Tunable hafnium-doped InZnO thin film transistors via plasma-enhanced atomic layer deposition

IF 4.6 3区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC
Jiong Liu , Sheng Han , Yu Zhang , Jingxuan Wei , Bojia Chen , Runzhou Li , Pei Yan , Jiangquan Kuang , Xinming Wu , Xuefeng Wu , Rongxu Bai , David W. Zhang , Qingqing Sun , Li Ji , Shen Hu
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Abstract

Hafnium-doped InZnO (HIZO) thin film transistors (TFTs) were successfully fabricated via plasma-enhanced atomic layer deposition (PEALD) at low temperature (180 °C) for the first time, omitting the annealing process. Concretely, we adjusted the device performance by modulating the doping concentration of hafnium (Hf) cations and the oxygen vacancy content. The optimal 6.25 % doping content was determined. Based on this optimization, the HIZO TFTs exhibited an excellent field-effect mobility (μFE) of 21.7 cm2/V·s, a low threshold voltage (Vth) of ∼0.1 V, a minimum subthreshold swing (SS) of 69 mV/decade and a fantastic Ion/Ioff of exceeding 108 utilizing the hafnium oxide (HfO2) dielectric, which was one of the state-of-the-art performances among HIZO TFTs reported to date. Meanwhile, an excellent bias stability under both positive and negative bias stress was achieved. The favorable performance can be attributed to the effective suppression of overabundant oxygen vacancies and the passivation of defects at the channel–dielectric interface by Hf doping. The Hall effect measurement and X-ray photoelectron spectroscopy (XPS) further corroborate the ability to inhibit carrier concentration by Hf addition. This study presents a novel strategy for achieving excellent HIZO TFTs, holding promise for the next-generation high-performance display domain.

Abstract Image

通过等离子体增强原子层沉积的可调谐掺铪InZnO薄膜晶体管
采用等离子体增强原子层沉积(PEALD)技术,首次在低温(180℃)下成功制备了掺杂铪的InZnO (HIZO)薄膜晶体管(TFTs),省去了退火工艺。具体来说,我们通过调节掺杂铪离子的浓度和氧空位的含量来调整器件的性能。确定了最佳掺量为6.25%。基于此优化,HIZO tft具有21.7 cm2/V·s的场效应迁移率(μFE)、~ 0.1 V的低阈值电压(Vth)、69 mV/decade的最小亚阈值摆幅(SS)和超过108的离子/离合率(Ion/Ioff),这是迄今为止报道的最先进的HIZO tft之一。同时,在正、负偏置应力下均具有良好的偏置稳定性。这种良好的性能可归因于Hf掺杂有效抑制了过多的氧空位和通道-介质界面缺陷的钝化。霍尔效应测量和x射线光电子能谱(XPS)进一步证实了Hf加入抑制载流子浓度的能力。本研究提出了一种实现优秀的HIZO tft的新策略,为下一代高性能显示领域带来了希望。
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来源期刊
Materials Science in Semiconductor Processing
Materials Science in Semiconductor Processing 工程技术-材料科学:综合
CiteScore
8.00
自引率
4.90%
发文量
780
审稿时长
42 days
期刊介绍: Materials Science in Semiconductor Processing provides a unique forum for the discussion of novel processing, applications and theoretical studies of functional materials and devices for (opto)electronics, sensors, detectors, biotechnology and green energy. Each issue will aim to provide a snapshot of current insights, new achievements, breakthroughs and future trends in such diverse fields as microelectronics, energy conversion and storage, communications, biotechnology, (photo)catalysis, nano- and thin-film technology, hybrid and composite materials, chemical processing, vapor-phase deposition, device fabrication, and modelling, which are the backbone of advanced semiconductor processing and applications. Coverage will include: advanced lithography for submicron devices; etching and related topics; ion implantation; damage evolution and related issues; plasma and thermal CVD; rapid thermal processing; advanced metallization and interconnect schemes; thin dielectric layers, oxidation; sol-gel processing; chemical bath and (electro)chemical deposition; compound semiconductor processing; new non-oxide materials and their applications; (macro)molecular and hybrid materials; molecular dynamics, ab-initio methods, Monte Carlo, etc.; new materials and processes for discrete and integrated circuits; magnetic materials and spintronics; heterostructures and quantum devices; engineering of the electrical and optical properties of semiconductors; crystal growth mechanisms; reliability, defect density, intrinsic impurities and defects.
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