Materials Science in Semiconductor Processing最新文献

{"title":"The impact of silicon doping on the photocatalytic properties of t-graphene","authors":"K. Ribag ,&nbsp;M. Houmad ,&nbsp;A. Toumlilin ,&nbsp;M. El Moudni ,&nbsp;A. El Kenz ,&nbsp;A. Benyoussef","doi":"10.1016/j.mssp.2025.109434","DOIUrl":"10.1016/j.mssp.2025.109434","url":null,"abstract":"<div><div>The study explores the effects of silicon doping on the optical, electrical, and photocatalytic characteristics of monolayer t-graphene. We used two approximations: the modified Tran-Blaha Becke-Johnson (TB-mBJ) exchange potential and the Tran and Blaha generalized gradient approach (TB-GGA) by the full-potential linearized augmented plane wave method. These approximations are implemented in the Wien2k code. The results demonstrate that silicon doping dramatically modifies and enhances t-graphene's band gap and electrical conductivity. The band gap widens when silicon concentration rises, enhancing silicon's potential application in photocatalytic applications. More precisely, by increasing the band gap, a higher silicon concentration increases the range of applications for silicon in photocatalytic. The conduction band minimum (CBM) of Si-doped t-graphene reduces by 0.29 eV, 0.58 eV, and 1.01 eV at 37.5 %, 25 %, and 12.5 % doping levels, respectively, in comparison to 50 % Si-doped t-graphene. The findings show that silicon doping significantly changes the band gap and increases the electrical conductivity of t-graphene. More specifically, a higher concentration of silicon results in a wider band gap and more uses for photocatalytic applications.</div></div>","PeriodicalId":18240,"journal":{"name":"Materials Science in Semiconductor Processing","volume":"192 ","pages":"Article 109434"},"PeriodicalIF":4.2,"publicationDate":"2025-03-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143529645","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Pumping and shrinking deformation of TSV-Cu under thermal cycling loads: A cross-scale analysis approach","authors":"Zhengwei Fan ,&nbsp;Kaihong Hou ,&nbsp;Yonggui Chen ,&nbsp;Shufeng Zhang ,&nbsp;Yashun Wang ,&nbsp;Xun Chen","doi":"10.1016/j.mssp.2025.109430","DOIUrl":"10.1016/j.mssp.2025.109430","url":null,"abstract":"<div><div>Three-dimensional (3D) integrated packaging represents a novel generation of semiconductor packaging technology, with through-silicon via (TSV) being the most critical structure. However, its failure mechanism and reliability evaluation issues remain inadequately addressed. The thermal mismatch at the TSV microstructure interfaces generates substantial thermal stresses under thermal cycling loads, leading to pump and shrinkage deformation in the filled copper and adversely impacting the structural reliability and performance. This study presents a cross-scale analysis method that integrates the principles of crystal plasticity (CP) with the finite element method (FEM) while taking thermal expansion effects into account. Utilizing this method, the pump and shrinkage phenomena of seven common textures of TSV electroplated copper (TSV-Cu) crystals under thermal cycling load were compared, and the distribution of equivalent stress, elastic strain, and plastic strain were analyzed. Subsequently, the effects of TSV-Cu grain number, topological morphology, random orientation, orientation dispersion, grain size, and orientation mismatch at the top of TSV on deformation were investigated. Furthermore, the residual stress and deformation associated with TSV pumping and shrinking under thermal cycling were analyzed. The conclusions drawn from the cross-scale analysis method proposed in this study are consistent with the experimental observations and analyses reported in the relevant literature, thereby validating the method's accuracy. The research findings indicate that when the copper filler exhibits a Cube texture, the stress, strain, and deformation are relatively minimal. In the absence of a preferred orientation in the copper filler, the dispersion of copper expansion and contraction deformation is dependent on the grain size, and the deformation follows a Weibull competitive distribution. The topological morphology of the grains induces non-uniform deformation in the structure, resulting in localized and annular deformation patterns. The grain size and orientation mismatch at the top of the TSV-Cu significantly influence the pump and shrinkage deformation of copper under thermal cycling conditions. Finally, the study concludes with recommendations for structural process optimization. By linking grain microstructure evolution to macroscopic boundaries and loads through the cross-scale analysis method, this research provides insights into the microscopic-scale pump and shrinkage phenomena of TSV-filled copper under thermal cycling, offering valuable references for TSV structural design, process optimization, failure analysis, and life assessment.