Materials Science in Semiconductor Processing最新文献

{"title":"Epitaxial lateral overgrowth of single crystal diamond through self-assembled highly ordered porous colloidal SiO2 opal mask","authors":"Victor Ralchenko ,&nbsp;Andrey Bolshakov ,&nbsp;Dmitry Sovyk ,&nbsp;Vladimir Artemov ,&nbsp;Alexander Vasiliev ,&nbsp;Yury Krylov ,&nbsp;Artem Martyanov ,&nbsp;Irina Fedorova ,&nbsp;Vladimir Masalov ,&nbsp;Alexey Popovich ,&nbsp;Bing Dai ,&nbsp;Jiaqi Zhu","doi":"10.1016/j.mssp.2025.109642","DOIUrl":"10.1016/j.mssp.2025.109642","url":null,"abstract":"<div><div>Synthesis of diamond layers with reduced dislocation density is vital for diamond application in electronics and photonics. The method of epitaxial lateral growth (ELO) based on blocking the dislocations propagation by a patterned mask on the substrate, is promising to control the dislocations. Here, we demonstrate the epitaxial diamond growth using a novel type of the mask for diamond ELO, consisting of a few monolayers thick self-assembled periodic lattice of submicron SiO₂ spheres (opal structure). The method is simple, and does not require a lithography technique for the pattern definition. The porous opal mask with SiO₂ spheres of ≈240 nm diameter was deposited on HPHT diamond substrates, then the epitaxial film was grown from bottom by microwave plasma CVD in a CH₄-H₂-O₂ gas mixture. After penetration through the void system, a continuous smooth diamond film formed on the surface of the opal layer. High resolution transmission electron microscopy (HRTEM), electron diffraction and electron back scattering diffraction unambiguously indicated the single crystal structure of the formed diamond film, which were analyzed also with Raman and photoluminescence spectroscopy. The realized ELO version is promising for growth of low-defect single crystal diamond material, provided a further improvement of the opal mask colloidal templating.</div></div>","PeriodicalId":18240,"journal":{"name":"Materials Science in Semiconductor Processing","volume":"196 ","pages":"Article 109642"},"PeriodicalIF":4.2,"publicationDate":"2025-05-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143924771","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Enhanced dielectric properties by doping Jahn-Teller Mn ions in ilmenite-type Zn0.7Mg0.3TiO3 ceramics","authors":"Liangchen Fan,&nbsp;Yuanxun Li,&nbsp;Fuyu Li,&nbsp;Jie Li,&nbsp;Kai Gu,&nbsp;Yulong Liao","doi":"10.1016/j.mssp.2025.109647","DOIUrl":"10.1016/j.mssp.2025.109647","url":null,"abstract":"<div><div>The study aimed to explore the impact of substituting Ti⁴⁺ with Jahn-active Mn ions on the structural and dielectric characteristics of ilmenite Zn_0.7Mg_0.3TiO₃. Polycrystalline samples of Zn_0.7Mg_0.3Ti_1-xMn_xO₃ (x ≤ 0.12) were synthesized using the solid-phase method at a medium temperature of 1150 °C. Results indicate that the microwave dielectric properties (<em>ε</em>_<em>r</em> = 20.7, Q × <em>f</em> = 50,808 GHz, <em>τ</em>_<em>f</em> = −26.7 ppm/°C) of Zn_0.7Mg_0.3Ti_1-xMn_xO₃ ceramics significantly improve with the incorporation of Jahn-Teller Mn ions, particularly in terms of dielectric loss and temperature drift coefficient. Quantitative XPS analysis and Raman drift analysis further supports the notion that the Jahn-Teller distortion induced by the Mn³⁺ cation affects the Q × <em>f</em> value and thermal stability. This approach of leveraging Jahn-Teller distortion for enhancing material properties introduces a novel perspective to the development and utilization of electronic materials.</div></div>","PeriodicalId":18240,"journal":{"name":"Materials Science in Semiconductor Processing","volume":"196 ","pages":"Article 109647"},"PeriodicalIF":4.2,"publicationDate":"2025-05-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143924773","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Scalable growth of optically uniform MoWS2 alloys by sulfurization of ultrathin Mo/W stacks","authors":"Salvatore Ethan Panasci ,&nbsp;Emanuela Schilirò ,&nbsp;Antal Koos ,&nbsp;Tayfun Kutlu ,&nbsp;Hasan Sahin ,&nbsp;Fabrizio Roccaforte ,&nbsp;Béla Pécz ,&nbsp;Filippo