Materials Science in Semiconductor Processing最新文献

{"title":"Flexible organic semiconductor switching enabled by the magnetoresistance effect","authors":"Amos Bardea ,&nbsp;Fernando Patolsky ,&nbsp;Roshlin Kiruba ,&nbsp;Igor Lapsker ,&nbsp;Paul Ben Ishai","doi":"10.1016/j.mssp.2025.109610","DOIUrl":"10.1016/j.mssp.2025.109610","url":null,"abstract":"<div><div>Recent advancements in material sciences have placed significant emphasis on the development of materials with smart properties and functionalities, that can be controlled or adjusted by external stimuli. We present a study of polydimethylsiloxane/polypyrrole/Ni nanoparticle composites as testbeds for Organic Magnetoresistance (OMAR) application. The magnetoresistance sensitivity, (ΔR/R₀), of flexible organic composites at room temperature typically falls below one, for millitesla-scale magnetic fields. Our experiments demonstrate that the fabricated films exhibit a notable magnetoresistance effect, with relative electrical resistance changes of 5.2, under a weak magnetic field of 10⁻² T under ambient conditions. We show that these composite films are flexible, conductive, and exhibit heighted OMAR capabilities, with switching rates stable up to 5 kHz. The magnetic permeability of the samples is investigated using a bespoke time-domain magnetic spectrometer, revealing enhanced diamagnetic behavior. This underpins the magnetic resistance of the composite, because of spin injection and consequent interaction with the magnetic field. This study introduces the first example of a single flexible film structure capable of detecting weak magnetic fields, as low as 10⁻² T at room temperature, surpassing previously reported MR values below one in the literature. These promising organomagnetic self-standing films hold significant potential for various future applications, including magnetic switches, sensors, e-skin devices, transistors, and organic spintronic devices.</div></div>","PeriodicalId":18240,"journal":{"name":"Materials Science in Semiconductor Processing","volume":"195 ","pages":"Article 109610"},"PeriodicalIF":4.2,"publicationDate":"2025-05-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143899625","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Atomic layer deposition of Ru/rutile Al-TiO2/Ru layer stacks for high-performance silicon capacitors","authors":"Taehyun Kim ,&nbsp;Da Eun Lim ,&nbsp;Hyeongjun Kim ,&nbsp;Hyunmin Nah ,&nbsp;Heun Park ,&nbsp;Yoon Jang Chung ,&nbsp;Woongkyu Lee","doi":"10.1016/j.mssp.2025.109646","DOIUrl":"10.1016/j.mssp.2025.109646","url":null,"abstract":"<div><div>We investigate the fabrication of high-performance silicon capacitors using atomic layer deposition (ALD) by growing metal/insulator/metal thin film layer stacks on silicon substrates. The ALD characteristics of high-quality Ru and TiO₂ films are presented, as well as corresponding electronic data for the individual films. In an optimized capacitor structure, we concurrently observe a large capacitance of 29 nF/mm², a low leakage current of 1 nA/cm², and a high breakdown voltage of 4.8 V. This was achieved by optimizing the top electrode structure and implementing Al doping in the TiO₂ insulator film. Our results highlight the potential of ALD-grown layer stack structures for high-performance silicon capacitors, which can be utilized in a wide range of applications that span power electronics to advanced memory devices.</div></div>","PeriodicalId":18240,"journal":{"name":"Materials Science in Semiconductor Processing","volume":"195 ","pages":"Article 109646"},"PeriodicalIF":4.2,"publicationDate":"2025-05-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143902285","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Enhanced resistive switching characteristics in p/CuO-n/ZnO bilayer structure memory cells","authors":"Xiang Luo,&nbsp;Ping He,&nbsp;Jiahao Zhang,&nbsp;Honglong Zheng,&nbsp;Xianpei Ren,&nbsp;Fang Ling,&nbsp;JianBo Yang,&nbsp;Yuanping Liu,&nbsp;Rui Wen,&nbsp;Qiang Li","doi":"10.1016/j.mssp.2025.109624","DOIUrl":"10.1016/j.mssp.2025.109624","url":null,"abstract":"<div><div>In this paper, the resistive switching characteristics and underlying mechanisms of bilayer p/CuO-n/ZnO device are comprehensively investigated. Owing to the presence of p-n junction, the current-voltage (I-V) curve of the bilayer CuO-ZnO device exhibits asymmetric characteristics. To elucidate the internal resistive switching mechanisms, a dual model incorporating p-n junction interfacial effects and oxygen-vacancy-filamentary conduction is proposed. Compared with the single layer ZnO device, the bilayer CuO-ZnO device exhibits enhanced retention and endurance performances. This improvement is attributed to the built-in electric field at the p-n junction, which stabilizes charge carrier dynamics, and the ordered migration of oxygen vacancies at the interface, which suppresses the random formation of conductive filaments. Furthermore, the I-V curve of bilayer CuO-ZnO device exhibits a remarkable photoelectric response under ultraviolet (UV, 365 nm) illumination. This finding offers a valuable reference for optically controlled resistive switching behavior of ZnO based memory cells, thereby potentially contributing to the development of the related optoelectronic applications.