Materials Science in Semiconductor Processing最新文献

{"title":"Influence of natural carbon template on Ag-ZnO nanocomposites for enhanced supercapacitor, photocatalytic hydrogen production and antifungal activity","authors":"K. Sasikumar ,&nbsp;M. Theanmozhi ,&nbsp;P. Devaraji ,&nbsp;Chinnakonda S. Gopinath ,&nbsp;B. Saravanakumar ,&nbsp;R. Jude Vimal Michael","doi":"10.1016/j.mssp.2025.109523","DOIUrl":"10.1016/j.mssp.2025.109523","url":null,"abstract":"<div><div>Zinc oxide (ZnO) hexagonal nanorods and silver (Ag) - ZnO nanoplate like structures are synthesized by using novel natural carbon templates. The structural intricacies are evaluated with various characterizations which is utilized for supercapacitor and photocatalytic H₂ production under direct sunlight applications. The role of carbon template in silver ion dispersion on ZnO matrix which is reflected in XRD and optical measurements. The presence of Ag (111) plane in the ZnO matrix, as proved by XRD shifts the Fermi level which in turn facilitates electron transport from valence band to conduction band whilst it is useful for photocatalytic H₂ production. The UV-DRS shift in wavelength to visible region is observed with the introduction of silver on ZnO. The HRSEM and HRTEM reveals the presence of nanorods and plate like morphology with distinct Ag (111) lattice fringes. XPS gives insight about the oxidation state of Ag-ZnO nanocomposites which is also complimented from peaks in XRD and LSPR in UV-DRS. Silver presence in both oxidation state attributed to Ag₂O (Ag⁺) and metallic silver cluster (Ag⁰). The BET isotherm substantiates increased surface area for the Ag5 %-ZnO (PC) composite than Ag5 %-ZnO (Egg white-EW), since the former provides fine dispersion of Ag on ZnO matrix. The electrochemical investigations reveal that the material with higher surface area provide more active sites for superior specific capacitance (221.1 F g⁻¹) and high energy density (27.6 Wh kg⁻¹) with 88 % capacitance retention stability which is clearly evidenced from GCD analysis. The lower charge transfer resistance of Ag-ZnO nanocomposite is beneficial for energy conversion and storage applications. The usage of silver in ZnO enhanced the antifungal activity against aspergillus niger fungi.</div></div>","PeriodicalId":18240,"journal":{"name":"Materials Science in Semiconductor Processing","volume":"193 ","pages":"Article 109523"},"PeriodicalIF":4.2,"publicationDate":"2025-03-31","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143748033","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"A lightweight model and agent framework for fast and accurate surface defect detection in MoS2 films","authors":"Ruiliang Zhou ,&nbsp;Jian Yang ,&nbsp;Hailong Liu ,&nbsp;Chen Xu ,&nbsp;Yan Pu ,&nbsp;Ivan S. Babichuk","doi":"10.1016/j.mssp.2025.109494","DOIUrl":"10.1016/j.mssp.2025.109494","url":null,"abstract":"<div><div>Two-dimensional (2D) materials, particularly transition metal dichalcogenides (TMDs), have shown great potential in optoelectronics and energy storage due to their unique properties. However, defects such as impurities and voids can significantly impact their electronic, optical, and magnetic characteristics. Traditional defect detection methods, such as scanning transmission electron microscopy (STEM), are time-consuming and limited in scalability. This study introduces DeepMGD, a novel deep learning model designed for efficient and accurate defect detection in molybdenum disulfide (MoS<span><math><msub><mrow></mrow><mrow><mn>2</mn></mrow></msub></math></span>) films fabricated via chemical vapor deposition (CVD) and imaged using optical microscopy. DeepMGD utilizes MobileNetV4 as its backbone, Gold-YOLO as the neck, and a decoupled head. The architecture attains a competitive mAP@50 of 0.894 under challenging illumination conditions while maintaining a lean parameter count of 5.129 million, achieving 122.2 FPS on a GPU and 3.0 FPS on a CPU. Additionally, we