Gallium arsenide-enabled spatial-polarization-frequency multiplexing metasurface for terahertz encrypted communication

IF 4.6 3区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC
Mingliang Zhao , You Li , Xunjun He , Ying Zhang
{"title":"Gallium arsenide-enabled spatial-polarization-frequency multiplexing metasurface for terahertz encrypted communication","authors":"Mingliang Zhao ,&nbsp;You Li ,&nbsp;Xunjun He ,&nbsp;Ying Zhang","doi":"10.1016/j.mssp.2025.110042","DOIUrl":null,"url":null,"abstract":"<div><div>Robust information security is a fundamental imperative for all facets of the modern digital society. To address this critical need, we introduce a spatial-polarization-frequency multiplexing metasurface enabled by gallium arsenide (GaAs) for terahertz encrypted communication in this paper. The incorporation of GaAs and vanadium dioxide (VO<sub>2</sub>) as active materials enables independent control for 16 channels. In detail, GaAs transitions to a low-resistivity state under optical pumping. The metasurface independently <strong>manipulates incident waves</strong> at 0.76 THz and 1.32 THz, each with selectable <em>x</em>-LP or <em>y</em>-LP, propagating along ± <em>z</em> directions to generate 8 channels. Without optical pumping, GaAs transitions to a high-resistivity state. While VO<sub>2</sub> is in the insulating state, the metasurface independently manipulates incident 0.9 THz waves with <em>x</em>-LP and <em>y</em>-LP polarization propagating along ± <em>z</em> directions, yielding 4 channels. While VO<sub>2</sub> is in the metallic state, the metasurface reconfigures its phase distribution along ± <em>z</em> directions respectively, generating an additional 4 channels. Thus, these 16 channels can generate distinct holographic images representing alphanumeric characters (A-F, 0–9), each corresponding to a unique Base-16 encoding symbol. During communication, the receiver must utilize the unique metasurface as a physical key for successful decryption. In addition, decryption strictly requires predetermined conditions including specific incident direction, operating frequency, polarization signature, and phase transition state of the active materials. These combined requirements act as multiple locks, significantly boosting the security of the optical communication approach.</div></div>","PeriodicalId":18240,"journal":{"name":"Materials Science in Semiconductor Processing","volume":"201 ","pages":"Article 110042"},"PeriodicalIF":4.6000,"publicationDate":"2025-09-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Materials Science in Semiconductor Processing","FirstCategoryId":"5","ListUrlMain":"https://www.sciencedirect.com/science/article/pii/S1369800125007796","RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
引用次数: 0

Abstract

Robust information security is a fundamental imperative for all facets of the modern digital society. To address this critical need, we introduce a spatial-polarization-frequency multiplexing metasurface enabled by gallium arsenide (GaAs) for terahertz encrypted communication in this paper. The incorporation of GaAs and vanadium dioxide (VO2) as active materials enables independent control for 16 channels. In detail, GaAs transitions to a low-resistivity state under optical pumping. The metasurface independently manipulates incident waves at 0.76 THz and 1.32 THz, each with selectable x-LP or y-LP, propagating along ± z directions to generate 8 channels. Without optical pumping, GaAs transitions to a high-resistivity state. While VO2 is in the insulating state, the metasurface independently manipulates incident 0.9 THz waves with x-LP and y-LP polarization propagating along ± z directions, yielding 4 channels. While VO2 is in the metallic state, the metasurface reconfigures its phase distribution along ± z directions respectively, generating an additional 4 channels. Thus, these 16 channels can generate distinct holographic images representing alphanumeric characters (A-F, 0–9), each corresponding to a unique Base-16 encoding symbol. During communication, the receiver must utilize the unique metasurface as a physical key for successful decryption. In addition, decryption strictly requires predetermined conditions including specific incident direction, operating frequency, polarization signature, and phase transition state of the active materials. These combined requirements act as multiple locks, significantly boosting the security of the optical communication approach.
用于太赫兹加密通信的砷化镓空间极化频率复用超表面
强大的信息安全是现代数字社会各个方面的基本要求。为了解决这一关键需求,我们在本文中引入了一种由砷化镓(GaAs)实现的用于太赫兹加密通信的空间极化频率复用超表面。砷化镓和二氧化钒(VO2)作为活性材料的掺入可以独立控制16个通道。在光泵浦作用下,砷化镓跃迁到低电阻状态。超表面可以独立操纵0.76 THz和1.32 THz的入射波,每个入射波都有可选的x-LP或y-LP,沿±z方向传播,产生8个通道。没有光泵浦,砷化镓转变为高电阻状态。当VO2处于绝缘状态时,超表面独立操纵入射0.9太赫兹波,x-LP和y-LP极化沿±z方向传播,产生4个通道。当VO2处于金属态时,超表面分别沿±z方向重新配置其相分布,产生额外的4个通道。因此,这16个通道可以生成不同的全息图像,表示字母数字字符(a - f, 0-9),每个图像对应一个唯一的Base-16编码符号。在通信过程中,接收方必须利用唯一的元表面作为成功解密的物理密钥。此外,解密严格要求活性物质的特定入射方向、工作频率、极化特征、相变状态等预定条件。这些组合的需求就像多个锁一样,大大提高了光通信方法的安全性。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
求助全文
约1分钟内获得全文 求助全文
来源期刊
Materials Science in Semiconductor Processing
Materials Science in Semiconductor Processing 工程技术-材料科学:综合
CiteScore
8.00
自引率
4.90%
发文量
780
审稿时长
42 days
期刊介绍: Materials Science in Semiconductor Processing provides a unique forum for the discussion of novel processing, applications and theoretical studies of functional materials and devices for (opto)electronics, sensors, detectors, biotechnology and green energy. Each issue will aim to provide a snapshot of current insights, new achievements, breakthroughs and future trends in such diverse fields as microelectronics, energy conversion and storage, communications, biotechnology, (photo)catalysis, nano- and thin-film technology, hybrid and composite materials, chemical processing, vapor-phase deposition, device fabrication, and modelling, which are the backbone of advanced semiconductor processing and applications. Coverage will include: advanced lithography for submicron devices; etching and related topics; ion implantation; damage evolution and related issues; plasma and thermal CVD; rapid thermal processing; advanced metallization and interconnect schemes; thin dielectric layers, oxidation; sol-gel processing; chemical bath and (electro)chemical deposition; compound semiconductor processing; new non-oxide materials and their applications; (macro)molecular and hybrid materials; molecular dynamics, ab-initio methods, Monte Carlo, etc.; new materials and processes for discrete and integrated circuits; magnetic materials and spintronics; heterostructures and quantum devices; engineering of the electrical and optical properties of semiconductors; crystal growth mechanisms; reliability, defect density, intrinsic impurities and defects.
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
确定
请完成安全验证×
copy
已复制链接
快去分享给好友吧!
我知道了
右上角分享
点击右上角分享
0
联系我们:info@booksci.cn Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号:604180095
Book学术官方微信