Giannazzo","doi":"10.1016/j.mssp.2025.109648","DOIUrl":"10.1016/j.mssp.2025.109648","url":null,"abstract":"<div><div>Two-dimensional (2D) transition metal dichalcogenides (TMDs) ternary alloys, such as Mo_xW_1-xS₂, are very appealing for the possibility of continuously tuning their excitonic bandgap by the composition. However, the deposition of ultra-thin (monolayers or few-layers) alloys with laterally uniform composition on large area represents a main challenge of currently adopted synthesis methods. In this work, we demonstrated the growth of highly uniform Mo_0.5W_0.5S₂ bi-layers on cm² size SiO₂/Si substrates by employing a simple and scalable approach, i.e. the sulfurization of a pre-deposited ultra-thin Mo/W stack at a temperature of 700 °C. Comparison of Mo(1.2 nm)/SiO₂, W(1.2 nm)/SiO₂, and Mo(1.2 nm)/W(1.2 nm)/SiO₂ samples after identical sulfurization conditions revealed very different results, i.e. (i) a uniform monolayer (1L) MoS₂ film, (ii) separated multilayer WS₂ islands, and (iii) a uniform bilayer (2L) Mo_0.5W_0.5S₂ film. This indicates how W surface diffusion and coalescence on SiO₂ surface plays a main role in WS₂ islands formation, whereas the reaction between S vapour with Mo films or Mo/W stacks represents the dominant mechanism for the formation of MoS₂ and the MoWS₂ alloy. Micro-photoluminescence (PL) mapping of the obtained 2L-Mo_0.5W_0.5S₂ film showed an excellent uniformity of light emission on large area with an exciton peak at 1.97 eV, significantly blue-shifted with respect to PL emission of 1L-MoS₂ at 1.86 eV. Such highly uniform optical properties make the grown MoWS₂ alloy very promising for optoelectronic applications.</div></div>","PeriodicalId":18240,"journal":{"name":"Materials Science in Semiconductor Processing","volume":"196 ","pages":"Article 109648"},"PeriodicalIF":4.2,"publicationDate":"2025-05-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143928344","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Anchored Li2MnO3 nanoparticles on ZnO nanosheets photocatalyst for effective CO2 reduction to CH3OH upon visible illumination","authors":"Abdulaziz Al-Anazi ,&nbsp;L.A. Al-Hajji ,&nbsp;Adel A. Ismail ,&nbsp;Ahmed Mohamed El-Toni ,&nbsp;Aslam Khan ,&nbsp;Ying Huang","doi":"10.1016/j.mssp.2025.109654","DOIUrl":"10.1016/j.mssp.2025.109654","url":null,"abstract":"<div><div>Photocatalytic reduction of CO₂ has garnered significant attention as a sustainable and clean process for producing fuels and chemicals. Various heterojunction-based photocatalysts are explored to effectively reduce CO₂ to valuable chemicals. In this study, porous ZnO sheets are fabricated through a hydrothermal process using polyvinylpyrrolidone as a pore builder. Moreover, Li₂MnO₃ NPs were incorporated into the ZnO nanosheet via the impregnation method with varying Li₂MnO₃ contents (5–20 %). Li₂MnO₃ NPs are uniformly dispersed on the porous ZnO sheets, which enhances the photocatalytic performance. The resulting Li₂MnO₃/ZnO photocatalyst demonstrates an improved CO₂ photocatalytic reduction to CH₃OH under visible illumination. The 15 % Li₂MnO₃/ZnO photocatalyst achieves a maximum formation rate of CH₃OH at approximately 156.04 μmol g^-1h^-1, which is 15.85 times greater than that of bare ZnO. Furthermore, the photocatalytic ability after five cycles of reactions remains remarkably stable due to its exceptional stability during CO₂ reduction. The enhanced photocatalytic performance of the Li₂MnO₃/ZnO photocatalyst is attributed to the modification of the bandgap structure, strong visible light response, improved CO₂ adsorption, high electronic reduction capability, and effective charge transport capacity. This work contributes to the novel design of highly effective S-scheme mechanisms for the photoreduction of CO₂.