过渡金属和氮共掺杂石墨烯作为有毒有害气体分子气敏材料的第一性原理研究

IF 4.6 3区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC
Tianyu Sun , Tao Shen , Chi Liu , Xin Liu , Yue Feng
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引用次数: 0

摘要

一氧化碳(CO)、二氧化硫(SO2)和氨(NH3)是三种普遍存在的有害气体,对人类健康和环境构成重大威胁。因此,迫切需要高效的气敏材料来检测有害气体。完美石墨烯(PG)由于其巨大的表面积和优越的电特性被认为是一种优秀的气敏材料,但其化学惰性限制了其灵敏度。本研究利用密度泛函理论(DFT)在PG表面诱导缺陷,从而产生缺陷石墨烯(DG)。随后,将过渡金属原子钪(Sc)、钛(Ti)、钒(V)、铬(Cr)与氮(N)原子共掺杂到DG中,生成MNxC4-x-DG (x = 0-4, M = Sc/Ti/V/Cr)结构,并对其稳定性进行检测。以MN4-DG (M = Sc, Ti, V, Cr)为最稳定构型,研究了其对三种气体的吸附行为。研究结果表明,缺陷的形成和过渡金属与N原子的共掺杂增强了PG对三种有毒有害气体的吸附能力。从恢复时间、灵敏度和选择性等方面分析了材料的质量。结果表明,TiN4-DG和CrN4-DG结构具有再生能力、快速响应特性和选择性,为开发新型气敏材料奠定了理论基础。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
First-principles investigation of transition metal and nitrogen co-doped graphene as gas-sensing materials for poisonous and hazardous gas molecules
Carbon monoxide (CO), sulfur dioxide (SO2), and ammonia (NH3) are three prevalent hazardous gases that pose significant threats to human health and the environment. Therefore, there is an urgent need for highly efficient gas-sensitive materials to detect harmful gases. Perfect graphene (PG) is considered an excellent gas-sensitive material because of its substantial surface area and superior electrical characteristics, yet its chemical inertness restricts its sensitivity. This study utilized density functional theory (DFT) to induce defects onto the PG surface, thus creating defective graphene (DG). Thereafter, transition metal atoms: scandium(Sc), titanium(Ti), vanadium(V), and chromium(Cr) were co-doped with nitrogen(N) atoms into DG to produce MNxC4-x-DG (x = 0–4, M = Sc/Ti/V/Cr) structures, and their stability was examined. Based on the most stable configuration MN4-DG (M = Sc, Ti, V, Cr), its adsorption behavior for the three gases was studied. The research results indicate that the formation of defects and the co-doping of transition metals and N atoms enhance the adsorption capacity of PG for three toxic and harmful gases. The material qualities were analyzed in terms of recovery time, sensitivity, and selectivity. The findings indicated that the TiN4-DG and CrN4-DG structures demonstrate regenerative ability, rapid response characteristics and selectivity establishing a theoretical foundation for advancing novel gas-sensitive materials.
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来源期刊
Materials Science in Semiconductor Processing
Materials Science in Semiconductor Processing 工程技术-材料科学:综合
CiteScore
8.00
自引率
4.90%
发文量
780
审稿时长
42 days
期刊介绍: Materials Science in Semiconductor Processing provides a unique forum for the discussion of novel processing, applications and theoretical studies of functional materials and devices for (opto)electronics, sensors, detectors, biotechnology and green energy. Each issue will aim to provide a snapshot of current insights, new achievements, breakthroughs and future trends in such diverse fields as microelectronics, energy conversion and storage, communications, biotechnology, (photo)catalysis, nano- and thin-film technology, hybrid and composite materials, chemical processing, vapor-phase deposition, device fabrication, and modelling, which are the backbone of advanced semiconductor processing and applications. Coverage will include: advanced lithography for submicron devices; etching and related topics; ion implantation; damage evolution and related issues; plasma and thermal CVD; rapid thermal processing; advanced metallization and interconnect schemes; thin dielectric layers, oxidation; sol-gel processing; chemical bath and (electro)chemical deposition; compound semiconductor processing; new non-oxide materials and their applications; (macro)molecular and hybrid materials; molecular dynamics, ab-initio methods, Monte Carlo, etc.; new materials and processes for discrete and integrated circuits; magnetic materials and spintronics; heterostructures and quantum devices; engineering of the electrical and optical properties of semiconductors; crystal growth mechanisms; reliability, defect density, intrinsic impurities and defects.
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