Anubhab Sahoo , Tejendra Dixit , Anshu Kumari , Sharad Gupta , M.S. Ramachandra Rao , Sivarama Krishnan
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引用次数: 0
Abstract
ZnO nanoparticles exhibit remarkable versatility due to their broad spectrum of physical and chemical properties, enabling their use in diverse fields ranging from device fabrication to biomedical applications. To harness their luminescent properties, methods such as doping and chemical synthesis are commonly employed. In this study, we present a novel approach for controlled defect engineering in pristine ZnO nanoparticles via the femtosecond laser ablation technique. Enhanced photoluminescence and cathodoluminescence were achieved in nanoparticles with a similar size distribution as the pulse power was increased from 0.25 W to 1.5 W. Raman spectroscopy confirmed a clear signature of increase in oxygen vacancies correlating with increasing ablation power. Additionally, a mechanism is proposed to explain the change in the deep-level emission observed in the photoluminescence and cathodoluminescence spectra, elucidating the effect of electron beam excitation. Specifically, we demonstrated the photoluminescence emission of ZnO nanoparticles on paper, exhibiting fluorescence in the visible range upon excitation within 270–360 nm. The tunable photoluminescence emission of similarly sized nanoparticles under UV light makes them highly suitable for anticounterfeiting applications.
期刊介绍:
Materials Science in Semiconductor Processing provides a unique forum for the discussion of novel processing, applications and theoretical studies of functional materials and devices for (opto)electronics, sensors, detectors, biotechnology and green energy.
Each issue will aim to provide a snapshot of current insights, new achievements, breakthroughs and future trends in such diverse fields as microelectronics, energy conversion and storage, communications, biotechnology, (photo)catalysis, nano- and thin-film technology, hybrid and composite materials, chemical processing, vapor-phase deposition, device fabrication, and modelling, which are the backbone of advanced semiconductor processing and applications.
Coverage will include: advanced lithography for submicron devices; etching and related topics; ion implantation; damage evolution and related issues; plasma and thermal CVD; rapid thermal processing; advanced metallization and interconnect schemes; thin dielectric layers, oxidation; sol-gel processing; chemical bath and (electro)chemical deposition; compound semiconductor processing; new non-oxide materials and their applications; (macro)molecular and hybrid materials; molecular dynamics, ab-initio methods, Monte Carlo, etc.; new materials and processes for discrete and integrated circuits; magnetic materials and spintronics; heterostructures and quantum devices; engineering of the electrical and optical properties of semiconductors; crystal growth mechanisms; reliability, defect density, intrinsic impurities and defects.