Materials Science in Semiconductor Processing最新文献_第10页

First-principles analysis of potassium and magnesium adsorption on an innovative VC4 monolayer 新型VC4单层膜对钾、镁吸附的第一性原理分析

IF 4.2 3区工程技术

Materials Science in Semiconductor Processing Pub Date : 2025-05-01 DOI: 10.1016/j.mssp.2025.109602

Yujia Luo , Xinying Jiang , Qiong Peng , Javed Rehman , Mohib Ullah , Saiful Arifin Shafiee , Lin Tao , Muhammad Faizan , Ammar M. Tighezza , Mehwish K. Butt

{"title":"First-principles analysis of potassium and magnesium adsorption on an innovative VC4 monolayer","authors":"Yujia Luo , Xinying Jiang , Qiong Peng , Javed Rehman , Mohib Ullah , Saiful Arifin Shafiee , Lin Tao , Muhammad Faizan , Ammar M. Tighezza , Mehwish K. Butt","doi":"10.1016/j.mssp.2025.109602","DOIUrl":"10.1016/j.mssp.2025.109602","url":null,"abstract":"<div><div>Mg-ion batteries (MgIBs) and K-ion batteries (KIBs) are considered excellent energy storage options due to their affordability and similarity to Li-ion batteries (LIBs) regarding the rocking chair mechanism. Nevertheless, a significant challenge exists in the form of a shortage of suitable electrode materials that can provide high performance for KIBs and MgIBs. Our study utilized first-principles calculations based on density functional theory (DFT) to evaluate the potential of the VC<sub>4</sub> monolayer as an anode material for MgIBs and KIBs. The results indicate that Mg and K adsorption on the surface of VC<sub>4</sub> is associated with negative favorable energies. Moreover, the VC<sub>4</sub> monolayer can effectively achieve double-layer adsorption for K/Mg on both sides of its surface. The VC<sub>4</sub> exhibits a remarkably high theoretical capability of 812 mA h/g for KIBs and 1624 mA h/g for MgIBs. These exceptional capacities for KIBs and MgIBs primarily arise from the minimal Coulombic repulsion forces between the VC<sub>4</sub> sheet and K/Mg. Moreover, K and Mg portray large diffusivity on VC<sub>4</sub>, illustrated by low energy barriers of 0.15 eV and 0.09 eV, respectively. Moreover, the open circuit voltages (OCV), measuring 0.28 V for MgIBs and 0.49 V for KIBs, are notably lower than in previous studies. Despite the relatively large size of K<sup>+</sup>/Mg<sup>+</sup> ions, the maximum alteration in VC<sub>4</sub> lattice parameters stands at 6.01 % and 6.8 %, respectively. This observation highlights the material's structural stability, ensuring robust cycling performance for KIBs and MgIBs. These results underscore the potential of the VC<sub>4</sub> monolayer as a novel candidate for KIBs and MgIBs.</div></div>","PeriodicalId":18240,"journal":{"name":"Materials Science in Semiconductor Processing","volume":"195 ","pages":"Article 109602"},"PeriodicalIF":4.2,"publicationDate":"2025-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143890624","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Nanoengineering silicon materials by metal-assisted chemical etching for thermal energy harvesting 金属辅助化学蚀刻纳米工程硅材料的热能收集

IF 4.2 3区工程技术

Materials Science in Semiconductor Processing Pub Date : 2025-04-30 DOI: 10.1016/j.mssp.2025.109622

Nguyen Van Toan , Ngoc Dang Khoa Tran , Truong Thi Kim Tuoi , Suhana Mohd Said , Mohd Faizul Mohd Sabri , Takahito Ono

