低毒溶液法制备薄膜太阳能电池用CuSb(S, Se)2吸收层工艺

IF 4.2 3区工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC

Materials Science in Semiconductor Processing Pub Date : 2025-04-17 DOI:10.1016/j.mssp.2025.109579

Rui Wang , Yanchun Yang , Guonan Cui , Lulu Bai , Zhihui Gong , Chengjun Zhu

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引用次数: 0

摘要

CuSb(S, Se)2（CASSe）由于其优异的稳定性、丰富的原料和适合低温制备工艺，在铜基低成本薄膜太阳能电池中具有很大的潜力。本文首次采用绿色正丁酸铵离子溶液法制备了CASSe薄膜太阳能电池。研究了在烧结和硒化条件下制备的薄膜的相纯度、结晶度、形貌和电学性能。通过XRD、拉曼光谱、SEM、C - afm等测试，确定了CASSe薄膜的最佳制备条件为：230℃烧结3 min， 390℃硒化20 min。采用玻璃/Mo/CuSb(S, Se)2/CdS/i-ZnO/ITO/Al作为器件结构，可制成相应的薄膜太阳能电池，其光电转换效率（PCE）为0.14%。虽然器件性能较差，但我们的结论对CASSe材料的开发具有重要意义，补充了绿色溶液法制备CASSe薄膜太阳能电池的空白。

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Regulating preparation process of CuSb(S, Se)2 absorber layer for thin films solar cells via a low-toxic solution method

CuSb(S, Se)₂(CASSe) is known to have great potential for copper-based low-cost thin-film solar cells due to its excellent stability, earth-abundant raw materials, and suitability for the low-temperature preparation process. In this work, CASSe thin-film solar cells were prepared using the green n-butylammonium butyrate ionic solution-based method for the first time. The phase purity, crystallinity, morphology, and electrical properties of films prepared at different conditions (sintering and selenization conditions) were studied. With the help of the XRD, Raman spectra, SEM, and c-AFM measurements, the optimal preparation of CASSe thin film is confirmed at 230 °C for 3 min (sintering condition) and 390 °C for 20 min (selenization condition). Using glass/Mo/CuSb(S, Se)₂/CdS/i-ZnO/ITO/Al as the structure of the device, the corresponding thin film solar cell can be fabricated, which presents a photoelectric conversion efficiency (PCE) of 0.14 %. Although the performance of the device is poor, our conclusions are meaningful in the development of CASSe material, supplementing the blank of preparing CASSe thin film solar cells by the green solution-based method.

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来源期刊

Materials Science in Semiconductor Processing 工程技术-材料科学：综合

CiteScore

8.00

自引率

4.90%

发文量

780

审稿时长

42 days

期刊介绍： Materials Science in Semiconductor Processing provides a unique forum for the discussion of novel processing, applications and theoretical studies of functional materials and devices for (opto)electronics, sensors, detectors, biotechnology and green energy. Each issue will aim to provide a snapshot of current insights, new achievements, breakthroughs and future trends in such diverse fields as microelectronics, energy conversion and storage, communications, biotechnology, (photo)catalysis, nano- and thin-film technology, hybrid and composite materials, chemical processing, vapor-phase deposition, device fabrication, and modelling, which are the backbone of advanced semiconductor processing and applications. Coverage will include: advanced lithography for submicron devices; etching and related topics; ion implantation; damage evolution and related issues; plasma and thermal CVD; rapid thermal processing; advanced metallization and interconnect schemes; thin dielectric layers, oxidation; sol-gel processing; chemical bath and (electro)chemical deposition; compound semiconductor processing; new non-oxide materials and their applications; (macro)molecular and hybrid materials; molecular dynamics, ab-initio methods, Monte Carlo, etc.; new materials and processes for discrete and integrated circuits; magnetic materials and spintronics; heterostructures and quantum devices; engineering of the electrical and optical properties of semiconductors; crystal growth mechanisms; reliability, defect density, intrinsic impurities and defects.