Materials Science in Semiconductor Processing最新文献_第6页

Effective p-type doping for leakage current reduction of ZrO2 by employing Sc2O3

IF 4.2 3区工程技术

Materials Science in Semiconductor Processing Pub Date : 2025-03-18 DOI: 10.1016/j.mssp.2025.109485

Jihun Nam , Seungwoo Lee , Hansol Oh , Hanbyul Kim , Yongjoo Park , In-Hwan Baek , Woojin Jeon

{"title":"Effective p-type doping for leakage current reduction of ZrO2 by employing Sc2O3","authors":"Jihun Nam , Seungwoo Lee , Hansol Oh , Hanbyul Kim , Yongjoo Park , In-Hwan Baek , Woojin Jeon","doi":"10.1016/j.mssp.2025.109485","DOIUrl":"10.1016/j.mssp.2025.109485","url":null,"abstract":"<div><div>This study explores the integration of scandium oxide (Sc2O3) as a novel p-type dopant to enhance the performance of zirconium dioxide (ZrO2)-based metal-insulator-metal (MIM) capacitors. Compared to traditional aluminum oxide (Al2O3) inserting layers, Sc2O3 exhibits superior structural compatibility with ZrO2, effectively preserving crystallinity and minimizing grain size degradation. Systematic evaluations reveal that employing Sc2O3 as an inserting layer (IL) prevents significant crystallinity degradation up to a thickness of 1 nm and only slight deterioration at 2 nm. This effect is particularly pronounced in ultrathin ZrO2 films, where Sc2O3 also promotes a transition to the cubic phase, mitigating k-value reduction. Furthermore, Sc3+ doping significantly reduces leakage current without compromising the dielectric constant. Consequently, the Sc2O3-based ZrO2 (ZSZ) structure achieved a minimum equivalent oxide thickness (tox) of 0.71 nm, marking a 5.3 % improvement over pristine ZrO2. These findings establish Sc2O3 as a promising alternative to conventional Al2O3 for advancing high-k dielectric applications.</div></div>","PeriodicalId":18240,"journal":{"name":"Materials Science in Semiconductor Processing","volume":"192 ","pages":"Article 109485"},"PeriodicalIF":4.2,"publicationDate":"2025-03-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143684437","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Effect of Fe-complex catalysts on passivation layer and hydroxyl radical generation during tungsten chemical mechanical planarization

IF 4.2 3区工程技术

Materials Science in Semiconductor Processing Pub Date : 2025-03-18 DOI: 10.1016/j.mssp.2025.109475

Hyunho Kim , Gyuyoung Lee , Seunghwan Lee , Pengzhan Liu , Jongyeong Jeon , Ziyang Wang , Chaerin Park , Jaewon Lee , Hosin Hwang , Chulwoo Bae , Taesung Kim

{"title":"Effect of Fe-complex catalysts on passivation layer and hydroxyl radical generation during tungsten chemical mechanical planarization","authors":"Hyunho Kim , Gyuyoung Lee , Seunghwan Lee , Pengzhan Liu , Jongyeong Jeon , Ziyang Wang , Chaerin Park , Jaewon Lee , Hosin Hwang , Chulwoo Bae , Taesung Kim","doi":"10.1016/j.mssp.2025.109475","DOIUrl":"10.1016/j.mssp.2025.109475","url":null,"abstract":"<div><div>This study investigates the effect of Fe-complex catalysts in improving tungsten chemical mechanical planarization (CMP) by enhancing material removal rate (MRR) and surface quality. EDTA-Fe and citrate-Fe (CTA-Fe) were evaluated against ferric nitrate (Fe(NO3) 3) as reference. The catalysts’ ability to generate hydroxyl radicals via the Fenton reaction and form a tungsten passivation layer (WO3) was evaluated. Results showed CTA-Fe achieved the best CMP performance with an MRR of 766.5 Å/min and a surface roughness (Ra) of 2.51 nm, attributed to continuous hydroxyl radical generation and efficient WO3 layer formation. EDTA-Fe exhibited superior performance in static etch rate (SER) due to rapid initial passivation layer formation but showed lower CMP efficiency with an MRR of 304.4 Å/min and a Ra of 5.49 nm. In addition, Fe-complex catalysts were found to leave less residual iron contamination after CMP compared to Fe(NO3)3. This study elucidates the critical role of hydroxyl radical generation in improving tungsten CMP performance and demonstrates the potential of Fe-complex catalysts for advanced semiconductor manufacturing process.</div></div>","PeriodicalId":18240,"journal":{"name":"Materials Science in Semiconductor Processing","volume":"192 ","pages":"Article 109475"},"PeriodicalIF":4.2,"publicationDate":"2025-03-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143684439","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Process optimization of AlGaN high temperature reactor and multi-physicals calculation

