Umbreena Yaqoob , Atia Atiq , Qura Tul Ain , Ambreen Kalsoom , Muhammad Nasir Rasul
{"title":"A comprehensive Ab-Initio study of ternary XCo2S4 (X = Mg, Zn) chalcogenides","authors":"Umbreena Yaqoob , Atia Atiq , Qura Tul Ain , Ambreen Kalsoom , Muhammad Nasir Rasul","doi":"10.1016/j.mssp.2024.109261","DOIUrl":"10.1016/j.mssp.2024.109261","url":null,"abstract":"<div><div>The properties of XCo<sub>2</sub>S<sub>4</sub> (X = Mg, Zn) compounds were investigated using ab-initio density functional theory-based computation, including structural, electronic, -COHP, phonon band, charge transfer, and optical properties. The three different approximation schemes i.e., local density approximation, generalized gradient approximation, and modified Becke-Johnson functionals have been incorporated for exchange-correlation treatment. Both compounds exhibited chemical and lattice dynamical stabilities. The electronic attributes revealed that the compounds under investigation are semiconductors with indirect band gaps spanning from 0.2 eV to 1.4 eV when employing different exchange-correlation functionals. The partial density of states (PDOS) analysis is being conducted based on electronic properties highlighting the significant contribution of cobalt atoms in both compounds. The evaluation of -COHP plots revealed the most robust bonding interactions of (S1-Co2) pair promoting the stabilization of the crystal lattice in the ZnCo<sub>2</sub>S<sub>4</sub> compound, whereas Co2-Mg pair exhibited the strongest bonding interaction in the MgCo<sub>2</sub>S<sub>4</sub> compound. The occupied molecular orbitals exhibited a charge density that was localized around the Co-atom, while the distribution of unoccupied molecular orbitals was detected at both Co- and S-atoms in the studied compounds. Investigation of the optical characteristics of the substances entailed scrutinizing dielectric function, refractive index, extinction coefficient, absorption coefficient, optical conductivity, reflectivity, and energy loss factor. These findings are anticipated to offer a novel pathway for experimentalists to explore the potential applications of XCo<sub>2</sub>S<sub>4</sub> (X = Mg, Zn) compounds in solar cell, as shielding material against UV radiations, photovoltaic and optoelectronic devices.</div></div>","PeriodicalId":18240,"journal":{"name":"Materials Science in Semiconductor Processing","volume":"189 ","pages":"Article 109261"},"PeriodicalIF":4.2,"publicationDate":"2025-01-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143131601","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Namitha B. Bejoy , Piotr A. Piatkowski , Wegood M. Awad , Panče Naumov , Ali S. Alnaser
{"title":"Effects of surface morphology and composition on saturable absorption and charge carrier dynamics in oxidized Si nanocrystal thin films","authors":"Namitha B. Bejoy , Piotr A. Piatkowski , Wegood M. Awad , Panče Naumov , Ali S. Alnaser","doi":"10.1016/j.mssp.2025.109285","DOIUrl":"10.1016/j.mssp.2025.109285","url":null,"abstract":"<div><div>Thin films of silicon semiconductor nanocrystals (Si NCs) have a wide range of applications, from serving as saturable absorbers in mode-locked fiber lasers to being used in photovoltaic materials. This study investigates the relationship between the size, structure, morphology, and composition of Si NCs synthesized by femtosecond laser ablation and the optical properties of their thin films deposited on glass substrates. Femtosecond transient absorption spectroscopy of two sets of Si NCs synthesized by laser pulses layered on glass showed that photoinduced excitons efficiently transfer from the crystalline core to trap states-rich shell within a few picoseconds. The ultrafast trapping is followed by excitons redistribution among localized states on a time scale of over tens of picoseconds. Further depopulation of the trap states into the valence band (VB) occurs on a nanosecond timescale, confirming the existence of long-lived trap states. Z-scan measurements revealed that an increase in the laser pulse intensity utilized for Si NCs synthesis reduces the saturation intensities of saturable absorption in thin films from 32.8 MW/cm<sup>2</sup> to 1.58 MW/cm<sup>2</sup>. These findings underscore the significance of surface properties in optimizing Si NC-based optoelectronic devices and their potential impact on the future design of Si nanocrystal-based optical materials.</div></div>","PeriodicalId":18240,"journal":{"name":"Materials Science in Semiconductor Processing","volume":"189 ","pages":"Article 109285"},"PeriodicalIF":4.2,"publicationDate":"2025-01-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143131599","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Soon Wan Chi, Azam Taufik Mohd Din, Ahmad Zuhairi Abdullah
