Materials Science in Semiconductor Processing最新文献

{"title":"Regulating oxygen vacancies to achieve stable non-volatile switching characteristics and neuromorphic computing in a-Ga2O3 based memristors","authors":"Yuanyuan Zhu ,&nbsp;Xin Wang ,&nbsp;Miao Zhang ,&nbsp;Yunfei Zhang ,&nbsp;Shuo Liu ,&nbsp;Hongjun Wang","doi":"10.1016/j.mssp.2025.110056","DOIUrl":"10.1016/j.mssp.2025.110056","url":null,"abstract":"<div><div>Gallium oxide has attracted considerable interest as a promising resistive switching (RS) layer for memristors, owing to its wide bandgap, high breakdown electric field, and excellent thermal stability. However, practical adoption remains hindered by challenges such as relatively low switching ratio and insufficient cycling stability, which limit device performance and reliability. Herein, amorphous Ga₂O₃ (a-Ga₂O₃) films serve as the RS layer to construct the memristors, where oxygen vacancies are precisely regulated to enhance the switching performance. The W/a-Ga₂O₃/Pt device fabricated with an argon-to-oxygen ratio of 40:10 outperforms those made with other ratios in RS behaviors, demonstrating a larger switching window (∼10³), superior retention (10⁴ s), faster response times (90 μs), high stability, and concentrated distributions of switching voltages. Furthermore, we elucidate the electrical transport mechanisms and conductive filaments (CFs) models responsible for the enhanced switching performance. More encouragingly, the a-Ga₂O₃ device achieved up to 98.67 % accuracy on the Mixed National Institute of Standards and Technology image recognition task. This work provides an in-depth exploration of a-Ga₂O₃-based memristors, offering a promising avenue for switching materials in storage and neuromorphic computing applications.</div></div>","PeriodicalId":18240,"journal":{"name":"Materials Science in Semiconductor Processing","volume":"201 ","pages":"Article 110056"},"PeriodicalIF":4.6,"publicationDate":"2025-09-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145045472","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Non-volatile, high on/off ratio, durable memristor devices based on ScAlN for artificial synapse","authors":"Cong Han ,&nbsp;Haiming Qin ,&nbsp;Rui Hu ,&nbsp;Weijing Shao ,&nbsp;Hanbing Fang ,&nbsp;Hao Zhang ,&nbsp;Xinpeng Wang ,&nbsp;Yu Wang ,&nbsp;Yi Liu ,&nbsp;Yi Tong","doi":"10.1016/j.mssp.2025.110025","DOIUrl":"10.1016/j.mssp.2025.110025","url":null,"abstract":"<div><div>Sc-doped AlN has attracted a large amount of attention due to the discovery of ferroelectricity. The co-existing resistive characteristic also plays an important role in this material. However, few studies on memristors focus on it, especially in the field of neuromorphic computing. This study presents the construction of MIM-structured memristors utilizing Sc-doped AlN alloy material as the insulating layer. The memory attributes of the Cu/Sc_0.2Al_0.8N/Pt/Ti device are presented for neuromorphic systems. This device demonstrates excellent resistive switching performance characterized by consistent <em>I-V</em> cycles above 200, a substantial ON/OFF ratio surpassing 10⁶ %, prolonged retention time exceeding 10,000 s, and favorable device uniformity. By adjusting the compliance current, this device demonstrates outstanding attributes of regulated progressive switching and multi-tiered resistance states. The switching and conduction mechanism is ascribed to defect-assisted conduction by using physical models and the analysis of temperature-dependent <em>I-V</em> curves. Furthermore, synaptic activities, including long-term potentiation (LTP), long-term depression (LTD), and paired-pulse facilitation (PPF), are effectively replicated. The MNIST handwritten digits image recognition task was examined concerning the linearity of potential and depression.