{"title":"Nanoengineering silicon materials by metal-assisted chemical etching for thermal energy harvesting","authors":"Nguyen Van Toan , Ngoc Dang Khoa Tran , Truong Thi Kim Tuoi , Suhana Mohd Said , Mohd Faizul Mohd Sabri , Takahito Ono","doi":"10.1016/j.mssp.2025.109622","DOIUrl":"10.1016/j.mssp.2025.109622","url":null,"abstract":"<div><div>Low-thermal heat waste energy harvesting represents a transformative technology for powering wireless sensing networks and electronic devices, particularly in remote and challenging environments. This review comprehensively examines the utilization of nanoporous silicon materials for thermal energy harvesting applications, focusing on their fabrication through metal-assisted chemical etching (MACE) and their unique properties that enhance energy conversion efficiency. The high surface area-to-volume ratio of nanoporous silicon significantly improves heat interaction and thermal-to-electrical energy conversion. We analyze the material properties and fabrication methods of nanoporous silicon, providing detailed evaluation of its performance in thermal energy harvesting applications. Experimental data demonstrates that nanoporous silicon achieves thermoelectric figures of merit (ZT) comparable to traditional materials while offering environmental and economic advantages. The review presents two innovative approaches for thermoelectric generators: solid-state configurations and ionic liquid implementations. Through systematic material evaluation and application demonstrations, we establish nanoporous silicon as an efficient and environmentally friendly solution for thermal energy harvesting. Our findings indicate that nanoporous silicon not only addresses the limitations of conventional thermoelectric materials but also provides a scalable and sustainable approach for enhancing energy harvesting system performance. This research contributes to advancing sustainable energy technologies and improving the viability of wireless sensing networks across various environmental conditions.</div></div>","PeriodicalId":18240,"journal":{"name":"Materials Science in Semiconductor Processing","volume":"195 ","pages":"Article 109622"},"PeriodicalIF":4.2,"publicationDate":"2025-04-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143886369","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Improvement of hydrogenated nanocrystalline silicon rear emitter with low-high gradient doping for efficient silicon heterojunction solar cell 低-高梯度掺杂对高效硅异质结太阳能电池氢化纳米晶硅后发射极的改进

IF 4.2 3区工程技术

Materials Science in Semiconductor Processing Pub Date : 2025-04-29 DOI: 10.1016/j.mssp.2025.109616

Xiaohua Xu , Lilan Wen , Lei Zhao , Xiaotong Li , Xiaojie Jia , Shiyu Qu , Guanghong Wang , Changtao Peng , Ke Xin , Jihong Xiao , Su Zhou , Daoren Gong , Wenjing Wang

{"title":"Improvement of hydrogenated nanocrystalline silicon rear emitter with low-high gradient doping for efficient silicon heterojunction solar cell","authors":"Xiaohua Xu , Lilan Wen , Lei Zhao , Xiaotong Li , Xiaojie Jia , Shiyu Qu , Guanghong Wang , Changtao Peng , Ke Xin , Jihong Xiao , Su Zhou , Daoren Gong , Wenjing Wang","doi":"10.1016/j.mssp.2025.109616","DOIUrl":"10.1016/j.mssp.2025.109616","url":null,"abstract":"<div><div>A low-high gradient doping bilayer stack of boron-doped hydrogenated nanocrystalline silicon (nc-Si:H(p)) was developed to modify the rear emitter for the silicon heterojunction (SHJ) solar cell on n-type crystalline silicon (c-Si(n)) substrate via depositing the first nc-Si:H(p) layer (p<sub>1</sub>) with low boron doping, followed by depositing the second nc-Si:H(p) layer (p<sub>2</sub>) with high boron doping. The p<sub>1</sub> layer contributes to improve the short-circuit current density (<em>J</em><sub>SC</sub>) of the solar cell due to its easily obtained high crystallinity (<em>χ</em><sub>C</sub>). The p<sub>2</sub> layer can effectively enhance the solar cell fill factor (FF) and open-circuit voltage (<em>V</em><sub>OC</sub>) by improving its contact performance via the high doping, facilitated by the appropriate p<sub>1</sub> layer. Based on adjusting the doping and the thickness combination of the p<sub>1</sub> and p<sub>2</sub> layers, combining with the interface modification on both sides of the p<sub>1</sub>/p<sub>2</sub> stack, a 25.36 % efficient SHJ solar cell was successfully fabricated on the commercial large-area 166 mm × 166 mm (M6) c-Si substrate.</div></div>","PeriodicalId":18240,"journal":{"name":"Materials Science in Semiconductor Processing","volume":"195 ","pages":"Article 109616"},"PeriodicalIF":4.2,"publicationDate":"2025-04-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143883005","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

