Materials Science in Semiconductor Processing最新文献

{"title":"Electrode variability and its impact on the characteristics of M@C80 molecular junctions (M = P, S, As, Se)","authors":"Anhar A. Oda ,&nbsp;Alaa A. Al-Jobory ,&nbsp;Sameer Nawaf ,&nbsp;Nabeel F. Lattoofi ,&nbsp;Moaaed Motlak ,&nbsp;Ali Ismael","doi":"10.1016/j.mssp.2025.109822","DOIUrl":"10.1016/j.mssp.2025.109822","url":null,"abstract":"<div><div>Consideration how electrons move through molecular junctions will enable researchers to create superior thermoelectric energy conversion materials. This research applies density functional theory (DFT) combined with the non-equilibrium Green's function (NEGF) formalism to study the electronic and thermoelectric behavior of metalloid-endohedral fullerenes (M@C₈₀, M = P, S, As, Se) connected to gold and graphene electrodes. The transmission coefficient T(E) undergoes significant changes when metalloids are introduced into C₈₀, which creates unique electronic transport characteristics. Metalloid-doped systems achieve notable improvements in thermoelectric response and performance metrics like the Seebeck coefficient (S) and figure of merit (ZT), especially when integrated with graphene electrodes. Se@C₈₀ surpasses all other dopants in terms of thermal conductance and thermoelectric performance across both tested electrode types. Doping with metals is critical since it is important to change electronic transport properties and improve thermoelectric efficiency, which provides useful information for developing new molecular electronics and nanoscale energy conversion devices.</div></div>","PeriodicalId":18240,"journal":{"name":"Materials Science in Semiconductor Processing","volume":"199 ","pages":"Article 109822"},"PeriodicalIF":4.2,"publicationDate":"2025-07-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144563652","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Development of high-performance surface acoustic wave solar-blind UV photodetector based on ɛ-Ga2O3","authors":"Xiangyun Zhang ,&nbsp;Kewei Liu ,&nbsp;Jialin Yang ,&nbsp;Xing Chen ,&nbsp;Yongxue Zhu ,&nbsp;Zhen Cheng ,&nbsp;Binghui Li ,&nbsp;Lei Liu ,&nbsp;Dezhen Shen","doi":"10.1016/j.mssp.2025.109820","DOIUrl":"10.1016/j.mssp.2025.109820","url":null,"abstract":"<div><div>This paper explores the development and performance of an <em>ɛ</em>-Ga₂O₃-based surface acoustic wave (SAW) solar-blind UV photodetector. A phase-pure <em>ɛ</em>-Ga₂O₃ film with a 300-nm thickness was heteroepitaxially fabricated on a sapphire substrate via metal-organic chemical vapor deposition (MOCVD) and subsequently processed into a SAW device with a resonant frequency of 270.883 MHz. The photodetector exhibits exceptional performance, including a maximum sensitivity of 21.23 ppm/(μW/cm²) under 255 nm illumination and a high quality-factor of 1632. Additionally, the device achieves fast response times and excellent spectral selectivity. This work presents a viable approach for developing sensitive and reliable SAW-based solar-blind UV photodetectors.</div></div>","PeriodicalId":18240,"journal":{"name":"Materials Science in Semiconductor Processing","volume":"199 ","pages":"Article 109820"},"PeriodicalIF":4.2,"publicationDate":"2025-07-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144536217","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Cation-exchange synthesis of AgBiS2 and AgBiSe2 quantum dots: A scalable strategy for large-area solar absorbers","authors":"Seungmin Baek ,&nbsp;Young-Ho Lee ,&nbsp;So Jeong Shin ,&nbsp;Hyo-Geun Kwon ,&nbsp;Jae Young Noh ,&nbsp;Jong H. Kim ,&nbsp;Sang-Wook Kim ,&nbsp;Sunghoon Kim","doi":"10.1016/j.mssp.2025.109812","DOIUrl":"10.1016/j.mssp.2025.109812","url":null,"abstract":"<div><div>The cation exchange reaction is the post-treatment process of synthesized colloidal nanocrystals