applications as both “electronic sensor” and “φ-type sensor” for detection of NH₃ molecule. τ calculations indicate that Be₉O₉ could be used for NH₃ removal/storage from the surroundings at 300 K. We aim for this research to inspire experimentalists to synthesize the Be₉O₉ nanoring, similar to cyclo[18]carbon, and explore its utility in sensing application.</div></div>","PeriodicalId":18240,"journal":{"name":"Materials Science in Semiconductor Processing","volume":"196 ","pages":"Article 109672"},"PeriodicalIF":4.2,"publicationDate":"2025-05-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144072148","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Biocompatible reagent-free ZnO nanoparticles with controlled luminescence for anti-counterfeit inks","authors":"Anubhab Sahoo ,&nbsp;Tejendra Dixit ,&nbsp;Anshu Kumari ,&nbsp;Sharad Gupta ,&nbsp;M.S. Ramachandra Rao ,&nbsp;Sivarama Krishnan","doi":"10.1016/j.mssp.2025.109612","DOIUrl":"10.1016/j.mssp.2025.109612","url":null,"abstract":"<div><div>ZnO nanoparticles exhibit remarkable versatility due to their broad spectrum of physical and chemical properties, enabling their use in diverse fields ranging from device fabrication to biomedical applications. To harness their luminescent properties, methods such as doping and chemical synthesis are commonly employed. In this study, we present a novel approach for controlled defect engineering in pristine ZnO nanoparticles via the femtosecond laser ablation technique. Enhanced photoluminescence and cathodoluminescence were achieved in nanoparticles with a similar size distribution as the pulse power was increased from 0.25 W to 1.5 W. Raman spectroscopy confirmed a clear signature of increase in oxygen vacancies correlating with increasing ablation power. Additionally, a mechanism is proposed to explain the change in the deep-level emission observed in the photoluminescence and cathodoluminescence spectra, elucidating the effect of electron beam excitation. Specifically, we demonstrated the photoluminescence emission of ZnO nanoparticles on paper, exhibiting fluorescence in the visible range upon excitation within 270–360 nm. The tunable photoluminescence emission of similarly sized nanoparticles under UV light makes them highly suitable for anticounterfeiting applications.</div></div>","PeriodicalId":18240,"journal":{"name":"Materials Science in Semiconductor Processing","volume":"196 ","pages":"Article 109612"},"PeriodicalIF":4.2,"publicationDate":"2025-05-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144072149","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Synergistic impact of Au/rGO decoration on vertically aligned TiO2 nanorod arrays for advanced plasmonic dye-sensitized solar cells","authors":"T.C. Sabari Girisun,&nbsp;T. Sharmila","doi":"10.1016/j.mssp.2025.109680","DOIUrl":"10.1016/j.mssp.2025.109680","url":null,"abstract":"<div><div>In the pursuit of improving the performance of dye-sensitized solar cells (DSSCs), improving surface area, electrical conductivity and efficient charge separation has been a crucial factor. This study investigates the integration of gold (Au) plasmonics and reduced graphene oxide (rGO) into TiO₂ nanorods (NRs) to advance DSSC performance. A nanohybrid photoanode comprising rutile phase TiO₂ NRs decorated with both rGO and Au was synthesized via hydrothermal method followed by UV irradiation. XRD verified the development of tetragonal rutile TiO₂ nanorods, while Raman and X-ray photoelectron spectroscopy (XPS) evidenced strong interactions among TiO₂, rGO and Au, promoting effective charge carrier transfer and lowered recombination rate. SEM assisted elemental analysis inferred the successful growth of one dimensional TiO₂ nanorods with an average length of 5.20 μm and 194 nm diameter and confirmed the effective decoration of nanorods with rGO and Au. UV–Visible spectra suggests that after Au/rGO decoration, the absorption edge shifts towards the visible area, the bandgap narrows and the visible light response is amplified. Then, the carrier transport properties and the performance of the DSSCs using decorated one-dimensional titanium dioxide nanorods as photoanodes, N719 sensitizer, liquid state electrolyte and Pt counter electrode have been examined utilizing current density-voltage plots attained at the treatment of 100 mW/cm². In comparison to pure TiO₂ NR photoanode, the decoration of Au/rGO onto TiO₂ NRs increased the photocurrent generation [J_sc = 18.22 mA/cm²], photoconversion efficiency [η = 6.74 %] and lowered the charge transfer resistance [R_ct = 8.50 