Materials Science in Semiconductor Processing最新文献

{"title":"New insights in vertical GaN-on-GaN Schottky diode by Raman, cathodoluminescence and electrical characterizations","authors":"Vishwajeet Maurya ,&nbsp;Daniel Alquier ,&nbsp;Maroun Dagher ,&nbsp;Camille Sonneville ,&nbsp;Dominique Planson ,&nbsp;Hala El Rammouz ,&nbsp;Thomas Kaltsounis ,&nbsp;Eric Frayssinet ,&nbsp;Yvon Cordier ,&nbsp;Nevine Rochat ,&nbsp;Matthew Charles ,&nbsp;Julien Buckley","doi":"10.1016/j.mssp.2025.109681","DOIUrl":"10.1016/j.mssp.2025.109681","url":null,"abstract":"<div><div>This article compares the impact of different freestanding GaN substrates on the material and electrical properties of Schottky diodes. Material characterization using cathodoluminescence and Raman spectroscopy was performed to analyze defects in the wafers. Randomly distributed clusters of dislocations were observed in one sample, whereas the other sample was free of such clusters. Schottky diodes were subsequently fabricated on these wafers and electrically characterized to investigate the influence of material characteristics on key device parameters, including barrier height, ideality factor, on-resistance, leakage current, and breakdown voltage. A lower barrier height, higher ideality factor, and lower breakdown voltage were observed in the sample with clusters.</div></div>","PeriodicalId":18240,"journal":{"name":"Materials Science in Semiconductor Processing","volume":"198 ","pages":"Article 109681"},"PeriodicalIF":4.2,"publicationDate":"2025-06-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144212662","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"High temperature resistance and wide-spectrum detection flexible photodetectors based on PbS quantum dots/Bi2S3 nanorods","authors":"Shenjiali Wang ,&nbsp;Jian Wen ,&nbsp;Luwei Feng ,&nbsp;Xiaozhan Yang","doi":"10.1016/j.mssp.2025.109738","DOIUrl":"10.1016/j.mssp.2025.109738","url":null,"abstract":"<div><div>High temperature resistance and broadband detection are crucial in the application of flexible photodetectors, and it is still challenging to achieve high quality performance using low-cost and simple fabrication methods. To widen the spectral response range and improve the photoperformance, a photoconductive PbS quantum dots (QDs)/Bi₂S₃ flexible photodetector was fabricated through physical vapor deposition and drop-coating processes on a flexible polyimide. This design is due to the excellent photoresponse of Bi₂S₃ in the ultraviolet and visible regions, and the remarkable tunability and respond of PbS QDs in the infrared band. The device has a broadband photoresponse under 365–1550 nm. The device has the maximum responsivity (<em>R</em>) of 3.59 mA/W and detectivity (<em>D∗</em>) of 4.34 × 10¹⁰ Jones under 638 nm illumination with a light intensity of 0.6 mW/cm². And the response/recovery times are 0.35 s/0.45 s. The device exhibits excellent photoperformance even after multiple bends. When bent by 55 %, the photocurrent remains over 94 % of the initial value. Compared to Bi₂S₃ devices, PbS QDs/Bi₂S₃ flexible photodetectors have a 220-fold increase in on/off ratio. Moreover, the device can operate normally at 180 °C, demonstrating excellent temperature resistance characteristics. This work offers a new approach for designing high-performance flexible electronic devices with high temperature resistance and broadband response.</div></div>","PeriodicalId":18240,"journal":{"name":"Materials Science in Semiconductor Processing","volume":"198 ","pages":"Article 109738"},"PeriodicalIF":4.2,"publicationDate":"2025-06-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144222323","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Size evolution of silver nanowires under thermal field and its application in nano-healing: A molecular dynamics study","authors":"Yu Shu ,&nbsp;Hui Wan ,&nbsp;Hao Cao ,&nbsp;Chengqun Gui ,&nbsp;Shuo Chen ,&nbsp;Deming Wang","doi":"10.1016/j.mssp.2025.109743","DOIUrl":"10.1016/j.mssp.2025.109743","url":null,"abstract":"<div><div>Laser-induced nano-healing plays a pivotal role in repairing structural defects in devices, primarily attributed to localized thermal fields generated by photothermal