Materials Science in Semiconductor Processing最新文献

{"title":"A high-sensitivity terahertz SPR biosensor with machine learning optimization for colorectal cancer detection","authors":"Jacob Wekalao ,&nbsp;Ahmed Mehaney ,&nbsp;May Bin-Jumah ,&nbsp;Nassir Saad Alarifi ,&nbsp;Mostafa R. Abukhadra ,&nbsp;Hussein A. Elsayed ,&nbsp;Amuthakkannan Rajakannu ,&nbsp;K. Vijayalakshmi","doi":"10.1016/j.mssp.2025.110064","DOIUrl":"10.1016/j.mssp.2025.110064","url":null,"abstract":"<div><div>This study presents a terahertz-based surface plasmon resonance (SPR) sensor developed for colorectal cancer detection. The device employs a distinctive multi-resonator design that integrates gold, silver, and graphene. Structurally, the sensor comprises an elliptical ring resonator coated with silver, surrounded by a gold-coated circular ring on a silicon dioxide substrate, while a graphene layer is incorporated to enhance sensing performance. Performance analysis was conducted using COMSOL Multiphysics simulations under varying conditions, including graphene chemical potential, incident angles, and resonator dimensions. The proposed sensor demonstrated a maximum sensitivity of 1100 GHz/RIU across a refractive index range of 1.329–1.348 RIU, achieving an optimal figure of merit of 17.460 RIU⁻¹ at 0.719 THz. Additionally, a Random Forest Regression model was used to optimize sensor parameters, achieving up to 100 % accuracy in predicting sensor responses. The device also demonstrated potential as a 2-bit binary encoder, highlighting its versatility for both biosensing and data encoding applications.</div></div>","PeriodicalId":18240,"journal":{"name":"Materials Science in Semiconductor Processing","volume":"201 ","pages":"Article 110064"},"PeriodicalIF":4.6,"publicationDate":"2025-09-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145106539","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Fe3O4@PEG/Ag nanocomposite with improved HER activity for Raman and upconversion spectroscopy-based dual-mode enhancer","authors":"Abhishek Kumar Soni,&nbsp;Najeena K S,&nbsp;Kirti","doi":"10.1016/j.mssp.2025.110069","DOIUrl":"10.1016/j.mssp.2025.110069","url":null,"abstract":"<div><div>Raman and upconversion spectroscopy signals are inherently weak due to scattering and nonlinear optical effects. To enhance Raman and upconversion spectroscopy signals, silver (Ag) incorporated nanocomposites are currently in demand due to their better synergistic enhancement strategies through surface plasmon resonance (SPR). Fe₃O₄@PEG/Ag nanocomposite has been synthesized and characterized by using X-ray diffraction (XRD), Fourier Transform Infrared Spectroscopy (FTIR), UV–visible, Field Emission Scanning Electron Microscopy (FESEM), Energy dispersive X-ray spectroscopy (EDS), Zeta potential, Fluorescence microscopy, and Raman spectroscopy. Fe₃O₄@PEG/Ag nanocomposite-based substrate shows dual-mode Raman and upconversion enhancer capability by probing RhB and Er₂O₃, respectively. Raman enhancer study has been done by monitoring the RhB characteristic peak at ∼1660 cm⁻¹ and explained on the basis of surface-enhanced Raman scattering (SERS) under a 532 nm green laser irradiation. Whereas, in the upconversion emission study, an improved Er³⁺ ion transition is detected under 980 nm NIR laser diode excitation via multiphoton absorption. Interestingly, amplification of the signal intensity has been achieved, as SERS with low fluorescence background under green laser excitation and improved upconversion arise from the nonlinear optical effects due to the interaction of 980 nm NIR laser photons with the surface plasmon resonance of Ag ions available in the Fe₃O₄@PEG/Ag nanocomposite. Improved HER activity of Fe₃O₄@PEG/Ag with a lower overpotential value (230 mV) as compared to Fe₃O₄ has been obtained by electrocatalytic performance. Experimental studies carried out in this work show that the synthesized Fe₃O₄@PEG/Ag nanocomposite with improved HER activity may be suitable for next-generation Raman and upconversion spectroscopy-based dual-mode enhancer.