</div></div>","PeriodicalId":18240,"journal":{"name":"Materials Science in Semiconductor Processing","volume":"195 ","pages":"Article 109624"},"PeriodicalIF":4.2,"publicationDate":"2025-05-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143902365","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Role of strontium and associated particle enrichment in Si purification using Al-Si-Sr solvent refining","authors":"Chen Chen ,&nbsp;Boyuan Ban ,&nbsp;Jingwei Li ,&nbsp;Yinhe Lin ,&nbsp;Jian Chen","doi":"10.1016/j.mssp.2025.109620","DOIUrl":"10.1016/j.mssp.2025.109620","url":null,"abstract":"<div><div>This study provides a comprehensive investigation into the occurrence forms of Sr and its effect on Si purification during Al-30 wt%Si solvent refining, with varying Sr additions. The microstructure of the Al-Si alloy, the impurity content of purified Si, and the precipitation of impurity phases were analyzed using scanning electron microscopy (SEM) and electron probe microanalysis (EPMA), inductively coupled plasma optical emission spectrometry (ICP-OES), and supported by thermodynamic calculations, respectively. Microstructural analysis revealed that Sr modification induced notable morphological changes in the Si phase. The Sr in purified Si is categorized into three distinct forms: (i) Sr atoms that induce Si modification, (ii) Sr atoms dissolved within the Si crystals, and (iii) the P-containing Al₂Si₂Sr (major). Excessive Sr addition facilitated the significant precipitation of P-rich Al₂Si₂Sr phases at the solidification front of primary Si. These Al₂Si₂Sr phases not only reduced the P content (Sr ≥ 8000 ppmw, η_P ≥ 87.3 %) in the melt but also interacted with the growing Si crystals at the interface. The high consumption of P in the melt ensures that purified Si can achieve a high P removal efficiency at a rapid cooling rate. Although leaching treatment removed the Al₂Si₂Sr phases, residual Sr atoms, either dissolved within the Si matrix or incorporated into the Si crystal structure through modifying effects, were largely resistant to removal by such processes. This study provides an alternative perspective for the impurity control of purified Si via Al–Si-Sr solvent refining to produce solar-grade Si (SoG-Si).</div></div>","PeriodicalId":18240,"journal":{"name":"Materials Science in Semiconductor Processing","volume":"195 ","pages":"Article 109620"},"PeriodicalIF":4.2,"publicationDate":"2025-05-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143902366","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Modulating the structural framework with electron-withdrawing groups and studying their effects on charge mobility in a new series of D-A-D based organic semiconductors","authors":"Farhina Abid ,&nbsp;Sagar Sharma ,&nbsp;Basanta Kumar Rajbongshi","doi":"10.1016/j.mssp.2025.109534","DOIUrl":"10.1016/j.mssp.2025.109534","url":null,"abstract":"<div><div>A systematic computational study was conducted on a new series of donor-acceptor-donor (D-A-D) architecture molecules, featuring bithiazolimide as the acceptor (A) and thiophene as the donor (D), to evaluate the effect of electron-withdrawing substituents on their charge mobility. Density functional theory (DFT) and time-dependent DFT were used to analyze HOMO/LUMO stability, electron affinity (EA), ionization potential (IP), reorganization energy (λ), charge mobility (μ), absorption spectra, and density of states (DOS), revealing the impact of steric and electronic properties on charge transport in the D-A-D framework. The observed trend of variation of the ionization potential and electron affinity suggests increasing charge transfer behaviour with increasing substitution constant. The study reveals that electron mobility is directly proportional to the strength of the electron-withdrawing substituent. Molecules containing -F, -Cl, -CSCH_3, -COCH₃ and -CF₃ exhibited higher electron mobility pointing towards their dominating n-type character, whereas molecules containing -CN and -NO₂ showed balanced electron and hole mobilities, suggesting an ambipolar nature. In contrast molecule <strong>4</strong>, with a -CSCH₃ substituent, demonstrates the highest electron mobility and the smallest HOMO-LUMO gap, making it particularly promising for n-type organic semiconductor applications. The high electron mobility of molecule <strong>4</strong> is further supported by non-covalent interaction (NCI) analysis, which shows S⋯S interactions within the thiophene ring and electron-withdrawing substituents present in the donor moiety. Further, electrostatic potential (ESP) and transition density matrix (TDM) analyses support effective charge separation within these molecules, suggesting an optimized D-A-D system with strong electron-withdrawing substituents and minimal steric hindrance. These findings highlight the potential of these systems in developing high-mobility n-type organic semiconductors, contributing valuable insights for advancing organic electronic devices.