Materials Science in Semiconductor Processing最新文献

{"title":"The adsorption mechanism of (Ni and NiO) doped PtSe2 monolayer to polar gas molecules (CO,NH3 and SO2): A first–principle study","authors":"Song Li,&nbsp;Wenchao Li,&nbsp;Yin Liao,&nbsp;Xingang Chen,&nbsp;Zhipeng Ma,&nbsp;Benxiang Ju","doi":"10.1016/j.mssp.2025.109448","DOIUrl":"10.1016/j.mssp.2025.109448","url":null,"abstract":"<div><div>Some major polar gas molecules (CO, NH₃, and SO₂) pose a serious threat to the smart greenhouse planting environment, so it is urgent to construct effective gas sensors to identify and remove toxic gas molecules. This article establishes different modification models for single-layer PtSe₂ and explores potential gas adsorption selectivity. The adsorption trends and electronic properties of PtSe₂, Ni-PtSe₂, and NiO-PtSe₂ on CO, NH₃, and SO₂ gas molecules were calculated based on first principles. The results showed that the CO/Ni-PtSe₂ adsorption system had the best <em>E</em>_ads (−1.24eV) and <em>Q</em>_t (−0.14e), with a variation in adsorption distance of −0.462 Å, indicating strong selectivity. Secondly, the WF and recovery rate of the SO₂/NiO-PtSe₂ adsorption system are low, making it easy to capture electrons. The NH₃/NiO-PtSe₂ system has advantages over NH₃/Ni-PtSe₂ adsorption. In addition, the hybridization between molecular orbitals and the charge transfer law during adsorption were revealed through Band gap, DOS, CDD and ELF. This work provides a new approach for gas detection of PtSe₂ monolayers doped with Ni and NiO in greenhouses, and will provide guidance for the research of new sensing materials in other fields.</div></div>","PeriodicalId":18240,"journal":{"name":"Materials Science in Semiconductor Processing","volume":"192 ","pages":"Article 109448"},"PeriodicalIF":4.2,"publicationDate":"2025-03-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143548188","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Robustness of the Au/Ni ohmic contact on p-type GaN through microelectronic manufacturing processes","authors":"Quentin Paoli ,&nbsp;Frédéric Cayrel ,&nbsp;Zihao Lyu ,&nbsp;Laurent Barreau ,&nbsp;Daniel Alquier","doi":"10.1016/j.mssp.2025.109429","DOIUrl":"10.1016/j.mssp.2025.109429","url":null,"abstract":"<div><div>GaN is an interesting material for power application but requires increasing process reliability. In this work, Au/Ni ohmic contacts on p-type GaN are studied over a complete process flow representative of a real die fabrication. The impact of passivation and refill layers on the contact quality are investigated. First results reveal that Si based passivation degrades the ohmic behavior whereas Parylene passivation allows to keep the contact integrity. The addition of Al refill layer has only a slight impact on the best I-V characteristics. After a complete stack process, composed of two passivation and two refill layers, only fully Parylene passivated samples lead to an ohmic contact with a quasi-linear I-V response and a corresponding average SCR value of 0.96–2.79 x 10-3 Ω cm².</div></div>","PeriodicalId":18240,"journal":{"name":"Materials Science in Semiconductor Processing","volume":"192 ","pages":"Article 109429"},"PeriodicalIF":4.2,"publicationDate":"2025-03-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143548184","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"High-efficiency fiber-shaped dye-sensitized solar cells with cost-effective ZnCo2O4/Carbon fiber counter electrodes for low-light environments","authors":"Saleh Saad Yousef Hayek ,&nbsp;Normurot Fayzullaev ,&nbsp;Mohammed Asiri ,&nbsp;Prakash Kanjariya ,&nbsp;Rekha M. M ,&nbsp;Piyus Kumar Pathak ,&nbsp;Tushar Aggarwal ,&nbsp;Mayada Ahmed Abass ,&nbsp;Mohammed Yaqob","doi":"10.1016/j.mssp.2025.109432","DOIUrl":"10.1016/j.mssp.2025.109432","url":null,"abstract":"<div><div>Fiber-shaped dye-sensitized solar cells (FDSSCs) represent a promising frontier in solar energy due to their unique flexibility, lightweight form, and adaptability for wearable electronics and integrated textile-based applications. In this study, we aim to enhance the efficiency and cost-effectiveness of FDSSCs by developing a platinum-free counter