present the DeepMGD Agent, an intelligent system framework that integrates the DeepMGD model with a large language model (LLM) and a Python interpreter. This framework automates defect detection and analysis, offering an intuitive workflow for users. The system processes microscopic images and user commands to detect defects and generate natural language explanations, enabling seamless defect detection and quantitative analysis. This work provides a reliable and efficient approach for analyzing 2D materials, with potential applications for other similar materials in the future. The code is released at <span><span>https://github.com/zhouruiliangxian/DeepMGD</span><svg><path></path></svg></span>.</div></div>","PeriodicalId":18240,"journal":{"name":"Materials Science in Semiconductor Processing","volume":"193 ","pages":"Article 109494"},"PeriodicalIF":4.2,"publicationDate":"2025-03-31","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143748030","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Preparation and application of two-dimensional gallium nitride - A short review","authors":"Hongbin Zhai ,&nbsp;Ben Cao ,&nbsp;Changtong Wu ,&nbsp;Jiahui Wang ,&nbsp;Shufang Ma ,&nbsp;Bingshe Xu ,&nbsp;Guoqiang Li","doi":"10.1016/j.mssp.2025.109512","DOIUrl":"10.1016/j.mssp.2025.109512","url":null,"abstract":"<div><div>Gallium Nitride (GaN), as a representative of wide bandgap semiconductors, has become a focus of semiconductor research in recent years due to its excellent electronic and optoelectronic properties. Meanwhile, two-dimensional GaN, with its distinctive layered structure and tunable bandgap, has garnered significant attention in domains such as power electronics, optoelectronics, energy conversion and flexible wearable devices. Over the last few years, substantial research has been conducted on the fabrication of two-dimensional GaN materials and their device applications. Despite the broad prospects for the preparation and application of 2D GaN, it continues to face several challenges. This review highlights methods for the preparation of two-dimensional gallium nitride materials and device applications for power electronics, optoelectronics, as well as communications, detectors, and sensors. It summarizes different synthetic routes based on nitridation reactions, graphene-assisted heteroepitaxial growth, etc., and exemplifies the current status of device application research based on 2D GaN materials. Additionally, it anticipates the challenges encountered by current research and the emerging trends in future development, with the aim of facilitating the practical implementation process of 2D GaN.</div></div>","PeriodicalId":18240,"journal":{"name":"Materials Science in Semiconductor Processing","volume":"193 ","pages":"Article 109512"},"PeriodicalIF":4.2,"publicationDate":"2025-03-31","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143748034","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"In-situ oxidation of CoOOH decorated on P25 heterostructure as the co-catalyst for enhanced photodegradation of organic pollutants","authors":"Haibo Jiang ,&nbsp;Kaina Yang ,&nbsp;Shenyang Cao ,&nbsp;Shengwei Yu ,&nbsp;Xue Sun ,&nbsp;Shengqiu Shou ,&nbsp;Jianhua Shen","doi":"10.1016/j.mssp.2025.109522","DOIUrl":"10.1016/j.mssp.2025.109522","url":null,"abstract":"<div><div>Surface modification of nanoscale titanium dioxide (P25) for photocatalysts can improve carrier separation efficiency by constructing heterojunction structures and reduce reaction energy barriers by introducing co-catalysts. This study describes the successful deposition of CoOOH particles on the P25 surface using solvent-based and in-situ oxidation methods, resulting in a type II P25-CoOOH heterostructure. The photocurrent of P25-CoOOH exhibited a 630 % increase compared to pure P25, while showing a reduced surface potential barrier of 2.21 eV. Density functional theory (DFT) simulations demonstrated that