effects, which reduce nanogap sizes. However, the phenomenon of nanomaterial contraction into spheres under thermal fields indicates that the underlying mechanisms of nano-healing under thermal influence remain incompletely understood. This study employs molecular dynamics simulations to investigate the size evolution of silver nanowires under thermal fields, aiming to explore the effects of temperature on nanomaterial size changes and to further elucidate the mechanisms of nano-healing applications. The findings reveal that temperatures during the surface melting phase, below the melting point, promote the attainment of larger axial sizes in silver nanowires. The axial dimensions of silver nanowires are influenced not only by temperature-induced lattice spacing but also by the transport of atoms toward the central regions of end faces driven by surface melting. The study demonstrates that temperatures during the surface melting phase are more favorable for the healing of nanogaps, with higher temperatures enhancing the surface diffusion healing of nanoscale pits. These results provide valuable insights into the utilization of thermal fields for nano-healing and the subsequent repair of device defects.</div></div>","PeriodicalId":18240,"journal":{"name":"Materials Science in Semiconductor Processing","volume":"198 ","pages":"Article 109743"},"PeriodicalIF":4.2,"publicationDate":"2025-06-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144195825","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Enhanced luminescent intensity and the thermometric properties of Ag and Pd-decorated YVO4: Bi3+ nanophosphors","authors":"Lesole A. Ramolise,&nbsp;Simon N. Ogugua,&nbsp;Hendrik C. Swart,&nbsp;David E. Motaung","doi":"10.1016/j.mssp.2025.109745","DOIUrl":"10.1016/j.mssp.2025.109745","url":null,"abstract":"<div><div>In this study, we report on the synthesis and comprehensive characterization of Y_0.99VO₄:0.01Bi³⁺ nanophosphors decorated with different concentrations of Ag and Pd nanoparticles. X-ray diffraction analysis confirmed that all the samples crystallized in the pure tetragonal YVO₄ phase. Field emission scanning electron microscopy images revealed monodispersed spherical particles with uniform size distribution. Photoluminescent excitation spectra exhibited a broad band with a maximum of 306 nm, while the emission spectra displayed a broad yellow band at 567 nm. Notably, the effects of noble metal decorations were observed, with both 1 mol% Ag/Y_0.99VO₄:0.01Bi³⁺ and 0.5 mol% Pd/Y_0.99VO₄:0.01Bi³⁺ samples demonstrating luminescent intensities approximately two-fold and three-fold higher than the undecorated Y_0.99VO₄:0.01Bi³⁺, respectively. The Pd-decorated sample exhibited a maximum relative sensitivity of 2.0 % °C⁻¹ at 149 °C, while the Ag-decorated sample showed a sensitivity of 1.75 % °C⁻¹ at 92 °C and 1.23 % °C⁻¹ at room temperature (∼27 °C). These findings underscore the potential of metal-decorated Y_0.99VO₄:0.01Bi³⁺ nanophosphors for imaging applications.</div></div>","PeriodicalId":18240,"journal":{"name":"Materials Science in Semiconductor Processing","volume":"198 ","pages":"Article 109745"},"PeriodicalIF":4.2,"publicationDate":"2025-06-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144205341","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Investigations on HfO2/n-GaAs(110) interface, in-situ obtained by Oxide-MBE","authors":"Constantin Catalin Negrila ,&nbsp;Costel Cotirlan ,&nbsp;Alexandru-Cristi Iancu ,&nbsp;Dana Georgeta Popescu ,&nbsp;Catalin Palade ,&nbsp;Lucian Trupina","doi":"10.1016/j.mssp.2025.109746","DOIUrl":"10.1016/j.mssp.2025.109746","url":null,"abstract":"<div><div>Hafnium oxide (HfO₂) thin films were deposited on n-type gallium arsenide (GaAs) substrates by Oxide-Molecular Beam Epitaxy (Oxide-MBE) method using Hafnium (Hf) metallic flow in an oxidizing atmosphere of 10^-6 mbar molecular oxygen. The Hf metallic flow was provided by an e-beam evaporator and a deposition rate of ∼ 10 nm/h was established. Semiconductor surface preparation was done prior to deposition, beginning with chemical wet etching and aggressively adjusted by in-situ treatments until a desired stoichiometry was reached. Heterojunctions