</div></div>","PeriodicalId":18240,"journal":{"name":"Materials Science in Semiconductor Processing","volume":"192 ","pages":"Article 109430"},"PeriodicalIF":4.2,"publicationDate":"2025-03-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143534246","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Electrical properties of normally-on hydrogenated Si-terminated diamond field effect transistors","authors":"Yuanchen Ma ,&nbsp;Qi He ,&nbsp;Jinfeng Zhang ,&nbsp;Zihui Zhu ,&nbsp;Zeyang Ren ,&nbsp;Kai Su ,&nbsp;Xinxin Yu ,&nbsp;Qihui Xu ,&nbsp;Jincheng Zhang ,&nbsp;Yue Hao","doi":"10.1016/j.mssp.2025.109426","DOIUrl":"10.1016/j.mssp.2025.109426","url":null,"abstract":"<div><div>Silicon-terminated (C-Si) diamond with high conductivity was prepared by Si sputtering on diamond surface followed by Si etching-away in 1000 °C hydrogen plasma. Then normally-on hydrogenated C-Si diamond metal-oxide-semiconductor field-effect transistor (MOSFET) devices with different gate lengths had been fabricated. The carrier transport characteristics of the device were investigated by the fat gate MOSFET device with a gate length of 50 μm, a constant hole mobility of 49.1 cm²/(Vs) can be maintained over a large carrier concentration range (from 6.7 × 10¹² cm⁻² to 2.2 × 10¹³ cm⁻²) for −8 V ≤ V_GS ≤ −1 V based on the capacitance-voltage (C-V) characteristics and the direct-current (DC) characteristics of the device. A device with a gate length of 3.5-μm shows the threshold voltage (V_TH), maximum drain current (I_Dmax), maximum transconductance (G_m) and on-off ratio of 2.5 V, 140.4 mA/mm, 22.9 mS/mm and 10⁹, respectively. When the temperature increased from room temperature to 150 °C, the device exhibited a reduction in I_Dmax, which may be due to the enhanced carrier scattering and reduced mobility. Normally-on C-Si diamond FET devices provided new possibilities for the fabrication of high-performance diamond microwave power devices.</div></div>","PeriodicalId":18240,"journal":{"name":"Materials Science in Semiconductor Processing","volume":"192 ","pages":"Article 109426"},"PeriodicalIF":4.2,"publicationDate":"2025-03-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143529660","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"White light emission from a ternary dysprosium complex: Energy transfer and ligand-driven modulation","authors":"Vandana Aggarwal ,&nbsp;Devender Singh ,&nbsp;Kapeesha Nehra ,&nbsp;Swati Dalal ,&nbsp;Sonia Redhu ,&nbsp;Parvin Kumar ,&nbsp;Sumit Kumar ,&nbsp;Rajender Singh Malik","doi":"10.1016/j.mssp.2025.109427","DOIUrl":"10.1016/j.mssp.2025.109427","url":null,"abstract":"<div><div>This study explores the preparation and spectral properties of four luminescent dysprosium (III) complexes: [Dy (TTBD)₃L], where L represents different auxiliary ligands, including Phen (D1), Neo (D2), BP (D3) and BC (D4). The successful synthesis of these complexes was confirmed through a combination of CHN analysis, IR spectroscopy and Proton NMR spectroscopy. Optical properties were systematically assessed by UV–visible absorption spectroscopy, photoluminescence (PL) spectroscopy and radiative decay lifetime measurements. CIE coordinates, plotted in the 1931 color space, were used to identify the emissive color of the complexes. Complex D2 emitted white light, D3 showed bluish-white emission, while D1 and D4 exhibited blue luminescence due to a broad, ligand-based emission band. In addition, the thermal stability and electrochemical behavior of the complexes were assessed. This thorough analysis seeks to elucidate the structure-optical properties relationship, focusing on emission modulation for potential applications in white OLEDs and other optoelectronic devices. The study emphasizes the importance of controlling energy transfer interactions between donor and acceptor moieties to tune the emission spectra. We demonstrate that by carefully selecting different sensitizers for the Dy(III) ion, a range of color outputs, including pure white light from a single-phase material, can be achieved, offering promising pathway for advanced display and lighting technologies.