Materials Science in Semiconductor Processing最新文献

{"title":"Investigation of structural transition and indirect-direct bandgap tuning of Cs2AuIAuIIIX6 (X = Cl, Br, I) via single-atom doping","authors":"Rongjian Sa ,&nbsp;Kaixin Cao ,&nbsp;Huiling Zhang ,&nbsp;Lanhua Wu ,&nbsp;Xiaowei Dai ,&nbsp;Diwen Liu","doi":"10.1016/j.mssp.2025.109447","DOIUrl":"10.1016/j.mssp.2025.109447","url":null,"abstract":"<div><div>Perovskite materials have captured research attention in recent years because of their potential use in photovoltaic (PV) applications. Herein, we have performed an examination of structural transition and indirect-direct band gap tuning of mixed-valence halide perovskites Cs₂Au^IAu^IIIX₆ (X = Cl, Br, I) via single-atom doping to determine their suitability for PV applications. The tetragonal-to-tetragonal phase transition is demonstrated from Cs₂Au^IAu^IIIX₆ to Cs₂Ag^I_0.5Au^I_0.5Au^IIIX₆, and an indirect-direct band gap tuning is further observed for Cs₂Ag^I_0.5Au^I_0.5Au^IIIX₆ (X = Cl and Br). Three doped perovskites are revealed to be dynamically and mechanically stable. From an analysis of mechanical properties, they are ductile materials. The appropriate band gaps for Cs₂Ag^I_0.5Au^I_0.5Au^IIICl₆, Cs₂Ag^I_0.5Au^I_0.5Au^IIIBr₆, and Cs₂Ag^I_0.5Au^I_0.5Au^IIII₆ are predicted to be 1.276 eV, 1.057 eV and 1.078 eV, respectively. Further analysis of the reflectance and energy loss spectra shows relatively low peaks in the visible region. Meanwhile, the strong optical anisotropy and high visible absorption are illustrated. Overall, our study unveils that Cs₂Ag^I_0.5Au^I_0.5Au^IIIX₆ (X = Cl, Br, I) halide perovskites are highly expected to be viable alternatives for efficient solar energy conversion.</div></div>","PeriodicalId":18240,"journal":{"name":"Materials Science in Semiconductor Processing","volume":"192 ","pages":"Article 109447"},"PeriodicalIF":4.2,"publicationDate":"2025-03-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143534252","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Enhanced photocatalytic activity of Sn3O4/TiO2 heterostructures for Cr(Ⅵ) reduction and isoniazid degradation","authors":"Yuxin Tian ,&nbsp;Wei Zhang ,&nbsp;Xiaodong Li ,&nbsp;Xiaotong Yin ,&nbsp;Yu Liu ,&nbsp;Shi Su ,&nbsp;Qiushi Wang ,&nbsp;Lina Zhang","doi":"10.1016/j.mssp.2025.109441","DOIUrl":"10.1016/j.mssp.2025.109441","url":null,"abstract":"<div><div>The utilization of photocatalytic technology to degrade contaminants such as heavy metals and antibiotics holds immense significance. Nevertheless, the pursuit of highly efficient photocatalysts remains a formidable challenge. Herein, a series of Sn₃O₄/TiO₂ (ST) hybrid photocatalysts composed of TiO₂ nanoparticles (NPs) and Sn₃O₄ nanosheets (NSs) have been designed and constructed to enhance the reduction of Cr(VI) and the degradation of ISN. TiO₂ NPs were loaded onto the 2D layered flowerlike Sn₃O₄ NSs uniformly through a solvothermal approach, resulting in unique three-dimensional (3D) heterostructures. As expected, all ST composites exhibit higher degradation activity compared to pristine Sn₃O₄ and TiO₂. The optimal ST-0.6 composite (with a TTIP amount of 0.6 g) possesses the highest degradation rate, achieving a 99.6 % removal for Cr(Ⅵ) within 60 min under Xenon light irradiation, with a rate constant (<em>k</em>) of 0.091 min⁻¹. This performance surpasses that of pristine Sn₃O₄ and TiO₂, which have rate constants of 0.0199 min⁻¹ and 0.0186 min⁻¹. Additionally, the ST-0.6 composite effectively removes 72.8 % for isoniazid (ISN) within 80 min. It exhibits the highest photodegradation rate of 0.014 min⁻¹, being 1.3 and 140 times higher than that of TiO₂ (0.0107 min⁻¹) and Sn₃O₄ (0.0001 min⁻¹), respectively. Furthermore, the photocatalytic degradation activities of the recovered samples retain their photocatalytic degradation performance after three consecutive experimental cycles, indicating relatively excellent durability. According to the photocatalytic and characterization results, the significantly enhanced photoactivity of the ST hybrid photocatalyst is attributed to the increased reaction sites, improved light-harvesting properties, and enhanced separation and transfer efficiency of photogenerated electrons and holes within the ST heterostructures.