Wenqi Xiong , Kaixi Bi , Longhao Liu , Guangchen Yin , Hao Liu , Donghui Huang , Jialiang Chen , Xinyu liang , Linyu Mei , Xiujian Chou
{"title":"钒基薄膜的可靠制备及其可见-红外光谱相容性调制","authors":"Wenqi Xiong , Kaixi Bi , Longhao Liu , Guangchen Yin , Hao Liu , Donghui Huang , Jialiang Chen , Xinyu liang , Linyu Mei , Xiujian Chou","doi":"10.1016/j.mssp.2025.110109","DOIUrl":null,"url":null,"abstract":"<div><div>Vanadium pentoxide (V<sub>2</sub>O<sub>5</sub>) films exhibit rich electrochemical activity and color variation when combined with Li<sup>+</sup> intercalation. Efficient fabrication of these films is essential for the development of smart optoelectronic displays. This study employs an electrochemical deposition method to achieve low-cost, large-area growth of V<sub>2</sub>O<sub>5</sub> films on multiple substrates at room temperature. By depositing V<sub>2</sub>O<sub>5</sub> films on ITO substrates and using external field-driven electron-proton synergistic operation, six different color states were achieved. The elemental composition and valence states of the films after Li<sup>+</sup> intercalation were analyzed by transmittance spectral analysis and X-ray photoelectron spectroscopy (XPS). It was quantitatively confirmed that not only V<sup>4+</sup> but also a considerable proportion of V<sup>3+</sup> was generated in the films under the negative-voltage coloring state, this finding breaks with the conventional knowledge of the coloring end state of V<sub>2</sub>O<sub>5</sub> films. Meanwhile, electrochemical Li <sup>+</sup> intercalation enables tunable infrared emissivity of the V<sub>2</sub>O<sub>5</sub> films, resulting in a temperature difference of ∼7 °C between the positive and negative voltage intercalation states and highlighting their potential application in dynamic visible-infrared camouflage. This visible-to-infrared dual-mode modulation operates independently of ambient temperature and does not rely on VO<sub>2</sub> phase transitions. Combined with photolithographic masks to form optically patterned displays, it provides theoretical and technical support for novel vanadium-based optoelectronic displays.</div></div>","PeriodicalId":18240,"journal":{"name":"Materials Science in Semiconductor Processing","volume":"202 ","pages":"Article 110109"},"PeriodicalIF":4.6000,"publicationDate":"2025-10-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Reliable fabrication of vanadium-based films and their visible-infrared spectral compatibility modulation\",\"authors\":\"Wenqi Xiong , Kaixi Bi , Longhao Liu , Guangchen Yin , Hao Liu , Donghui Huang , Jialiang Chen , Xinyu liang , Linyu Mei , Xiujian Chou\",\"doi\":\"10.1016/j.mssp.2025.110109\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<div><div>Vanadium pentoxide (V<sub>2</sub>O<sub>5</sub>) films exhibit rich electrochemical activity and color variation when combined with Li<sup>+</sup> intercalation. Efficient fabrication of these films is essential for the development of smart optoelectronic displays. This study employs an electrochemical deposition method to achieve low-cost, large-area growth of V<sub>2</sub>O<sub>5</sub> films on multiple substrates at room temperature. By depositing V<sub>2</sub>O<sub>5</sub> films on ITO substrates and using external field-driven electron-proton synergistic operation, six different color states were achieved. The elemental composition and valence states of the films after Li<sup>+</sup> intercalation were analyzed by transmittance spectral analysis and X-ray photoelectron spectroscopy (XPS). It was quantitatively confirmed that not only V<sup>4+</sup> but also a considerable proportion of V<sup>3+</sup> was generated in the films under the negative-voltage coloring state, this finding breaks with the conventional knowledge of the coloring end state of V<sub>2</sub>O<sub>5</sub> films. Meanwhile, electrochemical Li <sup>+</sup> intercalation enables tunable infrared emissivity of the V<sub>2</sub>O<sub>5</sub> films, resulting in a temperature difference of ∼7 °C between the positive and negative voltage intercalation states and highlighting their potential application in dynamic visible-infrared camouflage. This visible-to-infrared dual-mode modulation operates independently of ambient temperature and does not rely on VO<sub>2</sub> phase transitions. Combined with photolithographic masks to form optically patterned displays, it provides theoretical and technical support for novel vanadium-based optoelectronic displays.