with HfO₂ thin layers of 1 nm, 3 nm, 10 nm and 20 nm were fabricated. X-Ray Photoelectron Spectroscopy (XPS) and ARXPS(Angle Resolved XPS) in-situ analyses provided a clear picture of the structure of the interfaces, the chemical bonds and their composition. The interfaces are chemically stable and abrupt. A small amount of Ga₂O₃ provides a passivating effect of the semiconductor surface. The electrical properties of the heterostructures were determined using the Kraut method and Reflection Electron Energy Loss Spectroscopy (REELS) technique. Band offsets of ΔE_C=1.75 eV and ΔE_V=2.62 eV confirm a high application potential. Additionally, data on the morphology and continuity of the layers were obtained by Atomic Force Microscopy (AFM) technique while the amorphous growth was monitored by XRD(X-ray Diffraction), GIXRD (Grazing Incidence XRD) and XRR(X-ray Reflectivity) measurements. The dielectric layers showed values of the constant k in the range of 19-22, established by electrical measurements on MOS type capacitors.</div></div>","PeriodicalId":18240,"journal":{"name":"Materials Science in Semiconductor Processing","volume":"198 ","pages":"Article 109746"},"PeriodicalIF":4.2,"publicationDate":"2025-06-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144205342","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"An adaptive near-infrared photodetector for depth sensing and real-time gesture recognition","authors":"Mohit Kumar ,&nbsp;Hyunmin Dang ,&nbsp;Hyungtak Seo","doi":"10.1016/j.mssp.2025.109734","DOIUrl":"10.1016/j.mssp.2025.109734","url":null,"abstract":"<div><div>The rapid evolution of real-time, energy-efficient sensing technologies is paramount for innovations in fields such as 3D imaging, gesture recognition, and human-machine interaction. However, conventional photodetectors are limited by their slow response to sudden changes in light and high-power consumption during continuous monitoring, while event sensors excel in detecting instantaneous changes but are ineffective at capturing gradual intensity shifts. To address these critical limitations, we present a ‘<em>hybrid’</em> near-infrared (NIR) Au/Ga₂O₃/<em>n</em>-Si/Au photodetector, designed to simultaneously detect both instantaneous events and gradual light intensity variations. Our single-pixel NIR photodetector leverages capacitance changes for rapid event detection and photocurrent generation at the junction to monitor continuous light variations. This dual-functionality architecture allows for real-time adaptability in dynamic and static environments. We further demonstrate its capability in real-time z-distance sensing, integrating a deep neural network for precise depth measurements. Additionally, the hybrid single-pixel photodetector facilitates real-time sign language recognition, translating gestures into word, thereby offering a new paradigm in human-machine interaction. By bridging the gap between traditional and event-based sensors, this hybrid NIR device not only meets the demands of next-generation sensing technologies but also redefines the potential for innovation in the fields, such as in object classification, gesture recognition, and beyond.</div></div>","PeriodicalId":18240,"journal":{"name":"Materials Science in Semiconductor Processing","volume":"198 ","pages":"Article 109734"},"PeriodicalIF":4.2,"publicationDate":"2025-06-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144205343","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Wrinkled PDMS/MXene composites: A pathway to high-efficiency triboelectric nanogenerators","authors":"K. Aiswarya ,&nbsp;Madathil Navaneeth ,&nbsp;Lakshakoti Bochu ,&nbsp;Prakash Kodali ,&nbsp;Rajaboina Rakesh Kumar ,&nbsp;Siva Kumar Reddy","doi":"10.1016/j.mssp.2025.109739","DOIUrl":"10.1016/j.mssp.2025.109739","url":null,"abstract":"<div><div>The increased demand for sustainable and green energy harvesting technologies has led to significant progress in triboelectric nanogenerators (TENGs) technology. However, conventional TENGs have drawbacks that limit their practical use, such as low power output, poor surface contact, and restricted charge production. The majority of problems come from the