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Bright and recoverably stable green emission of (Et2NH)PbBr3 perovskite nanocrystals encapsulated within metal organic framework （Et2NH）PbBr3钙钛矿纳米晶体包裹在金属有机框架内，发出明亮且可恢复稳定的绿色发光

IF 4.2 3区工程技术

Materials Science in Semiconductor Processing Pub Date : 2025-04-29 DOI: 10.1016/j.mssp.2025.109611

Tayebeh Hemmati , Reza Sahraei , Ali Naghipour , Ehsan Soheyli , Sadaf Samiei

{"title":"Bright and recoverably stable green emission of (Et2NH)PbBr3 perovskite nanocrystals encapsulated within metal organic framework","authors":"Tayebeh Hemmati , Reza Sahraei , Ali Naghipour , Ehsan Soheyli , Sadaf Samiei","doi":"10.1016/j.mssp.2025.109611","DOIUrl":"10.1016/j.mssp.2025.109611","url":null,"abstract":"<div><div>To advance the development of optoelectronic structures, it is essential to design novel compositions of luminescent metal halide perovskite nanocrystals (PNCs), which are at the forefront of current research endeavors. This study addresses the instability issues associated with PNCs by utilizing metal-organic frameworks (MOFs). A straightforward methodology is successfully proposed for the synthesis of (Et<sub>2</sub>NH)PbBr<sub>3</sub>@Uio-67 composites, involving the separate formation of the organic salt (Et<sub>2</sub>)NHBr and PbBr<sub>2</sub>-MOFs. Subsequently, (Et<sub>2</sub>)NHBr in methanol is introduced to PbBr<sub>2</sub>@Uio-67 in toluene to yield a final composite comprising nanoscale PNCs embedded within the MOF matrix. The resulting samples exhibit a bright green emission at approximately 536 nm, with a narrow full width at half maximum (FWHM) of 20 nm and an emission quantum yield of 51.4 %. The porosity of the composite was characterized using Brunauer–Emmett–Teller (BET) measurements, revealing pore diameters ranging from 3.5 to 3.9 nm. Emission decay profiles were well-fitted to a biexponential function, indicating an average lifetime of 17.6 ns. The enhanced stability of the composite was demonstrated through prolonged storage, UV-irradiation, and thermal treatment, confirming the effective passivating role of Uio-67, which maintained recoverable emission even at elevated temperatures (140 °C) with no change in emission wavelength. The simplicity and versatility of the reaction method, conducted at low temperatures without the need for an inert atmosphere, combined with the strong and pure green emission and significant durability under harsh conditions, position the fabricated nanocomposite as a promising candidate for light panel display applications.</div></div>","PeriodicalId":18240,"journal":{"name":"Materials Science in Semiconductor Processing","volume":"195 ","pages":"Article 109611"},"PeriodicalIF":4.2,"publicationDate":"2025-04-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143883006","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Enhancing the uniformity and stability of graphene-based devices via Si3N4 film-assisted patterning 通过Si3N4薄膜辅助图像化提高石墨烯基器件的均匀性和稳定性

IF 4.2 3区工程技术

Materials Science in Semiconductor Processing Pub Date : 2025-04-29 DOI: 10.1016/j.mssp.2025.109618

