Materials Science in Semiconductor Processing最新文献

{"title":"Novel Janus α-Au4XY (X/Y = S, Se, Te) monolayers with ultra-high carrier mobility: A first-principles study","authors":"Nguyen V. Vinh ,&nbsp;Le C. Nhan ,&nbsp;Dang X. Du ,&nbsp;Khang D. Pham","doi":"10.1016/j.mssp.2024.109045","DOIUrl":"10.1016/j.mssp.2024.109045","url":null,"abstract":"<div><div>In this paper, we theoretically propose a series of Janus <span><math><mi>α</mi></math></span>-Au<span><math><msub><mrow></mrow><mrow><mn>4</mn></mrow></msub></math></span>XY (X/Y = S, Se, Te; X <span><math><mo>≠</mo></math></span> Y) monolayers and investigate their structural stability, electronic features, and transport properties based on first-principle calculations. It is indicated that Janus <span><math><mi>α</mi></math></span>-Au<span><math><msub><mrow></mrow><mrow><mn>4</mn></mrow></msub></math></span>XY monolayers have a structurally stable and can be synthesized experimentally. Janus <span><math><mi>α</mi></math></span>-Au<span><math><msub><mrow></mrow><mrow><mn>4</mn></mrow></msub></math></span>XY monolayers exhibit a low Young’s modulus and their mechanical features are slightly anisotropic. At the ground state, Janus <span><math><mi>α</mi></math></span>-Au<span><math><msub><mrow></mrow><mrow><mn>4</mn></mrow></msub></math></span>XY monolayers possess semiconducting characteristics with very steep band dispersions near the conduction band minimum, which is expected to ultra-high electron mobility. The electronic features of Janus <span><math><mi>α</mi></math></span>-Au<span><math><msub><mrow></mrow><mrow><mn>4</mn></mrow></msub></math></span>XY are highly sensitive to the biaxial strains <span><math><msub><mrow><mi>ɛ</mi></mrow><mrow><mi>x</mi><mi>y</mi></mrow></msub></math></span>, particularly the applied compressive biaxial strains. Interestingly, the transitions from the semiconductor to the metal phases are observed in all three configurations of <span><math><mi>α</mi></math></span>-Au<span><math><msub><mrow></mrow><mrow><mn>4</mn></mrow></msub></math></span>XY at <span><math><mrow><msub><mrow><mi>ɛ</mi></mrow><mrow><mi>x</mi><mi>y</mi></mrow></msub><mo>=</mo><mo>−</mo><mn>6</mn><mtext>%</mtext></mrow></math></span>. Janus <span><math><mi>α</mi></math></span>-Au<span><math><msub><mrow></mrow><mrow><mn>4</mn></mrow></msub></math></span>XY monolayers exhibit superior transport characteristics with the electron mobility reaching up to <span><math><mrow><mn>3</mn><mo>.</mo><mn>20</mn><mo>×</mo><mn>1</mn><msup><mrow><mn>0</mn></mrow><mrow><mn>5</mn></mrow></msup></mrow></math></span> cm<span><math><msup><mrow></mrow><mrow><mn>2</mn></mrow></msup></math></span>V⁻¹s⁻¹ (<span><math><mi>α</mi></math></span>-Au<span><math><msub><mrow></mrow><mrow><mn>4</mn></mrow></msub></math></span>SSe monolayer). Our findings not only explore the outstanding electronic and transport features of Janus <span><math><mi>α</mi></math></span>-Au<span><math><msub><mrow></mrow><mrow><mn>4</mn></mrow></msub></math></span>XY nanostructures but also indicate their potential applications in nanoelectronics and nanoelectromechanical devices.</div></div>","PeriodicalId":18240,"journal":{"name":"Materials Science in Semiconductor Processing","volume":"186 ","pages":"Article 109045"},"PeriodicalIF":4.2,"publicationDate":"2024-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142572410","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Challenges and solutions in Mist-CVD of Ga2O3 heteroepitaxial films","authors":"A.V. Vasin ,&nbsp;R. Yatskiv ,&nbsp;O. Černohorský ,&nbsp;N. Bašinová ,&nbsp;J. Grym ,&nbsp;A. Korchovyi ,&nbsp;A.N. Nazarov ,&nbsp;J. Maixner","doi":"10.1016/j.mssp.2024.109063","DOIUrl":"10.1016/j.mssp.2024.109063","url":null,"abstract":"<div><div>Mist chemical vapor deposition (mist-CVD) has recently attracted interest as a facile, cost-effective, environmentally friendly method for the deposition of Ga₂O₃ films. This paper addresses selected challenges and issues that hinder the fabrication of high-quality Ga₂O₃ epitaxial