that enables the formation of unique heterostructures as well as facilitates doping, alloying, and other modifications that are typically challenging to achieve through conventional methods. In this work, we synthesized AgBiS₂ and AgBiSe₂ Quantum dots (QDs), which have emerged as eco-friendly absorbers for solar cell, through the cation exchange method. We incorporated the synthesized quantum dots into solar cells, utilizing aerosol-assisted deposition for the absorption layer. Particularly, we demonstrated that aerosol-assisted deposition (AAD) maintains a uniform film regardless of substrate size and is more advantageous for continuous processes compared to conventional spin coating. To verify this, we deposited films on a large-area substrate and measured the thickness using SEM, evaluating the work function (WF) at various positions to confirm the homogeneous charge transport properties of the deposited films.</div></div>","PeriodicalId":18240,"journal":{"name":"Materials Science in Semiconductor Processing","volume":"199 ","pages":"Article 109812"},"PeriodicalIF":4.2,"publicationDate":"2025-07-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144522437","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Towards stable and efficient CsPbBr3 solar cells: A one-step spin coating approach with ZnO additives","authors":"Soumya Sundar Parui ,&nbsp;V. Krishnapressad ,&nbsp;Ram Kumar ,&nbsp;Nithin Xavier ,&nbsp;R Ramesh Babu ,&nbsp;Vipul Kheraj","doi":"10.1016/j.mssp.2025.109811","DOIUrl":"10.1016/j.mssp.2025.109811","url":null,"abstract":"<div><div>In recent years, inorganic cesium lead halide perovskites (CsPbX₃, where X = Cl, Br, or I) have garnered significant interest in optoelectronic applications. Among them, CsPbBr₃ stands out due to its remarkable environmental stability, making it particularly suitable for photovoltaic applications. However, the traditional solution processing of CsPbBr₃ faces several challenges due to the poor solubility of CsBr, leading to defects such as pinholes and voids. In this study, we propose a zinc oxide assisted additive engineering strategy, utilizing a one-step spin deposition technique, to enhance the morphology, phase purity, and crystallinity of CsPbBr₃ films. This significantly minimizes defects and enhances the light absorption of the films. This enhancement leads to a significant improvement in the photovoltaic performance of CsPbBr₃ solar cells, raising the power conversion efficiency from 3.67% in the pristine device to 6.29% with the ZnO additive. Additionally, the device remains quite stable, retaining over 80 % of its original PCE after 15 days of exposure to the ambient atmosphere. Impedance spectroscopy demonstrates capacitance and conductance as a function of voltage and frequency. It emphasizes the role of space charge, junction capacitance, defect states, and forward bias on carrier transportation and recombination processes. Also, we validated the experimental findings through comparison with our numerical model, allowing for a holistic analysis that draws on both experimental and theoretical data. This work proposes ZnO as a promising additive to boost the performance and stability of perovskite solar cells.</div></div>","PeriodicalId":18240,"journal":{"name":"Materials Science in Semiconductor Processing","volume":"199 ","pages":"Article 109811"},"PeriodicalIF":4.2,"publicationDate":"2025-07-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144536216","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Construction of WO3/CoFe2O4 direct Z–scheme heterojunction for highly photocatalytic degradation of methyl orange","authors":"Qingwang Liu,&nbsp;Ying Meng,&nbsp;Mai Xu,&nbsp;Yinyue Li,&nbsp;Kuanying Li","doi":"10.1016/j.mssp.2025.109819","DOIUrl":"10.1016/j.mssp.2025.109819","url":null,"abstract":"<div><div>WO₃/CoFe₂O₄ (WO/CFO) direct Z-scheme heterojunction composites were prepared by hydrothermal synthesis and systematically analyzed using advanced characterization techniques. The photocatalytic activity of the composites towards methyl orange (MO) solution was investigated. The experimental results showed that the WO/CFO composite achieved 96.2 % removal of MO in 140 min, and its reaction rate constant was 2.36 and 1.9 times higher than that of WO₃ and CFO, respectively. The highly photocatalytic effect of this material can be attributed to the built-in electric field it generates, which is formed as a result of a rational energy level arrangement. This in turn gives rise to a direct Z–scheme charge transfer pathway, thus significantly improving the interfacial charge separated and transferred. Finally, the mechanisms of photocatalysis were thoroughly investigated by means of trapping experiments, electron paramagnetic resonance (EPR) and ultraviolet photoelectron spectroscopy (UPS) analysis techniques.</div></div>","PeriodicalId":18240,"journal":{"name":"Materials Science in Semiconductor Processing","volume":"199 ","pages":"Article 109819"},"PeriodicalIF":4.2,"publicationDate":"2025-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144518659","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Corrosion mechanisms and prevention strategies for heavy Ag wire bonds on Al pads under halogen–induced and high–temperature humidity conditions","authors":"Xing Wei,&nbsp;Junko Takahashi,&nbsp;Kohei Tatsumi","doi":"10.1016/j.mssp.2025.109816","DOIUrl":"10.1016/j.mssp.2025.109816","url":null,"abstract":"<div><div>This study investigates the corrosion behavior of heavy pure silver (Ag) wires wedge-bonded on aluminum (Al) pads in silicon carbide (SiC) – based power devices. In halogen-induced corrosion tests, bromine (Br) vapor released from epoxy molding compounds infiltrated the bonding interface and reacted with Ag–Al intermetallic compounds (IMCs), resulting in severe localized corrosion, particularly affecting the Ag₃Al phase. In separate high-temperature and high-humidity tests (85 °C, 85 % RH), the Al layer degraded via galvanic corrosion but stabilized once it was fully converted into IMCs. Three mitigation strategies were evaluated: (1) electroplating a nickel (Ni) layer around the bonding interface to block Br vapor and moisture; (2) electroplating a Ni layer directly onto the Ag wire to physically isolate it from the Al pad, thereby preventing the formation of halogen-susceptible IMCs. This Ni interlayer also reduced the electrochemical potential difference between Ag and Al, mitigating galvanic corrosion in humid environments; and (3) replacing the Al pad with a sputtered Au/Ni bilayer, which provided a chemically stable and corrosion-resistant interface. All three approaches effectively suppressed corrosion, demonstrating strong potential to enhance the long-term reliability of Ag wire bonding in harsh environments typical of SiC power modules.</div></div>","PeriodicalId":18240,"journal":{"name":"Materials Science in Semiconductor Processing","volume":"199 ","pages":"Article 109816"},"PeriodicalIF":4.2,"publicationDate":"2025-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144518660","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"DFT insights into the detection of NH3, CO, and SO2 gases by the penta-PtSiTe monolayer","authors":"Nicolas F. Martins ,&nbsp;José A.S. Laranjeira ,&nbsp;Djamel Bezzerga ,&nbsp;El-Abed Haidar ,&nbsp;Julio R. Sambrano","doi":"10.1016/j.mssp.2025.109777","DOIUrl":"10.1016/j.mssp.2025.109777","url":null,"abstract":"<div><div>This study investigates the penta-PtSiTe monolayer as an efficient sensor for toxic gases (NH<span><math><msub><mrow></mrow><mrow><mn>3</mn></mrow></msub></math></span>, CO, and