</div></div>","PeriodicalId":18240,"journal":{"name":"Materials Science in Semiconductor Processing","volume":"196 ","pages":"Article 109654"},"PeriodicalIF":4.2,"publicationDate":"2025-05-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143924772","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Gaussian distribution on electrical properties of identically fabricated Au/n-GaN Schottky junctions with a Nd2O3 interfacial layer","authors":"D. Surya Reddy ,&nbsp;V. Rajagopal Reddy ,&nbsp;Chel-Jong Choi","doi":"10.1016/j.mssp.2025.109650","DOIUrl":"10.1016/j.mssp.2025.109650","url":null,"abstract":"<div><div>This work emphasizes the twenty Au/Nd₂O₃/n-GaN MIS junctions identically fabricated using the e-beam evaporation technique. The electrical and interfacial properties of the identically prepared MIS junctions were investigated using current-voltage (I-V) measurements. The surface topology and chemical properties of the Nd₂O₃ film on the n-GaN were investigated using AFM and XPS techniques. The barrier height (Φ_b) and the ideality factor (n) of the twenty MIS junctions were estimated, revealing variability across different junctions. Using statistical analysis, the mean values of rectification ratio (RR), barrier height (Φ_b), ideality factor (n), series resistance (R_S) and shunt resistance (R_Sh) were estimated from I-V data based on thermionic emission (TE) theory. The fluctuations in the electrical parameters are attributed to an inhomogeneous interfacial layer and barrier height, as well as the non-uniformity of interfacial traps, dislocations and grain boundaries. The laterally homogeneous Φ_b was also estimated for the twenty MIS junctions from the linear association between the experimental n and Φ_b. The lateral inhomogeneity of Φ_b was clarified by examining the correlation between n and Φ_b of the identically prepared MIS junctions. Further, the mean interface state density (N_SS) was determined for the MIS junctions.</div></div>","PeriodicalId":18240,"journal":{"name":"Materials Science in Semiconductor Processing","volume":"196 ","pages":"Article 109650"},"PeriodicalIF":4.2,"publicationDate":"2025-05-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143916272","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Effect of aminoguanidine hydrochloride on chemical mechanical polishing of Ta-based barrier layers on TSV wafers","authors":"Yu Zhu ,&nbsp;Ru Wang ,&nbsp;Xuhua Chen ,&nbsp;Zhanjie Du ,&nbsp;Zhe Liang ,&nbsp;Tao Zheng ,&nbsp;Yanwei Dong ,&nbsp;Yang Chen ,&nbsp;Peng Yang ,&nbsp;Yunhui Shi","doi":"10.1016/j.mssp.2025.109574","DOIUrl":"10.1016/j.mssp.2025.109574","url":null,"abstract":"<div><div>As the feature size of planar semiconductor processes gradually decreases, the development of chips to increase integration in the 2D direction gradually stagnates. Consequently, to keep pushing the boundaries of chip integration, the Through Silicon Via (TSV) technology as a representative of the 2.5D and 3D integrated circuits (IC) technology, has become the new type of solution. Chemical Mechanical Polishing (CMP) of TSV is a key process to ensure the surface flatness of silicon through-holes, to remove excess material, to improve interconnect quality and reliability, and to meet the demands of advanced processes, which is of great significance to enhance the performance and production efficiency of semiconductor devices. The removal rate of Ta barrier layer and the surface quality of TSV wafer after CMP is a contradiction that needs to be balanced. Aminoguanidine Hydrochloride (AGHCl) as a complexing agent in the slurry can effectively solve the above problems. Aminoguanidine is coordinated by the N2 atom of the terminal hydrazine group and the N3 atom of the imine to form a complex with the metal ions in a planar five-membered ring structure, thus realizing the removal of the material. Electrochemistry, X-ray photoelectron spectroscopy (XPS), scanning electron microscopy (SEM), and density functional theory calculations (DFT) were used to analyze the complexation mechanism of AGHCl on Ta and Cu; Atomic force microscope (AFM) was used to compare the surface quality before and after the polishing; step profiler was used to reveal the correction ability to dishing pits; and a laser nano-particle sizer was used to characterize the stability of the slurry. When the concentration of AGHCl was 0.75 wt%, the removal rate of Cu was 979 Å/min and that of Ta was 1305 Å/min, and the rate-selective ratio of Ta and Cu was 1.33:1. The surface roughness of Cu and Ta decreased from 1.98 nm to 0.287 nm and 2.39 nm–0.111 nm respectively, and the surface quality was effectively improved. The depth of the dishing pit of copper block on the TSV wafer was reduced from 2442 Å to 1160 Å after polishing, which meets the requirement of industrial application.