</div></div>","PeriodicalId":18240,"journal":{"name":"Materials Science in Semiconductor Processing","volume":"201 ","pages":"Article 110025"},"PeriodicalIF":4.6,"publicationDate":"2025-09-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145046842","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Tuning linear and nonlinear optical properties of Se70Te20Sb10 thin films via 3 MeV proton irradiation for photonic applications","authors":"Thabang K. Matabana ,&nbsp;Cosmas M. Muiva ,&nbsp;Morgan Madhuku ,&nbsp;Neeraj Mehta ,&nbsp;Lawrence K. Benjamin ,&nbsp;Thobega Mosimanegape ,&nbsp;Dineo P. Sebuso ,&nbsp;Conrad B. Tabi","doi":"10.1016/j.mssp.2025.110040","DOIUrl":"10.1016/j.mssp.2025.110040","url":null,"abstract":"<div><div>This study aims to investigate how 3 MeV proton irradiation influences the structural, linear, and nonlinear optical properties of Se₇₀Te₂₀Sb₁₀ thin films, with the goal of assessing their potential for photonic device applications. Thin films were thermally deposited by electron-beam evaporation and exposed to proton fluences ranging from 5 × 10¹³ to 5 × 10¹⁶ ions/cm². X-ray diffraction and Field Emission Scanning Electron Microscope (FESEM) confirmed the amorphous structure of the films across all fluences. while AFM revealed a substantial increase in surface roughness from 40.5 nm (as-grown) to 386.7 nm at the highest fluence, indicating irradiation-induced morphological reorganization. Optical characterization showed that transmittance and reflectance decreased with increasing fluence, while the absorption coefficient (α) in the 1.5–2.5 eV range increased. The optical band gap (E_g) exhibited a non-linear dependence, decreasing from 1.298 eV (as-grown) to 1.281 eV at 5 × 10¹⁴ ions/cm² then rising to 1.389 eV at 5 × 10¹⁵ ions/cm², and then reducing again at the highest fluence. Urbach energy (Eu) varied complementarily, reflecting disorder–recovery dynamics. The third-order nonlinear susceptibility χ³ peaked at 1.803 × 10⁻¹¹ esu, with corresponding enhancement in the nonlinear refractive index n₂. Dielectric functions and energy loss spectra further confirmed fluence-dependent changes in electronic response. These findings demonstrate that Sb-stabilized Se–Te alloys exhibit tunable optical properties under proton irradiation, making them promising candidates for radiation-hardened optoelectronic and photonic devices.</div></div>","PeriodicalId":18240,"journal":{"name":"Materials Science in Semiconductor Processing","volume":"201 ","pages":"Article 110040"},"PeriodicalIF":4.6,"publicationDate":"2025-09-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145045468","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Gallium arsenide-enabled spatial-polarization-frequency multiplexing metasurface for terahertz encrypted communication","authors":"Mingliang Zhao ,&nbsp;You Li ,&nbsp;Xunjun He ,&nbsp;Ying Zhang","doi":"10.1016/j.mssp.2025.110042","DOIUrl":"10.1016/j.mssp.2025.110042","url":null,"abstract":"<div><div>Robust information security is a fundamental imperative for all facets of the modern digital society. To address this critical need, we introduce a spatial-polarization-frequency multiplexing metasurface enabled by gallium arsenide (GaAs) for terahertz encrypted communication in this paper. The incorporation of GaAs and vanadium dioxide (VO₂) as active materials enables independent control for 16 channels. In detail, GaAs transitions to a low-resistivity state under optical pumping. The metasurface independently <strong>manipulates incident waves</strong> at 0.76 THz and 1.32 THz, each with selectable <em>x</em>-LP or <em>y</em>-LP, propagating along ± <em>z</em> directions to generate 8 channels. Without optical pumping, GaAs transitions to a high-resistivity state. While VO₂ is in the insulating state, the metasurface independently manipulates incident 0.9 THz waves with <em>x</em>-LP and <em>y</em>-LP polarization propagating along ± <em>z</em> directions, yielding 4 channels. While VO₂ is in the metallic state, the metasurface reconfigures its phase distribution along ± <em>z</em> directions respectively, generating