Enhancing the stability of perovskite solar cells through surface ring-opening reactions

IF 4.6 3区工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC

Materials Science in Semiconductor Processing Pub Date : 2025-09-13 DOI:10.1016/j.mssp.2025.110054

Shengcong Wu , Qiu Xiong , Shui-Yang Lien , Peng Gao

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引用次数: 0

Abstract

Stability remains a crucial factor limiting the development of perovskite solar cells (PSCs). Traditional surface passivation layers are typically connected to the perovskite layer through hydrogen bonds. These hydrogen bonds are prone to decomposition under outdoor conditions, failing to protect the perovskite layer and potentially damaging the perovskite structure. These issues severely limit the performance and commercialization of PSCs. To address this challenge, this study utilizes the benzyl glycidyl ether (BGE) molecules to form covalent bonds with the ammonium organic cations on the perovskite surface. The covalent bonds strategy exhibits superior stability, while the reaction also generates hydroxyl and secondary amine groups that passivate defects and suppress ion migration inside the perovskite. This strategy significantly enhances the stability parameters of the PSCs, retaining 62 % of the initial efficiency after 1000 h of continuous illumination, which is higher than that of the control (20 %). Moreover, after being stored in an extreme environment of 75 °C for 200 h, these devices still maintained 80 % of initial efficiency, while the control devices were only 60 %.

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通过表面开环反应提高钙钛矿太阳能电池的稳定性

稳定性仍然是限制钙钛矿太阳能电池（PSCs）发展的关键因素。传统的表面钝化层通常通过氢键与钙钛矿层连接。这些氢键在室外条件下容易分解，无法保护钙钛矿层，并可能破坏钙钛矿结构。这些问题严重限制了psc的性能和商业化。为了解决这一挑战，本研究利用苄基缩水甘油醚（BGE）分子与钙钛矿表面的铵态有机阳离子形成共价键。共价键策略表现出优异的稳定性，同时该反应还产生羟基和仲胺，这些羟基和仲胺可以钝化钙钛矿内部的缺陷并抑制离子迁移。该策略显著提高了PSCs的稳定性参数，在连续照明1000小时后保持62%的初始效率，高于对照组（20%）。此外，在75°C的极端环境中储存200 h后，这些装置仍然保持80%的初始效率，而控制装置仅为60%。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

Materials Science in Semiconductor Processing 工程技术-材料科学：综合

CiteScore

8.00

自引率

4.90%

发文量

780

审稿时长

42 days

期刊介绍： Materials Science in Semiconductor Processing provides a unique forum for the discussion of novel processing, applications and theoretical studies of functional materials and devices for (opto)electronics, sensors, detectors, biotechnology and green energy. Each issue will aim to provide a snapshot of current insights, new achievements, breakthroughs and future trends in such diverse fields as microelectronics, energy conversion and storage, communications, biotechnology, (photo)catalysis, nano- and thin-film technology, hybrid and composite materials, chemical processing, vapor-phase deposition, device fabrication, and modelling, which are the backbone of advanced semiconductor processing and applications. Coverage will include: advanced lithography for submicron devices; etching and related topics; ion implantation; damage evolution and related issues; plasma and thermal CVD; rapid thermal processing; advanced metallization and interconnect schemes; thin dielectric layers, oxidation; sol-gel processing; chemical bath and (electro)chemical deposition; compound semiconductor processing; new non-oxide materials and their applications; (macro)molecular and hybrid materials; molecular dynamics, ab-initio methods, Monte Carlo, etc.; new materials and processes for discrete and integrated circuits; magnetic materials and spintronics; heterostructures and quantum devices; engineering of the electrical and optical properties of semiconductors; crystal growth mechanisms; reliability, defect density, intrinsic impurities and defects.