the work function of the CoOOH (001) surface (Φ = 6.639 eV) is significantly lower than that of P25 (101) (Φ = 7.238 eV). Photoluminescence (PL) spectra and active species trapping experiments demonstrated a slower rate of electron and hole recombination in P25-CoOOH compared to pure P25, which effectively reduces electron-hole pair recombination and significantly enhances its photocatalytic activity for degrading methylene blue (MB) by 2.07 times that of P25. These findings suggest that CoOOH not only forms a heterojunction with P25 to improve carrier separation efficiency but also serves as a co-catalyst, increasing the number of active sites on the surface.</div></div>","PeriodicalId":18240,"journal":{"name":"Materials Science in Semiconductor Processing","volume":"193 ","pages":"Article 109522"},"PeriodicalIF":4.2,"publicationDate":"2025-03-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143748031","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Structural, substructural, magnetic, and electrical properties of Ti-substituted tetrahedrites with enhanced thermoelectric performance","authors":"Oleksandr Dobrozhan ,&nbsp;Roman Pshenychnyi ,&nbsp;Maksym Yermakov ,&nbsp;Bohdan Boiko ,&nbsp;Serhii Vorobiov ,&nbsp;Vladimír Tkáč ,&nbsp;Anatoliy Opanasyuk","doi":"10.1016/j.mssp.2025.109520","DOIUrl":"10.1016/j.mssp.2025.109520","url":null,"abstract":"<div><div>This study demonstrates the effect of substituting titanium (Ti) in place of copper (Cu) in Cu_12−xTi_xSb₄S₁₃ tetrahedrite solid solutions on their structural, substructural, magnetic, and thermoelectric (TE) properties. Tetrahedrite materials with a nominal Ti substitution content of x = 0.0, 0.3, 0.5, 1.0, and 1.5 are synthesized via a low-cost and scalable polyol method using posterior annealing, pressing, and sintering treatments. X-ray diffraction analysis and Raman spectroscopy confirm that the solid solutions contain nanocrystallites with sizes ranging from ∼60 to ∼65 nm, which possess a single tetrahedrite phase. The replacement of Ti at Cu sites induces convoluted changes in the lattice parameter, unit cell volume, coherent scattering domains, and levels of macrodeformations, macrostresses, and dislocations. Moreover, the crystalline quality of the tetrahedrites is observed to depend on Ti substitution content. Scanning electron microscopy and energy-dispersive X-ray analysis indicate that the tetrahedrites comprise grains with sizes ranging from ∼70 to ∼200 nm with homogeneous distribution of constituent elements and closeness to stoichiometric composition. Ti substitution decreases the electrical conductivity and increases Seebeck coefficient because of hole concentration reduction caused by Ti⁴⁺ substitution at Cu¹⁺/Cu²⁺ sites. The power factor slightly decreases with increased Ti content; however, electronic thermal conductivity notably reduces by two times in comparison to pure tetrahedrite. Furthermore, magnetic parameters of the tetrahedrites are identified to assess the change in the electronic density of states. This study provides a practical approach for the fabrication of low-cost and efficient TE materials based on environmentally benign and earth-abundant Ti-substituted tetrahedrites.</div></div>","PeriodicalId":18240,"journal":{"name":"Materials Science in Semiconductor Processing","volume":"193 ","pages":"Article 109520"},"PeriodicalIF":4.2,"publicationDate":"2025-03-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143735321","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Pressure effects on the electronic, optical, and thermodynamic properties in van der waals multiferroic NiI2","authors":"A. Bouhmouche ,&nbsp;R. Moubah ,&nbsp;S. Elkhouad ,&nbsp;Z. Yamkane ,&nbsp;N.T. Mliki","doi":"10.1016/j.mssp.2025.109515","DOIUrl":"10.1016/j.mssp.2025.109515","url":null,"abstract":"<div><div>Recently, NiI₂ was demonstrated as the first purely 2D multiferroic material, offering new insights into the interplay