Materials Science in Semiconductor Processing最新文献

{"title":"Investigation of self-selective RRAM based on V/ITO structure with rapid thermal annealed ITO for synapse emulation","authors":"Haoyu Xu ,&nbsp;He Liu ,&nbsp;Chenming Dong ,&nbsp;Chunbo Li ,&nbsp;Wei Mi ,&nbsp;Di Wang ,&nbsp;Linan He ,&nbsp;Liwei Zhou ,&nbsp;Jinshi Zhao","doi":"10.1016/j.mssp.2024.109112","DOIUrl":"10.1016/j.mssp.2024.109112","url":null,"abstract":"<div><div>This paper focuses on the investigation of V/ITO (O₂ Rapid Thermal Annealing)-based Self-Selective Resistive Random-Access Memory (RRAM) device. In this study, the natural oxidation of Vanadium top electrode and the rapid thermal annealing (RTA) process greatly simplified the device fabrication process. The VO₂-based Selector, formed by the natural oxidation of the Vanadium electrode, effectively suppresses current and is directly integrated with the ITO layer, eliminating the need for additional serial Selector. The oxygen content of the ITO film is significantly increased by the RTA process, enabling the previously conductive ITO material to be used as the RRAM insulating layer without the need for additional deposition of insulating layer. This V/ITO (O₂ RTA) structure not only exhibits highly uniform resistance distributions (σ/μ&lt;2.8 %) and endurance stability (10000 cycles), but also effectively simulates synaptic plasticity, exhibiting both short-term and long-term memory behaviors. Notably, potentiation and depression characteristics are displayed by the device when continuous pulse voltage is applied. These advancements underscore the innovation and applicability of RTA-treated ITO films in next-generation memory technologies.</div></div>","PeriodicalId":18240,"journal":{"name":"Materials Science in Semiconductor Processing","volume":"186 ","pages":"Article 109112"},"PeriodicalIF":4.2,"publicationDate":"2024-11-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142651324","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Low-temperature photo imageable dielectric for redistribution layers in advanced packaging application","authors":"Shie-Ping Chang ,&nbsp;Zih-I Chuang ,&nbsp;Yun-Jung Wu ,&nbsp;E-Ming Ho ,&nbsp;Yuan-Chiu Huang ,&nbsp;Kuan-Neng Chen","doi":"10.1016/j.mssp.2024.109083","DOIUrl":"10.1016/j.mssp.2024.109083","url":null,"abstract":"<div><div>This study investigates the low-temperature photo imageable dielectric (LT-PID) as a next-generation material for redistribution layers (RDLs) in advanced packaging applications, with a focus on high-performance computing (HPC) and Artificial Intelligence (AI). LT-PID provides several critical advantages, including exceptionally low curing shrinkage, superior adhesion to key substrates such as silicon (Si), silicon oxide (SiO_x), silicon nitride (SiN_x), and copper (Cu), and robust thermal stability at lower processing temperatures. These properties make LT-PID an excellent candidate for enhancing the mechanical stability and reliability of fine-pitch interposers, a crucial requirement for heterogeneous integration in advanced packaging technologies. In addition, the optimization of lithography and plasma descum processes has shown that LT-PID contributes to improved contact resistance and uniform surface morphology. The use of O₂/SF₆ plasma descum significantly reduces via-bottom residue, further enhancing the electrical performance of Cu interconnects.</div></div>","PeriodicalId":18240,"journal":{"name":"Materials Science in Semiconductor Processing","volume":"186 ","pages":"Article 109083"},"PeriodicalIF":4.2,"publicationDate":"2024-11-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142650746","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Numerical simulation of novel stepped hybrid bonding interface using finite element analysis","authors":"Wentao Ni ,&nbsp;Can Sheng ,&nbsp;Bo Zhao ,&nbsp;Zhiqiang Tian ,&nbsp;Min Chen ,&nbsp;Shizhao Wang ,&nbsp;Gai Wu","doi":"10.1016/j.mssp.2024.109082","DOIUrl":"10.1016/j.mssp.2024.109082","url":null,"abstract":"<div><div>3D integration using advanced packaging and high-density chip stacking technologies has been seen as a key technological breakthrough to meet the market demand in the post-Moore era. In recent years, hybrid bonding (HB) has been regarded as a key technology for realizing high-density packaging due to its advantages such as smaller bonding space and faster electrical signal transmission. In this paper, a novel copper/polymer hybrid bonding structure is proposed, which can realize a stepped periodic bonding interface that has higher bonding strength compared with the traditional bonding interface and can effectively resist the interface failure caused by shear. The peeling stress of the bonding interface under different geometries, material parameters and process conditions is derived and compared by numerical simulation, and the risk of debonding is evaluated. It is shown that the novel structure can realize higher shear strength bonding within a wide window of process parameters.