Materials Science in Semiconductor Processing最新文献_第10页

Enhanced photoactivity of Sn-doped BiOI microspheres for antibiotic degradation 掺锡biio微球增强抗生素降解的光活性

IF 4.6 3区工程技术

Materials Science in Semiconductor Processing Pub Date : 2025-08-21 DOI: 10.1016/j.mssp.2025.109988

Huiyong Yu , Mengyuan Gao , Gongke Wang , Yumin Liu

{"title":"Enhanced photoactivity of Sn-doped BiOI microspheres for antibiotic degradation","authors":"Huiyong Yu , Mengyuan Gao , Gongke Wang , Yumin Liu","doi":"10.1016/j.mssp.2025.109988","DOIUrl":"10.1016/j.mssp.2025.109988","url":null,"abstract":"<div><div>The widespread use of antibiotics such as tetracycline has led to significant risks to both environmental sustainability and public health due to their persistence in natural water systems. In this study, Sn-doped BiOI microspheres were successfully synthesized through a simple one-step hydrothermal method to achieve enhanced photodegradation of tetracycline in aqueous solution. After 40 min of visible light irradiation, the optimal Sn-doped BiOI photocatalyst exhibited an exceptional tetracycline degradation efficiency of 82.8 %, significantly surpassing the 56.0 % efficiency of pure BiOI. To understand the origins of the enhanced catalytic behavior, a series of characterization techniques, including XRD, SEM, XPS, UV–Vis DRS, PL, and electrochemical measurements, were performed to investigate the crystal structure, morphology, surface states, light absorption properties, and charge carrier recombination and separation dynamics of the catalysts. These analyses demonstrated that Sn doping substantially modified the microscopic structure, morphology, and optical properties of BiOI, thereby greatly improving its photocatalytic efficiency. Further analysis of Sn doping effects demonstrated significant enhancement in transport and separation of photocarriers within BiOI microspheres, thereby leading to substantially improved photocatalytic performance under visible light.</div></div>","PeriodicalId":18240,"journal":{"name":"Materials Science in Semiconductor Processing","volume":"200 ","pages":"Article 109988"},"PeriodicalIF":4.6,"publicationDate":"2025-08-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144885893","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Effect of native oxidation and hydroxidation on earth-abundant ZnSnN2 grown by reactive RF magnetron sputtering 天然氧化和氢化作用对反应性射频磁控溅射制备地球富集ZnSnN2的影响

IF 4.6 3区工程技术

Materials Science in Semiconductor Processing Pub Date : 2025-08-20 DOI: 10.1016/j.mssp.2025.109980

Dohyun Kim , Juchan Hwang , Jongmin Kim , Jungwook Min , Gyeong Cheol Park , Kwangwook Park

{"title":"Effect of native oxidation and hydroxidation on earth-abundant ZnSnN2 grown by reactive RF magnetron sputtering","authors":"Dohyun Kim , Juchan Hwang , Jongmin Kim , Jungwook Min , Gyeong Cheol Park , Kwangwook Park","doi":"10.1016/j.mssp.2025.109980","DOIUrl":"10.1016/j.mssp.2025.109980","url":null,"abstract":"<div><div>II-IV-N<sub>2</sub> semiconductors such as ZnSnN<sub>2</sub> have emerged as promising earth-abundant materials, but their heterovalent bonding structure is more susceptible to oxidation and hydroxidation than conventional III-nitrides. In this study, we focus on native oxidation and hydroxidation of ZnSnN<sub>2</sub> thin films grown by RF magnetron sputtering and investigate the roles of atmospheric moisture and oxygen in material degradation. By exposing ZnSnN<sub>2</sub> to controlled environments with varying humidity, we observed significant oxidation and hydroxidation under humid conditions, as confirmed by energy-dispersive X-ray spectroscopy (EDS), X-ray diffraction (XRD), and X-ray photoelectron spectroscopy (XPS) analysis. In particular, the formation of the oxides (SnO<sub>2</sub>) and hydroxides (Zn(OH)<sub>2</sub> and ZnSn(OH)<sub>6</sub>) on the surface remained unaffected, indicating surface-limited oxidation. Angle-resolved XPS revealed a self-passivating oxide and hydroxide layer that prevents deep oxidation and hydroxidation. These findings demonstrate a self-limiting property of an oxide and hydroxide layer formed under humid conditions, providing valuable insight into the environmental stability of ZnSnN<sub>2</sub>.</div></div>","PeriodicalId":18240,"journal":{"name":"Materials Science in Semiconductor Processing","volume":"200 ","pages":"Article 109980"},"PeriodicalIF":4.6,"publicationDate":"2025-08-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144864303","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

