Materials Science in Semiconductor Processing最新文献_第9页

Green anti-solvent for efficient and stable larger-size perovskite solar cells and modules

IF 4.2 3区工程技术

Materials Science in Semiconductor Processing Pub Date : 2025-01-20 DOI: 10.1016/j.mssp.2025.109314

Min Hu , Yifan Zhao , Dongcheng Li , Yanqing Zhu , Mi Xu , Jianfeng Lu , Kan Liu

{"title":"Green anti-solvent for efficient and stable larger-size perovskite solar cells and modules","authors":"Min Hu , Yifan Zhao , Dongcheng Li , Yanqing Zhu , Mi Xu , Jianfeng Lu , Kan Liu","doi":"10.1016/j.mssp.2025.109314","DOIUrl":"10.1016/j.mssp.2025.109314","url":null,"abstract":"<div><div>Metal halide perovskites have obtained efficiency more than 26% when applied in small area solar cells, yet maintaining efficiency and stability while scaling area remains a challenge. Anti-solvent treatment is a simple and reliable method to fabricate high quality perovskite films in the lab. However, most of anti-solvents used for larger area perovskite films are toxic halogenated solvent and the studies on green anti-solvent are rare. Herein, we scrutinize the choice of green anti-solvent in the fabrication of larger-area perovskite films for solar modules by examining their intrinsic properties. We choose three green anti-solvents with stepwise change of saturation vapor pressures and boiling points, i.e. ethyl acetate, trifluorotoluene, and anisole to study their impact to the perovskite film morphology, optoelectronic properties, and device performance. We find that perovskite films made with trifluorotoluene having a moderate saturation vapor pressure and boiling point present a more compact morphology, a longer carrier lifetime, and a better performance when assembled in cm-size solar cells and modules. As a result, we achieve champion efficiencies of 19.3% and 18.0% with mask areas of 1.0 cm<sup>2</sup> and 10.0 cm<sup>2</sup> under AM 1.5G illumination. Moreover, the non-encapsulated devices retained more than 95% of their initial efficiencies after 500 h at ambient condition (ISOS-D-1). These results provide a simple and reproducible procedure for perovskite solar module fabrication in the lab.</div></div>","PeriodicalId":18240,"journal":{"name":"Materials Science in Semiconductor Processing","volume":"189 ","pages":"Article 109314"},"PeriodicalIF":4.2,"publicationDate":"2025-01-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143130949","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Effect of C & Si decoration on the Boron Phosphide (BP) nanosheets for gas sensing applications – A first principles investigation

IF 4.2 3区工程技术

Materials Science in Semiconductor Processing Pub Date : 2025-01-20 DOI: 10.1016/j.mssp.2025.109295

K.S. Bharath Shirpi Thasan, C. Poornimadevi, C. Preferencial Kala, D. John Thiruvadigal

{"title":"Effect of C & Si decoration on the Boron Phosphide (BP) nanosheets for gas sensing applications – A first principles investigation","authors":"K.S. Bharath Shirpi Thasan, C. Poornimadevi, C. Preferencial Kala, D. John Thiruvadigal","doi":"10.1016/j.mssp.2025.109295","DOIUrl":"10.1016/j.mssp.2025.109295","url":null,"abstract":"<div><div>In recent times, there has been a growing interest in Boron Phosphide among researchers, and an appreciation of its unique nanoscale properties. For this study, we thoroughly examined the stability, structural and electronic properties of pure Boron Phosphide (BP), carbon decorated Boron Phosphide (C-BP) and silicon decorated Boron Phosphide (Si-BP) and the adsorption properties towards hydrogen-based gases like NH3, HCN and H2S were studied using Density Functional Theory. The stability of the system is obtained by calculating the formation energy and AIMD simulation. The electronic properties of the previous system and the subsequent system after adsorption of the gas molecules were analysed by calculating the adsorption energy, density of states (DOS), band structure, projected density of states (P-DOS), charge transfer, Electron Localization Function (ELF) and Electron Difference Density (EDD) of the model. Based on the results, the formation energy of the C & Si decorated system is increasing on the negative scale indicating that the doped systems are more stable. There have been noticeable changes in the electronic states carbon and silicon-decorated Boron Phosphide compared with the pure boron phosphide. Also, adsorption analysis depicted that the NH3 shows notable adsorption than other gases. This theoretical analysis shows that the decorated Boron Phosphide exhibits good stability and electronic properties compared to the pure Boron Phosphide. Moreover, the observed results indicated that C & Si decorated BP can be utilized as a gas sensing device to detect NH<sub>3</sub>, HCN & H<sub>2</sub>S gases.</div></div>","PeriodicalId":18240,"journal":{"name":"Materials Science in Semiconductor Processing","volume":"189 ","pages":"Article 109295"},"PeriodicalIF":4.2,"publicationDate":"2025-01-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143130955","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Structural regulation of WS2/XSe (X = Al, Ga, In) heterostructure from first-principles calculations for bandstructure engineering

