Heavy Ion, Proton and Electron Single-Event Effect Measurements of a Commercial Samsung NAND Flash Memory

Abstract

Heavy ion, proton and electron single-event effect measurements of 8Gb Samsung single level NAND flash memory are reported. An increase in the heavy ion single bit upset (SBU) cross section was observed on devices that were irradiated with 60Co previously. The proton susceptibility is less than expected. No electron induced upsets were observed.