</div></div>","PeriodicalId":18240,"journal":{"name":"Materials Science in Semiconductor Processing","volume":"201 ","pages":"Article 110069"},"PeriodicalIF":4.6,"publicationDate":"2025-09-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145107129","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Study on substitutional doped GaSe monolayers using hybrid functional: Electronic, optoelectronic, and photocatalytic applications","authors":"Mohamed M. Fadlallah ,&nbsp;Safwat Abdel-Azeim","doi":"10.1016/j.mssp.2025.110068","DOIUrl":"10.1016/j.mssp.2025.110068","url":null,"abstract":"<div><div>GaSe monolayer suffers in electronic and photocatalytic applications due to its large bandgap (3.50 eV). In this study, we employed the hybrid density functional, the Heyd-Scuseria-Ernzerhof hybrid (HSE), to explore the effect of substitutional metal single doping (M = Sc, Ti, V, Cr, Mn, Fe, Co, Ni, Cu, Zn, Ge, As, In, Sn, Sb) at the Ga-site on the structural stability, electronic, magnetic, optical, and photocatalytic properties. Our findings indicate that the bond lengths M-Ga/Se increase as the atomic radius of the dopant increases. Most of the doped structures are found to be thermodynamically stable. The introduction of metal and non-metal dopants significantly alters the magnetic properties of GaSe nanosheets, with dopings of Ti, V, Cr, Mn, Fe, Ni, and Co, as well as Zn, resulting in diluted magnetic semiconductors. In contrast, dopings with Sc, Cu, As, In, and Sb maintained semiconductor characteristics. The As- and Sb-doping resulted in the narrowest bandgap of 2.1 eV, while Ge- and Sn-doped GaSe monolayers revealed promise for two-dimensional spintronic applications. Although most dopants enhanced visible-light absorption, many proved unsuitable for photocatalysis due to the created mid-gap states and unfavorable valence band edges. The study showed that V-doped GaSe monolayer is a promising two-dimensional material for photocatalytic water-splitting and CO₂ reduction under visible light, making it a potential material for clean fuel production.</div></div>","PeriodicalId":18240,"journal":{"name":"Materials Science in Semiconductor Processing","volume":"201 ","pages":"Article 110068"},"PeriodicalIF":4.6,"publicationDate":"2025-09-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145106540","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Deep-reactive-ion-etching in X-ray grating fabrication: a review","authors":"Zhitian Shi ,&nbsp;Konstantins Jefimovs ,&nbsp;Joan Vila-Comamala ,&nbsp;Alexandre Pereira ,&nbsp;Daniel Josell ,&nbsp;Marco Stampanoni ,&nbsp;Lucia Romano","doi":"10.1016/j.mssp.2025.110041","DOIUrl":"10.1016/j.mssp.2025.110041","url":null,"abstract":"<div><div>The development of grating fabrication shares its journey with the development of X-ray phase contrast imaging. Indeed, the fabrication of gratings with features of sufficiently high aspect ratio is one of the bottlenecks preventing the widespread application of phase contrast imaging in X-ray diagnostics, material science and security. The silicon platform that underlies modern manufacture of integrated circuits, with its well-established technologies for lithography, etching and metal deposition, has the potential to provide high yields and volumes for industrial fabrication of both phase and absorption gratings used in a grating-based X-ray imaging systems. This review article introduces recent developments in the fabrication of high aspect ratio X-ray gratings using ubiquitous clean-room manufacturing tools, focusing on deep reactive ion etching processes. It summarizes the most challenging issues for fabricating features with aspect ratios reaching 70:1, proposing approaches to overcome processing problems and improve product quality.