Jacob Wekalao , Ahmed Mehaney , May Bin-Jumah , Nassir Saad Alarifi , Mostafa R. Abukhadra , Hussein A. Elsayed , Amuthakkannan Rajakannu , K. Vijayalakshmi
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引用次数: 0
Abstract
This study presents a terahertz-based surface plasmon resonance (SPR) sensor developed for colorectal cancer detection. The device employs a distinctive multi-resonator design that integrates gold, silver, and graphene. Structurally, the sensor comprises an elliptical ring resonator coated with silver, surrounded by a gold-coated circular ring on a silicon dioxide substrate, while a graphene layer is incorporated to enhance sensing performance. Performance analysis was conducted using COMSOL Multiphysics simulations under varying conditions, including graphene chemical potential, incident angles, and resonator dimensions. The proposed sensor demonstrated a maximum sensitivity of 1100 GHz/RIU across a refractive index range of 1.329–1.348 RIU, achieving an optimal figure of merit of 17.460 RIU−1 at 0.719 THz. Additionally, a Random Forest Regression model was used to optimize sensor parameters, achieving up to 100 % accuracy in predicting sensor responses. The device also demonstrated potential as a 2-bit binary encoder, highlighting its versatility for both biosensing and data encoding applications.
期刊介绍:
Materials Science in Semiconductor Processing provides a unique forum for the discussion of novel processing, applications and theoretical studies of functional materials and devices for (opto)electronics, sensors, detectors, biotechnology and green energy.
Each issue will aim to provide a snapshot of current insights, new achievements, breakthroughs and future trends in such diverse fields as microelectronics, energy conversion and storage, communications, biotechnology, (photo)catalysis, nano- and thin-film technology, hybrid and composite materials, chemical processing, vapor-phase deposition, device fabrication, and modelling, which are the backbone of advanced semiconductor processing and applications.
Coverage will include: advanced lithography for submicron devices; etching and related topics; ion implantation; damage evolution and related issues; plasma and thermal CVD; rapid thermal processing; advanced metallization and interconnect schemes; thin dielectric layers, oxidation; sol-gel processing; chemical bath and (electro)chemical deposition; compound semiconductor processing; new non-oxide materials and their applications; (macro)molecular and hybrid materials; molecular dynamics, ab-initio methods, Monte Carlo, etc.; new materials and processes for discrete and integrated circuits; magnetic materials and spintronics; heterostructures and quantum devices; engineering of the electrical and optical properties of semiconductors; crystal growth mechanisms; reliability, defect density, intrinsic impurities and defects.