electrode that maintains high performance under various light conditions. We utilized the hydrothermal method to grow ZnCo₂O₄ (ZCO) nanostructures on carbon fibers (CF), forming a composite (CF/ZCO) counter electrode as a sustainable alternative to platinum, traditionally used but costly and prone to stability issues. Our FDSSCs with CF/ZCO counter electrodes achieved an efficiency of 8.3 %, demonstrating an 8 % improvement over conventional platinum electrodes. Importantly, these cells retained excellent performance under low-light conditions, achieving more than 9 % efficiency, making them highly suitable for indoor and wearable applications. The high electrocatalytic activity of the CF/ZCO counter electrode was confirmed through electrochemical analyses (EIS, CV, and Tafel polarization), indicating superior charge transport properties over Pt. Structural and morphological characterizations (XRD, Raman, FESEM, HRTEM, and EDS) confirmed the uniformity and quality of the CF/ZCO nanostructures. By replacing platinum with low-cost, non-toxic ZCO, this study contributes to the advancement of sustainable, flexible solar technologies, paving the way for FDSSCs to power next-generation wearable and integrated devices.</div></div>","PeriodicalId":18240,"journal":{"name":"Materials Science in Semiconductor Processing","volume":"192 ","pages":"Article 109432"},"PeriodicalIF":4.2,"publicationDate":"2025-03-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143534248","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Optimizing the resistive switching performance of sputter-deposited Gd2Hf2O7 thin films via thermal treatment","authors":"Chieh-Wen Lin,&nbsp;Ricky W. Chuang,&nbsp;Cheng-Liang Huang","doi":"10.1016/j.mssp.2025.109443","DOIUrl":"10.1016/j.mssp.2025.109443","url":null,"abstract":"<div><div>A resistive random-access memory (RRAM) device based on Gd₂Hf₂O₇ thin films was fabricated using the sputtering technique, and the effect of thermal treatment on its resistive switching performance was systematically studied. The defect-fluorite structure of Gd₂Hf₂O₇ inherently contains oxygen vacancies, which facilitate the formation of effective conductive filaments. Optimized thermal treatment significantly improved the resistive switching performance by regulating the oxygen vacancy content, resulting in a forming-free device. The Al/Gd₂Hf₂O₇/ITO RRAM device annealed at 300 °C exhibited forming-free behavior, a switching endurance of 924 cycles, and a high-resistance state (HRS)/low-resistance state (LRS) ratio exceeding 10¹. Furthermore, it demonstrated a retention time of over 10⁴ s at both room temperature and 85 °C, highlighting its excellent reliability as an RRAM device. Additionally, post-metal annealing reduced the operating voltage to −1.50 V/1.09 V and increased the switching endurance to 1047 cycles. This enhancement is attributed to the development of a thicker AlO_x interface layer, along with the diffusion of In ions and trace amounts of Al ions into the film.</div></div>","PeriodicalId":18240,"journal":{"name":"Materials Science in Semiconductor Processing","volume":"192 ","pages":"Article 109443"},"PeriodicalIF":4.2,"publicationDate":"2025-03-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143534249","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Investigation of structural transition and indirect-direct bandgap tuning of Cs2AuIAuIIIX6 (X = Cl, Br, I) via single-atom doping","authors":"Rongjian Sa ,&nbsp;Kaixin Cao ,&nbsp;Huiling Zhang ,&nbsp;Lanhua Wu ,&nbsp;Xiaowei Dai ,&nbsp;Diwen Liu","doi":"10.1016/j.mssp.2025.109447","DOIUrl":"10.1016/j.mssp.2025.109447","url":null,"abstract":"<div><div>Perovskite materials have captured research attention in recent years because of their potential use in photovoltaic (PV) applications. Herein, we have performed an examination of structural transition and indirect-direct band gap tuning of mixed-valence halide perovskites Cs₂Au^IAu^IIIX₆ (X = Cl, Br, I) via single-atom doping to determine their suitability for PV applications. The tetragonal-to-tetragonal phase transition is demonstrated from Cs₂Au^IAu^IIIX₆ to Cs₂Ag^I_0.5Au^I_0.5Au^IIIX₆, and an indirect-direct