</div></div>","PeriodicalId":18240,"journal":{"name":"Materials Science in Semiconductor Processing","volume":"186 ","pages":"Article 109082"},"PeriodicalIF":4.2,"publicationDate":"2024-11-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142651345","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Development of cost-effective diphenylamine substituted hole transporting materials for organic and perovskite solar cells","authors":"Hira Naz ,&nbsp;Muhammad Adnan ,&nbsp;Zobia Irshad ,&nbsp;Riaz Hussain ,&nbsp;Hany W. Darwish ,&nbsp;Junaid Yaqoob","doi":"10.1016/j.mssp.2024.109089","DOIUrl":"10.1016/j.mssp.2024.109089","url":null,"abstract":"<div><div>In recent years, material developments have continued to increase the performances of organic and perovskite solar cells (PSCs). Therefore, herein, we designed (HRN1-HRN11) and characterized eleven new hole transport materials (HTM) for PSCs. A systematic investigation has been conducted to investigate the optoelectrical characteristics of these HTMs. The optical characteristics and structure of these modeled HTMs have been analyzed using density functional theory (DFT) and time-dependent (TD-DFT). Ionization potential, electron density difference (EDD), electron and hole reorganizational energies, charge transfer analysis, transition density matrix, and molecular electrostatic potential analysis were performed to investigate the potential of these designed series (HRN1-HRN11) for PSCs. In comparison to the synthetic reference molecule (HRN), which has a band gap of 3.64 eV and a wavelength of 388.69 nm, the newly developed compounds (HRN1-HRN11) show promising optoelectronic qualities with much lower energy gaps (up to 2.01 eV) and absorbed maximum absorption wavelength (940.99 nm). Together with their excellent hole and electron transport capabilities, improved open-circuit voltage values of 1.06–1.34 eV are calculated. The acceptor and donor regions of HRN2, HRN7, and HRN1 exhibit great charge mobility and have the lowest electron reorganization energy. HRN9 has the greatest reorganization energy of hole (<em>λ</em>_h) value among all designed molecules. The work emphasizes designing suitable photovoltaic materials to produce highly efficient solar cell devices.</div></div>","PeriodicalId":18240,"journal":{"name":"Materials Science in Semiconductor Processing","volume":"186 ","pages":"Article 109089"},"PeriodicalIF":4.2,"publicationDate":"2024-11-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142651322","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Highly efficient CoAl-LDH/(110) facet-exposed BiOBr catalysts: Promotional effect of Z-type heterojunction and oxygen vacancies in photocatalytic ciprofloxacin degradation","authors":"Shijie Yu,&nbsp;Heng Zhang,&nbsp;Dongfang Wu","doi":"10.1016/j.mssp.2024.109105","DOIUrl":"10.1016/j.mssp.2024.109105","url":null,"abstract":"<div><div>Photocatalysis has received extensive attention as a sustainable technology. Herein, a 2D/2D CoAl-LDH/(110) facet-exposed BiOBr Z-type heterojunction photocatalyst enriched with oxygen vacancies (OVs) and Lewis acid sites was prepared by deposition-precipitation method. Results show that the removal of ciprofloxacin by the optimal heterojunction achieves 88 % within 10 min and 98.6 % within 95 min under visible light. Characterization and DFT calculation reveal that CoAl-LDH induces high-energy (110) crystal plane exposure of BiOBr, resulting in the generation of surface OVs and Lewis acid sites. OVs contribute to the adsorption of dissolved oxygen in water, thereby facilitating the generation of •O₂⁻. And Bi^(3−x)+ Lewis acid sites promote the adsorption and degradation of reactant molecules. The charge transfer recombination mechanism of the heterojunction enhances the utilization of photogenerated electrons and holes, improving the catalyst photostability. This work provides a simple method for constructing efficient and stable Z-type heterojunctions with defects for photocatalytic water treatment.