Materials Science in Semiconductor Processing最新文献

{"title":"Effects of copper and silver coated aluminum heat sink on operating performance for COB LED thermal management","authors":"Faruk Aydın ,&nbsp;İsmail Kıyak ,&nbsp;Aslı Spor","doi":"10.1016/j.mssp.2025.110096","DOIUrl":"10.1016/j.mssp.2025.110096","url":null,"abstract":"<div><div>The chip-on-board light-emitting diodes (COB LEDs) convert most of the energy drawn into heat, which causes a temperature increase in the LED chips. Various active and passive cooling systems have been developed to solve thermal management problems. In this study, the effects of different types and heat transfer coefficients of heat sinks deposited with different thicknesses of copper or silver coating on COB LED operating performance were analyzed in practice. Electrolytic coatings of 10, 25 and 40 μm thickness were applied to 6 heat sinks of different sizes made of Etial 150 and 6063 aluminum alloys, and the most suitable coating thickness was calculated for 66 different COB LED-heat sink combinations. The results of two different theoretical calculations, thermal analysis performed with the ANSYS simulation program and experimental application are fully compatible with each other and in general, the optimum thickness was determined as 25 μm for copper-coated heat sinks and 10 μm for silver-coated heat sinks. It was observed that different coating thicknesses reduce the total thermal resistance value and the junction temperature and increase the illuminance level. Furthermore, coating costs, correlation analysis based on optimum coating thickness in COB LED-heat sink combinations, and the effects of geometric parameters on heat transfer and performance of heat sinks are also investigated. Considering the effects of ideal coating thickness on the lifetime, performance, reliability and efficiency of COB LEDs, it can be recommended as an alternative to existing commercial heat sinks in heat spreading applications based on the analysis results in the present study.</div></div>","PeriodicalId":18240,"journal":{"name":"Materials Science in Semiconductor Processing","volume":"201 ","pages":"Article 110096"},"PeriodicalIF":4.6,"publicationDate":"2025-10-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145221418","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Self-rectifying resistive switching behavior and analog characteristics in the Bi0.95Er0.05FeO3/ZnFe2O4 heterostructures","authors":"Wenlong Liu ,&nbsp;Chuangqi Zhang ,&nbsp;Di Li ,&nbsp;Jin Zong ,&nbsp;Jiahua Wei ,&nbsp;Guoqiang Tan ,&nbsp;Qibin Yuan ,&nbsp;Ao Xia ,&nbsp;Fulai Qi ,&nbsp;Xu Xue","doi":"10.1016/j.mssp.2025.110112","DOIUrl":"10.1016/j.mssp.2025.110112","url":null,"abstract":"<div><div>The development of Resistive Random Access Memory (RRAM) devices is expected to drive a revolutionary change in artificial intelligence, especially playing a key role in neuromorphic computing applications. Novel RRAM devices with self-rectifying and analog characteristics have become a research hotspot in current research areas due to their unique electrical characteristics. Here, a remarkable bipolar resistive switching (RS) behavior with the self-rectifying effects and analog characteristics is observed in the (16-x)Bi_0.95Er_0.05FeO₃/(x)ZnFe₂O₄ (BEFO/ZFO; x = 1, 3, 5, 7) heterostructures, which are prepared on FTO substrates using the sol-gel method. The optimal RS behavior is obtained for the x = 3 sample, including endurance over 1000 operations and stable retention up to 5000 s. The conductive mechanisms of the x = 3 devices at high resistance state (HRS) complies with the Space Charge Limited Current (SCLC) model. In contrast, the low resistance state (LRS) is dominated by the Schottky model. The RS behavior is correlated with the changes in the depletion layer width and barrier height at the p-n junction interface. Moreover, the conductivity of the x = 3 sample increases with successive sweeps of the applied voltage, showing favorable analog characteristics, suggesting the (16-x)BEFO/(x)ZFO heterostructures with the self-rectifying effect offer promising prospects for the RRAM devices in realizing neuromorphic applications.