an additional 4 channels. Thus, these 16 channels can generate distinct holographic images representing alphanumeric characters (A-F, 0–9), each corresponding to a unique Base-16 encoding symbol. During communication, the receiver must utilize the unique metasurface as a physical key for successful decryption. In addition, decryption strictly requires predetermined conditions including specific incident direction, operating frequency, polarization signature, and phase transition state of the active materials. These combined requirements act as multiple locks, significantly boosting the security of the optical communication approach.</div></div>","PeriodicalId":18240,"journal":{"name":"Materials Science in Semiconductor Processing","volume":"201 ","pages":"Article 110042"},"PeriodicalIF":4.6,"publicationDate":"2025-09-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145045466","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Adsorption and sensing properties of Pt-In2Se3 monolayer toward thermal runaway gases (H2, CO, CO2, CH4, C2H4) in LIBs: A DFT study","authors":"Jingzhi Zhao ,&nbsp;Yongqing Qian ,&nbsp;Zihan Xu ,&nbsp;Xiaoxing Zhang ,&nbsp;Beibei Xiao ,&nbsp;Dachang Chen","doi":"10.1016/j.mssp.2025.110038","DOIUrl":"10.1016/j.mssp.2025.110038","url":null,"abstract":"&lt;div&gt;&lt;div&gt;The adsorption and sensing properties of pristine α-In&lt;sub&gt;2&lt;/sub&gt;Se&lt;sub&gt;3&lt;/sub&gt; and Pt doped In&lt;sub&gt;2&lt;/sub&gt;Se&lt;sub&gt;3&lt;/sub&gt; monolayers for five thermal runaway gases (H&lt;sub&gt;2&lt;/sub&gt;, CO, CO&lt;sub&gt;2&lt;/sub&gt;, CH&lt;sub&gt;4&lt;/sub&gt;, C&lt;sub&gt;2&lt;/sub&gt;H&lt;sub&gt;4&lt;/sub&gt;) have been investigated using density functional theory (DFT). The adsorption energy, charge transfer (&lt;em&gt;Q&lt;/em&gt;&lt;sub&gt;&lt;em&gt;T&lt;/em&gt;&lt;/sub&gt;), energy density of states, work function, recovery time and sensing response were compared to elucidate the gas adsorption behavior and electronic properties. The results indicate that, when Pt replaces doping the In&lt;sub&gt;2&lt;/sub&gt;Se&lt;sub&gt;3&lt;/sub&gt;(↑) surface, the phase state of α-In&lt;sub&gt;2&lt;/sub&gt;Se&lt;sub&gt;3&lt;/sub&gt; changes, turning into a more stable β phase. However, in the Pt-In&lt;sub&gt;2&lt;/sub&gt;Se&lt;sub&gt;3&lt;/sub&gt;(↓) surface, no phase transition was observed in α-In&lt;sub&gt;2&lt;/sub&gt;Se&lt;sub&gt;3&lt;/sub&gt;. And for the adsorption of H&lt;sub&gt;2&lt;/sub&gt;, CO and C&lt;sub&gt;2&lt;/sub&gt;H&lt;sub&gt;4&lt;/sub&gt;, the introduction of Pt atoms significantly enhances the adsorption energies. Additionally, the absolute value of the integral crystal orbital Hamiltonian population (ICOHP) is the highest for CO adsorbed on Pt doped In&lt;sub&gt;2&lt;/sub&gt;Se&lt;sub&gt;3&lt;/sub&gt; monolayer systems, with values of −2.73 and −2.77 for the upward and downward polarization directions, respectively. This indicates a stronger interaction between CO and Pt atoms, suggesting an enhanced potential for chemical bond formation at Pt sites. The adsorption of gas molecules has shown pronounced differences in its impact on the work function. The Pt-In&lt;sub&gt;2&lt;/sub&gt;Se&lt;sub&gt;3&lt;/sub&gt;(↑) surface exhibits considerable sensitivity to CO and CH&lt;sub&gt;4&lt;/sub&gt;, resulting in the most significant work function shift (work function shift of CO is 0.14 eV; work function shift of C&lt;sub&gt;2&lt;/sub&gt;H&lt;sub&gt;4&lt;/sub&gt; is 0.3 eV), while its response to H&lt;sub&gt;2&lt;/sub&gt;, CO&lt;sub&gt;2&lt;/sub&gt; and CH&lt;sub&gt;4&lt;/sub&gt; is nearly negligible. Meanwhile, the adsorption of C&lt;sub&gt;2&lt;/sub&gt;H&lt;sub&gt;4&lt;/sub&gt; on the Pt-In&lt;sub&gt;2&lt;/sub&gt;Se&lt;sub&gt;3&lt;/sub&gt;(↓) yields a significant work function shift of 0.49 eV, further indicating the material's potential for selective detection of specific gases. A comprehensive analysis of adsorption energy and work function further