Materials Science in Semiconductor Processing最新文献

{"title":"Structurally engineered MoS2@CuCo2O4 with palm-leaf morphology for button-type supercapacitor applications","authors":"Abebe Mola Bogale ,&nbsp;Tholkappiyan Ramachandran ,&nbsp;Lemma Teshome Tufa ,&nbsp;Bayissa Badada Badassa ,&nbsp;Myung Eun Suk ,&nbsp;Rosaiah Pitcheri ,&nbsp;Jaebeom Lee ,&nbsp;Sileyew Kassu Jilcha ,&nbsp;Abdissa Yilma Tiky ,&nbsp;Bekuretsion Alemayohu Zenebe ,&nbsp;Nurelegn Koku Amare ,&nbsp;Moses M. Solomon ,&nbsp;Fiseha B. Tesema","doi":"10.1016/j.mssp.2025.109958","DOIUrl":"10.1016/j.mssp.2025.109958","url":null,"abstract":"<div><div>In the field of materials science, a combined influence boosts the physicochemical characteristics of mixed materials more than those of their separate parts. This study aims to synthesize a binary MoS₂@CuCo₂O₄ nanocomposite, structurally resembling palm leaves, using a template-free hydrothermal method to investigate its synergistic effects. The composition and microstructure of the MoS₂@CuCo₂O₄ nanocomposite were characterized through various analytical techniques, proving effective creation and a notable synergy among MoS₂ and CuCo₂O₄. Electrochemical measurements indicated that the MoS₂@CuCo₂O₄ demonstrated a high specific capacitance of 640.2 Fg^-1 at 1 Ag^-1, with a capacitance retention of 78.4 % after 10,000 cycles. This performance significantly outperformed CuCo₂O₄ alone, which recorded a capacitance of 579.9 F g⁻¹ and a retention of 68 %. Moreover, when used in a button-shaped supercapacitor with a one-sided design, the MoS₂@CuCo₂O₄ nanomaterial showed a particular capacitance of 128.7 F g⁻¹ under a current flow of 1 A g⁻¹, and retained 78.4 % of its original capacitance after undergoing 10,000 cycles under a high current flow of 15 A g⁻¹. The device reached its highest energy storage capacity of 45.14 Wh kg⁻¹ at a power density of 781 W kg⁻¹. These findings imply that the MoS₂@CuCo₂O₄ nanocomposite can significantly advance electrode materials for supercapacitors by effectively harnessing synergistic effects. This research offers novel perspectives on the advancement of energy storage materials, setting a foundation for future breakthroughs in supercapacitor technology.</div></div>","PeriodicalId":18240,"journal":{"name":"Materials Science in Semiconductor Processing","volume":"200 ","pages":"Article 109958"},"PeriodicalIF":4.6,"publicationDate":"2025-08-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144852451","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Prediction of optoelectronic properties and efficiency of halide double perovskites Rb2NaInX6 (X=Br, I) for solar cell applications: A density functional theory approach","authors":"Mossab Oublal,&nbsp;Mobarek Dib,&nbsp;Ali Khalal,&nbsp;Fatiha Chibane,&nbsp;Es-Said Es-Salhi,&nbsp;Abdelhakim Nafidi,&nbsp;Essediq Youssef El-Yakoubi","doi":"10.1016/j.mssp.2025.109917","DOIUrl":"10.1016/j.mssp.2025.109917","url":null,"abstract":"<div><div>The development of lead-free halide double perovskites has increased drastically in recent years, owing to their promising properties and non-toxicity. First-principles calculations were employed to investigate the structural, elastic, thermodynamic, electronic, and optical properties of <span><math><mrow><msub><mtext>Rb</mtext><mn>2</mn></msub><mtext>NaIn</mtext><msub><mi>X</mi><mn>6</mn></msub></mrow></math></span> (X = Br, I). The obtained results were then used to predict the maximum efficiency for solar cell applications. The structural stability, mechanical strength properties, and thermodynamic stability of the studied compounds are shown and verified by Goldschmidt's tolerance factor, octahedral factor, elastic