</div></div>","PeriodicalId":18240,"journal":{"name":"Materials Science in Semiconductor Processing","volume":"201 ","pages":"Article 110112"},"PeriodicalIF":4.6,"publicationDate":"2025-10-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145221424","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Enhanced electrical performances with HZO/β-Ga2O3 3D FinFET toward highly perceptual synaptic device application","authors":"Seohyeon Park ,&nbsp;Jaewook Yoo ,&nbsp;Seokjin Oh ,&nbsp;Hongseung Lee ,&nbsp;Minah Park ,&nbsp;Seongbin Lim ,&nbsp;Soyeon Kim ,&nbsp;Sojin Jung ,&nbsp;Bongjoong Kim ,&nbsp;Keun Heo ,&nbsp;Taehwan Moon ,&nbsp;TaeWan Kim ,&nbsp;Mengwei Si ,&nbsp;Peide D. Ye ,&nbsp;Hagyoul Bae","doi":"10.1016/j.mssp.2025.110104","DOIUrl":"10.1016/j.mssp.2025.110104","url":null,"abstract":"<div><div>In this study, we have demonstrated a novel high-performance ferroelectric FinFET (Fe-FinFET) that integrates ultra-wide-bandgap (UWBG) beta-gallium oxide (<em>β</em>-Ga₂O₃) channel with an atomic layer deposited (ALD) hafnium zirconium oxide (HZO) ferroelectric layer for the first time, and experimentally validated the effectiveness of the robust <em>β</em>-Ga₂O₃ platform as a memory application. Compared with conventional planar ferroelectric FET (FeFET), the Fe-FinFET exhibits a markedly wider counter-clockwise hysteresis loop in its transfer characteristics, achieving a large memory window (MW) of 13.9 V with a single HZO layer. When normalized to the actual channel width, the Fe-FinFETs show an improved <em>I</em>_ON/<em>I</em>_OFF ratio of 2.3 × 10⁷ and a subthreshold swing value of 110 mV/dec; Y-function method further indicates that the intrinsic mobility is improved to 4.25 × 10² cm²/Vs. The enhanced polarization due to larger electric fields across the ferroelectric layer in Fe-FinFET is validated using Sentaurus TCAD, and this result is further supported by the energy-dependent distribution of interface trap density (<em>D</em>_it) extracted in both forward and reverse sweep directions. After 5 × 10⁶ program/erase (PGM/ERS) cycles, the MW was maintained at 9.2 V, and the retention time was measured up to 3 × 10⁴ s with low degradation. To verify its potential as an artificial synapse, we trained a convolutional neural network (CNN) and achieved an accuracy of 91.7 %. These results establish the HZO/<em>β</em>-Ga₂O₃ Fe-FinFET as a promising candidate for high voltage-enduring, non-volatile memory devices that also offer synaptic functionality for neuromorphic applications.</div></div>","PeriodicalId":18240,"journal":{"name":"Materials Science in Semiconductor Processing","volume":"201 ","pages":"Article 110104"},"PeriodicalIF":4.6,"publicationDate":"2025-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145221422","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Supercritical nitrogen-enhanced interface control for high-frequency T-gate GaN HEMTs fabricated on 8-inch CMOS-compatible wafer","authors":"Po-Tsung Tu ,&nbsp;Hsin-Chu Chen ,&nbsp;Sheng-Yao Chou ,&nbsp;Sheng-Kai Chen ,&nbsp;Yan-Chieh Chen ,&nbsp;Cheng-Hsien Lin ,&nbsp;Po-Chun Yeh ,&nbsp;Jen-Inn Chyi ,&nbsp;Ting-Chang Chang ,&nbsp;Po-Tsung Lee ,&nbsp;Hao-Chung Kuo","doi":"10.1016/j.mssp.2025.110101","DOIUrl":"10.1016/j.mssp.2025.110101","url":null,"abstract":"<div><div>This study demonstrates a large-area, high-performance RF T-gate GaN HEMT fabricated using an 8-inch CMOS back-end-of-line (BEOL)-compatible process. This compatibility enables the efficient integration of GaN-based RF components with CMOS circuits, thereby enhancing overall functionality for next-generation applications in advanced electronics and packaging. To improve the DC and RF performance of the RF device, supercritical fluid nitrogen (SCFN) treatment was applied and optimized at 250 °C for 30 min, effectively reducing trap states on both the AlGaN surface and the AlGaN/GaN interface. Under the optimized condition, the SCFN-treated device exhibited a 21 % increase in maximum drain current (I_DSon,max) by 21 %, a 13 % increase in maximum transconductance (g_m,max), a 59 % reduction in subthreshold swing (SS), and a 40 % reduction in on-resistance (R_on). The device also achieved a notably low drain-induced barrier lowering (DIBL) of 92 mV/V, compared with 175 mV/V for the untreated device. Furthermore, RF performance was substantially improved, with the SCFN-treated device achieving f_T/f_max values of 60/101 GHz—outperforming the 49/72 GHz in untreated devices, at a T-gate length of 0.18 μm. To further clarify these enhancements, a TCAD simulation was conducted to analyze electron trapping in the drift region (gate-drain access region) and its impact on band bending and partial depletion of the two-dimensional electron gas (2DEG). These results provide a comprehensive understanding of the mechanisms driving the observed performance improvement.