IF 4.2 3区工程技术

Materials Science in Semiconductor Processing Pub Date : 2025-01-19 DOI: 10.1016/j.mssp.2025.109305

Xin Zhou , Lai Yuan , Quancai Yue, Dan Zhang, Honglin Li

{"title":"Structural regulation of WS2/XSe (X = Al, Ga, In) heterostructure from first-principles calculations for bandstructure engineering","authors":"Xin Zhou , Lai Yuan , Quancai Yue, Dan Zhang, Honglin Li","doi":"10.1016/j.mssp.2025.109305","DOIUrl":"10.1016/j.mssp.2025.109305","url":null,"abstract":"<div><div>Building on prior investigations into the electronic properties of two-dimensional (2D) III-VI binary monolayers, this study explores their potential for advanced applications. While transition metal dichalcogenides (TMDCs) have garnered significant attention in recent years, their practical utility is often constrained by rapid carrier recombination. Extensive research has identified efficient strategies for designing heterostructures with optimized band alignments. In this work, density functional theory (DFT) is employed to construct novel heterostructures by integrating monolayer WS<sub>2</sub> with XSe (X = Al, Ga, In) through van der Waals (vdW) interactions, resulting in a type-II band alignment. WS<sub>2</sub>-XSe heterostructures are shown to outperform pristine structures in meeting key photocatalytic requirements. The results demonstrate that the band alignment can transition between type-I and type-II under an applied electric field, while strain maintains a broader type-II range, facilitating efficient carrier separation. Specifically, for WS<sub>2</sub>-AlSe, the band gap decreases as strain increases. The valence band maximum (VBM) is derived from WS<sub>2</sub>, whereas the conduction band minimum (CBM) is contributed by AlSe within a strain range of −15 % to −2.5 %. It should be noted that the predicted photocatalytic efficiency reaches up to 18 % with external strain for WS<sub>2</sub>-AlSe. Additionally, under pH = 7, all three heterostructures are found to be well-suited for photocatalytic applications. This study highlights a versatile approach for designing group III-VI-based heterostructures, particularly WS<sub>2</sub>-AlSe, which exhibit significant flexibility and tunability.</div></div>","PeriodicalId":18240,"journal":{"name":"Materials Science in Semiconductor Processing","volume":"189 ","pages":"Article 109305"},"PeriodicalIF":4.2,"publicationDate":"2025-01-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143131605","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

First-principles calculations to investigate the impact of hydrostatic pressure on the physical properties of LiXCl3 (X = Be, Mg) chloroperovskites: An insight for optoelectronics application

IF 4.2 3区工程技术

Materials Science in Semiconductor Processing Pub Date : 2025-01-19 DOI: 10.1016/j.mssp.2025.109296

