Materials Science in Semiconductor Processing最新文献_第5页

Innovative polydopamine modified black silicon/Ag substrates for sensitive SERS detection and enhancement mechanism

IF 4.2 3区工程技术

Materials Science in Semiconductor Processing Pub Date : 2025-02-05 DOI: 10.1016/j.mssp.2025.109349

Haobo Wang, Wenfeng Liao, Yuxuan Li, Yuzhi Yi, Chi Yan, Hua Tong, Xiaojun Ye, Xiao Yuan, Cui Liu, Hongbo Li

{"title":"Innovative polydopamine modified black silicon/Ag substrates for sensitive SERS detection and enhancement mechanism","authors":"Haobo Wang, Wenfeng Liao, Yuxuan Li, Yuzhi Yi, Chi Yan, Hua Tong, Xiaojun Ye, Xiao Yuan, Cui Liu, Hongbo Li","doi":"10.1016/j.mssp.2025.109349","DOIUrl":"10.1016/j.mssp.2025.109349","url":null,"abstract":"<div><div>Surface-enhanced Raman scattering (SERS) has gained recognition as a powerful analytical tool due to its exceptional sensitivity in detecting trace molecules, making it invaluable in fields such as environmental monitoring, biomedical diagnostics, and food safety. In this work, we prepared a 3D substrate by modifying black silicon (bSi) with polydopamine (PDA) and subsequently depositing Ag nanoparticles (AgNPs) on the surface. SERS measurements demonstrated that the bSi@PDA@Ag substrate exhibited great sensitivity and uniformity across a range of R6G concentrations, with characteristic peaks clearly identifiable at 10<sup>−8</sup> M concentrations. The results indicate that the bSi@PDA@Ag substrate possesses significant potential for effective SERS detection. The mechanism of the enhanced SERS signals is investigated. The incorporation of PDA improves the adsorption capacity for R6G molecules due to the increased reactive −OH and −NH<sub>2</sub> groups. The density functional theory (DFT) calculations confirmed strong adsorption energies of R6G on the PDA surface, while electric field simulations illustrated localized hot-spots around the AgNPs, crucial for amplifying Raman signals.</div></div>","PeriodicalId":18240,"journal":{"name":"Materials Science in Semiconductor Processing","volume":"190 ","pages":"Article 109349"},"PeriodicalIF":4.2,"publicationDate":"2025-02-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143152337","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Synthesizing C@MFO/CuBi with SPR effect for efficient photocatalytic degradation of tetracycline

IF 4.2 3区工程技术

Materials Science in Semiconductor Processing Pub Date : 2025-02-04 DOI: 10.1016/j.mssp.2025.109362

Yong Jin , Xiangyu Li , Ying Han , Lin Liu , Xupeng Chen , Jie He , Guixiang Teng , Xingang Li , Chun Zhang

{"title":"Synthesizing C@MFO/CuBi with SPR effect for efficient photocatalytic degradation of tetracycline","authors":"Yong Jin , Xiangyu Li , Ying Han , Lin Liu , Xupeng Chen , Jie He , Guixiang Teng , Xingang Li , Chun Zhang","doi":"10.1016/j.mssp.2025.109362","DOIUrl":"10.1016/j.mssp.2025.109362","url":null,"abstract":"<div><div>Surface plasmon resonance can broaden the visible light absorption range of photocatalysts and enhance the separation efficiency of photogenerated electrons and holes. In this paper, a CuBi plasmonic bimetallic material deposited on carbon-coated manganese ferrite nanosheets was synthesized by the sodium borohydride reduction method. This material can degrade 50 ml of 20 mg/L TC solution to 100 % within 60 min, showing strong photocatalytic degradation ability. The degradation rate and kinetic constants of TC are 2 times and 11.58 times of that of pure carbon-coated manganese ferrite, respectively. This demonstrates that the introduction of the CuBi dual-atom surface plasmon resonance (SPR) effect can greatly enhance the photocatalytic degradation performance of the precursor materials. After 5 recoveries, the degradation performance remains basically stable, indicating good stability. DFT calculations suggest that electrons transfer from the CuBi dual atoms to manganese ferrite, which can produce more electrons for photocatalytic reactions, thereby improving its photocatalytic degradation performance.</div></div>","PeriodicalId":18240,"journal":{"name":"Materials Science in Semiconductor Processing","volume":"190 ","pages":"Article 109362"},"PeriodicalIF":4.2,"publicationDate":"2025-02-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143152303","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Mathematical modeling of response dynamics of n-type SnO2-based thick film gas sensor