{"title":"Critical review on magnetic separable molecularly imprinted photocatalyst: Synthesis, reaction mechanism and outlook for practical applications","authors":"Soon Wan Chi, Azam Taufik Mohd Din, Ahmad Zuhairi Abdullah","doi":"10.1016/j.mssp.2025.109292","DOIUrl":"10.1016/j.mssp.2025.109292","url":null,"abstract":"<div><div>Conventional photocatalysts have been engineered over the years to achieve high photocatalytic activity with minimum input of photon energy, by narrowing their bandgap energy, improving their adsorption capacity, and enhancing the separation of photogenerated electron-hole pairs. However, conventional photocatalysts' selectivity has always been a gap, where undesired degradation of other molecules co-existing in the solution occurs, deteriorating degradation efficiency over the targeted molecules. Also, the challenge of separating these nanosized photocatalysts from the water environment decreases the process's sustainability. In response to the issues identified above, combining magnetic properties and molecular imprinting in photocatalysis technology has emerged as a promising solution. The basic idea of molecular imprinting is to prepare tailor-made materials with predefined recognition of certain molecules, where specific cavities are created on the material surface by using template molecules. The selective binding of the target pollutants to the recognition sites of molecularly imprinted photocatalysts (MIPs) allows more efficient utilization of photogenerated reactive species for degradation, providing faster degradation rates and lowering the overall energy consumption. Coupling the MIPs with magnetic properties, efficient and effective harvesting and regenerating can be achieved, providing a more sustainable option compared to conventional photocatalysts. To date, magnetic molecularly imprinted photocatalysts (MMIPs) with recognition and reusability properties have been employed in wastewater treatment, environmental remediation as well as sensor development. In this review paper, we explore the potential of MMIPs which their photodegradation mechanism, synthesis method and challenges, design criteria, applications, and future prospects are critically discussed.</div></div>","PeriodicalId":18240,"journal":{"name":"Materials Science in Semiconductor Processing","volume":"189 ","pages":"Article 109292"},"PeriodicalIF":4.2,"publicationDate":"2025-01-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143130870","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Jia Guo , Yujie Yuan , Jian Ni , Jinlian Bi , Yuhan Deng , Rufeng Wang , Shuai Zhang , Hongkun Cai , Jianjun Zhang
{"title":"High-yield CsPbBr3 quantum dots via microfluidic technology for photodetectors","authors":"Jia Guo , Yujie Yuan , Jian Ni , Jinlian Bi , Yuhan Deng , Rufeng Wang , Shuai Zhang , Hongkun Cai , Jianjun Zhang","doi":"10.1016/j.mssp.2025.109290","DOIUrl":"10.1016/j.mssp.2025.109290","url":null,"abstract":"<div><div>Cesium lead halide perovskite quantum dots (CLHP QDs) are well-known for their high stability and excellent charge-carrier mobility. However, the commercialization of perovskite quantum dots (QDs) is limited by the challenges associated with scaling up production using many synthesis methods. In this work, microfluidic technology was utilized to synthesize CsPbBr<sub>3</sub> QDs in air, achieving a yield greater than 45 %. Additionally, the synthesized CsPbBr<sub>3</sub> QDs were applied to photodetectors (PDs). The results indicate that increased QD size reduces carrier recombination and enhances electronic coupling between the inter-nanocrystals (NCs), increasing carrier transport capacity and diffusion efficiency. The specific detectivity (<span><math><mrow><msup><mi>D</mi><mo>∗</mo></msup></mrow></math></span>) of the PDs can reach 10<sup>12</sup>, demonstrating excellent weak-light detection ability.</div></div>","PeriodicalId":18240,"journal":{"name":"Materials Science in Semiconductor Processing","volume":"189 ","pages":"Article 109290"},"PeriodicalIF":4.2,"publicationDate":"2025-01-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143131593","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Purusottam Reddy B , Aboud A.A. Bahajjaj , Jayanth Babu Karnam , Chandra Sekhar M , Youngsuk Suh , Si-Hyun Park