between magnetic and ferroelectric order in two-dimensional systems, and showcasing its potential as a versatile material for next-generation spintronic and multifunctional devices. In this work, we investigate the electronic, optical, and thermodynamic properties of the newly identified van der Waals multiferroic material NiI₂ using <em>ab-initio</em> calculations, focusing on the impact of applied pressure on its properties. From an electronic perspective, NiI₂ undergoes a transition from a semiconductor (1.1 eV) to a metallic state at 25 GPa due to pressure-induced modifications of the electronic structure, particularly the hybridization of Ni 3d and I 5p orbitals. The study also investigates the anisotropic behavior of NiI₂ under pressure, the transition occurring at 15 GPa along the <em>ab-plane</em> and at 13 GPa along the <em>c-axis</em>. This demonstrates the material's distinct response to pressure in different crystallographic directions. The effect of hydrostatic pressure on the magnetic properties of NiI₂ was also examined, revealing a reinforcement of antiferromagnetic interactions with increasing pressure. Moreover, significant enhancements are observed in the material's optical characteristics, particularly in its optical conductivity, the material exhibits an increase from 1221 (Ω cm)⁻¹ at 0 GPa to 2169 (Ω cm)⁻¹ at 9 GPa. Similarly, the absorption coefficient spectrum improves from 1.2 × 10⁵ cm⁻¹ at 0 GPa to 1.8 × 10⁵ cm⁻¹ at 9 GPa, around 2 eV. Interestingly, the static refractive index also shows a significant enhancement, increasing from 3.6 under ambient pressure to 4.2 at 9 GPa. These changes are attributed to structural modifications and increased electron delocalization. Additionally, thermodynamic analysis, including heat capacity and entropy, provides key insights into the material's behavior under pressure. The heat capacity increases linearly with temperature, following the Dulong-Petit law, while the normalized heat capacity exhibits a peak that is in line with a magnetic phase transition at around 59 K, a peak that shifts with pressure. These findings highlight the potential of NiI₂ for multifunctional devices, where pressure plays a crucial role in tuning its properties.</div></div>","PeriodicalId":18240,"journal":{"name":"Materials Science in Semiconductor Processing","volume":"193 ","pages":"Article 109515"},"PeriodicalIF":4.2,"publicationDate":"2025-03-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143724119","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Study of half metallic ferromagnetism, Curie temperature, and thermoelectric aspects of double perovskite oxides Ba2XMoO6 (X = Cr, Mn, Fe, Co) for spintronic applications","authors":"Q. Mahmood","doi":"10.1016/j.mssp.2025.109519","DOIUrl":"10.1016/j.mssp.2025.109519","url":null,"abstract":"<div><div>Spintronics is a cutting-edge technology that manipulates both the spin and charge of electrons to control the behaviour of multifunctional devices. Here in the current paper, the half-metallic ferromagnetism, electronic properties, and influence of transport parameters on the magnetic behaviour of double perovskite oxides Ba₂XMoO₆ (X = Cr, Mn, Fe, Co) are addressed comprehensively by Wien2k and Boltz Trap codes. The ferromagnetic (FM) state exhibits higher optimized energy compared to antiferromagnetic (AFM) and paramagnetic (PM) states, showing enhanced stability. The negative formation energy (−2.65, −2.62, −2.49, −2.46) eV further confirms the thermodynamic stability of these materials. The spin polarization density and magnetic moments (4.0, 5.0, 4.0, 3.0)μ_B collectively validate the 100 % spin polarization. The Heisenberg model ensures the Curie temperature (340, 331, 325, 313)K at room temperature. The band structures exhibit discrete metallic and insulating characteristics for spin-up and spin-down configurations, thereby consolidating half-metallic ferromagnetism in these materials. The double