films. Based on numerical simulations of the gas flow we show that the use of a fan, introducing atmospheric air into the horizontal growth reactor, avoids the formation of vortices and mist velocity fluctuations, which develop when a conventional carrier gas delivery system is employed. We also demonstrate that the presence of organic ligands in Ga acetylacetonate results in undesirable contamination of Ga₂O₃ films by pyrolytic carbon, which strongly affects the optical and morphological properties and can lead to incorrect estimation of the optical band gap. Carbon contamination is shown to be reduced by increasing the growth temperature, by growing under oxygen-rich conditions, or by using carbon-free precursors such as GaCl₃. We further experimentally prove that when the thickness of Ga₂O₃ increases, a multiphase epitaxial film forms, presumably due to enhanced thermal stress. Finally, we experimentally show that nonstoichiometric GaO_xCl_yH_z microparticles form on top of a Ga₂O₃ film in the reactor zone, where the aerosol is completely evaporated and a vapor ambient is formed.</div></div>","PeriodicalId":18240,"journal":{"name":"Materials Science in Semiconductor Processing","volume":"186 ","pages":"Article 109063"},"PeriodicalIF":4.2,"publicationDate":"2024-10-31","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142561345","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Synergistic effect of 3D porous tri-metallic MOF based electrode materials for highly stable asymmetric supercapacitors","authors":"Hassan Shabbir ,&nbsp;Hafiz Muhammad Fahad ,&nbsp;Rehana Sharif ,&nbsp;Annam Butt ,&nbsp;Sehar Fatima ,&nbsp;Fozia Shaheen ,&nbsp;Rajan Jose ,&nbsp;Rizwan Wahab ,&nbsp;Veeradasan Perumal ,&nbsp;Samina Akbar ,&nbsp;Sulaiman Al-Sulaimi ,&nbsp;Jin Yang","doi":"10.1016/j.mssp.2024.109036","DOIUrl":"10.1016/j.mssp.2024.109036","url":null,"abstract":"<div><div>Metal-organic frameworks (MOFs) have captured huge consideration owing to their high porosity structure and large surface area for their utilization in supercapacitors. The synthesis parameters play a vital role in the morphological and structural features of MOFs. Herein, a trimetallic metal-organic framework with the morphology of flower-based hierarchical microspheres has been synthesized by solvothermal method with optimization of the reaction duration. The hierarchical structure with connected nanosheets can provide more electroactive sites that lead to exceptional electrochemical performance. NiCoMn-MOF prepared with a reaction time of 48 h (MOF-48) delivers the specific capacitance of 1905 F/g (1 A/g) with rate capability of 71.52 % (10 A/g). Furthermore, MOF-48||Act-C asymmetric supercapacitor displays a remarkable capacitance of 226 F/g (1 A/g) and keeps 97 % of initial capacitance after 15000 continuous cycles. This asymmetric device has a power density of 6945.4 W/kg (10 A/g) and an energy density of 61.52 Wh/kg (1 A/g). Therefore, this study offers an effective technique to improve the electrochemical effectiveness of MOF-based electrodes for high-performance supercapacitors.</div></div>","PeriodicalId":18240,"journal":{"name":"Materials Science in Semiconductor Processing","volume":"186 ","pages":"Article 109036"},"PeriodicalIF":4.2,"publicationDate":"2024-10-31","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142561344","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Processing of gallium oxide crystals using liquid-immersion wire-cut electrical discharge machining","authors":"Zhang Yimiao ,&nbsp;Qiu Mingbo ,&nbsp;Li Hui ,&nbsp;Wang Yingmin ,&nbsp;Li Jingtao ,&nbsp;Liu Zhaowei ,&nbsp;Di Yifan ,&nbsp;Cheng Hongjuan","doi":"10.1016/j.mssp.2024.109049","DOIUrl":"10.1016/j.mssp.2024.109049","url":null,"abstract":"<div><div>To address the issues of cracking and cleavage commonly encountered during conventional mechanical processing of gallium oxide (<span><math><mrow><msub><mtext>Ga</mtext><mn>2</mn></msub><msub><mi>O</mi><mn>3</mn></msub></mrow></math></span>) crystals using several