K.B. Manjunatha , Ramesh S. Bhat , S. Kshama Shetty , Dileep Ramakrishna , Yogesh Kalegowda , Poornesh P , Saikat Chattopadhyay , N. Selvakumar , Harish C. Barshilia
{"title":"在ITO上增强Zn-Ni合金纳米结构的非线性光学响应","authors":"K.B. Manjunatha , Ramesh S. Bhat , S. Kshama Shetty , Dileep Ramakrishna , Yogesh Kalegowda , Poornesh P , Saikat Chattopadhyay , N. Selvakumar , Harish C. Barshilia","doi":"10.1016/j.mssp.2025.110120","DOIUrl":null,"url":null,"abstract":"<div><div>This study reports the fabrication of Zn–Ni alloy nanostructures (ZN) on indium tin oxide (ITO) substrates via electrodeposition and investigates their nonlinear optical (NLO) and optical limiting behavior. Despite the promise of Zn-based nanostructures in NLO devices, their performance remains limited by weak field localization and inadequate surface engineering. This work addresses the knowledge gap by investigating how Ni alloying and surface oxidation in Zn–Ni nanostructures enhance local field effects and defect-mediated transitions, leading to improved nonlinear optical and optical limiting responses. Structural and spectroscopic analyses confirmed the γ-Zn–Ni alloy phase, ZnO/NiO surface oxides, and nanowall network morphologies. The nanostructures exhibited tunable band gaps between 2.95 and 3.17 eV, and high visible photoluminescence from defect states. The presence of surface oxidation suggests that the observed increase in local field effects may result from the high surface oxide density, as confirmed by Raman and photoluminescence data, and defect-mediated transitions, contributing to the observed strong optical nonlinearities. Specific NLO results include a two-photon absorption coefficient of ∼10<sup>−3</sup> cm/W under continuous-wave excitation and a three-photon absorption coefficient of ∼10<sup>−22</sup> m<sup>3</sup>/W<sup>2</sup> under nanosecond pulsed excitation, which are larger than/comparable to typical ZnO-based systems reported in literature. Optical limiting thresholds were also determined and compared with reported oxide nanostructures, demonstrating competitive or improved performance. These findings highlight the novelty of correlating alloy composition, nanowall morphology, and surface oxide density with enhanced third-order nonlinearities and efficient optical limiting, establishing Zn–Ni nanostructures as promising candidates for photonic and laser-protection devices.</div></div>","PeriodicalId":18240,"journal":{"name":"Materials Science in Semiconductor Processing","volume":"202 ","pages":"Article 110120"},"PeriodicalIF":4.6000,"publicationDate":"2025-10-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Enhanced nonlinear optical response of Zn–Ni alloy nanostructures on ITO for optical limiting applications\",\"authors\":\"K.B. Manjunatha , Ramesh S. Bhat , S. Kshama Shetty , Dileep Ramakrishna , Yogesh Kalegowda , Poornesh P , Saikat Chattopadhyay , N. Selvakumar , Harish C. Barshilia\",\"doi\":\"10.1016/j.mssp.2025.110120\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<div><div>This study reports the fabrication of Zn–Ni alloy nanostructures (ZN) on indium tin oxide (ITO) substrates via electrodeposition and investigates their nonlinear optical (NLO) and optical limiting behavior. Despite the promise of Zn-based nanostructures in NLO devices, their performance remains limited by weak field localization and inadequate surface engineering. This work addresses the knowledge gap by investigating how Ni alloying and surface oxidation in Zn–Ni nanostructures enhance local field effects and defect-mediated transitions, leading to improved nonlinear optical and optical limiting responses. Structural and spectroscopic analyses confirmed the γ-Zn–Ni alloy phase, ZnO/NiO surface oxides, and nanowall network morphologies. The nanostructures exhibited tunable band gaps between 2.95 and 3.17 eV, and high visible photoluminescence from defect states. The presence of surface oxidation suggests that the observed increase in local field effects may result from the high surface oxide density, as confirmed by Raman and photoluminescence data, and defect-mediated transitions, contributing to the observed strong optical nonlinearities. Specific NLO results include a two-photon absorption coefficient of ∼10<sup>−3</sup> cm/W under continuous-wave excitation and a three-photon absorption coefficient of ∼10<sup>−22</sup> m<sup>3</sup>/W<sup>2</sup> under nanosecond pulsed excitation, which are larger than/comparable to typical ZnO-based systems reported in literature. Optical limiting thresholds were also determined and compared with reported oxide nanostructures, demonstrating competitive or improved performance. These findings highlight the novelty of correlating alloy composition, nanowall morphology, and surface oxide density with enhanced third-order nonlinearities and efficient optical limiting, establishing Zn–Ni nanostructures as promising candidates for photonic and laser-protection devices.