IF 4.2 3区工程技术

Materials Science in Semiconductor Processing Pub Date : 2025-02-04 DOI: 10.1016/j.mssp.2025.109360

Berkan Atman, Gürkan Karakaş, Yusuf Uludağ

引用次数: 0

Electrochemical sensing potential of novel C2N2 bilayer surface for the detection of toxic analytes

IF 4.2 3区工程技术

Materials Science in Semiconductor Processing Pub Date : 2025-02-03 DOI: 10.1016/j.mssp.2025.109323

Tayyabah Azam , Zaheer Ahmad , Sehrish Sarfaraz , Sajid Mehmood , Khurshid Ayub

{"title":"Electrochemical sensing potential of novel C2N2 bilayer surface for the detection of toxic analytes","authors":"Tayyabah Azam , Zaheer Ahmad , Sehrish Sarfaraz , Sajid Mehmood , Khurshid Ayub","doi":"10.1016/j.mssp.2025.109323","DOIUrl":"10.1016/j.mssp.2025.109323","url":null,"abstract":"<div><div>A novel 2D carbon nitride (C<sub>2</sub>N<sub>2</sub>) bilayer surface owing two atomic layers in a unit cell with semiconducting nature is a new attraction in the adsorption of toxic pollutants and environmental remediation. In this regard, 2D crystalline (C<sub>2</sub>N<sub>2</sub>) bilayer surfaces are potential candidates for the adsorption of chemical warfare agents (phosgene, phosgene oxime and diphosgene) and volatile organic compounds (carbon disulfide, carbon oxysulfide). The complexation behavior of studied analytes on the C<sub>2</sub>N<sub>2</sub> surface has been systematically investigated using non-covalent interactions (NCI), interaction energy, quantum theory of atoms in molecules (QTAIM), electron density difference (EDD), natural bond orbital (NBO) and frontier molecular orbital (FMO) analyses. Interaction energies lying between −6.94 kcal mol<sup>−1</sup> to −19.51 kcal mol<sup>−1</sup> indicate the physisorption concerning toxic analytes on the C<sub>2</sub>N<sub>2</sub> bilayer surface. NCI and QTAIM analyses reveal that the studied pollutants are stabilized over C<sub>2</sub>N<sub>2</sub> surface via weak van der Waals and electrostatic interactions. NCI and QTAIM analyses results are nicely correlated with the interaction energy analysis. Natural bond orbital (NBO) analysis indicates that PhO@C<sub>2</sub>N<sub>2</sub> has the maximum value for transfer of charge, whereas COCl<sub>2</sub>@C<sub>2</sub>N<sub>2</sub> has the least charge transfer value. EDD analysis has further verified these transfer of charge values. The electronic properties are also elaborated based on frontier molecular orbital analysis. The lowest energy gap upon complexation is calculated for COCl<sub>2</sub>@C<sub>2</sub>N<sub>2</sub> complex with an energy gap (H-L) of 4.10 eV. Overall, the key findings might be productive for the scientific community to create an efficient electrochemical sensor using C<sub>2</sub>N<sub>2</sub> bilayer.</div></div>","PeriodicalId":18240,"journal":{"name":"Materials Science in Semiconductor Processing","volume":"190 ","pages":"Article 109323"},"PeriodicalIF":4.2,"publicationDate":"2025-02-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143152302","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Intelligent identification of material removal behavior during scratching of 4H-SiC based on acoustic emission sensing and unsupervised deep learning