reveals that the Pt-In&lt;sub&gt;2&lt;/sub&gt;Se&lt;sub&gt;3&lt;/sub&gt;(↑) surface exhibits the most pronounced gas-sensing properties toward CO (adsorption energy of 1.26 eV and work function shift to 6.01 eV), while the Pt-In&lt;sub&gt;2&lt;/sub&gt;Se&lt;sub&gt;3&lt;/sub&gt;(↓) surface shows significant sensitivity to both CO (adsorption energy of 1.34 eV and work function shift to 5.31 eV) and C&lt;sub&gt;2&lt;/sub&gt;H&lt;sub&gt;4&lt;/sub&gt; (adsorption energy of 1.05 eV and work function shift to 5.25 eV). When both sensitivity and recovery characteristics are taken into account, Pt-In&lt;sub&gt;2&lt;/sub&gt;Se&lt;sub&gt;3&lt;/sub&gt; monolayers demonstrate a remarkable negative sensing response towards C&lt;sub&gt;2&lt;/sub&gt;H&lt;sub&gt;4&lt;/sub&gt;, with values of −99.61 % for the In&lt;sub&gt;2&lt;/sub&gt;Se&lt;sub&gt;3&lt;/sub&gt;(↑) surface and −96.87 % for the In&lt;sub&gt;2&lt;/sub&gt;Se&lt;sub&gt;3&lt;/sub&gt;(↓) surface. Furth","PeriodicalId":18240,"journal":{"name":"Materials Science in Semiconductor Processing","volume":"201 ","pages":"Article 110038"},"PeriodicalIF":4.6,"publicationDate":"2025-09-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145046824","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Construction of AgI-BiVO4-AgVO3/PAN ternary heterojunction composite for enhanced visible-light photocatalytic degradation performance","authors":"Jiahui Liu ,&nbsp;Haiou Liang ,&nbsp;Xiaoye Fan ,&nbsp;Jie Bai","doi":"10.1016/j.mssp.2025.110049","DOIUrl":"10.1016/j.mssp.2025.110049","url":null,"abstract":"<div><div>The AgVO₃/PAN was fabricated using electrospinning and hydrothermal reaction process. Utilizing the ion exchange method, AgVO₃ was further transformed into a BiVO₄/AgI composite system, resulting in the construction of a ternary heterojunction AgI-BiVO₄-AgVO₃/PAN composite catalyst with a hierarchical structure. Characterization analysis confirmed that the material exhibited a significantly enhanced visible light capture efficiency. In the rhodamine B photodegradation experiment, the composite catalyst demonstrated a first-order kinetic rate constant of 0.01055 min⁻¹, which was 5.3, 4.0, and 2.6 times higher than that of the single-component BiVO₄/PAN, AgVO₃/PAN, and AgI/PAN catalytic systems, respectively. After six experimental cycles, the degradation rate remained at 80.4 %, and the flexible fiber carrier exhibited excellent reusability. Energy band structure analysis revealed the formation of a dual Z-type carrier transport mechanism between AgVO₃-BiVO₄-AgI. This synergistic effect endows the composite system with an excellent redox potential distribution in the visible light region, thereby imparting the material with superior photocatalytic performance and universal degradation capability.</div></div>","PeriodicalId":18240,"journal":{"name":"Materials Science in Semiconductor Processing","volume":"201 ","pages":"Article 110049"},"PeriodicalIF":4.6,"publicationDate":"2025-09-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145045467","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Construction of BiOI/UiO-66(Ce/Fe) S-scheme heterojunction for enhancing photocatalytic activity","authors":"Rongrong Yu ,&nbsp;Jingjing Wang ,&nbsp;Xinyu Zhi ,&nbsp;Danyi Yang ,&nbsp;Yongqi Zhao ,&nbsp;Guifeng Chen ,&nbsp;Chengchun Tang ,&nbsp;Yi Fang","doi":"10.1016/j.mssp.2025.110033","DOIUrl":"10.1016/j.mssp.2025.110033","url":null,"abstract":"<div><div>With growing concerns about antibiotic contamination in water environments, developing efficient photocatalysts for tetracycline (TC) degradation has become imperative. In this study, a novel nanoflower-like BiOI/UiO-66(Ce/Fe) S-scheme heterojunction photocatalyst was developed for efficient TC degradation under visible light. Experimental evaluations revealed that the optimized 0.05-Bi/U(Ce/Fe) sample achieved 99.5 % TC degradation efficiency, maintaining 88.8 % of its initial activity after four consecutive cycles. The