constants, bulk modulus, formation energy and thermodynamic potentials. The bromide-based compound demonstrates superior mechanical and thermodynamic stability, whereas the iodide-based substance exhibits higher anisotropy. The electronic findings indicate direct band gaps of 2.879 eV and 1.35 eV (TB-mBJ) for <span><math><mrow><msub><mtext>Rb</mtext><mn>2</mn></msub><mtext>NaIn</mtext><msub><mtext>Br</mtext><mn>6</mn></msub></mrow></math></span> and <span><math><mrow><msub><mtext>Rb</mtext><mn>2</mn></msub><mtext>NaIn</mtext><msub><mi>I</mi><mn>6</mn></msub></mrow></math></span>, respectively. These results indicate absorption in the ultraviolet and visible regions of the electromagnetic spectrum. The spectroscopic limited maximum efficiency (SLME) model was used to assess the efficiency of the studied absorbers. For a thick film of 0.8 μm at room temperature, <span><math><mrow><msub><mtext>Rb</mtext><mn>2</mn></msub><mtext>NaIn</mtext><msub><mtext>Br</mtext><mn>6</mn></msub></mrow></math></span> attains a maximum power conversion of 4.82 %, whereas <span><math><mrow><msub><mtext>Rb</mtext><mn>2</mn></msub><mtext>NaIn</mtext><msub><mi>I</mi><mn>6</mn></msub></mrow></math></span> exceeds this value to reach 27.29 %. The efficiency was further validated by designing <span><math><mrow><mtext>FTO</mtext><mo>/</mo><mtext>Ti</mtext><msub><mi>O</mi><mn>2</mn></msub><mo>/</mo><msub><mtext>Rb</mtext><mn>2</mn></msub><mtext>NaIn</mtext><msub><mi>X</mi><mn>6</mn></msub><mspace></mspace><mrow><mo>(</mo><mrow><mi>X</mi><mo>=</mo><mtext>Br</mtext><mo>,</mo><mi>I</mi></mrow><mo>)</mo></mrow><mo>/</mo><msub><mtext>Cu</mtext><mn>2</mn></msub><mi>O</mi><mo>/</mo><mtext>Au</mtext></mrow></math></span> perovskite solar cells using SCAPS-1D software. It has been demonstrated that elevated cell temperature has a detrimental impact on the performance of both absorber layers. The negative impact is more pronounced in the iodide-based composition due to its lower thermodynamic stability compared to <span><math><mrow><msub><mtext>Rb</mtext><mn>2</mn></msub><mtext>NaIn</mtext><msub><mtext>Br</mtext><mn>6</mn></msub></mrow></math></span>.</div></div>","PeriodicalId":18240,"journal":{"name":"Materials Science in Semiconductor Processing","volume":"200 ","pages":"Article 109917"},"PeriodicalIF":4.6,"publicationDate":"2025-08-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144852454","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Enhanced temperature stability of olivine-type silicate microwave dielectric ceramic via high-entropy strategy","authors":"Linqiao Zhang ,&nbsp;Yuanming Lai ,&nbsp;Pingwen Xiang ,&nbsp;Feng Liu ,&nbsp;Yuanxun Li ,&nbsp;Gang Jiang ,&nbsp;Weiping Gong ,&nbsp;Qian Liu ,&nbsp;Chongsheng Wu","doi":"10.1016/j.mssp.2025.109974","DOIUrl":"10.1016/j.mssp.2025.109974","url":null,"abstract":"<div><div>The olivine-type high-entropy Li(Yb_0.2Tm_0.2Ho_0.2In_0.2Y_0.2)SiO₄ (L5ASO) ceramics were successfully synthesized through the solid-state reaction method at 1060–1140 °C. The phase composition of high-entropy L5ASO ceramics consists of Li(Yb, Tm, Ho, In, Y)SiO₄ phase and a minor LiY₉(SiO₄)₆O₂ secondary phase. High-entropy L5ASO ceramic was systematically investigated using complex chemical bond theory (P-V-L theory), Raman spectroscopy, and SEM. The dielectric constant (<em>ɛ</em>_<em>r</em>) of high-entropy L5ASO ceramics is predominantly governed by the ionicity of the Li-O and A-O bonds, while the quality factor (<em>Q×f</em>) correlates strongly with the lattice energy of Si-O bonds. Additionally, high-entropy effects effectively reduce [AO]₆ octahedral distortion, achieving a near-zero resonant frequency temperature coefficient (<em>τ</em>_<em>f</em> = −1.3 ppm/°C). The high-entropy L5ASO ceramics exhibit desirable microwave dielectric properties with <em>Q×f</em> = 20100 GHz, <em>ɛ</em>_<em>r</em> = 9.44, and <em>τ</em>_<em>f</em> = −1.3 ppm/°C when sintered at 1060 °C. These findings establish theoretical guidelines for designing high-entropy ceramics with tailored microwave dielectric properties.