SO<span><math><msub><mrow></mrow><mrow><mn>2</mn></mrow></msub></math></span>), highlighting its promising performance through density functional theory (DFT) simulations. For all three gases, the monolayer demonstrates strong chemisorption, with adsorption energies of −1.10 eV (NH<span><math><msub><mrow></mrow><mrow><mn>3</mn></mrow></msub></math></span>), −0.59 eV (CO), and −1.07 eV (SO<span><math><msub><mrow></mrow><mrow><mn>2</mn></mrow></msub></math></span>), indicating robust interactions with the substrate. Regarding its electronic response, the adsorption of NH<span><math><msub><mrow></mrow><mrow><mn>3</mn></mrow></msub></math></span>, CO and SO<span><math><msub><mrow></mrow><mrow><mn>2</mn></mrow></msub></math></span> decreases the material’s band gap by 0.18 eV, 0.15 eV, and 0.37 eV, respectively, suggesting a high sensitivity of the penta-PtSiTe sensor. The work function (WF) analysis further supports this, as the pristine monolayer has a WF of 4.79 eV, which decreases to 4.44 eV (NH<span><math><msub><mrow></mrow><mrow><mn>3</mn></mrow></msub></math></span>), 4.76 eV (CO), and 4.69 eV (SO<span><math><msub><mrow></mrow><mrow><mn>2</mn></mrow></msub></math></span>), reflecting a strong electronic affinity between the monolayer and all the molecules. Additionally, the monolayer exhibits rapid recovery times for gas desorption, especially at elevated temperatures, making it ideal for reusable sensor applications.</div></div>","PeriodicalId":18240,"journal":{"name":"Materials Science in Semiconductor Processing","volume":"199 ","pages":"Article 109777"},"PeriodicalIF":4.2,"publicationDate":"2025-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144522494","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"High output piezoelectric and triboelectric nanogenerators based on Y-doped ZnO for self-powered electronic devices","authors":"Aman Kumar,&nbsp;Richa Sharma","doi":"10.1016/j.mssp.2025.109814","DOIUrl":"10.1016/j.mssp.2025.109814","url":null,"abstract":"<div><div>Nowadays, harvesting energy from abundantly available mechanical energy by using piezoelectric nanogenerators (PENGs) and triboelectric nanogenerators (TENGs) has grabbed significant attention in the search for sustainable energy solutions. In the present study, PENGs and TENGs were constructed simply and cost-effectively using Y-doped ZnO (YZnO)/PVDF nanocomposite films. Y doped ZnO (YZnO) was added in different weight percentages (wt.%) into the polyvinylidene fluoride (PVDF) polymer. The maximum generated voltage and power density were 162 V and 0.89 mW/cm², respectively, measured for the PENG fabricated device with a nanocomposite film containing 15 wt% of YZnO in the PVDF. Furthermore, TENG constructed with the same nanocomposite film generates a superior voltage of 520 V and power density of 1.26 mw/cm². PENG and TENG devices practical applicability was demonstrated by successfully glowing the LEDs and powering small electronic equipments. Furthermore, the constructed devices also able to harvest the energy from the movements of human body like bending of elbow, finger, wrist and by shoe heel tapping. This study demonstrates the potential of employing YZnO nanoparticles as fillers in the PVDF matrix for the construction of high-performance PENG and TENG device for sustainable energy harvesting applications.