Materials Science in Semiconductor Processing最新文献

{"title":"Recent advances of carbon dots for the detection and removal of water contaminants","authors":"Hui Li ,&nbsp;Xicheng Li ,&nbsp;Shuyan Wei ,&nbsp;Changzheng Wang ,&nbsp;Yang Zhang","doi":"10.1016/j.mssp.2025.109424","DOIUrl":"10.1016/j.mssp.2025.109424","url":null,"abstract":"<div><div>Water pollution poses an increasing global threat to the environment and sustainable development of human society. The development of novel materials and technologies hold the promise for highly efficient detection and treatment of water contaminants from various industries that playing an essential role in both social and economic benefits. Recently, carbon dots (CDs) emerge as a novel type of low-dimensional carbon nanomaterials with the advantages of high photo/thermal stability, negligible photobleaching, excellent biocompatibility and low environmental toxicity, holding immense potential for toxic-element determination and pollution control in aquatic environments. In this review, we aim to summarize the recent progress in the design and synthesis of CDs-based nanomaterials and nanocomposites, and highlight their applications in the detection and treatment of water contaminants. Furthermore, the potential and problems of CDs-based nanocomposites are discussed with the aim to achieve fruitful results in the high-sensitive detection and high-efficiency removal of water contaminants from different sources.</div></div>","PeriodicalId":18240,"journal":{"name":"Materials Science in Semiconductor Processing","volume":"192 ","pages":"Article 109424"},"PeriodicalIF":4.2,"publicationDate":"2025-03-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143580137","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Effect of moisture on the properties of hafnium zirconium oxide ferroelectric thin films","authors":"Fan Wu ,&nbsp;Jianguo Li ,&nbsp;Zeping Weng ,&nbsp;Junliang Zhou ,&nbsp;Lijian Chen ,&nbsp;Haomin Sun ,&nbsp;Danben He ,&nbsp;Daolin Cai ,&nbsp;Yi Zhao","doi":"10.1016/j.mssp.2025.109439","DOIUrl":"10.1016/j.mssp.2025.109439","url":null,"abstract":"<div><div>The degradation mechanisms of polarization and dielectric properties in hafnium zirconium oxide (HZO) ferroelectric thin films under humid conditions are systematically investigated. X-ray photoelectron spectroscopy (XPS) analysis confirms that moisture-induced degradation is attributed to the hydrolysis of zirconia (ZrO₂) into zirconium hydroxide (Zr(OH)₄) within the HZO thin films, resulting in measurable reductions in both remnant polarization and dielectric constant. Notably, the deteriorated ferroelectric performance is demonstrated to be effectively recovered through thermal annealing, during which Zr(OH)₄ is thermally decomposed into ZrO₂ and H₂O. These findings experimentally validate the critical role of environmental moisture in governing the functional stability of HZO-based devices, while establishing a reversible recovery mechanism that significantly improves the fundamental understanding of material reliability in humidity-sensitive applications.</div></div>","PeriodicalId":18240,"journal":{"name":"Materials Science in Semiconductor Processing","volume":"192 ","pages":"Article 109439"},"PeriodicalIF":4.2,"publicationDate":"2025-03-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143580140","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Thermoluminescence response and kinetic parameters of Tb-doped GdCa4O(BO3)3 under beta irradiation","authors":"Y. Alajlani ,&nbsp;K. Bulcar ,&nbsp;M. Oglakci ,&nbsp;U.H. Kaynar ,&nbsp;Y. Tuncer Arslanlar ,&nbsp;M. Topaksu ,&nbsp;V. Correcher ,&nbsp;N. Can","doi":"10.1016/j.mssp.2025.109449","DOIUrl":"10.1016/j.mssp.2025.109449","url":null,"abstract":"<div><div>In this study, the thermoluminescence (TL) properties of Tb³⁺-doped GdCa₄O(BO₃)₃ (GdCOB) are investigated with focus on the effects of optical filter selection, preheating, dopant concentration, irradiation dose, heating rate on these properties. Trapping parameters of the traps responsible for the peaks in the phosphor were also determined. The IRSL-TL-565 nm filter was identified as optimal filter for isolating the