</div></div>\",\"PeriodicalId\":18240,\"journal\":{\"name\":\"Materials Science in Semiconductor Processing\",\"volume\":\"202 \",\"pages\":\"Article 110109\"},\"PeriodicalIF\":4.6000,\"publicationDate\":\"2025-10-14\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Materials Science in Semiconductor Processing\",\"FirstCategoryId\":\"5\",\"ListUrlMain\":\"https://www.sciencedirect.com/science/article/pii/S1369800125008479\",\"RegionNum\":3,\"RegionCategory\":\"工程技术\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q2\",\"JCRName\":\"ENGINEERING, ELECTRICAL & ELECTRONIC\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Materials Science in Semiconductor Processing","FirstCategoryId":"5","ListUrlMain":"https://www.sciencedirect.com/science/article/pii/S1369800125008479","RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
Reliable fabrication of vanadium-based films and their visible-infrared spectral compatibility modulation
Vanadium pentoxide (V2O5) films exhibit rich electrochemical activity and color variation when combined with Li+ intercalation. Efficient fabrication of these films is essential for the development of smart optoelectronic displays. This study employs an electrochemical deposition method to achieve low-cost, large-area growth of V2O5 films on multiple substrates at room temperature. By depositing V2O5 films on ITO substrates and using external field-driven electron-proton synergistic operation, six different color states were achieved. The elemental composition and valence states of the films after Li+ intercalation were analyzed by transmittance spectral analysis and X-ray photoelectron spectroscopy (XPS). It was quantitatively confirmed that not only V4+ but also a considerable proportion of V3+ was generated in the films under the negative-voltage coloring state, this finding breaks with the conventional knowledge of the coloring end state of V2O5 films. Meanwhile, electrochemical Li + intercalation enables tunable infrared emissivity of the V2O5 films, resulting in a temperature difference of ∼7 °C between the positive and negative voltage intercalation states and highlighting their potential application in dynamic visible-infrared camouflage. This visible-to-infrared dual-mode modulation operates independently of ambient temperature and does not rely on VO2 phase transitions. Combined with photolithographic masks to form optically patterned displays, it provides theoretical and technical support for novel vanadium-based optoelectronic displays.
期刊介绍:
Materials Science in Semiconductor Processing provides a unique forum for the discussion of novel processing, applications and theoretical studies of functional materials and devices for (opto)electronics, sensors, detectors, biotechnology and green energy.
Each issue will aim to provide a snapshot of current insights, new achievements, breakthroughs and future trends in such diverse fields as microelectronics, energy conversion and storage, communications, biotechnology, (photo)catalysis, nano- and thin-film technology, hybrid and composite materials, chemical processing, vapor-phase deposition, device fabrication, and modelling, which are the backbone of advanced semiconductor processing and applications.
Coverage will include: advanced lithography for submicron devices; etching and related topics; ion implantation; damage evolution and related issues; plasma and thermal CVD; rapid thermal processing; advanced metallization and interconnect schemes; thin dielectric layers, oxidation; sol-gel processing; chemical bath and (electro)chemical deposition; compound semiconductor processing; new non-oxide materials and their applications; (macro)molecular and hybrid materials; molecular dynamics, ab-initio methods, Monte Carlo, etc.; new materials and processes for discrete and integrated circuits; magnetic materials and spintronics; heterostructures and quantum devices; engineering of the electrical and optical properties of semiconductors; crystal growth mechanisms; reliability, defect density, intrinsic impurities and defects.