</div></div>","PeriodicalId":18240,"journal":{"name":"Materials Science in Semiconductor Processing","volume":"200 ","pages":"Article 109974"},"PeriodicalIF":4.6,"publicationDate":"2025-08-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144852453","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Unlocking efficient charge transport in PSCs: The critical role of oxidizing agents in PEALD NiOx thin films","authors":"Mario A. Hidrogo-Rico ,&nbsp;Isabel Mendívil-Palma ,&nbsp;Paul Horley ,&nbsp;F. Servando Aguirre-Tostado ,&nbsp;Fernando Quintero-Borbón ,&nbsp;Edgar Martínez-Guerra ,&nbsp;Diego G. Guzmán ,&nbsp;Marcelo A. Martínez-Puente ,&nbsp;Francisco C. Marques ,&nbsp;Eduardo Martínez-Guerra","doi":"10.1016/j.mssp.2025.109969","DOIUrl":"10.1016/j.mssp.2025.109969","url":null,"abstract":"<div><div>This study reports on electronic properties and cationic defects in the thin films of non-stoichiometric nickel oxide (NiO_x) synthesized with plasma-enhanced atomic layer deposition (PEALD). Starting from nickel acetylacetonate [Ni(acac)₂] as a metal-organic precursor, we employed water (P-W), ozone (P-Oz), and oxygen plasma (P-Ox) as oxidizing agents for direct plasma-enhanced ALD (DPALD) to evaluate their impact on the electronic structure of NiO_x. The primary objective is to identify the most suitable oxidizing agent for producing NiO_x films with optimal performance for hole transport layers (HTLs) in optoelectronic devices. Angle-resolved X-ray photoelectron spectroscopy (AR-XPS) confirmed the non-stoichiometric nature of our films. Measurements made at the 45° takeoff angle revealed significant variations in the Ni²⁺/Ni³⁺ ratio depending on the oxidizing agent chosen, increasing from 0.80 (P-W) to 0.89 (P-Ox). This trend indicates improved defect formation control, permitting to achieve valence band shift of 0.98 eV for P-Ox sample relative to <em>E</em>_<em>V</em> of MAPbI₃. Additionally, reflection electron energy loss spectroscopy (REELS) revealed band gap narrowing from 3.53 eV (P-W) to 3.38 eV (P-Ox), suggesting enhancement of electronic properties. Band alignment analysis based on XPS and REELS data demonstrates that NiO_x films synthesized with oxygen plasma exhibit favorable band alignment with MAPbI₃ perovskite. Moreover, contact angle measurements reveal that subtle changes in defect chemistry affect the wettability of NiO_x surfaces with respect to perovskite precursor solutions. Put together, these findings identify oxygen plasma-assisted synthesis as the most promising strategy for fabricating NiO_x-based HTLs with superior electronic properties and advantageous interface characteristics, which are promising for the next-generation optoelectronic devices. This work emphasizes the importance of PEALD oxidazing agent choice for achieving a precise tailoring of NiO_x electronic structure and enhancing the resulting device performance.