{"title":"Total Ionizing Dose Response of SDRAM, DDR2 and DDR3 Memories","authors":"Mehran Amrbar, S. Guertin","doi":"10.1109/NSREC.2016.7891750","DOIUrl":null,"url":null,"abstract":"Total Ionizing Dose response of SDRAM, DDR2 and DDR3 memories is reported in static bias, and auto refresh modes. Data analysis reveals some types of memory have significant increases in stuck bits during TID exposure when refreshed.","PeriodicalId":135325,"journal":{"name":"2016 IEEE Radiation Effects Data Workshop (REDW)","volume":"31 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2016-07-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"4","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2016 IEEE Radiation Effects Data Workshop (REDW)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/NSREC.2016.7891750","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 4
Abstract
Total Ionizing Dose response of SDRAM, DDR2 and DDR3 memories is reported in static bias, and auto refresh modes. Data analysis reveals some types of memory have significant increases in stuck bits during TID exposure when refreshed.