The visual light transparency and bipolar conducting for Al1-xGaxCuS2 alloys Al1-xGaxCuS2合金的可见光透明度和双极导电性

IF 4.6 3区工程技术

Materials Science in Semiconductor Processing Pub Date : 2025-08-20 DOI: 10.1016/j.mssp.2025.109983

Yuhang Deng , Jiayuan Wang , Liu Yang , Shuaiwei Fan

{"title":"The visual light transparency and bipolar conducting for Al1-xGaxCuS2 alloys","authors":"Yuhang Deng , Jiayuan Wang , Liu Yang , Shuaiwei Fan","doi":"10.1016/j.mssp.2025.109983","DOIUrl":"10.1016/j.mssp.2025.109983","url":null,"abstract":"<div><div>Utilizing the special quasi-random structure (SQS) approach combining with the Heyd-Scuseria-Ernzerhof hybrid functional calculations, we systematically study the electronic and optical properties of AlCuS<sub>2</sub>, GaCuS<sub>2</sub>, and Al<sub>1-x</sub>Ga<sub>x</sub>CuS<sub>2</sub> alloys. Our calculations reveal both AlCuS<sub>2</sub> and GaCuS<sub>2</sub> are direct wide gap semiconductors, and AlCuS<sub>2</sub> possesses superior visible light transparency. The volume for Al<sub>1-x</sub>Cu<sub>x</sub>GaS<sub>2</sub> alloys follows Vegard's law. The Ga doping can significantly tune the electronic and optical properties. When the Ga composition reaches 25.0 %, Al<sub>1-x</sub>Cu<sub>x</sub>GaS<sub>2</sub> alloys achieves the optimized electronic characteristics. For Al<sub>0.75</sub>Ga<sub>0.25</sub>CuS<sub>2</sub>, the bandgap is 3.04 eV, the visible light transparency is higher than 80.0 %, and the average effective mass of electron (hole) is 0.21 (0.79) <em>m</em><sub><em>0</em></sub>. When carrier density reaches 10<sup>19</sup> cm<sup>−3</sup>, the n (p)-type electrical conductivity for Al<sub>0.75</sub>Ga<sub>0.25</sub>CuS<sub>2</sub> can reach 2.5 × 10<sup>4</sup> (2.9 × 10<sup>3</sup>) S/m, respectively. Such synergistic combination of high visible light transparency and excellent bipolar electrical conductivity make Al<sub>1-x</sub>Ga<sub>x</sub>CuS<sub>2</sub> alloys be groundbreaking candidates in next-generation transparent electronics and optoelectronic devices.</div></div>","PeriodicalId":18240,"journal":{"name":"Materials Science in Semiconductor Processing","volume":"200 ","pages":"Article 109983"},"PeriodicalIF":4.6,"publicationDate":"2025-08-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144864372","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Enhanced oxygen sensing using the Pb-doped SnS nanostructures: Overcoming the humidity challenges 利用掺杂铅的SnS纳米结构增强氧传感：克服湿度挑战

IF 4.6 3区工程技术

Materials Science in Semiconductor Processing Pub Date : 2025-08-20 DOI: 10.1016/j.mssp.2025.109959

Rouhollah Namazi-Rizi , Farid Jamali-Sheini , Mohsen Cheraghizade

{"title":"Enhanced oxygen sensing using the Pb-doped SnS nanostructures: Overcoming the humidity challenges","authors":"Rouhollah Namazi-Rizi , Farid Jamali-Sheini , Mohsen Cheraghizade","doi":"10.1016/j.mssp.2025.109959","DOIUrl":"10.1016/j.mssp.2025.109959","url":null,"abstract":"<div><div>In this research, the gas and humidity sensing properties of Pb-doped SnS nanostructures synthesized via a sonochemical method were investigated. The study aims to enhance oxygen sensing performance and overcome challenges posed by humidity interference. Various concentrations of Pb were incorporated into the SnS nanostructures, and their structural, morphological, and optical properties were thoroughly analyzed. Our results indicate that Pb doping influences the crystallite size and strain, enhancing gas adsorption properties and improving sensor response. The Pb-doped sensors demonstrated better oxygen sensing performance, with the Pb3 sample showing the highest response at 170 °C. The Pb-doped sensors exhibited a lower humidity response compared to the undoped sensor. For example, the Pb3 sample exhibited responses of 32 % and 9.5 % to oxygen and humidity, respectively, while the Pb0 sample showed responses of 11 % and 190 % to oxygen and humidity, respectively. The sensors show good stability and reproducibility, making them suitable for real-world applications where both gas and humidity must be detected simultaneously. These findings open new avenues for developing efficient, low-cost sensors for environmental monitoring and industrial use.</div></div>","PeriodicalId":18240,"journal":{"name":"Materials Science in Semiconductor Processing","volume":"200 ","pages":"Article 109959"},"PeriodicalIF":4.6,"publicationDate":"2025-08-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144864302","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Pentacene-based near-infrared organic phototransistor with enhanced responsivity by using ClAlPc/C70 light-absorbing-layer 利用ClAlPc/C70吸光层增强响应性的五苯基近红外有机光电晶体管

