发布求助
文献互助 智能选刊 最新文献

2016 IEEE Radiation Effects Data Workshop (REDW)最新文献

筛选
英文 中文
Design and Test of Xilinx Embedded ECC for MicroBlaze Processors MicroBlaze处理器Xilinx嵌入式ECC的设计与测试
2016 IEEE Radiation Effects Data Workshop (REDW) Pub Date : 2016-07-28 DOI: 10.1109/NSREC.2016.7891709
Z. Baker, H. Quinn
{"title":"Design and Test of Xilinx Embedded ECC for MicroBlaze Processors","authors":"Z. Baker, H. Quinn","doi":"10.1109/NSREC.2016.7891709","DOIUrl":"https://doi.org/10.1109/NSREC.2016.7891709","url":null,"abstract":"The Xilinx Virtex-5QV is robust to configuration errors, but will experience Block RAM upsets. Various approaches to scrubbing Block RAM to support the Xilinx MicroBlaze soft processor were tested at LANSCE. Use of the embedded ECC blocks for system memory is contrasted with soft ECC blocks.","PeriodicalId":135325,"journal":{"name":"2016 IEEE Radiation Effects Data Workshop (REDW)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-07-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129616792","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
Heavy-Ion Testing Results for Several Commercial and Military Grade Parts 几种商用和军用级零件的重离子测试结果
2016 IEEE Radiation Effects Data Workshop (REDW) Pub Date : 2016-07-11 DOI: 10.1109/NSREC.2016.7891719
Benjamin R. Buck, K. Bojanowski, A. Cunningham
{"title":"Heavy-Ion Testing Results for Several Commercial and Military Grade Parts","authors":"Benjamin R. Buck, K. Bojanowski, A. Cunningham","doi":"10.1109/NSREC.2016.7891719","DOIUrl":"https://doi.org/10.1109/NSREC.2016.7891719","url":null,"abstract":"We report the results of testing seven components for single event effects at the 88-inch Cyclotron at Lawrence Berkeley National Laboratory.","PeriodicalId":135325,"journal":{"name":"2016 IEEE Radiation Effects Data Workshop (REDW)","volume":"20 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-07-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134290834","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Single Event Effects Testing of a Commercial-Off-The-Shelf Analog-To-Digital Converter in a Camera Application 商用现成模数转换器在相机应用中的单事件效果测试
2016 IEEE Radiation Effects Data Workshop (REDW) Pub Date : 2016-07-11 DOI: 10.1109/NSREC.2016.7891739
M. Campola, C. Thayer, J. Doty, E. Wilcox
{"title":"Single Event Effects Testing of a Commercial-Off-The-Shelf Analog-To-Digital Converter in a Camera Application","authors":"M. Campola, C. Thayer, J. Doty, E. Wilcox","doi":"10.1109/NSREC.2016.7891739","DOIUrl":"https://doi.org/10.1109/NSREC.2016.7891739","url":null,"abstract":"Single event effect data is presented on the Analog Devices AD7984. The recent heavy-ion test results showcase application-specific results for the commercial part in its intended application.","PeriodicalId":135325,"journal":{"name":"2016 IEEE Radiation Effects Data Workshop (REDW)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-07-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130698473","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Single Event Effects in 14-Nm Intel Microprocessors 14纳米英特尔微处理器中的单事件效应
2016 IEEE Radiation Effects Data Workshop (REDW) Pub Date : 2016-07-11 DOI: 10.1109/NSREC.2016.7891738
A. Duncan, C. M. Szabo, D. Bossev, K. Label, Aaron M. Williams, M. Gadlage, J. D. Ingalls, Casey H. Hedge, A. Roach, M. Kay