</div></div>","PeriodicalId":18240,"journal":{"name":"Materials Science in Semiconductor Processing","volume":"201 ","pages":"Article 110041"},"PeriodicalIF":4.6,"publicationDate":"2025-09-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145060290","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Molecular engineering of acetylenic dithieno[3,2-b:2′,3′-d]thiophene derivatives for organic field-effect transistors","authors":"Junyeop Yoo ,&nbsp;EunJeong Lee ,&nbsp;Sejoong Kim ,&nbsp;Ming-Chou Chen ,&nbsp;Choongik Kim ,&nbsp;SungYong Seo","doi":"10.1016/j.mssp.2025.110051","DOIUrl":"10.1016/j.mssp.2025.110051","url":null,"abstract":"<div><div>In this study, we report a series of dithieno[3,2-b:2′,3′-d]thiophene (DTT)-based small molecules featuring five different end-capping substituents: 2-octyl-6-(5-(phenylethynyl)thiophen-2-yl)dithieno[3,2-b:2′,3′-d]thiophene (compound <strong>1</strong>), triisopropyl((5-(6-octyldithieno[3,2-b:2′,3′-d]thiophen-2-yl)thiophen-2-yl)ethynyl)silane (compound <strong>2</strong>), 2-octyl-6-(5-(thiophen-2-ylethynyl)thiophen-2-yl)dithieno[3,2-b:2′,3′-d]thiophene (compound <strong>3</strong>), 2-octyl-6-(5-((5-octylthiophen-2-yl)ethynyl)thiophen-2-yl)dithieno[3,2-b:2′,3′-d]thiophene (compound <strong>4</strong>), and 2-(5-((5-(2-ethylhexyl)thiophen-2-yl)ethynyl)thiophen-2-yl)-6-octyldithieno[3,2-b:2′,3′-d]thiophene (compound <strong>5</strong>). To enhance solubility, one-sided linear octyl chain was introduced on the DTT core, while extended π-conjugation was achieved through the incorporation of additional thiophene rings and acetylenic linkages to promote effective charge transport. The thermal stability, optical absorption, and redox characteristics of the synthesized molecules were studied via thermogravimetric analysis (TGA), differential scanning calorimetry (DSC), UV–vis spectroscopy, and cyclic voltammetry (CV). The DTT thin films formed via solution shearing were characterized by atomic force microscopy (AFM) and X-ray diffraction (XRD) to examine surface topology and molecular arrangement. When implemented as active materials in organic field-effect transistors (OFETs), all five compounds displayed p-type semiconducting behavior. Among them, compound <strong>3</strong>, which possesses a thienyl terminal group without bulky alkyl side chains, exhibited the most favorable charge transport characteristics under ambient atmosphere, attaining a carrier mobility of 0.036 cm² V⁻¹ s⁻¹ and an on/off current ratio above 10⁶. These observations underscore the importance of rational side-chain modification in optimizing molecular assembly and film crystallinity to enhance OFET performance.</div></div>","PeriodicalId":18240,"journal":{"name":"Materials Science in Semiconductor Processing","volume":"201 ","pages":"Article 110051"},"PeriodicalIF":4.6,"publicationDate":"2025-09-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145060295","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Boosted photoelectrochemical water splitting activity by construction of a novel FeVO4/AgVO3 p-n heterostructure","authors":"Hong Tian ,&nbsp;Yumin Li ,&nbsp;Qingping Dai ,&nbsp;Shunlang Wei ,&nbsp;Bing Lv ,&nbsp;Jun Wei ,&nbsp;Yupei Qiao","doi":"10.1016/j.mssp.2025.110023","DOIUrl":"10.1016/j.mssp.2025.110023","url":null,"abstract":"<div><div>FeVO₄ is recognized as a potential photoelectrode material on account of its relatively narrow bandgap and suitable conduction and valence band positions. However, its photoelectrochemical water splitting performance remains unsatisfactory owing to rapid carrier recombination and poor charge transport capabilities. Herein, a novel p-n FeVO₄/AgVO₃ heterostructure photoanode was developed by depositing p-type AgVO₃ nanowires onto n-type FeVO₄ nanoporous structures, boosting the PEC properties of the base material. The incorporated AgVO₃ nanostructures enhance light absorption in the visible spectrum, facilitate effective electron-hole separation through optimized interfacial charge transport pathways, and simultaneously extend the carrier lifetime. The built-in electric field in the p-n heterostructure promotes more effective separation and directional motion of photoinduced charge carriers. As a result, the transient photocurrent density of the FeVO₄/AgVO₃ heterojunction photoanode reaches 0.22 mA cm⁻², which is 3.35 times that of bare FeVO₄ (0.06 mA cm⁻²). Notably, the incorporation of AgVO₃ nanowires significantly improves the photostability of the FeVO₄ photoanode. This work provides a feasible strategy from the perspective of interface engineering for designing high-performance FeVO₄-based photoelectrodes to enhance photoconversion efficiency.