</div></div>","PeriodicalId":18240,"journal":{"name":"Materials Science in Semiconductor Processing","volume":"192 ","pages":"Article 109427"},"PeriodicalIF":4.2,"publicationDate":"2025-03-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143520199","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Eu2O3/carbon-nanospheres for enhanced photocatalytic degradation of rhodamine B dye","authors":"Jialong Ma ,&nbsp;Yishuai Jing ,&nbsp;Yuting Li ,&nbsp;Shanbo Cui ,&nbsp;Xin Zhao ,&nbsp;Jiaming Song","doi":"10.1016/j.mssp.2025.109422","DOIUrl":"10.1016/j.mssp.2025.109422","url":null,"abstract":"<div><div>The demand for water pollution control accelerated the development of environment-friendly technologies, e.g., photocatalysis, for resolving the pollution issue efficiently. Wide bandgap rare earth oxide semiconductors are potential photocatalysts with low toxicity for the environment, but the luminescence of rare earth ions and narrow light absorption band restrict their photocatalytic degradation efficiency. In this study, we synthesized a composite structure consisting of Eu₂O₃ nanoparticles (NPs) and carbon-nanospheres (CNSs) by annealing both monomers in argon atmosphere together. The photocatalytic degradation performance of the composites with different mass ratios were investigated by utilizing rhodamine B (RhB) dye as the target organic pollutant. The results show that the combination with CNSs significantly improved the photocatalytic performance of Eu₂O₃, and the composite's highest removal efficiency reached up to 55 % within 60 min, which is competitive to those for other rare earth oxides. The improved photocatalytic degradation capacity for the composite structure was attributed to the luminescence suppression of Eu³⁺ and the increased visible-light absorption by CNSs. Our research sheds light on the possible routes for enhancing the photocatalytic degradation capability of rare earth oxides in the environment pollution abatement.</div></div>","PeriodicalId":18240,"journal":{"name":"Materials Science in Semiconductor Processing","volume":"192 ","pages":"Article 109422"},"PeriodicalIF":4.2,"publicationDate":"2025-03-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143520200","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Enhanced SnO2 FETs via selective area fluorine doping","authors":"Seonchang Kim,&nbsp;Huiseung Kim,&nbsp;Suhyeon Park,&nbsp;Dawon Lee,&nbsp;Roy Byung Kyu Chung","doi":"10.1016/j.mssp.2025.109421","DOIUrl":"10.1016/j.mssp.2025.109421","url":null,"abstract":"<div><div>In this study, a selective fluorine (F) doping process was developed to enhance the performance of field-effect transistors (FETs) with SnO₂ channels deposited by thermal atomic layer deposition. The fluorination process was applied selectively to the source (S) and drain (D) regions of the SnO₂ FETs. Fluorination of the S/D regions before the annealing step of the SnO₂ channel resulted in a significant improvement in specific contact resistivity (ρ_c), reducing it from 1.1 × 10⁻² to 3.1 × 10⁻³ Ω cm² - more than a threefold enhancement compared to SnO₂ FETs without S/D fluorination. However, in this case, the SnO₂ channel could not be modulated, likely due to the diffusion of F ions into the channel during the annealing process. When fluorination was applied to the annealed SnO₂ channel, an on/off ratio of 2.4 × 10⁸ was achieved. However, ρ_c was 9.1 × 10⁻³ Ω cm², showing only a 15 % improvement compared to untreated SnO₂ FETs. To address this limitation, a two-step approach was developed for SnO₂ FETs, in which F-doped S/D regions were formed prior to depositing the SnO₂ channel. This approach yielded stable channel modulation with an on/off ratio &gt; 10⁸, along with a significant enhancement in field-effect mobility, increasing from 10.4 to 25.3 cm²/V·s. Furthermore, the entire process was conducted at 400 °C or below, demonstrating its potential for enabling high-performance oxide transistors compatible with low temperature processes.