</div></div>","PeriodicalId":18240,"journal":{"name":"Materials Science in Semiconductor Processing","volume":"201 ","pages":"Article 110101"},"PeriodicalIF":4.6,"publicationDate":"2025-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145220696","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Post-fab porous silicon in silicon-on-insulator substrates for improved radio frequencies performances","authors":"Romain Tuyaerts ,&nbsp;Gilles Scheen ,&nbsp;Khaled Aouadi ,&nbsp;Martin Rack ,&nbsp;Jean-Pierre Raskin","doi":"10.1016/j.mssp.2025.110098","DOIUrl":"10.1016/j.mssp.2025.110098","url":null,"abstract":"<div><div>This article presents a new post-fabrication (post-fab) porous silicon (PSi) integration process adapted to standard-resistivity silicon handle substrates (10–20 Ω⋅cm). The process enables uniform porosification from the wafer backside through to an etch-stop layer beneath the buried oxide (BOX). This process does not involve the frontside and does not exceed 150 °C, ensuring full compatibility with previously fabricated devices. A metallic grid ensures homogeneous current distribution, overcoming the conductivity limitations of standard-resistivity substrates compared to the usual low resistivity substrates used for porous silicon integration. Coplanar waveguides lines are fabricated as test structures, and radio frequency measurements confirm excellent performance, including low permittivity (ϵ_r,eff = 4.3 at 5 GHz), high effective resistivity (&gt;3 kΩ⋅cm at 5 GHz), and low harmonic distortion (H2 = −115 dBm at H1 = 15 dBm). This work demonstrates that post-fab PSi integration can be achieved on CMOS-compatible standard substrates, eliminating contamination risks present with highly doped substrates and making porous silicon integration more straightforward in industrial applications.</div></div>","PeriodicalId":18240,"journal":{"name":"Materials Science in Semiconductor Processing","volume":"201 ","pages":"Article 110098"},"PeriodicalIF":4.6,"publicationDate":"2025-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145221419","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Compositional control and electrical performance of atomic layer deposited Al2O3/TiO2 nanolaminates","authors":"Yuan Xu ,&nbsp;Ying Pan ,&nbsp;Lingshan Gao ,&nbsp;Faqiang Zhang ,&nbsp;Mingsheng Ma ,&nbsp;Jie Liang ,&nbsp;Zhifu Liu","doi":"10.1016/j.mssp.2025.110105","DOIUrl":"10.1016/j.mssp.2025.110105","url":null,"abstract":"<div><div>Nanolaminate Al₂O₃/TiO₂ (ATO) dielectric films were fabricated using atomic layer deposition (ALD) and evaluated as insulating layers in metal-oxide-semiconductor (MOS) capacitors. The TiO₂ content within the nanolaminates was systematically varied to modulating both optical and electrical properties. Precise thickness control and stable growth per cycle (GPC) for each sublayer were achieved at a deposition temperature of 200 °C. Spectroscopic ellipsometry revealed that increasing TiO₂ content led to a higher refractive index and optical dielectric constant, accompanied by a reduction in bandgap (E_g). Microstructural analysis demonstrated that the laminated structure suppressed surface roughness and enhanced interfacial quality. Electrical measurements showed that increasing the TiO₂ fraction enhanced the accumulation capacitance due to its high dielectric constant, but also resulted in higher leakage current, attributed to trap-assisted and Poole-Frenkel (P-F) conduction mechanisms. Notably, the introduction of Al₂O₃ sublayers as insulating barriers effectively suppressed leakage pathways and stabilized charge transport. These findings suggest that the ATO nanolaminate structure is a promising candidate for high-k gate dielectrics in advanced semiconductor applications.