characteristic green emission of Tb³⁺ and improving the signal-to-noise ratio. Among the studied dopant concentrations (1, 2, 3, 5, and 7 wt%), 3 wt% Tb³⁺ was found to maximize TL intensity. Beyond this concentration, quenching effects became dominant, leading to reduced TL efficiency. At 3 wt% doping, TL glow peaks were observed at approximately 80 and 190 °C following a 50 Gy beta dose with a heating rate of 2 °C/s, with the primary peak (∼190 °C) favorable for minimizing thermal fading. The TL response of the primary peak was linear with dose within 5–500 Gy. The peak's TL intensity is affected by thermal quenching effects. Reusing of an aliquot of the phosphor ten times produced responses with 0.45 % maximum deviation from their mean. Additionally, the peak temperature (T_m) exhibited a slight decrease beyond 100 Gy, which can be attributed to charge carrier interactions, trap filling effects, and potential thermal quenching at higher doses. Heating rate experiments showed the expected shift of peak temperatures to higher values, emphasizing the need to correct for temperature lag in kinetic analyses. Computerized glow curve deconvolution (CGCD) indicated the presence of at least eight distinct trapping levels with activation energies ranging from 0.90 to 1.69 eV, revealing a complex trap structure. Overall, with its high TL intensity, linear dose response, and aliquot reusability, Tb³⁺-doped GdCOB is a promising phosphor for personal dosimetry, environmental radiation monitoring, and medical imaging.</div></div>","PeriodicalId":18240,"journal":{"name":"Materials Science in Semiconductor Processing","volume":"192 ","pages":"Article 109449"},"PeriodicalIF":4.2,"publicationDate":"2025-03-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143580139","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Comprehensive analysis of the synthesis and characterizations of Cr-substituted Cd-Cu ferrite: Insights from Mössbauer and impedance spectroscopy","authors":"R.E. El Shater ,&nbsp;A.W. Awad ,&nbsp;H.H. El-Bahnasawy ,&nbsp;T.M. Meaz ,&nbsp;E.H. El-Ghazzawy","doi":"10.1016/j.mssp.2025.109451","DOIUrl":"10.1016/j.mssp.2025.109451","url":null,"abstract":"<div><div>This work explores the influence of chromium ion substitution on the dielectric characteristics of Cd_0.5Cu_0.5Cr_xFe_2-xO₄ magnetic ferrite prepared by the coprecipitation method and sintered at 1000 °C. X-ray diffraction (XRD) and Rietveld refinement analysis ensured the purity and crystallinity of the formed spinel structure. The ionic radius of cations affects the cation distribution, particularly the occupation of large cadmium ions at the tetrahedral sites. The lattice parameter, oxygen position parameter, and bond length decrease by adding Cr³⁺ ions, while the vibrational frequency and force constant increase. This leads to the <strong>reinforcement of interatomic bonds and increases the elastic moduli and Debye temperature.</strong> Therefore, chromium-doped ferrites are relatively rigid compared to the others. Mössbauer spectroscopy detected the hyperfine magnetic parameters, including isomer shift (I_S), quadrupole splitting (Qs), magnetic field strength, and the relative area between tetrahedral and octahedral sites. The two well-defined sextets represent the ferromagnetic behavior of the samples x = 0.1, 0.2, and 0.4, while the sample Cr 0.8 exhibits a doublet type, demonstrating superparamagnetic behavior. All the dielectric parameters decrease by adding Cr ions. Impedance spectroscopy provides valuable information about the resistances and capacitances of the grain and grain boundaries. The equivalent circuit of the samples consists of two series RC parallel circuits according to the semicircles obtained from the Nyquist plot. The calculated activation energy and relaxation time further explain the nature of charge carriers' movement within the material. These findings indicate that these samples are good candidates in advanced electronic and magnetic devices and high-frequency applications.