IF 4.2 3区工程技术

Materials Science in Semiconductor Processing Pub Date : 2025-03-17 DOI: 10.1016/j.mssp.2025.109474

Jiadai An , Xianying Dai , Ying Liu , Kama Huang , Dengke Zhang

引用次数: 0

Optimization and photocatalytic degradation of crystal violet dye using Sr-ZnO/activated carbon nanoneedles

IF 4.2 3区工程技术

Materials Science in Semiconductor Processing Pub Date : 2025-03-17 DOI: 10.1016/j.mssp.2025.109481

R. Dhanabal, P. Gomathi Priya

引用次数: 0

Enhanced hydrogenated silicon nitride (SiNx:H) thin film as single layer anti-reflection (SLAR) coating in tunnel oxide passivated contact solar cells

IF 4.2 3区工程技术

Materials Science in Semiconductor Processing Pub Date : 2025-03-16 DOI: 10.1016/j.mssp.2025.109483

Alamgeer , Hasnain Yousuf , Rafi Ur Rahman , Seokjin Jang , Shanza Rehan , Muhammad Quddamah Khokhar , Sangheon Park , Junsin Yi

{"title":"Enhanced hydrogenated silicon nitride (SiNx:H) thin film as single layer anti-reflection (SLAR) coating in tunnel oxide passivated contact solar cells","authors":"Alamgeer , Hasnain Yousuf , Rafi Ur Rahman , Seokjin Jang , Shanza Rehan , Muhammad Quddamah Khokhar , Sangheon Park , Junsin Yi","doi":"10.1016/j.mssp.2025.109483","DOIUrl":"10.1016/j.mssp.2025.109483","url":null,"abstract":"<div><div>This study presents an in-depth investigation into optimizing the silicon nitride (SiNx:H) layer for Tunnel Oxide Passivated Contact (TOPCon) solar cells to enhance overall passivation and efficiency. Focusing on the SiNx:H thin film, our research explores the effects of varying flow rates to achieve an ideal balance between surface passivation and anti-reflective properties. The optimized SiNx:H layer deposited with an NH3/SiH4 flow rate of 1.3 exhibits a refractive index of 2.04 and a carrier lifetime of 625 μs reflecting an excellent passivation quality. However, transmittance of over 96.12 % is achieved with a bandgap of 3.01 eV under the same optimized condition. Using FTIR we observe the hydrogen concentration of SiN-H and Si-H as 8.96 × 1022 cm−3 and 6.74 × 1022 cm−3 indicating correlates with enhanced SiNx:H bonding at 2.04 refractive index. Furthermore, an implied open-circuit voltage (iVoc) of 714 mV contributes to an overall efficiency of 22.84 % of TOPCon solar cell, underscoring the critical role of fine-tuned SiNx:H deposition in minimizing recombination losses. Through this approach, we demonstrate the targeted flow rate adjustments can significantly influence SiNx:H properties, driving improvements in the passivation and optical performance essential for advancing high-efficiency TOPCon solar cells.</div></div>","PeriodicalId":18240,"journal":{"name":"Materials Science in Semiconductor Processing","volume":"192 ","pages":"Article 109483"},"PeriodicalIF":4.2,"publicationDate":"2025-03-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143629334","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Synthesis of novel Fe0.11V2O5.15/g-C3N4 for electrochemical paracetamol detection and electrocatalytic water splitting