</div></div>","PeriodicalId":18240,"journal":{"name":"Materials Science in Semiconductor Processing","volume":"201 ","pages":"Article 110023"},"PeriodicalIF":4.6,"publicationDate":"2025-09-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145060291","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Thermal-moisture interaction effects on delamination reliability of advanced fan-out packages","authors":"Meng-Kai Shih ,&nbsp;Yi-Hao Chen ,&nbsp;Bo-Rui Ding ,&nbsp;Chin-Ju Hsieh ,&nbsp;I-Hung Lin ,&nbsp;Tom Ni","doi":"10.1016/j.mssp.2025.110037","DOIUrl":"10.1016/j.mssp.2025.110037","url":null,"abstract":"<div><div>—Fan-out (FO) packages are critical for achieving high I/O density and miniaturization in advanced electronic products. However, their complex material interfaces and exposure to harsh hygrothermal conditions pose significant reliability concerns, particularly interfacial delamination. Accordingly, this study experimentally evaluated the interfacial adhesion at the polyimide (PI)/copper interface of a typical FO package following moisture exposure, using double cantilever beam (DCB) tests to determine the critical strain energy release rate GC. In addition, a comprehensive three-dimensional finite element (FE) model accounting for the effects of moisture diffusion, thermal loading, and mechanical stress was developed to simulate the hygrothermal behavior of the package. The model was validated by comparing the simulated results for the package warpage with the experimental measurements. The virtual crack closure technique (VCCT) was then applied to further analyze the delamination behavior of the FO package at the critical interfaces under combined hygrothermal loading. Finally, the Taguchi method was employed to evaluate the effects of the key structural design parameters of the FO package, such as the PI thickness and epoxy molding compound (EMC) material, on the strain energy release rate (GI) and to identify the optimal package configuration. The results showed that increasing the PI thickness and using an EMC with a compatible coefficient of thermal expansion significantly reduced GI and thus mitigated the risk of delamination. The findings presented in this study offer practical design guidance for enhancing the mechanical reliability of FO packages in humid and thermally demanding environments.</div></div>","PeriodicalId":18240,"journal":{"name":"Materials Science in Semiconductor Processing","volume":"201 ","pages":"Article 110037"},"PeriodicalIF":4.6,"publicationDate":"2025-09-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145060293","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Dual-stage temporal laser stealth dicing of silicon carbide wafers with continuous crack propagation","authors":"Jie Li ,&nbsp;Bo Liu ,&nbsp;Yi Zhang","doi":"10.1016/j.mssp.2025.110067","DOIUrl":"10.1016/j.mssp.2025.110067","url":null,"abstract":"<div><div>To address the difficulty of simultaneously regulating surface chipping damage and surface heat accumulation damage in laser stealth cutting (LSD) of silicon carbide (SiC) wafers, a novel dual-stage temporal laser stealth dicing (DLSD) method is proposed in this work. This method employs a two-stage laser process: first, a low-power modifying laser generates pre-modified SiC layers, followed by a high-power-inducing laser that promotes continuous crack propagation. Compared with traditional LSD methods, the DLSD method can achieve continuous propagation of induced cracks, thereby reducing surface chipping damage, without causing thermal accumulation damage on the surface, further improving wafer cutting quality. The mechanism of continuous crack propagation induced by the DLSD method is analyzed in detail. The pre-modified layer of amorphous SiC generated by the modifying laser enhances the absorption of the inducing laser, resulting in an increase in the length of the modified layer and promoting continuous crack propagation. The influence of inducing laser power and scanning speed on cutting quality is also thoroughly investigated. Results show that increasing the inducing laser power and scanning speed improves the length of the modified layer and induces continuous crack propagation. Specifically, when the modified laser power is 0.14 W, the induced laser power is 0.18 W, and the scanning speed is 800 mm/s, the maximum chipping width and sidewall surface roughness reach their minimum values of 6.0 μm and 1.15 μm, respectively.