IF 4.2 3区工程技术

Materials Science in Semiconductor Processing Pub Date : 2025-02-03 DOI: 10.1016/j.mssp.2025.109358

Ruihao Zhang , Bing Wang , Zhanqiang Liu , Jinfu Zhao , Xiaoping Ren , Pengyang Wang , Liping Jiang

{"title":"Intelligent identification of material removal behavior during scratching of 4H-SiC based on acoustic emission sensing and unsupervised deep learning","authors":"Ruihao Zhang , Bing Wang , Zhanqiang Liu , Jinfu Zhao , Xiaoping Ren , Pengyang Wang , Liping Jiang","doi":"10.1016/j.mssp.2025.109358","DOIUrl":"10.1016/j.mssp.2025.109358","url":null,"abstract":"<div><div>This research presents an intelligent methodology to identify the material removal behavior during scratching of 4H-SiC based on acoustic emission sensing and unsupervised deep learning. A dedicated high speed scratching setup is developed, and the scratching depth is adjusted to selectively activate different material removal modes of 4H-SiC during scratching process. The material removal behavior changes from ductile deformation to brittle fracture with the scratching depth increasing from 50 nm to 400 nm at a constant scratching speed of 20 m/s. To differentiate various acoustic emission sources, an unsupervised convolutional auto-encoder and <em>k</em>-mean clustering methodology is employed. One-dimensional convolutional autoencoder is used for adaptive extraction of acoustic emission signal features, while <em>k</em>-means clustering algorithm is used to analyze material removal modes and damage types based on the extracted signal characteristics. Combined with material removal characterization, the appearance of specific clusters in different scratching tests is leveraged to map acoustic emission data to machining patterns. The results show that different acoustic emission signal features exhibit varying sensitivity to the damage formation during high-speed scratching of 4H-SiC. The parameters of amplitude, energy, and count are identified as the optimal characteristic parameters for distinguishing material removal modes and damage types for 4H-SiC. The acoustic emission sensing and deep learning approach presented in this study can be used to construct a real-time nondestructive tool to characterize and monitor material removal behavior during manufacturing processes.</div></div>","PeriodicalId":18240,"journal":{"name":"Materials Science in Semiconductor Processing","volume":"190 ","pages":"Article 109358"},"PeriodicalIF":4.2,"publicationDate":"2025-02-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143152338","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Binary and ternary compatible NAND/NOR logic-in-memory cell constructed with single-gated feedback field-effect transistors

IF 4.2 3区工程技术

Materials Science in Semiconductor Processing Pub Date : 2025-02-02 DOI: 10.1016/j.mssp.2025.109357

Donghyung Lee , Yunwoo Shin , Jaemin Son , Kyoungah Cho , Sangsig Kim

引用次数: 0

Localized electrochemical deposition manufacturing of copper microwalls based on the control of microanode movement trajectory

IF 4.2 3区工程技术

Materials Science in Semiconductor Processing Pub Date : 2025-02-01 DOI: 10.1016/j.mssp.2025.109350

Qixin Qing, Yanguang Huang, Ting Zhu, Dengguo Xu, Chen Wang

{"title":"Localized electrochemical deposition manufacturing of copper microwalls based on the control of microanode movement trajectory","authors":"Qixin Qing, Yanguang Huang, Ting Zhu, Dengguo Xu, Chen Wang","doi":"10.1016/j.mssp.2025.109350","DOIUrl":"10.1016/j.mssp.2025.109350","url":null,"abstract":"<div><div>Localized electrochemical deposition (LECD) is a promising method for additive manufacturing of three-dimensional (3D) metal microstructures. This study investigated the influence of horizontal and vertical step sizes on the structure of copper microwalls deposited by LECD using a microanode with a 20 μm diameter. The structures of copper microwalls deposited under different horizontal steps were categorized into three types of deposition short-circuit contact modes—vertical short-circuit contact mode, lateral short-circuit contact mode, and mixed deposition mode—to describe the growth mechanism of microwall. These short-circuit contact mode can be changed by adjusting the vertical or horizontal step size. A compact structure and smallest width of copper microwall can only be obtained using the horizontal and vertical step sizes of 3 μm in the lateral short-circuit contact mode. Using the optimal step parameters, the minimum spacing for depositing non-merging digital microstructures composed of copper microwalls is 50 μm. This study is of great significance for 3D manufacturing of metal microstructures using LECD.</div></div>","PeriodicalId":18240,"journal":{"name":"Materials Science in Semiconductor Processing","volume":"190 ","pages":"Article 109350"},"PeriodicalIF":4.2,"publicationDate":"2025-02-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143151795","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Harnessing Z-scheme charge transfer in SnS/ZnWO4 hybrid for efficient methylene blue photodegradation