band gap tuning is further observed for Cs₂Ag^I_0.5Au^I_0.5Au^IIIX₆ (X = Cl and Br). Three doped perovskites are revealed to be dynamically and mechanically stable. From an analysis of mechanical properties, they are ductile materials. The appropriate band gaps for Cs₂Ag^I_0.5Au^I_0.5Au^IIICl₆, Cs₂Ag^I_0.5Au^I_0.5Au^IIIBr₆, and Cs₂Ag^I_0.5Au^I_0.5Au^IIII₆ are predicted to be 1.276 eV, 1.057 eV and 1.078 eV, respectively. Further analysis of the reflectance and energy loss spectra shows relatively low peaks in the visible region. Meanwhile, the strong optical anisotropy and high visible absorption are illustrated. Overall, our study unveils that Cs₂Ag^I_0.5Au^I_0.5Au^IIIX₆ (X = Cl, Br, I) halide perovskites are highly expected to be viable alternatives for efficient solar energy conversion.</div></div>","PeriodicalId":18240,"journal":{"name":"Materials Science in Semiconductor Processing","volume":"192 ","pages":"Article 109447"},"PeriodicalIF":4.2,"publicationDate":"2025-03-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143534252","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Enhanced photocatalytic activity of Sn3O4/TiO2 heterostructures for Cr(Ⅵ) reduction and isoniazid degradation","authors":"Yuxin Tian ,&nbsp;Wei Zhang ,&nbsp;Xiaodong Li ,&nbsp;Xiaotong Yin ,&nbsp;Yu Liu ,&nbsp;Shi Su ,&nbsp;Qiushi Wang ,&nbsp;Lina Zhang","doi":"10.1016/j.mssp.2025.109441","DOIUrl":"10.1016/j.mssp.2025.109441","url":null,"abstract":"<div><div>The utilization of photocatalytic technology to degrade contaminants such as heavy metals and antibiotics holds immense significance. Nevertheless, the pursuit of highly efficient photocatalysts remains a formidable challenge. Herein, a series of Sn₃O₄/TiO₂ (ST) hybrid photocatalysts composed of TiO₂ nanoparticles (NPs) and Sn₃O₄ nanosheets (NSs) have been designed and constructed to enhance the reduction of Cr(VI) and the degradation of ISN. TiO₂ NPs were loaded onto the 2D layered flowerlike Sn₃O₄ NSs uniformly through a solvothermal approach, resulting in unique three-dimensional (3D) heterostructures. As expected, all ST composites exhibit higher degradation activity compared to pristine Sn₃O₄ and TiO₂. The optimal ST-0.6 composite (with a TTIP amount of 0.6 g) possesses the highest degradation rate, achieving a 99.6 % removal for Cr(Ⅵ) within 60 min under Xenon light irradiation, with a rate constant (<em>k</em>) of 0.091 min⁻¹. This performance surpasses that of pristine Sn₃O₄ and TiO₂, which have rate constants of 0.0199 min⁻¹ and 0.0186 min⁻¹. Additionally, the ST-0.6 composite effectively removes 72.8 % for isoniazid (ISN) within 80 min. It exhibits the highest photodegradation rate of 0.014 min⁻¹, being 1.3 and 140 times higher than that of TiO₂ (0.0107 min⁻¹) and Sn₃O₄ (0.0001 min⁻¹), respectively. Furthermore, the photocatalytic degradation activities of the recovered samples retain their photocatalytic degradation performance after three consecutive experimental cycles, indicating relatively excellent durability. According to the photocatalytic and characterization results, the significantly enhanced photoactivity of the ST hybrid photocatalyst is attributed to the increased reaction sites, improved light-harvesting properties, and enhanced separation and transfer efficiency of photogenerated electrons and holes within the ST heterostructures.</div></div>","PeriodicalId":18240,"journal":{"name":"Materials Science in Semiconductor Processing","volume":"192 ","pages":"Article 109441"},"PeriodicalIF":4.2,"publicationDate":"2025-03-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143534251","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Deciphering the structural and electrical properties of Ce and Ta ion-doped Bi3Ti1.5W0.5O9 bismuth layered piezoelectric ceramics","authors":"Benjin Xu,&nbsp;Xiangping Jiang,&nbsp;Renfen Zeng,&nbsp;Xin Nie,&nbsp;Chao Chen,&nbsp;Xiaokun Huang,&nbsp;Na Tu,&nbsp;Yunjing Chen,&nbsp;Chong Zhao","doi":"10.1016/j.mssp.2025.109442","DOIUrl":"10.1016/j.mssp.2025.109442","url":null,"abstract":"<div><div>The component-structure-property relationship of Bi_3-<em>x</em>Ce_<em>x</em>Ti_{1.5-<em>x</em>}Ta_<em>x</em>W_0.5O₉(BTW-<em>x</em>CeTa) bismuth