</div></div>","PeriodicalId":18240,"journal":{"name":"Materials Science in Semiconductor Processing","volume":"196 ","pages":"Article 109574"},"PeriodicalIF":4.2,"publicationDate":"2025-05-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143916273","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"A novel multifunctional S-WOx/Co3O4 p-n heterojunction for solar light-driven photocatalytic hydrogen production and treatment of organic dyes through adsorption","authors":"Kebena Gebeyehu Motora,&nbsp;Chang-Mou Wu,&nbsp;Chia-Hsing Hsieh","doi":"10.1016/j.mssp.2025.109636","DOIUrl":"10.1016/j.mssp.2025.109636","url":null,"abstract":"<div><div>Environmental pollution and energy crisis are major problems in the world nowadays. Consequently, addressing these issues is crucial to live in safe environment and to get sufficient energy. Accordingly, scholars are looking for a clean and green energy source that can replace fossil fuels, cheap, abundant, and effective method for waste treatment. Interestingly, photocatalytic hydrogen production is considered as one of the ideal way to overcome these problem by converting light energy (solar) into chemical energy. Hydrogen gas (H₂) possesses high energy capacity and doesn't release toxic substances to the environment. Thus, development of efficient photocatalyst is very crucial. Hence, a novel multifunctional S-WOx/Co₃O₄ p-n heterojunction was proposed and synthesized in this work based on high surface area, n-type, and limited photocatalytic property of S-WOx and excellent optical absorption, p-type, and ease of preparation of Co₃O₄. The prepared materials were thoroughly characterized using available precision techniques. The photocatalytic H₂ production, and adsorption properties of the synthesized materials were investigated. The findings confirm that the developed S-WOx/Co₃O₄ p-n heterojunction exhibited excellent photocatalytic H₂ production (578 μmol/g⋅h), and removal of 95.36% of MB, and 77.83% of CR organic dyes via adsorption. These results assure the multi-functionality of the synthesized S-WOx/Co₃O₄ p-n heterojunction for clean energy generation and wastewater treatment. Thus, we anticipate that the developed S-WOx/Co₃O₄ p-n heterojunction can play significant role in addressing both energy shortage and environmental remediation.</div></div>","PeriodicalId":18240,"journal":{"name":"Materials Science in Semiconductor Processing","volume":"196 ","pages":"Article 109636"},"PeriodicalIF":4.2,"publicationDate":"2025-05-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143916274","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"A three-step surface treatment and its impacts on electrical properties of c- and m-face GaN/Al2O3 MOS structures","authors":"Masahiro Hara ,&nbsp;Toshihide Nabatame ,&nbsp;Yoshihiro Irokawa ,&nbsp;Tomomi Sawada ,&nbsp;Manami Miyamoto ,&nbsp;Hiromi Miura ,&nbsp;Tsunenobu Kimoto ,&nbsp;Yasuo Koide","doi":"10.1016/j.mssp.2025.109606","DOIUrl":"10.1016/j.mssp.2025.109606","url":null,"abstract":"<div><div>In this study, a three-step surface treatment, composed of SiO₂ deposition, subsequent annealing, and SiO₂ removal, is adopted for the fabrication of <em>c</em>- and <em>m</em>-plane n-type GaN/Al₂O₃ MOS structures, and the impact of the proposed process on electrical properties and its crystal face dependence are systematically investigated. While no significant changes are observed after the proposed surface treatment for <em>m</em>-face GaN, an identical process causes changes in the properties of <em>c</em>-face GaN MOS structures: an about 0.2<!--> <!-->V lower flat-band voltage (<em>V</em>_FB) and an about 0.2<!--> <!-->eV higher conduction band offset, associated with a change in the thickness or crystalline quality of a gallium oxide (GaO<span><math><msub><mrow></mrow><mrow><mi>x</mi></mrow></msub></math></span>) layer on the <em>c</em>-face GaN surface. The modified energy band alignment leads to a reduced gate leakage current, reducing the <em>V</em>_FB drift after high-field positive bias stress (4.5<!