利用T.E.S.T和机器学习评估抗生素光催化降解过程中的毒性变化

IF 4.6 3区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC
Qiaoyu Zhang , Qiao Shen , Fumin Peng , Wenjing Bian , Xu Huang , Yong Zhang , Jian Huang , Hua Zhang , Tao Luo
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引用次数: 0

摘要

本研究选择盐酸多西环素(DOX)作为代表性抗生素,二氧化钛纳米颗粒(P25)作为典型光催化剂,研究光催化降解过程。本研究有三个关键创新:(1)通过原位活性氧(ROS)验证(确定了1O2、•O2-和h+的主导作用)和液相色谱-质谱/二维相关光谱(LC-MS/2D-COS)多技术中间体跟踪相结合,系统阐明了P25降解DOX的途径。该方法证实了1O2、•O2-和h+直接参与反应,并确定了官能团变化的顺序。(2)建立了随机森林(RF)模型,并将其与T.E.S.T.模拟相结合,构建了时间分辨的毒性演化曲线。采用T.E.S.T.毒性评价软件对中间体的急性毒性、发育毒性和致突变性进行评价。建立的射频模型预测精度较高,决定系数(R2)为0.932,平均绝对误差(MAE)为0.018,均方根误差(RMSE)为0.039。该模型可以跟踪光催化中间体的变化,并结合毒性模拟,便于预测不同降解阶段的毒性水平,从而得出光催化降解后的毒性演化模式。(3)本研究通过动态毒性预测建立了降解终点优化的新框架,为光催化水处理的生态风险最小化提供了战略解决方案。
本文章由计算机程序翻译,如有差异,请以英文原文为准。

Assessment of toxicity changes during photocatalytic degradation of antibiotics using T.E.S.T and machine learning

Assessment of toxicity changes during photocatalytic degradation of antibiotics using T.E.S.T and machine learning
This study selected Doxycycline hydrochloride (DOX) as a representative antibiotic and titanium dioxide nanoparticles (P25) as a typical photocatalyst to investigate the photocatalytic degradation process. The research demonstrates three key innovations: (1) The degradation pathway of DOX by P25 was systematically elucidated through the combination of in situ reactive oxygen species (ROS) verification (confirming the dominant roles of 1O2, •O2-, and h+) and multi-technique intermediate tracking using liquid chromatography-mass spectrometry/two-dimensional correlation spectroscopy (LC-MS/2D-COS). This approach confirmed the direct involvement of 1O2, •O2-, and h+ in the reaction and resolved the sequence of functional group changes. (2) A random forest (RF) model was developed and integrated with T.E.S.T. simulations to construct time-resolved toxicity evolution profiles. The acute toxicity, developmental toxicity, and mutagenicity of intermediates were evaluated using the T.E.S.T. toxicity assessment software. The established RF model demonstrated high prediction accuracy with a coefficient of determination (R2) of 0.932, mean absolute error (MAE) of 0.018, and root mean square error (RMSE) of 0.039. This model enables tracking of photocatalytic intermediate variations and, combined with toxicity simulation, facilitates the prediction of toxicity levels at different degradation stages, thereby deriving toxicity evolution patterns after photocatalytic degradation. (3) This study establishes a novel framework for degradation endpoint optimization through dynamic toxicity prediction, providing a strategic solution for minimizing ecological risks in photocatalytic water treatment.
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来源期刊
Materials Science in Semiconductor Processing
Materials Science in Semiconductor Processing 工程技术-材料科学:综合
CiteScore
8.00
自引率
4.90%
发文量
780
审稿时长
42 days
期刊介绍: Materials Science in Semiconductor Processing provides a unique forum for the discussion of novel processing, applications and theoretical studies of functional materials and devices for (opto)electronics, sensors, detectors, biotechnology and green energy. Each issue will aim to provide a snapshot of current insights, new achievements, breakthroughs and future trends in such diverse fields as microelectronics, energy conversion and storage, communications, biotechnology, (photo)catalysis, nano- and thin-film technology, hybrid and composite materials, chemical processing, vapor-phase deposition, device fabrication, and modelling, which are the backbone of advanced semiconductor processing and applications. Coverage will include: advanced lithography for submicron devices; etching and related topics; ion implantation; damage evolution and related issues; plasma and thermal CVD; rapid thermal processing; advanced metallization and interconnect schemes; thin dielectric layers, oxidation; sol-gel processing; chemical bath and (electro)chemical deposition; compound semiconductor processing; new non-oxide materials and their applications; (macro)molecular and hybrid materials; molecular dynamics, ab-initio methods, Monte Carlo, etc.; new materials and processes for discrete and integrated circuits; magnetic materials and spintronics; heterostructures and quantum devices; engineering of the electrical and optical properties of semiconductors; crystal growth mechanisms; reliability, defect density, intrinsic impurities and defects.
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