New insights in vertical GaN-on-GaN Schottky diode by Raman, cathodoluminescence and electrical characterizations

IF 4.6 3区工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC

Materials Science in Semiconductor Processing Pub Date : 2025-06-05 DOI:10.1016/j.mssp.2025.109681

Vishwajeet Maurya , Daniel Alquier , Maroun Dagher , Camille Sonneville , Dominique Planson , Hala El Rammouz , Thomas Kaltsounis , Eric Frayssinet , Yvon Cordier , Nevine Rochat , Matthew Charles , Julien Buckley

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Abstract

This article compares the impact of different freestanding GaN substrates on the material and electrical properties of Schottky diodes. Material characterization using cathodoluminescence and Raman spectroscopy was performed to analyze defects in the wafers. Randomly distributed clusters of dislocations were observed in one sample, whereas the other sample was free of such clusters. Schottky diodes were subsequently fabricated on these wafers and electrically characterized to investigate the influence of material characteristics on key device parameters, including barrier height, ideality factor, on-resistance, leakage current, and breakdown voltage. A lower barrier height, higher ideality factor, and lower breakdown voltage were observed in the sample with clusters.

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垂直GaN-on-GaN肖特基二极管的拉曼、阴极发光和电学表征新见解

本文比较了不同的独立GaN衬底对肖特基二极管材料和电性能的影响。利用阴极发光和拉曼光谱对材料进行了表征，分析了晶圆中的缺陷。在一个样本中观察到随机分布的错位簇，而另一个样本则没有这种簇。随后在这些晶圆上制造肖特基二极管并进行电特性表征，以研究材料特性对关键器件参数的影响，包括势垒高度、理想因数、导通电阻、漏电流和击穿电压。具有簇的样品具有较低的势垒高度、较高的理想因数和较低的击穿电压。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

Materials Science in Semiconductor Processing 工程技术-材料科学：综合

CiteScore

8.00

自引率

4.90%

发文量

780

审稿时长

42 days

期刊介绍： Materials Science in Semiconductor Processing provides a unique forum for the discussion of novel processing, applications and theoretical studies of functional materials and devices for (opto)electronics, sensors, detectors, biotechnology and green energy. Each issue will aim to provide a snapshot of current insights, new achievements, breakthroughs and future trends in such diverse fields as microelectronics, energy conversion and storage, communications, biotechnology, (photo)catalysis, nano- and thin-film technology, hybrid and composite materials, chemical processing, vapor-phase deposition, device fabrication, and modelling, which are the backbone of advanced semiconductor processing and applications. Coverage will include: advanced lithography for submicron devices; etching and related topics; ion implantation; damage evolution and related issues; plasma and thermal CVD; rapid thermal processing; advanced metallization and interconnect schemes; thin dielectric layers, oxidation; sol-gel processing; chemical bath and (electro)chemical deposition; compound semiconductor processing; new non-oxide materials and their applications; (macro)molecular and hybrid materials; molecular dynamics, ab-initio methods, Monte Carlo, etc.; new materials and processes for discrete and integrated circuits; magnetic materials and spintronics; heterostructures and quantum devices; engineering of the electrical and optical properties of semiconductors; crystal growth mechanisms; reliability, defect density, intrinsic impurities and defects.