Materials Science in Semiconductor Processing最新文献

{"title":"Growth, optimization and high-temperature performance of GeO2/Ga2O3 MOSCAPs","authors":"N. Manikanthababu ,&nbsp;Subrata Karmakar ,&nbsp;Ishtiaq Firoz Shiam ,&nbsp;Injamamul Hoque Emu ,&nbsp;Ariful Haque ,&nbsp;Ravi Droopad","doi":"10.1016/j.mssp.2025.109518","DOIUrl":"10.1016/j.mssp.2025.109518","url":null,"abstract":"<div><div>In this study, GeO₂ thin films were grown by pulsed laser deposition (PLD) on β-Ga₂O₃, (<span><math><mrow><mo>−</mo><mn>201</mn></mrow></math></span>) single crystal substrates to fabricate metal-oxide-semiconductor capacitors (MOSCAPs) to investigate their properties using current-voltage (I-V) and capacitance-voltage (C-V) measurements at elevated temperatures. The amorphous nature, an ultrawide bandgap of ∼5.11 eV and the elemental compositions with their corresponding chemical states of the GeO₂ thin films were confirmed by X-ray diffraction (XRD), UV–Vis spectrometery and the x-ray photoelectron spectroscopy (XPS), respectively. The <em>Ge-3d</em> deconvoluted peak at 32.4 eV confirms the elemental bonding in GeO₂, with an additional peak found at 30.9 eV that can be attributed to a small portion of GeO_2-x. The Au/GeO₂/Ga₂O₃ MOSCAPs were fabricated to study its high-temperature performance from room temperature (RT) to 300 °C. The reverse leakage current was increased from 1.19 × 10⁻⁷ A to 3.66 × 10⁻⁴ A (nearly four orders of magnitude) as the temperature rises from RT to 300 °C. Due to the presence of oxygen vacancy in GeO_2-x, the Poole-Frenkel current conduction mechanism was utilized to determine a trap level of 0.8 V (below the conduction band of GeO₂) with an activation energy of 0.55 eV. The C–V measurements also show a significant contribution from defects in the flat-band voltage shift and the changes of the slopes indicates an increase in the oxide and interface-trapped charges. The density of oxide-trapped charges increased from 3.9 × 10¹² cm⁻² to 1.3 × 10¹³ cm⁻², as the temperature reached 300 °C. Similarly, the density of interface-trapped charges increased from 3.4 × 10¹² cm⁻² at RT to 1.1 × 10¹³ cm⁻² at 300 °C. The flat-band voltage shift and density of interface-trapped charges of GeO₂/Ga₂O₃ MOSCAPs exhibit exciting materials characteristics for next-generation high-power and high-temperature electronic devices.</div></div>","PeriodicalId":18240,"journal":{"name":"Materials Science in Semiconductor Processing","volume":"193 ","pages":"Article 109518"},"PeriodicalIF":4.2,"publicationDate":"2025-03-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143724519","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Interface trap density in ITO/Si Schottky junction photodetectors","authors":"Yaming Li ,&nbsp;Dianbo Liu ,&nbsp;Ruixi Liu ,&nbsp;Yunxiao Cui ,&nbsp;Yunfei Liu ,&nbsp;Ziyi Ma ,&nbsp;Yuewen Liu ,&nbsp;Jiaxuan Wang ,&nbsp;Ziqian Li ,&nbsp;Yusen Dong ,&nbsp;Jiaxin Li ,&nbsp;Chenxi Du ,&nbsp;Guihua Liao ,&nbsp;Chong Li","doi":"10.1016/j.mssp.2025.109482","DOIUrl":"10.1016/j.mssp.2025.109482","url":null,"abstract":"<div><div>Interface trapping is a notorious effect that is known to limit the performance of Schottky junction photodetectors. In this paper, the interface traps and mobility mechanism of silicon Schottky junction photodetectors were studied with two different electrode structures, namely, field and Schottky structures. The dark current of the devices mainly originated from the junction area-dependent dark current. The characteristic tunneling energies of the devices with field and Schottky structures were 0.095 and 0.102eV, respectively, and their activation energies were 0.193 and 0.294eV, respectively, which are less than half the band gap of silicon. These values are consistent with the devices displaying a trap-assisted tunneling (TAT) mechanism. An equivalent circuit model of metal–insulator–semiconductor interface traps was constructed. The interface trap densities of the devices with field and Schottky structures were calculated to be 1.37 × 10¹⁰ and 3.96 × 10¹¹/(cm²∙eV), respectively. Thus, the field structure can effectively suppress the current arising from trap-assisted tunneling.