Reliable fabrication of vanadium-based films and their visible-infrared spectral compatibility modulation

IF 4.6 3区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC
Wenqi Xiong , Kaixi Bi , Longhao Liu , Guangchen Yin , Hao Liu , Donghui Huang , Jialiang Chen , Xinyu liang , Linyu Mei , Xiujian Chou
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引用次数: 0

Abstract

Vanadium pentoxide (V2O5) films exhibit rich electrochemical activity and color variation when combined with Li+ intercalation. Efficient fabrication of these films is essential for the development of smart optoelectronic displays. This study employs an electrochemical deposition method to achieve low-cost, large-area growth of V2O5 films on multiple substrates at room temperature. By depositing V2O5 films on ITO substrates and using external field-driven electron-proton synergistic operation, six different color states were achieved. The elemental composition and valence states of the films after Li+ intercalation were analyzed by transmittance spectral analysis and X-ray photoelectron spectroscopy (XPS). It was quantitatively confirmed that not only V4+ but also a considerable proportion of V3+ was generated in the films under the negative-voltage coloring state, this finding breaks with the conventional knowledge of the coloring end state of V2O5 films. Meanwhile, electrochemical Li + intercalation enables tunable infrared emissivity of the V2O5 films, resulting in a temperature difference of ∼7 °C between the positive and negative voltage intercalation states and highlighting their potential application in dynamic visible-infrared camouflage. This visible-to-infrared dual-mode modulation operates independently of ambient temperature and does not rely on VO2 phase transitions. Combined with photolithographic masks to form optically patterned displays, it provides theoretical and technical support for novel vanadium-based optoelectronic displays.

Abstract Image

钒基薄膜的可靠制备及其可见-红外光谱相容性调制
五氧化二钒(V2O5)薄膜与Li+相结合时表现出丰富的电化学活性和颜色变化。高效制备这些薄膜对于智能光电显示器的发展至关重要。本研究采用电化学沉积的方法,在室温下实现了在多个衬底上低成本、大面积生长V2O5薄膜。通过在ITO衬底上沉积V2O5薄膜,利用外场驱动的电子-质子协同操作,获得了6种不同的颜色态。通过透射光谱分析和x射线光电子能谱(XPS)分析了Li+插层后膜的元素组成和价态。定量证实了在负电压着色状态下,薄膜中不仅产生V4+,还产生相当比例的V3+,这一发现打破了对V2O5薄膜着色终点状态的传统认识。同时,电化学Li +插入使得V2O5薄膜的红外发射率可调,导致正负电压插入状态之间的温差为~ 7°C,并突出了其在动态可见-红外伪装中的潜在应用。这种可见-红外双模调制不依赖于环境温度,也不依赖于VO2相变。与光刻掩模结合形成光学图像化显示器,为新型钒基光电显示器提供理论和技术支持。
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来源期刊
Materials Science in Semiconductor Processing
Materials Science in Semiconductor Processing 工程技术-材料科学:综合
CiteScore
8.00
自引率
4.90%
发文量
780
审稿时长
42 days
期刊介绍: Materials Science in Semiconductor Processing provides a unique forum for the discussion of novel processing, applications and theoretical studies of functional materials and devices for (opto)electronics, sensors, detectors, biotechnology and green energy. Each issue will aim to provide a snapshot of current insights, new achievements, breakthroughs and future trends in such diverse fields as microelectronics, energy conversion and storage, communications, biotechnology, (photo)catalysis, nano- and thin-film technology, hybrid and composite materials, chemical processing, vapor-phase deposition, device fabrication, and modelling, which are the backbone of advanced semiconductor processing and applications. Coverage will include: advanced lithography for submicron devices; etching and related topics; ion implantation; damage evolution and related issues; plasma and thermal CVD; rapid thermal processing; advanced metallization and interconnect schemes; thin dielectric layers, oxidation; sol-gel processing; chemical bath and (electro)chemical deposition; compound semiconductor processing; new non-oxide materials and their applications; (macro)molecular and hybrid materials; molecular dynamics, ab-initio methods, Monte Carlo, etc.; new materials and processes for discrete and integrated circuits; magnetic materials and spintronics; heterostructures and quantum devices; engineering of the electrical and optical properties of semiconductors; crystal growth mechanisms; reliability, defect density, intrinsic impurities and defects.
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