IF 4.2 3区工程技术

Materials Science in Semiconductor Processing Pub Date : 2025-01-31 DOI: 10.1016/j.mssp.2025.109338

Zulfiqar Ali , Iqra Fareed , Aroosha Saif , Muhammad Danish Khan , Hajira Rehman , Areej Zubair , Hafiza Sadia Anam , Faisal Nawaz , Masood ul Hassan Farooq

{"title":"Harnessing Z-scheme charge transfer in SnS/ZnWO4 hybrid for efficient methylene blue photodegradation","authors":"Zulfiqar Ali , Iqra Fareed , Aroosha Saif , Muhammad Danish Khan , Hajira Rehman , Areej Zubair , Hafiza Sadia Anam , Faisal Nawaz , Masood ul Hassan Farooq","doi":"10.1016/j.mssp.2025.109338","DOIUrl":"10.1016/j.mssp.2025.109338","url":null,"abstract":"<div><div>The degradation of organic pollutants from wastewater is a critical global challenge, as it directly impacts environmental health and sustainability. This investigation reports the successful synthesis of SnS/ZnWO<sub>4</sub> hybrids with varying quantities of ZnWO<sub>4</sub>, confirmed via XRD and FTIR, aimed at enhancing photocatalytic activity for the degradation of organic contaminants. FESEM exhibited porous and stacked structural arrangement for SnS/60 % ZnWO₄ with enhanced active sites to facilitate efficient charge transport. The optical bandgap of SnS/60 % ZnWO₄ was calculated to be 2.57 eV, along with PL analysis indicating reduced recombination rates. Photodegradation tests on methylene blue (MB) revealed that SnS/60 % ZnWO<sub>4</sub> demonstrated exceptional degradation efficiency, achieving 91.7 % removal of MB within 90 min, possessing a rate constant of 0.02352 min⁻<sup>1</sup>. •OH⁻ were identified as the primary reactive species responsible for the degradation process. Furthermore, Mott-Schottky analysis and scavenger tests suggested Z-scheme mechanism that facilitates efficient charge separation and enhanced photocatalytic activity. This research highlights the potential of SnS/ZnWO<sub>4</sub> hybrids in advanced oxidation processes for effective environmental remediation of organic pollutants.</div></div>","PeriodicalId":18240,"journal":{"name":"Materials Science in Semiconductor Processing","volume":"190 ","pages":"Article 109338"},"PeriodicalIF":4.2,"publicationDate":"2025-01-31","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143151796","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Adsorption and electrochemical sensing potential of C3N monolayer for hydrogen containing toxic pollutants

IF 4.2 3区工程技术

Materials Science in Semiconductor Processing Pub Date : 2025-01-31 DOI: 10.1016/j.mssp.2025.109301

Tayyabah Azam , Sehrish Sarfaraz , Tahira Sabeen , Sajid Mahmood , Ahmed Lakhani , Zaheer Ahmad , Khurshid Ayub