Zebin Li , Haowei Mi , Mengwei Li , Junqiang Wang , Ningning Su

{"title":"Enhancing the uniformity and stability of graphene-based devices via Si3N4 film-assisted patterning","authors":"Zebin Li , Haowei Mi , Mengwei Li , Junqiang Wang , Ningning Su","doi":"10.1016/j.mssp.2025.109618","DOIUrl":"10.1016/j.mssp.2025.109618","url":null,"abstract":"<div><div>Owing to its remarkable physical attributes and substantial potential for use in electronic devices, graphene has garnered significant interest. However, conventional photolithography involving photoresist masks often results in organic residues on the graphene surface. Moreover, exposed graphene is highly vulnerable to doping by environmental factors such as H<sub>2</sub>O, O<sub>2</sub>, and impurities, which can severely degrade device performance. In this paper, an innovative process is proposed to deposit a silicon nitride (Si<sub>3</sub>N<sub>4</sub>) film on the graphene surface for patterning, while retaining the film as a protective layer. Scanning electron microscopy (SEM), atomic force microscopy (AFM) and Raman spectroscopy tests show that the process effectively avoids photoresist residues and there is almost no damage to graphene compared to bare graphene. Electrical tests show that the Si<sub>3</sub>N<sub>4</sub> film-assisted patterning process significantly improves the device resistance consistency (29.36 % reduction in standard deviation) and stability due to the isolation of external impurities. High-temperature electrical tests show that the resistance consistency and stability of graphene temperature sensors processed by the Si<sub>3</sub>N<sub>4</sub> film-assisted patterning process are still outstanding at high temperatures. This study not only opens up a new path for the preparation of graphene electronic devices, but also provides a solid technical support for the realization of high-performance and high-stability graphene electronic devices.</div></div>","PeriodicalId":18240,"journal":{"name":"Materials Science in Semiconductor Processing","volume":"195 ","pages":"Article 109618"},"PeriodicalIF":4.2,"publicationDate":"2025-04-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143886891","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

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Synthesis and performance enhancement of Ni–Mo/g-C3N4 bimetallic composites electrocatalysts Ni-Mo /g-C3N4双金属复合电催化剂的合成及性能增强

IF 4.2 3区工程技术

Materials Science in Semiconductor Processing Pub Date : 2025-04-29 DOI: 10.1016/j.mssp.2025.109625

Yu-Chin Shen , Dipti R. Sahu , Jow-Lay Huang , Yu-Min Shen , Sheng-Chang Wang

{"title":"Synthesis and performance enhancement of Ni–Mo/g-C3N4 bimetallic composites electrocatalysts","authors":"Yu-Chin Shen , Dipti R. Sahu , Jow-Lay Huang , Yu-Min Shen , Sheng-Chang Wang","doi":"10.1016/j.mssp.2025.109625","DOIUrl":"10.1016/j.mssp.2025.109625","url":null,"abstract":"<div><div>Graphitic carbon nitride (g-C<sub>3</sub>N<sub>4</sub>) and Ni-Mo-based electrocatalysts have garnered significant attention for their promising performance as photocatalysts and their excellent activity in alkaline hydrogen evolution reactions (HER). In this study, Ni<sub>x</sub>Mo<sub>y</sub>/g-C<sub>3</sub>N<sub>4</sub> composites were successfully synthesized by combining a simple thermal polymerization method with a subsequent wet-chemical process and solid-state sintering. Various samples were prepared by adjusting both the loading of active sites and the Ni/Mo molar ratio, and their structures and compositions were analyzed using Fourier-transform infrared spectroscopy (FT-IR), X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), transmission electron microscopy (TEM), and cyclic voltammetry (CV). XRD patterns revealed a reduction in the intensity of the g-C<sub>3</sub>N<sub>4</sub> (002) diffraction peak, indicating altered crystallinity. Electrochemical surface area (ECSA) analysis confirmed that increasing the active site content, peaking at a 20 wt% addition. Further investigation showed that at a Ni/Mo molar ratio of 4:1, the 20 wt% Ni<sub>2.0</sub>Mo<sub>0.5</sub>/g-C<sub>3</sub>N<sub>4</sub> composite achieved the lowest overpotential and Tafel slope in 1 M KOH—462 mV and 98 mV/dec, respectively—owing to the synergistic effect of Ni–Mo and the prominent Ni(111) facet. Moreover, g-C<sub>3</sub>N<sub>4</sub> effectively prevented the spontaneous combustion of Ni<sub>x</sub>Mo<sub>y</sub> in air, ensuring the stability of the composite.</div></div>","PeriodicalId":18240,"journal":{"name":"Materials Science in Semiconductor Processing","volume":"195 ","pages":"Article 109625"},"PeriodicalIF":4.2,"publicationDate":"2025-04-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143886370","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Impact of triangle-like defect in 4H-SiC epitaxial layers on the electrical characteristics of SiC bipolar device 4H-SiC外延层中三角形缺陷对SiC双极器件电特性的影响

IF 4.2 3区工程技术

Materials Science in Semiconductor Processing Pub Date : 2025-04-29 DOI: 10.1016/j.mssp.2025.109571