</div></div>","PeriodicalId":18240,"journal":{"name":"Materials Science in Semiconductor Processing","volume":"201 ","pages":"Article 110105"},"PeriodicalIF":4.6,"publicationDate":"2025-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145221421","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Preparation of layered double hydroxide NiCoFeCe catalyst and study on its oxygen evolution performance","authors":"Jia-Ye Zhou,&nbsp;Yu-Han Ye,&nbsp;Ji-Ping Tian,&nbsp;Shui-Sheng Li,&nbsp;Xing-Chen Jiang,&nbsp;Qing Zhang,&nbsp;Bin He","doi":"10.1016/j.mssp.2025.110094","DOIUrl":"10.1016/j.mssp.2025.110094","url":null,"abstract":"<div><div>In the field of electrocatalysis, layered double hydroxides (LDH) materials have attracted much attention due to their unique layered structure and abundant active sites, demonstrating excellent electrocatalytic activity in promoting the oxygen evolution reaction. In recent years, cobalt-based LDHs have been considered as very promising candidates, but these materials still face key issues such as low conductivity and poor catalytic activity, making it difficult for them to become qualified substitutes for commercial noble metal catalysts. Therefore, through rational design and development of more efficient and stable cobalt-based layered double hydroxide-based materials, it is of great significance for promoting their practical application in the field of electrocatalysis. This paper uses ZIF-67 as the precursor and introduces Ni, Fe, and Ce ions through ion exchange to generate nanosheet-like NiCoFeCe-LDH catalysts. In a 1.0 M KOH electrolyte, this catalyst exhibits excellent OER performance, with a significantly reduced overpotential under a specific current density of 240 mV at 10 mA/cm². Experimental results show that the introduction of Ce significantly enhances the OER activity of the catalyst, providing a new theoretical perspective and practical basis for the study of optimizing the electrocatalytic performance of MOFs materials by doping rare earth metals.</div></div>","PeriodicalId":18240,"journal":{"name":"Materials Science in Semiconductor Processing","volume":"201 ","pages":"Article 110094"},"PeriodicalIF":4.6,"publicationDate":"2025-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145221420","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Control and tuning of color centers in 4H silicon carbide by application of electric field via Schottky diode","authors":"Erlend Lemva Ousdal ,&nbsp;Marianne Etzelmüller Bathen ,&nbsp;Helton Goncalves de Medeiros ,&nbsp;Augustinas Galeckas ,&nbsp;Piyush Kumar ,&nbsp;Maria I.M. Martins ,&nbsp;Alireza Farzad ,&nbsp;Andrej Kuznetsov ,&nbsp;Ulrike Grossner ,&nbsp;Lasse Vines","doi":"10.1016/j.mssp.2025.110097","DOIUrl":"10.1016/j.mssp.2025.110097","url":null,"abstract":"<div><div>The ability to tune and manipulate the energy and intensity of photons emitted from color centers in semiconductors is of great importance for developing point defect quantum emitters as a platform for future quantum technology (QT) applications. One of the promising materials to realize point defect based QT is silicon carbide (SiC), as it combines a plethora of color center candidates with mature material processing and device fabrication. Here we explore the use of a Schottky diode, fabricated on a highly doped n-type 4H-SiC epitaxial layer, to control and modulate defect-related emission under both forward and reverse bias conditions. Zero phonon lines (ZPLs) from three prominent color centers are investigated: V1, V1’ and V2 assigned to the silicon vacancy, B1 and B2 from the carbon antisite-vacancy pair, and PL4 of the divacancy complex. All the studied defect-related emission wavelengths are found to shift in response to applied bias, but with a varying magnitude and direction of the shift. The electric field-induced variations are assigned to Stark effect and current flow within the device. Furthermore, two unknown defect signatures, labeled K1 and K2, are observed in the vicinity (within 2 meV) of the V2 ZPL and exhibit a strong forward bias dependence. A possible origin related to silicon vacancies perturbed by nearby carbon antisites is discussed.