layered ceramics prepared by the solid-phase method has been subjected to a comprehensive and systematic investigation. In response to the demand for high-performance bismuth layered piezoelectric ceramics, we doped Ce and Ta ions, resulting in a significant enhancement of both the piezoelectric performance (<em>d</em>₃₃) and the Curie temperature (<em>T</em>_<em>C</em>) in BTW-0.06CeTa ceramics. The results of XRD and its refinement data demonstrate the successful synthesis of BTW phases with a reduced degree of orthorhombic phase. The introduction of Ce and Ta ions disrupts the long-range ordering, leading to the refinement of the original macroscopic domains into highly flexible and responsive microdomains. The favorable resistivity and impedance provide a robust foundation for the complete polarization of the ceramic. The 180° domains facilitate a reduction in interior stress, thereby enhancing the remanent polarization (<em>P</em>_<em>r</em>). This work further reveals the origin of high piezoelectric properties in BTW ceramics. The BTW-0.06CeTa ceramic showed higher performance compared to the BTW ceramic. Specifically, a high <em>d</em>₃₃ value of 20.2 pC/N was obtained, which is an increase of 169 % compared to the undoped sample. A higher <em>T</em>_<em>C</em> value (734 °C) was maintained, dielectric loss (tan<em>δ</em>) at 500 °C was 0.15 (29 % optimized), and resistivity (<em>ρ</em>) was 7.9 × 10⁵ Ω cm. This study demonstrates the potential of BTW piezoelectric ceramics for high-temperature applications.</div></div>","PeriodicalId":18240,"journal":{"name":"Materials Science in Semiconductor Processing","volume":"192 ","pages":"Article 109442"},"PeriodicalIF":4.2,"publicationDate":"2025-03-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143534250","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Redox-active Co3O4/MgV2O5 heterostructure with abundant reaction sites for aqueous asymmetric supercapacitor: Insight into charge storage capacity via Dunn's modeling","authors":"Seemab Hussnain ,&nbsp;Muhammad Ramzan Khawar ,&nbsp;Hafiz Talha Hasnain Rana ,&nbsp;Naveed Akhtar Shad ,&nbsp;Muhammad Khawar Abbas ,&nbsp;Munirah D. Albaqami ,&nbsp;Awais Ahmad ,&nbsp;Sumin Cho ,&nbsp;Yasir Javed ,&nbsp;Dongwhi Choi","doi":"10.1016/j.mssp.2025.109412","DOIUrl":"10.1016/j.mssp.2025.109412","url":null,"abstract":"<div><div>Batteries and supercapacitors are promising energy storage devices to meet the current demand of energy storage demands. Unfortunately, batteries do not retain high cyclic performance as well as power density. On the other hand, supercapacitors retain high cyclic stability but less energy density. Benefiting from the charge storage mechanism of these two devices, the composite material of transition oxide and vanadate is proposed to boost up the specific capacity power density and cyclic stability. Due to the high theoretical capacity of cobalt oxide and high conductivity of magnesium vanadate is selected as the key component materials of composite material. The formation of material composition is confirmed by using the X-ray diffraction technique and tunneling electron microscopy which revealed the successful heterostructure. The morphological assessment revealed that highly dispersed cobalt oxide in magnesium vanadate flakes leads to the increase in overall capacitance (495 C/g) of the composite material in comparison with the Co₃O₄ and MgV₂O₅ which shows 88 C/g and 43 C/g at 1 A/g Current density respectively. Further, the cooperation of cobalt oxide led to improved EDLC behavior thus improving the power density. The highest specific capacity may be due to the shorter diffusion time (0.09 s) of ionic species for intercalation into electrode material. Moreover, highly dispersed cobalt oxide in magnesium vanadate provides more reaction sites due to the presence of multi-redox species with different valence states (Co⁺³, Co⁺⁴, Mg⁺³, Mg⁺⁴) and high surface area which results in high specific capacitance. Moreover, the fabricated prototype device demonstrates an excellent power density of 13200 W/kg at 5 A/g^. Also, the device can successfully deliver 8.9 Wh/kg with 92 % coulombic efficiency and 90 % cyclic retention after 2000 cycles. The fabricated Co₃O₄/MgV₂O₅//AC device operated the commercial calculator, indicating the practical viability of the device.