</div></div>","PeriodicalId":18240,"journal":{"name":"Materials Science in Semiconductor Processing","volume":"186 ","pages":"Article 109105"},"PeriodicalIF":4.2,"publicationDate":"2024-11-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142650630","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"High response acetone sensor with ppb detection based on Pd-Pt/ZnO nanoflowers in-situ grown on planar substrates","authors":"Yanhu Li ,&nbsp;Mei Chen ,&nbsp;Linghong Xue ,&nbsp;Xu Li ,&nbsp;Qingji Wang","doi":"10.1016/j.mssp.2024.109100","DOIUrl":"10.1016/j.mssp.2024.109100","url":null,"abstract":"<div><div>Metal oxide semiconductor (MOS) sensor, one of the most widely used gas sensors, faces significant challenges in achieving lower detection limit. Addressing this issue, the utilization and strategic design of bimetallic catalysts present a promising avenue. In this paper, Pd-Pt was in-situ grown on ZnO nanoflowers directly prepared on planar substrate and a sensor for detecting acetone was developed. The test results reveal that the Pd-Pt/ZnO nanoflowers sensor exhibits a remarkable 107.6 response to 100 ppm acetone at 350 °C, while presenting a rapid response (15s). Moreover, this sensor demonstrates excellent capability in detecting acetone at concentrations as low as 1 ppb, showcasing impressive gas-sensing performance. The response of the sensor to 100 ppm acetone is twice that of ethanol at the same concentration. The exceptional performance of the sensor results from its distinctive nanoflower structure and the catalytic effect of the Pd-Pt, which offers an extensive surface area and enhances the rate of redox reaction for gas molecules. This in-situ grown method has great potential for improving the gas-sensing performance in gas sensor.</div></div>","PeriodicalId":18240,"journal":{"name":"Materials Science in Semiconductor Processing","volume":"186 ","pages":"Article 109100"},"PeriodicalIF":4.2,"publicationDate":"2024-11-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142651323","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Pr3+ ions activated TiO2 nanoparticles as electron transport layer for copper based (CH3NH2)2CuBr4 perovskites solar cells","authors":"R. Vishwanath ,&nbsp;R. Ranjith ,&nbsp;K. Munirathnam ,&nbsp;J. Shim ,&nbsp;P.C. Nagajyothi ,&nbsp;Sabah Ansar ,&nbsp;V. Manjunath","doi":"10.1016/j.mssp.2024.109093","DOIUrl":"10.1016/j.mssp.2024.109093","url":null,"abstract":"<div><div>In emerging organic-inorganic perovskite solar cells (PSCs), the role of efficient electron transport layers (ETLs) is critical for electron transfer and hole blocking. TiO₂ is one of the widely reported ETLs but limits the performance of the devices exhibiting restricted electron mobility and numerous defect states. The process of doping rare earth ions has been an effective approach in improving the electronic and optical properties of TiO₂ for enhanced efficiency of PSCs. The present work studies the effect of praseodymium (Pr³⁺) doped TiO₂ prepared via sol-gel technique as electron transport layers for lead-free perovskite solar cells. The X-ray diffraction (XRD) and diffuse reflectance spectroscopy (DRS) studies showed that the crystallite size and bandgap of the particles reduced as a function of Pr³⁺ doping concentration. The X-ray photoelectron spectroscopy (XPS) analysis of the samples inferred that Pr³⁺ ions majorly remained on the TiO₂ surface. Copper-based (CH₃NH₂)₂CuBr₄ perovskites were synthesized by solution method as an active layer for the solar cells. XRD, FTIR (Fourier Transform Infrared Spectroscopy) and XPS analysis confirmed the formation of 2D-perovskite phase of the samples. The scanning electron microscopy (SEM) analysis of the perovskites revealed well crystalline orthorhombic structures. Current-voltage measurements were carried out to study better passivation properties with rare-earth doping of the ETLs and was found to be most enhanced for 0.07 Pr³⁺ concentration. Electro-chemical Impedance Spectroscopy (EIS) studies of the solar cells showed a reduced interface recombination and enhance charge transfer properties as a function of rare-earth dopant concentration. Further, the fabricated perovskite solar cells showcased better performance with xPr³⁺:TiO₂ ETLs and the maximum efficiency of ∼1.25 % was obtained for TiO₂: 0.07 Pr³⁺.</div></div>","PeriodicalId":18240,"journal":{"name":"Materials Science in Semiconductor Processing","volume":"186 ","pages":"Article 109093"},"PeriodicalIF":4.2,"publicationDate":"2024-11-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142651321","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Exploring the structural and electronic properties of N-doped Ti2C MXenes for novel applications in advanced materials and devices: A DFT study","authors":"Bilal Ahmed ,&nbsp;Muhammad Bilal Tahir ,&nbsp;Akmal Ali ,&nbsp;Muhammad Sagir","doi":"10.1016/j.mssp.2024.109091","DOIUrl":"10.1016/j.mssp.2024.109091","url":null,"abstract":"<div><div>MXenes, a category of two-dimensional transition metal carbides and nitrides, have attracted significant interest owing to their distinctive characteristics. This study utilizes Density Functional Theory (DFT) to examine the effects of nitrogen doping on the structural and electrical properties of Ti₂C MXenes. N-doping induces significant alterations in the lattice structure and electronic properties, culminating in an elevated density of states at the Fermi level, indicating improved conductivity. Furthermore, optical characteristics such as reflectivity and loss function are affected by N-doping, resulting in a shift in the intensity of the reflectivity peak. The alterations provide N-doped Ti₂C MXenes viable candidates for advanced applications in energy storage, catalysis, and electronic devices, facilitating future empirical and theoretical investigations in MXene-based materials.