</div></div>","PeriodicalId":18240,"journal":{"name":"Materials Science in Semiconductor Processing","volume":"200 ","pages":"Article 109969"},"PeriodicalIF":4.6,"publicationDate":"2025-08-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144851845","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Enhancing optoelectronic performance of MoTe2-based photodetectors through PbS quantum dot integration","authors":"Saddam Hussain ,&nbsp;Shaoguang Zhao ,&nbsp;Qiman Zhang ,&nbsp;Nasrullah Wazir ,&nbsp;Ruibin Liu ,&nbsp;Li Tao","doi":"10.1016/j.mssp.2025.109970","DOIUrl":"10.1016/j.mssp.2025.109970","url":null,"abstract":"<div><div>Molybdenum telluride (MoTe₂) has considerable potential for photonics devices owing to its high carrier mobility, low standby current, and high light on/off ratio. Nevertheless, its low light absorption and high recombination rates limit its photoresponse. A PbS/MoTe₂ heterojunction photodetector was developed by combining MoTe₂ exfoliation with PbS colloidal quantum dots (CQDs) spin-coating. Combining PbS CQDs with MoTe₂ enabled faster electron flow, better light absorption, and efficient charge transfer. The device showed a wide operational range of 520–1550 nm, achieving its highest responsivity of 9.336 A/W and specific detectivity of 4.648 × 10¹⁰ Jones. The heterojunction structure optimized the charge separation process, improving photoresponse. The research combines MoTe₂ with PbS CQDs to build photodetectors that achieve superior efficiency alongside extended wavelength sensitivity for enhanced optoelectronic capabilities.</div></div>","PeriodicalId":18240,"journal":{"name":"Materials Science in Semiconductor Processing","volume":"200 ","pages":"Article 109970"},"PeriodicalIF":4.6,"publicationDate":"2025-08-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144842740","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Study of CQD-based fluorescent biosensors","authors":"B. Jebanisha,&nbsp;V.N. Meena Devi","doi":"10.1016/j.mssp.2025.109966","DOIUrl":"10.1016/j.mssp.2025.109966","url":null,"abstract":"<div><div>Carbon quantum dots (CQDs), a new nanomaterial with intriguing physical and chemical properties, become the subject of intensive research. CQDs have special qualities that make them an attractive option for biosensing. These include their intrinsic fluorescence, excellent resistance to photobleaching, high surface area, ease of synthesis, variable precursor selection and surface tunability. As a result, it is very helpful in many different biosensing domains such as heavy metal ions, clinical, forensic, medical, food and drug analysis and diagnostics. Furthermore, their ability to engage through various ways with certain molecules allows them to modify their fluorescence properties making them useful for molecule sensing. CQDs based biosensors employed in both the medical and agricultural domains and have an impact on both people and their surroundings. The use of plant parts as starting materials for Carbon Dots (CDs) offers several advantages, including cost-effectiveness, eco-friendliness, and availability. Nevertheless, specialized research on CDs made from plant parts for biosensing applications is lacking. The study provides a summary of synthesis methods, optical properties, and applications. This review main objective is to give an overview of how these carbonaceous nanoparticles are used in biosensors for the detection of infectious and non-communicable illnesses as well as heavy metals. It also includes a general description of the primary techniques and precursors described in the scientific literature for the synthesis of CQDs, as well as the chemical, optical, electrical, and biological characteristics that stand out the most from them.