IF 4.2 3区工程技术

Materials Science in Semiconductor Processing Pub Date : 2025-03-16 DOI: 10.1016/j.mssp.2025.109468

Shakeel Ahmad , Iqra Fareed , Muhammad Danish Khan , Tahmina Maqsood , Muhammad Saeed Akhtar , Mashal Firdous , Zulfiqar Ali , Yahya Sandali , Muhammad Tahir , Faheem K. Butt

{"title":"Synthesis of novel Fe0.11V2O5.15/g-C3N4 for electrochemical paracetamol detection and electrocatalytic water splitting","authors":"Shakeel Ahmad , Iqra Fareed , Muhammad Danish Khan , Tahmina Maqsood , Muhammad Saeed Akhtar , Mashal Firdous , Zulfiqar Ali , Yahya Sandali , Muhammad Tahir , Faheem K. Butt","doi":"10.1016/j.mssp.2025.109468","DOIUrl":"10.1016/j.mssp.2025.109468","url":null,"abstract":"<div><div>Iron vanadate, when integrated with g-C3N4, exhibits remarkable synergy, enabling the design of high-efficiency materials with superior electrochemical characteristics for diverse applications. In this work, novel Fe0.11V2O5.15/g-C3N4 (FVOCN) nanocomposite was synthesized for dual applications in electrochemical detection of paracetamol and electrocatalytic water splitting. The composites were prepared using co-precipitation method with varying g-C3N4 content and characterized by XRD, FTIR and SEM. Fe0.11V2O5.15 with 40 % g-C3N4 (FVOCN-40) demonstrated enhanced paracetamol detection with a high anodic current of 378 μA and smallest LoD value of 0.67 mM among all. Additionally, electrochemical tests demonstrated superior catalytic performance of FVOCN-40 than pristine Fe0.11V2O5.15 and g-C3N4. Specifically, FVOCN-40 showed an overpotential of 330 mV at 10 mA/cm2 and a low tafel slope of 63 mV dec−1 for OER; while for HER, FVOCN-40 achieved the overpotential of 461 mV. Moreover, FVOCN-40 require merely 1.67 V to reach 10 mA/cm2 for overall water splitting. These results establish FVOCN-40 as a promising multifunctional material for biosensing and energy conversion applications.</div></div>","PeriodicalId":18240,"journal":{"name":"Materials Science in Semiconductor Processing","volume":"192 ","pages":"Article 109468"},"PeriodicalIF":4.2,"publicationDate":"2025-03-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143636785","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Construction of Bi4O5I2/Bi2MoO6 Z-scheme heterojunction with enhanced photocatalytic performance to degrade antibiotics

IF 4.2 3区工程技术

Materials Science in Semiconductor Processing Pub Date : 2025-03-16 DOI: 10.1016/j.mssp.2025.109456

Ming-Rui Chao , Shuwen Hou , Shou-Nian Ding

{"title":"Construction of Bi4O5I2/Bi2MoO6 Z-scheme heterojunction with enhanced photocatalytic performance to degrade antibiotics","authors":"Ming-Rui Chao , Shuwen Hou , Shou-Nian Ding","doi":"10.1016/j.mssp.2025.109456","DOIUrl":"10.1016/j.mssp.2025.109456","url":null,"abstract":"<div><div>This research reports the synthesis procedure and evaluates the photocatalytic efficacy of rod-loaded flower-like Bi4O5I2/Bi2MoO6 (BIB) nanocomposites in the photodegradation process of tetracycline (TC) under simulated sunlight irradiation. The BIB composites were synthesized via a solvothermal approach, and their structural and property characteristics were analyzed using SEM, XRD, TEM, FT-IR, and XPS. The outcomes of photocatalytic degradation experiments demonstrated that the BIB-2 composite manifested the most remarkable photocatalytic activity, under 60 min of irradiation, achieving a TC removal rate of 91.8 %. This enhanced performance might be credited to the formation of a Z-scheme heterojunction, which facilitated the separation and transfer of photogenerated holes and electrons. Electrochemical and optical analyses revealed that BIB-2 had superior charge separation capabilities and absorption of light. Experiments of active species capture and EPR measurements confirmed the pivotal function of superoxide radicals (•O2−) and hydroxyl (•OH) within the degradation process, which may be consistent with the Z-scheme mechanism. Furthermore, BIB-2 demonstrated good stability, maintaining 84.3 % degradation efficiency after four cycles. This study offers significant perspectives on the design of sophisticated photocatalytic materials aimed at environmental restoration and accentuates the potential of BIB composites in addressing antibiotic contaminants present in water sources.</div></div>","PeriodicalId":18240,"journal":{"name":"Materials Science in Semiconductor Processing","volume":"192 ","pages":"Article 109456"},"PeriodicalIF":4.2,"publicationDate":"2025-03-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143629333","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Gas sensing performance of CuO-modified GeTe monolayer for thermal runaway detection in lithium-ion batteries 用于锂离子电池热失控检测的 CuO 改性 GeTe 单层的气体传感性能

