Numerical and experimental investigation of CdTe crystal growth assisted by a thermal–shielding ring for stable interface control

IF 4.6 3区工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC

Materials Science in Semiconductor Processing Pub Date : 2025-09-14 DOI:10.1016/j.mssp.2025.110059

Zhicheng Zhu , Youbao Ni , Xuezhou Yu , Changbao Huang , Haixin Wu , Qianqian Hu , Huabei Qi , Ya Li , Guojin Liu , Ping Yu , Weihao Chen , Qingli Zhang

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引用次数: 0

Abstract

Cadmium telluride (CdTe) has been widely applied in nuclear radiation detection and infrared optoelectronics. However, twins and grain boundaries formed during growth remain a critical limitation for large–scale application, due to their impact on crystal yield and production cost. In this study, we present a simple and effective approach to stabilize a slightly convex solid–liquid interface by introducing a thermal–shielding ring (TS–ring) into the thermal gradient zone of a Vertical Bridgman furnace. Numerical simulations were conducted to optimize the TS–ring geometry, and crystal growth experiments were performed for validation. The resulting CdTe single crystal exhibited large volumes free of twins and grain boundaries. X–ray rocking curve revealed the full width at half maximum of the as–grown CdTe crystal is around 0.05°. Infrared transmittance reached 65 %–68 %, the etch pit density was below 3 × 10⁴ cm⁻², and the resistivity reached 4.3 × 10⁷ Ω cm. These results demonstrate that stabilizing a slightly convex interface via the TS–ring is an effective strategy for improving the quality and yield of CdTe single crystals.

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热屏蔽环辅助CdTe晶体生长的数值与实验研究

碲化镉（CdTe）在核辐射探测和红外光电子学中有着广泛的应用。然而，在生长过程中形成的孪晶和晶界仍然是大规模应用的关键限制，因为它们会影响晶体产量和生产成本。在这项研究中，我们提出了一种简单有效的方法，通过在垂直布里奇曼炉的热梯度区引入热屏蔽环（ts -环）来稳定微凸的固液界面。通过数值模拟优化了ts环的几何形状，并进行了晶体生长实验验证。所得的CdTe单晶表现出无孪晶和无晶界的大体积。x射线摇摆曲线显示，长大后的CdTe晶体的最大半宽约为0.05°。红外透过率达到65% ~ 68%，蚀坑密度低于3 × 104 cm−2，电阻率达到4.3 × 107 Ω cm。这些结果表明，通过ts环稳定微凸界面是提高CdTe单晶质量和产量的有效策略。

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来源期刊

Materials Science in Semiconductor Processing 工程技术-材料科学：综合

CiteScore

8.00

自引率

4.90%

发文量

780

审稿时长

42 days

期刊介绍： Materials Science in Semiconductor Processing provides a unique forum for the discussion of novel processing, applications and theoretical studies of functional materials and devices for (opto)electronics, sensors, detectors, biotechnology and green energy. Each issue will aim to provide a snapshot of current insights, new achievements, breakthroughs and future trends in such diverse fields as microelectronics, energy conversion and storage, communications, biotechnology, (photo)catalysis, nano- and thin-film technology, hybrid and composite materials, chemical processing, vapor-phase deposition, device fabrication, and modelling, which are the backbone of advanced semiconductor processing and applications. Coverage will include: advanced lithography for submicron devices; etching and related topics; ion implantation; damage evolution and related issues; plasma and thermal CVD; rapid thermal processing; advanced metallization and interconnect schemes; thin dielectric layers, oxidation; sol-gel processing; chemical bath and (electro)chemical deposition; compound semiconductor processing; new non-oxide materials and their applications; (macro)molecular and hybrid materials; molecular dynamics, ab-initio methods, Monte Carlo, etc.; new materials and processes for discrete and integrated circuits; magnetic materials and spintronics; heterostructures and quantum devices; engineering of the electrical and optical properties of semiconductors; crystal growth mechanisms; reliability, defect density, intrinsic impurities and defects.