</div></div>","PeriodicalId":18240,"journal":{"name":"Materials Science in Semiconductor Processing","volume":"195 ","pages":"Article 109534"},"PeriodicalIF":4.2,"publicationDate":"2025-05-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143894396","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Ultra-low temperature ozone annealing for decreasing sub-threshold swing of oxide thin film transistors","authors":"Qi-Zhen Chen ,&nbsp;Jia-Hao Yan ,&nbsp;Wan-Qiang Fu ,&nbsp;Ming-Jie Zhao ,&nbsp;Yun-Shao Cho ,&nbsp;Chien-Jung Huang ,&nbsp;Shui-Yang Lien","doi":"10.1016/j.mssp.2025.109623","DOIUrl":"10.1016/j.mssp.2025.109623","url":null,"abstract":"<div><div>An effective approach is presented in this study to reducing the sub-threshold swing (SS) of indium gallium zinc oxide thin film transistors (IGZO-TFTs) through ultra-low temperature ozone (O₃) annealing. The O₃-annealed temperature is varied to systematically investigate its impact on electrical properties of IGZO thin films and IGZO-TFT compared with as-deposited IGZO thin films and devices. The results reveal a notable decrease in oxygen vacancy concentration in the O₃-annealed films. Meanwhile, the density of the interface trap state (N_t) is decreased and shows an inverse correlation with increasing O₃-annealed temperature. When the IGZO-TFT O₃-annealed at 75 °C, it exhibits satisfactory electrical properties, with a SS decreased into 140 mV/decade, a saturation mobility (μ_sat) is maintained at 4.2 cm²/V·s, a threshold voltage (V_th) of 0.7 V and an I_on/I_off of 8.6 × 10⁸. Finally, the high-power impulse magnetron sputtering (HiPIMS) IGZO-TFT through ultra-low temperature O₃ annealing at 75 °C for only 180 s, exhibits a low SS. This study provides favorable conditions for the application of IGZO-TFTs that demand ultra-fast response, especially under low-temperature conditions.</div></div>","PeriodicalId":18240,"journal":{"name":"Materials Science in Semiconductor Processing","volume":"195 ","pages":"Article 109623"},"PeriodicalIF":4.2,"publicationDate":"2025-05-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143894394","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Optical properties of carbon nitride thin films fabricated by rapid chemical vapor deposition","authors":"Eugene Chubenko,&nbsp;Sergey Maximov,&nbsp;Cong Doan Bui,&nbsp;Victor Borisenko","doi":"10.1016/j.mssp.2025.109617","DOIUrl":"10.1016/j.mssp.2025.109617","url":null,"abstract":"<div><div>Developed rapid chemical vapor deposition lasting only 3 min allowed to produce smooth layered carbon nitride polycrystalline thin films as thick as 830–1547 nm at 550–625 °C in air with crystallites in the layers oriented parallel to the substrate (glass or silicon) surface. They are distinguished by high transparency in the visible range and the thickness uniformity. It made possible an adequate optical transmission and absorption spectra measurements at room temperature and their correct processing with the Swanepoel's envelope method to determine optical properties of the films and compare them with characteristics of carbon nitride materials obtained by conventional chemical vapor deposition or thermal polymerization. The application of the Swanepoel's method allowed to determine actual thickness of the films and then the refraction index of the material to be 2.50–3.25 and the extinction coefficient to be 0.1–0.4 as functions of the deposition temperature. The average photoluminescence lifetime of the deposited material is found to be 2.3–2.6 ns for high energy carrier recombination processes being the shortest in the sample fabricated at 550 °C and correlating with crystallinity of the film. Optimal temperature for rapid chemical vapor deposition of carbon nitride thin films is concluded to be in the range of 550–575 °C providing its best properties promising for electronic and optoelectronic applications.