IF 4.6 3区工程技术

Materials Science in Semiconductor Processing Pub Date : 2025-08-20 DOI: 10.1016/j.mssp.2025.109971

Ching-Lin Fan , Hou-Yen Tsao , Bo-Ren Lin

{"title":"Pentacene-based near-infrared organic phototransistor with enhanced responsivity by using ClAlPc/C70 light-absorbing-layer","authors":"Ching-Lin Fan , Hou-Yen Tsao , Bo-Ren Lin","doi":"10.1016/j.mssp.2025.109971","DOIUrl":"10.1016/j.mssp.2025.109971","url":null,"abstract":"<div><div>In this paper, we proposed a high responsive organic pentacene-based phototransistor (OPT) with ClAlPc/C<sub>70</sub> heterojunction absorbing-layer designed for near-infrared (NIR) light sensing at the wavelength of 780 nm. ClAlPc exhibits strong optical absorption in the near-infrared region. Fullerene (C<sub>70</sub>) is commonly used as acceptor materials combinate with the ClAlPc as donor materials to form heterojunction structure to enhance the exciton dissociation and achieve high performance OPTs. The energy level alignment between pentacene/ClAlPc/C<sub>70</sub> generates an internal electric field to cause the increased efficiency of the exciton dissociation and the efficient charge transport to the active layer, leading to high photocurrent. The proposed device has high responsivity of 3.36 AW<sup>-1</sup> and achieves a high EQE of 534 % at the wavelength of 780 nm. This work proposes a high-performance OPT with excellent near-infrared light responsivity and exciton dissociation as a result of the designed ClAlPc/C<sub>70</sub> absorbing layer with the optimal thickness. It believes that the pentacene-based OPT with the ClAlPc/C<sub>70</sub> heterojunction light-absorbing layer will be a good candidate for the development of high-performance NIR-optoelectronic devices.</div></div>","PeriodicalId":18240,"journal":{"name":"Materials Science in Semiconductor Processing","volume":"200 ","pages":"Article 109971"},"PeriodicalIF":4.6,"publicationDate":"2025-08-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144864301","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Construction of a novel ZnWO4/MIL-53(Fe) heterojunction photocatalyst for the boosted tetracycline degradation under visible-light irradiation 新型ZnWO4/MIL-53（Fe）异质结光催化剂的构建促进四环素在可见光下的降解

IF 4.6 3区工程技术

Materials Science in Semiconductor Processing Pub Date : 2025-08-20 DOI: 10.1016/j.mssp.2025.109982

Zhongquan Jiang , Jietong Yang , Fangyan Chen, Yanhua Song, Yubin Tang

{"title":"Construction of a novel ZnWO4/MIL-53(Fe) heterojunction photocatalyst for the boosted tetracycline degradation under visible-light irradiation","authors":"Zhongquan Jiang , Jietong Yang , Fangyan Chen, Yanhua Song, Yubin Tang","doi":"10.1016/j.mssp.2025.109982","DOIUrl":"10.1016/j.mssp.2025.109982","url":null,"abstract":"<div><div>Advanced photocatalytic technology plays a vital role in addressing organic pollutant degradation, and developing highly efficient heterojunction photocatalysts is one of the research hotspots in the field of photocatalysis. Herein, we integrated the merits of ZnWO<sub>4</sub> nanoparticles and spindle-shaped MIL-53(Fe) to construct a novel ZnWO<sub>4</sub>/MIL-53(Fe) heterojunction. The fabricated ZnWO<sub>4</sub>/MIL-53(Fe) underwent a variety of characterization. An evaluation was conducted on the photocatalytic activity and stability of ZnWO<sub>4</sub>/MIL-53(Fe) toward tetracycline (TC) degradation. Based on the band alignment and the production of active species, the photocatalytic mechanism and interfacial charge transfer mode were proposed. The prepared ZnWO<sub>4</sub>/MIL-53(Fe) composites exhibit high photocatalytic activity under visible light. The optimum composites ZnM-20 achieves the highest degradation efficiency of TC, significantly outperforming the individual components ZnWO<sub>4</sub> and MIL-53(Fe). The photocatalytic degradation rate constant for TC was determined as 0.01221 min<sup>−1</sup>, which is 28.5 and 58.8 times that of MIL-53(Fe) and ZnWO<sub>4</sub>, respectively. The improvement in the catalytic activity of ZnM-20 is attributed to the high visible-light absorption ability, significantly enlarged specific surface area, and the greatly accelerated charge separation and migration due to the formation of the heterostructure between ZnWO<sub>4</sub> and MIL-53(Fe) and the cyclic redox reactions of Fe(III)/Fe(II) in MIL-53(Fe). ZnWO<sub>4</sub>/MIL-53(Fe) presents good stability and reusability. The light-excited charge carriers migrate in the heterojunction interface complies with Type-II transfer mechanism. This work provides a meaningful strategy for developing efficient photocatalysts for environmental remediation.</div></div>","PeriodicalId":18240,"journal":{"name":"Materials Science in Semiconductor Processing","volume":"200 ","pages":"Article 109982"},"PeriodicalIF":4.6,"publicationDate":"2025-08-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144864300","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