superior photocatalytic activity arises from three synergistic mechanisms: Fe³⁺ doping modulates the band structure to broaden visible-light absorption, while the synergistic effect of Ce⁴⁺/Ce³⁺ and Fe³⁺/Fe²⁺ redox pairs optimizes charge transport. The internal electric field at the BiOI/UiO-66(Ce/Fe) heterojunction enhances charge separation while maximizing the redox capacity of the photocatalyst. Radical capture experiments and LC-MS analysis confirmed ·O₂⁻ and ·OH as the dominant reactive radicals, with proposed possible degradation pathways. Thus, a new synergistic strategy for designing efficient photocatalysts is proposed in this work.</div></div>","PeriodicalId":18240,"journal":{"name":"Materials Science in Semiconductor Processing","volume":"201 ","pages":"Article 110033"},"PeriodicalIF":4.6,"publicationDate":"2025-09-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145045469","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Performance optimization and mechanistic investigation of GaAs/AlGaAs-based quantum cascade detectors with multi-stage coupled structures","authors":"Mengqi Chen ,&nbsp;Yuting Wang ,&nbsp;Jie Chen ,&nbsp;Qing Hao ,&nbsp;Xin Ju","doi":"10.1016/j.mssp.2025.110035","DOIUrl":"10.1016/j.mssp.2025.110035","url":null,"abstract":"<div><div>Quantum cascade detectors (QCDs) exhibit significant application potential in the infrared to terahertz spectral range due to their intersubband transition properties. However, limitations such as interface scattering and atomic-scale structure instability in traditional cascade structures hinder the improvement of their respond performance. In this study, GaAs/AlGaAs-based QCD samples with a four-well cascade structure (FWCS) and two multi-stage coupled structures (MSCS-1 and MSCS-2) were fabricated using molecular beam epitaxy (MBE). The correlation mechanisms between the atomic-scale structure of heterojunctions and respond performance were systematically analyzed through X-ray diffraction (XRD), synchrotron radiation X-ray absorption spectroscopy (SR-XAS), and band structure simulations. XRD and XAS collectively confirmed that the heterojunction interface bond length consistency in the MBE-grown FWCS and MSCS samples achieved atomic-scale precision, with a material parameter deviation of only 0.8 % from theoretical design. Respond performance experiments and band structure simulations demonstrated that MSCS-1 and MSCS-2 achieved 3-5 orders of magnitude enhancement in dark current density and blackbody-induced response current density compared to FWCS, which attribute the multi-stage coupled structure enhances energy level coupling in the transport region, forming a miniband transport that significantly improves carrier transport efficiency. Specifically, MSCS-2 due to its optimized energy level alignment, exhibited a blackbody-induced response current density of 1.45 × 10⁻⁴ A cm⁻² under a −1 V bias and a reduced activation energy of 102 meV. This study provides critical theoretical support for the band engineering and structural design of high-performance QCDs.</div></div>","PeriodicalId":18240,"journal":{"name":"Materials Science in Semiconductor Processing","volume":"201 ","pages":"Article 110035"},"PeriodicalIF":4.6,"publicationDate":"2025-09-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145027371","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Graphene oxide/chitosan-layered double hydroxides for dye decolorization, oxygen evolution reaction and bactericidal inactivation","authors":"Kinza Asif ,&nbsp;Muhammad Imran ,&nbsp;Anum Shahzadi ,&nbsp;Farzana Jamal ,&nbsp;Sarmad Frogh Arshad ,&nbsp;Anwar Ul-Hamid ,&nbsp;Ahmed M. Fouda ,&nbsp;Muhammad Ikram","doi":"10.1016/j.mssp.2025.110030","DOIUrl":"10.1016/j.mssp.2025.110030","url":null,"abstract":"<div><div>In this research, graphene oxide (GO) and chitosan (CS) modified zinc/Aluminum (ZnAl) layered doubled hydroxide (LDH) were synthesized via co-precipitation. The research