</div></div>","PeriodicalId":18240,"journal":{"name":"Materials Science in Semiconductor Processing","volume":"201 ","pages":"Article 110067"},"PeriodicalIF":4.6,"publicationDate":"2025-09-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145060294","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Numerical and experimental investigation of CdTe crystal growth assisted by a thermal–shielding ring for stable interface control","authors":"Zhicheng Zhu ,&nbsp;Youbao Ni ,&nbsp;Xuezhou Yu ,&nbsp;Changbao Huang ,&nbsp;Haixin Wu ,&nbsp;Qianqian Hu ,&nbsp;Huabei Qi ,&nbsp;Ya Li ,&nbsp;Guojin Liu ,&nbsp;Ping Yu ,&nbsp;Weihao Chen ,&nbsp;Qingli Zhang","doi":"10.1016/j.mssp.2025.110059","DOIUrl":"10.1016/j.mssp.2025.110059","url":null,"abstract":"<div><div>Cadmium telluride (CdTe) has been widely applied in nuclear radiation detection and infrared optoelectronics. However, twins and grain boundaries formed during growth remain a critical limitation for large–scale application, due to their impact on crystal yield and production cost. In this study, we present a simple and effective approach to stabilize a slightly convex solid–liquid interface by introducing a thermal–shielding ring (TS–ring) into the thermal gradient zone of a Vertical Bridgman furnace. Numerical simulations were conducted to optimize the TS–ring geometry, and crystal growth experiments were performed for validation. The resulting CdTe single crystal exhibited large volumes free of twins and grain boundaries. X–ray rocking curve revealed the full width at half maximum of the as–grown CdTe crystal is around 0.05°. Infrared transmittance reached 65 %–68 %, the etch pit density was below 3 × 10⁴ cm⁻², and the resistivity reached 4.3 × 10⁷ Ω cm. These results demonstrate that stabilizing a slightly convex interface via the TS–ring is an effective strategy for improving the quality and yield of CdTe single crystals.</div></div>","PeriodicalId":18240,"journal":{"name":"Materials Science in Semiconductor Processing","volume":"201 ","pages":"Article 110059"},"PeriodicalIF":4.6,"publicationDate":"2025-09-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145057268","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Investigation of gate metal effects on barrier lowering, on-resistance, and breakdown voltage in p-GaN gate HEMTs","authors":"Mao Jia ,&nbsp;Bin Hou ,&nbsp;Ling Yang ,&nbsp;Lixin Guo ,&nbsp;Xuefeng Zheng ,&nbsp;Xiaohua Ma ,&nbsp;Yue Hao","doi":"10.1016/j.mssp.2025.110057","DOIUrl":"10.1016/j.mssp.2025.110057","url":null,"abstract":"<div><div>This study systematically examines the impact mechanisms of gate metal selection on the performance of <em>p</em>-GaN HEMT. Through comprehensive analysis combining gate-source capacitance characterization with output current density and on-resistance measurements at the gate/<em>p</em>-GaN interface, we reveal that the effective gate voltage applied to the AlGaN/GaN channel decreases with reducing metal work function, consequently leading to lower output current and higher on-resistance. Quantitative characterization shows average drain-induced barrier lowering coefficients of 2 mV/V, 22.2 mV/V, and 46.7 mV/V for Ni/<em>p</em>-GaN, Cu/<em>p</em>-GaN, and W/<em>p</em>-GaN HEMTs, respectively, with corresponding off-state breakdown fields of 0.62 MV/cm, 0.56 MV/cm, and 0.48 MV/cm. Numerical simulations and band diagram analyses consistently verify and elucidate the gate metal's impact on both drain-induced barrier lowering effects and off-state breakdown characteristics.</div></div>","PeriodicalId":18240,"journal":{"name":"Materials Science in Semiconductor Processing","volume":"201 ","pages":"Article 110057"},"PeriodicalIF":4.6,"publicationDate":"2025-09-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145045473","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}