exchange mechanism, hybridization <em>p-d</em> states, and associated exchange constants influence the exchange splitting energies, which eventually elaborate the function and nature of the spin of electrons that establish ferromagnetism in the studied system. The analysis of the Seebeck coefficient and thermal and electrical conductivities have explained the influence of transport properties on the spin functionality of the electrons. Additionally, the power factor has been reported to assess their thermoelectric performance. The stable structures, above-room temperature ferromagnetism, and ultralow lattice thermal conductivity increase their importance for spintronics.</div></div>","PeriodicalId":18240,"journal":{"name":"Materials Science in Semiconductor Processing","volume":"193 ","pages":"Article 109519"},"PeriodicalIF":4.2,"publicationDate":"2025-03-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143724116","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Synthesis, characterization and catalytic applications of CaO-Cu decorated PANI/SA nanocomposites for wastewater treatment","authors":"Urooj Mariam ,&nbsp;Sarmed Ali ,&nbsp;Saba Jamil ,&nbsp;Asima Saif ,&nbsp;Hifza Arshad ,&nbsp;Tahseen Kamal ,&nbsp;Shaista Liaqat ,&nbsp;Muhammad Jamshed Latif ,&nbsp;Shanza Rauf Khan","doi":"10.1016/j.mssp.2025.109486","DOIUrl":"10.1016/j.mssp.2025.109486","url":null,"abstract":"<div><div>The development of an innovative and efficient catalyst has led to the synthesis of calcium oxide-copper bimetallic nanoparticles (CaO-Cu BNPs) through the chemical reduction of copper nitrate Cu(NO₃)₂ and calcium oxide (CaO) using sodium borohydride (NaBH₄) as a reducing agent. Polyaniline (PANI) and sodium alginate (SA) were incorporated via in-situ oxidative polymerization. Characterization techniques including X-ray Diffraction (XRD), Scanning Electron Microscopy (SEM), Energy Dispersive X-ray (EDX), and Fourier-transform infrared (FTIR) spectroscopy confirmed the structure, morphology and elemental composition identifying Ca, Cu, and O of the BNPs and nanocomposites (NCs). The catalytic performance of the CaO-Cu BNPs and their NCs CaO-Cu/SA, CaO-Cu/PANI, and CaO-Cu/SA/PANI were evaluated for the reduction of methyl red (MR), crystal violet (CV), methyl blue (MB), and eriochrome black T (EBT). CaO-Cu/SA/PANI NC showed superior performance achieving a 97 % reduction of MB in 18 min with an apparent rate constant of 0.2096 min⁻¹ and a half-life of 3 min. The reduction time for organic dyes achieved by CaO- Cu/SA/PANI NC is 18 min for MB, 20 min for EBT, 30 min for MR, and 16 min for CV, and half-life values for these dyes were 3, 4, 5, and 3 min, respectively. These findings highlight the potential of CaO-Cu/SA/PANI as an effective catalyst for dye reduction in wastewater treatment.</div></div>","PeriodicalId":18240,"journal":{"name":"Materials Science in Semiconductor Processing","volume":"193 ","pages":"Article 109486"},"PeriodicalIF":4.2,"publicationDate":"2025-03-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143724117","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Growth, optimization and high-temperature performance of GeO2/Ga2O3 MOSCAPs","authors":"N. Manikanthababu ,&nbsp;Subrata Karmakar ,&nbsp;Ishtiaq Firoz Shiam ,&nbsp;Injamamul Hoque Emu ,&nbsp;Ariful Haque ,&nbsp;Ravi Droopad","doi":"10.1016/j.mssp.2025.109518","DOIUrl":"10.1016/j.mssp.2025.109518","url":null,"abstract":"<div><div>In this study, GeO₂ thin films were grown by pulsed laser deposition (PLD) on β-Ga₂O₃, (<span><math><mrow><mo>−</mo><mn>201</mn></mrow></math></span>) single crystal substrates to fabricate metal-oxide-semiconductor capacitors (MOSCAPs) to investigate their properties using current-voltage (I-V) and capacitance-voltage (C-V) measurements at elevated temperatures. The amorphous nature, an ultrawide bandgap of ∼5.11 eV and the elemental compositions with their corresponding chemical states of the GeO₂ thin films