Md. Tanvir Hossain , Fatema-Tuz- Zahra , Md. Rasidul Islam , Sohail Ahmad

{"title":"First-principles calculations to investigate the impact of hydrostatic pressure on the physical properties of LiXCl3 (X = Be, Mg) chloroperovskites: An insight for optoelectronics application","authors":"Md. Tanvir Hossain , Fatema-Tuz- Zahra , Md. Rasidul Islam , Sohail Ahmad","doi":"10.1016/j.mssp.2025.109296","DOIUrl":"10.1016/j.mssp.2025.109296","url":null,"abstract":"<div><div>External pressure significantly alters the physical properties of inorganic halide perovskites, providing the way for the mass production of several optoelectronic elements. This work evaluates the effects of pressure on the mechanical, optical, structural, electrical, phonon, and thermal attributes of LiXCl<sub>3</sub> (X = Be, Mg) perovskites using density functional theory (DFT). LiBeCl<sub>3</sub> and LiMgCl<sub>3</sub> are structurally and thermodynamically stable between 0 and 200 GPa, based on the formation enthalpy and Born stability criteria. LiBeCl<sub>3</sub> and LiMgCl<sub>3</sub> both have a positive phonon response, indicating their dynamic stability. Under applied pressure, LiXCl<sub>3</sub> (X = Be, Mg) possesses an adjustable band gap in the spectrum of visible light, making it a good candidate for a solar cell absorber surface. LiMgCl<sub>3</sub>, an indirect band gap semiconductor, exhibits an intriguing behavior whereby it transforms into a direct band gap semiconductor upon application of 150 GPa of pressure. The electronic condition is represented by the partial density of states (PDOS); however, its intensity changes with pressure. It is notably attributed to Cl-3p in the valence band (VB) and Li-2p in the conduction band (CB). According to the calculated refractive index and static real component of the dielectric function, pressurized LiXCl<sub>3</sub> (where X = Be, Mg) is suitable for photonics. Ultraviolet scanners can benefit from their great absorption and low reflection at elevated energies under pressure. Increased pressure causes increased elastic constants, ductility, hardness, elastic moduli, and anisotropy. Furthermore, pressure-induced modifications to mechanical features have potential uses in adaptive electronic devices, structural design, and many other fields.</div></div>","PeriodicalId":18240,"journal":{"name":"Materials Science in Semiconductor Processing","volume":"189 ","pages":"Article 109296"},"PeriodicalIF":4.2,"publicationDate":"2025-01-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143131606","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Multipath-induced c-axis orientation of aluminum nitride films deposited using direct-current magnetron sputtering

IF 4.2 3区工程技术

Materials Science in Semiconductor Processing Pub Date : 2025-01-19 DOI: 10.1016/j.mssp.2025.109304

Huanneng Zhu , Jin Wu , Zhenhuai Yang , Kesheng Guo , Jing Liu , Lei Liu , Chuandong Zhang , Jie Bai , Hong Liu , Yongneng Xiao , Lang Hu , Qiang Hu , Qiang Wang

{"title":"Multipath-induced c-axis orientation of aluminum nitride films deposited using direct-current magnetron sputtering","authors":"Huanneng Zhu , Jin Wu , Zhenhuai Yang , Kesheng Guo , Jing Liu , Lei Liu , Chuandong Zhang , Jie Bai , Hong Liu , Yongneng Xiao , Lang Hu , Qiang Hu , Qiang Wang","doi":"10.1016/j.mssp.2025.109304","DOIUrl":"10.1016/j.mssp.2025.109304","url":null,"abstract":"<div><div>This study successfully fabricated high-quality c-axis oriented aluminum nitride (AlN) thin films using direct-current reactive magnetron sputtering on a Mo/Si (111) substrate, where the Mo layer has a thickness of 350 nm. The Mo metal layer not only serves as an effective seed layer for AlN growth but also, due to its excellent conductivity and low thermal expansion mismatch, functions as an electrode material for AlN-based micro-electro-mechanical system (MEMS) devices. Few studies explored the fabrication of AlN films on Mo/Si substrates. By adjusting the sputtering power, we successfully achieved a transition in the crystal orientation of AlN from (100) to (002), and the surface morphology changed from spiral-like to regular pebble-like. Further optimization of the growth temperature to 550 °C led to the realization of fully c-axis-oriented AlN films, with the full width at half maximum of the AlN (002) diffraction peak being 0.173°, indicating superior crystal quality. Photoluminescence analysis revealed significant blue and green emission peaks, and with increasing growth temperature, a reduction in oxygen impurities and defects resulted in improved crystallinity and optical properties. This study provides valuable technical insights and theoretical guidance for the preparation of high-performance AlN thin films, particularly in the application of MEMS devices where AlN can effectively function as an electrode material.</div></div>","PeriodicalId":18240,"journal":{"name":"Materials Science in Semiconductor Processing","volume":"189 ","pages":"Article 109304"},"PeriodicalIF":4.2,"publicationDate":"2025-01-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143130947","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Enhanced adsorption of CO on B, N, Ni co-doped graphene: A first-principles study