objective was to suppress the electron/hole pair recombination rate of pristine ZnAl and enhance the multifunctional effectiveness of catalytic degradation of dye, oxygen evolution reaction (OER), and antibacterial activity. Additionally, the influence of dopants on structure, morphology, and optical characteristics was characterized by advanced techniques. XRD revealed the rhombohedral structure and enhancement in crystallite size was observed with doping. TEM micrographs endorsed regularly aligned two-dimensional nanosheets with the layered assembly of GO/CS-ZnAl. Furthermore, catalysis results suggested an optimum rhodamine B (RhB) dye degradation rate of 92.0 % in a basic medium, which signifies its potential application in various environmental decontamination. Among all samples, 3 % GO/CS-ZnAl LDH revealed a lower overpotential, the lowest Tafel slope, and minimal R_ct value, suggesting the highest OER activity. Moreover, the docking studies of CS-ZnAl LDH and GO/CS-ZnAl nanocomposites bactericidal agents were conducted to investigate their potential inhibition of dihydrofolate reductase (DHFR) and deoxyribonucleic acid (DNA) gyrase enzymes in <em>S. aureus</em>.</div></div>","PeriodicalId":18240,"journal":{"name":"Materials Science in Semiconductor Processing","volume":"201 ","pages":"Article 110030"},"PeriodicalIF":4.6,"publicationDate":"2025-09-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145027372","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Non-enzymatic ultrasensitive electrochemical detection of acetaminophen in urine using novel metal-organic framework anchored graphite rod electrode","authors":"Md Wasi Ahmad ,&nbsp;Jehan Y. Al-Humaidi ,&nbsp;Km Shivangee Kushwaha ,&nbsp;Baban Dey ,&nbsp;Arup Choudhury ,&nbsp;Abdulkarim Albishri ,&nbsp;Mohammed Muzibur Rahman","doi":"10.1016/j.mssp.2025.110031","DOIUrl":"10.1016/j.mssp.2025.110031","url":null,"abstract":"<div><div>Acetaminophen (AP) is used to a large extent as a pain relief drug worldwide. Now a days AP is present in high concentrations in water resources and also found in the human blood. Therefore, it is of utmost importance to detect AP for the benefit of human health. In order to obtain low-cost and highly sensitive and selective sensors for AP detection, in the present investigation, we developed a novel free-standing electrochemical sensor. We adopted the synthesis process via a facile, mild one-step solvothermal technique and developed Ni(BPDC)MOF/GRP. Inter-connected Ni(BPDC)MOF/GRP sheets provide a large external area, huge pore volume and copious reactive spots, which show extensive interactive capacity towards AP. Block-shaped MOF-anchored GRP electrode enhances electrooxidation of adsorbed AP molecules due to superior electrocatalytic properties and electronic conductivity. As-prepared MOF hybrid rod was well characterized and analyzed by various characterization practices like FTIR, Raman spectra, XRD, XPS, BET, FESEM with energy dispersive spectrometry (EDS) mapping, and HRTEM etc. The electrochemical properties of proposed hybrid electrode studied by Cyclic Voltammetry (CV), Differential Pulse Voltammetry (DPV), impedance spectroscopy and chrono-amperometry methods. The Ni(BPDC)MOF/GRP electrode exhibited a linear detection region (LDR) from 2.5 to 100 μM, a limit of detection (LOD) of 0.056 μM and limit of quantification (LOQ) of 0.169 μM. An acceptable recovery rate ranging from 95.6 % to 104.2 % was achieved by using the proposed sensor to evaluate AP in spiked human urine serum samples. Therefore, the sensor electrode offers a simple, affordable, eco-friendly, and portable solution for AP detection.</div></div>","PeriodicalId":18240,"journal":{"name":"Materials Science in Semiconductor Processing","volume":"201 ","pages":"Article 110031"},"PeriodicalIF":4.6,"publicationDate":"2025-09-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145020052","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}