Yu Shu , Hui Wan , Hao Cao , Chengqun Gui , Shuo Chen , Deming Wang
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引用次数: 0
Abstract
Laser-induced nano-healing plays a pivotal role in repairing structural defects in devices, primarily attributed to localized thermal fields generated by photothermal effects, which reduce nanogap sizes. However, the phenomenon of nanomaterial contraction into spheres under thermal fields indicates that the underlying mechanisms of nano-healing under thermal influence remain incompletely understood. This study employs molecular dynamics simulations to investigate the size evolution of silver nanowires under thermal fields, aiming to explore the effects of temperature on nanomaterial size changes and to further elucidate the mechanisms of nano-healing applications. The findings reveal that temperatures during the surface melting phase, below the melting point, promote the attainment of larger axial sizes in silver nanowires. The axial dimensions of silver nanowires are influenced not only by temperature-induced lattice spacing but also by the transport of atoms toward the central regions of end faces driven by surface melting. The study demonstrates that temperatures during the surface melting phase are more favorable for the healing of nanogaps, with higher temperatures enhancing the surface diffusion healing of nanoscale pits. These results provide valuable insights into the utilization of thermal fields for nano-healing and the subsequent repair of device defects.
期刊介绍:
Materials Science in Semiconductor Processing provides a unique forum for the discussion of novel processing, applications and theoretical studies of functional materials and devices for (opto)electronics, sensors, detectors, biotechnology and green energy.
Each issue will aim to provide a snapshot of current insights, new achievements, breakthroughs and future trends in such diverse fields as microelectronics, energy conversion and storage, communications, biotechnology, (photo)catalysis, nano- and thin-film technology, hybrid and composite materials, chemical processing, vapor-phase deposition, device fabrication, and modelling, which are the backbone of advanced semiconductor processing and applications.
Coverage will include: advanced lithography for submicron devices; etching and related topics; ion implantation; damage evolution and related issues; plasma and thermal CVD; rapid thermal processing; advanced metallization and interconnect schemes; thin dielectric layers, oxidation; sol-gel processing; chemical bath and (electro)chemical deposition; compound semiconductor processing; new non-oxide materials and their applications; (macro)molecular and hybrid materials; molecular dynamics, ab-initio methods, Monte Carlo, etc.; new materials and processes for discrete and integrated circuits; magnetic materials and spintronics; heterostructures and quantum devices; engineering of the electrical and optical properties of semiconductors; crystal growth mechanisms; reliability, defect density, intrinsic impurities and defects.