Lei Xu , Hailiang Yan , Xindi Hong , Tao Zhu , Rui Jin

{"title":"Impact of triangle-like defect in 4H-SiC epitaxial layers on the electrical characteristics of SiC bipolar device","authors":"Lei Xu , Hailiang Yan , Xindi Hong , Tao Zhu , Rui Jin","doi":"10.1016/j.mssp.2025.109571","DOIUrl":"10.1016/j.mssp.2025.109571","url":null,"abstract":"<div><div>Silicon carbide (SiC) power devices with intrinsic material advantages over silicon have attracted tremendous attention in the past two decades, yet elucidating the failure mechanism of devices induced by defects remains intractable challenges. This work systematically investigates the relationship between triangle-like defects and electrical performance of 1200V 4H-SiC Merged PiN Schottky Bipolar (MPS) on four complete wafers. Triangle-like defects are categorized into two types named Pit Triangle and Shallow Triangle respectively according to their surface topography. Through comprehensive electrical characterization and microstructural analysis, we establish that these geometrically similar defects exhibit fundamentally different impacts on device functionality. The results of I-V measurement display that the Pit Triangle defects can markedly increase leakage current, whereas Shallow Triangle defects cause negligible performance degradation. In addition, it is noted that diverse failure cases are caused by different locations of the Pit Triangle defect on the device. Through the integration of microstructural characterization and energy band theory, the underlying mechanism by which Pit Triangle defects act as killer defects for SiC power device has been mechanistically elucidated. This work further explores the triangle-like defects and analyzes the correlation between device failure with triangle-like defects, which are essential towards enhancing manufacturing yield and operational reliability of SiC power devices.</div></div>","PeriodicalId":18240,"journal":{"name":"Materials Science in Semiconductor Processing","volume":"195 ","pages":"Article 109571"},"PeriodicalIF":4.2,"publicationDate":"2025-04-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143883007","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Impact of conductor losses and metal overetching on integrated superconducting coplanar waveguide resonators 导体损耗和金属过蚀对集成超导共面波导谐振器的影响

IF 4.2 3区工程技术

Materials Science in Semiconductor Processing Pub Date : 2025-04-28 DOI: 10.1016/j.mssp.2025.109614

Daniel Rocha-Aguilera , Gabriela Méndez-Jerónimo , Joel Molina-Reyes

{"title":"Impact of conductor losses and metal overetching on integrated superconducting coplanar waveguide resonators","authors":"Daniel Rocha-Aguilera , Gabriela Méndez-Jerónimo , Joel Molina-Reyes","doi":"10.1016/j.mssp.2025.109614","DOIUrl":"10.1016/j.mssp.2025.109614","url":null,"abstract":"<div><div>In this work, basic guidelines for the development of superconducting coplanar waveguide resonators (CPWR) suitable for quantum computing applications are presented along with simulation and experimental results that highlight the impact of pattern definition. CPWR with resonance frequencies between 5 and 20 GHz were designed, simulated, modeled using an RLC equivalent circuit model and a transmission line model, and fabricated using Al/Si and Al/SiO<sub>2</sub>/Si structures. Finite element simulations were done using resistivity values for Al corresponding to temperatures in the range between ambient temperature and the superconducting regime. From the simulations, the impact of conductor losses in the quality factors of the resonators was confirmed. To study the effect of the coupling structures, gap and finger coupling capacitors were considered. Results show that undercoupled and overcoupled conditions can be achieved from those coupling structures. Finally, simulations, models and ambient-temperature measurements were correlated. From this comparison, it was found that differences between experimental and theoretical data can be attributed to an imperfect photolithographic definition of the critical dimensions for Al-based CPWR, pointing out the relevance and impact of fabrication processes for integrated circuits operating in the microwave regime.</div></div>","PeriodicalId":18240,"journal":{"name":"Materials Science in Semiconductor Processing","volume":"195 ","pages":"Article 109614"},"PeriodicalIF":4.2,"publicationDate":"2025-04-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143883079","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Development of sustainable NiFe2O4/ZnO/g-C3N4 nanohybrid electrocatalyst for bi-functional HER and OER applications 可持续发展的NiFe2O4/ZnO/g-C3N4纳米杂化电催化剂的双功能HER和OER应用

