《模拟阳光照射下原位制备三维花状BiOBr/Bi24O31Br10复合材料用于环丙沙星降解的退火水热法》

IF 4.6 3区工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC

Materials Science in Semiconductor Processing Pub Date : 2025-09-13 DOI:10.1016/j.mssp.2025.110060

L. Mllaoiy , S. Bikerchalen , B. Akhsassi , B. Bakiz , S. Villain , A. Taoufyq , F. Guinneton , H. Hajjoul , J.-R. Gavarri , A. Benlhachemi

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引用次数: 0

摘要

本文采用简单的两步水热退火工艺合成了BiOBr/Bi24O31Br10层次化光催化剂。与纯BiOBr和Bi24O31Br10相比，BiOBr/Bi24O31Br10微观结构的光催化性能显著增强。在模拟太阳照射下，60 min内对环丙沙星（CIP）的降解率达到94%，反应速率是纯Bi24O31Br10的5.5倍。Rhodamine B （RhB）也在20 min内被完全降解。这种改善归因于几种协同效应：增加的BET表面积提供了更多的活性位点；对CIP的吸附能力增强，有利于其高效降解；扩大的太阳光吸收范围促进了载流子的产生，其寿命延长了5.70 ns，超过了单个组分的寿命。此外，系统考察了初始pH、光催化剂用量、初始污染物浓度、光强等操作参数的影响。

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“In situ preparation of 3D flower like BiOBr/Bi24O31Br10 composite by annealing hydrothermal method for the ciprofloxacin degradation under simulated sunlight irradiation”

In this work, a hierarchical photocatalyst, BiOBr/Bi₂₄O₃₁Br₁₀, was synthesized via a simple two-step hydrothermal and annealing process. The BiOBr/Bi₂₄O₃₁Br₁₀ microstructure exhibited significantly enhanced photocatalytic performance compared to pure BiOBr and Bi₂₄O₃₁Br₁₀. Under simulated solar irradiation, it achieved 94 % degradation of ciprofloxacin (CIP) in 60 min, with a reaction rate 5.5 times higher than that of pure Bi₂₄O₃₁Br₁₀. Rhodamine B (RhB) was also thoroughly degraded in 20 min. This improvement was attributed to several synergistic effects: the increased BET surface area provided more active sites; the enhanced adsorption capacity toward CIP facilitated its efficient degradation; and the broadened sunlight absorption range promoted the generation of charge carriers with an extended lifetime of 5.70 ns, surpassing that of the individual components. Additionally, the influence of operating parameters such as initial pH, photocatalyst dosage, initial pollutant concentration, and light intensity was systematically investigated.

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来源期刊

Materials Science in Semiconductor Processing 工程技术-材料科学：综合

CiteScore

8.00

自引率

4.90%

发文量

780

审稿时长

42 days

期刊介绍： Materials Science in Semiconductor Processing provides a unique forum for the discussion of novel processing, applications and theoretical studies of functional materials and devices for (opto)electronics, sensors, detectors, biotechnology and green energy. Each issue will aim to provide a snapshot of current insights, new achievements, breakthroughs and future trends in such diverse fields as microelectronics, energy conversion and storage, communications, biotechnology, (photo)catalysis, nano- and thin-film technology, hybrid and composite materials, chemical processing, vapor-phase deposition, device fabrication, and modelling, which are the backbone of advanced semiconductor processing and applications. Coverage will include: advanced lithography for submicron devices; etching and related topics; ion implantation; damage evolution and related issues; plasma and thermal CVD; rapid thermal processing; advanced metallization and interconnect schemes; thin dielectric layers, oxidation; sol-gel processing; chemical bath and (electro)chemical deposition; compound semiconductor processing; new non-oxide materials and their applications; (macro)molecular and hybrid materials; molecular dynamics, ab-initio methods, Monte Carlo, etc.; new materials and processes for discrete and integrated circuits; magnetic materials and spintronics; heterostructures and quantum devices; engineering of the electrical and optical properties of semiconductors; crystal growth mechanisms; reliability, defect density, intrinsic impurities and defects.