</div></div>","PeriodicalId":18240,"journal":{"name":"Materials Science in Semiconductor Processing","volume":"192 ","pages":"Article 109441"},"PeriodicalIF":4.2,"publicationDate":"2025-03-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143534251","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Deciphering the structural and electrical properties of Ce and Ta ion-doped Bi3Ti1.5W0.5O9 bismuth layered piezoelectric ceramics","authors":"Benjin Xu,&nbsp;Xiangping Jiang,&nbsp;Renfen Zeng,&nbsp;Xin Nie,&nbsp;Chao Chen,&nbsp;Xiaokun Huang,&nbsp;Na Tu,&nbsp;Yunjing Chen,&nbsp;Chong Zhao","doi":"10.1016/j.mssp.2025.109442","DOIUrl":"10.1016/j.mssp.2025.109442","url":null,"abstract":"<div><div>The component-structure-property relationship of Bi_3-<em>x</em>Ce_<em>x</em>Ti_{1.5-<em>x</em>}Ta_<em>x</em>W_0.5O₉(BTW-<em>x</em>CeTa) bismuth layered ceramics prepared by the solid-phase method has been subjected to a comprehensive and systematic investigation. In response to the demand for high-performance bismuth layered piezoelectric ceramics, we doped Ce and Ta ions, resulting in a significant enhancement of both the piezoelectric performance (<em>d</em>₃₃) and the Curie temperature (<em>T</em>_<em>C</em>) in BTW-0.06CeTa ceramics. The results of XRD and its refinement data demonstrate the successful synthesis of BTW phases with a reduced degree of orthorhombic phase. The introduction of Ce and Ta ions disrupts the long-range ordering, leading to the refinement of the original macroscopic domains into highly flexible and responsive microdomains. The favorable resistivity and impedance provide a robust foundation for the complete polarization of the ceramic. The 180° domains facilitate a reduction in interior stress, thereby enhancing the remanent polarization (<em>P</em>_<em>r</em>). This work further reveals the origin of high piezoelectric properties in BTW ceramics. The BTW-0.06CeTa ceramic showed higher performance compared to the BTW ceramic. Specifically, a high <em>d</em>₃₃ value of 20.2 pC/N was obtained, which is an increase of 169 % compared to the undoped sample. A higher <em>T</em>_<em>C</em> value (734 °C) was maintained, dielectric loss (tan<em>δ</em>) at 500 °C was 0.15 (29 % optimized), and resistivity (<em>ρ</em>) was 7.9 × 10⁵ Ω cm. This study demonstrates the potential of BTW piezoelectric ceramics for high-temperature applications.</div></div>","PeriodicalId":18240,"journal":{"name":"Materials Science in Semiconductor Processing","volume":"192 ","pages":"Article 109442"},"PeriodicalIF":4.2,"publicationDate":"2025-03-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143534250","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Redox-active Co3O4/MgV2O5 heterostructure with abundant reaction sites for aqueous asymmetric supercapacitor: Insight into charge storage capacity via Dunn's modeling","authors":"Seemab Hussnain ,&nbsp;Muhammad Ramzan Khawar ,&nbsp;Hafiz Talha Hasnain Rana ,&nbsp;Naveed Akhtar Shad ,&nbsp;Muhammad Khawar Abbas ,&nbsp;Munirah D. Albaqami ,&nbsp;Awais Ahmad ,&nbsp;Sumin Cho ,&nbsp;Yasir Javed ,&nbsp;Dongwhi Choi","doi":"10.1016/j.mssp.2025.109412","DOIUrl":"10.1016/j.mssp.2025.109412","url":null,"abstract":"<div><div>Batteries and supercapacitors are promising energy storage devices to meet the current demand of energy storage demands. Unfortunately, batteries do not retain high cyclic performance as well as power density. On the other hand, supercapacitors retain high cyclic stability but less energy density. Benefiting from the charge storage mechanism of these two devices, the composite material of transition oxide and vanadate is proposed to boost up the specific capacity power density and cyclic stability. Due to the high theoretical capacity of cobalt oxide and high conductivity of magnesium vanadate is selected as the key component materials of composite material. The formation of material composition is confirmed by using the X-ray diffraction technique and tunneling electron microscopy which revealed the successful heterostructure. The morphological assessment revealed that highly dispersed cobalt oxide in magnesium vanadate flakes leads to the increase in overall capacitance (495 C/g) of the composite material in comparison with the Co₃O₄ and MgV₂O₅ which shows 88 C/g and 43 C/g at 1 A/g Current density respectively. Further, the cooperation of cobalt oxide led to improved EDLC behavior thus improving the power density. The highest specific capacity may be due to the shorter diffusion time (0.09 s) of ionic species for intercalation into electrode material. Moreover, highly dispersed cobalt oxide in magnesium vanadate provides more reaction sites due to the presence of multi-redox species with different valence states (Co⁺³, Co⁺⁴, Mg⁺³, Mg⁺⁴) and high surface area which results in high specific capacitance. Moreover, the fabricated prototype device demonstrates an excellent power density of 13200 W/kg at 5 A/g^. Also, the device can successfully deliver 8.9 Wh/kg with 92 % coulombic efficiency and 90 % cyclic retention after 2000 cycles. The fabricated Co₃O₄/MgV₂O₅//AC device operated the commercial calculator, indicating the practical viability of the device.