</div></div>","PeriodicalId":18240,"journal":{"name":"Materials Science in Semiconductor Processing","volume":"192 ","pages":"Article 109412"},"PeriodicalIF":4.2,"publicationDate":"2025-03-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143529644","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"The dissolution behavior of oxygen precipitates under high temperature annealing in 300 mm Czochralski silicon","authors":"Hao Wang ,&nbsp;Yun Liu ,&nbsp;Zhongying Xue ,&nbsp;Xing Wei","doi":"10.1016/j.mssp.2025.109436","DOIUrl":"10.1016/j.mssp.2025.109436","url":null,"abstract":"<div><div>In this paper, the factors affecting the dissolution behavior oxygen precipitates in 300 mm Czochralski silicon during high-temperature annealing were quantitatively investigated. By combining gaseous HCl etching with localized light scattering and scanning electron microscopy, we established the relationship between the latex spherical equivalent size of the etch pits and the actual size of the corresponding oxygen precipitates. This method could not only detect nanoscale oxygen precipitates, but also obtain the number and size distribution of oxygen precipitates by a single scan, thus providing a reliable means to compare the changes in the density and size of oxygen precipitates before and after annealing. Furthermore, considering the injection of self-interstitial atoms during the oxidation process and the out-diffusion of oxygen atoms in wafers, we used the classical nucleation model to calculate the critical size of oxygen precipitates along the depth direction, which was proved to be consistent with the experimental results. These findings enhance the understanding of oxygen precipitates dissolution mechanisms and provide valuable guidance for the optimization of annealing conditions and crystal growth conditions.</div></div>","PeriodicalId":18240,"journal":{"name":"Materials Science in Semiconductor Processing","volume":"192 ","pages":"Article 109436"},"PeriodicalIF":4.2,"publicationDate":"2025-03-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143534247","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"The impact of silicon doping on the photocatalytic properties of t-graphene","authors":"K. Ribag ,&nbsp;M. Houmad ,&nbsp;A. Toumlilin ,&nbsp;M. El Moudni ,&nbsp;A. El Kenz ,&nbsp;A. Benyoussef","doi":"10.1016/j.mssp.2025.109434","DOIUrl":"10.1016/j.mssp.2025.109434","url":null,"abstract":"<div><div>The study explores the effects of silicon doping on the optical, electrical, and photocatalytic characteristics of monolayer t-graphene. We used two approximations: the modified Tran-Blaha Becke-Johnson (TB-mBJ) exchange potential and the Tran and Blaha generalized gradient approach (TB-GGA) by the full-potential linearized augmented plane wave method. These approximations are implemented in the Wien2k code. The results demonstrate that silicon doping dramatically modifies and enhances t-graphene's band gap and electrical conductivity. The band gap widens when silicon concentration rises, enhancing silicon's potential application in photocatalytic applications. More precisely, by increasing the band gap, a higher silicon concentration increases the range of applications for silicon in photocatalytic. The conduction band minimum (CBM) of Si-doped t-graphene reduces by 0.29 eV, 0.58 eV, and 1.01 eV at 37.5 %, 25 %, and 12.5 % doping levels, respectively, in comparison to 50 % Si-doped t-graphene. The findings show that silicon doping significantly changes the band gap and increases the electrical conductivity of t-graphene. More specifically, a higher concentration of silicon results in a wider band gap and more uses for photocatalytic applications.</div></div>","PeriodicalId":18240,"journal":{"name":"Materials Science in Semiconductor Processing","volume":"192 ","pages":"Article 109434"},"PeriodicalIF":4.2,"publicationDate":"2025-03-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143529645","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}