methods, such as outer circle cutting and diamond wire sawing, this study proposed a liquid-immersion wire-cut electrical discharge machining (WEDM) technique. This study also revealed that the segregation phenomena during the growth of <span><math><mrow><msub><mtext>Ga</mtext><mn>2</mn></msub><msub><mi>O</mi><mn>3</mn></msub></mrow></math></span> crystals resulted in non-uniform resistivity within the crystal, leading to the failure of traditional spray-type electro-discharge wire-cutting techniques. To overcome this limitation, the feasibility of the liquid-immersion WEDM technique was proposed, and an experimental platform was established. Resistivity measurements of the cut surfaces of <span><math><mrow><msub><mtext>Ga</mtext><mn>2</mn></msub><msub><mi>O</mi><mn>3</mn></msub></mrow></math></span> in kerosene immersion revealed a reduction of approximately 99.2 % in the resistivity difference. This result shows that the formation of carbon films during processing can effectively compensate for the intrinsic non-uniform resistivity. An equivalent circuit model for liquid-immersion WEDM of <span><math><mrow><msub><mtext>Ga</mtext><mn>2</mn></msub><msub><mi>O</mi><mn>3</mn></msub></mrow></math></span> crystals in kerosene was developed. Thermodynamic and kinetic analyses were conducted on hydrocarbon decomposition reactions in kerosene at discharge temperatures. The results confirmed that decomposition reactions could occur during the discharge process. A truncation experiment for <span><math><mrow><msub><mtext>Ga</mtext><mn>2</mn></msub><msub><mi>O</mi><mn>3</mn></msub></mrow></math></span> ingots was conducted, and a method using single-crystal silicon for electrical assistance in the processing of 1-inch wafers was proposed. The experimental results showed that liquid-immersion WEDM of <span><math><mrow><msub><mtext>Ga</mtext><mn>2</mn></msub><msub><mi>O</mi><mn>3</mn></msub></mrow></math></span> crystals in kerosene effectively suppressed cracking and cleavage, achieving a processing accuracy within 50 μm and successfully producing a 1-inch circular <span><math><mrow><msub><mtext>Ga</mtext><mn>2</mn></msub><msub><mi>O</mi><mn>3</mn></msub></mrow></math></span> wafer, with the machining accuracy improved by approximately 66.6 % compared to diamond wire cutting.</div></div>","PeriodicalId":18240,"journal":{"name":"Materials Science in Semiconductor Processing","volume":"186 ","pages":"Article 109049"},"PeriodicalIF":4.2,"publicationDate":"2024-10-31","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142561343","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Green fabrication of aniline over mesoporous NiS/YVO4 S-type heterostructure photocatalyst under visible light exposure","authors":"Soad Z. Alsheheri ,&nbsp;Tamer M. Khedr","doi":"10.1016/j.mssp.2024.109064","DOIUrl":"10.1016/j.mssp.2024.109064","url":null,"abstract":"<div><div>The photocatalytic hydrogenation of hazardous nitrobenzene (NTB) can efficiently and safely yield aniline (AN), which holds considerable economic significance. The systematic development of superb visible light-proceeded photocatalytic substances that effectively harness the sun spectrum is crucial. In this contribution, mesoporous YVO₄ nanostructured crystals were first assembled employing block copolymer-aided sol-gel protocol and then coupled with NiS nanoparticles (NPs) (4.0–16.0 wt%) through ultrasonic self-growth and calcination to design mesoporous step-type (S-type) NiS/YVO₄ (N/Y) heterostructure photocatalysts. A detailed characterization substantiated powerful interface interaction and effective S-type charge transmission in the designed heterostructured materials. Moreover, optical and photoelectrochemical experiments unveiled superb light harvesting and improved charge separation efficiencies. Thanking the building of the S-type heterostructure, the N/Y heterostructure materials recorded notable photocatalytic proficiency than pristine YVO₄. Specifically, under exposure to visible light for 50 min, the optimal material (12.0 % N/Y) at the best dosage (2.4 g/L) achieved 100 % selective phototransformation of NTB into AN with a rate constant (K) of 0.0696 min⁻¹, superior to pristine YVO₄ (0.0015 min⁻¹) by a factor of 46.4. The 12.0 % N/Y heterostructure also indicated superb cyclic stability, mostly retaining its remarkable efficacy over five consecutive runs. The positive influence of the catalyst content on the NTB photoreduction on 12.0 % N/Y was examined and affirmed by the catalyst dosage alteration. Additionally, based on Mott-Schottky (M − S) measurements, the pathway of charge migration for 12.0 % N/Y heterostructure was suggested. The current contribution offers estimable insights into developing highly effective and stable photocatalytic substances.</div></div>","PeriodicalId":18240,"journal":{"name":"Materials Science in Semiconductor Processing","volume":"186 ","pages":"Article 109064"},"PeriodicalIF":4.2,"publicationDate":"2024-10-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142552575","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Photoassisted decoration of Ag nanoparticles onto TiO2 nanorod arrays for continuously reusable ultrasensitive SERS sensors","authors":"Ton Nu Quynh Trang ,&nbsp;Nguyen Tran Gia Bao ,&nbsp;Vu Thi Hanh Thu","doi":"10.1016/j.mssp.2024.109057","DOIUrl":"10.1016/j.mssp.2024.109057","url":null,"abstract":"<div><div>Herein, a hybrid nanoarray-based surface-enhanced Raman scattering (SERS) sensor was developed to obtain dual functionalities of SERS signal amplification and photocatalytic reusability for detecting trace organic pollutants and antibiotic residues in environmental water. The plasmonic metal was created by controlling the formation of Ag nanoparticles (NPs), which were uniformly anchored within rutile TiO₂ nanoarrays (r-TNRs) to form the Ag@r-TNRs platform. The SERS performance of the Ag@r-TNRs platform was obtained by optimizing photo-induced reduction strategy. Crystal violet (CV) and chloramphenicol (CAP) were chosen to assess the SERS behavior of the Ag@r-TNRs platform. The high sensitivity for detecting trace amounts of target molecules of Ag@r-TNRs hybrid nanostructure experienced both local electromagnetic mechanism (EM) and efficient charge transfer (CT). The prepared substrates exhibited ultralow detection (10⁻¹² M for CV and 10⁻¹¹ M for CAP) and high enhancement factors (EF) in the order of 4.9 × 10⁹ and 5.6 × 10⁸ for CV and CAP, respectively. Furthermore, duplex detection of dyes (CV and CAP) was successfully accomplished using Ag@r-TNRs to estimate SERS applications. Thanks to the excellent photocatalytic properties of TiO₂, the layered structures possessed steady and effective ultraviolet (UV) cleaning performance. After UV irradiation for 40 min, 99 % of the CV were completely decomposed at a UV illumination. This SERS substrate can be reused for many times with a determined recovery rate of 93 %. Accordingly, the bifunctional Ag@r-TNRs substrate shows great potential for SERS analysis and photocatalytic performance in water environmental remediation.</div></div>","PeriodicalId":18240,"journal":{"name":"Materials Science in Semiconductor Processing","volume":"186 ","pages":"Article 109057"},"PeriodicalIF":4.2,"publicationDate":"2024-10-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142552574","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Bio-polymer pectin as morphological modifier for polyaniline: Stability enhancement for energy storage applications","authors":"M.E. Hari Kumar ,&nbsp;M. Sathish Kumar ,&nbsp;Jeng-Yu Lin ,&nbsp;Sudip K. Batabyal","doi":"10.1016/j.mssp.2024.109022","DOIUrl":"10.1016/j.mssp.2024.109022","url":null,"abstract":"<div><div>Bio-polymer pectin has been employed as a morphological modifier and doping agent to develop materials with improved specific properties and functions of polyaniline. Polyaniline (PANi) is an interesting electrode material for electrochemical energy storage due to its inexpensive cost, easy manufacturing, electroactivity, redox characteristics, and suitable