IF 4.2 3区工程技术

Materials Science in Semiconductor Processing Pub Date : 2025-01-18 DOI: 10.1016/j.mssp.2025.109307

Liuxu Zhao, Yutong Zou, Yaqi She, Chunlei Kou, Miao Zhang, Yuanye Tian

{"title":"Enhanced adsorption of CO on B, N, Ni co-doped graphene: A first-principles study","authors":"Liuxu Zhao, Yutong Zou, Yaqi She, Chunlei Kou, Miao Zhang, Yuanye Tian","doi":"10.1016/j.mssp.2025.109307","DOIUrl":"10.1016/j.mssp.2025.109307","url":null,"abstract":"<div><div>With the increasingly serious environmental pollution, it is of great significance for gas sensors to detect and adsorb harmful gases. Doping modified graphene as a toxic gas sensor has been widely studied in recent years. The adsorptions of B-doped graphene (B-G), N-doped graphene (N-G), Ni-doped graphene (Ni-G), B-Ni co-doped graphene (B-Ni-G), and N-Ni co-doped graphene (N-Ni-G) toward the toxic gas CO have been studied using first-principles calculations. The adsorption configuration, charge transfer, electronic properties, sensitivity and recovery time of CO on single doped graphene systems and co-doped graphene systems are discussed in detail. It is found that CO is weakly adsorbed on B-G and N-G with a high adsorption energy, while Ni-G has a relatively enhanced adsorption energy toward CO. Compared to single doped graphene, N-Ni-G exhibits stronger adsorption toward CO with lower adsorption energy than other substrates. The results show that CO adsorption on the co-doped graphene can enhance the conductivity of the structure due to the change of electronic properties. The theoretical recovery time is also calculated to estimate the reusability of the substrate in gas sensing. The N-Ni-G exhibits stronger interaction with CO than B-Ni-G, and N-Ni-G (ortho) is more likely to serve as a promising and efficient CO gas sensing material.</div></div>","PeriodicalId":18240,"journal":{"name":"Materials Science in Semiconductor Processing","volume":"189 ","pages":"Article 109307"},"PeriodicalIF":4.2,"publicationDate":"2025-01-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143131604","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

N doped armchair silicene nanoribbon as a promising biosensor for detection of VOCs in healthcare monitoring: A first principles study

IF 4.2 3区工程技术

Materials Science in Semiconductor Processing Pub Date : 2025-01-18 DOI: 10.1016/j.mssp.2025.109302