</div></div>","PeriodicalId":18240,"journal":{"name":"Materials Science in Semiconductor Processing","volume":"199 ","pages":"Article 109814"},"PeriodicalIF":4.2,"publicationDate":"2025-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144522436","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Thermal damage analysis of FRAM in different interaction zones by continuous laser irradiation","authors":"Jianjie Gao,&nbsp;Enling Tang,&nbsp;Yafei Han,&nbsp;Chuang Chen,&nbsp;Mengzhou Chang,&nbsp;Kai Guo,&nbsp;Liping He","doi":"10.1016/j.mssp.2025.109810","DOIUrl":"10.1016/j.mssp.2025.109810","url":null,"abstract":"<div><div>A large number of high-energy electrons trapped by the geomagnetic field in the outer radiation belt of the earth seriously threaten the safety of the ferroelectric memory (FRAM) for spacecraft. In order to study the damage effect of FRAM under the action of high-energy electron beam flow, based on the dynamic response test of FRAM irradiated by continuous nanosecond laser, the surface steady-state temperature field distribution and electrical parameter evolution law of FRAM under continuous laser irradiation are obtained. The heat conduction process of continuous laser irradiated FRAM was simulated by using multiphysic-Comsol simulation software, and the temperature and stress distributions of the overall and internal structures of the FRAM under continuous laser irradiation were obtained. The optimal fitting function relationship between the output power of continuous laser and the maximum radiation temperature of FRAM in different irradiation regions is <span><math><mrow><mi>T</mi><mrow><mo>(</mo><mi>p</mi><mo>)</mo></mrow><mo>=</mo><mn>25.8</mn><mo>+</mo><mn>208.4</mn><mspace></mspace><mi>p</mi><mo>−</mo><mn>10.1</mn><msup><mi>p</mi><mn>2</mn></msup></mrow></math></span>. The results show that with the increase of continuous laser output power, the damage of FRAM caused by thermal effect and thermal stress is more serious, the influence on stored data is greater, the number of bytes in which an error occurs increases, and the function failure is faster. Under the same irradiation conditions, the CMOS peripheral circuits of FRAM are more sensitive than those of storage arrays and are more susceptible to functional failure of FRAM. Laser irradiation causes the CMOS peripheral circuit of FRAM to generate a micro-locking current greater than 0.6 mA, resulting in a temporary failure of the FRAM function. When the micro-locking current disappears, the FRAM function can be restored by itself.</div></div>","PeriodicalId":18240,"journal":{"name":"Materials Science in Semiconductor Processing","volume":"199 ","pages":"Article 109810"},"PeriodicalIF":4.2,"publicationDate":"2025-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144522495","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"First-principles study of the hole mobility of pristine and Mg-doped Ga2O3 under pressure","authors":"Chunyu Zhou ,&nbsp;Shuai Chen ,&nbsp;Wenhui Wan ,&nbsp;Yong Liu ,&nbsp;Guanyu Wang","doi":"10.1016/j.mssp.2025.109781","DOIUrl":"10.1016/j.mssp.2025.109781","url":null,"abstract":"&lt;div&gt;&lt;div&gt;Recently, much research effort has been denoted into the understanding of the electron transport of Ga&lt;span&gt;&lt;math&gt;&lt;msub&gt;&lt;mrow&gt;&lt;/mrow&gt;&lt;mrow&gt;&lt;mn&gt;2&lt;/mn&gt;&lt;/mrow&gt;&lt;/msub&gt;&lt;/math&gt;&lt;/span&gt;O&lt;span&gt;&lt;math&gt;&lt;msub&gt;&lt;mrow&gt;&lt;/mrow&gt;&lt;mrow&gt;&lt;mn&gt;3&lt;/mn&gt;&lt;/mrow&gt;&lt;/msub&gt;&lt;/math&gt;&lt;/span&gt;. However, the studies on the hole mobility of p-type Ga&lt;span&gt;&lt;math&gt;&lt;msub&gt;&lt;mrow&gt;&lt;/mrow&gt;&lt;mrow&gt;&lt;mn&gt;2&lt;/mn&gt;&lt;/mrow&gt;&lt;/msub&gt;&lt;/math&gt;&lt;/span&gt;O&lt;span&gt;&lt;math&gt;&lt;msub&gt;&lt;mrow&gt;&lt;/mrow&gt;&lt;mrow&gt;&lt;mn&gt;3&lt;/mn&gt;&lt;/mrow&gt;&lt;/msub&gt;&lt;/math&gt;&lt;/span&gt; remain limited. Using density functional theory, we explored the effects of pressure on the electronic structure and hole transport properties of pristine and Mg-doped Ga&lt;span&gt;&lt;math&gt;&lt;msub&gt;&lt;mrow&gt;&lt;/mrow&gt;&lt;mrow&gt;&lt;mn&gt;2&lt;/mn&gt;&lt;/mrow&gt;&lt;/msub&gt;&lt;/math&gt;&lt;/span&gt;O&lt;span&gt;&lt;math&gt;&lt;msub&gt;&lt;mrow&gt;&lt;/mrow&gt;&lt;mrow&gt;&lt;mn&gt;3&lt;/mn&gt;&lt;/mrow&gt;&lt;/msub&gt;&lt;/math&gt;&lt;/span&gt;. Mg