capacitance with a major drawback of poor cyclic stability performance. Performance-enhanced polyaniline was synthesized by a simple chemical oxidative method at 5 °C using inexpensive and nontoxic pectin as a stabilizer. For a comparative study process, bare PANi was also synthesized without pectin. As-synthesized bare PANi(B_PANi) and pectin-modified PANi(M_PANi) were analysed by various techniques to understand the chemical bonding nature and interaction between pectin and PANi. Field emission scanning electron microscopy (FESEM) analysis demonstrated the spherical ball-like morphology of M_PANi generated by collective PANi nanorods with high interfacial contact. X-ray photoelectron spectroscopy (XPS) analysis proves the interfacial interaction between pectin and PANi nanorods. Symmetric supercapacitor device fabricated with M_PANi as electrode material with biocompatible KCl gel electrolyte exhibited a maximum of 103.4 mF cm⁻² specific capacitance at a current density of 3 mA cm⁻². The cyclic stability of the device was found to be 58 % over 5000 cycles, whereas B_PANi exhibited only 24.8 % over 2500 cycles. The electrode compatibility was also subsequently examined using an acid-based gel electrolyte, which yielded a substantially superior cyclic stability of 81 % over 5000 cycles. Because of its low cost and ability to attain over 98 % coulombic efficiency with improved cycle stability, M_PANi is an attractive electrode material for next-generation biocompatible low-cost solid-state energy storage applications.</div></div>","PeriodicalId":18240,"journal":{"name":"Materials Science in Semiconductor Processing","volume":"186 ","pages":"Article 109022"},"PeriodicalIF":4.2,"publicationDate":"2024-10-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142537059","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Investigating microstructure and interfacial stability of Bi-enhanced Sn-9Zn alloy on electroplated Cu during aging","authors":"Chan-Ying Lin ,&nbsp;Minho Oh ,&nbsp;Equo Kobayashi ,&nbsp;Chih-Ming Chen ,&nbsp;Yu-An Shen","doi":"10.1016/j.mssp.2024.109046","DOIUrl":"10.1016/j.mssp.2024.109046","url":null,"abstract":"<div><div>This study investigates the impact of Bi addition on the properties and soldering behavior of Sn-9Zn (SZ) and Sn-9Zn-5Bi (SZB) alloys. The inclusion of Bi significantly enhanced the hardness of SZ and reduced its melting temperature from 199 °C to 189 °C, leading to improved soldering performance. Microstructural analysis revealed that SZ/electroplated Cu experienced severe delamination of Cu₅Zn₈ after aging, while SZB/Cu joints remained stable by the small Bi phase, slowing Cu diffusion and stabilized interfacial layers. Thermodynamic calculations highlighted the role of Zn depletion in phase transformation of Cu₅Zn₈ into CuZn phase, exploring the importance of Bi in preventing premature delamination. This research reveals valuable insights into soldering mechanisms for low melting alloys, aiding in the optimization of electronic packaging processes and reliability.</div></div>","PeriodicalId":18240,"journal":{"name":"Materials Science in Semiconductor Processing","volume":"186 ","pages":"Article 109046"},"PeriodicalIF":4.2,"publicationDate":"2024-10-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142537065","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"N and B co-doping to enhance Li adsorption and diffusion properties on silicene/graphene heterostructures: Insights from density functional theory","authors":"Hai-lin Ren ,&nbsp;Yang Su ,&nbsp;Shuai Zhao ,&nbsp;Cheng-wei Li ,&nbsp;Xiao-min Wang ,&nbsp;Bo-han Li","doi":"10.1016/j.mssp.2024.109041","DOIUrl":"10.1016/j.mssp.2024.109041","url":null,"abstract":"<div><div>Due to the structural properties of silicene itself, a substrate material is required to support it in practical use. Graphene is considered to be a good substrate material because of its many excellent properties. However, the heterostructure (Si/G) composed of graphene and silicene is low in stability, and it needs