</div></div>","PeriodicalId":18240,"journal":{"name":"Materials Science in Semiconductor Processing","volume":"192 ","pages":"Article 109421"},"PeriodicalIF":4.2,"publicationDate":"2025-03-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143520201","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"First-principles study of the structural and electronic properties of N-doped Zr3C2 MXenes","authors":"Bilal Ahmed ,&nbsp;Muhammad Bilal Tahir ,&nbsp;Akmal Ali ,&nbsp;Muhammad Sagir ,&nbsp;Abdelmohsen A. Nassani","doi":"10.1016/j.mssp.2025.109417","DOIUrl":"10.1016/j.mssp.2025.109417","url":null,"abstract":"<div><div>In the realm of advanced materials, two-dimensional (2D) compounds like MXenes, a novel class of 2D transition metal carbides and nitrides, have gained significant interest for their unique structural, electronic, and mechanical properties. This study employs Density Functional Theory (DFT) to investigate the structural and electronic properties of nitrogen-doped Zr₃C₂ MXenes. The doped structures exhibit enhanced stability with minor modifications in lattice parameters, as confirmed by cohesive and formation energy analyses. Band structure and density of states (DOS) reveal that pure Zr₃C₃ MXene is metallic, and nitrogen doping enhances the density of states near the Fermi level, suggesting improved electronic interactions and potential applications in catalysis. Optical properties show slight variations upon doping without significant changes to the material's fundamental behavior. These findings suggest nitrogen-doped Zr₃C₂ MXenes are promising candidates for electrocatalytic hydrogen evolution reactions (HER) and other advanced applications.</div></div>","PeriodicalId":18240,"journal":{"name":"Materials Science in Semiconductor Processing","volume":"192 ","pages":"Article 109417"},"PeriodicalIF":4.2,"publicationDate":"2025-03-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143520202","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Fabrication of Novel ZnO@Mn3C photocatalyst for organic pollutants degradation via peroxymonosulfate activation","authors":"Hamza Khaliq ,&nbsp;Muhammad Adnan ,&nbsp;Muhammad Usman ,&nbsp;Faiza Shahzad ,&nbsp;Ahmed Nadeem ,&nbsp;Gamal A. Shazly ,&nbsp;Ghulam Abbas Ashraf ,&nbsp;Zhenhua Zhao","doi":"10.1016/j.mssp.2025.109425","DOIUrl":"10.1016/j.mssp.2025.109425","url":null,"abstract":"<div><div>Organic pollutants are significant threat to water systems, therefore the present study design to produce innovative semiconductor photocatalyst for organic pollutants removal. XRD analysis confirmed the existence of crystalline phases of ZnO and Mn₃C. Additionally, UV–Vis analysis indicated improved light absorption, with a bandgap of 2.18 eV for the ZnO@Mn₃C nanocomposite. TEM analysis revealed a uniform distribution of Zn particles on Mn₃C, while BET measurements indicated that ZnO@Mn₃C exhibited a higher surface area (13.12 m²/g) than Mn₃C (2.262 m²/g), thereby improving porosity and increasing active sites for photocatalysis. XPS verified the successful integration of ZnO with Mn₃C, resulting in the formation of a heterojunction. The fabrication of ZnO@Mn₃C nanocomposite has proved to be a successful approach to enhance durability and photocatalytic efficiency of Mn₃C. Under visible light, the ZnO@Mn₃C nanocomposite showed improved effectiveness in activating peroxymonosulfate (PMS) and degrading RhB as compared to pure Mn₃C. The nanocomposite has the ability to enhance the e⁻ and h⁺ pairs separation and has exceptional photocatalytic activity for the degradation of RhB. The higher photocatalytic activity of ZnO@Mn₃C is attributed to its unique structure, which includes of microscopic pores on the surface that confine PMS to the interface. The nanocomposite has a significantly improved activity, demonstrating the complementary effects of Mn₃C and Zn ions. The degradation of RhB was predominantly attributed to the participation of holes and important reactive radicals such as e⁻, ^•O₂⁻, ^•OH/SO₄^•−, ^•OH, and h⁺. The ZnO@Mn₃C photocatalyst degrades organic pollutants (70–95 %) efficiently, showing promise for environmental remediation. Consequently, this study presents a strategy for developing novel photocatalytic material with remarkable photocatalytic efficiency in degrading organic pollutants from water systems.