</div></div>\",\"PeriodicalId\":18240,\"journal\":{\"name\":\"Materials Science in Semiconductor Processing\",\"volume\":\"202 \",\"pages\":\"Article 110120\"},\"PeriodicalIF\":4.6000,\"publicationDate\":\"2025-10-14\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Materials Science in Semiconductor Processing\",\"FirstCategoryId\":\"5\",\"ListUrlMain\":\"https://www.sciencedirect.com/science/article/pii/S1369800125008583\",\"RegionNum\":3,\"RegionCategory\":\"工程技术\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q2\",\"JCRName\":\"ENGINEERING, ELECTRICAL & ELECTRONIC\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Materials Science in Semiconductor Processing","FirstCategoryId":"5","ListUrlMain":"https://www.sciencedirect.com/science/article/pii/S1369800125008583","RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
Enhanced nonlinear optical response of Zn–Ni alloy nanostructures on ITO for optical limiting applications
This study reports the fabrication of Zn–Ni alloy nanostructures (ZN) on indium tin oxide (ITO) substrates via electrodeposition and investigates their nonlinear optical (NLO) and optical limiting behavior. Despite the promise of Zn-based nanostructures in NLO devices, their performance remains limited by weak field localization and inadequate surface engineering. This work addresses the knowledge gap by investigating how Ni alloying and surface oxidation in Zn–Ni nanostructures enhance local field effects and defect-mediated transitions, leading to improved nonlinear optical and optical limiting responses. Structural and spectroscopic analyses confirmed the γ-Zn–Ni alloy phase, ZnO/NiO surface oxides, and nanowall network morphologies. The nanostructures exhibited tunable band gaps between 2.95 and 3.17 eV, and high visible photoluminescence from defect states. The presence of surface oxidation suggests that the observed increase in local field effects may result from the high surface oxide density, as confirmed by Raman and photoluminescence data, and defect-mediated transitions, contributing to the observed strong optical nonlinearities. Specific NLO results include a two-photon absorption coefficient of ∼10−3 cm/W under continuous-wave excitation and a three-photon absorption coefficient of ∼10−22 m3/W2 under nanosecond pulsed excitation, which are larger than/comparable to typical ZnO-based systems reported in literature. Optical limiting thresholds were also determined and compared with reported oxide nanostructures, demonstrating competitive or improved performance. These findings highlight the novelty of correlating alloy composition, nanowall morphology, and surface oxide density with enhanced third-order nonlinearities and efficient optical limiting, establishing Zn–Ni nanostructures as promising candidates for photonic and laser-protection devices.
期刊介绍:
Materials Science in Semiconductor Processing provides a unique forum for the discussion of novel processing, applications and theoretical studies of functional materials and devices for (opto)electronics, sensors, detectors, biotechnology and green energy.
Each issue will aim to provide a snapshot of current insights, new achievements, breakthroughs and future trends in such diverse fields as microelectronics, energy conversion and storage, communications, biotechnology, (photo)catalysis, nano- and thin-film technology, hybrid and composite materials, chemical processing, vapor-phase deposition, device fabrication, and modelling, which are the backbone of advanced semiconductor processing and applications.
Coverage will include: advanced lithography for submicron devices; etching and related topics; ion implantation; damage evolution and related issues; plasma and thermal CVD; rapid thermal processing; advanced metallization and interconnect schemes; thin dielectric layers, oxidation; sol-gel processing; chemical bath and (electro)chemical deposition; compound semiconductor processing; new non-oxide materials and their applications; (macro)molecular and hybrid materials; molecular dynamics, ab-initio methods, Monte Carlo, etc.; new materials and processes for discrete and integrated circuits; magnetic materials and spintronics; heterostructures and quantum devices; engineering of the electrical and optical properties of semiconductors; crystal growth mechanisms; reliability, defect density, intrinsic impurities and defects.