{"title":"Prussian blue analog derived carbon-rich FeS2@CoS2 nano composites as bifunctional electrocatalyst for water splitting","authors":"Purusottam Reddy B , Aboud A.A. Bahajjaj , Jayanth Babu Karnam , Chandra Sekhar M , Youngsuk Suh , Si-Hyun Park","doi":"10.1016/j.mssp.2025.109287","DOIUrl":"10.1016/j.mssp.2025.109287","url":null,"abstract":"<div><div>Developing highly efficient and durable bifunctional electrocatalysts for water splitting largely depends on creating multicomponent coupled interfaces. Transition metal sulfides are commonly used as efficient catalysts; however, creating strong coupling interfaces to improve their electrocatalytic performance presents a considerable challenge. Herein, we present prussian blue analogue derived carbon-rich cobalt-iron disulfide (C@CoS₂@FeS₂) nanocomposites employing different post-sulfurization temperatures as bifunctional catalysts for water splitting. Experimental results demonstrated that the synergistic interaction between C and CoS₂@FeS₂, high degree of defects and optimized electronic structure of heterogeneous interfaces, enhances conductivity, catalytic activity and ensures long-term durability. Consequently, the C@CoS₂@FeS₂ nanocomposites sulfurized at 500 °C exhibited outstanding catalytic properties with overpotentials of 303 mV at 50 mA cm<sup>−2</sup> for oxygen evolution reaction (OER) and 138 mV at 20 mA cm<sup>−2</sup> for hydrogen evolution reaction (HER). Notably, the assembled C@CoS₂@FeS₂ ||C@CoS₂@FeS₂ electrolyzer system only requires 1.829 V at 50 mA cm<sup>−2</sup> in 1 M KOH and maintaining stability for 10 h. These findings indicate that the C@CoS₂@FeS₂-500 catalyst could be an efficient and cost-effective option for water-splitting technologies.</div></div>","PeriodicalId":18240,"journal":{"name":"Materials Science in Semiconductor Processing","volume":"189 ","pages":"Article 109287"},"PeriodicalIF":4.2,"publicationDate":"2025-01-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143131603","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Micro-nano scaled copper nanowire: Deposited with meniscus-confined electrodeposition","authors":"Gangchang Hu, Jinlian Bi, Wei Li, Yujie Yuan, Yupeng Xing","doi":"10.1016/j.mssp.2025.109272","DOIUrl":"10.1016/j.mssp.2025.109272","url":null,"abstract":"<div><div>Traditional high-temperature soldering, applied to interconnections of solar cells, usually induces thermo-mechanical stress. Metal interconnection via meniscus-confined electrodeposition (MCED) was performed at room temperature. However, it is limited by slow electrodeposition (printing) rate. In this work, the metal printing rate was enhanced by a new MCED system. The printing rate was increased from 507.6 μm<sup>3</sup>/s to 624.0 μm<sup>3</sup>/s by adjusting the initial meniscus height (IMH). Besides, porous materials were applied to stabilize the meniscus, helping improve the morphology of the printed Cu pillars. Cu pillars with different tilt angles and sizes were prepared with a high printing rate. Finally, a Cu bridge was successfully printed with the new MCED system, which would be applied to solar cells and module interconnections.</div></div>","PeriodicalId":18240,"journal":{"name":"Materials Science in Semiconductor Processing","volume":"189 ","pages":"Article 109272"},"PeriodicalIF":4.2,"publicationDate":"2025-01-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143130431","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Structural, morphological, optical, and electrochemical properties of Zn-doped CeO2/rGO nanocomposites","authors":"Songkot Utara , Nuchjaree Salidkul , Attaphol Karaphun , Somchai Sonsupap , Narong Chanlek , Sitchai Hunpratub , Sumalin Phokha","doi":"10.1016/j.mssp.2025.109288","DOIUrl":"10.1016/j.mssp.2025.109288","url":null,"abstract":"<div><div>Metal-doped cerium oxide has recently attracted the interest of researchers worldwide because of its various applications in different fields such as supercapacitors, high-sensitivity electrodes or photocatalytic. Metal-doped cerium oxide can be improved utilizing a variety of metals and composites with enhanced conductivity, which advances materials science in semiconductor processing. In this study, undoped and Zn-doped CeO<sub>2</sub> nanoparticles at 5, 10, 15, and 20 at.