</div></div>","PeriodicalId":18240,"journal":{"name":"Materials Science in Semiconductor Processing","volume":"192 ","pages":"Article 109451"},"PeriodicalIF":4.2,"publicationDate":"2025-03-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143561658","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Performance of LIF neuron circuit based on threshold switching memristors","authors":"Le An ,&nbsp;Ting Jiang ,&nbsp;Huaxian Liang ,&nbsp;Yu Wang ,&nbsp;Yichuan Zhang ,&nbsp;Fanlin Long ,&nbsp;Ningyang Liu ,&nbsp;Zhaohui Zeng ,&nbsp;Baolin Zhang","doi":"10.1016/j.mssp.2025.109428","DOIUrl":"10.1016/j.mssp.2025.109428","url":null,"abstract":"<div><div>Building physical systems that mimic biological functions is crucial for enhancing the efficiency and scalability of neuromorphic computing. The Leaky Integrate-and-Fire (LIF) neuron model has gained attention owing to its simple architecture, low power consumption, high temporal resolution, and real-time processing. In this study, the spiking behaviors of LIF neuron circuits based on two types of threshold switching memristor devices (TSM)—Pt/Al₂O₃/HfO₂/Ag (5 nm)/Pt and Pt/Al₂O₃/HfO₂/Ag-NIs(5 nm)/Pt—were systematically investigated and compared under various voltage inputs and circuit elements. Simulations were also performed to explain the patterns of spiking behaviors observed in the experiments. The LIF neuron circuit based on the TSM device embedded with Ag nano-islands (Ag-NIs) demonstrates unique spike response characteristics in contrast to those without Ag-NIs. Specifically, the spike amplitude increases with increasing input voltage amplitude while the output spike frequency remains stable. This study highlights the significant influence of TSM materials on the performance of LIF neuron circuits and paves the way for the design of more efficient and reliable neuromorphic computing architectures.</div></div>","PeriodicalId":18240,"journal":{"name":"Materials Science in Semiconductor Processing","volume":"192 ","pages":"Article 109428"},"PeriodicalIF":4.2,"publicationDate":"2025-03-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143548183","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Bottom electrode reactivity and bonding strength effect on resistive switching in HfO2-based RRAM","authors":"Sungwoo Jung ,&nbsp;Kyeong-Bae Lee ,&nbsp;Moonsoo Kim ,&nbsp;Junehyeong Cho ,&nbsp;Sungsoo Park ,&nbsp;Hwan-gyu Lee ,&nbsp;Junho Noh ,&nbsp;Byoungdeog Choi","doi":"10.1016/j.mssp.2025.109438","DOIUrl":"10.1016/j.mssp.2025.109438","url":null,"abstract":"<div><div>This study examined the electrode surface reactivity to investigate the influence of metal types on the switching operation of HfO₂-based resistive random-access memory (RRAM) devices. The devices were fabricated by three different bottom electrode (BE) materials: indium tin oxide (ITO), heavily doped silicon (P⁺-Si), silver (Ag), and their electrical performance was analyzed experimentally. Specifically, an operational mechanism for RRAM is proposed that is based on the differences in SET voltage (V_SET) and resistivity ratio (R_HRS/R_LRS) between ITO and P⁺-Si BE samples, which have similar work functions. The V_SET of ITO BE and P⁺-Si BE samples were measured at (0.93 and 1.74) V, respectively, with R_HRS/R_LRS values of (17.6 and 5.33), clearly indicating performance differences between the electrodes. Additionally, the ITO BE sample exhibited more pronounced variability and endurance characteristic degradation compared to the P⁺-Si. These findings demonstrate a significant difference in operational stability between the two materials. The results suggest that electrode material reactivity and bonding strength impact the ease of conducting filament formation and operational stability at the electrode surface. This study highlights the influence of electrode-specific properties on RRAM performance and commercial viability, underscoring the importance of future RRAM development of electrode material selection.