IF 4.2 3区工程技术

Materials Science in Semiconductor Processing Pub Date : 2025-04-28 DOI: 10.1016/j.mssp.2025.109589

V. Siva , L. Kumaresan , P. Velusamy , Govindasamy Palanisamy , T. Chellapandi , N. Dineshbabu

{"title":"Development of sustainable NiFe2O4/ZnO/g-C3N4 nanohybrid electrocatalyst for bi-functional HER and OER applications","authors":"V. Siva , L. Kumaresan , P. Velusamy , Govindasamy Palanisamy , T. Chellapandi , N. Dineshbabu","doi":"10.1016/j.mssp.2025.109589","DOIUrl":"10.1016/j.mssp.2025.109589","url":null,"abstract":"<div><div>Water splitting by electrochemistry is a crucial technique for producing clean hydrogen. Noble metals must be replaced with long-lasting, effective, and reasonably priced electrocatalysts in the development of renewable energy technology. This work presents a hydrothermal method for creating a NiFe<sub>2</sub>O<sub>4</sub>/ZnO/g-C<sub>3</sub>N<sub>4</sub> ternary nano electrocatalyst for efficient water-splitting applications. The phase formation, morphology, chemical states, and elemental composition of the synthesized electrocatalysts were thoroughly explored. In this work, ternary nano electrocatalysts showed enhanced electrochemical performance. Specifically, NiFe<sub>2</sub>O<sub>4</sub>/ZnO/g-C<sub>3</sub>N<sub>4</sub> electrocatalyst exhibited enhanced OER activity with an overpotential of 224 mV at 10 mA/cm<sup>2</sup> current density and a Tafel slope value of 120 mV/dec. For HER, the electrocatalyst showed 120 mV as overpotential at a current density of 10 mA/cm<sup>2</sup> with a Tafel slope value of 121 mV/dec. These results highlight the advantages of hybridizing metal oxides with carbon-based counterparts for OER and HER.</div></div>","PeriodicalId":18240,"journal":{"name":"Materials Science in Semiconductor Processing","volume":"195 ","pages":"Article 109589"},"PeriodicalIF":4.2,"publicationDate":"2025-04-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143878974","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Artificial synapse and pain perception behavior based on pectin doped graphene oxide memristor 基于果胶掺杂氧化石墨烯忆阻器的人工突触与痛觉行为

IF 4.2 3区工程技术

Materials Science in Semiconductor Processing Pub Date : 2025-04-27 DOI: 10.1016/j.mssp.2025.109592

Ming Liu , Yanmei Sun , Zekai Zhang

{"title":"Artificial synapse and pain perception behavior based on pectin doped graphene oxide memristor","authors":"Ming Liu , Yanmei Sun , Zekai Zhang","doi":"10.1016/j.mssp.2025.109592","DOIUrl":"10.1016/j.mssp.2025.109592","url":null,"abstract":"<div><div>In recent years, memristors with synaptic bionic behavior have received great attention, and they have a wide range of applications in the field of brain-like nerve and brain-like implant. The pain receptor is a kind of nervous system that senses pain. It is a special sensory receptor that can detect and respond to harmful stimuli. In this work, Al/pectin-GO/ITO memristor with good retention, good durability and switching ratio up to 10<sup>4</sup> was prepared by using pectin doped graphene oxide as the dielectric layer. It can simulate various synaptic functions and successfully realize the basic characteristics of pain receptors. Synaptic learning behaviors include short-term plasticity, long-term plasticity, impulse amplitude-dependent plasticity, impulse quantity dependent plasticity, learn-forget-relearning, and associative memory. In addition, the key characteristics of the pain receptors were validated by applying an electrical pulse signal to the device, including threshold, non-adaptation, relaxation, and sensitization. This device with both neurobionics and pain sensing behavior has potential application value in the development of neurorobotics, electronic neuro-skin and other fields.</div></div>","PeriodicalId":18240,"journal":{"name":"Materials Science in Semiconductor Processing","volume":"195 ","pages":"Article 109592"},"PeriodicalIF":4.2,"publicationDate":"2025-04-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143877159","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0