Two-stage synthesis of Bournonite (CuPbSbS3) thin films for photovoltaic applications

IF 4.6 3区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC
U. Chalapathi , K. Ashok , M. Seshadri , Radhalayam Dhanalakshmi , Venkateswarlu Gonuguntla , Adem Sreedhar , Vasudeva Reddy Minnam Reddy , Sambasivam Sangaraju , Mohd Shkir , Si-Hyun Park
{"title":"Two-stage synthesis of Bournonite (CuPbSbS3) thin films for photovoltaic applications","authors":"U. Chalapathi ,&nbsp;K. Ashok ,&nbsp;M. Seshadri ,&nbsp;Radhalayam Dhanalakshmi ,&nbsp;Venkateswarlu Gonuguntla ,&nbsp;Adem Sreedhar ,&nbsp;Vasudeva Reddy Minnam Reddy ,&nbsp;Sambasivam Sangaraju ,&nbsp;Mohd Shkir ,&nbsp;Si-Hyun Park","doi":"10.1016/j.mssp.2025.110122","DOIUrl":null,"url":null,"abstract":"<div><div>Bournonite (CuPbSbS<sub>3</sub>) exhibits promising characteristics as a photovoltaic light harvester. However, the solution-based methods commonly employed for its synthesis and device fabrication have prompted the exploration of physical vapor deposition (PVD) techniques. In this study, CuPbSbS<sub>3</sub> thin films and corresponding solar cells were synthesized using a two-stage approach: thermal evaporation of Sb/Cu/Pb/Cu metal precursors followed by sulfurization. The effect of sulfurization duration (5–30 min) on the growth and physical properties of the Bournonite thin films was systematically investigated. Films sulfurized for a short duration of 5 min exhibited minor PbS and CuSbS<sub>2</sub> secondary phases, crystallite sizes of approximately 68.1 nm, and grain sizes ranging from 0.5 to <span><math><mrow><mn>1</mn><mo>.</mo><mn>0</mn><mspace></mspace><mi>μ</mi><mi>m</mi></mrow></math></span>. Increasing the sulfurization duration to 10–30 min eliminated the PbS secondary phase, improved stoichiometry and crystallinity (up to 71 nm), and resulted in larger grains (1.0–<span><math><mrow><mn>1</mn><mo>.</mo><mn>5</mn><mspace></mspace><mi>μ</mi><mi>m</mi></mrow></math></span>). The films demonstrated high optical absorption coefficients exceeding 10<sup>4</sup> cm<sup>−1</sup> in the visible region and a direct bandgap of 1.37–1.41 eV. Thin-film solar cells fabricated using these absorber layers showed a decrease in performance with longer sulfurization times, attributed to reduced carrier mobility. As the sulfurization duration increased from 5 to 30 min, the device efficiency dropped from 0.13% to 0.08%, short-circuit current density (J<span><math><msub><mrow></mrow><mrow><mi>s</mi><mi>c</mi></mrow></msub></math></span>) from 1.59 to 1.28 mA/cm<sup>2</sup>, open-circuit voltage (V<span><math><msub><mrow></mrow><mrow><mi>o</mi><mi>c</mi></mrow></msub></math></span>) from 269.1 to 220.9 mV, and fill factor (FF) from 29.6% to 26.6%. These promising initial results establish a foundation for the development of high-efficiency Bournonite thin-film solar cells using PVD techniques.</div></div>","PeriodicalId":18240,"journal":{"name":"Materials Science in Semiconductor Processing","volume":"202 ","pages":"Article 110122"},"PeriodicalIF":4.6000,"publicationDate":"2025-10-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Materials Science in Semiconductor Processing","FirstCategoryId":"5","ListUrlMain":"https://www.sciencedirect.com/science/article/pii/S1369800125008601","RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
引用次数: 0