</div></div>","PeriodicalId":18240,"journal":{"name":"Materials Science in Semiconductor Processing","volume":"200 ","pages":"Article 109966"},"PeriodicalIF":4.6,"publicationDate":"2025-08-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144842737","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Interplay of rake angle and slip interaction in achieving enhanced ductile cutting of sapphire","authors":"Dehui Liu ,&nbsp;Yunze Qi ,&nbsp;Junyun Chen ,&nbsp;Mengdong Ma ,&nbsp;Shuo Zhang","doi":"10.1016/j.mssp.2025.109964","DOIUrl":"10.1016/j.mssp.2025.109964","url":null,"abstract":"<div><div>Sapphire's exceptional optical and mechanical properties are critical for advanced optical components, yet its extreme brittle and complex ductile-brittle transition (DBT) behavior during cutting hinder ultra-precision surface generation. To address these challenges, the role of nano-polycrystalline diamond (NPD) tool rake angles of 0° to −30° in enhancing ductile-mode cutting of sapphire was systematically explored in this study. Through variable-depth scratch experiments, cutting force dynamics and multiscale subsurface characterization, we explained DBT mechanisms and optimized tool geometry for minimized fracture. It is found that, −20° rake angle maximized the critical cutting depth to 600 nm by balancing hydrostatic pressure and crack suppression. Subsurface analysis identified a 650 nm damage gradient (amorphous→polycrystalline→crystalline) and exposed C-plane twining, C-plane slip and R-plane slip interactions as dual drivers of plasticity. Their interactions nucleate cracks at stress concentrations. Cutting force reorientation toward R-plane reaching 51.3° at −30° rake angle, amplified shear stress and intensified slip-driven brittleness beyond −20°. Alternating ductile/brittle zones stem from cyclical stress accumulation/release, exacerbated by excessive negative rake angles. These results establish the optimal rake angle for extending sapphire's ductile-regime window, providing fundamental insights into crystalline slip-mediated DBT and direct guidelines for high-integrity optical surface fabrication.</div></div>","PeriodicalId":18240,"journal":{"name":"Materials Science in Semiconductor Processing","volume":"200 ","pages":"Article 109964"},"PeriodicalIF":4.6,"publicationDate":"2025-08-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144842739","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Role of polyethylene glycol on the enhanced activity of recyclable Na2Ti6O13/Al2O3 fibres for photocatalytic degradation of azophloxine","authors":"Meihua Lian,&nbsp;Wenjie Zhang,&nbsp;Xiaoxiao Zhangsun","doi":"10.1016/j.mssp.2025.109955","DOIUrl":"10.1016/j.mssp.2025.109955","url":null,"abstract":"<div><div>Polyethylene glycol (PEG) with different molecular weight (<em>n</em>) was used in the sol-gel precursor to prepare the flexible and recyclable Na₂Ti₆O₁₃/Al₂O₃ fibres (AFs). To enhance the activity of Na₂Ti₆O₁₃(<em>n</em>)/AF, PEG was used to promote the porosity in the supported Na₂Ti₆O₁₃ layer. The SEM images and the XPS results demonstrate the supporting of Na₂Ti₆O₁₃ on AFs. The bandgap energies of Na₂Ti₆O₁₃(600)/AF, Na₂Ti₆O₁₃(2000)/AF and Na₂Ti₆O₁₃(6000)/AF were 3.34, 3.35 and 3.33 eV, respectively. Both of the specific surface area and pore volume were enhanced for Na₂Ti₆O₁₃(<em>n</em>)/AF, and Na₂Ti₆O₁₃(2000)/AF had the largest pore volume (0.001009 cm³/g) and specific surface area (0.67 m²/g). The fluorescence intensities increased in the sequence Na₂Ti₆O₁₃(6000)/AF, Na₂Ti₆O₁₃(600)/AF and Na₂Ti₆O₁₃(2000)/AF, indicating the increasing sequence in the number of hydroxyl radicals. The azophloxine degradation efficiencies of Na₂Ti₆O₁₃(2000)/AF in the first and fifth reaction cycles were 87.5 % and 82.1 %, respectively. The reusability and stability of Na₂Ti₆O₁₃(2000)/AF demonstrate the application potential of the fibres in large-scale water treatment.