</div></div>","PeriodicalId":18240,"journal":{"name":"Materials Science in Semiconductor Processing","volume":"193 ","pages":"Article 109482"},"PeriodicalIF":4.2,"publicationDate":"2025-03-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143724517","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Enhanced wide band spectral photodetection (UV-NIR) and high detectivity investigated in topological p-TlBiSe2/n-ITO heterojunction","authors":"Gyanendra Kumar Maurya ,&nbsp;Sandeep Kumar Verma ,&nbsp;Roshani Singh ,&nbsp;Satendra Kumar ,&nbsp;Vipin Kumar ,&nbsp;Rachana Kumar ,&nbsp;Pramod Kumar","doi":"10.1016/j.mssp.2025.109513","DOIUrl":"10.1016/j.mssp.2025.109513","url":null,"abstract":"<div><div>Heterojunctions comprised of topological insulator material such as TlBiSe₂ have sparked intense study attention due to their diverse and unique characteristics and functionalities. The emergence of topological heterojunction can result in a p-n junction at the interfaces having a strong crucial potential barrier that enhances the photodetection capabilities of topological insulators. This study enlightens the successful fabrication and characterization of a novel heterojunction photodetector based on topological insulator p-TlBiSe₂/n-ITO, demonstrated remarkable photodetection abilities across a wide spectral range from ultraviolet (UV) to near-infrared (NIR). The unique topological properties of TlBiSe₂, combined with the excellent conductivity of ITO, contribute to enhanced responsivity and detectivity. Detailed analysis revealed high photodetection performance, with strong spectral responsivity, external quantum efficiency, and fast response time in detecting wavelengths ranging from 200 nm to 1000 nm, The high value of responsivity 1357 A/W and impressive detectivity value of <span><math><mrow><mn>2.89</mn><mo>×</mo><msup><mn>10</mn><mn>12</mn></msup></mrow></math></span> Jones makes this heterojunction highly suitable for applications requiring broad-spectrum detection. These findings highlight the potential of p-TlBiSe₂/n-ITO heterojunctions for next-generation photodetectors in UV and NIR applications, offering a promising platform for future optoelectronic devices.</div></div>","PeriodicalId":18240,"journal":{"name":"Materials Science in Semiconductor Processing","volume":"193 ","pages":"Article 109513"},"PeriodicalIF":4.2,"publicationDate":"2025-03-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143705003","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"High resistive switching current ratio, excellent endurance and stability for bistable non-volatile memristor and photosensing devices based on perovskite/titanium dioxide embedded in polyvinyl alcohol matrix","authors":"Garima Poply ,&nbsp;Manisha ,&nbsp;Deepak Kumar ,&nbsp;Tanmoy Majumder ,&nbsp;Tanuj Kumar ,&nbsp;Vishal Singh ,&nbsp;Jugal Bori ,&nbsp;Jehova Jire L. Hmar","doi":"10.1016/j.mssp.2025.109511","DOIUrl":"10.1016/j.mssp.2025.109511","url":null,"abstract":"&lt;div&gt;&lt;div&gt;This study demonstrates the excellent endurance and stability of a high resistive switching current ratio for bistable non-volatile memristor and photosensing of a fabricated CH&lt;sub&gt;3&lt;/sub&gt;NH&lt;sub&gt;3&lt;/sub&gt;PbBr&lt;sub&gt;3&lt;/sub&gt;-TiO&lt;sub&gt;2&lt;/sub&gt;/PVA/FTO-coated glass substrate. Structural, optical, and electrical properties of fabricated devices TiO&lt;sub&gt;2&lt;/sub&gt;/PVA/FTO-coated glass substrate (D1), CH&lt;sub&gt;3&lt;/sub&gt;NH&lt;sub&gt;3&lt;/sub&gt;PbBr&lt;sub&gt;3&lt;/sub&gt;/PVA/FTO-coated glass substrate (D2), and CH&lt;sub&gt;3&lt;/sub&gt;NH&lt;sub&gt;3&lt;/sub&gt;PbBr&lt;sub&gt;3&lt;/sub&gt;-TiO&lt;sub&gt;2&lt;/sub&gt;/PVA/FTO-coated glass substrate (D3) were examined in detail. The current-voltage (&lt;em&gt;I-V&lt;/em&gt;) characteristic of device D3 shows the bistable non-volatile resistive switching memory having an ON/OFF current ratio of ∼10&lt;sup&gt;7&lt;/sup&gt; for over 5000 sweeping cycles. Device D3 exhibited a significantly higher ON/OFF current ratio compared to devices D1 and D2. Additionally, its operating voltage was substantially lower than that of the control samples D1 and D2, making it highly suitable for low-power electronic applications. Moreover, the stability and retention measurements were performed for device D3 in terms of resistance; the ON/OFF resistance ratio was found to be ∼10&lt;sup&gt;7&lt;/sup&gt; at a read voltage of 1V. The device D3 maintained excellent stability even after continuous operation for ∼10&lt;sup&gt;5&lt;/sup&gt; s, with no significant signs of degradation. Hence, the device D3 has good endurance, stability, and a high