</div></div>","PeriodicalId":18240,"journal":{"name":"Materials Science in Semiconductor Processing","volume":"192 ","pages":"Article 109412"},"PeriodicalIF":4.2,"publicationDate":"2025-03-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143529644","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"The dissolution behavior of oxygen precipitates under high temperature annealing in 300 mm Czochralski silicon","authors":"Hao Wang ,&nbsp;Yun Liu ,&nbsp;Zhongying Xue ,&nbsp;Xing Wei","doi":"10.1016/j.mssp.2025.109436","DOIUrl":"10.1016/j.mssp.2025.109436","url":null,"abstract":"<div><div>In this paper, the factors affecting the dissolution behavior oxygen precipitates in 300 mm Czochralski silicon during high-temperature annealing were quantitatively investigated. By combining gaseous HCl etching with localized light scattering and scanning electron microscopy, we established the relationship between the latex spherical equivalent size of the etch pits and the actual size of the corresponding oxygen precipitates. This method could not only detect nanoscale oxygen precipitates, but also obtain the number and size distribution of oxygen precipitates by a single scan, thus providing a reliable means to compare the changes in the density and size of oxygen precipitates before and after annealing. Furthermore, considering the injection of self-interstitial atoms during the oxidation process and the out-diffusion of oxygen atoms in wafers, we used the classical nucleation model to calculate the critical size of oxygen precipitates along the depth direction, which was proved to be consistent with the experimental results. These findings enhance the understanding of oxygen precipitates dissolution mechanisms and provide valuable guidance for the optimization of annealing conditions and crystal growth conditions.</div></div>","PeriodicalId":18240,"journal":{"name":"Materials Science in Semiconductor Processing","volume":"192 ","pages":"Article 109436"},"PeriodicalIF":4.2,"publicationDate":"2025-03-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143534247","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"The impact of silicon doping on the photocatalytic properties of t-graphene","authors":"K. Ribag ,&nbsp;M. Houmad ,&nbsp;A. Toumlilin ,&nbsp;M. El Moudni ,&nbsp;A. El Kenz ,&nbsp;A. Benyoussef","doi":"10.1016/j.mssp.2025.109434","DOIUrl":"10.1016/j.mssp.2025.109434","url":null,"abstract":"<div><div>The study explores the effects of silicon doping on the optical, electrical, and photocatalytic characteristics of monolayer t-graphene. We used two approximations: the modified Tran-Blaha Becke-Johnson (TB-mBJ) exchange potential and the Tran and Blaha generalized gradient approach (TB-GGA) by the full-potential linearized augmented plane wave method. These approximations are implemented in the Wien2k code. The results demonstrate that silicon doping dramatically modifies and enhances t-graphene's band gap and electrical conductivity. The band gap widens when silicon concentration rises, enhancing silicon's potential application in photocatalytic applications. More precisely, by increasing the band gap, a higher silicon concentration increases the range of applications for silicon in photocatalytic. The conduction band minimum (CBM) of Si-doped t-graphene reduces by 0.29 eV, 0.58 eV, and 1.01 eV at 37.5 %, 25 %, and 12.5 % doping levels, respectively, in comparison to 50 % Si-doped t-graphene. The findings show that silicon doping significantly changes the band gap and increases the electrical conductivity of t-graphene. More specifically, a higher concentration of silicon results in a wider band gap and more uses for photocatalytic applications.