{"title":"Adsorption and electrochemical sensing potential of C3N monolayer for hydrogen containing toxic pollutants","authors":"Tayyabah Azam , Sehrish Sarfaraz , Tahira Sabeen , Sajid Mahmood , Ahmed Lakhani , Zaheer Ahmad , Khurshid Ayub","doi":"10.1016/j.mssp.2025.109301","DOIUrl":"10.1016/j.mssp.2025.109301","url":null,"abstract":"<div><div>Searching for suitable surfaces for the sensing of toxic pollutants is an area of continuous interest. In this regard, nitrogen containing surfaces are potential candidates for the adsorption of hydrogen containing toxic pollutants i.e., HF, HCN, H<sub>2</sub>S, PH<sub>3</sub> and NH<sub>3</sub>. Using interaction energy, Ab initio molecular dynamics (AIMD) simulations, quantum theory of atoms in molecules (QTAIM), electron density difference (EDD), natural bond orbital (NBO), non-covalent interactions (NCI), Energy decomposition analysis (EDA) and frontier molecular orbital (FMO) analyses, complexation behavior of the studied analytes on C<sub>3</sub>N surface has been systematically investigated. Interaction energies lying between −6.17 kcal/mol and −14.55 kcal/mol indicate the physisorption of toxic analytes on C<sub>3</sub>N surfaces. NCI and QTAIM analyses reveal that the studied pollutants are stabilized over C<sub>3</sub>N surface via weak van der Waal's and electrostatic interactions. NCI and QTAIM analyses results are nicely correlated with the interaction energy analysis. NBO analysis indicates the highest value of charge transfer in HCN@C<sub>3</sub>N whereas HF@C<sub>3</sub>N has the least charge transfer value. These charge transfer values are further verified through EDD analysis. The electronic properties are also elaborated based on frontier molecular orbital analysis. The lowest energy gap upon complexation is calculated for HF@C<sub>3</sub>N complex with energy gap (H-L) of 0.93 eV. Overall, the key findings might be productive for the scientific community to create an efficient electrochemical sensor using C<sub>3</sub>N monolayer.</div></div>","PeriodicalId":18240,"journal":{"name":"Materials Science in Semiconductor Processing","volume":"190 ","pages":"Article 109301"},"PeriodicalIF":4.2,"publicationDate":"2025-01-31","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143151789","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

High-performance lateral AlGaN/GaN SBDs with multi-anode circular electrode structure

IF 4.2 3区工程技术

Materials Science in Semiconductor Processing Pub Date : 2025-01-30 DOI: 10.1016/j.mssp.2025.109330

Changtong Wu , Ben Cao , Hongbin Zhai , Shanjie Li , Nengtao Wu , Ling Luo , Fanyi Zeng , Guoqiang Li

{"title":"High-performance lateral AlGaN/GaN SBDs with multi-anode circular electrode structure","authors":"Changtong Wu , Ben Cao , Hongbin Zhai , Shanjie Li , Nengtao Wu , Ling Luo , Fanyi Zeng , Guoqiang Li","doi":"10.1016/j.mssp.2025.109330","DOIUrl":"10.1016/j.mssp.2025.109330","url":null,"abstract":"<div><div>In this work, a high power Schottky barrier diode (SBD) based on AlGaN/GaN heterojunction with multi-anode circular electrode structure (MA-SBD) is investigated. The equivalent anode perimeter design greatly reduces the anode area as well as the defects and traps in the GaN buffer layer below the anode, resulting in superior current-voltage (I-V) characteristics and outstanding reliability. Compared to the single-anode circular electrode structure SBD (SA-SBD), the MA-SBD has 68 % less area and achieves a low turn-on voltage (V<sub>ON</sub>) of 0.45 V and a high breakdown voltage (BV) of 390 V, with a significant 29.9 % increase in current density at 3 V. In addition, MA-SBD has better temperature stability due to the low number of electrons trapped in the channel under the thermionic effect and the small variation in the ideal factor (n) and series resistance (R<sub>S</sub>). Furthermore, the MA-SBD has the effect of reducing the current attenuation in the barrier-limited region, resulting in a V<sub>ON</sub> that varies by only 0.01 V even after a bias test of 3600 s at a voltage of −50 V, this demonstrates an excellent long-term reliability.</div></div>","PeriodicalId":18240,"journal":{"name":"Materials Science in Semiconductor Processing","volume":"190 ","pages":"Article 109330"},"PeriodicalIF":4.2,"publicationDate":"2025-01-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143152342","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0