% were reacted with reduced graphene oxide (rGO) using a hydrothermal method. They were heated at 150 °C for 12 h and then processed in an ultrasonic reactor (20 kHz) at 25 ± 1 °C. Their structural, morphological, elemental, optical, and electrochemical properties were systematically characterized. The calculated average crystallite sizes of CeO<sub>2</sub> peaks ranged from 4.60 ± 0.2 to 12.0 ± 0.4 nm. These samples exhibited a single CeO<sub>2</sub> phase corresponding to a face-centered cubic structure, except for 20 at.% Zn-doped CeO<sub>2</sub>/rGO, which presented a ZnO phase. The samples had lower band gap values than expected for undoped CeO<sub>2</sub> nanoparticles, higher valence states due to their Ce<sup>3+</sup>/Ce<sup>4+</sup> ratios, and a large surface area, 242 m<sup>2</sup>/g, due to Zn-doping in CeO<sub>2</sub> samples. The highest specific capacitance values achieved were 88.49 F/g at 5 mV/s and 134.01 F/g at 0.5 A/g for undoped CeO<sub>2</sub>/rGO. Zn-doping resulted in decreased capacitive behavior with specific capacitance values in the range of 70.78–81.00 F/g at 5 mV/s and 79.24–101.43 F/g at 0.5 A/g. This study for synthesizing Zn/CeO<sub>2</sub>/rGO ternary nanocomposites produced materials with improved band gaps, valence states of Ce<sup>3+</sup>/Ce<sup>4+</sup> ratios, and greater surface area for improved electrocatalytic performance.</div></div>","PeriodicalId":18240,"journal":{"name":"Materials Science in Semiconductor Processing","volume":"189 ","pages":"Article 109288"},"PeriodicalIF":4.2,"publicationDate":"2025-01-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143131594","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Guo He , Dezhi Yang , Jiangshan Chen , Xianfeng Qiao , Dongge Ma
{"title":"Crystallization regulation strategy by using 4,4'-cyclohexylidenebis(N, N-bis(p-tolyl)aniline) for high-performance air-processed perovskite photodetectors and solar cells","authors":"Guo He , Dezhi Yang , Jiangshan Chen , Xianfeng Qiao , Dongge Ma","doi":"10.1016/j.mssp.2025.109289","DOIUrl":"10.1016/j.mssp.2025.109289","url":null,"abstract":"<div><div>Perovskites offer notable advantages, including simplified processing, reduced production costs, and scalability for large-area preparation. However, the crystallization process is very sensitive to humidity. Although some progress has been made in air-processed perovskite solar cells (PSCs), there remains a relative scarcity of research on air-processed perovskite photodetectors (PPDs). In this work, we propose a strategy employing electron-donating molecules to enhance the performance of both air-processed PPDs and PSCs. To promote the crystallization of perovskites in air and mitigate the trap states, 4,4'-cyclohexylidenebis(N, N-bis(p-tolyl)aniline) (TAPC), an electron-donating organic small molecule is added into the perovskite precursor to interact with Pb ions. The addition of TAPC not only reduces non-radiative recombination within the perovskite but also optimizes energy level alignment at the perovskite/C<sub>60</sub> interface. As a result, the TAPC-doped PSCs achieve a power conversion efficiency of 21.20 %. More importantly, for the PPDs, the doping of TAPC elevates the maximum external quantum efficiency to 95 %, while concurrently reducing the dark current density to 4.6 × 10<sup>−10</sup> A cm<sup>−2</sup>. With the suppressed dark current, the linear dynamic range of the PPD spans over 9 orders of magnitudes. Moreover, the response time and the operation stability are also significantly improved. Our crystallization regulation strategy using electron-donating molecules demonstrates its efficacy in enhancing the performance of both air-processed PPDs and PSCs, offering valuable insights for further advancements of perovskite devices fabricated in ambient conditions.</div></div>","PeriodicalId":18240,"journal":{"name":"Materials Science in Semiconductor Processing","volume":"189 ","pages":"Article 109289"},"PeriodicalIF":4.2,"publicationDate":"2025-01-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143130430","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"A review of state of the art fabrication approaches for efficiency improvement in ultra-violet region light emitting diodes","authors":"Indrani Mazumder , Kashish Sapra , Ashok Chauhan , Manish Mathew , Kuldip Singh","doi":"10.1016/j.mssp.2025.109270","DOIUrl":"10.1016/j.mssp.2025.109270","url":null,"abstract":"<div><div>This article addresses the significant methodology adopted for fabrication of Ultra Violet light emitting Diodes (UV LED) in two different configurations termed as top-emitting and bottom-emitting along-with the constraints identified in reaching higher extraction efficiency in