</div></div>","PeriodicalId":18240,"journal":{"name":"Materials Science in Semiconductor Processing","volume":"192 ","pages":"Article 109425"},"PeriodicalIF":4.2,"publicationDate":"2025-03-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143519849","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Transparent ZnO/CuI nanoparticle heterojunction for self-powered UV detection: Fast response and high Voc with CuO interfacial layer","authors":"Sreelakshmi Madhavanunni Rekha,&nbsp;S. Venkataprasad Bhat","doi":"10.1016/j.mssp.2025.109418","DOIUrl":"10.1016/j.mssp.2025.109418","url":null,"abstract":"<div><div>The allure of cost-effectiveness, scalability, and flexibility makes solution-processed transparent thin films appealing for applications like smart windows, displays, portable electronics, and automotive systems. The present study investigates the development of a transparent ZnO/CuI heterojunction for self-powered UV photodetection with all nanoparticle layers made using a simple, non-toxic solution-processed method. Although the choice of all nanoparticle layers makes the device much simpler and scalable, the prime challenges such as the high potential barrier for carrier transport, and recombination-tunneling paths due to interface defects undermine its functionality. To mitigate these issues and to enhance the charge transport, CuO is introduced as a novel interfacial layer carefully chosen for the energy band alignment within the heterojunction. This significantly improves the responsivity to 20.83 mA/W and detectivity to 1.61 × 10¹², in the self-powered mode with a Voc of 41 mV under 5 mW/cm² UV illumination (365 nm). Interestingly, the device exhibits a faster response, with the rise and decay time of 0.025 s and 0.106 s respectively, surpassing other solution processed ZnO/CuI heterojunction devices reported. The photodetector demonstrates efficient performance under low-intensity UV illumination (∼0.056 mW/cm²), as confirmed by intensity-dependent studies. This presents a low-cost scalable approach for energy efficient weak light UV photodetectors with transparent heterojunction films potentially useful in future smart electronics and window applications.</div></div>","PeriodicalId":18240,"journal":{"name":"Materials Science in Semiconductor Processing","volume":"192 ","pages":"Article 109418"},"PeriodicalIF":4.2,"publicationDate":"2025-03-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143526600","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Study on effect of impurity concentration and thermal stress on vacancy-oxygen complexes in n-type G12 single crystal silicon by Czochralski method","authors":"Qitao Zhang ,&nbsp;Ai Wang ,&nbsp;Tai Li ,&nbsp;Peilin He ,&nbsp;Jun Xiao ,&nbsp;Junxian Chai ,&nbsp;Guoqiang Lv ,&nbsp;Xingwei Yang","doi":"10.1016/j.mssp.2025.109419","DOIUrl":"10.1016/j.mssp.2025.109419","url":null,"abstract":"<div><div>During the growth process of Czochralski single crystal silicon, supersaturated interstitial oxygen atoms aggregate and precipitate to form intrinsic oxygen precipitates. These oxygen precipitates have a significant impact on the electrical properties and yield of silicon wafers. The purpose of the current work is to investigate the heterogeneous nucleation process of oxygen precipitates through VO_x (x = 1,2) complexes during the crystal growth. In the current work, a combined approach of numerical simulation and experimentation was adopted for in-depth exploration of the effects of stress, phosphorus-doped concentration, and interstitial oxygen concentration on VO_x (x = 1, 2) complexes. Moreover, the temperature characteristics and distribution patterns of VO_x complexes during the growth process of single crystal silicon were also thoroughly analyzed. The result indicates that the concentration of VO_x complexes is higher at the center and lower part of the edge in the radial direction. Stress can significantly increase the concentration of VO_x complexes. When the phosphorus-doped concentration and interstitial oxygen concentration were both gradually elevated from 10¹⁶ cm⁻³ to 10¹⁹ cm⁻³, the concentration of VO_x complexes tended to increase accordingly, and the upward trend was particularly notable when the concentration reaches 10¹⁹ cm⁻³. Except for the doping concentration of 10¹⁹ cm⁻³, the doping concentration of phosphorus has a greater effect on the VO_x complexes than that of oxygen. These research findings hold significant guiding significance for understanding and precisely controlling the internal gettering ability of oxygen precipitates, laying foundation for the growth of high-quality single crystal silicon.</div></div>","PeriodicalId":18240,"journal":{"name":"Materials Science in Semiconductor Processing","volume":"192 ","pages":"Article 109419"},"PeriodicalIF":4.2,"publicationDate":"2025-03-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143520203","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}