MoO3/Y2O3 n-n heterojunction for enhanced triethylamine gas sensor 用于增强三乙胺气体传感器的MoO3/Y2O3 n-n异质结

IF 4.6 3区工程技术

Materials Science in Semiconductor Processing Pub Date : 2025-08-19 DOI: 10.1016/j.mssp.2025.109965

Abu Bakker Md Rahmatullah, Zhihua Zhao, Tao Zhang, Chao Qiu, Jingjing Tang, Runpu Zhao, Xin Tong, Lan Wu

引用次数: 0

Current status on optimizing solder wettability from substrate surface treatment, alloying solder, flux, and process environments 从基板表面处理、合金焊料、助焊剂和工艺环境等方面优化焊料润湿性的现状

IF 4.6 3区工程技术

Materials Science in Semiconductor Processing Pub Date : 2025-08-18 DOI: 10.1016/j.mssp.2025.109978

Qi Li , Zezheng Li , Han Yan , Zhenyi Ren , Changxun Li , Aidong Liu , Wenxuan Pang , Guanheng Ren , Mingqing Liao , Rongmei Zhang , Fengjiang Wang

{"title":"Current status on optimizing solder wettability from substrate surface treatment, alloying solder, flux, and process environments","authors":"Qi Li , Zezheng Li , Han Yan , Zhenyi Ren , Changxun Li , Aidong Liu , Wenxuan Pang , Guanheng Ren , Mingqing Liao , Rongmei Zhang , Fengjiang Wang","doi":"10.1016/j.mssp.2025.109978","DOIUrl":"10.1016/j.mssp.2025.109978","url":null,"abstract":"<div><div>With the rapid advancement of electronic packaging toward high integration and miniaturization, the wettability of Sn-based solders has become increasingly critical, as it directly governs the formation of reliable metallurgical bonds and the service performance of micro-joints. This review systematically summarizes the fundamental principles and evaluation methods of solder wettability, focusing on contact angle, the core indicator regulated by the interfacial tension equilibrium described by Young's equation, along with spreading area, wetting force, and wetting time (the latter quantified via the wetting balance method). Moreover, the optimization strategies for wettability are elaborated from multiple dimensions: substrate surface treatment, including roughness control, texture design via directional microstructures to guide anisotropic spreading, and coating technology to modify surface energy and inhibit oxidation; solder alloying, which involves incorporating trace elements such as rare earths, nanoparticles, or active metals to reduce surface tension, promote interfacial reactions, and regulate intermetallic compound formation; flux formulation, where inorganic and organic fluxes function in chemical oxide removal and interfacial energy reduction; and process environment control, including temperature regulation to lower viscosity, protective atmosphere to suppress oxidation, and ultrasound-assisted technology to mechanically disrupt oxide films via the cavitation effect. These strategies, integrating substrate, solder, and process factors, provide a comprehensive theoretical framework to address the wettability limitations of lead-free solders, offering crucial technical support for the development of high-performance electronic packaging.</div></div>","PeriodicalId":18240,"journal":{"name":"Materials Science in Semiconductor Processing","volume":"200 ","pages":"Article 109978"},"PeriodicalIF":4.6,"publicationDate":"2025-08-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144861009","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

In situ synthesis of CsPbBr3 perovskite quantum dots within Pb-MOF framework for sensitive detection of Hg2+ ions in aqueous solutions 在Pb-MOF框架内原位合成CsPbBr3钙钛矿量子点，用于水溶液中Hg2+离子的灵敏检测