</div></div>","PeriodicalId":18240,"journal":{"name":"Materials Science in Semiconductor Processing","volume":"192 ","pages":"Article 109434"},"PeriodicalIF":4.2,"publicationDate":"2025-03-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143529645","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Pumping and shrinking deformation of TSV-Cu under thermal cycling loads: A cross-scale analysis approach","authors":"Zhengwei Fan ,&nbsp;Kaihong Hou ,&nbsp;Yonggui Chen ,&nbsp;Shufeng Zhang ,&nbsp;Yashun Wang ,&nbsp;Xun Chen","doi":"10.1016/j.mssp.2025.109430","DOIUrl":"10.1016/j.mssp.2025.109430","url":null,"abstract":"<div><div>Three-dimensional (3D) integrated packaging represents a novel generation of semiconductor packaging technology, with through-silicon via (TSV) being the most critical structure. However, its failure mechanism and reliability evaluation issues remain inadequately addressed. The thermal mismatch at the TSV microstructure interfaces generates substantial thermal stresses under thermal cycling loads, leading to pump and shrinkage deformation in the filled copper and adversely impacting the structural reliability and performance. This study presents a cross-scale analysis method that integrates the principles of crystal plasticity (CP) with the finite element method (FEM) while taking thermal expansion effects into account. Utilizing this method, the pump and shrinkage phenomena of seven common textures of TSV electroplated copper (TSV-Cu) crystals under thermal cycling load were compared, and the distribution of equivalent stress, elastic strain, and plastic strain were analyzed. Subsequently, the effects of TSV-Cu grain number, topological morphology, random orientation, orientation dispersion, grain size, and orientation mismatch at the top of TSV on deformation were investigated. Furthermore, the residual stress and deformation associated with TSV pumping and shrinking under thermal cycling were analyzed. The conclusions drawn from the cross-scale analysis method proposed in this study are consistent with the experimental observations and analyses reported in the relevant literature, thereby validating the method's accuracy. The research findings indicate that when the copper filler exhibits a Cube texture, the stress, strain, and deformation are relatively minimal. In the absence of a preferred orientation in the copper filler, the dispersion of copper expansion and contraction deformation is dependent on the grain size, and the deformation follows a Weibull competitive distribution. The topological morphology of the grains induces non-uniform deformation in the structure, resulting in localized and annular deformation patterns. The grain size and orientation mismatch at the top of the TSV-Cu significantly influence the pump and shrinkage deformation of copper under thermal cycling conditions. Finally, the study concludes with recommendations for structural process optimization. By linking grain microstructure evolution to macroscopic boundaries and loads through the cross-scale analysis method, this research provides insights into the microscopic-scale pump and shrinkage phenomena of TSV-filled copper under thermal cycling, offering valuable references for TSV structural design, process optimization, failure analysis, and life assessment.</div></div>","PeriodicalId":18240,"journal":{"name":"Materials Science in Semiconductor Processing","volume":"192 ","pages":"Article 109430"},"PeriodicalIF":4.2,"publicationDate":"2025-03-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143534246","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Electrical properties of normally-on hydrogenated Si-terminated diamond field effect transistors","authors":"Yuanchen Ma ,&nbsp;Qi He ,&nbsp;Jinfeng Zhang ,&nbsp;Zihui Zhu ,&nbsp;Zeyang Ren ,&nbsp;Kai Su ,&nbsp;Xinxin Yu ,&nbsp;Qihui Xu ,&nbsp;Jincheng Zhang ,&nbsp;Yue Hao","doi":"10.1016/j.mssp.2025.109426","DOIUrl":"10.1016/j.mssp.2025.109426","url":null,"abstract":"<div><div>Silicon-terminated (C-Si) diamond with high conductivity was prepared by Si sputtering on diamond surface followed by Si etching-away in 1000 °C hydrogen plasma. Then normally-on hydrogenated C-Si diamond metal-oxide-semiconductor field-effect transistor (MOSFET) devices with different gate lengths had been fabricated. The carrier transport characteristics of the device were investigated by the fat gate MOSFET device with a gate length of 50 μm, a constant hole mobility of 49.1 cm²/(Vs) can be maintained over a large carrier concentration range (from 6.7 × 10¹² cm⁻² to 2.2 × 10¹³ cm⁻²) for −8 V ≤ V_GS ≤ −1 V based on the capacitance-voltage (C-V) characteristics and the direct-current (DC) characteristics of the device. A device with a gate length of 3.5-μm shows the threshold voltage (V_TH), maximum drain current (I_Dmax), maximum transconductance (G_m) and on-off ratio of 2.5 V, 140.4 mA/mm, 22.9 mS/mm and 10⁹, respectively. When the temperature increased from room temperature to 150 °C, the device exhibited a reduction in I_Dmax, which may be due to the enhanced carrier scattering and reduced mobility. Normally-on C-Si diamond FET devices provided new possibilities for the fabrication of high-performance diamond microwave power devices.