triboelectric layers' intrinsic smoothness of the surfaces, which lowers the effective contact area, resulting in poor performance of the TENGs. Surface engineering strategies have been explored to overcome this challenge and enhance charge transfer and TENG performance. In the present work, we present a wrinkled PDMS/MXene composite-based TENG, where the introduction of microstructured wrinkles on the surface effectively enhances contact electrification and TENG performance. The surface engineering of triboelectric layer was achieved using simple sandpaper in the present work. A comparative analysis between wrinkled and non-wrinkled PDMS/MXene composites was conducted, revealing that the wrinkled structure significantly amplifies the triboelectric output. The optimized device, incorporating 6 wt% MXene in PDMS, achieved an impressive open-circuit voltage of ∼790 V and short-circuit current of 140 μA, outperforming its non-wrinkled pure PDMS counterpart by 3.2 and 7 times in voltage and current, respectively. Additionally, a peak power density of 17.10 W/m² was attained at an optimal load resistance of 5 MΩ, demonstrating its capability for efficient energy conversion. Finally, the prepared TENG is used to power LEDs and LED lamps, and it is also investigated for a self-powered weighing machine application.</div></div>","PeriodicalId":18240,"journal":{"name":"Materials Science in Semiconductor Processing","volume":"198 ","pages":"Article 109739"},"PeriodicalIF":4.2,"publicationDate":"2025-06-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144196343","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Role of hole transport layers in normal and inverted bulk heterojunction organic solar cells: A light intensity dependent capacitance-voltage analysis","authors":"Shailendra Kumar Gupta ,&nbsp;Durgesh C. Tripathi ,&nbsp;Amit Kumar ,&nbsp;Neha Garg ,&nbsp;Chinmay K. Gupta ,&nbsp;Vandana Yadav ,&nbsp;Sandeep Sharma ,&nbsp;Sanjeev Kumar ,&nbsp;Ashish Garg","doi":"10.1016/j.mssp.2025.109736","DOIUrl":"10.1016/j.mssp.2025.109736","url":null,"abstract":"<div><div>In organic solar cells (OSC) hole transport layers (HTL) are essential for boosting the power conversion efficiency (PCE); therefore, it is crucial to determine the underlying mechanisms. In the present manuscript, we report a study that examines the effects of two HTL such as PEDOT:PSS and MoO₃, on the electrical characteristics of P3HT:PC₆₁BM (active layer) based bulk heterojunction (BHJ) in normal (ITO/PEDOT:PSS/P3HT:PCBM/Al) and inverted (ITO/ZnO/P3HT:PCBM/MoO₃/Ag) configurations. Current density-voltage (<em>J-V</em>) and illumination intensity dependent capacitance-voltage (<em>C-V)</em> measurements have been performed and compared for with and without HTL (PEDOT:PSS in normal and MoO₃ in inverted) devices. Results suggest that the extracted photovoltaic parameters (short circuit current density (<em>J</em>_<em>sc</em>), open circuit voltage (<em>V</em>_<em>oc</em>) and fill factor (<em>FF</em>)) of HTL containing devices are superior to without HTL devices in both normal and inverted OSC, due to unfavourable charge carrier accumulation and band bending in HTL free devices. Such charge build-up at active layer/anode interface generates photovoltage contributing as loss factor to PCE and has been investigated in <em>C-V</em> characteristics measured under varied illumination intensities (0/dark, 50 and 100 mWcm⁻²). Parameters such as built-in-voltage (V_<em>bi</em>), effective built-in-voltage (V_{<em>bi, eff</em>}), accumulated carrier concentration and surface photovoltage (V_<em>spv</em> = V_{<em>bi, eff</em>} - V_<em>bi</em>) are extracted as a function of illumination intensity. Our findings reveal that HTL free devices, in both conventional and inverted OSCs structures, marked with low J_sc, V_oc and FF values generate higher <em>SPV</em>. The <em>SPV</em> calculation method used here has been proven to be crucial in recommending a suitable HTL for OSC device architectures.