resistive switching current ratio, which is suitable for rewriteable non-volatile memristors. Furthermore, the photocurrent, photo-detectivity, and photoresponsivity of the same devices D1, D2, and D3 were studied under broadband light illumination with an intensity of 100 mW/cm&lt;sup&gt;2&lt;/sup&gt;. Interestingly, it has been observed that the three devices show a good response of photocurrent at different voltages. The device D3 exhibited superior performance compared to D1 and D2. The values of current density under dark and light of device D3 are found to be ∼1.98 × 10&lt;sup&gt;−8&lt;/sup&gt; A/cm&lt;sup&gt;2&lt;/sup&gt; and ∼2.53 × 10&lt;sup&gt;−5&lt;/sup&gt; A/cm&lt;sup&gt;2&lt;/sup&gt;, respectively, with the corresponding ON/OFF current ratio as ∼1277. This is due to the combination of perovskite CH&lt;sub&gt;3&lt;/sub&gt;NH&lt;sub&gt;3&lt;/sub&gt;PbBr&lt;sub&gt;3&lt;/sub&gt; and TiO&lt;sub&gt;2&lt;/sub&gt; and enhanced electron-hole pair generation, resulting in increasing the concentration of the charge carrier. The responsivity and photodetectivity of devices exhibit a similar trend as photocurrent. The maximum values of responsivity and photodetectivity of device D3 have been obtained at 1V and found to be ∼2.52 × 10&lt;sup&gt;−2&lt;/sup&gt; A/W and ∼3.15 × 10&lt;sup&gt;11&lt;/sup&gt; Hz&lt;sup&gt;1/2&lt;/sup&gt;/W, respectively. Therefore, this device D3 also has the potential to be used for photosensing devices. Hence, the fabricated device D3 has excellent endurance, stability, high resistive switching current ratio, and photoresponse, which makes it an outstanding candidate for non-volatile memristor and photosensing applicatio","PeriodicalId":18240,"journal":{"name":"Materials Science in Semiconductor Processing","volume":"193 ","pages":"Article 109511"},"PeriodicalIF":4.2,"publicationDate":"2025-03-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143705002","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Photocatalytic reduction of Cr(VI) by novel shuttle-like Bi2S3 nanocrystals under visible light","authors":"Zhenning Yang ,&nbsp;Xiuyue Jin ,&nbsp;Hua Lu ,&nbsp;Shuzhi Tong,&nbsp;Jue Chen,&nbsp;Meng Deng,&nbsp;Fei Chen","doi":"10.1016/j.mssp.2025.109510","DOIUrl":"10.1016/j.mssp.2025.109510","url":null,"abstract":"<div><div>Heavy metal contamination in industrial wastewater poses a significant threat to the environment and public health. To address this issue, various nanocrystalline materials have emerged as promising photocatalysts for water treatment. In this research, by using ultra-high molecular weight of polyvinylpyrrolidone (PVP), a novel shuttle-like Bi₂S₃ nanocrystal was synthesized via a facile hydrothermal method. The material exhibited outstanding performance in water treatment, particularly in the photocatalytic reduction of Cr(VI) to Cr(III) under visible light. The photocatalytic performance of high concentration Cr(VI) (10 mg/L) reduction efficiency with shuttle-like Bi₂S₃ can reach near 100 % in only 5 min (k = 1.4754 min⁻¹). In-situ oxidants capture experiments confirmed ∙O²⁻ was the main active species in the reduction of Cr(VI). This study highlights a cost-effective and scalable approach to fabricating Bi₂S₃ nanocrystals, offering significant potential for morphology control of nanomaterials and industrial water treatment applications for heavy metal remediation.</div></div>","PeriodicalId":18240,"journal":{"name":"Materials Science in Semiconductor Processing","volume":"193 ","pages":"Article 109510"},"PeriodicalIF":4.2,"publicationDate":"2025-03-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143724515","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Recent advancement in ScAlN/GaN high electron mobility transistors: Materials, properties, and device performance","authors":"P. Murugapandiyan ,&nbsp;S. Maheswari ,&nbsp;A.S. Augustine Fletcher ,&nbsp;G. Saranya ,&nbsp;P. Anandan","doi":"10.1016/j.mssp.2025.109509","DOIUrl":"10.1016/j.mssp.2025.109509","url":null,"abstract":"<div><div>This comprehensive review examines the significant advancements in Scandium Aluminum Nitride/Gallium Nitride (ScAlN/GaN) High Electron Mobility Transistors (HEMTs). The incorporation of scandium in conventional AlN barriers has revolutionized III-nitride device technology through enhanced polarization effects and superior electrical properties. We analyze the evolution of material growth techniques, device architectures, and performance metrics, demonstrating remarkable improvements in device characteristics. The review encompasses detailed comparisons with emerging technologies, and substrate alternatives. Through analysis of material parameters, growth conditions, and device physics, we provide insights into the fundamental mechanisms enabling these performance enhancements. Recent developments in barrier layer optimization and novel gate architectures have significantly improved performance.