R. Akash, A. Sakthi Balaji, K. Janani Sivasankar, Hariharan Rajalakshmi Mohanraj, D. John Thiruvadigal

{"title":"N doped armchair silicene nanoribbon as a promising biosensor for detection of VOCs in healthcare monitoring: A first principles study","authors":"R. Akash, A. Sakthi Balaji, K. Janani Sivasankar, Hariharan Rajalakshmi Mohanraj, D. John Thiruvadigal","doi":"10.1016/j.mssp.2025.109302","DOIUrl":"10.1016/j.mssp.2025.109302","url":null,"abstract":"<div><div>Volatile organic compounds (VOCs) present in the exhaled breath of patients act as biomarkers, facilitating health monitoring and the early diagnosis of various diseases. A nanomaterial-based sensor array is the easiest, cost-effective, and real-time method for detecting these biomarkers. Armchair silicene nanoribbon (ASiNR) is a material that exhibits high efficiency in low-power device applications because it has numerous surface-active sites and a low-buckling nature. In this current study, we utilized Density Functional Theory (DFT) in conjunction with the non-equilibrium Green's function (NEGF) to examine the ASiNR system's ability to detect lung cancer breath biomarkers. We investigated the interaction between the vacancy-induced (Vac), boron (B), and nitrogen (N) doped ASiNR and the VOCs 1-propanal and Acetone. The calculated adsorption energy values disclose that N-ASiNR has a better adsorption energy value for both biomarkers. The charge transfer values indicate that the N-ASiNR demonstrates strong adsorption capabilities. Furthermore, N-ASiNR demonstrates the quickest recovery time of 0.02 s at room temperature for the acetone biomarker. In comparison to earlier research, we achieved a superior sensitivity for both VOCs using the proposed N-ASiNR biosensor. Our findings indicate that N-doped ASiNR serves as an effective biosensor for the detection of lung cancer biomarkers.</div></div>","PeriodicalId":18240,"journal":{"name":"Materials Science in Semiconductor Processing","volume":"189 ","pages":"Article 109302"},"PeriodicalIF":4.2,"publicationDate":"2025-01-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143130950","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Demonstration of bipolar resistance switching characteristics of sol-gel derived BaOx resistive memory

IF 4.2 3区工程技术

Materials Science in Semiconductor Processing Pub Date : 2025-01-18 DOI: 10.1016/j.mssp.2025.109297

Chih-Chieh Hsu , Zong-Lin Cai , Min-Yi Hsu , Wun-Ciang Jhang , Sungjun Kim

{"title":"Demonstration of bipolar resistance switching characteristics of sol-gel derived BaOx resistive memory","authors":"Chih-Chieh Hsu , Zong-Lin Cai , Min-Yi Hsu , Wun-Ciang Jhang , Sungjun Kim","doi":"10.1016/j.mssp.2025.109297","DOIUrl":"10.1016/j.mssp.2025.109297","url":null,"abstract":"<div><div>Resistance switching (RS) characteristics of Ba-related compounds such as BaTiO<sub>x</sub> and BaZrO<sub>x</sub> have been widely reported in literature. However, resistive random-access memory (RRAM) fabricated using a BaO<sub>x</sub> film as an RS layer is still unexplored. In this article, we use a sol-gel derived BaO<sub>x</sub> RS layer to realize a Cu/BaO<sub>x</sub>/n<sup>+</sup>-Si bipolar RRAM. The RS behavior is highly sensitive to annealing temperature of the BaO<sub>x</sub> film. The as-fabricated BaO<sub>x</sub> device shows a superior insulation property with a breakdown voltage of ∼45 V, and RS behavior is not observed. Nevertheless, for the device fabricated using 300 °C-annealed BaO<sub>x</sub> film as the RS layer, significant bipolar RS feature with write and erase voltages of 4.8 and −1.58 V can be obtained. In addition, the RRAM exhibits a memory window of 10<sup>6</sup>, which is larger than those of bipolar RRAMs reported recently. Resistance switching mechanism and carrier transport behavior are investigated and evidenced by I-V measurement, curve analysis, and material analyses. Stability and read-disturb immunity at 25 and 85 °C are examined. Erase and write speeds are also explored.</div></div>","PeriodicalId":18240,"journal":{"name":"Materials Science in Semiconductor Processing","volume":"189 ","pages":"Article 109297"},"PeriodicalIF":4.2,"publicationDate":"2025-01-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143131602","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Tailoring the properties of physical vapor deposition grown α-MoO3 as an active optoelectronic material: Study on the effect of thickness and proton irradiation

IF 4.2 3区工程技术

Materials Science in Semiconductor Processing Pub Date : 2025-01-17 DOI: 10.1016/j.mssp.2025.109298

Ravindra Kumar , Vikash Mishra , Tejendra Dixit , S.N. Sarangi , D. Samal , Swastibrata Bhattacharyya , Prahalad Kanti Barman , Pramoda K. Nayak , M.S. Ramachandra Rao

