Yuanyuan Zhu , Xin Wang , Miao Zhang , Yunfei Zhang , Shuo Liu , Hongjun Wang
{"title":"Regulating oxygen vacancies to achieve stable non-volatile switching characteristics and neuromorphic computing in a-Ga2O3 based memristors","authors":"Yuanyuan Zhu , Xin Wang , Miao Zhang , Yunfei Zhang , Shuo Liu , Hongjun Wang","doi":"10.1016/j.mssp.2025.110056","DOIUrl":null,"url":null,"abstract":"<div><div>Gallium oxide has attracted considerable interest as a promising resistive switching (RS) layer for memristors, owing to its wide bandgap, high breakdown electric field, and excellent thermal stability. However, practical adoption remains hindered by challenges such as relatively low switching ratio and insufficient cycling stability, which limit device performance and reliability. Herein, amorphous Ga<sub>2</sub>O<sub>3</sub> (a-Ga<sub>2</sub>O<sub>3</sub>) films serve as the RS layer to construct the memristors, where oxygen vacancies are precisely regulated to enhance the switching performance. The W/a-Ga<sub>2</sub>O<sub>3</sub>/Pt device fabricated with an argon-to-oxygen ratio of 40:10 outperforms those made with other ratios in RS behaviors, demonstrating a larger switching window (∼10<sup>3</sup>), superior retention (10<sup>4</sup> s), faster response times (90 μs), high stability, and concentrated distributions of switching voltages. Furthermore, we elucidate the electrical transport mechanisms and conductive filaments (CFs) models responsible for the enhanced switching performance. More encouragingly, the a-Ga<sub>2</sub>O<sub>3</sub> device achieved up to 98.67 % accuracy on the Mixed National Institute of Standards and Technology image recognition task. This work provides an in-depth exploration of a-Ga<sub>2</sub>O<sub>3</sub>-based memristors, offering a promising avenue for switching materials in storage and neuromorphic computing applications.</div></div>","PeriodicalId":18240,"journal":{"name":"Materials Science in Semiconductor Processing","volume":"201 ","pages":"Article 110056"},"PeriodicalIF":4.6000,"publicationDate":"2025-09-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Materials Science in Semiconductor Processing","FirstCategoryId":"5","ListUrlMain":"https://www.sciencedirect.com/science/article/pii/S1369800125007930","RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
引用次数: 0
Abstract
Gallium oxide has attracted considerable interest as a promising resistive switching (RS) layer for memristors, owing to its wide bandgap, high breakdown electric field, and excellent thermal stability. However, practical adoption remains hindered by challenges such as relatively low switching ratio and insufficient cycling stability, which limit device performance and reliability. Herein, amorphous Ga2O3 (a-Ga2O3) films serve as the RS layer to construct the memristors, where oxygen vacancies are precisely regulated to enhance the switching performance. The W/a-Ga2O3/Pt device fabricated with an argon-to-oxygen ratio of 40:10 outperforms those made with other ratios in RS behaviors, demonstrating a larger switching window (∼103), superior retention (104 s), faster response times (90 μs), high stability, and concentrated distributions of switching voltages. Furthermore, we elucidate the electrical transport mechanisms and conductive filaments (CFs) models responsible for the enhanced switching performance. More encouragingly, the a-Ga2O3 device achieved up to 98.67 % accuracy on the Mixed National Institute of Standards and Technology image recognition task. This work provides an in-depth exploration of a-Ga2O3-based memristors, offering a promising avenue for switching materials in storage and neuromorphic computing applications.
期刊介绍:
Materials Science in Semiconductor Processing provides a unique forum for the discussion of novel processing, applications and theoretical studies of functional materials and devices for (opto)electronics, sensors, detectors, biotechnology and green energy.
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Coverage will include: advanced lithography for submicron devices; etching and related topics; ion implantation; damage evolution and related issues; plasma and thermal CVD; rapid thermal processing; advanced metallization and interconnect schemes; thin dielectric layers, oxidation; sol-gel processing; chemical bath and (electro)chemical deposition; compound semiconductor processing; new non-oxide materials and their applications; (macro)molecular and hybrid materials; molecular dynamics, ab-initio methods, Monte Carlo, etc.; new materials and processes for discrete and integrated circuits; magnetic materials and spintronics; heterostructures and quantum devices; engineering of the electrical and optical properties of semiconductors; crystal growth mechanisms; reliability, defect density, intrinsic impurities and defects.