{"title":"Single Event Effects in 14-Nm Intel Microprocessors","authors":"A. Duncan, C. M. Szabo, D. Bossev, K. Label, Aaron M. Williams, M. Gadlage, J. D. Ingalls, Casey H. Hedge, A. Roach, M. Kay","doi":"10.1109/NSREC.2016.7891738","DOIUrl":"https://doi.org/10.1109/NSREC.2016.7891738","url":null,"abstract":"Heavy ion and proton test results on multiple commercial 14-nm Intel microprocessors are presented. Testing was performed using commercial motherboards with a mixture of commercial and custom software. Machine check errors, system crashes, graphical glitches, and isolated events with temporary or permanent loss of functionality referred to as hard failures were observed during testing. The hard failures observed while testing the Intel 5th Generation Broadwell 14-nm devices were caused by a companion 32-nm planar bulk CMOS die in the multi-chip package.","PeriodicalId":135325,"journal":{"name":"2016 IEEE Radiation Effects Data Workshop (REDW)","volume":"52 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-07-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131875158","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
Measurements of Proton Displacement Damage in Several Commercial Optocouplers 几种商用光耦合器中质子位移损伤的测量
2016 IEEE Radiation Effects Data Workshop (REDW) Pub Date : 2016-07-11 DOI: 10.1109/NSREC.2016.7891723
F. Irom, G. Allen, B. Rax
{"title":"Measurements of Proton Displacement Damage in Several Commercial Optocouplers","authors":"F. Irom, G. Allen, B. Rax","doi":"10.1109/NSREC.2016.7891723","DOIUrl":"https://doi.org/10.1109/NSREC.2016.7891723","url":null,"abstract":"Proton Displacement Damage (DD) measurements on Isolink OLS049, Micropac 66296-101, 66224-103JANTX, and 66179-003 are reported. The 66179-003 has the worst degradation, 13% of the initial CTR remains when it is used with IF = 10 mA at 1 x 1012 1-MeV n/cm2 fluence in Silicon. The remaining CTR percentage for OLS049, 66296-101, and 66224-103JANTX are 21%, 32%, and 79% at 2 x 1012 1-MeV n/cm2 fluence in Silicon, respectively.","PeriodicalId":135325,"journal":{"name":"2016 IEEE Radiation Effects Data Workshop (REDW)","volume":"36 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-07-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114547885","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
Single Event Testing of SDRAM, DDR2 and DDR3 Memories SDRAM, DDR2和DDR3存储器的单事件测试
2016 IEEE Radiation Effects Data Workshop (REDW) Pub Date : 2016-07-11 DOI: 10.1109/NSREC.2016.7891742
S. Guertin, Mehran Amrbar
{"title":"Single Event Testing of SDRAM, DDR2 and DDR3 Memories","authors":"S. Guertin, Mehran Amrbar","doi":"10.1109/NSREC.2016.7891742","DOIUrl":"https://doi.org/10.1109/NSREC.2016.7891742","url":null,"abstract":"SEE test results are presented for SDRAM, DDR2, and DDR3. No tested devices exhibited SEL. SBUs were observed, but no MBUs were observed in data words. SEFI data were taken at low and high speed.","PeriodicalId":135325,"journal":{"name":"2016 IEEE Radiation Effects Data Workshop (REDW)","volume":"22 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-07-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121747259","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 8
Collation of the Electronic Components Intended to Spacecraft Eqiupment Critical to SEE 对SEE至关重要的航天器设备电子元件的整理
2016 IEEE Radiation Effects Data Workshop (REDW) Pub Date : 2016-07-11 DOI: 10.1109/NSREC.2016.7891704
V. Anashin, A. Koziukov, P. Chubunov, K. Z. Faradian, S. Yakovlev, Aleksey V. Perebeynos, A. Vlasov, Alexey Borisov, Alexey A. Kryukov
{"title":"Collation of the Electronic Components Intended to Spacecraft Eqiupment Critical to SEE","authors":"V. Anashin, A. Koziukov, P. Chubunov, K. Z. Faradian, S. Yakovlev, Aleksey V. Perebeynos, A. Vlasov, Alexey Borisov, Alexey A. Kryukov","doi":"10.1109/NSREC.2016.7891704","DOIUrl":"https://doi.org/10.1109/NSREC.2016.7891704","url":null,"abstract":"The paper presents SEE test results of COTS components considering to be applying in satellite equipment and critical to SEL and/or catastrophic failure. They were provided to confirm electronic components required hardness level and to define of the survivability in latched condition if SEL were observed during the experiment. In several cases LET thresholds were determined as it was specified in the requirements.","PeriodicalId":135325,"journal":{"name":"2016 IEEE Radiation Effects Data Workshop (REDW)","volume":"61 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-07-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134330180","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Total Ionizing Dose Response of SDRAM, DDR2 and DDR3 Memories SDRAM、DDR2和DDR3存储器的总电离剂量响应
