U. Chalapathi , K. Ashok , M. Seshadri , Radhalayam Dhanalakshmi , Venkateswarlu Gonuguntla , Adem Sreedhar , Vasudeva Reddy Minnam Reddy , Sambasivam Sangaraju , Mohd Shkir , Si-Hyun Park
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引用次数: 0
Abstract
Bournonite (CuPbSbS3) exhibits promising characteristics as a photovoltaic light harvester. However, the solution-based methods commonly employed for its synthesis and device fabrication have prompted the exploration of physical vapor deposition (PVD) techniques. In this study, CuPbSbS3 thin films and corresponding solar cells were synthesized using a two-stage approach: thermal evaporation of Sb/Cu/Pb/Cu metal precursors followed by sulfurization. The effect of sulfurization duration (5–30 min) on the growth and physical properties of the Bournonite thin films was systematically investigated. Films sulfurized for a short duration of 5 min exhibited minor PbS and CuSbS2 secondary phases, crystallite sizes of approximately 68.1 nm, and grain sizes ranging from 0.5 to . Increasing the sulfurization duration to 10–30 min eliminated the PbS secondary phase, improved stoichiometry and crystallinity (up to 71 nm), and resulted in larger grains (1.0–). The films demonstrated high optical absorption coefficients exceeding 104 cm−1 in the visible region and a direct bandgap of 1.37–1.41 eV. Thin-film solar cells fabricated using these absorber layers showed a decrease in performance with longer sulfurization times, attributed to reduced carrier mobility. As the sulfurization duration increased from 5 to 30 min, the device efficiency dropped from 0.13% to 0.08%, short-circuit current density (J) from 1.59 to 1.28 mA/cm2, open-circuit voltage (V) from 269.1 to 220.9 mV, and fill factor (FF) from 29.6% to 26.6%. These promising initial results establish a foundation for the development of high-efficiency Bournonite thin-film solar cells using PVD techniques.
期刊介绍:
Materials Science in Semiconductor Processing provides a unique forum for the discussion of novel processing, applications and theoretical studies of functional materials and devices for (opto)electronics, sensors, detectors, biotechnology and green energy.
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Coverage will include: advanced lithography for submicron devices; etching and related topics; ion implantation; damage evolution and related issues; plasma and thermal CVD; rapid thermal processing; advanced metallization and interconnect schemes; thin dielectric layers, oxidation; sol-gel processing; chemical bath and (electro)chemical deposition; compound semiconductor processing; new non-oxide materials and their applications; (macro)molecular and hybrid materials; molecular dynamics, ab-initio methods, Monte Carlo, etc.; new materials and processes for discrete and integrated circuits; magnetic materials and spintronics; heterostructures and quantum devices; engineering of the electrical and optical properties of semiconductors; crystal growth mechanisms; reliability, defect density, intrinsic impurities and defects.