</div></div>","PeriodicalId":18240,"journal":{"name":"Materials Science in Semiconductor Processing","volume":"193 ","pages":"Article 109509"},"PeriodicalIF":4.2,"publicationDate":"2025-03-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143696909","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Toward characterization and assessment of MoS2 fundamental device properties by photoluminescence","authors":"Thomas Nuytten,&nbsp;Albert Minj,&nbsp;Stefanie Sergeant,&nbsp;Quentin Smets,&nbsp;Steven Brems,&nbsp;Pawan Kumar,&nbsp;Souvik Ghosh,&nbsp;Tom Schram,&nbsp;Sreetama Banerjee,&nbsp;Anastasiia Kruv,&nbsp;Dennis van Dorp,&nbsp;Benjamin Groven,&nbsp;Pierre Morin","doi":"10.1016/j.mssp.2025.109489","DOIUrl":"10.1016/j.mssp.2025.109489","url":null,"abstract":"<div><div>The continuous expansion of two-dimensional materials research since the first developments of over 15 years ago has enabled tremendous progress in the fundamental understanding of their properties and behavior. The promises held by these materials to facilitate scaling beyond silicon-based device architectures are still valid, but the manufacturability and integration with silicon technology remain challenging. On the metrology side, characterization of the device channel and assessment of the expected performance is lacking, at least in a fully non-destructive and process line-compatible implementation. The current paper demonstrates a clear correlation between metrics associated with the transistor performance on one hand, and parameters from photoluminescence spectra on the other. The concept is demonstrated on state-of-the-art 300 mm process MoS₂ devices, without the need for specific measurement conditions or sample preparation. Being truly non-contact and relatively fast, this analysis provides the community with a potential route toward non-invasive material quality assessment, applicable at several stages of the process and with a direct connection to device performance.</div></div>","PeriodicalId":18240,"journal":{"name":"Materials Science in Semiconductor Processing","volume":"193 ","pages":"Article 109489"},"PeriodicalIF":4.2,"publicationDate":"2025-03-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143683241","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Effect and mechanism of thiourea on indium electrocrystallization in sulfate electrolyte","authors":"Zeyu Wang ,&nbsp;Xun Wang ,&nbsp;Bo Li ,&nbsp;Yonggang Wei ,&nbsp;Hua Wang","doi":"10.1016/j.mssp.2025.109493","DOIUrl":"10.1016/j.mssp.2025.109493","url":null,"abstract":"<div><div>In the realm of advanced technologies, indium is a critical metal with wide-ranging applications, and the efficient purification of indium has emerged as a topic of significant industrial interest. This study investigates the use of gelatin and thiourea as additives to mitigate the adverse effects of dendrite growth during indium electrolysis. Additionally, agitation was incorporated into the electrolysis process to further enhance the morphology of cathodic indium deposition. Under optimal conditions of 0.5 g/L gelatin and 0.05 g/L thiourea, current efficiency increased by 6.2 %, while the recovery improved by 5.7 %. Scanning electron microscopy (SEM) was employed to examine the dendritic growth of indium on titanium electrodes. The findings indicated that the combination of gelatin, thiourea, and stirring led to a more compact and uniform coating. The electrodeposition mechanisms of indium in various electrolytic environments were further elucidated through cyclic voltammetry and chronoamperometry, revealing that under the influence of gelatin and thiourea, the nucleation process on titanium shifted to a continuous mode.