</div></div>","PeriodicalId":18240,"journal":{"name":"Materials Science in Semiconductor Processing","volume":"192 ","pages":"Article 109438"},"PeriodicalIF":4.2,"publicationDate":"2025-03-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143548186","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Homogeneous ZrO2 gate dielectrics with intermediate ozone oxidation for improved interface stability and leakage suppression in Ge-based MOS devices","authors":"Jongwon Lee ,&nbsp;Hwayong Choi ,&nbsp;Junseok Heo","doi":"10.1016/j.mssp.2025.109435","DOIUrl":"10.1016/j.mssp.2025.109435","url":null,"abstract":"<div><div>With recent advances in semiconductor technology, Ge has gained significant attention as a high-mobility channel material. However, integrating Ge with high-k dielectrics remains challenging owing to the formation of unstable Ge suboxides at the interface, which degrade the device performance by increasing the interface trap density and leakage current. This study explores the use of a ZrO₂ interlayer, replacing Al₂O₃, followed by ozone post-oxidation (OPO) and an additional ZrO₂ deposition to create a homogeneous ZrO₂ gate dielectric on Ge. The resulting ZrO₂/OPO/ZrO₂ structure effectively suppresses the formation of unstable Ge suboxides, blocks Ge diffusion, and reduces the number of polycrystalline ZrO₂ phases. These advantages have been confirmed through extensive material studies including high-resolution transmission electron microscopy, X-ray photoelectron spectroscopy, and X-ray diffraction. The electrical characteristics were examined using capacitance-voltage and current density-voltage measurements. Moreover, the leakage current behavior was further analyzed using current conduction mechanism models. The ZrO₂/OPO/ZrO₂ stack exhibits a low equivalent oxide thickness (EOT) of 1.87 nm, an interface trap density (D_it) of 2.48 × 10¹² cm⁻¹ev⁻¹, and a reduced leakage current density of 7.05 × 10⁻⁷ A/cm² at 1 V. This study highlights the possibility of the ZrO₂/OPO/ZrO₂ stack as a high-performance gate dielectric for next-generation Ge-based MOS devices.</div></div>","PeriodicalId":18240,"journal":{"name":"Materials Science in Semiconductor Processing","volume":"192 ","pages":""},"PeriodicalIF":4.2,"publicationDate":"2025-03-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143548189","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"The reduction of laser-damage on the rear surface of the N-type TOPCon solar cells with electroplating electrodes","authors":"Zhipeng Liu ,&nbsp;Meixian Huang ,&nbsp;Jianbo Shao ,&nbsp;Chengming Song ,&nbsp;Yusen Qin ,&nbsp;Song Zhang ,&nbsp;Qiqi Wang ,&nbsp;Meilin Peng ,&nbsp;Meiling Zhang ,&nbsp;Guilin Liu ,&nbsp;Xi Xi ,&nbsp;Jingjia Ji","doi":"10.1016/j.mssp.2025.109433","DOIUrl":"10.1016/j.mssp.2025.109433","url":null,"abstract":"<div><div>The shortcomings of traditional screen-printed technology in PV industry have rendered it inadequate for the demands of high power conversion efficiency solar cell design, including the low contact performance and the high shading area. Combinating laser ablation pretreatment and Ni/Cu plating can circumvent these issues. However, laser-induced damage significantly influences the further enhancement of power conversion efficiency of the solar cells with electroplating electrodes. In this paper, a simplified physical model of laser ablation on the rear surface dielectric layer for N-type tunnel oxide passivated contacts(TOPCon) solar cells was presented. According to model, the approximate calculation of the laser ablation power was between 0.2 W and 1.6 W, when a 355 nm ps Gaussian pulsed laser was employed on the rear surface of N-type TOPCon solar cells. Subsequently, the optimal laser ablation process parameters for the electroplating process on the rear surface of the wafer were identified through experiments. By modifying the laser ablation process, as far as possible to reduce the damage to the polycrystalline silicon passivation layer caused by the laser on the rear surface of the TOPCon solar cells. Following the modification of the laser ablation procedure, the laser-induced damage was also rectified through high-temperature annealing. Ultimately, a photoelectric conversion efficiency of 24.36 % was attained in the N-type electroplating TOPCon solar cells, representing an enhancement of 0.86%_abs in comparison to that of the TOPCon solar cells with electrodes fabricated by screen-printed on the rear surface.