</div></div>","PeriodicalId":18240,"journal":{"name":"Materials Science in Semiconductor Processing","volume":"192 ","pages":"Article 109426"},"PeriodicalIF":4.2,"publicationDate":"2025-03-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143529660","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"White light emission from a ternary dysprosium complex: Energy transfer and ligand-driven modulation","authors":"Vandana Aggarwal ,&nbsp;Devender Singh ,&nbsp;Kapeesha Nehra ,&nbsp;Swati Dalal ,&nbsp;Sonia Redhu ,&nbsp;Parvin Kumar ,&nbsp;Sumit Kumar ,&nbsp;Rajender Singh Malik","doi":"10.1016/j.mssp.2025.109427","DOIUrl":"10.1016/j.mssp.2025.109427","url":null,"abstract":"<div><div>This study explores the preparation and spectral properties of four luminescent dysprosium (III) complexes: [Dy (TTBD)₃L], where L represents different auxiliary ligands, including Phen (D1), Neo (D2), BP (D3) and BC (D4). The successful synthesis of these complexes was confirmed through a combination of CHN analysis, IR spectroscopy and Proton NMR spectroscopy. Optical properties were systematically assessed by UV–visible absorption spectroscopy, photoluminescence (PL) spectroscopy and radiative decay lifetime measurements. CIE coordinates, plotted in the 1931 color space, were used to identify the emissive color of the complexes. Complex D2 emitted white light, D3 showed bluish-white emission, while D1 and D4 exhibited blue luminescence due to a broad, ligand-based emission band. In addition, the thermal stability and electrochemical behavior of the complexes were assessed. This thorough analysis seeks to elucidate the structure-optical properties relationship, focusing on emission modulation for potential applications in white OLEDs and other optoelectronic devices. The study emphasizes the importance of controlling energy transfer interactions between donor and acceptor moieties to tune the emission spectra. We demonstrate that by carefully selecting different sensitizers for the Dy(III) ion, a range of color outputs, including pure white light from a single-phase material, can be achieved, offering promising pathway for advanced display and lighting technologies.</div></div>","PeriodicalId":18240,"journal":{"name":"Materials Science in Semiconductor Processing","volume":"192 ","pages":"Article 109427"},"PeriodicalIF":4.2,"publicationDate":"2025-03-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143520199","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Eu2O3/carbon-nanospheres for enhanced photocatalytic degradation of rhodamine B dye","authors":"Jialong Ma ,&nbsp;Yishuai Jing ,&nbsp;Yuting Li ,&nbsp;Shanbo Cui ,&nbsp;Xin Zhao ,&nbsp;Jiaming Song","doi":"10.1016/j.mssp.2025.109422","DOIUrl":"10.1016/j.mssp.2025.109422","url":null,"abstract":"<div><div>The demand for water pollution control accelerated the development of environment-friendly technologies, e.g., photocatalysis, for resolving the pollution issue efficiently. Wide bandgap rare earth oxide semiconductors are potential photocatalysts with low toxicity for the environment, but the luminescence of rare earth ions and narrow light absorption band restrict their photocatalytic degradation efficiency. In this study, we synthesized a composite structure consisting of Eu₂O₃ nanoparticles (NPs) and carbon-nanospheres (CNSs) by annealing both monomers in argon atmosphere together. The photocatalytic degradation performance of the composites with different mass ratios were investigated by utilizing rhodamine B (RhB) dye as the target organic pollutant. The results show that the combination with CNSs significantly improved the photocatalytic performance of Eu₂O₃, and the composite's highest removal efficiency reached up to 55 % within 60 min, which is competitive to those for other rare earth oxides. The improved photocatalytic degradation capacity for the composite structure was attributed to the luminescence suppression of Eu³⁺ and the increased visible-light absorption by CNSs. Our research sheds light on the possible routes for enhancing the photocatalytic degradation capability of rare earth oxides in the environment pollution abatement.</div></div>","PeriodicalId":18240,"journal":{"name":"Materials Science in Semiconductor Processing","volume":"192 ","pages":"Article 109422"},"PeriodicalIF":4.2,"publicationDate":"2025-03-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143520200","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}