</div></div>","PeriodicalId":18240,"journal":{"name":"Materials Science in Semiconductor Processing","volume":"200 ","pages":"Article 109955"},"PeriodicalIF":4.6,"publicationDate":"2025-08-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144830983","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Reactive force-field-based molecular dynamics simulation of chemical mechanical polishing of silicon carbide in alcoholic environment","authors":"Ling Pan ,&nbsp;Shiyang Tan ,&nbsp;Changhao Wu ,&nbsp;Yunhui Chen","doi":"10.1016/j.mssp.2025.109963","DOIUrl":"10.1016/j.mssp.2025.109963","url":null,"abstract":"<div><div>The mechanism of material removal in chemical mechanical polishing (CMP) process is closely related to polishing fluid environment. The reactive force field (ReaxFF) is employed to analyze the chemical reactions and polishing behavior on the SiC surface, in order to investigate the friction chemical mechanism during diamond polishing in an alcoholic environment. Moreover, radial distribution function curves of various types of chemical bonds (Si-O, C-O) generated after CMP process of SiC are depicted, and bonding law is derived. Additionally, the effect of abrasive polishing speed on material removal and processing effect on silicon carbide workpiece are also investigated. SiC is prone to being oxidized by hydroxyl groups in the polishing liquid, forming oxides such as SiO and Si₄C_4-xO₂, which are easier to remove. These oxides can be removed with lower friction. Optimal polishing results are achieved using ethanol. Corresponding roughness <em>R</em>_a of machined surface is only 0.09 nm, which is consistent with experimental results. Removal mechanisms of Si and C atoms in silicon carbide under the coupling of chemical reaction and mechanical friction, respectively, are elucidated. This study elucidates the mechanism of chemical mechanical polishing in alcohol environment, providing theoretical foundation for enhancing CMP process.</div></div>","PeriodicalId":18240,"journal":{"name":"Materials Science in Semiconductor Processing","volume":"200 ","pages":"Article 109963"},"PeriodicalIF":4.6,"publicationDate":"2025-08-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144830979","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Hall and magnetoresistivity measurements in high energy electron irradiated p-type silicon","authors":"Algirdas Mekys ,&nbsp;Leonid Makarenko ,&nbsp;Sarunas Vaitekonis ,&nbsp;Juozas V. Vaitkus","doi":"10.1016/j.mssp.2025.109926","DOIUrl":"10.1016/j.mssp.2025.109926","url":null,"abstract":"<div><div>Silicon p-type samples irradiated with 6 MeV and 4 MeV electrons (fluence range from 0.4 to <span><math><mrow><mn>5</mn><mo>×</mo><mn>1</mn><msup><mrow><mn>0</mn></mrow><mrow><mn>16</mn></mrow></msup><msup><mrow><mtext>cm</mtext></mrow><mrow><mo>−</mo><mn>2</mn></mrow></msup></mrow></math></span>) were analyzed simultaneously using Hall and magnetoresistivity (MR) effects to evaluate the accumulated damage to the material. The measurements, performed in the 100–400 K temperature range, showed a significant drop in the Hall signal at lower temperatures, while the MR remained high. The charge carrier density dependence on temperature revealed thermal activation energies, which were attributed to known point defects. By combining these results with the carrier mobility data, the variation in total defect density with irradiation fluence was evaluated. Additionally, the annealing of the irradiated materials was performed, and the observed changes were recorded.</div></div>","PeriodicalId":18240,"journal":{"name":"Materials Science in Semiconductor Processing","volume":"200 ","pages":"Article 109926"},"PeriodicalIF":4.6,"publicationDate":"2025-08-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144830981","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}