to be improved to enhance its stability. In this work, N and B co-doped graphene and silicene heterostructures (SiB/GN) are constructed with the aim of improving structural stability and obtaining better properties. Calculations show that the SiB/GN heterostructure still belongs to the vdW heterostructure. B doping can disrupt the topologically protected surface quantum states of graphene and silicene, and N doping can further increase the Coulombic attraction between graphene and silicene, thus increasing the binding energy to 22.58 meV Å⁻¹, nearly twice that of Si/G. The density of states results show that the SiB/GN heterostructure is metallic before and after lithium embedding, which ensures good electrical conductivity. Due to the synergistic effect SiB/GN heterostructure exhibits stronger Li adsorption performance (2.36 eV), and lower diffusion barrier (0.229 eV), which is conducive to the inhibition of lithium dendrite formation and the improvement of the battery multiplicity charge/discharge performance.</div></div>","PeriodicalId":18240,"journal":{"name":"Materials Science in Semiconductor Processing","volume":"186 ","pages":"Article 109041"},"PeriodicalIF":4.2,"publicationDate":"2024-10-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142537060","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"High-pressure sputtering deposition and in situ plasma oxidation of TiOx thin films as electron selective contact for photovoltaic applications","authors":"F. Pérez-Zenteno ,&nbsp;E. García-Hemme ,&nbsp;I. Torres ,&nbsp;R. Barrio ,&nbsp;S. Duarte ,&nbsp;R. Benítez-Fernández ,&nbsp;D. Caudevilla ,&nbsp;R. García-Hernansanz ,&nbsp;J. Olea ,&nbsp;D. Pastor ,&nbsp;A. del Prado ,&nbsp;E. San Andrés","doi":"10.1016/j.mssp.2024.109038","DOIUrl":"10.1016/j.mssp.2024.109038","url":null,"abstract":"<div><div>In this article, we show the structural, optical, and electrical characterization of TiO_x deposited by the unconventional technique of High-Pressure Sputtering (HPS). This technique has the potential to reduce the plasma-induced damage of the samples. To fabricate the TiO_x, a 2-step process was used. Firstly, a thin Ti film was deposited in an Ar atmosphere. Secondly, O₂ was introduced into the HPS chamber to create an Ar/O₂ plasma that, along with low temperatures (150 °C or 200 °C), induces the oxidation of the deposited Ti film. With this approach, the Ti film is expected to behave as a capping layer that will reduce the oxidation of the Si substrate. This study aims to obtain a TiO_x layer with low specific contact resistivity (<em>ρ</em>_<em>c</em>) and high minority carrier lifetime. These are crucial characteristics for obtaining high-quality selective contact. It was found that the 2-step process can oxidize the Ti layer. These HPS TiO_x layers show a resistivity in the order of 0.3–10 Ωcm and a ratio Ti/O of ∼1.9. Moreover, the SiO_x regrowth is minimal since this is comparable to the native oxide. This was confirmed by transmission electron microscopy (TEM) and Fourier transform infrared spectroscopy (FTIR). The samples fabricated with a Ti layer (∼4 nm) plus an oxidation temperature of 200 °C (duration of less than 2 h) show a low <em>ρ</em>_<em>c</em> of 0.02 Ωcm², an excellent transmittance (&gt;87 %) in the visible region and an optical bandgap of 2.8 eV. These TiO_x layers are amorphous, although some anatase phase crystalline clusters appear for the 200 °C processes. However, the minority carrier lifetime results of Si passivated by TiO_x were inadequate for fabricating efficient solar cells. We also found that using the RCA oxide improved lifetime. This indicates that introducing alternative low-temperature passivating layers can solve this issue.</div></div>","PeriodicalId":18240,"journal":{"name":"Materials Science in Semiconductor Processing","volume":"186 ","pages":"Article 109038"},"PeriodicalIF":4.2,"publicationDate":"2024-10-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142537165","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}