</div></div>","PeriodicalId":18240,"journal":{"name":"Materials Science in Semiconductor Processing","volume":"201 ","pages":"Article 110097"},"PeriodicalIF":4.6,"publicationDate":"2025-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145221425","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"CsF additive enables the efficiency and stability promotion of carbon-based hole-transport-layer-free CsPbI2Br perovskite solar cells","authors":"Di Chang ,&nbsp;Zihan Wu ,&nbsp;Zixian Wang ,&nbsp;Jianlin Chen ,&nbsp;Siyuan Zhang ,&nbsp;Caiyu Pei ,&nbsp;Chi Li ,&nbsp;Siyuan Zhao ,&nbsp;Jiaqing Wang ,&nbsp;Yifei Shi ,&nbsp;Jincheng Huang ,&nbsp;Zhuoyin Peng ,&nbsp;Jian Chen","doi":"10.1016/j.mssp.2025.110108","DOIUrl":"10.1016/j.mssp.2025.110108","url":null,"abstract":"<div><div>The inorganic perovskite solar cells (PSCs) exhibit superior thermal stability to the organic-inorganic hybrid PSCs. However, halide defects with low formation energy are often present at grain boundaries of the inorganic perovskite films. This results in many defects of Pb²⁺ uncoordinated with halides, causing in non-radiative recombination in the films. In this work, cesium fluoride (CsF) was chosen as an additive in the CsPbI₂Br precursor solution, in which Cs⁺ can passivate the A-site vacancy defects in CsPbI₂Br perovskite films; fluoride ion (F⁻) has a smaller ionic radius and is more electronegative than chloride ion (Cl⁻), iodide ion (I⁻), and bromide ion (Br⁻), which may allow it to fit in the smaller spaces in the host lattice, as well as weaken the lattice strain and improve the stability of the desired phase. Based on this strategy, CsF-treated carbon-based hole-transport-layer-free CsPbI₂Br PSCs were obtained with a champion photovoltaic conversion efficiency of 13.45 %, short-circuit current density of 15.15 mA/cm², open-circuit voltage of 1.18 V, and fill factor of 75 %. Meanwhile, the CsF-treated CsPbI₂Br PSCs possessed better environmental stability compared to the un-treated counterpart due to the introduction of the more hydrophobic F⁻. This strategy provides a simple and feasible strategy for the development of efficient and stable inorganic PSCs.</div></div>","PeriodicalId":18240,"journal":{"name":"Materials Science in Semiconductor Processing","volume":"201 ","pages":"Article 110108"},"PeriodicalIF":4.6,"publicationDate":"2025-09-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145220698","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Indoline squaraine dye-based organic photodetectors to boost NIR sensitivity for titanyl phthalocyanine","authors":"Furui Jia ,&nbsp;Dongjun Lv ,&nbsp;Ping Wu ,&nbsp;Nan Gao ,&nbsp;Xiaolei Zhang ,&nbsp;Meijuan Gu ,&nbsp;Yirong Zhu ,&nbsp;Wenxin Zhang ,&nbsp;Mingran Yang ,&nbsp;Xiaolong Li","doi":"10.1016/j.mssp.2025.110107","DOIUrl":"10.1016/j.mssp.2025.110107","url":null,"abstract":"<div><div>In this work, a bulk heterojunction (BHJ) strategy was employed by doping squaraine (SQ2) into Y-type titanyl phthalocyanine (Y-TiOPc), aiming to optimize the device performance by adjusting the doping ratio of SQ2. The results revealed that the photodetector based on [email protected] %SQ2 exhibited excellent optoelectronic performance across a broad spectral range from 365 nm to 940 nm. Under a light intensity of 0.01 mW cm⁻², the device achieved a maximum photoresponsivity (<em>R</em>) of 109,634 mA W⁻¹ at 850 nm, with a corresponding external quantum efficiency (EQE) of 16,004 %. Compared to the Y-TiOPc-based photodetector, the [email protected] %SQ2-based device demonstrated significantly enhanced <em>R</em> and EQE values in the near-infrared (NIR) region, with increases by factors of 7.08 (700 nm), 6.28 (765 nm), 4.92 (850 nm), and 3.47 (940 nm), respectively. Moreover, the device showed a rapid, stable, and reproducible photoresponse. The performance enhancements are mainly attributed to the co-sensitization synergistic enhancement effect between Y-TiOPc and SQ2, as well as the improvement in carrier generation, separation, and transportation brought by the BHJ structure. This study demonstrates that the BHJ approach based on TiOPc and squaraine dye offers an effective strategy for improving photodetector performance by introducing squaraine doping to enhance NIR detection capabilities.</div></div>","PeriodicalId":18240,"journal":{"name":"Materials Science in Semiconductor Processing","volume":"201 ","pages":"Article 110107"},"PeriodicalIF":4.6,"publicationDate":"2025-09-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145220697","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}