--> <!-->MV/cm) almost by half only for <em>c</em>-face GaN MOS structures. The fact that even an identical process has a crystal face-dependent impact on the properties of GaN MOS structures is important in developing the fabrication process of GaN planar and trench MOSFETs.</div></div>","PeriodicalId":18240,"journal":{"name":"Materials Science in Semiconductor Processing","volume":"196 ","pages":"Article 109606"},"PeriodicalIF":4.2,"publicationDate":"2025-05-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143911914","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"MOF-derived hollow Si with dual Al layers as a high-performance lithium-ion battery film anode","authors":"Jibao Dong,&nbsp;Jing Jin,&nbsp;Weiguang Yang","doi":"10.1016/j.mssp.2025.109644","DOIUrl":"10.1016/j.mssp.2025.109644","url":null,"abstract":"<div><div>Si-based anodes are limited in their widespread application mainly because of their significant volume expansion during cycling. In this study, the hollow Si thin film anode (H-Si-0.1) was prepared using ZIF-8 as a sacrificial template, followed by etching with 0.1 M hydrochloric acid (HCl). The hollow Si was coated with dual Al layers on its inner and outer surfaces, forming the Al/H-Si-0.1/Al composite thin film anode. The hollow structure provides buffering space to accommodate volume change and facilitates the formation of a gyrification-like structure on the film anode during cycling, significantly enhancing cycling stability. Moreover, the hollow structure creates efficient diffusion pathways for lithium ions, improving ion transport. The dual Al layers provide mechanical support for the structural stability of the anode and suppress side reactions. The Al/H-Si-0.1/Al thin film anode provides a high reversible capacity of 2098 mA h g⁻¹ at 0.5 A g⁻¹. It exhibits a specific capacity of 1512 mA h g⁻¹ at 5 A g⁻¹ after 300 cycles, achieving a capacity retention of 94.56 %.</div></div>","PeriodicalId":18240,"journal":{"name":"Materials Science in Semiconductor Processing","volume":"196 ","pages":"Article 109644"},"PeriodicalIF":4.2,"publicationDate":"2025-05-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143911877","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Characterization and properties of polypyrrole modified ZnIn2S4/TiO2/Ti photoanode in photocatalytic fuel cell","authors":"Yunlan Xu,&nbsp;Jiaxin Mou,&nbsp;Lin Dong,&nbsp;Qingmei Qiao,&nbsp;Dengjie Zhong","doi":"10.1016/j.mssp.2025.109635","DOIUrl":"10.1016/j.mssp.2025.109635","url":null,"abstract":"<div><div>The performance of photocatalytic fuel cell (PFC) depends on photoanode, which is the key to generate photoexcited carriers and degrade organic wastes. In this study, ZnIn₂S₄ nano-bandgap semiconductor and polypyrrole were used to modify TiO₂ to prepare polypyrrole/ZnIn₂S₄/TiO₂/Ti photoanode to increase its photo-response range and the separation of photoexcited carriers. The PFC with polypyrrole/ZnIn₂S₄/TiO₂/Ti photoanode and copper cathode was built to degrade RhB and generate electricity. The RhB removal rate, open-circuit voltage, short-circuit current density, and maximum power density of the photocatalytic fuel cell were 94.6 % (1 h), 0.47 V, 0.23 mA cm⁻² and 21.11 μW cm⁻², respectively. The improvement of PFC performance is attributed to the good visible-light responsive properties of polypyrrole/ZnIn₂S₄.The presence of polypyrrole acts as both an electron donor and a hole acceptor, which provides an ideal pathway for the separation and transmission of photogenerated carriers. The synergistic effect of polypyrrole, ZnIn₂S₄ and TiO₂ eventually increases the photocatalytic ability of the PFC. This research can offer reference for the study of TiO₂-based efficient visible light responsive PFC.</div></div>","PeriodicalId":18240,"journal":{"name":"Materials Science in Semiconductor Processing","volume":"195 ","pages":"Article 109635"},"PeriodicalIF":4.2,"publicationDate":"2025-05-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143912197","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}