</div></div>","PeriodicalId":18240,"journal":{"name":"Materials Science in Semiconductor Processing","volume":"192 ","pages":"Article 109433"},"PeriodicalIF":4.2,"publicationDate":"2025-03-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143548187","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Solution-processed 3D/3D bilayer perovskite heterojunction solar cells","authors":"Hongyu Li,&nbsp;Xu Chen,&nbsp;Haijin Li,&nbsp;Huiyao Zhao,&nbsp;Jiashun Li,&nbsp;Tianhe Dong,&nbsp;Wenfeng Zhang","doi":"10.1016/j.mssp.2025.109431","DOIUrl":"10.1016/j.mssp.2025.109431","url":null,"abstract":"<div><div>Perovskite materials have garnered significant attention in both research and industry due to their excellent light absorption and unique optoelectronic properties. However, in perovskite solar cells (PSCs), severe non-radiative recombination at the interface between the carrier transport layer and the perovskite leads to performance losses, significantly hindering efficiency improvements. While the 2D/3D heterostructure can mitigate interfacial recombination losses, its asymmetric conductivity and potential uneven distribution may impair charge transfer and increase the series resistance of PSCs. To address the conflict between surface passivation and the conductivity of the passivated layer, we designed a novel heterojunction by substituting the 2D intermediate layer with a more conductive 3D perovskite. In this study, we introduce a bilayer FAPbI₃/MAPbI₃ perovskite prepared via solution processing. A 3D/3D double-layer perovskite structure was formed by depositing MAPbI₃ onto the FAPbI₃ substrate using a two-step dynamic spin-coating technique. UPS analysis confirmed this as a Type II 3D/3D perovskite heterojunction. By leveraging the energy band differences and transfer mechanisms between the two layers, the device achieves enhanced photoelectric conversion efficiency (PCE) and stability. The best-performing device reached a PCE of 22.95 %. Moreover, under continuous light-soaking operation at 25 °C in ambient air, it retained 83 % of its initial PCE after 600 h.</div></div>","PeriodicalId":18240,"journal":{"name":"Materials Science in Semiconductor Processing","volume":"192 ","pages":"Article 109431"},"PeriodicalIF":4.2,"publicationDate":"2025-03-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143548185","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"The adsorption mechanism of (Ni and NiO) doped PtSe2 monolayer to polar gas molecules (CO,NH3 and SO2): A first–principle study","authors":"Song Li,&nbsp;Wenchao Li,&nbsp;Yin Liao,&nbsp;Xingang Chen,&nbsp;Zhipeng Ma,&nbsp;Benxiang Ju","doi":"10.1016/j.mssp.2025.109448","DOIUrl":"10.1016/j.mssp.2025.109448","url":null,"abstract":"<div><div>Some major polar gas molecules (CO, NH₃, and SO₂) pose a serious threat to the smart greenhouse planting environment, so it is urgent to construct effective gas sensors to identify and remove toxic gas molecules. This article establishes different modification models for single-layer PtSe₂ and explores potential gas adsorption selectivity. The adsorption trends and electronic properties of PtSe₂, Ni-PtSe₂, and NiO-PtSe₂ on CO, NH₃, and SO₂ gas molecules were calculated based on first principles. The results showed that the CO/Ni-PtSe₂ adsorption system had the best <em>E</em>_ads (−1.24eV) and <em>Q</em>_t (−0.14e), with a variation in adsorption distance of −0.462 Å, indicating strong selectivity. Secondly, the WF and recovery rate of the SO₂/NiO-PtSe₂ adsorption system are low, making it easy to capture electrons. The NH₃/NiO-PtSe₂ system has advantages over NH₃/Ni-PtSe₂ adsorption. In addition, the hybridization between molecular orbitals and the charge transfer law during adsorption were revealed through Band gap, DOS, CDD and ELF. This work provides a new approach for gas detection of PtSe₂ monolayers doped with Ni and NiO in greenhouses, and will provide guidance for the research of new sensing materials in other fields.</div></div>","PeriodicalId":18240,"journal":{"name":"Materials Science in Semiconductor Processing","volume":"192 ","pages":"Article 109448"},"PeriodicalIF":4.2,"publicationDate":"2025-03-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143548188","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}