{"title":"Tailoring the properties of physical vapor deposition grown α-MoO3 as an active optoelectronic material: Study on the effect of thickness and proton irradiation","authors":"Ravindra Kumar , Vikash Mishra , Tejendra Dixit , S.N. Sarangi , D. Samal , Swastibrata Bhattacharyya , Prahalad Kanti Barman , Pramoda K. Nayak , M.S. Ramachandra Rao","doi":"10.1016/j.mssp.2025.109298","DOIUrl":"10.1016/j.mssp.2025.109298","url":null,"abstract":"<div><div>Here, we report the synthesis of layered α-MoO<sub>3</sub> flakes using the physical vapor deposition (PVD) technique and mechanical exfoliation of α-MoO<sub>3</sub> ribbons (obtained from the PVD technique). Proton irradiation has been carried out on the exfoliated multilayer α-MoO<sub>3</sub> flake using a 30 keV source with a fluence of 10<sup>16</sup> ions/cm<sup>2</sup> to tune the light emission from this material. The excitation wavelength-dependent study has been carried out on the proton irradiated α-MoO<sub>3</sub> flake. Interestingly, a sharp photoluminescence (PL) peak emerges in the proton irradiated α-MoO<sub>3</sub> flake at 540 nm, which is absent in the non-irradiated flakes, and the proton irradiation-induced PL is found to be independent of the excitation wavelength, indicating the formation of localized defect states. Furthermore, the temperature-dependent PL studies on the proton-irradiated flakes confirm the robust stability of the emission. A rigorous theoretical calculation has been carried out to understand the origin of the additional peak at 540 nm in PL spectra. Results obtained from density functional theory (DFT) calculations suggest that the PL emission originates due to the presence of oxygen defect states in the irradiated α-MoO<sub>3</sub> flake, while such additional peak at a lower energy range is absent in the case of non-irradiated α-MoO<sub>3</sub>. The present study can be useful in exploring proton irradiated α-MoO<sub>3</sub> for optoelectronic applications.</div></div>","PeriodicalId":18240,"journal":{"name":"Materials Science in Semiconductor Processing","volume":"189 ","pages":"Article 109298"},"PeriodicalIF":4.2,"publicationDate":"2025-01-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143130953","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Effect of UV/ozone treatment in chemical cleaning procedure on photoemission performance of GaAs and GaN photocathodes

IF 4.2 3区工程技术

Materials Science in Semiconductor Processing Pub Date : 2025-01-17 DOI: 10.1016/j.mssp.2025.109294

Jian Liu , Yijun Zhang , Cheng Feng , Shuai Cheng , Rongsheng Zhu

{"title":"Effect of UV/ozone treatment in chemical cleaning procedure on photoemission performance of GaAs and GaN photocathodes","authors":"Jian Liu , Yijun Zhang , Cheng Feng , Shuai Cheng , Rongsheng Zhu","doi":"10.1016/j.mssp.2025.109294","DOIUrl":"10.1016/j.mssp.2025.109294","url":null,"abstract":"<div><div>To obtain a cleaner surface and enhance the photoemission performance of III-V photocathode, a comparative study of cleaning procedure using acidic solutions and UV/Ozone treatment, respectively, is investigated in GaAs and GaN photocathodes. The subsequent heat treatment and activation are carried out and the quantum efficiencies of GaAs and GaN photocathodes taking the different cleaning methods are compared. The results show that the quantum efficiency of GaN photocathodes with UV/Ozone treatment can be higher than using acidic solutions, while for GaAs photocathodes, the results are completely different. By using X-ray photoelectron spectroscopy analysis, we summarize the characteristics of these treatments, trying to find the function mechanism. The XPS spectra show that UV/Ozone treatment can effectively restrain carbon contaminations of these photocathodes. But the strong oxidizing properties of UV/Ozone treatment on GaAs surface leads to the generation of more oxides, and even the high-temperature heating cannot remove them. Conversely, no additional oxidation of GaN by UV/Ozone treatment is observed, and the reduced carbon contamination results in an increase of quantum efficiency of the GaN photocathode.</div></div>","PeriodicalId":18240,"journal":{"name":"Materials Science in Semiconductor Processing","volume":"189 ","pages":"Article 109294"},"PeriodicalIF":4.2,"publicationDate":"2025-01-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143130954","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0