2016 IEEE Radiation Effects Data Workshop (REDW) Pub Date : 2016-07-11 DOI: 10.1109/NSREC.2016.7891750
Mehran Amrbar, S. Guertin
{"title":"Total Ionizing Dose Response of SDRAM, DDR2 and DDR3 Memories","authors":"Mehran Amrbar, S. Guertin","doi":"10.1109/NSREC.2016.7891750","DOIUrl":"https://doi.org/10.1109/NSREC.2016.7891750","url":null,"abstract":"Total Ionizing Dose response of SDRAM, DDR2 and DDR3 memories is reported in static bias, and auto refresh modes. Data analysis reveals some types of memory have significant increases in stuck bits during TID exposure when refreshed.","PeriodicalId":135325,"journal":{"name":"2016 IEEE Radiation Effects Data Workshop (REDW)","volume":"31 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-07-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115772024","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
Heavy Ion, Proton and Electron Single-Event Effect Measurements of a Commercial Samsung NAND Flash Memory 商用三星NAND闪存的重离子、质子和电子单事件效应测量
2016 IEEE Radiation Effects Data Workshop (REDW) Pub Date : 2016-07-11 DOI: 10.1109/NSREC.2016.7891718
F. Irom, G. Allen, D. Sheldon
{"title":"Heavy Ion, Proton and Electron Single-Event Effect Measurements of a Commercial Samsung NAND Flash Memory","authors":"F. Irom, G. Allen, D. Sheldon","doi":"10.1109/NSREC.2016.7891718","DOIUrl":"https://doi.org/10.1109/NSREC.2016.7891718","url":null,"abstract":"Heavy ion, proton and electron single-event effect measurements of 8Gb Samsung single level NAND flash memory are reported. An increase in the heavy ion single bit upset (SBU) cross section was observed on devices that were irradiated with 60Co previously. The proton susceptibility is less than expected. No electron induced upsets were observed.","PeriodicalId":135325,"journal":{"name":"2016 IEEE Radiation Effects Data Workshop (REDW)","volume":"9 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-07-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115500679","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 8
An Analysis of High-Current Events Observed on Xilinx 7-Series and Ultrascale Field-Programmable Gate Arrays Xilinx 7系列和超大规模现场可编程门阵列的大电流事件观测分析
2016 IEEE Radiation Effects Data Workshop (REDW) Pub Date : 2016-07-11 DOI: 10.1109/NSREC.2016.7891703
David Lee, G. Swift, M. Wirthlin
{"title":"An Analysis of High-Current Events Observed on Xilinx 7-Series and Ultrascale Field-Programmable Gate Arrays","authors":"David Lee, G. Swift, M. Wirthlin","doi":"10.1109/NSREC.2016.7891703","DOIUrl":"https://doi.org/10.1109/NSREC.2016.7891703","url":null,"abstract":"This study examined high-current events observed in Xilinx Field-Programmable Gate Arrays irradiated with heavy ions. A probable cause and proposed changes to the test methodology to prevent these high-current events is described.","PeriodicalId":135325,"journal":{"name":"2016 IEEE Radiation Effects Data Workshop (REDW)","volume":"22 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-07-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126017441","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 6
下一页 尾页
0
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整，为了账户安全，请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
现在去查看 取消
×
提示
确定
请完成安全验证×
相关产品
×
本文献相关产品
联系我们：info@booksci.cn Book学术提供免费学术资源搜索服务，方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号：481959085
Book学术官方微信