IF 4.6 3区工程技术

Materials Science in Semiconductor Processing Pub Date : 2025-08-17 DOI: 10.1016/j.mssp.2025.109962

Karthikeyan Manivannan, C.G. Sanjayan, Karthikeyarajan Vinothkumar, R. Shwetharani, R. Geetha Balakrishna

{"title":"In situ synthesis of CsPbBr3 perovskite quantum dots within Pb-MOF framework for sensitive detection of Hg2+ ions in aqueous solutions","authors":"Karthikeyan Manivannan, C.G. Sanjayan, Karthikeyarajan Vinothkumar, R. Shwetharani, R. Geetha Balakrishna","doi":"10.1016/j.mssp.2025.109962","DOIUrl":"10.1016/j.mssp.2025.109962","url":null,"abstract":"<div><div>CsPbBr<sub>3</sub> nanocrystals (NCs) have a high potential for use in a variety of optoelectronic applications due to their remarkable optoelectrical characteristics. The increased demand for efficient and stable materials in environmental monitoring and metal ion sensing has driven the search for innovative solutions. This study focuses on developing in-situ Pb-MOF integrated water-stable CsPbBr<sub>3</sub> perovskite system for sensing applications in aqueous media. Additionally, the study aims to advance Pb-MOF@CPQDs into hierarchical porous matrices, ultimately broadening their application potential in the sensing field. The Pb-MOF@CPQDs composite demonstrates an impressive limit of detection (LOD) of 157 nM, along with remarkable stability for up to 20 days. By overcoming the current limitations of perovskite-water instability, this work offers a robust platform for future development in environmental sensing technologies. It involves a comprehensive analysis of the structure-property relationship of this CsPbBr<sub>3</sub>@Pb-MOF (Pb-MOF@CPQDs) heterostructure using various characterization techniques. The research elucidates the formation mechanism of Pb-MOF@CPQDs composites and evaluates their water stability and sensing capabilities.</div></div>","PeriodicalId":18240,"journal":{"name":"Materials Science in Semiconductor Processing","volume":"200 ","pages":"Article 109962"},"PeriodicalIF":4.6,"publicationDate":"2025-08-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144858441","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Ultraviolet photodetectors based on non-stoichiometric amorphous Ga2O3−δ thin films deposited by radio-frequency powder sputtering 射频粉末溅射沉积非化学计量非晶Ga2O3−δ薄膜的紫外光电探测器

IF 4.6 3区工程技术

Materials Science in Semiconductor Processing Pub Date : 2025-08-16 DOI: 10.1016/j.mssp.2025.109972

Jihoon Jo , Dongwoo Kim , Okkyun Seo , Bongjin Simon Mun , Hyon Chol Kang

{"title":"Ultraviolet photodetectors based on non-stoichiometric amorphous Ga2O3−δ thin films deposited by radio-frequency powder sputtering","authors":"Jihoon Jo , Dongwoo Kim , Okkyun Seo , Bongjin Simon Mun , Hyon Chol Kang","doi":"10.1016/j.mssp.2025.109972","DOIUrl":"10.1016/j.mssp.2025.109972","url":null,"abstract":"<div><div>We report the performance of ultraviolet (UV) photodetectors based on non-stoichiometric amorphous Ga<sub>2</sub>O<sub>3−δ</sub> thin films deposited using the radio-frequency powder sputtering method. At a substrate temperature of 25 °C, the Ga<sub>2</sub>O<sub>3−δ</sub> film grew with an amorphous phase on a sapphire (0001) substrate. Hard X-ray photoelectron spectroscopy analysis revealed that the chemical composition of the as-deposited thin film was highly non-stoichiometric owing to the oxygen deficiency associated with sub-oxide Ga<sub>2</sub>O and metallic Ga species. Metal–semiconductor–metal photodetectors were fabricated, and their photoresponse properties under UV exposure were investigated. The photo-to-dark current ratio was estimated to be 2.91 × 10<sup>5</sup>. The photoresponsivity and specific detectivity were calculated to be ∼29.54 A/W and 8.95 × 10<sup>14</sup> Jones, respectively, at an applied bias of 10 V and a wavelength of 250 nm. Our results indicate that non-stoichiometric amorphous Ga<sub>2</sub>O<sub>3−δ</sub> thin films with thicknesses less than 100 nm are suitable for the fabrication of solar-blind photodetectors with self-powered characteristics.</div></div>","PeriodicalId":18240,"journal":{"name":"Materials Science in Semiconductor Processing","volume":"200 ","pages":"Article 109972"},"PeriodicalIF":4.6,"publicationDate":"2025-08-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144852452","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0