Abstract

Bournonite (CuPbSbS3) exhibits promising characteristics as a photovoltaic light harvester. However, the solution-based methods commonly employed for its synthesis and device fabrication have prompted the exploration of physical vapor deposition (PVD) techniques. In this study, CuPbSbS3 thin films and corresponding solar cells were synthesized using a two-stage approach: thermal evaporation of Sb/Cu/Pb/Cu metal precursors followed by sulfurization. The effect of sulfurization duration (5–30 min) on the growth and physical properties of the Bournonite thin films was systematically investigated. Films sulfurized for a short duration of 5 min exhibited minor PbS and CuSbS2 secondary phases, crystallite sizes of approximately 68.1 nm, and grain sizes ranging from 0.5 to 1.0μm. Increasing the sulfurization duration to 10–30 min eliminated the PbS secondary phase, improved stoichiometry and crystallinity (up to 71 nm), and resulted in larger grains (1.0–1.5μm). The films demonstrated high optical absorption coefficients exceeding 104 cm−1 in the visible region and a direct bandgap of 1.37–1.41 eV. Thin-film solar cells fabricated using these absorber layers showed a decrease in performance with longer sulfurization times, attributed to reduced carrier mobility. As the sulfurization duration increased from 5 to 30 min, the device efficiency dropped from 0.13% to 0.08%, short-circuit current density (Jsc) from 1.59 to 1.28 mA/cm2, open-circuit voltage (Voc) from 269.1 to 220.9 mV, and fill factor (FF) from 29.6% to 26.6%. These promising initial results establish a foundation for the development of high-efficiency Bournonite thin-film solar cells using PVD techniques.
两段合成光伏用波诺矿(CuPbSbS3)薄膜
Bournonite (CuPbSbS3)表现出作为光伏光收集器的良好特性。然而,通常用于其合成和器件制造的基于溶液的方法促使了物理气相沉积(PVD)技术的探索。本研究采用Sb/Cu/Pb/Cu金属前驱体热蒸发和硫化两阶段法制备CuPbSbS3薄膜和相应的太阳能电池。系统地研究了硫化时间(5 ~ 30 min)对波仑矿薄膜生长和物理性能的影响。短时间硫化5 min后,膜中出现了少量的PbS和CuSbS2次级相,晶粒尺寸在0.5 ~ 1.0μm之间,晶粒尺寸约为68.1 nm。将硫化时间延长至10-30 min,消除了PbS二相,改善了化学计量学和结晶度(可达71 nm),导致晶粒更大(1.0-1.5μm)。薄膜的可见光吸收系数超过104 cm−1,直接带隙为1.37 ~ 1.41 eV。由于载流子迁移率降低,使用这些吸收层制造的薄膜太阳能电池的性能随着硫化时间的延长而下降。随着硫化时间从5 min增加到30 min,器件效率从0.13%下降到0.08%,短路电流密度(Jsc)从1.59 mA/cm2下降到1.28 mA/cm2,开路电压(Voc)从269.1 mV下降到220.9 mV,填充因子(FF)从29.6%下降到26.6%。这些有希望的初步结果为利用PVD技术开发高效的波旁矿薄膜太阳能电池奠定了基础。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
求助全文
约1分钟内获得全文 求助全文
来源期刊
Materials Science in Semiconductor Processing
Materials Science in Semiconductor Processing 工程技术-材料科学:综合
CiteScore
8.00
自引率
4.90%
发文量
780
审稿时长
42 days
期刊介绍: Materials Science in Semiconductor Processing provides a unique forum for the discussion of novel processing, applications and theoretical studies of functional materials and devices for (opto)electronics, sensors, detectors, biotechnology and green energy. Each issue will aim to provide a snapshot of current insights, new achievements, breakthroughs and future trends in such diverse fields as microelectronics, energy conversion and storage, communications, biotechnology, (photo)catalysis, nano- and thin-film technology, hybrid and composite materials, chemical processing, vapor-phase deposition, device fabrication, and modelling, which are the backbone of advanced semiconductor processing and applications. Coverage will include: advanced lithography for submicron devices; etching and related topics; ion implantation; damage evolution and related issues; plasma and thermal CVD; rapid thermal processing; advanced metallization and interconnect schemes; thin dielectric layers, oxidation; sol-gel processing; chemical bath and (electro)chemical deposition; compound semiconductor processing; new non-oxide materials and their applications; (macro)molecular and hybrid materials; molecular dynamics, ab-initio methods, Monte Carlo, etc.; new materials and processes for discrete and integrated circuits; magnetic materials and spintronics; heterostructures and quantum devices; engineering of the electrical and optical properties of semiconductors; crystal growth mechanisms; reliability, defect density, intrinsic impurities and defects.
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
确定
请完成安全验证×
copy
已复制链接
快去分享给好友吧!
我知道了
右上角分享
点击右上角分享
0
联系我们:info@booksci.cn Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号:604180095
Book学术官方微信