</div></div>","PeriodicalId":18240,"journal":{"name":"Materials Science in Semiconductor Processing","volume":"186 ","pages":"Article 109091"},"PeriodicalIF":4.2,"publicationDate":"2024-11-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142650622","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Photovoltaic response promoted via intramolecular charge transfer in triphenylpyridine core with small acceptors: A DFT/TD-DFT study","authors":"Muhammad Adnan Asghar ,&nbsp;Aiman Jabbar ,&nbsp;Sehar Nadeem ,&nbsp;Iqra Shafiq ,&nbsp;Nayab Tahir ,&nbsp;Khalid Abdullah Alrashidi","doi":"10.1016/j.mssp.2024.109086","DOIUrl":"10.1016/j.mssp.2024.109086","url":null,"abstract":"<div><div>Currently, A−π−A configured molecules (<strong>TTP1-TTP6</strong>) were designed from the reference compound (<strong>TPPR</strong>) by modifying the terminal acceptors for photovoltaic materials. Density functional theory (DFT) and time-dependent density functional theory (TD-DFT) using the M06/6-311G(d,p) functional were employed to analyze the photonic and electronic properties of the newly designed derivatives. Various analyses; frontier molecular orbitals (FMOs), density of states (DOS), absorption spectra (<em>λ</em>_max), transition density matrix (TDM), binding energy (<em>E</em>_b), hole-electron and open circuit voltage (<em>V</em>_oc) were performed to explore the photovoltaic properties of triphenylpyridine based compounds. The structural modulation with acceptor moieties significantly tuned their HOMO and LUMO levels, resulting in reduced band gaps (2.833–3.037 eV). They also exhibited broader absorption spectra (<em>λ</em>_max) ranging from 482.560 to 514.756 nm as compared to the reference compound (486.289 nm). Notably, <strong>TPP3</strong> showed the good photovoltaic response as it displayed the least energy gap (2.833 eV) with lower binding energy (0.415 eV) and bathochromic shift (512.798 nm) in absorption spectra as compared to all other derivatives. Beside this, a comparative study with spiro-OMeTAD and P3HT standard hole transport materials illustrated that these materials can also be utilized as effective photovoltaic materials.</div></div>","PeriodicalId":18240,"journal":{"name":"Materials Science in Semiconductor Processing","volume":"186 ","pages":"Article 109086"},"PeriodicalIF":4.2,"publicationDate":"2024-11-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142650621","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Engineering mitoxantrone-conjugated graphene quantum dots for advanced photoluminescent cancer therapy","authors":"Kenza Elkabiri ,&nbsp;Hala Ouarrad ,&nbsp;Lalla Btissam Drissi","doi":"10.1016/j.mssp.2024.109066","DOIUrl":"10.1016/j.mssp.2024.109066","url":null,"abstract":"<div><div>This study investigates the optoelectronic and photoluminescence properties of graphene quantum dots (GQDs) conjugated with the Mitoxantrone (MTX) drug, aiming to enhance cancer drug delivery systems. Using DFT and TDDFT numerical simulations, we examined the impact of GQD size and MTX coupling positions (C–C, C–O, and C–N bonds) on the physical behaviour of DSGQDs. Our study confirm that all structures are energetically stable, as evidenced by the absence of negative frequencies in the IR spectra. Besides, C–O conjugated structures are found to be the most chemically stable as it was shown by global reactivity indices results. Functionalization leads to a reduced H–L energy gap, depending on the MTX coupling position and GQD size. Importantly, the optical properties of GQDs remain largely unaffected by conjugation, maintaining their stability as drug carriers. Larger GQD systems retained stable absorption and photoluminescence characteristics within the near-infrared (NIR) range, while smaller systems exhibited a shift from the visible to the NIR range. Notably, the C₄₈H₁₈ + MTX system with C–O bonding demonstrated superior photoluminescence performance confirmed by the small line width results. These results suggest that GQDs conjugated with MTX hold significant potential for targeted cancer therapy, with minimal interaction between the drug and the GQD host, thereby reducing toxicity risks.</div></div>","PeriodicalId":18240,"journal":{"name":"Materials Science in Semiconductor Processing","volume":"186 ","pages":"Article 109066"},"PeriodicalIF":4.2,"publicationDate":"2024-11-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142650629","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}