dopants can induce p-type doping and magnetic moments in both &lt;span&gt;&lt;math&gt;&lt;mi&gt;β&lt;/mi&gt;&lt;/math&gt;&lt;/span&gt;- and &lt;span&gt;&lt;math&gt;&lt;mi&gt;α&lt;/mi&gt;&lt;/math&gt;&lt;/span&gt;-phases of Ga&lt;span&gt;&lt;math&gt;&lt;msub&gt;&lt;mrow&gt;&lt;/mrow&gt;&lt;mrow&gt;&lt;mn&gt;2&lt;/mn&gt;&lt;/mrow&gt;&lt;/msub&gt;&lt;/math&gt;&lt;/span&gt;O&lt;span&gt;&lt;math&gt;&lt;msub&gt;&lt;mrow&gt;&lt;/mrow&gt;&lt;mrow&gt;&lt;mn&gt;3&lt;/mn&gt;&lt;/mrow&gt;&lt;/msub&gt;&lt;/math&gt;&lt;/span&gt;. At zero pressure, both pristine and Mg-doped &lt;span&gt;&lt;math&gt;&lt;mi&gt;β&lt;/mi&gt;&lt;/math&gt;&lt;/span&gt;-Ga&lt;sub&gt;2&lt;/sub&gt;O&lt;sub&gt;3&lt;/sub&gt; has a low hole mobility (&lt;span&gt;&lt;math&gt;&lt;msub&gt;&lt;mrow&gt;&lt;mi&gt;μ&lt;/mi&gt;&lt;/mrow&gt;&lt;mrow&gt;&lt;mi&gt;h&lt;/mi&gt;&lt;/mrow&gt;&lt;/msub&gt;&lt;/math&gt;&lt;/span&gt;) in all directions, not exceeding 3.79 cm&lt;span&gt;&lt;math&gt;&lt;msup&gt;&lt;mrow&gt;&lt;/mrow&gt;&lt;mrow&gt;&lt;mn&gt;2&lt;/mn&gt;&lt;/mrow&gt;&lt;/msup&gt;&lt;/math&gt;&lt;/span&gt;/(V s). Pressure alters the position of the valence band maximum and decreases the hole effective mass along the &lt;span&gt;&lt;math&gt;&lt;mi&gt;y&lt;/mi&gt;&lt;/math&gt;&lt;/span&gt;-axis. At pressures of 40 GPa and 35 GPa, pristine and Mg-doped &lt;span&gt;&lt;math&gt;&lt;mi&gt;β&lt;/mi&gt;&lt;/math&gt;&lt;/span&gt;-Ga&lt;sub&gt;2&lt;/sub&gt;O&lt;sub&gt;3&lt;/sub&gt; exhibit significant increases in &lt;span&gt;&lt;math&gt;&lt;msub&gt;&lt;mrow&gt;&lt;mi&gt;μ&lt;/mi&gt;&lt;/mrow&gt;&lt;mrow&gt;&lt;mi&gt;h&lt;/mi&gt;&lt;/mrow&gt;&lt;/msub&gt;&lt;/math&gt;&lt;/span&gt; along the &lt;span&gt;&lt;math&gt;&lt;mi&gt;y&lt;/mi&gt;&lt;/math&gt;&lt;/span&gt;-axis, reaching 228.7 and 180.7 cm&lt;span&gt;&lt;math&gt;&lt;msup&gt;&lt;mrow&gt;&lt;/mrow&gt;&lt;mrow&gt;&lt;mn&gt;2&lt;/mn&gt;&lt;/mrow&gt;&lt;/msup&gt;&lt;/math&gt;&lt;/span&gt;/(V s), respectively. This provides valuable insights into the enhancement trends of charge carriers in &lt;span&gt;&lt;math&gt;&lt;mi&gt;β&lt;/mi&gt;&lt;/math&gt;&lt;/span&gt;-Ga&lt;sub&gt;2&lt;/sub&gt;O&lt;sub&gt;3&lt;/sub&gt; under high-voltage conditions. At high pressure, &lt;span&gt;&lt;math&gt;&lt;msub&gt;&lt;mrow&gt;&lt;mi&gt;μ&lt;/mi&gt;&lt;/mrow&gt;&lt;mrow&gt;&lt;mi&gt;h&lt;/mi&gt;&lt;/mrow&gt;&lt;/msub&gt;&lt;/math&gt;&lt;/span&gt; along other axes, however, decreases to less than 1 cm&lt;span&gt;&lt;math&gt;&lt;msup&gt;&lt;mrow&gt;&lt;/mrow&gt;&lt;mrow&gt;&lt;mn&gt;2&lt;/mn&gt;&lt;/mrow&gt;&lt;/msup&gt;&lt;/math&gt;&lt;/span&gt;/(V s), demonstrating anisotropic hole transport in &lt;span&gt;&lt;math&gt;&lt;mi&gt;β&lt;/mi&gt;&lt;/math&gt;&lt;/span&gt;-Ga&lt;sub&gt;2&lt;/sub&gt;O&lt;sub&gt;3&lt;/sub&gt;. In comparison, pristine and Mg-doped &lt;span&gt;&lt;math&gt;&lt;mi&gt;α&lt;/mi&gt;&lt;/math&gt;&lt;/span&gt;-Ga&lt;sub&gt;2&lt;/sub&gt;O&lt;sub&gt;3&lt;/sub&gt; has higher &lt;span&gt;&lt;math&gt;&lt;msub&gt;&lt;mrow&gt;&lt;mi&gt;μ&lt;/mi&gt;&lt;/mrow&gt;&lt;mrow&gt;&lt;mi&gt;h&lt;/mi&gt;&lt;/mrow&gt;&lt;/msub&gt;&lt;/math&gt;&lt;/span&gt; than &lt;span&gt;&lt;math&gt;&lt;mi&gt;β&lt;/mi&gt;&lt;/math&gt;&lt;/span&gt;-phase at 0 GPa. Pressure reduces the maximum &lt;span&gt;&lt;math&gt;&lt;msub&gt;&lt;mrow&gt;&lt;mi&gt;μ&lt;/mi&gt;&lt;/mrow&gt;&lt;mrow&gt;&lt;mi&gt;h&lt;/mi&gt;&lt;/mrow&gt;&lt;/msub&gt;&lt;/math&gt;&lt;/span&gt; of &lt;span&gt;&lt;math&gt;&lt;mi&gt;α&lt;/mi&gt;&lt;/math&gt;&lt;/span&gt;-Ga&lt;sub&gt;2&lt;/sub&gt;O&lt;sub&gt;3&lt;/sub&gt; due to the reduce","PeriodicalId":18240,"journal":{"name":"Materials Science in Semiconductor Processing","volume":"199 ","pages":"Article 109781"},"PeriodicalIF":4.2,"publicationDate":"2025-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144518663","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}