were confirmed by X-ray diffraction (XRD), UV–Vis spectrometery and the x-ray photoelectron spectroscopy (XPS), respectively. The <em>Ge-3d</em> deconvoluted peak at 32.4 eV confirms the elemental bonding in GeO₂, with an additional peak found at 30.9 eV that can be attributed to a small portion of GeO_2-x. The Au/GeO₂/Ga₂O₃ MOSCAPs were fabricated to study its high-temperature performance from room temperature (RT) to 300 °C. The reverse leakage current was increased from 1.19 × 10⁻⁷ A to 3.66 × 10⁻⁴ A (nearly four orders of magnitude) as the temperature rises from RT to 300 °C. Due to the presence of oxygen vacancy in GeO_2-x, the Poole-Frenkel current conduction mechanism was utilized to determine a trap level of 0.8 V (below the conduction band of GeO₂) with an activation energy of 0.55 eV. The C–V measurements also show a significant contribution from defects in the flat-band voltage shift and the changes of the slopes indicates an increase in the oxide and interface-trapped charges. The density of oxide-trapped charges increased from 3.9 × 10¹² cm⁻² to 1.3 × 10¹³ cm⁻², as the temperature reached 300 °C. Similarly, the density of interface-trapped charges increased from 3.4 × 10¹² cm⁻² at RT to 1.1 × 10¹³ cm⁻² at 300 °C. The flat-band voltage shift and density of interface-trapped charges of GeO₂/Ga₂O₃ MOSCAPs exhibit exciting materials characteristics for next-generation high-power and high-temperature electronic devices.</div></div>","PeriodicalId":18240,"journal":{"name":"Materials Science in Semiconductor Processing","volume":"193 ","pages":"Article 109518"},"PeriodicalIF":4.2,"publicationDate":"2025-03-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143724519","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Enhanced wide band spectral photodetection (UV-NIR) and high detectivity investigated in topological p-TlBiSe2/n-ITO heterojunction","authors":"Gyanendra Kumar Maurya ,&nbsp;Sandeep Kumar Verma ,&nbsp;Roshani Singh ,&nbsp;Satendra Kumar ,&nbsp;Vipin Kumar ,&nbsp;Rachana Kumar ,&nbsp;Pramod Kumar","doi":"10.1016/j.mssp.2025.109513","DOIUrl":"10.1016/j.mssp.2025.109513","url":null,"abstract":"<div><div>Heterojunctions comprised of topological insulator material such as TlBiSe₂ have sparked intense study attention due to their diverse and unique characteristics and functionalities. The emergence of topological heterojunction can result in a p-n junction at the interfaces having a strong crucial potential barrier that enhances the photodetection capabilities of topological insulators. This study enlightens the successful fabrication and characterization of a novel heterojunction photodetector based on topological insulator p-TlBiSe₂/n-ITO, demonstrated remarkable photodetection abilities across a wide spectral range from ultraviolet (UV) to near-infrared (NIR). The unique topological properties of TlBiSe₂, combined with the excellent conductivity of ITO, contribute to enhanced responsivity and detectivity. Detailed analysis revealed high photodetection performance, with strong spectral responsivity, external quantum efficiency, and fast response time in detecting wavelengths ranging from 200 nm to 1000 nm, The high value of responsivity 1357 A/W and impressive detectivity value of <span><math><mrow><mn>2.89</mn><mo>×</mo><msup><mn>10</mn><mn>12</mn></msup></mrow></math></span> Jones makes this heterojunction highly suitable for applications requiring broad-spectrum detection. These findings highlight the potential of p-TlBiSe₂/n-ITO heterojunctions for next-generation photodetectors in UV and NIR applications, offering a promising platform for future optoelectronic devices.</div></div>","PeriodicalId":18240,"journal":{"name":"Materials Science in Semiconductor Processing","volume":"193 ","pages":"Article 109513"},"PeriodicalIF":4.2,"publicationDate":"2025-03-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143705003","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}