UV LEDs. Light emitters in the 200 nm to 400 nm wavelength range are considered to be optimally developed using the Al<sub>x</sub>In<sub>y</sub>Ga<sub>(1-x-y)</sub>N alloy because of its wide band gap, suitable doping possibilities, and compatibility with existing visible light emitting technologies. Al<sub>x</sub>In<sub>y</sub>Ga<sub>(1-x-y)</sub>N-based UV LEDs are becoming a popular alternative to traditional mercury-based light emitters due to their compactness and severely less ecological contamination. UV LEDs suffer from inadequate external quantum efficiency due to insufficient internal quantum efficiency and unsatisfactory light extraction efficiency. Lower efficiency is a result of a combination of factors such as metal-semiconductor junction, carrier transport, light absorption, flip-chip technology and substrate thermal conductivity. The research explains the causes of lower efficiency and accumulates existing technologies adopted for efficiency improvement. To obtain high efficiency UV light emitters including micro-LED, it is important to address potential issues and possible solutions. This pathfinder survey outlines the current state of emitters with their market stake, signifying major bottlenecks and introducing platform for future endeavours.</div></div>","PeriodicalId":18240,"journal":{"name":"Materials Science in Semiconductor Processing","volume":"189 ","pages":"Article 109270"},"PeriodicalIF":4.2,"publicationDate":"2025-01-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143130869","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Shiyu Cao , Chenyu Shi , Fanlin Kong , Yi Liu , Yanwei Fan , Yuling Tuo , Junhua Wang , Jincheng Yao , Aimin Chang
{"title":"Fabrication and properties of fast response NTC chip thermistors: Based on Mn-Co-Fe-Mg-M-O (M=Zn, Cr) high entropy ceramics","authors":"Shiyu Cao , Chenyu Shi , Fanlin Kong , Yi Liu , Yanwei Fan , Yuling Tuo , Junhua Wang , Jincheng Yao , Aimin Chang","doi":"10.1016/j.mssp.2025.109278","DOIUrl":"10.1016/j.mssp.2025.109278","url":null,"abstract":"<div><div>In this study, fast-response Negative Temperature Coefficient (NTC) chip thermistors are fabricated using Mn-Co-Fe-Mg-Zn-O and Mn-Co-Fe-Mg-Cr-O high-entropy ceramics (HECs). These two HECs are synthesized using a solid-state reaction method. Both HECs are composed of rock-salt and spinel phases. The HECs feature a dense microstructure and the major elements are found to conform to the equimolar ratio. Because of the presence of Zn<sup>2</sup>⁺ and Cr³⁺ ions, the electrical properties and lattice structures of the two HECs are distinct. In the Zn-containing HEC, the concentration of ion pairs participating in the conductivity is higher and the grain and grain boundary resistances are almost equal. In contrast, the concentration of ion pairs in the Cr-containing HEC is lower, with grain boundary resistance dominating. The room temperature resistivities of the two HECs are 167,163 <span><math><mrow><mi>Ω</mi><mo>·</mo><mi>c</mi><mi>m</mi></mrow></math></span> and 264,471 <span><math><mrow><mi>Ω</mi><mo>·</mo><mi>c</mi><mi>m</mi></mrow></math></span>, with material constants (<span><math><mrow><msub><mi>B</mi><mrow><mn>25</mn><mo>/</mo><mn>50</mn></mrow></msub></mrow></math></span>) of 4357 <span><math><mrow><mi>K</mi></mrow></math></span> and 4286 <span><math><mrow><mi>K</mi></mrow></math></span>, respectively. After aging at 125 °C for 1000 h, the resistance drift rates of the two HECs are 0.49 % (Mn-Co-Fe-Mg-Zn-O) and 0.59 % (Mn-Co-Fe-Mg-Cr-O). A mathematical model has been developed to describe the dynamic process of the NTC thermistor. The model shows that an increase in the material constant <span><math><mrow><mi>B</mi></mrow></math></span> value of the NTC material results in a reduction in the thermal time constant of the fabricated NTC thermistor. The high <span><math><mrow><mi>B</mi></mrow></math></span> values of HECs suggest that NTC thermistors made from these materials are suitable for fast-response applications. The thermal time constants of two NTC chip thermistors in air are 1.891 s and 2.707 s, respectively. It is anticipated that the HEC materials can be employed in the fabrication of fast-response NTC thermistors.</div></div>","PeriodicalId":18240,"journal":{"name":"Materials Science in Semiconductor Processing","volume":"189 ","pages":"Article 109278"},"PeriodicalIF":4.2,"publicationDate":"2025-01-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143130432","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}