IF 4.2 3区工程技术

Materials Science in Semiconductor Processing Pub Date : 2025-03-16 DOI: 10.1016/j.mssp.2025.109466

Xiyang Zhong , Hao Qiao , Yanlin Xiao , Siquan Li , Lijun Yang , Lu-Qi Tao , Ping Wang

{"title":"Gas sensing performance of CuO-modified GeTe monolayer for thermal runaway detection in lithium-ion batteries","authors":"Xiyang Zhong , Hao Qiao , Yanlin Xiao , Siquan Li , Lijun Yang , Lu-Qi Tao , Ping Wang","doi":"10.1016/j.mssp.2025.109466","DOIUrl":"10.1016/j.mssp.2025.109466","url":null,"abstract":"<div><div>Lithium-ion battery thermal runaway releases substantial harmful gases (H2, CO, CO2), posing severe safety risks and economic losses. Developing efficient gas detection methods is critical for battery safety. This study investigates the adsorption behavior of these thermal runaway gases (TRGs) on a CuO-modified GeTe monolayer. The modification reduced the bandgap from 1.215 eV to 0.576 eV, which enhanced interfacial charge transfer and thereby increased adsorption energy for H2 (−0.331 eV to −0.685 eV), CO (−0.423 eV to −0.594 eV), and CO2 (−0.702 eV to −1.129 eV). Electron localization function (ELF) and electron density (ED) analyses revealed physical adsorption dominated by van der Waals forces between CuO-GeTe monolayer and TRGs. At elevated temperatures (e.g., 500 K), the CuO-GeTe monolayer exhibited rapid desorption (Tsp <0.5 s), enabling fast sensing and reusability. Solvent environment tests further demonstrated stable adsorption energy under diverse conditions. These findings highlight CuO-GeTe monolayer's potential for real-time TRG monitoring in safety-critical applications such as electric vehicles.</div></div>","PeriodicalId":18240,"journal":{"name":"Materials Science in Semiconductor Processing","volume":"192 ","pages":"Article 109466"},"PeriodicalIF":4.2,"publicationDate":"2025-03-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143629335","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

DUV-NIR dual-band photodetector based on Ga2O3/GaAs heterogeneous junctions

IF 4.2 3区工程技术

Materials Science in Semiconductor Processing Pub Date : 2025-03-15 DOI: 10.1016/j.mssp.2025.109472

Chenrui Shang , Rongrong Chen , Wei Mi , Jinpei Wang , Qing Li , Jinlong Liang , Xiangcan Kong , Di Wang , Lin'an He , Liwei Zhou , Zhaolong Chen , Jinshi Zhao