Ω] at the Au/rGO@TiO₂/dye/electrolyte interface. The electrochemical behaviour of the fabricated device has also been analysed using electrochemical impedance spectroscopy and the lifetime of the injected electrons in the nanohybrid photoanode, assessed from the Bode phase plot was found to be 25.23 ms. Thus, the incorporation of rGO and Au enhances the electrical conductivity and plasmonic effects, respectively, leading to superior photovoltaic performance and this innovative approach highlights the potential for enhancing the conversion efficiency of DSSCs by leveraging the synergistic effects of advanced nanomaterials, thereby paving the path for the progress of high performance, efficient solar energy conversion devices.</div></div>","PeriodicalId":18240,"journal":{"name":"Materials Science in Semiconductor Processing","volume":"196 ","pages":"Article 109680"},"PeriodicalIF":4.2,"publicationDate":"2025-05-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144068020","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Optimizing the ferroelectric and piezoelectric performance of polyvinylidene fluoride (PVDF) /glass films using spin coating","authors":"Shalini Selvam ,&nbsp;M. Vaishnavi ,&nbsp;M.S. Ravisankar ,&nbsp;A. Saravanan ,&nbsp;J. Venkatamuthukumar ,&nbsp;A. Babu ,&nbsp;Hamad AL-Lohedan ,&nbsp;Selvaraj Arokiyaraj","doi":"10.1016/j.mssp.2025.109653","DOIUrl":"10.1016/j.mssp.2025.109653","url":null,"abstract":"<div><div>This research investigates optimizing the ferroelectric and piezoelectric performance of polyvinylidene fluoride (PVDF)/Glass films using spin coating by changing morphological structures. Films were prepared at 3000 and 6000 rpm using a 2wt% PVDF solution in Dimethylformamide (DMF). Attenuated Total Reflectance - Fourier Transform Infrared Spectroscopy (ATR-FTIR) analysis indicated both the samples displayed characteristic absorption band corresponded to β and γ phases. Piezo Force Microscopy (PFM) was employed to study the ferroelectric and piezoelectric morphology. The 6000 rpm film exhibited more defined, self-assembled nanodots, indicating superior piezoelectric and ferroelectric properties. Poling with DC voltages up to ±10 V induced a polar gamma phase, leading to assertive ferroelectric behaviour, especially in the 6000 rpm film. The 6000 rpm film demonstrated 180° phase reversals under different poling voltage directions. The piezoelectric coefficients (d₃₃) vary from 3 to 6.3 p.m./V in 3000 and 6000 rpm films. The 6000 rpm film shows promise for applications in ferroelectric storage devices, non-volatile memories and flexible nano generator applications.</div></div>","PeriodicalId":18240,"journal":{"name":"Materials Science in Semiconductor Processing","volume":"196 ","pages":"Article 109653"},"PeriodicalIF":4.2,"publicationDate":"2025-05-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144067922","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Degradation mechanisms of p-GaN gate AlGaN/GaN high electron mobility transistors under power cycling tests","authors":"Yesen Han,&nbsp;Chengbing Pan,&nbsp;Xinyuan Zheng,&nbsp;Yibo Ning,&nbsp;Huiying Li,&nbsp;Lixia Zhao","doi":"10.1016/j.mssp.2025.109674","DOIUrl":"10.1016/j.mssp.2025.109674","url":null,"abstract":"<div><div>In this study, the degradation mechanisms of p-GaN gate AlGaN/GaN high electron mobility transistors (HEMTs) were investigated under power cycling tests (PCTs). The saturation drain current of the p-GaN gate AlGaN/GaN HEMTs decreased and the threshold voltage shifted positively after the PCTs. In addition, we find that not only the thermal resistance of the packaging layers, but also the thermal resistance of the chip in all the p-GaN gate AlGaN/GaN HEMTs increased after the PCTs. By using deep-level transient spectroscopy (DLTS), we find that the concentration of electron traps increased after the PCTs, which may increase the phonon scattering, and the thermal resistance of the chip accordingly. In addition, the electron trapping will deplete the electrons in the two-dimensional electron gas, resulting in the decrease of the saturation drain current and the positive shift of the threshold voltage. These results provide new insights to further improve the long-term reliability of p-GaN gate AlGaN/GaN HEMTs.</div></div>","PeriodicalId":18240,"journal":{"name":"Materials Science in Semiconductor Processing","volume":"196 ","pages":"Article 109674"},"PeriodicalIF":4.2,"publicationDate":"2025-05-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144072200","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}