非易失性、高开/关比、耐用的基于ScAlN的人工突触忆阻器器件

IF 4.6 3区工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC

Materials Science in Semiconductor Processing Pub Date : 2025-09-12 DOI:10.1016/j.mssp.2025.110025

Cong Han , Haiming Qin , Rui Hu , Weijing Shao , Hanbing Fang , Hao Zhang , Xinpeng Wang , Yu Wang , Yi Liu , Yi Tong

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引用次数: 0

摘要

由于铁电性的发现，掺钪铝氮引起了广泛的关注。共存的电阻特性在这种材料中也起着重要的作用。然而，关于忆阻器的研究很少，特别是在神经形态计算领域。本研究以掺钪AlN合金材料为绝缘层，构建了mim结构的忆阻器。介绍了Cu/Sc0.2Al0.8N/Pt/Ti器件在神经形态系统中的记忆特性。该器件具有优异的电阻开关性能，其特点是I-V周期稳定在200以上，开/关比超过106%，保持时间超过10,000 s，器件均匀性好。通过调节顺应电流，该器件表现出可调节渐进开关和多层电阻状态的突出特性。通过物理模型和温度相关的I-V曲线分析，将开关和导通机制归因于缺陷辅助导通。此外，突触活动，包括长期增强（LTP）、长期抑制（LTD）和成对脉冲促进（PPF），被有效复制。研究了MNIST手写数字图像识别任务中电位和抑制的线性关系。

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Non-volatile, high on/off ratio, durable memristor devices based on ScAlN for artificial synapse

Sc-doped AlN has attracted a large amount of attention due to the discovery of ferroelectricity. The co-existing resistive characteristic also plays an important role in this material. However, few studies on memristors focus on it, especially in the field of neuromorphic computing. This study presents the construction of MIM-structured memristors utilizing Sc-doped AlN alloy material as the insulating layer. The memory attributes of the Cu/Sc_0.2Al_0.8N/Pt/Ti device are presented for neuromorphic systems. This device demonstrates excellent resistive switching performance characterized by consistent I-V cycles above 200, a substantial ON/OFF ratio surpassing 10⁶ %, prolonged retention time exceeding 10,000 s, and favorable device uniformity. By adjusting the compliance current, this device demonstrates outstanding attributes of regulated progressive switching and multi-tiered resistance states. The switching and conduction mechanism is ascribed to defect-assisted conduction by using physical models and the analysis of temperature-dependent I-V curves. Furthermore, synaptic activities, including long-term potentiation (LTP), long-term depression (LTD), and paired-pulse facilitation (PPF), are effectively replicated. The MNIST handwritten digits image recognition task was examined concerning the linearity of potential and depression.

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来源期刊

Materials Science in Semiconductor Processing 工程技术-材料科学：综合

CiteScore

8.00

自引率

4.90%

发文量

780

审稿时长

42 days

期刊介绍： Materials Science in Semiconductor Processing provides a unique forum for the discussion of novel processing, applications and theoretical studies of functional materials and devices for (opto)electronics, sensors, detectors, biotechnology and green energy. Each issue will aim to provide a snapshot of current insights, new achievements, breakthroughs and future trends in such diverse fields as microelectronics, energy conversion and storage, communications, biotechnology, (photo)catalysis, nano- and thin-film technology, hybrid and composite materials, chemical processing, vapor-phase deposition, device fabrication, and modelling, which are the backbone of advanced semiconductor processing and applications. Coverage will include: advanced lithography for submicron devices; etching and related topics; ion implantation; damage evolution and related issues; plasma and thermal CVD; rapid thermal processing; advanced metallization and interconnect schemes; thin dielectric layers, oxidation; sol-gel processing; chemical bath and (electro)chemical deposition; compound semiconductor processing; new non-oxide materials and their applications; (macro)molecular and hybrid materials; molecular dynamics, ab-initio methods, Monte Carlo, etc.; new materials and processes for discrete and integrated circuits; magnetic materials and spintronics; heterostructures and quantum devices; engineering of the electrical and optical properties of semiconductors; crystal growth mechanisms; reliability, defect density, intrinsic impurities and defects.