{"title":"DUV-NIR dual-band photodetector based on Ga2O3/GaAs heterogeneous junctions","authors":"Chenrui Shang , Rongrong Chen , Wei Mi , Jinpei Wang , Qing Li , Jinlong Liang , Xiangcan Kong , Di Wang , Lin'an He , Liwei Zhou , Zhaolong Chen , Jinshi Zhao","doi":"10.1016/j.mssp.2025.109472","DOIUrl":"10.1016/j.mssp.2025.109472","url":null,"abstract":"<div><div>In this work, we demonstrate dual band vertical heterojunction photodetector realized by integrating Ga2O3 with n-type GaAs. For comparison, we fabricated Ga2O3/GaAs Heterogeneous junction metal-semiconductor-metal photodetectors (MSM PD). The Ga2O3/GaAs devices show two distinct detection peaks in spectral responsivity, one at 255 nm and another at 830 nm. Under the ultraviolet (UV) light illumination at 254 nm, at a biasing voltage of 10 V, an ultra-low dark current (Idark) of 3.5 × 10−9 A, a high photo-to-dark current ratio (PDCR) of 8.7 × 102, a responsivity(R) of ∼25.8 A/W, a specific detectivity (D∗) of 4.2 × 1013 Jones are achieved. And PDCR is 2.7 × 102, R is ∼0.45 A/W and D∗ is 7.3 × 1011 under the infrared(IR) light illumination at 830 nm, at the same biasing voltage of the device. Compared to single-layer Ga2O3 and GaAs MSM PDs, Ga2O3/GaAs devices are capable of responding to the UV/IR bands simultaneously, while increasing the responsivity from 5.9 A/W to 25.8 A/W and the D∗ from 1.7 × 1012 Jones to 4.2 × 1013 Jones under UV irradiation. Meanwhile, the dual-band photodetector based on Ga2O3/GaAs Heterogeneous junctions shows good stability and reproducibility. Our results present a new avenue for designing multifunctional photodetectors, enabling operation in complex environments.</div></div>","PeriodicalId":18240,"journal":{"name":"Materials Science in Semiconductor Processing","volume":"192 ","pages":"Article 109472"},"PeriodicalIF":4.2,"publicationDate":"2025-03-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143629331","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

An effective KOH solution etching method in defect characterization of (100) β-Ga2O3 用于表征 (100) β-Ga2O3 缺陷的有效 KOH 溶液蚀刻方法

IF 4.2 3区工程技术

Materials Science in Semiconductor Processing Pub Date : 2025-03-15 DOI: 10.1016/j.mssp.2025.109470

Xu Gao , Jiaxiang He , Da Liu , Yingying Liu , Yuchao Yan , Defan Wu , Zhu Jin , Ning Xia , Hui Zhang , Deren Yang

{"title":"An effective KOH solution etching method in defect characterization of (100) β-Ga2O3","authors":"Xu Gao , Jiaxiang He , Da Liu , Yingying Liu , Yuchao Yan , Defan Wu , Zhu Jin , Ning Xia , Hui Zhang , Deren Yang","doi":"10.1016/j.mssp.2025.109470","DOIUrl":"10.1016/j.mssp.2025.109470","url":null,"abstract":"<div><div>Chemical etching offers a simple and efficient method for revealing defects in semiconductor materials, highlighting the importance of etchants selection. While H3PO4 is commonly used for defect-selective etching on the (100) surface of β-Ga2O3, its inability to effectively distinguish between different types of defects necessitates the use of alternative etchants, such as alkali solutions. In this work, we investigated the kinetics of defect-selective etching using 30 wt% KOH solution on the (100) surface of β-Ga2O3, determining an activation energy (Ea) of 0.671 eV and establishing an optimal defect-selective etching condition of 110 °C for 1.5 h. Three types of etch pits were observed by Optical Microscope (OM), and subsequently identified as dislocation-, strain- and void-related pits using transmission electron microscopy (TEM) combined with focused ion beam (FIB). Compared to H3PO4, KOH etching enables differentiation of these types defects on (100) surface of β-Ga2O3 directly by OM, offering a more effective and accurate approach for defect revelation. This research presents a novel and efficient method for defects revealing on the (100) plane, highlighting its potential in defects characterization in β-Ga2O3.</div></div>","PeriodicalId":18240,"journal":{"name":"Materials Science in Semiconductor Processing","volume":"192 ","pages":"Article 109470"},"PeriodicalIF":4.2,"publicationDate":"2025-03-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143629330","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0