</div></div>","PeriodicalId":18240,"journal":{"name":"Materials Science in Semiconductor Processing","volume":"193 ","pages":"Article 109493"},"PeriodicalIF":4.2,"publicationDate":"2025-03-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143696798","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Effect of co-doping on performance of solution-processed InLiAlO thin film transistors","authors":"Weixin Cheng ,&nbsp;Honglong Ning ,&nbsp;Han Li ,&nbsp;Xiaoqin Wei ,&nbsp;Zeneng Deng ,&nbsp;Zhihao Liang ,&nbsp;Xiao Fu ,&nbsp;Rui Zhou ,&nbsp;Rihui Yao ,&nbsp;Junbiao Peng","doi":"10.1016/j.mssp.2025.109508","DOIUrl":"10.1016/j.mssp.2025.109508","url":null,"abstract":"<div><div>Indium oxide thin film transistors have a moderate bandgap, high carrier concentration, and mobility, enabling their use in high currents. But they may be hard to turn off and have high leakage current, threshold voltage, and power consumption. These can be solved by co-doping, which can control the defects and quality of the films. In this study, InLiAlO thin films and TFTs with Li:Al ratios of 1:0, 2:1, 1:1, 1:2, and 0:1 (Li + Al = 10 at%) were prepared using spin-coating. It is found that both dopants significantly reduced defects and oxygen vacancies, and increased compactness. Moreover, with the increase of Al addition, the crystallization was inhibited. Therefore, the corresponding device performance should be improved. The undoped device had moderate mobility, low <em>I</em>_on/<em>I</em>_off, and high subthreshold swing (SS). The TFT doped with 10 at% Li exhibited higher mobility and lower SS, while the one with 10 at% Al doping showed decreased mobility, and improved <em>I</em>_on/<em>I</em>_off and SS. It is inferred that lithium doping promoted the transformation of hydroxides to oxides, forming more oxides and reducing hydroxide-related defects, but may generate oxygen vacancies. The aluminum doping suppressed the formation of oxygen vacancies and inhibited crystallization. After optimization, Li:Al = 2:1 is the best doping ratio, featuring a saturation mobility of 5.30 cm² V⁻¹·s⁻¹, a current on/off ratio of 7.48 × 10⁵, and a sub-threshold swing of 0.25 V/decade. The corresponding films have high smoothness and density, indicating high quality and fewer internal voids. It is suggested that co-doping is a promising strategy for improving the performance of indium oxide-based TFTs.</div></div>","PeriodicalId":18240,"journal":{"name":"Materials Science in Semiconductor Processing","volume":"193 ","pages":"Article 109508"},"PeriodicalIF":4.2,"publicationDate":"2025-03-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143696908","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Sonochemical assisted auto-combustion synthesis of NiCo2O4/NiO/rGO nanocomposite and examination of photocatalytic ability for antibiotics photo-degradation","authors":"Seyed Ali Hosseini Moradi ,&nbsp;Nader Ghobadi ,&nbsp;Seyed Milad Tabatabaeinejed","doi":"10.1016/j.mssp.2025.109490","DOIUrl":"10.1016/j.mssp.2025.109490","url":null,"abstract":"<div><div>In this research, an attempt was made to synthesize an efficient nanocomposite for photocatalytic degradation of antibiotics. NiCo₂O₄/NiO/rGO nanocomposite was synthesized with auto-combustion method. Various parameter affected of NiCo₂O₄/NiO/rGO morphology like type of green fuel, molar ratio of green fuel. Morphology, shape size, and surface strongly affect the optical, electrochemical, catalytic, and magnetic properties of oxide form of nanostructured materials. According to the Taouk equation, NiCo₂O₄/NiO/rGO nanocomposite possess a suitable bandgap (2.8 eV) in the visible region. Ability of NiCo₂O₄/NiO/rGO nanocomposite for antibiotics elimination was surveyed. Photocatalytic experiments results exposed that prepared nanocomposite could a wide range of pollution efficiency. For example, the tetracycline elimination efficiency was 92.9 %. The conceivable mechanism of antibiotic degradation by photocatalytic performance was studied and it is concluded that OH• helps visible light-assisted elimination of contamination. Also, the probable reaction constant rate (k) of the pollutant was determined by the Langmuir–Hinshelwood reaction, showing that the rate constant for the photocatalytic application was achieved in a k = 0.01310 min⁻¹.</div></div>","PeriodicalId":18240,"journal":{"name":"Materials Science in Semiconductor Processing","volume":"193 ","pages":"Article 109490"},"PeriodicalIF":4.2,"publicationDate":"2025-03-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143683242","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}