</div></div>","PeriodicalId":18240,"journal":{"name":"Materials Science in Semiconductor Processing","volume":"195 ","pages":"Article 109617"},"PeriodicalIF":4.2,"publicationDate":"2025-05-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143894395","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Sulfur vacancy engineering mediated preparation of ZnIn2S4 photocatalyst to boost photocatalytic degradation of atrazine","authors":"Zhuolin Bu,&nbsp;Meng Wang,&nbsp;Zinian Wang,&nbsp;Xiangdong Chen,&nbsp;Zhonghui Fu,&nbsp;Yiping Deng","doi":"10.1016/j.mssp.2025.109628","DOIUrl":"10.1016/j.mssp.2025.109628","url":null,"abstract":"<div><div>Vacancy engineering has emerged as a pivotal strategy in the advancement of photocatalysts, attracting extensive attention due to its remarkable potential for realizing highly efficient photocatalytic performance. In this work, the sulfur vacancy modified petal-shaped ZnIn₂S₄ (Sv-ZIS) photocatalyst was synthesized through a simple hydrothermal approach, which was further used to photo catalytically degrade atrazine (ATZ) upon visible light. The results indicated that the synthesized Sv-ZIS achieved a maximum ATZ degradation efficiency of 82.5 %, which surpasses that of unaltered ZIS by 2.72 times. This enhancement resulted from the introduction of sulfur vacancy broadened the light absorption and accelerated the separation of charges and transfer, together with enhanced surface area of ZIS. By combining density functional theory (DFT) calculations and liquid chromatography mass spectrometry (LC-MS) measurements, the ATZ degradation pathway over Sv-ZIS was deduced. Furthermore, toxicity assessment software tools were used to evaluate the toxicity of photodegradation intermediates. This work was facilitated to designed the Sv-ZIS based photocatalyst for the efficient degradation of the agricultural waste water containing ATZ.</div></div>","PeriodicalId":18240,"journal":{"name":"Materials Science in Semiconductor Processing","volume":"195 ","pages":"Article 109628"},"PeriodicalIF":4.2,"publicationDate":"2025-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143894392","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Tunable coercive voltage and polarization of HZO through field-induced phase transitions","authors":"Changhyeon Han ,&nbsp;Been Kwak ,&nbsp;Ki-Ryun Kwon ,&nbsp;Soi Jeong ,&nbsp;Jeong-Han Kim ,&nbsp;Rino Choi ,&nbsp;Daewoong kwon","doi":"10.1016/j.mssp.2025.109615","DOIUrl":"10.1016/j.mssp.2025.109615","url":null,"abstract":"<div><div>We explore the tunable ferroelectric properties of Hf_xZr_1-xO₂ (HZO), particularly focusing on coercive voltage (V_C) and remnant polarization (P_r) through controlled cycling voltage. The findings reveal a crucial relationship between the ferroelectric properties and the proportion of the ferroelectric phase. The interaction between the ferroelectric and non-ferroelectric phases played a significant role in shaping the overall ferroelectric behavior. By leveraging the field-induced phase transitions, HZO properties could be finely tuned, which provides key insights for applications requiring low operating voltages and optimized polarization switching. These results pave the way for the development of high-performance and reliable ferroelectric devices.</div></div>","PeriodicalId":18240,"journal":{"name":"Materials Science in Semiconductor Processing","volume":"195 ","pages":"Article 109615"},"PeriodicalIF":4.2,"publicationDate":"2025-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143894390","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"In-situ fabrication of Bi2O3/g-C3N4/sepiolite photocatalyst for tetracycline degradation under visible light: Performance, mechanism and degradation pathways","authors":"Runze Song ,&nbsp;Xiaolong Hu ,&nbsp;Guicong Hu ,&nbsp;Zhaoyun Li ,&nbsp;Deqin Meng ,&nbsp;Ziqi Cheng ,&nbsp;Dengzheng Gao ,&nbsp;Qingbin Guo ,&nbsp;Li Wang","doi":"10.1016/j.mssp.2025.109626","DOIUrl":"10.1016/j.mssp.2025.109626","url":null,"abstract":"<div><div>In this study, the ternary Bi₂O₃/g-C₃N₄/sepiolite composite with excellent photocatalytic activity was prepared via hydrolysis precipitation and calcination procedure. The Bi₂O₃/g-C₃N₄/sepiolite photocatalyst performed dramatically improved visible-light-driven photodegradation efficiency for tetracycline (TC) within 3 h (91.71 %), which was almost 2.24, 6.5, 1.28, 1.36 1.76 times that those of Bi₂O₃, g-C₃N₄, g-C₃N₄/sepiolite, Bi₂O₃/sepiolite and Bi₂O₃/g-C₃N₄, respectively. The results demonstrated that there was a synergistic effect among the components of the ternary composite, which effectively promoted the separation and transfer of photoinduced electron-hole pairs. The role of sepiolite was particularly important as a carrier of Bi₂O₃/g-C₃N₄ heterojunction, providing more reaction active sites and better electron transport path. The quenching experiment showed that O₂^•- were the main active species during TC degradation process. Furthermore, the photocatalytic degradation mechanisms and possible degradation pathways of TC were also investigated. This work provides new ideas for the mineral-based ternary photocatalytic composites to degrade pollutants in wastewater.</div></div>","PeriodicalId":18240,"journal":{"name":"Materials Science in Semiconductor Processing","volume":"195 ","pages":"Article 109626"},"PeriodicalIF":4.2,"publicationDate":"2025-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143894391","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}