</div></div>","PeriodicalId":18240,"journal":{"name":"Materials Science in Semiconductor Processing","volume":"198 ","pages":"Article 109736"},"PeriodicalIF":4.2,"publicationDate":"2025-06-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144205344","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"In-situ hydrothermal synthesis of Bi2S3 nanoribbons to construct Bi2S3/BiVO4/TiO2 composite films with 96.1 % Cr(VI) reduction","authors":"Xinli Li,&nbsp;Hongwei Wang,&nbsp;Yuan Cheng,&nbsp;Pengyu Zhang,&nbsp;Minghui Tan,&nbsp;Renhong Yu,&nbsp;Yunfei Zang,&nbsp;Zhiping Mao","doi":"10.1016/j.mssp.2025.109740","DOIUrl":"10.1016/j.mssp.2025.109740","url":null,"abstract":"<div><div>With the rapid industrialization deteriorating heavy metal water pollution, photocatalytic technology has emerged as a promising solution. In this study, a novel in-situ hydrothermal technique enabled the integration of Bi₂S₃ nanoribbons and BiVO₄ particles with TiO₂ forming a stable Bi₂S₃/BiVO₄/TiO₂ composite film, and utilized sulfur (S) source concentration to regulate Bi₂S₃ morphology to enhance photocatalytic property of TiO₂. The results show that with the introduction of S source, the morphology of Bi₂S₃ showed obvious evolution law. Under the low concentration of S source (1 mmol), Bi₂S₃ formed nanospines, evolving into nanoribbons (3,5 mmol) and nanosheets (7 mmol), with agglomeration observed at 10 mmol. When the amount of S source was 5 mmol (SVT-5), Bi₂S₃ nanoribbons was the most suitable morphology, and exhibited enhanced visible-light absorption and the narrowest bandgap (2.76 eV). SVT-5 demonstrated superior photoelectrochemical property: highest photocurrent density, lowest impedance, maximum carrier concentration, and prolonged carrier lifetime (15.2 ms). Under simulated solar light, SVT-5 achieved a reduction efficiency of 96.1 % and a reduction rate of 0.0336 min⁻¹ for 5 mg/L Cr(VI) after 100 min, outperforming TiO₂ and BiVO₄/TiO₂. Additionally, SVT-5 maintained 90 % efficiency after four cycles, highlighting its stability. This work provides a morphology-regulation strategy to enhance TiO₂-based photocatalysts, offering a viable approach for heavy metal wastewater treatment and advancing applications in optoelectronics and environmental remediation.</div></div>","PeriodicalId":18240,"journal":{"name":"Materials Science in Semiconductor Processing","volume":"198 ","pages":"Article 109740"},"PeriodicalIF":4.2,"publicationDate":"2025-06-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144195826","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"N-doped graphene-like coating for improved microcapacitance of nanoporous silicon","authors":"Daria M. Sedlovets ,&nbsp;Vitaly V. Starkov ,&nbsp;Vassa V. Ulianova","doi":"10.1016/j.mssp.2025.109741","DOIUrl":"10.1016/j.mssp.2025.109741","url":null,"abstract":"<div><div>Silicon wafers are the main platform for the integrating of electronic devices, porous silicon (pSi) is a promising material for on-chip microcapacitor electrodes. A method is proposed to improve the electrochemical efficiency of pSi by depositing a nitrogen-doped graphene-like coating (N-GLC) on it. N-GLC is first used to coat the entire 80 μm pSi layer. The sharp pressure drops during chemical vapor deposition (CVD) of N-GLC allow N-doped carbon to be deposited throughout the full depth of the pores. Graphitic N (the main configuration of nitrogen in N-GLC) enhances the conductivity of the composite. Moreover, the influence of GLC penetration depth in pSi on its capacitance is investigated.</div><div>Electrochemical impedance spectra, cyclic voltammetry, and galvanostatic charge-discharge data in 3M H₂SO₄ are presented along with the results of cyclic stability measurements. High capacitance (145 mF/cm²) and excellent cyclic stability (over 20,000 cycles even at low scan rates) are achieved for a pSi microcapacitor electrode. Considerably higher values have been reported only in ionic electrolytes and/or with an additional MnO_x coating on silicon nanowires – morphologically similar materials that require complicated technology.</div></div>","PeriodicalId":18240,"journal":{"name":"Materials Science in Semiconductor Processing","volume":"198 ","pages":"Article 109741"},"PeriodicalIF":4.2,"publicationDate":"2025-06-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144205340","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}